JPH0590169A - Gas feeder, and microwave plasma film forming device equipped with same - Google Patents

Gas feeder, and microwave plasma film forming device equipped with same

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Publication number
JPH0590169A
JPH0590169A JP24549391A JP24549391A JPH0590169A JP H0590169 A JPH0590169 A JP H0590169A JP 24549391 A JP24549391 A JP 24549391A JP 24549391 A JP24549391 A JP 24549391A JP H0590169 A JPH0590169 A JP H0590169A
Authority
JP
Japan
Prior art keywords
gas
gas supply
supply device
means
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24549391A
Other languages
Japanese (ja)
Inventor
Katsuaki Saito
Masahiro Tanaka
Satoru Todoroki
Kunihiko Watanabe
克明 斎藤
邦彦 渡邉
政博 田中
悟 轟
Original Assignee
Hitachi Ltd
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, 株式会社日立製作所 filed Critical Hitachi Ltd
Priority to JP24549391A priority Critical patent/JPH0590169A/en
Publication of JPH0590169A publication Critical patent/JPH0590169A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide the title gas feeder advantageous to the even film formation in large area even if highly reactive gasses are used by a method wherein multiple pores are made in the two joined quartz plates while the inner space of the pores is divided into multiple parts so as to feed respective gasses from independent gas controllers. CONSTITUTION:Trenches 3 are provided in a quartz plate 16 side while gas blowing-off ports 2a, 2b are arranged on the reacting position of the quartz plate 1a. Besides, these quartz plates 1a, 1b are fixed by a quartz fixing jig 4. Material gasses are fed from gas feeding sources respectively and independently through gas feed pipes 5a, 5b. At this time, the space given to the quartz plate fixing jig 4 to introduce the gasses is partitioned off not to make them mix with one another. Accordingly, the gasses will not mix with one another in the title planar gas feeder flowing independently to be mixed with one another for the first time only after they are blown out of the blowing ports 2a, 2b. Through these procedures, the films can be evenly formed in a large area even if highly reactive gas sources are used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply apparatus used in a microwave plasma film forming apparatus for forming a film by utilizing microwave plasma, and more particularly to a gas supply apparatus suitable for large area uniform processing.

[0002]

2. Description of the Related Art As a gas supply device for a microwave plasma film forming apparatus, one described in Japanese Patent Laid-Open No. 63-213344 has been known. The gas supply device of this device is made of ring-shaped metal and has multiple outlets,
It is arranged in the vicinity of the microwave introduction part or in the vicinity of the wall of the vacuum chamber so as not to hinder the progress of microwaves. The reaction gases are premixed before being introduced into the vacuum chamber and supplied from the gas outlet.

Other known gas supply devices are slit-shaped devices and nozzle-shaped devices. In many cases, they are made of a conductive metal such as stainless steel. Therefore, in any case, it is characterized in that it is arranged outside the microwave passage space so as not to hinder the propagation of microwaves.

[0004]

In the gas supply apparatus described above, no consideration has been given to the nonuniformity of the distance from the gas outlet to the substrate. That is, the distance that the gas reaches the substrate after being blown out has an important factor that determines the film quality because it affects the decomposition degree of the gas, the active species for film formation, and the like, but has not been sufficiently considered. It is considered that the reason is that the difference in the distance from each air outlet was small because the substrate was small, and it was within the allowable range. However, if a large-area substrate is adopted, the difference in distance may double or more, and this point needs to be considered.

Further, for example, when forming a film of silicon oxide, monosilane and oxygen are used as raw material gases, but since these gases have strong reactivity, it is impossible to premix and introduce them. Therefore, there is a problem that two or more gas supply devices are required in the vacuum chamber.

Further, no consideration has been given to the improvement of gas flow for large area film formation, which is disadvantageous for large area uniform film formation.

