CN119230457B - Ion filtering device and method for controlling photoresist stripping ashing rate uniformity - Google Patents

Ion filtering device and method for controlling photoresist stripping ashing rate uniformity Download PDF

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Publication number
CN119230457B
CN119230457B CN202411745829.4A CN202411745829A CN119230457B CN 119230457 B CN119230457 B CN 119230457B CN 202411745829 A CN202411745829 A CN 202411745829A CN 119230457 B CN119230457 B CN 119230457B
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wafer
gas
photoresist
rate value
photoresist stripping
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CN119230457A (en
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易飞
王兆祥
方文强
彭国发
梁洁
赵兵
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Shanghai Bangxin Semiconductor Technology Co ltd
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Shanghai Bangxin Semiconductor Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
    • B01D46/12—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明提供了一种离子过滤装置及控制去胶灰化速率均匀性的方法，所述离子过滤装置及控制去胶灰化速率均匀性的方法应用于半导体制造领域，所述离子过滤装置包括：第一过滤件、气体传输组件以及第二过滤件；第一过滤件和第二过滤件分别安装在气体传输组件的两侧。本发明通过设置气体传输组件，使反应气体在经过离子过滤装置时能够对其气体流量进行调节，进而调节反应气体对晶圆的去胶灰化速率，增加了晶圆的去胶灰化速率的可调参数，提高了晶圆整体去胶灰化速率的均匀性，进一步提高了晶圆的生产质量，改善了生产工艺。

The present invention provides an ion filtering device and a method for controlling the uniformity of de-bonding ashing rate, which are applied to the field of semiconductor manufacturing, and the ion filtering device comprises: a first filter element, a gas transmission component and a second filter element; the first filter element and the second filter element are respectively installed on both sides of the gas transmission component. The present invention sets a gas transmission component so that the gas flow rate of the reaction gas can be adjusted when passing through the ion filtering device, thereby adjusting the de-bonding ashing rate of the reaction gas on the wafer, increasing the adjustable parameters of the de-bonding ashing rate of the wafer, improving the uniformity of the overall de-bonding ashing rate of the wafer, further improving the production quality of the wafer, and improving the production process.

Description

Ion filtering device and method for controlling photoresist stripping ashing rate uniformity
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an ion filtering device and a method for controlling photoresist stripping ashing rate uniformity.
Background
Semiconductors refer to materials that have electrical conductivity properties at normal temperatures that are intermediate between conductors and insulators. Semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting applications, high power conversion, and other fields. In the current high-temperature photoresist stripping process for semiconductor manufacture, the photoresist stripping and ashing rate uniformity of the wafer has few adjustable parameters, and when the uniformity is bad, the adjustment is difficult to be carried out by a method.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide an ion filtering device, so as to solve the technical problems that in the prior art, the uniformity of photoresist removing and ashing rate of a wafer is less, and when the uniformity is bad, a method is difficult to adjust.
The ion filtering device comprises a first filtering piece, a gas transmission assembly and a second filtering piece, wherein the first filtering piece and the second filtering piece are respectively arranged on two sides of the gas transmission assembly, and the gas transmission assembly is used for providing reaction gas or inert gas for the periphery of a wafer so as to adjust the photoresist stripping ashing rate of the periphery of the wafer.
According to the ion filtering device provided by the embodiment of the invention, the gas transmission assembly is arranged between the first filtering piece and the second filtering piece, so that the concentration distribution of the reaction gas can be adjusted when the reaction gas passes through the ion filtering device, the photoresist stripping and ashing rate of the wafer by the reaction gas is further adjusted, the adjustable parameter of the photoresist stripping and ashing rate of the wafer is increased, the uniformity of the photoresist stripping and ashing rate of the whole wafer is improved, the quality of the produced wafer is further improved, and the production process is improved.
In addition, the ion filtering device according to the embodiment of the invention can also have the following additional technical characteristics:
In some embodiments of the invention, the gas transmission assembly comprises a gas transmission piece and a gas supply pipeline, wherein the gas transmission piece is constructed into an annular structure, an annular gas channel concentric with the annular structure is constructed on the gas transmission piece, the gas transmission piece comprises an inner wall, an outer wall and a plurality of gas outlet holes, the gas outlet holes are uniformly arranged on the inner wall and communicated with the annular gas channel, and the gas supply pipeline is arranged on the outer wall and communicated with the annular gas channel.
In some embodiments of the invention, the gas transmission assembly comprises a gas transmission piece and a gas supply pipeline, wherein the gas transmission piece is constructed into an annular structure, a plurality of independent circular arc-shaped gas channels are further arranged on the gas transmission piece, the circular arc-shaped gas channels are arranged concentrically with the annular structure, the gas transmission piece comprises an inner wall, an outer wall and gas outlet holes, the gas outlet holes are arranged on the inner wall and communicated with the circular arc-shaped gas channels, and the gas supply pipeline is arranged on the outer wall and communicated with the gas channels.
In some embodiments of the present invention, the first filter element is provided with a plurality of first filter holes, the plurality of first filter holes are uniformly distributed on the first filter element, the second filter element is provided with a plurality of second filter holes, the plurality of second filter holes are uniformly distributed on the second filter element, and the first filter holes and the second filter holes are staggered along a first direction.
A second object of the present invention is to provide a method for controlling photoresist ashing rate uniformity, which is applied to the above-mentioned ion filtering device.
