CN110890259A - Internal leakage monitoring system and method for gas distribution plate - Google Patents
Internal leakage monitoring system and method for gas distribution plate Download PDFInfo
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- CN110890259A CN110890259A CN201811041056.6A CN201811041056A CN110890259A CN 110890259 A CN110890259 A CN 110890259A CN 201811041056 A CN201811041056 A CN 201811041056A CN 110890259 A CN110890259 A CN 110890259A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract
The invention provides an internal leakage monitoring system and method of a gas distribution plate, wherein the internal leakage monitoring system comprises a spray head, a monitoring device and a monitoring system, wherein the spray head comprises a plurality of mutually independent areas to be monitored; a splitter having an inlet coupled to the process main gas, the splitter comprising a plurality of outlets; each outlet is communicated with each area to be monitored through each gas transmission pipeline; and each pressure monitoring device is respectively communicated with each to-be-monitored area so as to monitor the pressure of each to-be-monitored area. By utilizing the invention, the pressure monitoring device is additionally arranged at the gas outlet of the flow divider of the gas distribution disc of the machine table, so that the pressure in different independent areas to be monitored in the gas distribution disc of the machine table in the production process can be monitored in real time, the internal leakage of gas distribution can be found immediately according to the pressure fluctuation in the areas to be monitored, the maintenance is carried out, and the product waste rate is reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an internal leakage monitoring system and method of a gas distribution plate.
Background
During a plasma etching process in semiconductor manufacturing, it is necessary to ionize a reaction gas to generate plasma. Typically, the plasma is generated and processed in a reduced pressure atmosphere, such as to etch a film layer on the wafer. In these processes, parameters such as gas flow and pressure in the reaction chamber of the etching machine have a significant effect on the process performance, and thus, the control of these parameters is particularly important. The gas distribution plate is one of the main components of the etching machine, and has a large influence on the uniformity of the process. The existing gas distribution plate is generally divided into a plurality of areas, and different areas need to be separately supplied with gas respectively so as to meet the requirement on uniformity in the semiconductor process.
Taking an example of an MK/RK series etching device (TEL (Tokyo Electron Ltd., Tokyo electronics, Japan) series etching device, gas distribution of the MK/RK series etching device adopts an S-RDC (Selective chemical distribution control) mode, process gas is divided by a gas distribution plate and then injected into a reaction cavity through three regions of the gas distribution plate, and the three regions of the gas distribution plate are isolated into independent spaces by using C-type O-Ring. Generally, according to the process requirements, the supply amount of gas in each area is different, the pressure in the three areas is also different, if the O-Ring is installed reversely or aged, the internal leakage of the gas distribution plate can be caused, the gas supply in the area of the internal leakage of the gas distribution plate is abnormal, the distribution of the gas injected into the reaction chamber deviates from the preset value, and therefore the etching uniformity is affected, the internal leakage of the gas distribution plate cannot be monitored in real time by the existing S-RDC gas supply method, and a large amount of products can be scrapped.
Therefore, it is an important technical problem to be solved by those skilled in the art to find a system and method for effectively monitoring the leakage in the gas distribution plate.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a system and a method for monitoring inner leakage of a gas distribution plate, which are used to solve the problem that there is no pressure monitoring device in the gas distribution plate of a machine in the prior art, which cannot monitor the inner leakage condition in the gas distribution plate in real time, resulting in scrapping of a large amount of products.
To achieve the above and other related objects, the present invention provides an internal leakage monitoring system for a gas distribution plate, comprising:
the spray head comprises a plurality of mutually independent areas to be monitored;
a splitter having an inlet coupled to the process main gas, the splitter comprising a plurality of outlets;
each outlet is communicated with each area to be monitored through each gas transmission pipeline;
and each pressure monitoring device is respectively communicated with each to-be-monitored area so as to monitor the pressure of each to-be-monitored area.
As an improvement of the internal leakage monitoring system of the gas distribution plate, the spray head comprises a clamping plate, an electrode plate and a plurality of gaskets, wherein the electrode plate is fixedly arranged on the lower surface of the clamping plate, and the gaskets are arranged between the clamping plate and the electrode plate; the washer isolates the spray head into a plurality of mutually independent areas to be monitored.
As an improvement of the internal leakage monitoring system of the gas distribution plate of the present invention, the clamping plate is provided with a plurality of first gas injection holes penetrating through the upper and lower surfaces thereof, wherein the clamping plate portion corresponding to each region to be monitored at least comprises one first gas injection hole; the electrode plate is provided with a plurality of second gas injection holes penetrating through the upper surface and the lower surface of the electrode plate, wherein the electrode plate part corresponding to each region to be monitored at least comprises one second gas injection hole.
As an improvement of the internal leakage monitoring system of the gas distribution plate, a plurality of annular grooves are formed in the clamping plate, and the annular grooves are used for placing the gaskets.
As an improvement to the inner leakage monitoring system of the above-mentioned gas distribution plate of the present invention, the material of the electrode plate is selected from one of the group consisting of single crystal silicon, polycrystalline silicon and silicon carbide.
As an improvement to the internal leakage monitoring system of the above-described gas distribution plate of the present invention, the material of the clamping plate is selected from one of the group consisting of graphite, silicon carbide and aluminum.
As an improvement to the above-described internal leakage monitoring system of the gas distribution plate of the present invention, the monitoring system further comprises a control valve disposed between each of the pressure monitoring devices and each of the gas transmission lines. .
As an improvement to the internal leakage monitoring system of the above-described gas distribution plate of the present invention, the control valve comprises a solenoid valve.
As an improvement to the internal leakage monitoring system of the above-mentioned gas distribution plate of the present invention, the monitoring system further comprises a control center, and the control center is respectively connected to each of the pressure monitoring devices and each of the control valves.
