CN102443767B - Medium gas assisted vapor-transport deposition device for solar cell thin film deposition - Google Patents
Medium gas assisted vapor-transport deposition device for solar cell thin film deposition Download PDFInfo
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- CN102443767B CN102443767B CN 201110404957 CN201110404957A CN102443767B CN 102443767 B CN102443767 B CN 102443767B CN 201110404957 CN201110404957 CN 201110404957 CN 201110404957 A CN201110404957 A CN 201110404957A CN 102443767 B CN102443767 B CN 102443767B
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- steering pipe
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Abstract
The invention discloses a medium gas assisted vapor-transport deposition device for solar cell thin film deposition. The device comprises a heating beam flow distributor, a heating beam source generator and a heating beam flow transmission pipeline which is in vacuum connection with the heating beam flow distributor and the heating beam source generator. The device has the following advantages: the beam flow distributor, beam source generator and beam flow transmission pipeline all adopt the heating mode so that the properties of the gas source can be stable for long time; the condition that gaseous Cd, Te2 and CdTe are deposited on the pipe wall to block the pipeline can be avoided; by adjusting the opening of a beam flow guide pipe, the uniformity of the properties of the film in the line source direction can be realized; and with the help of the medium gas, the beam flow distributor can eject beam flow downwards or/and upwards.
Description
Technical field
The present invention relates to the thin-film solar cells manufacturing process equipment, specifically refer to the auxiliary gas-phase transport and deposition device of a kind of medium-gas for the solar battery thin film deposition.
Background technology
The Cadimium telluride thin film battery makes it become one of applied film battery of a kind of potentialization because its preparation technology is simple relatively, characteristics such as production efficiency is high, component efficiency height.As the pn knot of core, its technology of preparing has a variety of.The preparation technology who adopts for its p-CdTe has: vacuum-evaporation, near space distillation, vapor transportation, physical vapor deposition, magnetron sputtering, electron chemistry deposition, metal organic chemical vapor deposition (MOCVD), thermospray and silk screen printing deposition etc.First three methods is present main stream approach, and as the emphasis direction of experimental study and industrialization consideration, these three kinds of methods have a lot similarly local, just the difference of details aspect.Have for the normal preparation technology who adopts of N-CdS at present: chemical bath, near space distillation, vapor transportation, magnetron sputtering, this several method all also are several directions that laboratory and industrialization are considered.Wherein the vapor transportation technology is one of mainstream technology.Relevant patent is the earliest seen nineteen ninety-five US5536333, US5470397, US5372646, US5248349, proposed a kind of on substrate of glass the device of continuous deposition Cadimium telluride thin film, glass substrate is positioned at the below of deposition apparatus and carries out plated film.This device adopts resistive heating, and maximum heating temperature is 700 degree.1999, US6037241, US5945163 proposed improvement to this method.Maximum heating temperature is brought up to 1100 degree, near the fusing point of cadmium telluride material.This technology has the feasibility of promoting the large-area preparation film, and the FirstSolar LLC of the U.S. is a well proof.Domestic also have a relevant patent, sees CN201442975U.But from prior art, all be to adopt powder to enter the inner heating of deposition chamber, after become gaseous state, be transported to glass baseplate surface by air-flow; The plated film direction can only be up or down; The injection homogeneity of evaporation source is not good enough, and United States Patent (USP) is not line source truly, opens a seam but adopt in ceramic vessel wall, and it is broad in the middle to crack, the little even control that reaches line in two; The source is evaporation upwards, sprays beam source downwards by the reflex action of reflector, and jet angle is very big, causes loss of material easily; CN201442975U adopts the reflection multilayer plate to realize the even of line.
Summary of the invention
For overcoming the variety of issue that above-mentioned prior art exists, the objective of the invention is to propose a kind of mode that adopts multistage heating, be implemented in the auxiliary gas-phase transport and deposition dress of a kind of medium-gas of uniform deposition film on the substrate.
The auxiliary gas-phase transport and deposition dress of a kind of medium-gas of the present invention comprises: heating line divider, heating electron gun producer, and with heating line divider with heat the heating beam transfer pipeline that electron gun producer vacuum is connected.
