CN1198319C - Device and method for regulating pressure at expulsion in vacuum system of semiconductor reaction chamber - Google Patents
Device and method for regulating pressure at expulsion in vacuum system of semiconductor reaction chamber Download PDFInfo
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- CN1198319C CN1198319C CN 01137499 CN01137499A CN1198319C CN 1198319 C CN1198319 C CN 1198319C CN 01137499 CN01137499 CN 01137499 CN 01137499 A CN01137499 A CN 01137499A CN 1198319 C CN1198319 C CN 1198319C
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Abstract
The present invention relates to a device and a method for adjusting exhaust pressure in a vacuum system of a semiconductor reaction chamber. The method at least comprises the following steps: generating first pressure in the semiconductor reaction chamber by using the vacuum system; detecting the first pressure and generating a first signal; obtaining a set value of the exhaust pressure according to the first signal and adjusting the exhaust pressure to the set value by using a controller. The extra exhaust controller controls the flow capacity of the gas added in the vacuum system to maintain the balance between the pressure of the reaction chamber and the exhaust pressure; when the pressure of the reaction chamber rises, the flow capacity of the added gas led into the vacuum system is increased; contrarily, when the pressure of the reaction chamber drops, the flow capacity of the added gas led into the vacuum system is decreased. The dynamic control for the flow capacity of the gas added in the vacuum system is favorable for the fast response to the pressure change of the reaction chamber. Meanwhile, the device can replace a throttle valve to adjust the pressure of the reaction chamber so as to reduce the movement of the throttle valve and greatly reduce the possibility of particulate pollution to the reaction chamber.
Description
Technical field
The relevant a kind of device and method of adjusting the exhaust pressure of vacuum system of semiconductor reaction chamber of the present invention, particularly a kind of gas flow that utilizes exhaust controller to control to import this vacuum system is with the device and method of the exhaust pressure of adjusting vacuum system of semiconductor reaction chamber.
Background technology
Various manufacture of semiconductor is to be in the manufacturing of carrying out wafer under the environment of controlling of bleeding, as chemical vapor deposition process or plasma etching processing procedure.These processing procedures normally carry out in reative cell, make that wafer is to carry out processing procedure under the condition of vacuum and reative cell connects a vacuum system.When processing procedure begins, the process gas that is used for processing procedure will fully mix according to the set flow of process conditions, and feed in the reative cell.General processing procedure, its chamber pressure must remain below under the pressure condition of 1 holder (1 torr), and therefore, vacuum system must constantly be got rid of gas in reative cell, to keep the required pressure of processing procedure.
Comprise many spare parts (for example pump, wash mill and various valve member) in the common semi-conductive vacuum system.When these spare parts use separately, just do not have too big problem as long as meet its service condition.But after these elements combination are got up, but often ignore each spare part between pressure set points must do optimized adjustment.Therefore, for vacuum system, do each spare part between optimized adjustment can improve the overall utility of system.General vacuum system comprises a turbine pump (turbo pump), between itself and the reative cell choke valve (throttle valve) is arranged.And a pressure controller is controlled the increase and decrease of turbine pump to the reative cell vacuum suction in order to control opening and closing of choke valve, keeps reative cell in the pressure that sets to reach.Yet, by such method, only can be controlled to the pressure of reative cell, uncontrollable exhaust pressure in vacuum system line.Like this, may cause gas backstreaming, and, pollute reaction chamber wall or pollute wafer the past reative cell that is transmitted back to of contaminate particulate.
With the plasma etching processing procedure is example, and the reaction accessory substance such as particulate and the impurity that are produced normally are sent to (or say be discharged into) wash mill by vacuum system, are discharged in the atmosphere more after treatment.Yet in the tube wall of vacuum system, or table (surface, inside of pump and valve member) has adhering to of some accessory substances usually in the element.In case disequilibrium between chamber pressure and the exhaust pressure can cause the flow-disturbing phenomenon most probably, and the contaminate particulate adverse current is transmitted back to reative cell, pollute wafer and make product produce defective.In addition, because pollutant and particulate can be deposited on the choke valve surface, make that choke valve also is simultaneously one of chamber contamination source.When chamber pressure changes to some extent, because of the movable contaminate particulate that produces of choke valve just may be back to reative cell.Therefore, keeping stable exhaust fast, is very important in relating to the processing procedure of vacuum condition.