As an improvement of the internal leakage monitoring system of the gas distribution plate, the monitoring system further comprises an alarm device, wherein the alarm device is connected with the control center and alarms when one or more pressures in the area to be monitored are abnormal.
As an improvement to the internal leakage monitoring system of the gas distribution plate of the present invention, the pressures in two adjacent regions to be monitored are not equal.
As an improvement of the internal leakage monitoring system of the gas distribution plate, a process auxiliary gas inlet is arranged between the pressure monitoring device interface on each gas transmission pipeline and the output port of the pressure monitoring device interface, and the process auxiliary gas inlet is connected with a supply source of process auxiliary gas.
As an improvement to the internal leakage monitoring system of the above-described gas distribution plate of the present invention, the pressure monitoring device comprises a capacitance manometer.
In one embodiment, the shape of the spray head comprises a circle. The shower nozzle includes in proper order from the centre of a circle to the circumference the first district that treats monitoring, the second treats monitoring district and the third treats monitoring district, wherein, the shape of the first district that treats monitoring is circular, the second treats monitoring district and the third treats monitoring district's shape is the ring shape.
In order to achieve the above and other related objects, the present invention further provides a method for monitoring internal leakage of a gas distribution plate, wherein the gas distribution plate comprises a showerhead, a splitter and a plurality of gas transmission pipelines, the showerhead comprises a plurality of mutually independent areas to be monitored, an inlet of the splitter is connected to a process main gas, the splitter comprises a plurality of outlets, and each outlet is respectively communicated with each area to be monitored through each gas transmission pipeline; the monitoring method comprises the following steps:
a pressure monitoring device is arranged on each gas transmission pipeline;
injecting the process main gas into the reaction cavity of the gas distribution plate through a plurality of areas to be monitored of the gas distribution plate;
respectively monitoring the pressure value of each to-be-monitored area by using a pressure monitoring device, and uploading the pressure value of each to-be-monitored area to a control center;
and the control center judges whether the gas distribution plate internally leaks or not according to whether the received pressure values of one or more regions to be monitored are abnormal or not.
As an improvement of the internal leakage monitoring method of the gas distribution plate of the present invention, the showerhead includes a clamping plate and an electrode plate fixed on a lower surface of the clamping plate, and a plurality of gaskets are disposed between the clamping plate and the electrode plate to isolate the showerhead into a plurality of independent regions to be monitored.
As an improvement of the internal leakage monitoring method of the gas distribution plate, a plurality of annular grooves are arranged on the clamping plate of the spray head and used for placing the gasket.
As an improvement to the above-mentioned internal leakage monitoring method of the gas distribution plate of the present invention, the control center controls the communication state of each of the pressure monitoring devices and each of the gas transmission pipelines through a control valve.
As an improvement to the above-described internal leakage monitoring method of the gas distribution plate of the present invention, the control valve includes a solenoid valve.
As an improvement of the internal leakage monitoring method of the gas distribution plate of the present invention, the monitoring method further includes that when the pressure of one or more of the areas to be monitored is abnormal, the control center triggers an alarm device to alarm.
As an improvement of the internal leakage monitoring method of the gas distribution plate of the present invention, when no internal leakage occurs in the gas distribution plate, the pressures in the two adjacent regions to be monitored are not equal.
As an improvement of the method for monitoring internal leakage of the gas distribution plate of the present invention, the method further includes injecting process auxiliary gas for fine adjustment of the flow rate of the process main gas into each gas transmission pipeline through a process auxiliary gas inlet provided on each gas transmission pipeline.
As an improvement of the method for monitoring the internal leakage of the gas distribution plate of the present invention, the injection flow rate of the process auxiliary gas in each gas transmission pipeline is smaller than the injection flow rate of the process main gas in the gas transmission pipeline.
As an improvement to the method for monitoring internal leakage of the gas distribution plate of the present invention, each of the process auxiliary gas inlets is located between the pressure monitoring device interface on the corresponding gas transmission pipeline and the corresponding gas transmission pipeline output port.
As an improvement to the above-described internal leakage monitoring method of the gas distribution plate of the present invention, the pressure monitoring device comprises a capacitance manometer.
As an improvement of the internal leakage monitoring method of the gas distribution plate, the monitoring method further comprises the steps of recording and storing the pressure value of each area to be monitored in the control center; and reading the pressure value curves of one or more to-be-monitored areas in a selected time period, and judging whether the inside of the gas distribution plate has the sign of internal leakage in advance according to the pressure value curves of the one or more to-be-monitored areas so as to prevent the internal leakage of the gas distribution plate.
As an improvement to the above-described internal leakage monitoring method of the gas distribution plate of the present invention,
the step that the control center judges whether the gas distribution plate internally leaks according to the received pressure value of one or more areas to be monitored comprises the following steps:
and comparing the pressure values of one or more to-be-monitored areas with a preset pressure value, and when the pressure values of one or more to-be-monitored areas are not in the preset pressure value range, the gas distribution plate has internal leakage.
The improved monitoring method for the internal leakage of the gas distribution plate further comprises the step that when the internal leakage of the gas distribution plate exists, the control center controls the machine station to which the gas distribution plate belongs to stop.
In one example, the shape of the spray head comprises a circle; the sprayer comprises a first area to be monitored, a second area to be monitored and a third area to be monitored from the circle center to the circumference, wherein the first area to be monitored is circular, and the second area to be monitored and the third area to be monitored are circular.