According to the embodiment of the invention, the method for controlling the photoresist stripping ashing rate uniformity comprises the following steps:
Detecting initial photoresist removing ashing rate to obtain a first photoresist removing ashing rate value F1 of a central area of the wafer and a second photoresist removing ashing rate value F2 of a peripheral area of the wafer;
And controlling the gas transmission component to provide reactive gas or inert gas for the peripheral area of the wafer based on the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 so as to adjust the photoresist stripping rate of the peripheral area of the wafer to be consistent with the photoresist stripping rate of the central area of the wafer.
According to the method for controlling the photoresist stripping ashing rate uniformity, disclosed by the embodiment of the invention, the control parameter of the photoresist stripping ashing rate of the wafer is increased, the uniformity of the photoresist stripping ashing rate of the wafer is improved, the process window is improved, the produced wafer has higher yield, and the production cost is reduced.
In some embodiments of the invention, the method further comprises the steps of:
When the first photoresist stripping rate value F1 is larger than the second photoresist stripping rate value F2, controlling the gas transmission component to provide reaction gas for the peripheral area of the wafer so as to improve the photoresist stripping rate of the peripheral area of the wafer;
When the first photoresist stripping rate value F1 is smaller than the second photoresist stripping rate value F2, controlling the gas transmission component to provide inert gas for the peripheral area of the wafer so as to reduce the photoresist stripping rate of the peripheral area of the wafer.
In some embodiments of the invention, the method further comprises the steps of:
dividing the peripheral area of the wafer into a plurality of parts, wherein the plurality of parts of peripheral area of the wafer are arranged in one-to-one correspondence with the gas channels;
Detecting the initial photoresist removing ashing rate of the wafer to obtain a plurality of parts of third photoresist removing ashing rate values fn of the peripheral area of the wafer;
when the third photoresist stripping rate value fn is different from the first photoresist stripping rate value F1, adjusting the gas in the corresponding gas channel to independently control the third photoresist stripping rate value fn to be consistent with the first photoresist stripping rate value F1.
In some embodiments of the invention, the method further comprises the steps of:
When the third photoresist stripping rate value fn is larger than the first photoresist stripping rate value F1, controlling the gas transmission assembly to provide inert gas for the peripheral area of the wafer, and independently adjusting the gas transmission assembly according to the third photoresist stripping rate value fn to control the gas flow of the inert gas so as to keep all the third photoresist stripping rate values fn consistent with the first photoresist stripping rate value F1.
In some embodiments of the invention, the method further comprises the steps of:
When the third photoresist stripping rate value fn is smaller than the first photoresist stripping rate value F1, controlling the gas transmission component to provide reaction gas for the peripheral area of the wafer, and independently adjusting the gas transmission component according to the third photoresist stripping rate value fn to control the gas flow of the reaction gas so as to keep all the third photoresist stripping rate value fn consistent with the first photoresist stripping rate value F1.
In some embodiments of the invention, the method further comprises the steps of:
When a part of the third photoresist stripping rate value fn is smaller than the first photoresist stripping rate value F1 and another part of the third photoresist stripping rate value fn is larger than the first photoresist stripping rate value F1, controlling a part of the gas transmission component to provide reaction gas for the peripheral area of the wafer with the third photoresist stripping rate value fn smaller than the first photoresist stripping rate value F1, controlling another part of the gas transmission component to provide inert gas for the peripheral area of the wafer with the third photoresist stripping rate value fn larger than the first photoresist stripping rate value F1, and independently adjusting the gas transmission component according to the third photoresist stripping rate value fn to control the gas flow of the reaction gas or the inert gas so as to keep all the third photoresist stripping rate value fn consistent with the first photoresist stripping rate value F1.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic view of an ion filter according to an embodiment of the present invention;
FIG. 2 is a schematic view of a gas delivery member according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a gas delivery member according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of another gas delivery member according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a third gas delivery member according to an embodiment of the present invention;
FIG. 6 is a schematic view illustrating a wafer surface division according to an embodiment of the present invention;
FIG. 7 is a schematic view of another wafer surface division in accordance with an embodiment of the present invention;
Fig. 8 is a flowchart of a method of controlling photoresist stripping ash rate uniformity in accordance with a first embodiment of the invention.
Reference numerals
100. An ion filtration device;
10. 11, a first filtering hole;
20. the device comprises a gas conveying part, 201, an inner wall, 202, an outer wall, 23, gas outlet holes, 24a, an annular gas channel, 24b and an arc-shaped gas channel;
30. And 31, a second filter element and a second filter hole.
200. A wafer;
21. a wafer center region;
22. Wafer peripheral area, 221, first wafer peripheral area, 222, second wafer peripheral area, 223, third wafer peripheral area, 224, fourth wafer peripheral area.
Detailed Description
An ion filtering apparatus and a method of controlling photoresist removal rate uniformity of the present invention will be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art can modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the specification. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise.
The invention is more particularly described by way of example in the following paragraphs with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
An ion filtering apparatus 100 according to an embodiment of the present invention is described below with reference to fig. 1 to 7.
As shown in fig. 1, the ion filtering apparatus 100 according to the embodiment of the invention includes a first filter 10, a gas transmission assembly and a second filter 30, wherein the first filter 10 and the second filter 30 are respectively installed at both sides of the gas transmission assembly, and the gas transmission assembly is used for providing a reaction gas or an inert gas to the periphery of a wafer 200 so as to adjust the photoresist stripping ashing rate of the periphery of the wafer.