An object of the present invention is to firstly provide a gas introduction device for a highly reactive gas, and secondly to provide a gas introduction device advantageous for large area uniform film formation. ..

[0008]

[Means for Solving the Problems] For the above-mentioned first object, a gas is used which is made of a material through which microwaves are transmitted and which is installed at an equal distance from the object to be processed and which is provided with a gas in the normal direction of the object. A gas supply device having a plurality of blowout ports is installed. Specifically, a gas supply device in which two quartz plates are stacked and a plurality of holes are formed in one of them is conceivable. Also, when using a highly reactive source gas, the following two methods can be used to solve the problem. That is, the first method is a method of dividing the internal space of the gas supply device into a plurality of parts and supplying each gas from an independent gas control device, and the reaction gases are mixed only in the vacuum chamber. A second method is a method in which the gas supply means has a multi-layer structure, each gas outlet is arranged at the same position, and each gas is supplied to each layer from an independent gas control device, and the reaction gas is a vacuum chamber. It is mixed just before the introduction. According to this method, the raw material gas does not react before the introduction into the vacuum chamber, and stable film formation becomes possible.

For the second object, the gas supply device having the above-mentioned first structure is adopted, and a large amount of gas is supplied to the gas outlet corresponding to the thin film thickness portion. It is solved by adopting a method of locally controlling the gas flow rate so as to improve the distribution.

[0010]

[Operation] Film formation in a microwave plasma film forming apparatus is usually
The film formation pressure is about 0.1 Pa, which is several orders of magnitude lower than the film formation using conventional high-frequency glow discharge. The pressure region of this degree is a molecular flow region where the straightness of the gas becomes remarkable. Therefore, the distance from the gas outlet to the substrate is important particularly in the case of uniform film formation over a large area. Therefore, we adopted a flat air blower composed of a material that transmits microwaves,
The gas is supplied from gas outlets arranged equidistantly facing the substrate. Therefore, the microwave inevitably propagates through the gas supply device.

By the way, in a system in which two dielectric plates are simply arranged in parallel, a gas outlet is provided in one of them, and gas is supplied to the space between them, the gas supply route is a single system, and for example, monosilane is used. It becomes impossible to supply a gas such as oxygen and oxygen that causes a reaction just by mixing. Therefore, a method has been adopted in which the space inside the gas supply device is divided into a plurality of spaces. As a dividing method, a method of dividing in a plane,
Although there are three-dimensional division methods, in any case, it is necessary to have a structure in which the gas is mixed only in the vacuum chamber or near the gas outlet. By adopting the gas supply device as described above, the reaction in the gas supply device can be prevented and stable film formation becomes possible.

Further, as described above, since the microwave propagates through the gas supply device, it is necessary to consider the size of the space. That is, it is necessary to prevent microwave discharge from occurring in the gas supply device, and specifically, the maximum thickness needs to be 0.5 mm or less.

Further, among the gas supply devices, the one in which the space is divided in a plane is effective for uniform film formation in large area film formation. That is, by supplying a large amount of raw material gas to a portion where the film thickness is thin due to the structural reason of the device,
It is possible to improve the film thickness distribution.

[0014]

Embodiments of the present invention will be described below with reference to FIGS.

(Embodiment 1) FIG. 1A is a vertical sectional view of a planar gas supply apparatus 20 showing an embodiment of the present invention. Further, FIG. 1B is a plan view of the same planar gas supply device 20. According to this embodiment, of the two quartz plates 1a and 1b, the groove 3 is provided on the side of the quartz plate 1b having a thickness of 10 mm, and the quartz plate 1a having a thickness of 3 mm has a diameter 0. Gas outlets 2a and 2b of 0.35 mm are arranged. The cross-sectional shape of the groove 3 is a semicircle having a diameter of 0.5 mm. Further, these quartz plates 1a and 1b are the quartz fixing jig 4
Is fixed by. Although not shown in this figure, a fluorine rubber or metal seal is used as the gas seal. The raw material gas used for film formation is independently supplied from the gas supply source 21 through the gas supply pipes 5a and 5b. In this case, the quartz plate fixing jig 4 has a space for guiding the gas to the groove 3, and the space is also partitioned here so as not to mix with each other. Therefore, the gas flows independently in the planar gas supply device 20 without being mixed, and the gas is mixed only after being blown out from the gas outlets 2a and 2b. Here, the gas outlet 2a,
It is necessary to consider the arrangement of 2b and the groove 3 so that the gas can be uniformly mixed.