Therefore as can be known, provide a kind of stabilizing effective exhaust, reducing the frequency of choke valve activity, and reach the reliability of improving product and the device and method that promotes the product fine rate is very important by above-mentioned prior art.
Summary of the invention
In above-mentioned background of invention, many shortcomings that device and method produced of the exhaust pressure of traditional vacuum system of semiconductor reaction chamber, purpose of the present invention is for providing a kind of device and method of adjusting the exhaust pressure of vacuum system of semiconductor reaction chamber, import the gas flow of this vacuum system with dynamic control, help to respond fast the change of chamber pressure, realize balance between optimization chamber pressure and exhaust pressure, simultaneously can replace the action of choke valve that chamber pressure is done adjusting, reduce the activity of choke valve motion frequency thereby minimizing choke valve, reduce the possibility of particle contamination reative cell greatly, avoid causing the defective of product because of the adverse current of pollutant.
For achieving the above object, the device of the exhaust pressure of adjustment semiconductor reaction chamber of the present invention, be characterized in comprising: one first vacuum pump, have one first exhaust end and one first suction end, described first suction end communicates with described semiconductor reaction chamber by a choke valve, and in described semiconductor reaction chamber, produce one first pressure, and extremely produce one first exhaust pressure between described first suction end at described choke valve; One first pressure sensor is in order to detect described first pressure and to produce one first signal; One second pressure sensor in order to detecting described first exhaust pressure, and produces a secondary signal; A kind of gas by one first air inlet that is positioned between described choke valve and described first suction end, is imported between described choke valve and described first suction end in one additional gas source; And a controller, according to the amount that described first signal and described secondary signal are regulated the described gas of extra input, make that described first pressure in the described semiconductor reaction chamber is higher than described first exhaust pressure.
The present invention provides a kind of method of regulating the semiconductor reaction chamber exhaust pressure simultaneously, described method comprises the following step at least: utilize vacuum system to produce first pressure in semiconductor reaction chamber, and produce an exhaust pressure between semiconductor reaction chamber and vacuum system; Detect first pressure and produce first signal; Foundation first signal obtains the set point of exhaust pressure, and wherein first pressure is higher than the set point of exhaust pressure; Utilize controller to regulate through its set point of exhaust pressure, the set point of exhaust pressure can be stored in the exhaust controller according to chamber pressure in advance, be the setting numerical value that each chamber pressure has a corresponding exhaust pressure, controller utilizes the flow control that feeds the gas of vacuum system by air inlet, regulates exhaust pressure.
Be clearer understanding purpose of the present invention, characteristics and advantage, below in conjunction with accompanying drawing to of the present invention preferable
Embodiment is elaborated.
Description of drawings
Fig. 1 is the simple diagram of the device of adjustment exhaust pressure of the present invention; And
Fig. 2 is the flow chart of the method for adjustment exhaust pressure of the present invention.
Embodiment
In preferred embodiment of the present invention, provide a kind of device of adjusting the exhaust pressure of vacuum system of semiconductor reaction chamber.With reference to shown in Figure 1, when generally carrying out vacuum process, be that wafer is positioned on the support component of reative cell 100, and make reative cell 100 remain on vacuum state.Then, utilize gas supply system 110,, process gas is fed in the reative cell 100 according to the flow of process conditions demand.This vacuum system 120 is the vacuum states in order to produce and to remain in the reative cell 100.Vacuum system 120 comprises control valve 122, the first vacuum pumps 124 at least, and first air inlet 126.The suction end 128 of first vacuum pump 124 communicates with reative cell 100 by control valve 122.Control valve 122 at this can be that any energy is regulated the gas of reative cell 100 and vacuum system 120 of flowing through, and reaches the valve member of conditioned reaction chamber 100 pressure, for example choke valve (throttle valve).First air inlet 126 is positioned at the downstream of control valve 122, is positioned at the suction end 128 of first vacuum pump 124 in other words.