Specifically, the reaction gas sequentially passes through the first filter 10 and the second filter 30 along the first direction, the first filter 10 disperses the reaction gas for the first time, and the second filter 30 disperses the reaction gas for the second time, so that the reaction gas finally passing through the second filter 30 can uniformly contact the photoresist on the surface of the wafer 200 and perform a photoresist ashing reaction with the photoresist.
However, as mentioned in the background, the conventional structure and method have few parameters for adjusting the uniformity of the photoresist removing and ashing rate of the wafer, and it is difficult to adjust the uniformity of the wafer in a case of poor uniformity. In view of this, in this embodiment, the gas transmission component is added between the first filter 10 and the second filter 30, and the flow of the reaction gas reaching the peripheral area 22 of the wafer is adjusted by the gas transmission component, so that the photoresist ashing rate of the peripheral area 22 of the wafer can be adjusted to be consistent with the photoresist ashing rate of the central area 21 of the wafer, and further, by adjusting other reaction parameters, it is ensured that the photoresist ashing of the whole wafer 200 can be completely reacted, and there is no situation that the photoresist in a partial area is completely reacted, but the photoresist in other areas remains.
Specifically, when the photoresist removing and ashing rates of the surface of the wafer 200 are inconsistent, the gas transmission assembly installed between the first filter 10 and the second filter 30 is configured to transmit the reactive gas or the inert gas for the reactive gas that is dispersed for the first time, so as to adjust the concentration of the reactive gas at different positions of the surface of the wafer 200 after the reactive gas is dispersed for the second time, thereby adjusting the photoresist removing and ashing rate of the periphery of the wafer 200, and enabling the photoresist removing and ashing rate of the whole wafer 200 to be consistent.
The first direction is the arrangement direction of the first filter element 10 and the second filter element 30, that is, the direction in which the reaction gas passes through the first filter element 10 and the second filter element 30, as shown in the "Z" direction in fig. 1.
In addition, the ion filtering device 100 provided according to the present embodiment may further have the following additional technical features:
In some embodiments, the gas delivery assembly comprises a gas delivery member 20 and a gas supply pipeline (not shown), wherein the gas delivery member 20 is configured into an annular structure, the gas delivery assembly is provided with an annular gas channel 24a, the gas delivery assembly comprises an inner wall 201, an outer wall 202 and a plurality of gas outlet holes 23, the plurality of gas outlet holes 23 are uniformly arranged on the inner wall 201 and communicated with the annular gas channel 24a, and the gas supply pipeline is arranged on the outer wall 202 and communicated with the annular gas channel 24a.
Specifically, a cavity (not shown) is formed between the first filter 10, the second filter 30, and the inner wall 201 of the gas delivery member 20, and when the photoresist removing ashing rate of the peripheral area 22 of the wafer is inconsistent with the photoresist removing ashing rate of the central area 21 of the wafer, the gas supply pipeline is controlled to input a reactive gas or an inert gas into the annular gas channel 24a, so that the reactive gas or the inert gas can enter the cavity through the plurality of gas outlet holes 23 and be mixed with the reactive gas dispersed for the first time, the concentration of the reactive gas near the inner wall 201 is adjusted, and then the concentration of the reactive gas passing through the second filter 30 in the peripheral area 22 of the wafer is adjusted, that is, the photoresist removing ashing rate of the peripheral area 22 of the wafer is adjusted, so that the consistency of the overall photoresist removing ashing rate of the wafer 200 is improved.
When the photoresist removing rate of the peripheral area 22 of the wafer is higher than that of the central area 21 of the wafer, the gas supply pipeline is controlled to input inert gas into the annular gas channel 24a, the photoresist removing rate of the peripheral area 22 of the wafer is reduced until the photoresist removing rate matches with that of the central area 21 of the wafer, so that the photoresist removing rate of the whole wafer 200 is kept consistent, and when the photoresist removing rate of the peripheral area 22 of the wafer is lower than that of the central area 21 of the wafer, the gas supply pipeline is controlled to input reactive gas into the annular gas channel 24a, so that the photoresist removing rate of the peripheral area 22 of the wafer is increased until the photoresist removing rate matches with that of the central area 21 of the wafer, so that the whole wafer 200 is kept consistent.
That is, on the one hand, by providing the annular gas channel 24a on the gas delivery member 20, the gas delivery member 20 is connected to one gas supply pipeline, so that the photoresist removing and ashing rate of the whole wafer 200 can be controlled, on the other hand, the photoresist removing and ashing rate can be adjusted by selectively introducing the reactive gas or the inert gas according to the photoresist removing and ashing rate of the peripheral region 22 of the wafer, and in addition, the flow rates of the reactive gas and the inert gas can be adjusted according to the photoresist removing and ashing rate difference between the peripheral region 22 and the central region of the wafer, so that the photoresist removing and ashing rates of the peripheral region 22 and the central region of the wafer are kept consistent. Meanwhile, the gas transmission assembly is simple in structure and rapid in adjustment, production cost can be reduced, and production efficiency of the wafer 200 is improved.
