CN119605326A - 半导体装置以及电力变换装置 - Google Patents

半导体装置以及电力变换装置 Download PDF

Info

Publication number
CN119605326A
CN119605326A CN202280097717.5A CN202280097717A CN119605326A CN 119605326 A CN119605326 A CN 119605326A CN 202280097717 A CN202280097717 A CN 202280097717A CN 119605326 A CN119605326 A CN 119605326A
Authority
CN
China
Prior art keywords
region
semiconductor device
partition
drift layer
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280097717.5A
Other languages
English (en)
Chinese (zh)
Inventor
饭岛彬文
永久雄一
川原洸太朗
日野史郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN119605326A publication Critical patent/CN119605326A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202280097717.5A 2022-07-13 2022-07-13 半导体装置以及电力变换装置 Pending CN119605326A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/027513 WO2024013868A1 (ja) 2022-07-13 2022-07-13 半導体装置、および、電力変換装置

Publications (1)

Publication Number Publication Date
CN119605326A true CN119605326A (zh) 2025-03-11

Family

ID=89536134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280097717.5A Pending CN119605326A (zh) 2022-07-13 2022-07-13 半导体装置以及电力变换装置

Country Status (4)

Country Link
JP (1) JP7686153B2 (https=)
CN (1) CN119605326A (https=)
DE (1) DE112022007529T5 (https=)
WO (1) WO2024013868A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4700125B2 (ja) 2009-07-30 2011-06-15 住友電気工業株式会社 半導体装置およびその製造方法
JP5852555B2 (ja) * 2012-12-26 2016-02-03 株式会社豊田中央研究所 半導体装置
WO2018155553A1 (ja) 2017-02-24 2018-08-30 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP7214508B2 (ja) * 2019-03-01 2023-01-30 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPWO2024013868A1 (https=) 2024-01-18
JP7686153B2 (ja) 2025-05-30
DE112022007529T5 (de) 2025-08-28
WO2024013868A1 (ja) 2024-01-18

Similar Documents

Publication Publication Date Title
US11646369B2 (en) Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
JP7170781B2 (ja) 炭化珪素半導体装置および電力変換装置
US11842895B2 (en) Semiconductor device and power conversion device
JP6611960B2 (ja) 炭化珪素半導体装置および電力変換装置
JP2019195081A (ja) 半導体装置および電力変換装置
US11355629B2 (en) Semiconductor device and power converter
US20070252178A1 (en) Semiconductor device
US20230139229A1 (en) Semiconductor device and power converter
CN113330579B (zh) 半导体装置以及电力变换装置
US11894428B2 (en) Silicon carbide semiconductor device and power converter
US11508840B2 (en) Silicon carbide semiconductor device and power converter
JP6976489B2 (ja) 炭化珪素半導体装置および電力変換装置
JP7330396B2 (ja) 半導体装置及び電力変換装置
US20260006893A1 (en) Semiconductor device and power conversion device
CN118825069A (zh) 半导体装置、电力转换装置以及半导体装置的制造方法
CN119605326A (zh) 半导体装置以及电力变换装置
CN116368623B (zh) 半导体装置以及电力变换装置
JP7584657B2 (ja) 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置
JP7573747B2 (ja) 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置
CN116137935B (zh) 碳化硅半导体装置以及电力变换装置
JP2022176737A (ja) 炭化珪素半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination