CN1200148C - 一种用于直拉法生长单晶硅的硅籽晶夹持器 - Google Patents
一种用于直拉法生长单晶硅的硅籽晶夹持器 Download PDFInfo
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- CN1200148C CN1200148C CN 02131185 CN02131185A CN1200148C CN 1200148 C CN1200148 C CN 1200148C CN 02131185 CN02131185 CN 02131185 CN 02131185 A CN02131185 A CN 02131185A CN 1200148 C CN1200148 C CN 1200148C
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- hole
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- silicon
- silicon seed
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 155
- 239000010703 silicon Substances 0.000 title claims abstract description 155
- 239000013078 crystal Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131185 CN1200148C (zh) | 2002-10-15 | 2002-10-15 | 一种用于直拉法生长单晶硅的硅籽晶夹持器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131185 CN1200148C (zh) | 2002-10-15 | 2002-10-15 | 一种用于直拉法生长单晶硅的硅籽晶夹持器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1490436A CN1490436A (zh) | 2004-04-21 |
| CN1200148C true CN1200148C (zh) | 2005-05-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02131185 Expired - Lifetime CN1200148C (zh) | 2002-10-15 | 2002-10-15 | 一种用于直拉法生长单晶硅的硅籽晶夹持器 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1200148C (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101781792A (zh) * | 2009-12-23 | 2010-07-21 | 常州亿晶光电科技有限公司 | 硅棒拉制用子晶夹头部件 |
| CN102051681A (zh) * | 2010-12-31 | 2011-05-11 | 镇江荣德新能源科技有限公司 | 一种用于制备单晶硅的籽晶 |
| CN102492983A (zh) * | 2011-12-22 | 2012-06-13 | 浙江金瑞泓科技股份有限公司 | 用于直拉硅单晶生长的晶种夹头 |
| CN103361716A (zh) * | 2012-04-06 | 2013-10-23 | 有研半导体材料股份有限公司 | 一种籽晶夹持器 |
| CN102628179B (zh) * | 2012-05-04 | 2015-12-16 | 杭州海纳半导体有限公司 | 用于直拉法制备单晶硅的籽晶夹持器及使用方法 |
| CN102660767B (zh) * | 2012-05-28 | 2015-06-10 | 哈尔滨工业大学 | 用于电磁冷坩埚定向凝固设备中的冷却过渡接头 |
| CN110230093B (zh) * | 2019-07-10 | 2020-12-15 | 深圳市全普科技有限公司 | 一种用于单晶硅生长炉的籽晶夹持提拉装置 |
| CN111766151A (zh) * | 2020-08-06 | 2020-10-13 | 宁夏协鑫晶体科技发展有限公司 | 一种单晶硅棒抗拉强度的检测装置及其方法 |
| CN113463182B (zh) * | 2021-07-07 | 2022-08-23 | 西安奕斯伟硅片技术有限公司 | 一种单晶硅棒的拉制方法 |
-
2002
- 2002-10-15 CN CN 02131185 patent/CN1200148C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1490436A (zh) | 2004-04-21 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER NAME: GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS |
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| CP03 | Change of name, title or address |
Address after: 100088 No. 43 middle third ring road, Haidian District, Beijing Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Patentee before: General Research Institute for Nonferrous Metals |
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| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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| CP03 | Change of name, title or address |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Address before: 100088 No. 43 middle third ring road, Haidian District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150729 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150729 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. |
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| CI01 | Publication of corrected invention patent application |
Correction item: Patentee|Address Correct: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road False: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Number: 33 Volume: 31 |
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| ERR | Gazette correction | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050504 |