In some embodiments of the present invention, a plurality of the gas supply lines may be provided, the plurality of gas supply lines being circumferentially uniformly installed on the outer wall 202, and the gas supply lines being in communication with the annular gas passage 24 a. When the photoresist removing and ashing rate of the peripheral area 22 of the wafer is inconsistent with the photoresist removing and ashing rate of the central area 21 of the wafer, the plurality of gas supply pipes are controlled to supply the reactive gas or the inert gas into the annular gas channel 24a, so that the photoresist removing and ashing rate of the whole wafer 200 is consistent. By providing a plurality of gas supply lines, the reactive gas or inert gas inputted into the annular gas channel 24a can be uniformly distributed, and the photoresist stripping rate of the peripheral area 22 of the wafer can be adjusted more quickly, so that the photoresist stripping rate of the whole wafer 200 is kept consistent.
In the present invention, "a plurality of" means two or more, and the description thereof is not repeated here.
In some embodiments of the present invention, the gas transmission assembly includes a gas transmission member 20 and a gas supply pipeline, as shown in fig. 2 and 4, the gas transmission member 20 is configured in an annular structure, a plurality of independent circular arc gas channels 24b are further provided on the gas transmission member 20, the circular arc gas channels 24b are concentrically arranged with the annular structure, the gas transmission member 20 includes an inner wall 201, an outer wall 202 and a gas outlet hole 23, the gas outlet hole 23 is provided on the inner wall 201 and is communicated with the gas channels, and a plurality of gas supply pipelines are provided on the outer wall 202 and are correspondingly communicated with a plurality of gas channels.
Specifically, the plurality of gas outlet holes 23 are circumferentially and uniformly distributed on the inner wall 201, each of the circular arc-shaped gas channels 24b is communicated with the plurality of gas outlet holes 23, and each of the circular arc-shaped gas channels 24b corresponds to an area on the periphery of the conditioning wafer 200. When the photoresist removing ashing rate of one of the peripheral areas of the wafer 200 is higher than the photoresist removing ashing rate of the central area 21 of the wafer, the corresponding gas supply pipeline is controlled to input inert gas into the arc-shaped gas channel 24b, so that the concentration of the reaction gas corresponding to the peripheral area of the wafer is reduced, and the photoresist removing ashing rate is reduced to be consistent with the photoresist removing ashing rate of the central area 21 of the wafer.
Of course, the adjustment when the photoresist ashing rate of one of the peripheral areas of the wafer 200 is lower than that of the central area 21 of the wafer is similar to the above operation steps, and the detailed description is not repeated here.
When the photoresist removing and ashing rates of the peripheral areas of the wafer 200 are inconsistent with the photoresist removing and ashing rates of the central area 21 of the wafer, the plurality of gas supply pipelines are respectively controlled to input a reactive gas or an inert gas, that is, the peripheral areas of the wafer 200 are higher than the photoresist removing and ashing rate of the central area, the inert gas is input into the gas supply pipelines to reduce the photoresist removing and ashing rate, the peripheral areas of the wafer 200 are lower than the photoresist removing and ashing rate of the central area, and the reactive gas is input into the gas supply pipelines to improve the photoresist removing and ashing rate, so that the photoresist removing and ashing rates of the peripheral areas of the wafer 200 are consistent with the photoresist removing and ashing rates of the central area 21 of the wafer.
It can be appreciated that by providing a plurality of the circular arc-shaped gas channels 24b on the gas delivery member 20, the gas delivery assembly can differentially adjust the photoresist stripping rate of different areas on the periphery of the wafer 200, so as to further improve the uniformity of the overall photoresist stripping rate of the wafer 200.
In some embodiments of the present invention, the gas delivery assembly includes a gas delivery member 20 and a gas supply pipeline, as shown in fig. 2 and 5, the gas delivery member 20 is configured in a ring structure, the gas delivery member 20 includes an inner wall 201, an outer wall 202, and a plurality of gas outlet holes 23, the gas outlet holes 23 are disposed on the inner wall 201 and are in communication with the outer wall 202, and a plurality of gas supply pipelines are disposed on the outer wall 202 and are correspondingly in communication with the plurality of gas outlet holes 23.
For example, when the photoresist ashing rate of one of the peripheral regions of the wafer 200 is lower than that of the central region 21 of the wafer, the corresponding gas supply line is controlled to input the reactive gas into the cavity through the gas outlet holes 23, so as to change the peripheral concentration of the reactive gas dispersed for the first time, increase the concentration of the reactive gas of the wafer 200 corresponding to the peripheral region of the wafer, and increase the photoresist ashing rate to be consistent with that of the central region 21 of the wafer.
For another example, when the photoresist ashing rates of the peripheral areas of the wafer 200 are different from the photoresist ashing rate of the central area 21, the gas supply lines are respectively controlled to supply the reactive gas or the inert gas, so that the photoresist ashing rates of the peripheral areas of the wafer 200 are kept identical to the photoresist ashing rates of the central area 21.
It can be appreciated that, by connecting each of the air outlet holes 23 to a corresponding air supply pipe, the photoresist removing and ashing rate of the periphery of the wafer 200 can be finely adjusted, so as to improve the uniformity of the photoresist removing and ashing rate of the whole wafer 200.
It should be noted that the number of the air outlet holes 23 may be 2,3, 4, 5 or more, and the number of the actual air outlet holes 23 is set according to the production requirement, which is not described in detail herein.
In some embodiments of the present invention, as shown in fig. 1, the first filter 10 is provided with a plurality of first filter holes 11, the plurality of first filter holes 11 are uniformly distributed on the first filter 10, the second filter 30 is provided with a plurality of second filter holes 31, the plurality of second filter holes 31 are uniformly distributed on the second filter 30, and the first filter holes 11 and the second filter holes 31 are staggered along the first direction.
