CN120530363A - 感放射线性树脂组合物及图案形成方法 - Google Patents

感放射线性树脂组合物及图案形成方法

Info

Publication number
CN120530363A
CN120530363A CN202380091429.3A CN202380091429A CN120530363A CN 120530363 A CN120530363 A CN 120530363A CN 202380091429 A CN202380091429 A CN 202380091429A CN 120530363 A CN120530363 A CN 120530363A
Authority
CN
China
Prior art keywords
group
radiation
resin composition
carbon atoms
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380091429.3A
Other languages
English (en)
Chinese (zh)
Inventor
八谷明日香
锦织克聪
白谷宗大
渊胁纯太
宫崎文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of CN120530363A publication Critical patent/CN120530363A/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D307/00Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/02Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
    • C07D307/34Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
    • C07D307/56Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D307/58One oxygen atom, e.g. butenolide
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D317/00Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/44Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D317/70Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
CN202380091429.3A 2023-04-04 2023-12-27 感放射线性树脂组合物及图案形成方法 Pending CN120530363A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-060723 2023-04-04
JP2023060723 2023-04-04
PCT/JP2023/046872 WO2024209754A1 (ja) 2023-04-04 2023-12-27 感放射線性樹脂組成物及びパターン形成方法

Publications (1)

Publication Number Publication Date
CN120530363A true CN120530363A (zh) 2025-08-22

Family

ID=92971649

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380091429.3A Pending CN120530363A (zh) 2023-04-04 2023-12-27 感放射线性树脂组合物及图案形成方法

Country Status (5)

Country Link
JP (1) JPWO2024209754A1 (https=)
KR (1) KR20250171280A (https=)
CN (1) CN120530363A (https=)
TW (1) TW202449511A (https=)
WO (1) WO2024209754A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025164208A1 (ja) * 2024-01-30 2025-08-07 Jsr株式会社 感放射線性組成物、レジストパターン形成方法及び化合物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5856991B2 (ja) 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
KR102611586B1 (ko) * 2018-09-14 2023-12-07 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법
CN116783551A (zh) * 2021-01-22 2023-09-19 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法、化合物及树脂
WO2023008354A1 (ja) * 2021-07-30 2023-02-02 三菱瓦斯化学株式会社 レジスト組成物、及びそれを用いたレジスト膜形成方法
TW202346262A (zh) * 2022-05-23 2023-12-01 日商Jsr 股份有限公司 感放射線性樹脂組成物及圖案形成方法

Also Published As

Publication number Publication date
WO2024209754A1 (ja) 2024-10-10
JPWO2024209754A1 (https=) 2024-10-10
TW202449511A (zh) 2024-12-16
KR20250171280A (ko) 2025-12-08

Similar Documents

Publication Publication Date Title
JPWO2018123388A1 (ja) 感放射線性組成物、パターン形成方法並びに金属含有樹脂及びその製造方法
JP7544200B2 (ja) 感放射線性樹脂組成物及びレジストパターンの形成方法
KR101910829B1 (ko) 포토리소그래피용 오버코트 조성물 및 방법
KR20250067822A (ko) 감방사선성 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생체 및 중합체
KR20250003494A (ko) 감방사선성 수지 조성물 및 패턴 형성 방법
TW202112845A (zh) 感放射線性樹脂組成物、抗蝕劑圖案形成方法及感放射線性酸產生劑
CN120530363A (zh) 感放射线性树脂组合物及图案形成方法
TWI911279B (zh) 感放射線性樹脂組成物及圖案形成方法
JP2025111680A (ja) 感放射線性樹脂組成物及びパターン形成方法
TW202421678A (zh) 感放射線性樹脂組成物及圖案形成方法
JP7755813B2 (ja) 感放射線性樹脂組成物及びパターン形成方法
WO2024142556A1 (ja) 感放射線性樹脂組成物及びパターン形成方法
JP7751258B2 (ja) 感放射線性樹脂組成物及びパターン形成方法
TW202134783A (zh) 感放射線性樹脂組成物及抗蝕劑圖案形成方法
KR102832627B1 (ko) 레지스트 패턴의 형성 방법 및 감방사선성 수지 조성물
TWI840562B (zh) 感放射線性樹脂組成物及抗蝕劑圖案形成方法
TW202421607A (zh) 感放射線性樹脂組成物及圖案形成方法
TW202546044A (zh) 感放射線性組成物及抗蝕劑圖案形成方法
US20240385518A1 (en) Radiation-sensitive resin composition, resin, compound, and pattern formation method
WO2024176672A1 (ja) 感放射線性組成物及びパターン形成方法
WO2024185308A1 (ja) 感放射線性組成物及びパターン形成方法
WO2026079103A1 (ja) 感放射線性組成物、レジストパターン形成方法及び化合物
WO2025032972A1 (ja) 感放射線性組成物、レジストパターン形成方法及び重合体
WO2025142242A1 (ja) 感放射線性組成物、レジストパターン形成方法、重合体及び化合物
TW202528386A (zh) 感放射線性組成物及圖案形成方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination