CN113205995B - Gas distribution device, plasma processing device, method and semiconductor structure - Google Patents
Gas distribution device, plasma processing device, method and semiconductor structure Download PDFInfo
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- CN113205995B CN113205995B CN202110499351.1A CN202110499351A CN113205995B CN 113205995 B CN113205995 B CN 113205995B CN 202110499351 A CN202110499351 A CN 202110499351A CN 113205995 B CN113205995 B CN 113205995B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention relates to a gas distribution device, a plasma processing method and a semiconductor structure, wherein the gas distribution device comprises a flow divider, a plurality of main gas transmission pipelines, a plurality of auxiliary gas transmission pipelines and a spray head, and the spray head comprises a plurality of gas distribution areas which are mutually independent; the flow divider is provided with a plurality of outlets which are arranged in one-to-one correspondence with the gas distribution areas, and the inlet of the flow divider is connected with the first process gas; each main gas transmission pipeline is arranged in one-to-one correspondence with each outlet, and each outlet is communicated with each gas distribution area through the corresponding main gas transmission pipeline; the inlet of the auxiliary gas transmission pipeline is connected with the second process gas, and the outlet of the auxiliary gas transmission pipeline is communicated with the corresponding main gas transmission pipeline in an airtight manner; the controllable valve is arranged on the auxiliary gas pipeline. The gas concentration compensation device can control the corresponding auxiliary gas transmission pipeline by controlling the controllable valve in a targeted manner, compensates the gas concentration of a gas distribution area needing to be compensated, and improves the yield of manufactured semiconductor products.
Description
Technical Field
The present invention relates to the field of plasma processing technology, and more particularly, to a gas distribution device, a plasma processing method, and a semiconductor structure.
Background
In a semiconductor device manufacturing process, a reaction gas needs to be ionized to generate a plasma, so that the plasma can be used for etching a film layer on the surface of a wafer in a processing chamber. In the plasma etching process, process gas provided by a gas source in a gas distribution device of a semiconductor etching machine flows out from a gas pipeline, is collected in a gas splitter, is split according to a proportioning mode set by a process menu, and is diffused to the surface of a wafer through different areas divided by a gas diffuser.
However, in the conventional semiconductor etching machine, since the gas distribution in different areas can only be uniformly controlled by the splitter, if the etching line diameter of a certain area on the surface of the wafer is abnormal, the gas splitting ratio in the process menu needs to be reset to uniformly adjust the gas ratio in each area, and the reset process menu still may cause uneven gas distribution on the surface of the wafer, which causes uneven line diameter and wafer defects, affects the product yield, and causes property loss of companies.
Disclosure of Invention
Accordingly, there is a need to provide a gas distribution device, a plasma processing method, and a semiconductor structure, which can compensate for the uneven distribution of the gas controlled by the flow divider without readjusting the gas ratio of the flow divider through an auxiliary gas pipeline, so as to ensure that the etching rate of each region is substantially the same, and the etching line diameter of the wafer surface is more stable, thereby effectively improving the yield of semiconductor products.
To achieve the above and other related objects, an aspect of the present application provides a gas distribution apparatus including a flow divider, a main gas pipe, an auxiliary gas pipe, and a showerhead including a plurality of gas distribution regions independent of each other; the flow divider is provided with a plurality of outlets which are arranged in one-to-one correspondence with the gas distribution areas, and the inlet of the flow divider is connected with the first process gas; a plurality of main gas transmission pipelines which are arranged corresponding to the outlets one by one, and the outlets are respectively communicated with the gas distribution areas through the corresponding main gas transmission pipelines; the inlets of the auxiliary gas pipelines are connected with second process gas, and the outlets of the auxiliary gas pipelines are communicated with the corresponding interiors of the main gas pipelines in an airtight manner; the controllable valves are arranged on the auxiliary gas transmission pipelines and used for controlling the communication state of the auxiliary gas transmission pipelines and the main gas transmission pipelines connected with the auxiliary gas transmission pipelines.