(Embodiment 2) FIG. 2A is a vertical sectional view of a planar gas supply apparatus 20 showing an embodiment of the present invention. Further, FIG. 2B is a plan view of the same planar gas supply device 20. According to this example, two 3 mm thick quartz plates 1
A and 1b sandwich a spacer 7 and are fixed by a quartz plate fixing jig 4 at an interval of about 0.3 mm. Further, the quartz plate 1a is provided with gas outlets 2a and 2b having a diameter of 0.35 mm. The other parts have the same structure as that of the first embodiment. In addition, in the case of the present embodiment, no gas sealing or the like is particularly performed between the spacer 6 and the quartz plates 1a and 1b, but since the conductance is poor, film formation by gas mixing was not performed. Of course, it is desirable to provide a gas seal at this portion to completely prevent gas mixture.
Further, in the case of the present embodiment as well, it is necessary to consider the arrangement of the gas outlets 2 and the spacers 6 for the same reason as in the first embodiment.

(Embodiment 3) FIG. 3A is a vertical sectional view of a planar gas supply apparatus 20 showing an embodiment of the present invention. Further, FIG. 3B is a plan view of the same planar gas supply device 20. According to this embodiment, the quartz plates 1a, 1a having a thickness of about 3 mm are used.
Among b and 1c, 1a is provided with a gas outlet 2 having a diameter of 0.7 mm, and 1b is provided with a gas outlet 2 having a diameter of 0.35 mm at the same position. In addition, each quartz plate 1a, 1b, 1
c is fixed at about 0.3 mm intervals by the quartz plate fixing jig 4. Further, the gas supply pipe 5a is connected to the quartz plates 1a and 1a.
Between b, the gas supply pipe 5b can supply gas between the quartz plates 1b and 1c. In the case of the present embodiment, the gas is mixed near the gas outlet 2 and used for film formation.
Therefore, the gas flow rate ratio on the substrate can be made relatively uniform. Also, when using three or more types of gas,
The number of quartz plates 1 should be increased in order. In this case, even if the gas outlets 2 have the same diameter, they are functionally sufficient, but it is desirable to make the outside smaller as in this embodiment for the purpose of preventing gas from entering between the quartz plates 1.

(Embodiment 4) FIG. 4 is a vertical sectional view of a microwave plasma film forming apparatus equipped with the planar gas supply device 20 of the present invention. The planar gas supply device 20 is the second embodiment.
The one described in 1. was used.

A method of forming a silicon oxide film on the plate-shaped glass substrate 17 as a sample by the chemical vapor deposition method using this apparatus will be described below.

First, the inside of the vacuum chamber 11 is adjusted to 0.0001 P by using the rotary pump 24 and the turbo molecular pump 23.
It was evacuated to a high vacuum.

Second, in the gas supply device 20 shown in FIG. 2, 5 cc / sec of monosilane is supplied from the gas supply pipe 5a,
Oxygen was introduced into the vacuum chamber 11 at a rate of 20 cc / sec from the gas supply pipe 5b. That is, monosilane and oxygen are supplied into the vacuum chamber 11 from the different gas outlets 2a and 2b,
Mixed.

Thirdly, the main valve 22 was adjusted to maintain the internal pressure of the vacuum chamber 11 at about 0.1 Pa.