As described above, the system and method for monitoring inner leakage of gas distribution plate according to the present invention have the following advantages:
according to the system and the method, the pressure monitoring device is additionally arranged at the gas outlet of the flow divider of the gas distribution disc of the machine table, so that the pressure in different independent areas to be monitored in the gas distribution disc of the machine table in the production process can be monitored in real time, internal leakage of gas distribution is found immediately according to pressure fluctuation in the areas to be monitored, remedial measures are taken in time, and loss is reduced;
furthermore, the pressure monitoring device is connected with the control center, and the control center controls the machine to be stopped immediately when the pressure in one or more to-be-monitored areas in the gas distribution disc of the machine fluctuates greatly in the production process, so that the direct scrapping of products can be prevented;
furthermore, a pressure curve in a to-be-monitored area within a period of time can be read from the control center, and whether the gas distribution plate has the sign of internal leakage or not is judged in advance according to the variation trend of the pressure value curve of the to-be-monitored area, so that the internal leakage of the gas distribution plate is prevented;
furthermore, the position of the inner leakage of the gas distribution plate can be positioned according to the pressure change trend in two adjacent areas to be monitored, so that the maintenance of operators is facilitated.
Drawings
FIG. 1 is a schematic view of the structure of the gas distribution plate of the present invention.
FIG. 2 is a schematic view of an internal leakage monitoring system for a gas distribution plate according to the present invention.
Fig. 3 is a schematic diagram of the connection between the pressure monitoring device and the control center according to the present invention.
Fig. 4 shows a schematic view of a splint according to the present invention.
Fig. 5 is a schematic view of an electrode plate according to the present invention.
Fig. 6 shows a schematic view of another splint according to the present invention.
FIG. 7 is a schematic view of the gas distribution plate of the present invention without internal leakage.
FIG. 8 is a schematic view of a gasket of the present invention showing no internal leakage.
Fig. 9 is an enlarged view of a portion of fig. 7 shown by a dashed oval.
FIG. 10 is a schematic view of the gas distribution plate of the present invention showing internal leakage.
FIG. 11 is a schematic view of a gasket for internal leakage of the gas distribution plate of the present invention.
Fig. 12 is an enlarged view of a portion of fig. 10 shown by a dashed oval.
Fig. 13 is a schematic diagram showing the pressure change of the pressure monitoring device corresponding to fig. 12.
FIG. 14 is a flow chart of a method of leak monitoring of a gas distribution plate according to the present invention.
Description of the element reference numerals
1 reaction chamber
2 control center
3 spray head
31 electrode plate
311 second gas injection hole
32 clamping plate
321 first gas injection hole
322 groove
4 lower electrode
5 gasket
61 pressure monitoring device
61a first pressure monitoring device
61b second pressure monitoring device
61c third pressure monitoring device
62 control valve
62a first control valve
62b second control valve
62c third control valve
63 technological auxiliary gas switch valve
7 gas pipeline
7a first gas transmission pipeline
7b second gas pipeline
7c third gas transmission pipeline
8 shunt
Z1, Z2, Z3 areas to be monitored
S10-S40 steps
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1-14. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, the gas distribution plate comprises a showerhead 3, wherein the showerhead 3 at least comprises a first zone to be monitored Z1 and a second zone to be monitored Z2 which are independent from each other; a flow divider 8 connected to the showerhead 3, wherein an inlet of the flow divider 8 is connected to the process main gas, a first outlet of the flow divider 8 is communicated with the first zone to be monitored Z1 through a first gas transmission pipe 7a, and a second outlet of the flow divider 8 is communicated with the second zone to be monitored Z2 through a second gas transmission pipe 7 b. In a specific process, process main gas is divided into at least two paths of gas by a Flow divider 8(Flow splitter) after being mixed in a pipeline and is injected into the reaction cavity 1 through a first monitoring area Z1 and a second monitoring area of the spray head 3, generally, according to process requirements, the supply amount of the gas in the two areas to be monitored is different, the pressure in the two areas to be monitored is also different, if O-Ring is reversely installed or aged, the gas in the gas distribution plate leaks, the gas at a high pressure leaks to the gas at a low pressure, the gas in the area to be monitored in which the gas distribution plate internally leaks is abnormally supplied, and the distribution of the gas injected into the reaction cavity 1 deviates from a preset value, so that the etching uniformity is influenced, and a large number of products are scrapped.
Fig. 2 shows a schematic diagram of the inner leakage monitoring system of the gas distribution plate of the present invention, which is used for monitoring the pressure in different independent areas inside the gas distribution plate in real time by adding a pressure monitoring device 61 at the gas outlet of the flow divider 8 of the gas distribution plate of the machine. The gas distribution plate comprises a spray head 3, and the spray head 3 comprises a plurality of mutually independent areas to be monitored; a splitter 8, an inlet of the splitter 8 being connected to the process main gas, the splitter 8 comprising a plurality of outlets; each outlet of the plurality of gas transmission pipelines 7 is communicated with each area to be monitored through each gas transmission pipeline 7; and each pressure monitoring device 61 is respectively communicated with each area to be monitored so as to monitor the pressure of each area to be monitored. As an example, as shown in fig. 2, the sprinkler 3 comprises at least a first zone to be monitored Z1 and a second zone to be monitored Z2 which are independent of each other; a flow divider 8 connected to the showerhead 3, wherein an inlet of the flow divider 8 is connected to the process main gas, a first outlet of the flow divider 8 is communicated with the first zone to be monitored Z1 through a first gas transmission pipe 7a, and a second outlet of the flow divider 8 is communicated with the second zone to be monitored Z2 through a second gas transmission pipe 7 b; the first pressure monitoring device 61a is connected to the pipe wall of the first gas transmission pipeline 7 a; and a second pressure monitoring device 61b connected to a pipe wall of the second gas transmission pipe 7 b. The first pressure monitoring device 61a and the second pressure monitoring device 61b can be used for respectively monitoring the pressure in the first zone Z1 to be monitored and the second zone Z2 to be monitored in the gas distribution plate of a machine in the production process, the internal leakage phenomenon of the gas distribution plate can be found immediately according to the pressure fluctuation in the zones to be monitored, and when the internal leakage of the gas distribution plate exists, corresponding remedial measures are taken to reduce the loss.