In the gas distribution apparatus of the above embodiment, after the first process gas provided by the gas source is collected in the splitter, the splitter delivers the first process gas to a plurality of mutually independent gas distribution regions of the showerhead through a plurality of main gas delivery pipes; the inlets of a plurality of auxiliary gas transmission pipelines are connected with the second process gas, the outlets of the auxiliary gas transmission pipelines are communicated with the inner part of the corresponding main gas transmission pipeline in an airtight manner, and the auxiliary gas transmission pipelines are provided with controllable valves for controlling the communication state of the auxiliary gas transmission pipelines and the connected main gas transmission pipelines so as to control the second process gas to flow to the corresponding gas distribution areas through the corresponding auxiliary gas transmission pipelines. When the first process gas provided by the gas source of the semiconductor etching machine is distributed unevenly to the gas distribution areas of the spray head through the flow divider and the main gas transmission pipelines, the gas distribution ratio in the process menu does not need to be reset, the corresponding auxiliary gas transmission pipelines can be controlled through the controllable valves to compensate, the etching rates of the wafer surface areas respectively corresponding to the gas distribution areas are approximately the same, the etching line diameter of the wafer surface is more stable, and the yield of semiconductor products is effectively improved. The corresponding auxiliary gas transmission pipeline can be controlled by controlling the controllable valve in a targeted manner, so that the gas concentration of a gas distribution area needing compensation is accurately compensated, the efficiency of controlling the process gas transmission can be improved under the condition of ensuring the consistency of the etching rates of different areas, and the yield of manufactured semiconductor products is improved.
In one embodiment of the present application, the number of the auxiliary gas transmission pipelines is equal to the number of the main gas transmission pipelines, and each of the auxiliary gas transmission pipelines is arranged in one-to-one correspondence with each of the main gas transmission pipelines.
In one embodiment of the present application, the number of the controllable valves is equal to the number of the auxiliary gas transmission pipelines, and each controllable valve is arranged in one-to-one correspondence with each auxiliary gas transmission pipeline.
In one embodiment of the application, the controllable valve comprises a solenoid valve.
In one embodiment of the present application, the showerhead includes a clamping plate, a first electrode plate and a plurality of gaskets, the first electrode plate is disposed on a lower surface of the clamping plate; the gasket is disposed between the clamping plate and the first electrode plate, and is used for isolating the showerhead into a plurality of gas distribution regions independent of each other.
In one embodiment of the present application, an even number of first gas injection holes are formed through the upper and lower surfaces of the clamping plate, and the clamping plate portion corresponding to each gas distribution area includes at least one first gas injection hole; an even number of second gas injection holes penetrating through the upper surface and the lower surface of the first electrode plate are formed in the first electrode plate, and the portion, corresponding to each gas distribution area, of the first electrode plate at least comprises one second gas injection hole.
In one embodiment of the present application, the shape of the spray head is circular; the nozzle sequentially comprises a first gas distribution area, a second gas distribution area and a third gas distribution area from the circle center to the circumference, wherein the first gas distribution area is circular, and the second gas distribution area and the third gas distribution area are both circular.
In one embodiment of the present application, the gas distribution apparatus further comprises a controller electrically connected to each of the controllable valves for adjusting the gas concentration in each of the gas distribution regions by controlling the on-off state of each of the controllable valves.
In one embodiment of the present application, the gas distribution device further comprises a detection device electrically connected to the controller for detecting the gas concentration in the gas distribution area corresponding to the controllable valve; the controller is configured to:
and if the gas concentration is less than or equal to a first preset threshold value, controlling the controllable valve to act and conducting the auxiliary gas pipeline.
In one embodiment of the present application, the gas distribution device further comprises an alarm device electrically connected to the controller; the controller is configured to:
and if the gas concentration is greater than or equal to a second preset threshold value, controlling the alarm device to send alarm information, wherein the second preset threshold value is greater than the first preset threshold value.
In one embodiment of the present application, the second process gas is the same or different than the first process gas.
Another aspect of the present application provides a plasma processing apparatus for generating plasma to process a substrate, including the gas distribution device and the processing chamber described in any of the embodiments of the present application, wherein the first process gas and/or the second process gas flows into the processing chamber through the gas distribution device, a plasma is formed in the processing chamber, and the substrate to be etched in the processing chamber is etched.
In the plasma processing apparatus in the above embodiment, after the first process gas is collected to the flow divider by setting the gas distribution ratio in the process menu, the flow divider delivers the first process gas to a plurality of mutually independent gas distribution regions of the showerhead through a plurality of main gas delivery pipes; when the first process gas provided by the gas source is uneven in gas distribution provided by the splitter and the main gas transmission pipelines to the gas distribution areas of the spray head, the gas splitting ratio in the process menu does not need to be reset, the corresponding auxiliary gas transmission pipelines can be controlled by the controllable valves to compensate, the etching rates of the wafer surface areas corresponding to the gas distribution areas are approximately the same, the etching line diameter of the wafer surface is more stable, and the yield of semiconductor products is effectively improved. The corresponding auxiliary gas transmission pipeline can be controlled by controlling the controllable valve in a targeted manner, so that the gas concentration of a gas distribution area needing compensation is accurately compensated, the efficiency of controlling the process gas transmission can be improved under the condition of ensuring the consistency of the etching rates of different areas, and the yield of manufactured semiconductor products is improved.
