CN119173998A - 用于消除管芯破碎的管芯边缘保护 - Google Patents

用于消除管芯破碎的管芯边缘保护 Download PDF

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Publication number
CN119173998A
CN119173998A CN202380033594.3A CN202380033594A CN119173998A CN 119173998 A CN119173998 A CN 119173998A CN 202380033594 A CN202380033594 A CN 202380033594A CN 119173998 A CN119173998 A CN 119173998A
Authority
CN
China
Prior art keywords
die
protection layer
wafer
sidewalls
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380033594.3A
Other languages
English (en)
Chinese (zh)
Inventor
S·S·瓦达夫卡尔
C·H·芸
P·A·泰德萨尔
N·朴
D·D·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN119173998A publication Critical patent/CN119173998A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body

Landscapes

  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202380033594.3A 2022-04-27 2023-02-24 用于消除管芯破碎的管芯边缘保护 Pending CN119173998A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/661,029 2022-04-27
US17/661,029 US20230352423A1 (en) 2022-04-27 2022-04-27 Die edge protection to eliminate die chipping
PCT/US2023/063196 WO2023212440A1 (en) 2022-04-27 2023-02-24 Die edge protection to eliminate die chipping

Publications (1)

Publication Number Publication Date
CN119173998A true CN119173998A (zh) 2024-12-20

Family

ID=85706815

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380033594.3A Pending CN119173998A (zh) 2022-04-27 2023-02-24 用于消除管芯破碎的管芯边缘保护

Country Status (7)

Country Link
US (1) US20230352423A1 (enExample)
EP (1) EP4515592A1 (enExample)
JP (1) JP2025515434A (enExample)
KR (1) KR20250005122A (enExample)
CN (1) CN119173998A (enExample)
TW (1) TW202410179A (enExample)
WO (1) WO2023212440A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118843312A (zh) * 2023-04-23 2024-10-25 长江存储科技有限责任公司 存储器及其制作方法、存储系统

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7338836B2 (en) * 2003-11-05 2008-03-04 California Institute Of Technology Method for integrating pre-fabricated chip structures into functional electronic systems
US7566634B2 (en) * 2004-09-24 2009-07-28 Interuniversitair Microelektronica Centrum (Imec) Method for chip singulation
US20080197474A1 (en) * 2007-02-16 2008-08-21 Advanced Chip Engineering Technology Inc. Semiconductor device package with multi-chips and method of the same
US20080197478A1 (en) * 2007-02-21 2008-08-21 Wen-Kun Yang Semiconductor device package with die receiving through-hole and connecting through-hole and method of the same
US7525185B2 (en) * 2007-03-19 2009-04-28 Advanced Chip Engineering Technology, Inc. Semiconductor device package having multi-chips with side-by-side configuration and method of the same
US8183095B2 (en) * 2010-03-12 2012-05-22 Stats Chippac, Ltd. Semiconductor device and method of forming sacrificial protective layer to protect semiconductor die edge during singulation
US20120112336A1 (en) * 2010-11-05 2012-05-10 Guzek John S Encapsulated die, microelectronic package containing same, and method of manufacturing said microelectronic package
US9508623B2 (en) * 2014-06-08 2016-11-29 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices
US9711463B2 (en) * 2015-01-14 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Dicing method for power transistors
US9459500B2 (en) * 2015-02-09 2016-10-04 Omnivision Technologies, Inc. Liquid crystal on silicon panels and associated methods
JP2016192509A (ja) * 2015-03-31 2016-11-10 Koa株式会社 チップ抵抗器
EP3332429B1 (en) * 2015-08-03 2023-10-18 Lumileds LLC Semiconductor light emitting device with reflective side coating
US9892989B1 (en) * 2016-12-08 2018-02-13 Nxp B.V. Wafer-level chip scale package with side protection
CN108695265A (zh) * 2017-04-11 2018-10-23 财团法人工业技术研究院 芯片封装结构及其制造方法
CN109300794B (zh) * 2017-07-25 2021-02-02 中芯国际集成电路制造(上海)有限公司 封装结构及其形成方法
US11361970B2 (en) * 2017-08-17 2022-06-14 Semiconductor Components Industries, Llc Silicon-on-insulator die support structures and related methods
US10410978B2 (en) * 2018-01-24 2019-09-10 Sanken Electric Co., Ltd. Semiconductor wafer and method for forming semiconductor
US11164848B2 (en) * 2019-06-20 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method manufacturing the same
US11289396B2 (en) * 2019-09-29 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Sensing component encapsulated by an encapsulation layer with a roughness surface having a hollow region
EP3823016A1 (en) * 2019-11-12 2021-05-19 Infineon Technologies AG Semiconductor package with a semiconductor die
KR102218988B1 (ko) * 2020-04-21 2021-02-23 (주)라이타이저 Led칩 전사용 감광성 전사 수지, 그 감광성 전사 수지를 이용한 led칩 전사 방법 및 이를 이용한 디스플레이 장치의 제조 방법
US11393720B2 (en) * 2020-06-15 2022-07-19 Micron Technology, Inc. Die corner protection by using polymer deposition technology
US11552074B2 (en) * 2020-06-15 2023-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Package structures and methods of fabricating the same
US11450581B2 (en) * 2020-08-26 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit package and method
US12198998B2 (en) * 2021-12-09 2025-01-14 Nxp B.V. Dielectric sidewall protection and sealing for semiconductor devices in a in wafer level packaging process
US12228776B2 (en) * 2022-01-31 2025-02-18 Taiwan Semiconductor Manufacturing Co., Ltd. Package with integrated optical die and method forming same

Also Published As

Publication number Publication date
JP2025515434A (ja) 2025-05-15
KR20250005122A (ko) 2025-01-09
WO2023212440A1 (en) 2023-11-02
TW202410179A (zh) 2024-03-01
US20230352423A1 (en) 2023-11-02
EP4515592A1 (en) 2025-03-05

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