In addition, vacuum system 120 also can further comprise more than one vacuum pump and air inlet, second vacuum pump 132 as shown in Figure 1 and second air inlet 134.And the exhaust end 130 of first vacuum pump 124 communicates with the suction end 136 of second vacuum pump 132.First vacuum pump 124 can be the high-vacuum pump of turbine pump (turbo pump) for example, and second vacuum pump 132 generally then is a rotary pump (rotary pump).Usually utilize second vacuum pump 132 that the pressure of reative cell 100 is extracted into lower vacuum by atmospheric pressure earlier, then when reaching the lower-pressure limit of second vacuum pump 132, first vacuum pump 124 just continue again to bleed pressure is dropped to lower.And second air inlet 134 is positioned at the downstream (or exhaust end 128) of first vacuum pump 124, is positioned at the suction end 136 of second vacuum pump 132 in other words.
An emphasis of the present invention is to keep the exhaust of forward flowing smoothly in gas extraction system.That is to say that the pressure in the gas extraction system has the order of successively decreasing at different exhaust phases.Therefore, the accessory substance of processing procedure generation can successfully be discharged the autoreaction chamber by vacuum system.Also be the balance that reaches between chamber pressure and exhaust pressure, first exhaust pressure (P2) at first exhaust phase of first vacuum pump is lower than chamber pressure (P1), and second exhaust pressure (P3) at second exhaust phase of second vacuum pump is lower than first exhaust pressure (P2), and just chamber pressure is greater than first exhaust pressure with greater than second exhaust pressure (P1＞P2＞P3).
In the application of some prior art, can utilize by the air inlet between vacuum system line and feed extra gas (or title voltage stabilizing gas (ballast gas) or Purge gas (purge gas), nitrogen for example) in vacuum system, help to respond fast the change of chamber pressure, expectation simultaneously can replace the action of choke valve that chamber pressure is regulated.Utilize the method for the pressure of the extra gas control reative cell that feeds, though help reducing the position change of control valve, but because this gas that adds normally leads in the vacuum system with fixing flow, so the scope when the pressure of reative cell can be controlled above the gas of firm discharge will cause the pollution of reative cell.Therefore, when the process gas that flows into reative cell increased, when also being the pressure rising of reative cell, the gas of the firm discharge of feeding was significantly not enough; Obviously this moment flow setting cross low pressure that can't the summary responses reative cell and raise, and can't keep exhaust smoothly.So, may cause exhaust too fast, the material such as the macromolecule that cause being covered in the inner surface of reative cell are destroyed and are polluted, because of product defects makes acceptance rate reduce.Otherwise, when the process gas that flows into reative cell reduces, when also being the pressure reduction of reative cell, the gas of the firm discharge that feeds is obviously too much, obviously this moment flow the too high pressure that can't the summary responses reative cell of setting reduce, may cause the flow-disturbing phenomenon, and the pollutant adverse current in the vacuum system is got back to reative cell.
Therefore, use the shortcoming that adds gas of firm discharge for solving above-mentioned prior art, another emphasis of the present invention is, utilize extra exhaust controller 140 to control the gas flow that adds this vacuum system 120, with the exhaust pressure of adjustment vacuum system 120, and reach the balance of keeping between chamber pressure and exhaust pressure.The use of exhaust controller 140 can be according to chamber pressure, and dynamically control adds the gas flow of vacuum system by air inlet, and avoids the disappearance of deriving because of the gas that adds firm discharge.