In one embodiment of the present application, the second process gas is the same or different than the first process gas.
Another aspect of the present application provides a plasma processing method, including using the plasma processing apparatus described in any of the embodiments of the present application to generate plasma to perform etching processing on a substrate to be etched, and controlling each of the controllable valves to operate so that a gas concentration in each of the gas distribution regions is within a corresponding predetermined gas concentration range. In the embodiment, the corresponding auxiliary gas transmission pipeline can be controlled by pertinently controlling the controllable valve, the gas concentration of the gas distribution area needing to be compensated is accurately compensated, the efficiency of controlling the process gas transmission can be improved under the condition of ensuring the consistency of the etching rates of different areas, and the yield of manufactured semiconductor products is improved.
In another aspect, the present application provides a semiconductor structure, which is etched by using the plasma processing method described in any of the embodiments of the present application. Compared with a semiconductor structure which is etched by adopting a traditional semiconductor etching machine, the semiconductor structure provided by the embodiment has higher product yield.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain drawings of other embodiments based on these drawings without any creative effort.
FIG. 1 is a schematic view of a gas distribution device according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of a gas distribution device according to another embodiment of the present application;
FIG. 3 is a schematic circuit diagram of a gas distribution apparatus provided in an embodiment of the present application;
FIG. 4 is a schematic diagram of an electrical circuit of a gas distribution apparatus provided in another embodiment of the present application;
FIG. 5 is a schematic circuit diagram of a gas distribution apparatus provided in another embodiment of the present application;
FIG. 6 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present application;
FIG. 7a is a schematic view of a wafer surface etching line diameter obtained by etching with a conventional semiconductor etching machine;
FIG. 7b is a schematic view of the etched line diameter of the wafer surface etched by the semiconductor etching machine shown in FIG. 6;
FIG. 7c is a schematic structural diagram of a wafer etched by a conventional semiconductor etching apparatus;
FIG. 7d is a schematic structural diagram of a wafer etched by the semiconductor etching apparatus shown in FIG. 6;
description of reference numerals:
100. a gas distribution device; 10. a flow divider; 20. a main gas transmission pipeline; 20a, a first main gas transmission pipeline; 20b, a second main gas pipeline; 20c, a third main gas pipeline; 30. an auxiliary gas pipeline; 30a, a first subsidiary gas pipeline; 30b, a second auxiliary gas pipeline; 30c, a third auxiliary gas pipeline; 40. a controllable valve; 40a, a first controllable valve; 40b, a second controllable valve; 40c, a third controllable valve; 50. a spray head; 51. a gas distribution region; 51a, a first gas distribution area; 51b, a second gas distribution area; 51c, a third gas distribution area; 52. a splint; 53. a first electrode plate; 54. a gasket; 54a, a first gasket; 54b, a second gasket; 54c, a third gasket; 521. a first gas injection hole; 531. a second gas injection hole; 60. a controller; 70. a detection device; 80. an alarm device; 90. a processing chamber; 200. a substrate to be etched; 201. an over-etched region; 202. and etching the insufficient area.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Where the terms "comprising," "having," and "including" are used herein, another element may be added unless an explicit limitation is used, such as "only," "consisting of … …," etc. Unless mentioned to the contrary, terms in the singular may include the plural and are not to be construed as being one in number.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.
In the description of the present application, it is to be understood that the terms "central axis", "length", "width", "up", "down", "horizontal", "inner", "outer", "axial", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1, in one embodiment of the present application, a gas distribution apparatus 100 is provided, which includes a flow divider 10, a main gas pipe 20, a plurality of auxiliary gas pipes 30, a plurality of controllable valves 40, and a showerhead 50, wherein the showerhead 50 includes a plurality of gas distribution regions 51 independent of each other; the flow divider 10 has a plurality of outlets provided in one-to-one correspondence with the respective Gas distribution regions 51, and an inlet of the flow divider 10 is connected to the first process Gas 1; the main gas transmission pipelines 20 are arranged corresponding to the outlets of the flow splitters 10 one by one, and the outlets of the flow splitters 10 are respectively communicated with the gas distribution areas 51 through the corresponding main gas transmission pipelines 20; the inlet of each subsidiary Gas transmission pipeline 30 is connected with the second process Gas2, and the outlet of each subsidiary Gas transmission pipeline 30 is in airtight communication with the inside of the corresponding main Gas transmission pipeline 20; each of the controllable valves 40 is disposed on an outer wall surface of the subsidiary gas transmission pipes 30, respectively, for controlling a communication state of the corresponding connected subsidiary gas transmission pipe 30 with the connected main gas transmission pipe 20. In one embodiment of the present application, the second process Gas2 may be the same as or different from the first process Gas 1.