Described heating line divider is tubulose, and the beam steering pipe that is nested successively from inside to outside, well heater, insulation layer, thermal insulation layer, watercooling jacket are formed.Beam steering Guan Weiyi root or two.
Described beam steering pipe has a round along tube wall and tubular axis line parallel, this hole to be shaped as circle oval square or conical, it is intensive and interstitial hole is big in the middle of going up to arrange, and sparse and hole dwindles successively to two limits, and concrete size can be decided according to the requirement of deposit film.With the corresponding position of perforate, the well heater that the beam steering pipe is nested outward successively, insulation layer, thermal insulation layer, watercooling jacket have is convenient to the openning that electron gun outwards sprays in the beam steering pipe.
Each is tightly connected with one group of heating beam transfer pipeline vacuum two ends of described beam steering pipe by flange.
Described heating beam transfer pipeline, the transmission pipeline that is nested successively from inside to outside, well heater, insulation layer, thermal insulation layer, watercooling jacket are formed.The other end of heating beam transfer pipeline is connected with the end face vacuum-sealing of the material receptacle of heating electron gun producer, leading to switches near being provided with two with heating electron gun producer junction, at two logical switch places, heating beam transfer pipeline is by one the road or be divided into two the tunnel by one the tunnel.Being divided into two the tunnel by one the tunnel, is two being connected by flange vacuum-sealing respectively with heating line divider then.Also be respectively equipped with two logical switches near the flange place.
Described heating electron gun producer comprises: material receptacle, the timing material supplementary device that is tightly connected with the material receptacle.Material receptacle periphery is provided with the well heater that resistance wire or graphite or silicon carbide or molybdenum, tungsten, platinum are made, the end face of material receptacle is provided with a mouth of pipe and is tightly connected with timing material supplementary device, and the side of material receptacle is provided with the medium-gas intake ducting of a belt switch.Regularly the material supplementary device is made up of the funnel that is tightly connected mutually, charging switch, material temporary room, discharging switch successively.
Heating line divider has a shell outward, and shell is tightly connected with the flange periphery circle that heats line divider two ends and constitutes a deposition chamber.The relative position that has a round at the beam steering pipe is equipped with the movable supporting frame that placement is deposited film substrate.
Advantage of the present invention: line divider, electron gun producer, the beam transfer pipeline all adopts heating, makes this device can guarantee the stable of long-time source of the gas character; Can avoid Cd, the Te of gaseous phase
2, CdTe causes line clogging in the deposition of tube wall; The adjusting of beam steering pipe perforate has realized the homogeneity of line source direction film deposition; The line divider can be realized spraying line downwards down or upwards spray line or the while sprays line downwards and upwards medium-gas auxiliary.
Description of drawings
Fig. 1 is the cross-sectional structure synoptic diagram of the heating line divider of single beam steering pipe.
Fig. 2 is the cross-sectional structure synoptic diagram of the heating line divider of two beam steering pipes.
Fig. 3 is the longitudinal profile structural representation of beam steering pipe.
Fig. 4 is the structural representation of electron gun producer.
Fig. 5 is the cross-sectional view of heating beam transfer pipeline.
Fig. 6 is the auxiliary gas-phase transport and deposition dress of medium-gas that single beam steering pipe sprays downwards.
Fig. 7 is the auxiliary gas-phase transport and deposition dress of medium-gas that single beam steering pipe upwards sprays.
The auxiliary gas-phase transport and deposition dress of medium-gas that Fig. 8 can spray for double joint beam steering pipe simultaneously up and down.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated:
See Fig. 4, the auxiliary gas-phase transport and deposition dress of a kind of medium-gas comprises: heating line divider 1, heating electron gun producer 2, and with heating line divider with heat the heating beam transfer pipeline 3 that electron gun producer vacuum is connected.
Described heating line divider 1 is tubulose, and the beam steering pipe 101 that is nested successively from inside to outside, well heater 102, insulation layer 103, thermal insulation layer 104, watercooling jacket 105 are formed.But insulation layer 103 and thermal insulation layer 104 one decks, two layers or three layers.