Refer again to Fig. 1, first pressure sensor 150 is to be used for detection reaction chamber pressure (P1), and produces one first signal.And exhaust controller 140 is according to first Signal Regulation, first exhaust pressure (P2), detect first exhaust pressure up to second pressure sensor 160 and reach a corresponding numerical value, wherein this corresponding numerical value is that the emphasis that meets smoothly forward exhaust (is P1＞P2).And the corresponding numerical value that first exhaust pressure is reached can be stored in the exhaust controller 140 in advance according to chamber pressure.Also be the setting numerical value that each chamber pressure has corresponding first exhaust pressure.The present invention is means with control by the gas flow that first air inlet 126 adds vacuum system 120 also, reaches the purpose of regulating first exhaust pressure.In other words, when the process gas flow that feeds reative cell 100 increased, exhaust controller 140 can dynamically increase the gas flow 170 that feeds vacuum system 120, to reach the balance between chamber pressure and exhaust pressure according to first signal.Otherwise when the process gas flow that feeds reative cell 100 reduced, exhaust controller 140 can reduce the gas flow 170 that feeds vacuum system 120 according to first signal dynamics ground, to reach the balance between chamber pressure and exhaust pressure.
In addition, when vacuum system is used more than one pump, when using the pump of two series connection as shown in Figure 1.Second pressure sensor 160 also can produce a secondary signal simultaneously in detecting first exhaust pressure.Exhaust controller 140 also can be regulated second exhaust pressure (P3) according to first signal and secondary signal, detect second exhaust pressure up to the 3rd pressure sensor 180 and reach a corresponding numerical value, wherein this corresponding numerical value is that the order that meets smoothly forward exhaust (is P1＞P2＞P3).The present invention is means with control by the gas flow 190 that second air inlet 134 adds vacuum system 120 also, reaches the purpose of regulating second exhaust pressure.Apparatus of the present invention also can comprise in order to handle the processing unit 200 of the material of being discharged by vacuum system 120, for example washer (scrubber).
Because controlled the gas flow that adds vacuum system dynamically, the motion frequency of choke valve (control valve) just can reduce.Thereby reduce because of choke valve activity produced pollution particulate.In this mandatory declaration is by the gas that first air inlet and second air inlet feed, can distinguish and directly feed first vacuum pump and second vacuum pump, or near the place of its upstream, thereby (P2 P3), reduces the activity of choke valve can effectively to regulate exhaust pressure.So, the opportunities for contamination of very effective minimizing particulate.
The present invention also provides a kind of method of regulating exhaust pressure in the vacuum system simultaneously in another embodiment.Fig. 2 is the flow chart of the method for adjustment exhaust pressure.As shown in Figure 2, the inventive method comprises step 210 at least, and 220,230 and 240.At first such as step 210 description, utilize vacuum system in semiconductor reaction chamber, to produce first pressure, and between semiconductor reaction chamber and vacuum system, produce an exhaust pressure.Step 220 is described for another example, detects this first pressure or claims chamber pressure, and produce first signal.In step 230, can obtain the set point of one second pressure according to first signal, and the set point of second pressure is less than first pressure.Step 240 item is adjusted to the exhaust pressure of vacuum system the set point of second pressure for exhaust controller is means with the flow that control feeds the voltage stabilizing gas (ballast gas) of vacuum system.And the set point of second pressure can be stored in the exhaust controller in advance according to chamber pressure.Also be the setting numerical value that each chamber pressure has corresponding second pressure.Wherein exhaust controller is an exhaust pressure of controlling vacuum system with the Push And Release of may command valve member that control feeds the blow vent of vacuum system voltage stabilizing gas.Because dynamically controlled the gas flow that adds vacuum system, the motion frequency of control valve just can reduce, thereby reduces because of choke valve activity produced pollution particulate.
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from that the equivalence finished under the disclosed spirit changes or equivalence is replaced, all should be included in that following claims limits claim in.