By way of example, in one embodiment of the present application, the number of the auxiliary gas transmission pipelines 30 is equal to the number of the main gas transmission pipelines 20, and each of the auxiliary gas transmission pipelines 30 is provided in one-to-one correspondence with each of the main gas transmission pipelines 20.
By way of example, in one embodiment of the present application, the number of controllable valves 40 is equal to the number of auxiliary gas transmission lines 30, and each controllable valve 40 is provided in one-to-one correspondence with each auxiliary gas transmission line 30 to achieve compensation control of the gas concentration of each gas distribution area 51.
With continued reference to fig. 1, after the first process Gas1 provided by the Gas source is collected in the flow divider 10, the flow divider 10 delivers the first process Gas1 to a plurality of mutually independent Gas distribution regions 51 of the showerhead 50 through a plurality of main Gas delivery pipes 20; the main gas transmission pipeline 20 comprises a first main gas transmission pipeline 20a, a second main gas transmission pipeline 20b and a third main gas transmission pipeline 20c, and inlets of the first main gas transmission pipeline 20a, the second main gas transmission pipeline 20b and the third main gas transmission pipeline 20c are communicated with the interior of the flow divider 10; the auxiliary gas transmission pipeline 30 may include a first auxiliary gas transmission pipeline 30a, a second auxiliary gas transmission pipeline 30b and a third auxiliary gas transmission pipeline 30c, the controllable valve 40 includes a first controllable valve 40a, a second controllable valve 40b and a third controllable valve 40c, and the first controllable valve 40a, the second controllable valve 40b and the third controllable valve 40c may include electromagnetic valves, respectively; inlets of the first auxiliary Gas transmission pipeline 30a, the second auxiliary Gas transmission pipeline 30b and the third auxiliary Gas transmission pipeline 30c are all connected with the second process Gas Gas2, an outlet of the first auxiliary Gas transmission pipeline 30a is in airtight communication with the interior of the corresponding first main Gas transmission pipeline 20a, an outlet of the second auxiliary Gas transmission pipeline 30b is in airtight communication with the interior of the corresponding second main Gas transmission pipeline 20b, and an outlet of the third auxiliary Gas transmission pipeline 30c is in airtight communication with the interior of the corresponding third main Gas transmission pipeline 20 c; the gas distribution region 51 includes a first gas distribution region 51a, a second gas distribution region 51b and a third gas distribution region 51C, wherein the first gas distribution region 51a may correspond to a central region C of the surface of the wafer to be etched, the second gas distribution region 51b may correspond to a central region M of the surface of the wafer to be etched, and the third gas distribution region 51C may correspond to an edge region E of the surface of the wafer to be etched; the outlet of the first main gas transmission pipe 20a is communicated with the first gas distribution area 51a, the outlet of the second main gas transmission pipe 20b is communicated with the second gas distribution area 51b, and the outlet of the third main gas transmission pipe 20c is communicated with the third gas distribution area 51 c; a first controllable valve 40a may be disposed on an outer wall surface of the first subsidiary gas transmission pipeline 30a for controlling a communication state of the first subsidiary gas transmission pipeline 30a with the connected first main gas transmission pipeline 20 a; a second controllable valve 40b may be disposed on an outer wall surface of the second subsidiary gas transmission pipeline 30b for controlling a communication state of the second subsidiary gas transmission pipeline 30b with the connected second main gas transmission pipeline 20 b; a third controllable valve 40c may be provided on an outer wall surface of the third subsidiary gas transmission duct 30c for controlling a communication state of the third subsidiary gas transmission duct 30c with the connected third main gas transmission duct 20 c. When the first process Gas1 provided by the Gas source of the semiconductor etching machine passes through the flow divider 10, the first main Gas transmission pipeline 20a, the second main Gas transmission pipeline 20b and the third main Gas transmission pipeline 20c and the Gas distribution provided by the first Gas distribution area 51a, the second Gas distribution area 51b and the third Gas distribution area 51c of the showerhead 50 is not uniform, the Gas distribution ratio in the process menu does not need to be reset, the controllable valve 40 can be controlled to control the corresponding auxiliary Gas transmission pipeline 30 to provide the second process Gas2 for compensation, so as to ensure that the etching rates of the wafer surface areas respectively corresponding to the plurality of Gas distribution areas 51 are approximately the same, so that the etching line diameter of the wafer surface is more stable, thereby effectively improving the yield of semiconductor products. The controllable valve 40 can be controlled in a targeted manner to control the corresponding auxiliary gas transmission pipeline 30, so that the gas concentration of the gas distribution area 51 needing compensation is accurately compensated, the efficiency of controlling the process gas transmission can be improved under the condition of ensuring the consistency of the etching rates of different areas, and the yield of manufactured semiconductor products can be improved.
