CN1194821C - Nozzle for large-area uniform transparent conducting film - Google Patents
Nozzle for large-area uniform transparent conducting film Download PDFInfo
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- CN1194821C CN1194821C CNB021507856A CN02150785A CN1194821C CN 1194821 C CN1194821 C CN 1194821C CN B021507856 A CNB021507856 A CN B021507856A CN 02150785 A CN02150785 A CN 02150785A CN 1194821 C CN1194821 C CN 1194821C
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Abstract
The present invention relates to a nozzle for spraying, coating and depositing large-area uniform transparent conducting films, which belongs to the field of filming of semiconductor electronic material. The nozzle is a one-dimensional structure nozzle with small round holes distributed by a certain rule or is a two-dimensional nozzle of a two-dimensional structure with arrays arranged by the certain rule or is a two-dimensional nozzle with a one-dimensional single slit nozzle and a plurality of groups of long slit nozzles arranged in parallel. Spray holes of the nozzle have two structures: spray holes of small round holes, and slit spray holes, wherein the spray holes of small round holes on the one-dimensional nozzle are uniformly distributed and arranged in a single line; the small round holes of the two-dimensional structure nozzle are distributed within the two-dimensional range of 50*50mm#+<2> to 150*150mm#+<2>; the one-dimensional single slit nozzle and the groups of long slit nozzles are arranged in parallel and are distributed within the two-dimensional range of 50*50mm#+<2> to 150*150mm#+<2>. The square resistance of a large-area transparent conducting film obtained by the nozzle of the present invention can achieve 4 omega; the transmissivity achieves 90% (incoming rays with the wavelength of 600 nm); the film thickness of the film center and the edge, and the unevenness of electrical performance are smaller than 5%. The present invention is suitable for industrial mass production.
Description
Technical field
What the present invention relates to is a kind of nozzle that sprays homogeneous transparent conductive film device, and particularly a kind of nozzle of spray deposited large tracts of land homogeneous transparent conductive film belongs to semiconductor electronic material film plating field.
Background technology
Existing depositing large-area (10 * 10cm
2More than) process of homogeneous transparent conductive film has: radio-frequency sputtering and normal pressure Compressed Gas spraying (APCVD).Radio-frequency sputtering needs high vacuum system, and equipment is complicated and expensive, and the low-cost transparent conductive film is produced in inconvenience, and the square resistance minimum that radio-frequency sputtering explained hereafter in addition goes out transparent conductive film only is 70～90 Ω/; The Compressed Gas spraying can realize target cheaply, but the quality of film forming, uniformity and electricity etc. all can not satisfy the high requirement of thin film solar cell.Find by literature search, China Patent No. is: ZL99116819.4, name is called: transparent conductive film and reflection reduction film spray coating equipment and method thereof, this patent provides a kind of apparatus and method of spray deposited transparent conductive film, can overcome deficiency of the prior art and defective, promptly adopt ultrasonic ultrasonic delay line memory, the solution for preparing was atomized before spraying in advance, carry down in carrier gas again and spray on the substrate that heats the formation transparent conductive film.But the ZL99116819.4 patent belongs to the invention of principle substantially, does not relate to industrialization large tracts of land spray equipment, fails also to realize that large tracts of land evenly sprays the purpose of transparent conductive film.The spray pyrolysis method that generally adopts prepares SnO at present
2The technology characteristics of transparent conductive film has two, first kind is that people such as A.K.Saxena and R.Thangaraj are at Thin Solid Films 131,1985, P121, and people such as R.Pommier and C.Grill is at Thin Solid Films 77,1981, P91～97 are mentioned: by high pressure carrier gas by spray gun with the source solution atomization, and be carried into the substrate of heating, and carrying out pyrolytic reaction, Chinese invention patent ZL01121721.9 " liquid jet coating " also is to be raw material with liquid, by high pressure carrier gas by spray gun with the source solution atomization, the design of nozzle is to have double-decker, and inside is liquid storage unit, and there is the gas injection unit outside; Second kind is the manufacture method of the described tin dioxide transparent conductive film of Chinese patent ZL99105710.4: adopt water, oil bath heating tin source solution (dichloro dihexyl tin) to become steam, carried by gas mixer and the oxygen mix of sending into simultaneously by inert gas, mist is from single slit spout ejection of nozzle again.The weak point of first kind of conventional method is that the size of steam particulate is directly relevant with gas flow, so compressed gas flow can not be too low, but flow is too high, and the uniformity to the underlayer temperature that heats plays influence again, and the hole of nozzle also can reduce the effect of atomizing too greatly.Second kind of conventional method is the Xi Yuan by heat fused, produce steam, its weak point is to be difficult for forming a large amount of steam, so its nozzle hole can only be single slit, be the one dimension nozzle, can only could obtain large area film by scanning, deposition velocity is low, can not control the size of steam particulate.