Claims (8)
1. device of adjusting the exhaust pressure of semiconductor reaction chamber is characterized in that comprising:
One first vacuum pump, have one first exhaust end and one first suction end, described first suction end communicates with described semiconductor reaction chamber by a choke valve, and in described semiconductor reaction chamber, produce one first pressure, and extremely produce one first exhaust pressure between described first suction end at described choke valve;
One first pressure sensor is in order to detect described first pressure and to produce one first signal;
One second pressure sensor in order to detecting described first exhaust pressure, and produces a secondary signal;
A kind of gas by one first air inlet that is positioned between described choke valve and described first suction end, is imported between described choke valve and described first suction end in one additional gas source; And
One controller according to the amount that described first signal and described secondary signal are regulated the described gas of extra input, makes that described first pressure in the described semiconductor reaction chamber is higher than described first exhaust pressure.
2. the device of adjustment exhaust pressure as claimed in claim 1, it is characterized in that, also has a set point with corresponding described first exhaust pressure of described first pressure, described set point is stored in described controller in advance, and described controller is regulated described first exhaust pressure up to reaching described set point.
3. the device of adjustment exhaust pressure as claimed in claim 1, it is characterized in that, also comprise one second vacuum pump, it has one second suction end and one second exhaust end, and described second suction end of described second vacuum pump communicates with described first exhaust end of described first vacuum pump.
4. the device of adjustment exhaust pressure as claimed in claim 3 is characterized in that, also comprises one the 3rd pressure sensor, in order to second exhaust pressure of described second suction end that detects described second vacuum pump, and produces one the 3rd signal.
5. the device of adjustment exhaust pressure as claimed in claim 4, it is characterized in that, described second exhaust pressure that described controller is regulated described second suction end of described second vacuum pump according to described secondary signal and described the 3rd signal makes described first exhaust pressure be higher than described second exhaust pressure.
6.. the device of adjustment exhaust pressure as claimed in claim 3 is characterized in that, also comprises one second air inlet, is positioned at described second suction end of described second vacuum pump.
7. the device of adjustment exhaust pressure as claimed in claim 6 is characterized in that, described controller control is by the flow of the gas of described second air inlet feeding, to regulate exhaust pressure.
8. a method of regulating the semiconductor reaction chamber exhaust pressure is characterized in that, described method comprises the following step at least: utilize vacuum system to produce first pressure in semiconductor reaction chamber, and produce an exhaust pressure between semiconductor reaction chamber and vacuum system; Detect first pressure and produce first signal; Foundation first signal obtains the set point of exhaust pressure, and wherein first pressure is higher than the set point of exhaust pressure; Utilize controller to regulate through its set point of exhaust pressure, the set point of exhaust pressure can be stored in the exhaust controller in advance according to chamber pressure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01137499 CN1198319C (en) | 2001-11-19 | 2001-11-19 | Device and method for regulating pressure at expulsion in vacuum system of semiconductor reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 01137499 CN1198319C (en) | 2001-11-19 | 2001-11-19 | Device and method for regulating pressure at expulsion in vacuum system of semiconductor reaction chamber |
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| CN1420526A CN1420526A (en) | 2003-05-28 |
| CN1198319C true CN1198319C (en) | 2005-04-20 |
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| CN 01137499 Expired - Fee Related CN1198319C (en) | 2001-11-19 | 2001-11-19 | Device and method for regulating pressure at expulsion in vacuum system of semiconductor reaction chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339897B (en) * | 2007-06-29 | 2012-04-18 | 东京毅力科创株式会社 | Vacuum treatment device, vacuum treatment method and storage medium |
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| CN101397986B (en) * | 2008-11-25 | 2010-10-13 | 温晋轩 | Multifunctional pumping vacuum device |
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| CN110543194B (en) * | 2019-06-11 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Pressure control device and semiconductor device |
| CN112530777B (en) * | 2019-09-18 | 2024-09-10 | 夏泰鑫半导体(青岛)有限公司 | Air extracting device and air extracting method thereof |
| CN112527025B (en) * | 2019-09-19 | 2023-03-17 | 夏泰鑫半导体(青岛)有限公司 | Air pressure control device and air pressure adjusting method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339897B (en) * | 2007-06-29 | 2012-04-18 | 东京毅力科创株式会社 | Vacuum treatment device, vacuum treatment method and storage medium |
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| CN1420526A (en) | 2003-05-28 |
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