Referring to fig. 2, in an embodiment of the present application, the showerhead 50 includes a clamping plate 52, a first electrode plate 53 and a plurality of washers 54, the washers 54 include a first washer 54a, a second washer 54b and a third washer 54c, the first electrode plate 53 is disposed on a lower surface of the clamping plate 52; the first, second and third gaskets 54a, 54b and 54C are disposed between the clamping plate 52 and the first electrode plate 53, and are used for isolating the showerhead 50 into a plurality of gas distribution regions 51 independent of each other, and the gas distribution regions 51 may include a first gas distribution region 51a, a second gas distribution region 51b and a third gas distribution region 51C, wherein the first gas distribution region 51a may correspond to a central region C of the surface of the wafer to be etched, the second gas distribution region 51b may correspond to a central region M of the surface of the wafer to be etched, and the third gas distribution region 51C may correspond to an edge region E of the surface of the wafer to be etched; the outlet of the first main gas delivery conduit 20a communicates with the first gas distribution area 51a, the outlet of the second main gas delivery conduit 20b communicates with the second gas distribution area 51b, and the outlet of the third main gas delivery conduit 20c communicates with the third gas distribution area 51 c. The material of the first electrode plate 53 can be selected from monocrystalline silicon, polycrystalline silicon, silicon carbide or other suitable materials. For example, the material of first electrode plate 53 can be provided as single crystal silicon, which can minimize wafer contamination during plasma processing because it introduces only a minimal amount of undesirable elements into the process chamber during plasma processing. The chuck plate 52 is made of a material that is chemically compatible with the process gases used to process semiconductor substrates in the plasma processing chamber, has a coefficient of thermal expansion that closely matches the coefficient of the material of the first electrode plate 53, and/or is electrically and thermally conductive, and the chuck plate 52 is made of a material that includes, but is not limited to, graphite, silicon carbide, aluminum, or other suitable material. The first gasket 54a, the second gasket 54b and the third gasket 54C may be C-type 0-Ring sealing rings, and the material thereof may be corrosion-resistant teflon sealing rings, or other suitable sealing rings, which are not limited thereto.
With continued reference to fig. 2, in one embodiment of the present application, an even number of first gas injection holes 521 are formed on the clamping plate 52 and penetrate through the upper surface and the lower surface of the clamping plate, and the portion of the clamping plate 52 corresponding to each gas distribution area 51 at least includes one first gas injection hole 521; the first electrode plate 53 is provided with an even number of second gas injection holes 531 penetrating the upper and lower surfaces thereof, and a portion of the first electrode plate 53 corresponding to each gas distribution region 51 includes at least one second gas injection hole 531.
By way of example, with continued reference to FIG. 2, the first gas injection holes 521 in the clamping plate 52 are positioned and numbered to correspond to the second gas injection holes 531 in the first electrode plate 53. In other embodiments of the present application, the positions and the number of the first gas injection holes 521 on the clamping plate 52 may not completely correspond to the number of the second gas injection holes 531 on the first electrode plate 53, for example, the number of the first gas injection holes 521 on the clamping plate 52 may be set to be smaller than the number of the second gas injection holes 531 on the first electrode plate 53.
By way of example, with continued reference to FIG. 2, in one embodiment of the present application, the spray head 50 is circular in shape; the showerhead 50 sequentially includes a first gas distribution area 51a, a second gas distribution area 51b and a third gas distribution area 51c from the circle center to the circumference, wherein the first gas distribution area 51a is circular, and the second gas distribution area 51b and the third gas distribution area 51 are both circular. It should be noted that the number of the gas distribution areas 51 of the showerhead 50 may be more than 3, and may be specifically set according to actual situations.