Fourth, the main coil 14 and the auxiliary coil 15
The current of the sheet gas supply device 20 is adjusted to about 100
A magnetic field of 0.0875 Tesla for causing electron cyclotron resonance was formed at a position of mm.

Fifth, from the microwave supply means 13 through the waveguide 12 and the microwave introduction window 28 made of quartz.
A microwave of 45 GHz and 100 W was introduced into the vacuum chamber 11 to start discharge.

As a result, a silicon oxide film of about 650 nm was formed on the substrate 17 of 200 mm × 200 mm in 5 minutes. Further, when the gas supply device 20 was disassembled, almost no silicon oxide was formed inside. Further, there was no change in the film formation pressure monitor and the gas flow rate monitor, and the gas outlet 2 was hardly clogged due to the formation of silicon oxide.

The distance between the quartz plates 1 and the sizes of the gas outlets 2 and the grooves 3 must be 0.5 mm or less. The reason is that microwave discharge occurs in the space above that, and amorphous silicon is deposited in the space where monosilane is introduced, for example. In fact, film formation occurred in a space of 0.7 mm. 0.5m there
m or less, preferably 0.3 mm or less.

(Embodiment 5) FIG. 5 is a longitudinal sectional view of a microwave plasma film forming apparatus provided with a conventional ring-shaped gas supply device 29 as a gas introduction means and a planar gas supply device 20. For example, the flow rates of monosilane and oxygen are each 5 cc
/ Min. , 50 cc / min. When the flow rate ratio is large, the film formation is controlled by monosilane and oxygen acts like a carrier gas. Therefore, it is sufficient to consider only monosilane for the film thickness distribution, and oxygen can be supplied from the ring-shaped gas supply device 29. Therefore, it is not necessary to divide the internal space of the planar gas supply device 20. Also in the case of this example, stable film formation similar to that of Example 4 was possible.

(Embodiment 6) The sixth embodiment is an example in which the film thickness distribution is improved in the film formation by the microwave plasma film forming apparatus provided with the gas supply device 20 of the present invention. Figure 6
2 shows a cross-sectional view and a plan view of the gas supply device 20 used. A silicon wafer having a diameter of 6 inches was used as the substrate 17. Further, as the source gas, a mixture of monosilane and nitrogen of 5 cc / min and 20 cc / min was used. Other film forming conditions and film forming procedures are the same as in the case of the fourth embodiment. In this film formation, the reactivity of monosilane, which is the source gas, with nitrogen is low, and it is possible to mix and supply them in advance.

First, FIG. 7 (a) shows the film thickness distribution when the same flow rate is supplied from the gas supply pipes 5a and 5b. In this case, the film thickness is slightly thin around the substrate. Therefore, the flow rate of the raw material gas supplied from the gas supply pipe 5a is
Monosilane increased to 7 cc / min and nitrogen increased to 70 cc / min. That is, the total flow rate of the source gas supplied to the peripheral portion of the substrate 17 was increased. As a result, as shown in FIG. 6B, the film thickness in the peripheral portion was increased and the uniformity was improved as a whole. Note that, contrary to the case of the present embodiment, the present invention is also effective when intentionally forming the film thickness distribution or actively locally changing the film composition or film characteristics.

[0030]

According to the present invention, stable film formation can be performed uniformly over a large area even in the case of film formation using a highly reactive source gas. It is also effective in improving the distribution of film thickness and film characteristics.

[Brief description of drawings]

FIG. 1 is an explanatory view of an embodiment of a gas supply device of the present invention,

FIG. 2 is an explanatory view of a second embodiment of the gas supply device of the present invention,

FIG. 3 is an explanatory view of a third embodiment of the gas supply device of the present invention,

FIG. 4 is a system diagram of a microwave plasma film forming apparatus of the present invention,

FIG. 5 is a system diagram of a microwave plasma film forming apparatus of the present invention,

FIG. 6 is an explanatory view of a gas supply device of the present invention,

FIG. 7 is a characteristic diagram showing a film thickness distribution of silicon oxide.