Summary of the invention
The present invention is directed in the background technology nozzle in the present situation that has open defect aspect technology controlling and process and the large-scale production; a kind of nozzle of large tracts of land homogeneous transparent conductive film is provided; on the basis of ZL99116819.4 patent, design a cover and the supporting spray nozzle device of ZL99116819.4 patented technology; make it be equipped with suitable scanning system, can obtain large tracts of land homogeneous transparent conductive film.The present invention is achieved by the following technical solutions, because liquid is under ultrasonic effect, be atomized into the drop particulate, so nozzle of the present invention comprises the container 2 that is used to store atomizing steam, the bottom of this container has the aperture of certain rule distribution as spray orifice, distribution by the spray orifice of nozzle bottom is divided into one dimension nozzle and bidimensional nozzle, and the aperture regularity of distribution of bottom also has all even non-uniform Distribution difference, and spray orifice also has 3 two kinds of small sircle hole spray orifice 1 and strip slit spray orifices.The selection of these structural designs is that the final effect of and film equality big or small according to gas flow decides fully.The small sircle hole spray orifice 1 of one dimension nozzle bottom is linear array, is distributed in the one dimension scope of 50mm～150mm, and the small sircle hole spray orifice 1 of two-dimentional nozzle is distributed in 50 * 50mm
2～150 * 150mm
2In the two dimensional range, concrete size range is to determine according to the size of substrate width; It also can be the nozzle of a strip slit spray orifice 3, the length of strip slit is in 50mm～150mm scope, the bidimensional nozzle that is arranged in parallel with many long strip type slit spray orifices 3, many long strip type slit spray orifices 3 of bidimensional nozzle are distributed in 50 * 50mm2～150 * 150mm2 scope, and concrete size range also is to determine according to the size of substrate width.
The diameter of small sircle hole spray orifice 1 is 0.4～5.0mm, distance between the hole heart of two nearest small sircle hole spray orifices 1 is 1.0～6.0mm, the width of slit spray orifice 3 is 0.3～5.0mm, and the length of slit spray orifice 3 is 50～150mm, and the length of slit is to determine according to the size of substrate width.
Spray orifice is in the bottom of nozzle, substrate 5 is placed on the positive bottom of nozzle, the spray orifice of nozzle is determined by chemical vapor deposited pyrolytic reaction technology characteristics from the distance of substrate, the spray orifice of control nozzle to the distance of substrate in 5～100mm scope, four sides of nozzle are provided with baffler 6, to stop reaction vapor escape delivery nozzle zone, all these devices are to be made by anticorrosion (as quartz glass or pottery) material.
The supporting use of the present invention and scanning means, the reaction vapor input pipe of scanning means is evenly delivered to atomizing steam in container 2 spatial dimensions of one dimension or two-dimentional nozzle, nozzle both sides distribution reactor off-gas outlet 4, also can only arrange the reactor off-gas outlet to form the vapor stream that same direction flows, be beneficial to and form even vapor stream in a side of nozzle.When scanning spraying, can fixed nozzle, allow glass substrate under chain device delivery, at the uniform velocity advance; Also can the fixing glass substrate, allow nozzle under the drive of transmission device, at the uniform velocity advance, the scanning spraying.Be that nozzle can be fixed, also can move in the horizontal direction scanning spraying, the atomizing steam that participates in reaction is transported to the top nozzle from the ultrasonic atomizatio generator by a pipeline, and uniform large-area be sprayed on the substrate 5 that heats.
Since based on the difference of atomizing principles, spray nozzle device of the present invention is compared with spray equipment in the past has substantive distinguishing features and marked improvement, the large-area transparent conductive film that adopts nozzle of the present invention to obtain, its square resistance can reach 4 Ω/, transmitance reaches 90% (600nm wavelength incident light), the thickness at thin film center and edge, electrical properties unevenness are less than 5%, and the present invention is more suitable for large-scale industrialization production than above-mentioned conventional method and respective nozzles design.
Description of drawings
Bottom among Fig. 1 the present invention has the nozzle arrangements schematic diagram of small sircle hole spray orifice 1, and 2 are the interior container that stores the atomizing steam that is used for the deposit transparent conductive film of nozzle, and the signal of the position of nozzle in scanning means.4 is nozzle both sides distribution reactor off-gas outlet, and 6 is the baffler of four sides of nozzle, and 5 for treating the substrate of deposit transparent conductive film.