It should be noted that, in the present invention, the machine station to which the gas distribution plate belongs includes an etching machine station, but is not limited thereto, and the technical solution of the present invention can also be used for monitoring the inner leakage phenomenon of the gas distribution plate of a furnace tube machine station, a gas distribution plate of an ion implantation machine station, and a gas distribution plate of a thin film manufacturing machine station.
As shown in fig. 3, the monitoring system further includes a control center 2, and the control center 2 is connected to each of the pressure monitoring devices 61. As an example, as shown in fig. 3, the control center 2 is connected to the first pressure monitoring device 61a and the second pressure monitoring device 61b, respectively. The control center 2 is configured to receive and store pressure values of the first pressure monitoring device 61a and the second pressure monitoring device 61b, determine whether the gas distribution plate has internal leakage according to the received pressure values of the first zone to be monitored Z1 and/or the second zone to be monitored Z2, and when the gas distribution plate has internal leakage, the control center 2 controls a machine to which the gas distribution plate belongs to stop.
The monitoring system further comprises an alarm device (not shown) which is connected with the control center 2 and alarms when the pressure in one or more of the areas to be monitored is abnormal. For example, an alarm may be given when the pressure in the first zone to be monitored Z1 and/or the second zone to be monitored Z2 is abnormal.
As shown in fig. 2, the spray head 3 includes a clamping plate 32, an electrode plate 31 fixed on the lower surface of the clamping plate 32, and a plurality of gaskets 5 arranged between the clamping plate 32 and the electrode plate 31; the gasket 5 isolates the spray head 3 into a plurality of mutually independent areas to be monitored. As an example, as shown in fig. 2, the gasket 5 isolates the sprinkler head 3 into the first zone to be monitored Z1 and the second zone to be monitored Z2 which are independent of each other; the material of the electrode plate 31 can be selected from monocrystalline silicon, polycrystalline silicon, silicon carbide or other suitable materials. Single crystal silicon is a preferred material for the electrode plate 31, and high purity single crystal silicon minimizes substrate contamination during plasma processing because it introduces only a minimal amount of undesirable elements into the reaction chamber during plasma processing. The chucking plate 32 is preferably made from a material that is chemically compatible with the process primary and secondary gases used to process semiconductor substrates in the plasma processing chamber, has a coefficient of thermal expansion that closely matches the coefficient of the material of the electrode plate 31, and/or is electrically and thermally conductive, and materials that can be used to make the chucking plate 32 include, but are not limited to, graphite, silicon carbide, aluminum, or other suitable materials. The gasket 5 is a C-shaped O-Ring sealing Ring, and the material of the gasket can be a corrosion-resistant polytetrafluoroethylene sealing Ring or a sealing Ring made of other suitable materials, but not limited thereto.
Specifically, as shown in fig. 4 and 6, a plurality of annular grooves 322 are provided on the clamping plate 32, and the annular grooves 322 are used for positioning and placing the gasket 5.
As shown in fig. 4, 5 and 6, the splint 32 is provided with a plurality of first gas injection holes 321 penetrating through the upper and lower surfaces thereof, wherein the part (Z1a, Z2a, Z3a) of the splint 32 corresponding to each zone to be monitored at least includes one first gas injection hole 321; the electrode plate 31 is provided with a plurality of second gas injection holes 311 penetrating through the upper and lower surfaces thereof, wherein the portion (Z1b, Z2b, Z3b) of the electrode plate 31 corresponding to each zone to be monitored at least comprises one second gas injection hole 311.
As an example, as shown in fig. 4 and 5, the positions and the number of the first gas injection holes 321 on the clamping plate 32 are in one-to-one correspondence with the second gas injection holes 311 on the electrode plate 31. As an example, as shown in fig. 5 and 6, the position and the number of the first gas injection holes 321 of the chucking plate 32 are not completely identical to the second gas injection holes 311 of the electrode plate 31, and the number of the first gas injection holes 321 of the chucking plate 32 is smaller than the number of the second gas injection holes 311 of the electrode plate 31.
It should be noted that three or more areas to be monitored of the spray head 3 may also be provided, and each area to be monitored may be set according to the first area to be monitored Z1 and the second area to be monitored Z2 according to actual conditions. For example, in a specific embodiment, as shown in fig. 2, the shape of the spray head 3 includes a circle, and the spray head 3 sequentially includes the first zone to be monitored Z1, the second zone to be monitored Z2, and the third zone to be monitored Z3 from a circle center to a circumference, where the first zone to be monitored Z1 is a circle, and the second zone to be monitored Z2 and the third zone to be monitored Z3 are circular rings.
The process Gas is supplied to a Gas Box (Gas Box) at the end of the etching machine through a plant service end and is divided into main process Gas (main Gas) and auxiliary process Gas (tuning Gas or add Gas), the main process Gas is divided into multiple paths (the number of the main process Gas and the number of the auxiliary process Gas are consistent and are in one-to-one correspondence with the number of areas to be monitored) through the splitter 8, the gases with different flow proportions flow into the reaction cavity 1 through the different areas to be monitored respectively, and the main process Gas is used for etching a substrate (such as Si) to be etched on the lower electrode 4 of the etching machine; the flow direction of the process gas in any region to be monitored flows into the reaction chamber 1 through the first gas injection holes 321 in the region to be monitored, the gap between the clamping plate 32 and the electrode plate 31 in the region to be monitored, and the second gas injection holes 311 in the region to be monitored.
Fig. 7 shows a schematic view of the gas distribution plate of the present invention without internal leakage, fig. 8 shows a schematic view of the gasket 5 without internal leakage, and fig. 9 shows a partial enlarged view of the gas distribution plate of the present invention shown by the dashed oval frame in fig. 7. When the gasket 5 is disposed between the clamping plate 32 and the electrode plate 31 as shown in fig. 8, the gasket 5 can completely isolate two areas to be monitored on both sides of the gasket 5, the process gas does not flow from one area to be monitored to another adjacent area to be monitored through the gasket 5, and the pressure in the two areas to be monitored is maintained.