As an example, referring to fig. 3, in an embodiment of the present application, the gas distribution apparatus 100 further includes a controller 60, the controller 60 is electrically connected to each controllable valve 40 for adjusting the gas concentration in each gas distribution area 51 by controlling the on/off state of each controllable valve 40, wherein the controllable valves 40 may include a first controllable valve 40a, a second controllable valve 40b and a third controllable valve 40C, and the gas distribution areas 51 may include a first gas distribution area 51a, a second gas distribution area 51b and a third gas distribution area 51C, wherein the first gas distribution area 51a may correspond to a central area C of the surface of the wafer to be etched, the second gas distribution area 51b may correspond to a central area M of the surface of the wafer to be etched, and the third gas distribution area 51C may correspond to an edge area E of the surface of the wafer to be etched. For example, if the line diameter of the middle region M of the wafer surface is found to be smaller through monitoring, the controller 60 may control the second controllable valve 40b to operate so that the second auxiliary Gas transmission pipe 30b is communicated with the second main Gas transmission pipe 20b, and the second process Gas2 flows to the second Gas distribution region 51b through the second auxiliary Gas transmission pipe 30b and the second main Gas transmission pipe 20b, so as to perform Gas concentration compensation control in a targeted manner, thereby ensuring the uniformity of the Gas concentrations in the three Gas distribution regions 51, i.e., the first Gas distribution region 51a, the second Gas distribution region 51b, and the third Gas distribution region 51 c.
By way of example, referring to fig. 4, in one embodiment of the present application, the gas distribution apparatus 100 further comprises a detection device 70, wherein the detection device 70 is electrically connected to the controller 60 for detecting the gas concentration in the gas distribution area 51 corresponding to the controllable valve 40; the controller 60 is configured to: if the gas concentration is less than or equal to the corresponding first preset threshold, the controllable valve 40 is controlled to operate and conduct the corresponding auxiliary gas transmission pipeline 30. For example, the detecting device 70 may include a first detecting device 70a, a second detecting device 70b and a third detecting device 70c, wherein the first detecting device 70a is disposed in the first gas distribution area 51a, the second detecting device 70b is disposed in the second gas distribution area 51b, and the third detecting device 70c is disposed in the third gas distribution area 51 c. If the Gas concentration of the first Gas distribution area 51a obtained by the first detection device 70a is less than or equal to the corresponding first preset threshold, the first controllable valve 40a is controlled to operate and conduct the corresponding first auxiliary Gas transmission pipeline 30a, so that the second process Gas2 flows to the first Gas distribution area 51a through the first auxiliary Gas transmission pipeline 30a and the first main Gas transmission pipeline 20a, and the Gas concentration compensation control is performed in a targeted manner, thereby ensuring the Gas concentration uniformity of the three Gas distribution areas 51, namely the first Gas distribution area 51a, the second Gas distribution area 51b and the third Gas distribution area 51 c.
By way of example, referring to fig. 5, in one embodiment of the present application, the gas distribution apparatus 100 further comprises an alarm device 80, the alarm device 80 being electrically connected to the controller 60; the controller 60 is configured to: and if the gas concentration is greater than or equal to a corresponding second preset threshold, controlling the alarm device 80 to send alarm information, wherein the second preset threshold is greater than the first preset threshold. For example, if the gas concentration of the first gas distribution area 51a obtained by the first detection device 70a is greater than or equal to the corresponding second preset threshold, the alarm device 80 is controlled to send out alarm information, for example, the alarm device 80 may be controlled to send out a sound of an alarm prompt, or an alarm window is popped up in a human-computer interaction interface, or an alarm lamp is controlled to send out alarm light, or an alarm prompt short message is sent, or a combination of multiple alarm modes is adopted, so as to prompt relevant workers to take timely measures, thereby avoiding unnecessary economic loss.
Referring to fig. 6, in one embodiment of the present application, a plasma processing apparatus for generating plasma to process a substrate is provided, which includes a Gas distribution device 100 and a processing chamber 90 as described in any of the embodiments of the present application, wherein a first process Gas1 and/or a second process Gas2 flows into the processing chamber 90 through the Gas distribution device 100, plasma is formed in the processing chamber 90, and a substrate 200 to be etched in the processing chamber 90 is etched.