That is, when the reaction gas enters the ion filtering device 100, the reaction gas passes through the first filtering holes 11, and then enters the cavity, passes through the second filtering holes 31 from the cavity, and passes through the second dispersing holes, and the reaction gas is uniformly dispersed through the first dispersing and the second dispersing, wherein the staggered arrangement of the first filtering holes 11 and the second filtering holes 31 further enhances the dispersion strength, avoids the concentrated distribution of the reaction gas, and enables the reaction gas to be uniformly distributed on the surface of the wafer 200, thereby improving the uniformity of the photoresist stripping and ashing rate of the whole wafer 200.
It should be noted that, the first filter hole 11 and the second filter hole 31 shown in fig. 1 are only partially shown, and the actual number of the first filter hole 11 and the actual number of the second filter hole 31 are set according to the actual production requirement, which is not described in detail herein.
A second object of the present invention is to provide a method of controlling photoresist ashing rate uniformity, which is applied to the above-mentioned ion filtering apparatus 100.
According to an embodiment of the invention, as shown in fig. 6 and 8, a method for controlling photoresist stripping ashing rate uniformity includes the steps of:
Performing initial photoresist removing ashing rate detection to obtain a first photoresist removing ashing rate value F1 of the central area 21 of the wafer and a second photoresist removing ashing rate value F2 of the peripheral area of the wafer;
And controlling the gas transmission component to provide reactive gas or inert gas for the peripheral area 22 of the wafer based on the first photoresist stripping rate value F1 and the first photoresist stripping rate value F2 so as to adjust the photoresist stripping rate of the peripheral area 22 of the wafer to be consistent with the photoresist stripping rate of the central area.
Specifically, by monitoring the photoresist stripping and ashing rate of the central area 21 and the photoresist stripping and ashing rate of the peripheral area 22 of the wafer in real time, the gas transmission assembly can adjust the photoresist stripping and ashing rate of the whole wafer 200 in real time, so as to ensure the uniformity of the photoresist stripping and ashing rate of the whole wafer 200.
According to the method for controlling the photoresist stripping and ashing rate uniformity, disclosed by the embodiment of the invention, the control parameter of the photoresist stripping and ashing rate of the wafer 200 is increased, the uniformity of the photoresist stripping and ashing rate of the wafer 200 is improved, the process window is improved, the produced wafer 200 has higher yield, and the production cost is reduced.
In some embodiments of the present invention, as shown in fig. 6, the method further comprises the steps of:
when the first photoresist removing ashing rate value F1 is greater than the second photoresist removing ashing rate value F2, controlling the gas transmission assembly to provide the reaction gas for the peripheral area 22 of the wafer so as to increase the photoresist removing ashing rate of the peripheral area 22 of the wafer;
When the first photoresist removing ashing rate F1 is smaller than the second photoresist removing ashing rate F2, the gas transmission assembly is controlled to provide inert gas for the peripheral area 22 of the wafer so as to reduce the photoresist removing ashing rate of the peripheral area 22 of the wafer.
Specifically, by monitoring the photoresist stripping rate of the wafer 200 in real time and controlling the concentration of the reactive gas at the periphery of the wafer 200 in real time, when the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 satisfy F1> F2, the concentration of the reactive gas at the periphery of the wafer 200 is increased, and then the photoresist stripping rate at the periphery of the wafer 200 is increased, so that the photoresist stripping rate of the whole wafer 200 is kept consistent, and when the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 satisfy F1< F2, the concentration of the reactive gas at the periphery of the wafer 200 is reduced, and then the photoresist stripping rate at the periphery of the wafer 200 is reduced, so that the photoresist stripping rate of the whole wafer 200 is kept consistent.
That is, based on the real-time monitoring of the photoresist stripping ashing rate at the periphery of the wafer 200, the uniformity of the photoresist stripping reaction rate of the whole wafer 200 is improved by the real-time control of the concentration of the reaction gas at the periphery of the wafer 200.
In some embodiments of the present invention, as shown in fig. 7, the method further comprises the steps of:
dividing the wafer peripheral area 22 into a plurality of parts, wherein the plurality of parts of wafer peripheral areas 22 are arranged in one-to-one correspondence with the gas channels;
as shown in fig. 8, the wafer 200 is subjected to initial photoresist stripping ashing rate detection to obtain a plurality of third photoresist stripping ashing rate values fn of the peripheral area 22 of the wafer;
When the third photoresist stripping rate value fn is different from the first photoresist stripping rate value F1, adjusting the corresponding gas in the gas channel to independently control the third photoresist stripping rate value fn to be consistent with the first photoresist stripping rate value F1.
That is, by dividing the peripheral area of the wafer 200 into a plurality of parts, and each part of the peripheral area of the wafer 200 corresponds to one gas channel, each peripheral area of the wafer 200 has one gas channel for controlling the concentration of the reaction gas, that is, the photoresist stripping rate of each peripheral area of the wafer can be independently controlled, so that the refinement degree of the overall photoresist stripping rate control of the wafer 200 is further improved, and the uniformity of the overall photoresist stripping rate of the wafer 200 is improved.