Fig. 10 shows a schematic view of the gas distribution plate of the present invention in case of internal leakage, fig. 11 shows a schematic view of the gasket 5 in case of internal leakage of the gas distribution plate of the present invention, and fig. 12 shows a partial enlarged view of the broken line ellipse of fig. 10. As shown in fig. 11, when the gasket 5 disposed between the clamping plate 32 and the electrode plate 31 is reversely mounted, two areas to be monitored on both sides of the gasket 5 cannot be completely isolated, the process gas flows from one area to be monitored (the second area to be monitored Z2) with high pressure to the other area to be monitored (the third area to be monitored Z3) with low pressure adjacent to the other area to be monitored (the third area to be monitored Z3) with low pressure through the reversely mounted gasket 5 as shown by the arrow in fig. 12, the pressure maintenance in the two areas to be monitored changes, one is increased compared with the original value, and the other is decreased compared with the original value (as shown in fig. 13); fig. 10 and 12 are merely illustrated by reversely installing the gasket 5 between the second zone to be monitored Z2 and the third zone to be monitored Z3, and the invention is not limited thereto. A similar situation occurs when the gasket 5 ages, and will not be described in detail here.
It should be noted that the shape of the gasket 5 shown in fig. 1 to 12 is only for exemplifying the purpose that the gasket 5 divides the space between the clamping plate 32 and the electrode plate 31 into independent areas, and the actual shape can be adjusted according to the actual situation, which is not limited to this.
When the gasket 5 is reversely mounted or aged, the process gases in the areas to be monitored on the two sides of the gasket flow, and when no internal leakage occurs in order to monitor the pressure change in the two areas to be monitored, the pressures in the two areas to be monitored are not equal, for example, the pressure of the first area to be monitored Z1 is not equal to the pressure of the second area to be monitored Z2, or the pressure of the second area to be monitored Z2 is not equal to the pressure of the third area to be monitored Z3.
In the operation process of the machine, taking the etching of the silicon wafer as an example, because the edge of the silicon wafer and the central area of the silicon wafer are different, the flow rate of the required etching gas is different, and the flow rate of the process main gas in the corresponding gas transmission pipeline 7 needs to be finely adjusted to meet the process requirement. For this purpose, a process auxiliary gas inlet is provided between the pressure monitoring device 61 on each gas transmission pipeline 7 and the output port of each gas transmission pipeline 7, and the process auxiliary gas inlet is connected with a process auxiliary gas supply source. As an example, as shown in fig. 2, a process auxiliary gas inlet (not shown) is disposed on a pipe wall of each of the first gas transmission pipeline 7a and the second gas transmission pipeline 7 b. It should be noted that the process main gas and the process auxiliary gas may be different, and other gases capable of optimizing and adjusting the etching process may be used as the process auxiliary gas.
Specifically, as shown in fig. 2, a process auxiliary gas switching valve 63 for controlling switching of the process auxiliary gas is further provided between the supply source of the process auxiliary gas and the process auxiliary gas inlet.
In one embodiment, the first pressure monitoring device 61a may employ a vacuum gauge, such as a capacitance manometer; the second pressure monitoring device 61b may be a vacuum gauge, such as a capacitance manometer, however, the first pressure monitoring device 61a and the second pressure monitoring device 61b may also be other devices capable of achieving the purpose, and not limited thereto.
When the pressure monitoring device 61 employs a vacuum gauge (such as a capacitance manometer), since the vacuum gauge can measure only the pressure at the medium to high vacuum, the vacuum gauge is directly exposed to the atmospheric state or the low vacuum state (10)5-102Pa) may cause damage to the vacuum gauge, and for this reason, as shown in fig. 2, a control valve 62 is provided between each of the pressure monitoring devices 61 and each of the gas delivery pipes 7. As an example, as shown in fig. 2, a first control valve 62a may be disposed between the first pressure monitoring device 61a and the pipe wall of the first gas transmission pipeline 7a for controlling the communication state (on or off) between the first pressure monitoring device 61a and the first gas transmission pipeline 7a, and similarly, a control valve 62 may be disposed between other pressure monitoring devices 61 and the pipe wall of the gas transmission pipeline 7, for example, a second control valve 62b may be disposed between the second pressure monitoring device 61b and the pipe wall of the second gas transmission pipeline 7b, and a third control valve 62c may be disposed between the third pressure monitoring device 61c and the pipe wall of the third gas transmission pipeline 7 c. When the pressure in the reaction cavity 1 or the area to be monitored to which the spray head 3 belongs is in an atmospheric stateOr low vacuum state (10)5-102Pa) the control valve 62 cuts off the connection of the pressure monitoring device 61 to the gas line 7 to protect the vacuum gauge from being damaged, in medium vacuum (10)2～10-1Pa) or high vacuum (10)-1～10-5Pa), the control valve 62 communicates the pressure monitoring device 61 with the gas line 7, said pressure monitoring device 61 monitoring the pressure in the area to be monitored to monitor whether there is an internal leak in the gas distribution plate.
As an example, the first control valve 62a comprises a solenoid valve; the second control valve 62b includes an electromagnetic valve, and the third control valve 62c includes an electromagnetic valve, the electromagnetic valve is connected to the control center 2, and the control center 2 controls the communication state between the pressure monitoring device 61 and the gas transmission pipeline 7 by controlling the opening or closing of the electromagnetic valve.