Described beam steering pipe 101 has a round 1011 with the tubular axis line parallel on its tube wall, this hole to be shaped as circle oval square or conical, it is intensive and interstitial hole is big in the middle of going up to arrange, and sparse and hole dwindles successively to two limits, and concrete size can be decided according to the requirement of deposit film.Present embodiment adopts circular hole, and the interstitial hole diameter is 3mm, successively decreases according to this with 0.1mm toward the both sides bore dia, and hole dimension minimum in two ends is 1mm.With the corresponding position of a rows of openings, beam steering pipe 101 outer well heater 102, insulation layer 103, thermal insulation layer 104, the watercooling jackets 105 that are nested successively have is convenient to the openning 106 that electron gun outwards sprays in the beam steering pipe.Electron gun enters from the two ends of beam steering pipe, can transport the decay of tolerance in the centre, therefore perforate arrange extremely important, middle intensive and interstitial hole is greatly in order to guarantee that line evenly launches from each hole, the stack of last each hole ejection line constitutes the line style source, and mobile substrate is passed by and can be realized even plated film.Beam steering pipe 101 is adjustable apart from the spacing that is deposited substrate 4, scope 1-20mm.The control reasonable distance should guarantee that beam steering Guan Buhui makes substrate 4 temperature rises too high, can not cause the loss of electron gun again owing to hypertelorism.The function of well heater 102 provides the homogenizing of second compensation heating and air-flow to handle.
Two ends of described beam steering pipe respectively are connected with 3 vacuum-sealings of one group of heating beam transfer pipeline by flange 5.
Described heating beam transfer pipeline 3, the transmission pipeline 301 that is nested successively from inside to outside, well heater 302, insulation layer 303, thermal insulation layer 304, watercooling jacket 305 formed, but insulation layer 303 and thermal insulation layer 304 one decks, two layers or three layers.The other end of heating beam transfer pipeline is connected with end face pipeline 205 vacuum-sealings of the material receptacle 201 of heating electron gun producer 2, and being provided with two logical switches 306 near heating electron gun producer junction, is used for the inflow of control electron gun.
Described heating electron gun producer 2 comprises: material receptacle 201, the timing material supplementary device 202 that is tightly connected with the material receptacle.Material receptacle periphery is provided with any well heater made 203 in resistance wire, graphite, silicon carbide, molybdenum, tungsten, the platinum, the side of material receptacle is provided with a medium-gas intake ducting 207, is provided with the switch 206 of control agent gas flow in the intake ducting 207.Regularly material supplementary device 202 is made up of the funnel 2021 that is tightly connected mutually, charging switch 2022, material temporary room 2023, discharging switch 2024 successively.The Heating temperature scope of well heater 203 is between the 700-1100 degree.Regularly material supplementary device 202 can realize that real-time material replenishes by change-over switch function manually or automatically.
Heating line divider has a shell 6 outward, and shell is tightly connected with the flange excircle that heats line divider two ends and constitutes a deposition chamber 7.The relative position that has a round at the beam steering pipe is equipped with the movable supporting frame 8 that placement is deposited film substrate 4, draws among the function unit figure of movable supporting frame.Electron gun sprays from beam steering pipe tapping, and injection can make progress, also can be downward, see that mainly a round that the beam steering pipe has is upwards or downwards.
This structural difference exists: the beam steering pipe 101 in the heating line divider 1 is two.
Heating beam transfer pipeline 3 is divided into two the tunnel by one the tunnel, respectively by flange and two beam steering pipe coupling.
In deposition chamber 7, the relative position that corresponding two beam steering pipes have a round is equipped with respectively places the movable supporting frame 8 that is deposited film substrate 4.
The film that apparatus of the present invention can transport deposition is cadmium telluride, Cadmium Sulfide, Cadmium chloride fine powder, selenium and selenide etc.; Medium-gas adopts rare gas element, is helium, nitrogen, argon gas.