In some embodiments of the present invention, as shown in fig. 7 and 8, the method further includes the steps of:
When the third photoresist stripping rate value fn is greater than the first photoresist stripping rate value F1, controlling the gas transmission assembly to provide inert gas for the peripheral region 22 of the wafer, and independently adjusting the gas transmission assembly according to the third photoresist stripping rate value fn to control the gas flow of the inert gas so as to keep all the third photoresist stripping rate values fn consistent with the first photoresist stripping rate value F1.
Specifically, when the first photoresist stripping rate value F1 and the third photoresist stripping rate value fn satisfy that F1 is greater than or equal to fn, in the plurality of parts of the wafer peripheral regions 22, there are regions in which the photoresist stripping rate is identical to that of the wafer central region 21, and there are regions in which the photoresist stripping rate is lower than that of the wafer central region 21, by differentially adjusting the plurality of parts of the wafer peripheral regions 22, the reaction gas flow rate in the region in which the third photoresist stripping rate value fn is identical to the first photoresist stripping rate value F1 is kept unchanged, and in the region in which the third photoresist stripping rate value fn is smaller than the first photoresist stripping rate value F1, the photoresist stripping rate in the part of the wafer peripheral region in which the photoresist stripping rate is lower than that of the wafer central region 21 is controlled by controlling the corresponding gas flow rate of the gas channel is increased until the photoresist stripping rate in the part of the wafer peripheral region is increased to be identical to that of the photoresist stripping rate in the wafer central region 21.
In addition, when the first photoresist removing rate value F1 and the third photoresist removing rate value fn satisfy that F1> fn, there is no region in the wafer peripheral region 22 in which the photoresist removing rate is consistent with the photoresist removing rate of the wafer central region 21, that is, the third photoresist removing rate value fn of the wafer peripheral region 22 is all smaller than the first photoresist removing rate value F1, wherein it should be noted that if the difference between the third photoresist removing rate value fn of the different wafer peripheral regions 22 and the first photoresist removing rate value F1 is different, by performing differential adjustment on the wafer peripheral regions 22, the gas channels corresponding to the wafer peripheral regions 22 are increased with different degrees of gas flow until the third photoresist removing rate fn of the wafer peripheral region 22 is consistent with the first photoresist removing rate value F1.
In some embodiments of the present invention, as shown in fig. 7 and 8, the method further includes the steps of:
When the third photoresist stripping rate value fn is smaller than the first photoresist stripping rate value F1, controlling the gas transmission component to provide the reaction gas for the peripheral region 22, and independently adjusting the gas transmission component according to the photoresist stripping rate value fn of the peripheral region 22 to control the gas flow of the reaction gas so as to keep the photoresist stripping rate value fn of all the peripheral region 22 consistent with the photoresist stripping rate value F1 of the central region 21.
Specifically, when the first photoresist stripping rate value F1 and the third photoresist stripping rate value fn satisfy that F1 is greater than or equal to fn, in the plurality of parts of the wafer peripheral regions 22, there are regions where the photoresist stripping rate is consistent with the photoresist stripping rate of the wafer central region 21, and there are regions where the photoresist stripping rate is higher than the photoresist stripping rate of the wafer central region 21, by performing differential adjustment on the plurality of parts of the wafer peripheral regions 22, the reaction gas flow rate in the region where the third photoresist stripping rate value fn is consistent with the first photoresist stripping rate value F1 is kept unchanged, and the part of the third photoresist stripping rate value fn is greater than the first photoresist stripping rate value F1, and by controlling the gas flow rate of the corresponding gas channel, the photoresist stripping rate of the part of the wafer peripheral region where the photoresist stripping rate is lower than the wafer central region 21 is controlled to be reduced to be consistent with the photoresist stripping rate of the wafer central region 21.
In addition, when the first photoresist removing ash rate value F1 and the third photoresist removing ash rate value fn satisfy that F1< fn, the third photoresist removing ash rate values fn of the wafer peripheral area 22 are all larger than the first photoresist removing ash rate value F1, wherein it should be noted that if the differences between the third photoresist removing ash rate values fn of different wafer peripheral areas 22 and the first photoresist removing ash rate value F1 are different, inert gases with different degrees of gas flow are added to the gas channels corresponding to the wafer peripheral areas 22 until the third photoresist removing ash rate values fn of the wafer peripheral area 22 and the first photoresist removing ash rate value F1 keep consistent.
In some embodiments of the present invention, as shown in fig. 7 and 8, the method further includes the steps of:
When a part of the third photoresist removing ash rate value fn is smaller than the first photoresist removing ash rate value F1 and another part of the third photoresist removing ash rate value fn is larger than the first photoresist removing ash rate value F1, controlling a part of the gas transmission component to provide reaction gas for the wafer peripheral region 22 with the third photoresist removing ash rate value fn smaller than the first photoresist removing ash rate value F1, controlling another part of the gas transmission component to provide inert gas for the wafer peripheral region 22 with the third photoresist removing ash rate value fn larger than the first photoresist removing ash rate value F1, and independently adjusting the gas transmission component according to the photoresist removing ash rate value fn of the wafer peripheral region 22 to control the gas flow of the reaction gas or the inert gas so as to keep the photoresist removing ash rate value fn of all the wafer peripheral region 22 consistent with the photoresist removing ash rate value F1 of the wafer central region 21.