For example, referring to fig. 6 and 7 a-7 d, after the first process gas is collected in the flow divider 10 by setting the gas distribution ratio in the process menu, the flow divider 10 delivers the first process gas to a plurality of mutually independent gas distribution regions 51 of the showerhead 50 through a plurality of main gas delivery pipes 20; when the first process Gas1 provided by the Gas source is distributed unevenly to the plurality of Gas distribution regions 51 of the showerhead 50 through the splitter 10 and the plurality of main Gas transmission pipes 20, the Gas distribution ratio in the process menu does not need to be reset, the corresponding auxiliary Gas transmission pipe 30 can be controlled to provide the second process Gas2 for compensation by controlling the controllable valve 40, so as to ensure that the etching rates of the wafer surface regions respectively corresponding to the plurality of Gas distribution regions 51 are approximately the same, so that the etching line diameter of the wafer surface is more stable, thereby effectively improving the yield of semiconductor products, wherein the second process Gas2 may be the same as or different from the first process Gas 1. For example, if the line diameter of the middle region M on the wafer surface is found to be smaller by monitoring (as shown in fig. 7 a), if the compensation is not performed through the auxiliary gas transmission pipeline 30, after the gas distribution ratio of the gas distribution regions 51 is adjusted uniformly and the gas distribution ratio of the process recipe is reset for a plurality of times, the obtained wafer is obviously found to have the over-etched region 201 and the under-etched region 202 as shown in fig. 7 c. According to the technical solution provided by the present application, the controller 60 controls the second controllable valve 40b to operate and enable the second auxiliary Gas transmission pipe 30b and the second main Gas transmission pipe 20b to communicate, the second process Gas2 flows to the second Gas distribution area 51b through the second auxiliary Gas transmission pipe 30b and the second main Gas transmission pipe 20b to perform Gas concentration compensation control in a targeted manner, the line diameter diagrams of the first Gas distribution area 51a, the second Gas distribution area 51b and the third Gas distribution area 51c after compensation are shown in fig. 7b, and the obtained wafer is obviously found as shown in fig. 7d, the line diameters of the first Gas distribution area 51a, the second Gas distribution area 51b and the third Gas distribution area 51c in fig. 7b are relatively uniform, and the wafer in fig. 7d does not have an over-etched area 201 or an under-etched area 202. Therefore, the corresponding auxiliary gas transmission pipeline 30 is controlled by pertinently controlling the controllable valve 40, the gas concentration of the gas distribution area 51 needing compensation is accurately compensated, the efficiency of controlling the process gas transmission is improved under the condition of ensuring the consistency of the etching rates of different areas, and the yield of manufactured semiconductor products is improved.
In an embodiment of the present application, a plasma processing method is provided, which includes generating plasma by using the plasma processing apparatus described in any of the embodiments of the present application, so as to etch a substrate 200 to be etched, and controlling the operation of each controllable valve 40, so that the gas concentration in each gas distribution region 51 is within a corresponding preset gas concentration range. In this embodiment, the controllable valve 40 can be controlled in a targeted manner to control the corresponding auxiliary gas transmission pipeline 30, so as to precisely compensate the gas concentration of the gas distribution region 51 to be compensated, and thus, the efficiency of controlling the process gas transmission can be improved and the yield of the manufactured semiconductor product can be improved while the consistency of the etching rates of different regions is ensured.
In one embodiment of the present application, a semiconductor structure is provided, and an etching process is performed by using the plasma processing method described in any of the embodiments of the present application. Compared with a semiconductor structure which is etched by adopting a traditional semiconductor etching machine, the semiconductor structure provided by the embodiment has higher product yield.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (13)
1. A gas distribution apparatus, comprising:
a showerhead including a plurality of gas distribution regions independent of each other;
a flow splitter having a plurality of outlets disposed in one-to-one correspondence with each of the gas distribution zones, and an inlet of the flow splitter connected to a first process gas;
a plurality of main gas transmission pipelines which are arranged corresponding to the outlets one by one, and the outlets are respectively communicated with the gas distribution areas through the corresponding main gas transmission pipelines;
the inlets of the auxiliary gas pipelines are connected with second process gas, and the outlets of the auxiliary gas pipelines are communicated with the corresponding interiors of the main gas pipelines in an airtight manner;
the controllable valves are arranged on the auxiliary gas transmission pipelines and used for controlling the communication state of the auxiliary gas transmission pipelines and the main gas transmission pipelines connected with the auxiliary gas transmission pipelines;
a controller electrically connected to each of the controllable valves for adjusting a concentration of the gas in each of the gas distribution zones by controlling an on-off state of each of the controllable valves;
the detection device is electrically connected with the controller and is used for detecting the gas concentration in the gas distribution area corresponding to the controllable valve;
the controller is configured to:
and if the gas concentration is less than or equal to a first preset threshold value, controlling the controllable valve to act and conducting the auxiliary gas pipeline.