(Fig. 2 a) and the schematic diagram of slit spray orifice 3 (Fig. 2 b) for the equally distributed small sircle hole spray orifice 1 of bidimensional of the two-dimentional nozzle bottom among the present invention for Fig. 2
Bottom among Fig. 3 the present invention has the equally distributed small sircle hole spray orifice 1 of one dimension, and (Fig. 3 a) and the nozzle schematic diagram of single slit spray orifice 3 (Fig. 3 b).
The specific embodiment
As Fig. 1, be a nozzle example of the present invention, nozzle interior has the container 2 that stores the atomizing steam that is used for the deposit transparent conductive film, the bottom of nozzle has the structural representation of spray orifice, 4 reactor off-gas outlets for the distribution of nozzle both sides, 6 is the baffler of nozzle four sides, and 5 for treating the substrate of deposit transparent conductive film.
In the example of the present invention, container 2 is used to store the atomizing steam for the treatment of the deposit transparent conductive film, and the distribution of small sircle hole spray orifice 1 is that two dimension evenly distributes, and is distributed in 50 * 50mm
2～150 * 150mm
2In the bidimensional scope, shown in Fig. 2 a.The diameter of small sircle hole spray orifice 1 is 0.4～5.0mm, and the distance between the hole heart of two nearest small sircle hole spray orifices is 1.0～6.0mm.Spray orifice to the distance of substrate 5 in 5～100mm scope.
Also available single slit spray orifice 3 replaces the spray orifice of small sircle hole spray orifice 1 as nozzle, the evenly distributed single slit spray orifice 3 of two dimension constitutes the bidimensional nozzle, the width of slit spray orifice 3 is 0.3～5.0mm, the length of slit spray orifice 3 is 50～150mm, distance between two nearest long strip type slit spray orifices 3 is 1.0～6.0mm, is distributed in 50 * 50mm
2～150 * 150mm
2In the bidimensional scope, shown in Fig. 2 b.
Claims (1)
1. the nozzle of a spray deposited large tracts of land homogeneous transparent conductive film, it is characterized in that, comprise the container (2) that is used to store atomizing steam, store the atomizing steam that is used for the deposit transparent conductive film in the container, the bottom of this nozzle has the aperture of certain rule distribution as spray orifice, spray orifice has (3) two kinds of small sircle hole spray orifice (1) or strip slit spray orifices, small sircle hole spray orifice (1) is that one dimension distributes, form the one dimension nozzle, perhaps, small sircle hole spray orifice (1) forms the bidimensional distribution, then be two-dimentional nozzle, form the one dimension nozzle, or a plurality of long strip type slit spray orifices (3) are arranged in parallel by a slit spray orifice (3), form two-dimentional nozzle, the bottom of nozzle, small sircle hole spray orifice (1) or strip slit spray orifice (3) are directly over substrate (5), in 5～100mm scope, four sides of nozzle are provided with baffler (6) from the distance of substrate (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021507856A CN1194821C (en) | 2002-11-28 | 2002-11-28 | Nozzle for large-area uniform transparent conducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021507856A CN1194821C (en) | 2002-11-28 | 2002-11-28 | Nozzle for large-area uniform transparent conducting film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1411914A CN1411914A (en) | 2003-04-23 |
| CN1194821C true CN1194821C (en) | 2005-03-30 |
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ID=4751837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021507856A Expired - Fee Related CN1194821C (en) | 2002-11-28 | 2002-11-28 | Nozzle for large-area uniform transparent conducting film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1194821C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322935C (en) * | 2005-04-26 | 2007-06-27 | 南开大学 | Nozzle specially used for preparing transparent conductive film by using ultrasonic quick precipitation method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102151325B1 (en) * | 2015-12-11 | 2020-09-02 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | Mist coating film forming apparatus and mist coating film forming method |
| DE102016014944A1 (en) * | 2016-12-14 | 2018-06-14 | Dürr Systems Ag | Coating method and corresponding coating device |
| DE102016014955A1 (en) | 2016-12-14 | 2018-06-14 | Dürr Systems Ag | Coating device and corresponding coating method |
| DE102016014953A1 (en) | 2016-12-14 | 2018-06-14 | Dürr Systems Ag | Painting plant and corresponding painting process |
| CN108744987B (en) * | 2018-06-20 | 2023-09-01 | 华北电力大学 | Water supplementing microstructure and system for gas membrane separation |
-
2002
- 2002-11-28 CN CNB021507856A patent/CN1194821C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322935C (en) * | 2005-04-26 | 2007-06-27 | 南开大学 | Nozzle specially used for preparing transparent conductive film by using ultrasonic quick precipitation method |
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| Publication number | Publication date |
|---|---|
| CN1411914A (en) | 2003-04-23 |
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