That is, in the several peripheral areas 22, there are areas with photoresist removing and ashing rate greater than that of the central area 21, and there are areas with photoresist removing and ashing rate lower than that of the central area 21, that is, by performing differential adjustment on different areas, the gas transmission assembly is controlled to input reaction gas to the peripheral areas 22 of the wafer with photoresist removing and ashing rate lower than that of the central area 21, to increase the photoresist removing and ashing rate until the photoresist removing and ashing rate is consistent with that of the central area 21, and the gas transmission assembly is controlled to input inert gas to the peripheral areas 22 of the wafer with photoresist removing and ashing rate higher than that of the central area 21, to decrease the photoresist removing and ashing rate until the photoresist removing and ashing rate is consistent with that of the central area 21.
Further, in the plurality of wafer peripheral regions 22, there are regions having a photoresist removing ashing rate greater than that of the wafer central region 21, there are regions having a photoresist removing ashing rate lower than that of the wafer central region 21, and there are portions of the wafer peripheral regions 22 having a photoresist removing ashing rate equal to that of the wafer central region 21, and it should be noted that, when the differential adjustment is performed, the portions of the wafer peripheral regions 22 having a photoresist removing ashing rate equal to that of the wafer central region 21 and the first photoresist removing ashing rate are continuously kept consistent by monitoring and controlling the corresponding gas channels in real time.
It should be noted that, the number of the wafer peripheral areas 22 may be set to 2,3, 4, 5, 6 or more, and specific local divisions are set according to actual production requirements, which will not be described in detail herein.
The invention is further illustrated by the following examples.
Example 1
As shown in fig. 6 and 8, performing initial photoresist removing ashing rate detection to obtain the first photoresist removing ashing rate value F1 of the central area 21 of the wafer and the second photoresist removing ashing rate value F2 of the peripheral area 22 of the wafer;
When the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 meet the condition that F1> F2, controlling the gas transmission component to provide reaction gas for the peripheral area 22 of the wafer so as to improve the photoresist stripping rate of the peripheral area 22 of the wafer;
When the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 meet F1< F2, the gas transmission component is controlled to provide inert gas for the peripheral area 22 of the wafer so as to reduce the photoresist stripping rate of the peripheral area 22 of the wafer.
Example two
In this embodiment, the wafer 200 is divided into a central area 21 and a plurality of peripheral areas, specifically, as shown in fig. 7, taking 4 peripheral areas as an example, a first peripheral area 221, a second peripheral area 222, a third peripheral area 223 and a fourth peripheral area 224.
The first wafer peripheral area 221 corresponds to one of the gas channels, such as a first gas channel, the second wafer peripheral area 222 corresponds to one of the gas channels, such as a second gas channel, the third wafer peripheral area 223 corresponds to one of the gas channels, such as a third gas channel, the fourth wafer peripheral area 224 corresponds to one of the gas channels, such as a fourth gas channel, and the four gas channels are all independently arranged and independently adjustable, and can be filled with inert gas or reactive gas, and the gas flow rate can also be independently adjustable.
Performing initial photoresist removing and ashing rate detection to obtain a first photoresist removing and ashing rate value F1 of the wafer center area 21, a photoresist removing and ashing rate value F1 of the first wafer peripheral area 221, a photoresist removing and ashing rate value F2 of the second wafer peripheral area 222, a photoresist removing and ashing rate value F3 of the third wafer peripheral area 223, and a photoresist removing and ashing rate value F4 of the fourth wafer peripheral area 224.
For example, when the photoresist stripping rate value F1 of the first wafer peripheral area 221, the photoresist stripping rate value F2 of the second wafer peripheral area 222, the photoresist stripping rate value F3 of the third wafer peripheral area 223, and the photoresist stripping rate value F4 of the fourth wafer peripheral area 224 are all greater than the first photoresist stripping rate value F1 of the wafer central area 21, four corresponding gas channels are respectively controlled to introduce inert gas into the first wafer peripheral area 221, the second wafer peripheral area 222, the third wafer peripheral area 223, and the fourth wafer peripheral area 224, wherein the specific gas flow rate can be adjusted according to the difference between the photoresist stripping rate values of the four wafer peripheral areas and the first photoresist stripping rate value F1, which will not be repeated herein.
For another example, when the photoresist stripping rate value F1 of the first wafer peripheral area 221, the photoresist stripping rate value F2 of the second wafer peripheral area 222, the photoresist stripping rate value F3 of the third wafer peripheral area 223, and the photoresist stripping rate value F4 of the fourth wafer peripheral area 224 are smaller than the first photoresist stripping rate value F1 of the wafer central area 21, the corresponding four gas channels are controlled to respectively introduce the reactive gas into the first wafer peripheral area 221, the second wafer peripheral area 222, the third wafer peripheral area 223, and the fourth wafer peripheral area 224, wherein the specific gas flow rate can be adjusted according to the difference between the photoresist stripping rate values of the four wafer peripheral areas and the first photoresist stripping rate value F1, which will not be described again.
For another example, when the photoresist removing rate F1 of the first peripheral area 221 is greater than the first photoresist removing rate F1 of the central area 21, the photoresist removing rate F2 of the second peripheral area 222 is equal to the first photoresist removing rate F1 of the central area 21, and the photoresist removing rates F3 of the third peripheral area 223 and the photoresist removing rate F4 of the fourth peripheral area 224 are both smaller than the first photoresist removing rate F1 of the central area 21, the four corresponding gas channels are controlled respectively, so that the first peripheral area 221 is filled with inert gas, the second peripheral area 222 is not filled with any gas, and the photoresist removing rates of the four peripheral areas are adjusted respectively until the photoresist removing rates of the four peripheral areas are consistent with the first peripheral area 21.