As shown in fig. 14, in order to monitor the internal leakage in the gas distribution plate, the present invention provides a method for monitoring the internal leakage in the gas distribution plate, the gas distribution plate includes a showerhead 3, a splitter 8 and a plurality of gas transmission pipelines 7, the showerhead 3 includes a plurality of independent areas to be monitored, an inlet of the splitter 8 is connected to the process main gas, the splitter 8 includes a plurality of outlets, each of the outlets is respectively communicated with each of the areas to be monitored through each of the gas transmission pipelines 7; shower nozzle 3 includes a splint 32, and the installation is fixed in an electrode plate 31 of splint 32 lower surface, through set up in splint 32 with a plurality of washers 5 will between the electrode plate 31 shower nozzle 3 isolates into mutually independent a plurality of treat the monitoring area. For a detailed description, please refer to the inner leakage monitoring system of the gas distribution plate, which is not described herein. It should be noted that the number of the areas to be monitored of the sprinkler head 3 may be three or more, and as an example, the case that at least two areas to be monitored are included will be described below as the first area to be monitored Z1 and the second areas to be monitored Z2 and … …, respectively.
The inner leakage monitoring method comprises the following steps:
step S10 is executed, a pressure monitoring device 61 is disposed on each gas transmission pipeline 7; as an example, a first pressure monitoring device 61a is disposed on a pipe wall of the first gas transmission pipeline 7a, and a second pressure monitoring device 61b is disposed on a pipe wall of the second gas transmission pipeline 7 b.
It should be noted that, when the gasket 5 is reversely mounted or aged, the process gas in the areas to be monitored on both sides of the gasket will flow, and in order to monitor the pressure change in the two areas to be monitored, and no internal leakage occurs, the pressures in the two areas to be monitored are not equal, for example, the pressure of the first area to be monitored Z1 is not equal to the pressure of the second area to be monitored Z2.
In one embodiment, the first pressure monitoring device 61a may employ a vacuum gauge, such as a capacitance manometer; the second pressure monitoring device 61b may be a vacuum gauge, such as a capacitance manometer, however, the first pressure monitoring device 61a and the second pressure monitoring device 61b may also be other devices capable of achieving the purpose, and not limited thereto.
When the pressure monitoring device 61 employs a vacuum gauge (e.g., a capacitance manometer), since the vacuum gauge can measure only the pressure at the medium to high vacuum, the vacuum gauge is directly exposed to the atmospheric state or the low vacuum state (10)5-102Pa) may cause damage to the vacuum gauge, and for this reason, as shown in fig. 2, a first control valve 62a may be provided between the first pressure monitoring device 61a and the pipe wall of the first gas transmission pipe 7a for controlling the communication state (on or off) of the first pressure monitoring device 61a and the first gas transmission pipe 7a, and similarly, a control valve 62 may be provided between other pressure monitoring devices 61 and the pipe wall of the gas transmission pipe 7, for example, a second control valve 62b may be provided between the second pressure monitoring device 61b and the pipe wall of the second gas transmission pipe 7b, and a third control valve 62c may be provided between the third pressure monitoring device 61c and the pipe wall of the third gas transmission pipe 7 c. When the pressure in the reaction cavity 1 or the area to be monitored to which the spray head 3 belongs is in an atmospheric state or a low vacuum state (10)5-102Pa) the control valve 62 cuts off the connection of the pressure monitoring device 61 to the gas line 7 to protect the vacuum gauge from being damaged, in medium vacuum (10)2～10-1Pa) or high vacuum (10)-1～10-5Pa), the control valve 62 communicates the pressure monitoring device 61 with the gas pipeline 7, said pressure monitoring deviceThe pressure in the area to be monitored is monitored 61 to monitor for internal leaks in the gas distribution plate.
As an example, the first control valve 62a comprises a solenoid valve; the second control valve 62b includes an electromagnetic valve, and the third control valve 62c includes an electromagnetic valve, the electromagnetic valve is connected to the control center 2, and the control center 2 controls the communication state of the pressure monitoring device 61 and the gas transmission pipeline 7 by controlling the on-off state of the electromagnetic valve 62.
Performing step S20, injecting the process main gas into the reaction chamber 1 to which the gas distribution plate belongs through the plurality of regions to be monitored of the gas distribution plate; as an example, the process main gas is injected into the reaction chamber 1 to which the gas distribution plate belongs through the first zone to be monitored Z1 and the second zone to be monitored Z2 of the gas distribution plate.
Specifically, the process Gas is supplied to a Gas Box (Gas Box) at the end of the etching machine through a plant service end, and is divided into main process Gas (main Gas) and auxiliary process Gas (tuning Gas or add Gas), the main process Gas is divided into multiple paths (the number of the main process Gas and the number of the auxiliary process Gas are consistent and are in one-to-one correspondence with each other) through the splitter 8, the multiple paths of the main process Gas and the auxiliary process Gas have different flow proportions, and the multiple paths of the main process Gas and the auxiliary process Gas flow into the reaction chamber 1 through different areas to be monitored respectively to etch a substrate (for example, Si) to be etched on the lower electrode 4 of the; the process gas flows into the reaction chamber 1 through the first gas injection holes 321 in any region to be monitored, the gap between the clamping plate 32 and the electrode plate 31 in the region to be monitored, and the second gas injection holes 311 in the region to be monitored in sequence.
As an example, as shown in fig. 2, the shape of the spray head 3 may be a circle, and the spray head 3 sequentially includes, from a circle center to a circumference, the first zone to be monitored Z1, the second zone to be monitored Z2, and the third zone to be monitored Z3, where the first zone to be monitored Z1 is a circle, and the second zone to be monitored Z2 and the third zone to be monitored Z3 are circular rings. The process gas is injected into the reaction cavity 1 through three paths of gases with different flow ratios of the flow divider 8 through three areas to be monitored, namely an inner area (Z1)/a middle area (Z2)/an outer area (Z3) of the spray head 3 respectively, wherein the flow rates of the three paths of gases are respectively 40%, 35% and 25% of the injection flow rate of the process gas.