2. The gas distribution device of claim 1, wherein the number of the auxiliary gas delivery conduits is equal to the number of the main gas delivery conduits, and each of the auxiliary gas delivery conduits is disposed in one-to-one correspondence with each of the main gas delivery conduits.
3. The gas distribution device of claim 2, wherein the number of controllable valves is equal to the number of associated gas lines, and wherein each controllable valve is in one-to-one correspondence with each associated gas line.
4. A gas distribution device according to any of claims 1-3, wherein the controllable valve comprises a solenoid valve.
5. The gas distribution device according to any of claims 1 to 3, wherein the showerhead comprises:
a splint;
the first electrode plate is arranged on the lower surface of the clamping plate;
and the gaskets are arranged between the clamping plates and the first electrode plate and are used for isolating the spray head into a plurality of independent gas distribution areas.
6. The gas distribution device of claim 5, wherein the plate has an even number of first gas injection holes formed through the upper and lower surfaces thereof, and the plate portion corresponding to each of the gas distribution regions includes at least one of the first gas injection holes;
an even number of second gas injection holes penetrating through the upper surface and the lower surface of the first electrode plate are formed in the first electrode plate, and the portion, corresponding to each gas distribution area, of the first electrode plate at least comprises one second gas injection hole.
7. A gas distribution apparatus according to any of claims 1 to 3, wherein the showerhead is circular in shape;
the nozzle sequentially comprises a first gas distribution area, a second gas distribution area and a third gas distribution area from the circle center to the circumference, wherein the first gas distribution area is circular, and the second gas distribution area and the third gas distribution area are both circular.
8. The gas distribution device according to any of claims 1-3, further comprising:
the alarm device is electrically connected with the controller;
the controller is configured to:
and if the gas concentration is greater than or equal to a second preset threshold value, controlling the alarm device to send alarm information, wherein the second preset threshold value is greater than the first preset threshold value.
9. The gas distribution device of any of claims 1-3, wherein the second process gas is the same or different from the first process gas.
10. A plasma processing apparatus for generating plasma to process a substrate, comprising:
the gas distribution device of any one of claims 1-9;
and the first process gas and/or the second process gas flow into the processing chamber through the gas distribution device, plasma is formed in the processing chamber, and a substrate to be etched in the processing chamber is etched.
11. The plasma processing apparatus of claim 10 wherein the second process gas is the same or different than the first process gas.
12. A plasma processing method comprising generating plasma using the plasma processing apparatus according to claim 10 or 11 to perform etching processing on a substrate to be etched, and controlling each of the controllable valves to operate so that a gas concentration in each of the gas distribution regions is within a corresponding predetermined gas concentration range.
13. A semiconductor structure characterized by being subjected to etching treatment by the plasma treatment method according to claim 12.
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| CN1468441A (en) * | 2000-10-06 | 2004-01-14 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| KR20070031778A (en) * | 2005-09-15 | 2007-03-20 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma etching apparatus and plasma etching method |
| CN101017771A (en) * | 2006-02-08 | 2007-08-15 | 东京毅力科创株式会社 | Gas supply apparatus, substrate processing apparatus and gas supply method |
| CN110890259A (en) * | 2018-09-07 | 2020-03-17 | 长鑫存储技术有限公司 | Internal leakage monitoring system and method for gas distribution plate |
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| JP4177192B2 (en) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | Plasma etching apparatus and plasma etching method |
| JP5902896B2 (en) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | Substrate processing equipment |
| US11742188B2 (en) * | 2019-08-15 | 2023-08-29 | Tokyo Electron Limited | Substrate processing method, pressure control apparatus and substrate processing system |
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| CN1468441A (en) * | 2000-10-06 | 2004-01-14 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| KR20070031778A (en) * | 2005-09-15 | 2007-03-20 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma etching apparatus and plasma etching method |
| CN101017771A (en) * | 2006-02-08 | 2007-08-15 | 东京毅力科创株式会社 | Gas supply apparatus, substrate processing apparatus and gas supply method |
| CN110890259A (en) * | 2018-09-07 | 2020-03-17 | 长鑫存储技术有限公司 | Internal leakage monitoring system and method for gas distribution plate |
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