It should be noted that, the values of the ashing reaction rates of the peripheral areas of the wafer and the value F1 of the first ashing reaction rate of the central area 21 of the wafer may be changed at any time in actual situations, that is, real-time monitoring and real-time regulation of the ashing reaction rates of different areas on the wafer 200 are required, and the actual situations include, but are not limited to, the above embodiments, and are not repeated here.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.

Claims (8)

1. An ion filter device is characterized by comprising a first filter element, a gas transmission assembly and a second filter element;
The first filter piece and the second filter piece are respectively arranged at two sides of the gas transmission assembly;
The gas transmission component is used for providing reaction gas or inert gas for the periphery of the wafer so as to adjust the photoresist stripping and ashing rate of the periphery of the wafer;
The gas transmission assembly comprises a gas transmission piece and a gas supply pipeline, wherein the gas transmission piece is of an annular structure, a plurality of independent circular arc-shaped gas channels are further arranged on the gas transmission piece, the gas transmission piece comprises an inner wall, an outer wall and gas outlet holes, the gas outlet holes are formed in the inner wall and are communicated with the gas channels, and the gas supply pipeline is arranged in the outer wall and is communicated with the gas channels.
2. The ion filter device of claim 1, wherein the ion filter device comprises a filter element,
The first filter piece is provided with a plurality of first filter holes which are uniformly distributed on the first filter piece;
The second filter piece is provided with a plurality of second filter holes, the second filter holes are uniformly distributed on the second filter piece, and the first filter holes and the second filter holes are staggered along the first direction.
3. A method of controlling photoresist stripping ash rate uniformity using the ion filter apparatus of any one of claims 1-2, said method comprising the steps of:
Detecting initial photoresist removing ashing rate to obtain a first photoresist removing ashing rate value F1 of a central area of the wafer and a second photoresist removing ashing rate value F2 of a peripheral area of the wafer;
And controlling a gas transmission component to provide reaction gas or inert gas for the peripheral area of the wafer based on the first photoresist stripping rate value F1 and the second photoresist stripping rate value F2 so as to adjust the photoresist stripping rate of the peripheral area of the wafer to be consistent with the photoresist stripping rate of the central area of the wafer.
4. A method of controlling photoresist stripping ash rate uniformity according to claim 3, further comprising the steps of:
When the first photoresist stripping rate value F1 is larger than the second photoresist stripping rate value F2, controlling the gas transmission assembly to provide reaction gas for the peripheral area of the wafer so as to improve the photoresist stripping rate of the peripheral area of the wafer;
When the first photoresist stripping rate value F1 is smaller than the second photoresist stripping rate value F2, controlling the gas transmission component to provide inert gas for the peripheral area of the wafer so as to reduce the photoresist stripping rate of the peripheral area of the wafer.
5. A method of controlling photoresist stripping ash rate uniformity according to claim 3, further comprising the steps of:
dividing the peripheral area of the wafer into a plurality of parts, wherein the plurality of parts of peripheral area of the wafer are arranged in one-to-one correspondence with the gas channels;
Detecting the initial photoresist removing ashing rate of the wafer to obtain a plurality of parts of third photoresist removing ashing rate values fn of the peripheral area of the wafer;
When the third photoresist removing ashing rate value fn is different from the first photoresist removing ashing rate value F1, adjusting the gas in the corresponding gas channel to independently control the third photoresist removing ashing rate value fn of the peripheral area of the wafer to be consistent with the first photoresist removing ashing rate value F1.
6. The method of controlling photoresist stripping ash rate uniformity according to claim 5, further comprising the steps of:
When the third photoresist stripping rate value fn is larger than the first photoresist stripping rate value F1, controlling the gas transmission assembly to provide inert gas for the peripheral area of the wafer, and independently adjusting the gas transmission assembly according to the third photoresist stripping rate value fn to control the gas flow of the inert gas so as to keep all the third photoresist stripping rate values fn consistent with the first photoresist stripping rate value F1.
7. The method of controlling photoresist stripping ash rate uniformity according to claim 5, further comprising the steps of:
When the third photoresist stripping rate value fn is smaller than the first photoresist stripping rate value F1, controlling the gas transmission component to provide reaction gas for the peripheral area of the wafer, and independently adjusting the gas transmission component according to the third photoresist stripping rate value fn to control the gas flow of the reaction gas so as to keep all the third photoresist stripping rate value fn consistent with the first photoresist stripping rate value F1.
8. The method of controlling photoresist stripping ash rate uniformity according to claim 5, further comprising the steps of:
when a part of the third photoresist removing ashing rate value fn is smaller than the first photoresist removing ashing rate value F1 and another part of the third photoresist removing ashing rate value fn is larger than the first photoresist removing ashing rate value F1, controlling a part of the gas transmission component to provide reaction gas for the peripheral area of the wafer with the third photoresist removing ashing rate value fn smaller than the first photoresist removing ashing rate value F1, controlling another part of the gas transmission component to provide inert gas for the peripheral area of the wafer with the third photoresist removing ashing rate value fn larger than the first photoresist removing ashing rate value F1, and independently adjusting the gas transmission component according to the photoresist removing ashing rate value fn of the peripheral area of the wafer so as to control the gas flow of the reaction gas or the inert gas, so that all the photoresist removing ashing rate values fn are consistent with the first photoresist removing ashing rate value F1.
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