In the operation process of the etching machine, taking the etching of the silicon wafer as an example, because the edge of the silicon wafer and the central area of the silicon wafer are different, the flow rate of the required etching gas is different, the flow rate of the process main gas in the corresponding gas transmission pipeline 7 needs to be finely adjusted to meet the process requirement, a small flow rate of process auxiliary gas needs to be injected into the gas transmission pipeline 7 of the process main gas, and the process main gas and the process auxiliary gas can adopt the same gas or mixed gas. It should be noted that the process main gas and the process auxiliary gas may be different, and other gases capable of optimizing and adjusting the etching process may be used as the process auxiliary gas.
Specifically, process auxiliary gas for finely adjusting the flow rate of the process main gas is injected into each of the gas transmission pipelines 7 through a process auxiliary gas inlet provided on each of the gas transmission pipelines 7, respectively. As an example, process auxiliary gas for fine adjustment of the flow rate of the process main gas is injected into the first gas transmission pipeline 7a and the second gas transmission pipeline 7b through process auxiliary gas inlets provided on the pipe walls of the first gas transmission pipeline 7a and the second gas transmission pipeline 7b, respectively, wherein each process auxiliary gas inlet is located between an interface of the pressure monitoring device 61 on the corresponding gas transmission pipeline 7 and an output port of the corresponding gas transmission pipeline 7. The injection flow rate of the process auxiliary gas in each gas transmission pipeline 7 is smaller than that of the process main gas in the gas transmission pipeline 7.
Step S30 is executed, the pressure monitoring device 61 is used to monitor the pressure value of each to-be-monitored area, and the pressure value of each to-be-monitored area is uploaded to the control center 2; as an example, the pressure values of the first zone to be monitored Z1 and the second zone to be monitored Z2 are monitored by the first pressure monitoring device 61a and the second pressure monitoring device 61b, respectively, and the pressure values of the first zone to be monitored Z1 and the second zone to be monitored Z2 are uploaded to the control center 2.
As an example, the control center 2 may be a fault monitoring control system FDC (fault detectcontrol), configured to monitor each data item during a silicon wafer processing step (run), and when there is an abnormality in the data item, send a notification to notify an engineer to confirm and stop the processing step, specifically, a pressure value in each area to be monitored is uploaded to the FDC system through the SVID for monitoring.
And step S40 is executed, and the control center 2 determines whether the internal leakage occurs in the gas distribution plate according to the received pressure values of the one or more areas to be monitored. As an example, the control center 2 determines whether or not internal leakage occurs in the gas distribution plate according to the pressure values received from the first zone to be monitored Z1 and/or the second zone to be monitored Z2.
Specifically, the control center 2 is also configured to record and store pressure values of the first zone to be monitored Z1 and the second zone to be monitored Z2, compare the pressure values in the first zone to be monitored Z1 and the second zone to be monitored Z2 with pressure preset values in corresponding zones to be monitored, and when the pressure values of the first zone to be monitored Z1 and/or the second zone to be monitored Z2 are not within a range of the pressure preset values in the corresponding zones to be monitored, it is indicated that internal leakage exists in the gas distribution plate.
In an embodiment, the monitoring method further includes that when the gas distribution plate has an internal leakage, the control center 2 controls the machine station to which the gas distribution plate belongs to be stopped.
In an embodiment, the monitoring method further includes that when the pressure of one or more of the areas to be monitored is abnormal, the control center 2 triggers an alarm device to alarm; as an example, when the pressure in the first zone to be monitored Z1 and/or the second zone to be monitored Z2 is abnormal, the control center 2 triggers an alarm device to alarm, specifically, a pressure alarm threshold value of each zone to be monitored may be set in the process menu Recipe, and when the pressure value in a zone to be monitored exceeds the pressure alarm threshold value of the zone to be monitored, the control center 2 triggers an alarm device to alarm.
In an embodiment, the monitoring method further includes recording and storing the pressure value of each to-be-monitored area in the control center 2; and reading the pressure value curves of one or more to-be-monitored areas in a selected time period, and judging whether the inside of the gas distribution plate has the leakage sign in advance according to the pressure value curves of the one or more to-be-monitored areas so as to prevent the leakage in the gas distribution plate. As an example, records of pressure values of the first zone to be monitored Z1 and the second zone to be monitored Z2 are stored in the control center 2; and reading pressure value curves of the first zone to be monitored Z1 or/and the second zone to be monitored Z2 in a selected time period, and judging whether the inside of the gas distribution plate has a sign of leakage in advance according to the pressure value curves so as to prevent the leakage in the gas distribution plate.
In summary, the present invention provides an internal leakage monitoring system and method for a gas distribution plate, the internal leakage monitoring system includes a nozzle including a plurality of mutually independent areas to be monitored; a splitter having an inlet coupled to the process main gas, the splitter comprising a plurality of outlets; each outlet is communicated with each area to be monitored through each gas transmission pipeline; and each pressure monitoring device is respectively communicated with each to-be-monitored area so as to monitor the pressure of each to-be-monitored area. By utilizing the invention, the pressure monitoring device is additionally arranged at the gas outlet of the flow divider of the gas distribution disc of the machine table, so that the pressure in different independent areas to be monitored in the gas distribution disc of the machine table in the production process can be monitored in real time, the internal leakage of gas distribution can be found immediately according to the pressure fluctuation in the areas to be monitored, remedial measures can be taken in time, and the loss is reduced; by utilizing the invention, the pressure monitoring device is connected with the control center, and the control center controls the etching machine to stop immediately when the pressure in one or more to-be-monitored areas in the gas distribution disc of the machine fluctuates greatly in the production process, so that the direct scrapping of products can be prevented; by using the invention, the pressure curve in one or more to-be-monitored areas within a period of time can be read from the control center, and whether the inside of the gas distribution plate has the sign of internal leakage or not is judged in advance according to the change trend of the pressure value curve of the to-be-monitored area, so as to prevent the internal leakage of the gas distribution plate; by utilizing the invention, the position of the inner leakage of the gas distribution plate can be positioned according to the pressure change trend in two adjacent areas to be monitored, and the maintenance of operators is convenient. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value. The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. An internal leak monitoring system for a gas distribution plate, comprising:
the spray head comprises a plurality of mutually independent areas to be monitored;
a splitter having an inlet coupled to the process main gas, the splitter comprising a plurality of outlets;
each outlet is communicated with each area to be monitored through each gas transmission pipeline;
and each pressure monitoring device is respectively communicated with each to-be-monitored area so as to monitor the pressure of each to-be-monitored area.