[Explanation of symbols]

1 ... Quartz plate, 2 ... Gas outlet, 3 ... Groove, 4 ... Quartz plate fixing jig, 5 ... Gas supply pipe.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuaki Saito 4026 Kuji Town, Hitachi City, Ibaraki Prefecture Hitachi Ltd. Hitachi Research Laboratory

Claims (7)

[Claims]
1. A gas supply device, which is made of a material that allows microwaves to pass therethrough, is equidistant from a substrate, and has a plurality of outlets for ejecting gas in a direction normal to the substrate. And a structure for mixing the gas outside the supply device or only at the outlet part.
2. A gas supply characterized in that two dielectric plates are arranged in parallel, one of which faces the substrate is provided with a plurality of holes, and the space between the dielectric plates is divided into a plurality of spaces. apparatus.
3. The method according to claim 1, wherein at least three dielectric plates are arranged in parallel, and a plurality of holes are provided at the same position except one of the dielectric plates on the side opposite to the substrate, and the diameters of the holes are the same as those of the holes. A gas supply device that grows in size as it moves away from a dielectric plate that does not have a hole.
4. A gas supply device using a quartz plate or an alumina plate as the dielectric plate according to claim 2.
5. A gas supply device according to claim 2, wherein the distance between the dielectric plates is 0.5 mm or less.
6. A micro-chamber comprising a vacuum exhaust means, a sample holding means, a reaction gas and discharge gas introducing means, a magnetic field forming means for causing electron cyclotron resonance, and a microwave power supply means in a vacuum chamber. A microwave plasma film forming apparatus, wherein the gas supply device according to claim 1 is arranged as a gas introduction means at a position facing the substrate.
7. A micro-chamber comprising a vacuum exhaust means, a sample holding means, a reaction gas and discharge gas introducing means, a magnetic field forming means for causing electron cyclotron resonance, and a microwave power supply means in a vacuum chamber. A plurality of gas supply means are provided, one of which is composed of a substance through which microwaves are transmitted, and which is installed at an equal distance from the substrate and blows out gas in the normal direction of the substrate. A microwave plasma film forming apparatus, which is a gas supply device having an outlet.
JP24549391A 1991-09-25 1991-09-25 Gas feeder, and microwave plasma film forming device equipped with same Pending JPH0590169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24549391A JPH0590169A (en) 1991-09-25 1991-09-25 Gas feeder, and microwave plasma film forming device equipped with same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24549391A JPH0590169A (en) 1991-09-25 1991-09-25 Gas feeder, and microwave plasma film forming device equipped with same

Publications (1)

Publication Number Publication Date
JPH0590169A true JPH0590169A (en) 1993-04-09

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Family Applications (1)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JPH0835067A (en) * 1994-07-20 1996-02-06 G T C:Kk Film forming device and film formation
EP0747503A1 (en) * 1995-06-09 1996-12-11 Ebara Corporation Reactant gas injector for chemical vapor deposition apparatus
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6930346B2 (en) 2002-03-13 2005-08-16 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-K dielectrics
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7622355B2 (en) 2002-06-21 2009-11-24 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JPH0835067A (en) * 1994-07-20 1996-02-06 G T C:Kk Film forming device and film formation
EP0747503A1 (en) * 1995-06-09 1996-12-11 Ebara Corporation Reactant gas injector for chemical vapor deposition apparatus
US5728223A (en) * 1995-06-09 1998-03-17 Ebara Corporation Reactant gas ejector head and thin-film vapor deposition apparatus
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6930346B2 (en) 2002-03-13 2005-08-16 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-K dielectrics
US7622355B2 (en) 2002-06-21 2009-11-24 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US8362576B2 (en) 2002-08-26 2013-01-29 Round Rock Research, Llc Transistor with reduced depletion field width

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