Claims (2)
1. a medium-gas that is used for the solar cell thin film deposition is assisted the gas-phase transport and deposition device, comprise: heat line divider (1), heating electron gun producer (2), the heating beam transfer pipeline (3) that is connected with heating line divider and heating electron gun producer vacuum; It is characterized in that:
Described heating line divider (1) is tubulose, and the beam steering pipe (101) that is nested successively from inside to outside, well heater (102), insulation layer (103), thermal insulation layer (104), watercooling jacket (105) are formed;
Described beam steering pipe (101) has a round (1011) with the tubular axis line parallel on its tube wall, this hole to be shaped as circle oval square or conical, it is intensive and interstitial hole is big in the middle of going up to arrange, sparse and hole dwindles successively to two limits, and concrete size can be decided according to the requirement of deposit film; With the corresponding position of a rows of openings, outer well heater (102), insulation layer (103), thermal insulation layer (104), the watercooling jacket (105) that is nested successively of beam steering pipe (101) has is convenient to the openning (106) that electron gun outwards sprays in the beam steering pipe;
Each is connected with the vacuum-sealing of one group of heating beam transfer pipeline (3) two ends of described beam steering pipe by flange (5);
Described heating beam transfer pipeline (3), the transmission pipeline that is nested successively from inside to outside (301), well heater (302), insulation layer (303), thermal insulation layer (304), watercooling jacket (305) are formed; The other end of heating beam transfer pipeline is connected with end face pipeline (205) vacuum-sealing of the material receptacle (201) of heating electron gun producer (2), and being provided with two logical switches (306) near heating electron gun producer junction, is used for the inflow of control electron gun;
Described heating electron gun producer (2) comprising: material receptacle (201), the timing material supplementary device (202) that is tightly connected with the material receptacle; Material receptacle periphery is provided with any well heater made (203) in resistance wire, graphite, silicon carbide, molybdenum, tungsten, the platinum, the side of material receptacle is provided with a medium-gas intake ducting (207), is provided with the switch (206) of control agent gas flow in the intake ducting (207); Regularly material supplementary device (202) is made up of the funnel that is tightly connected mutually (2021), charging switch (2022), material temporary room (2023), discharging switch (2024) successively;
Heating line divider has a shell (6) outward, and shell is tightly connected with the flange excircle that heats line divider two ends and constitutes a deposition chamber (7); The relative position that has a round at the beam steering pipe is equipped with the movable supporting frame (8) that placement is deposited film substrate (4).
2. according to the auxiliary gas-phase transport and deposition device of a kind of medium-gas for the solar cell thin film deposition of claim 1, it is characterized in that: described beam steering pipe (101) is one or two; If beam steering pipe (101) is two, then heats beam transfer pipeline (3) and be divided into two the tunnel by No. one fork, respectively successively by two logical switch (306) and flanges (5) and two beam steering pipe coupling.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110404957 CN102443767B (en) | 2011-12-08 | 2011-12-08 | Medium gas assisted vapor-transport deposition device for solar cell thin film deposition |
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| CN 201110404957 CN102443767B (en) | 2011-12-08 | 2011-12-08 | Medium gas assisted vapor-transport deposition device for solar cell thin film deposition |
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| CN102443767B true CN102443767B (en) | 2013-08-21 |
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| CN104789945B (en) * | 2015-04-01 | 2017-05-24 | 华东师范大学 | Vapor transport deposition device of solar battery absorbing layer |
| CN108048802B (en) * | 2018-01-19 | 2023-06-09 | 华东师范大学 | Vacuum coating machine for depositing thin film solar cell absorption layer by large-area thermal evaporation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101504959A (en) * | 2009-03-16 | 2009-08-12 | 山东润峰集团有限公司 | Gas transportation and deposition apparatus |
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| JP2000247800A (en) * | 1998-12-28 | 2000-09-12 | Asahi Chem Ind Co Ltd | Metal oxide structure having projection |
| CN101525743B (en) * | 2009-04-23 | 2011-06-15 | 浙江嘉远格隆能源股份有限公司 | Method for depositing semi-conductor film on substrate by using close-space sublimation technology and device thereof |
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| CN101504959A (en) * | 2009-03-16 | 2009-08-12 | 山东润峰集团有限公司 | Gas transportation and deposition apparatus |
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