2. The system of claim 1, wherein the showerhead comprises a clamping plate, an electrode plate mounted on a lower surface of the clamping plate, and a plurality of gaskets disposed between the clamping plate and the electrode plate; the washer isolates the spray head into a plurality of mutually independent areas to be monitored.
3. The system of claim 2, wherein the clamping plate has a plurality of first gas injection holes extending through upper and lower surfaces thereof, wherein the clamping plate portion corresponding to each zone to be monitored comprises at least one first gas injection hole; the electrode plate is provided with a plurality of second gas injection holes penetrating through the upper surface and the lower surface of the electrode plate, wherein the electrode plate part corresponding to each region to be monitored at least comprises one second gas injection hole.
4. The system of claim 2, wherein the clamping plate has a plurality of annular grooves for receiving the gaskets.
5. The system of claim 1, wherein said monitoring system further comprises a control center, an alarm device, and a control valve disposed between each of said pressure monitoring devices and each of said gas delivery lines; the control center is respectively connected with each pressure monitoring device and each control valve; the alarm device is connected with the control center and alarms when one or more pressure in the area to be monitored is abnormal; the control valve includes a solenoid valve.
6. The system of claim 1, wherein a process auxiliary gas inlet is disposed between the pressure monitoring device interface and the output port of each gas transmission pipeline, and the process auxiliary gas inlet is connected to a process auxiliary gas supply source.
7. The system of any of claims 1-6, wherein the showerhead has a shape comprising a circle; the sprayer sequentially comprises a first area to be monitored, a second area to be monitored and a third area to be monitored from the circle center to the circumference, wherein the first area to be monitored is circular, and the second area to be monitored and the third area to be monitored are circular.
8. The internal leakage monitoring method of the gas distribution plate is characterized in that the gas distribution plate comprises a spray head, a splitter and a plurality of gas transmission pipelines, the spray head comprises a plurality of mutually independent areas to be monitored, an inlet of the splitter is connected with process main gas, the splitter comprises a plurality of outlets, and each outlet is respectively communicated with each area to be monitored through each gas transmission pipeline; the monitoring method comprises the following steps:
a pressure monitoring device is arranged on each gas transmission pipeline;
injecting the process main gas into the reaction cavity of the gas distribution plate through a plurality of areas to be monitored of the gas distribution plate;
respectively monitoring the pressure value of each to-be-monitored area by using a pressure monitoring device, and uploading the pressure value of each to-be-monitored area to a control center;
and the control center judges whether the gas distribution plate internally leaks or not according to whether the received pressure values of one or more regions to be monitored are abnormal or not.
9. The method of claim 8, wherein the showerhead comprises a clamping plate and an electrode plate mounted on a lower surface of the clamping plate, and a plurality of gaskets are disposed between the clamping plate and the electrode plate to isolate the showerhead from the plurality of independent regions to be monitored.
10. The method of claim 8 further comprising the control center triggering an alarm device to alarm when the pressure in one or more of the zones to be monitored is abnormal.
11. The method of claim 8, further comprising storing a pressure value record for each of the zones to be monitored in the control center; and reading the pressure value curves of one or more to-be-monitored areas in a selected time period, and judging whether the inside of the gas distribution plate has the sign of internal leakage in advance according to the pressure value curves of the one or more to-be-monitored areas so as to prevent the internal leakage of the gas distribution plate.
12. The method of claim 8, wherein the step of the control center determining whether the gas distribution plate has an internal leakage according to the received pressure values of the one or more regions to be monitored comprises:
and comparing the pressure values of one or more to-be-monitored areas with a preset pressure value, and when the pressure values of one or more to-be-monitored areas are not in the preset pressure value range, the gas distribution plate has internal leakage.
13. The method for monitoring the internal leakage of the gas distribution plate as claimed in any one of claims 8 to 12, further comprising the step of controlling the machine to which the gas distribution plate belongs to be stopped by the control center when the internal leakage of the gas distribution plate exists.
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| CN201811041056.6A CN110890259A (en) | 2018-09-07 | 2018-09-07 | Internal leakage monitoring system and method for gas distribution plate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113205995A (en) * | 2021-05-08 | 2021-08-03 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device, method and semiconductor structure |
| TWI785406B (en) * | 2020-04-01 | 2022-12-01 | 台灣積體電路製造股份有限公司 | Ion implanter toxic gas delivery system and delivering methods thereof |
| US11569062B2 (en) | 2020-05-22 | 2023-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas delivery system for ion implanter |
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2018
- 2018-09-07 CN CN201811041056.6A patent/CN110890259A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI785406B (en) * | 2020-04-01 | 2022-12-01 | 台灣積體電路製造股份有限公司 | Ion implanter toxic gas delivery system and delivering methods thereof |
| US11527380B2 (en) | 2020-04-01 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implanter toxic gas delivery system |
| US11569062B2 (en) | 2020-05-22 | 2023-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas delivery system for ion implanter |
| TWI797540B (en) * | 2020-05-22 | 2023-04-01 | 台灣積體電路製造股份有限公司 | Ion implantation system and method of gas delivery for ion implantation |
| CN113205995A (en) * | 2021-05-08 | 2021-08-03 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device, method and semiconductor structure |
| CN113205995B (en) * | 2021-05-08 | 2022-04-08 | 长鑫存储技术有限公司 | Gas distribution device, plasma processing device, method and semiconductor structure |
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