CN119127562A - 用于嵌入式ecc保护的方法及系统 - Google Patents

用于嵌入式ecc保护的方法及系统 Download PDF

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Publication number
CN119127562A
CN119127562A CN202411163946.XA CN202411163946A CN119127562A CN 119127562 A CN119127562 A CN 119127562A CN 202411163946 A CN202411163946 A CN 202411163946A CN 119127562 A CN119127562 A CN 119127562A
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CN
China
Prior art keywords
data
ecc
memory
address
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202411163946.XA
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English (en)
Chinese (zh)
Inventor
D·R·博杜安
R·D·索吉特拉
S·P·维萨利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
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Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN119127562A publication Critical patent/CN119127562A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/04—Addressing variable-length words or parts of words
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0877—Cache access modes
    • G06F12/0879—Burst mode
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/40—Bus structure
    • G06F13/4004—Coupling between buses
    • G06F13/4027—Coupling between buses using bus bridges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/30—Providing cache or TLB in specific location of a processing system
    • G06F2212/306—In system interconnect, e.g. between two buses
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/40—Specific encoding of data in memory or cache
    • G06F2212/403—Error protection encoding, e.g. using parity or ECC codes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Quality & Reliability (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
CN202411163946.XA 2018-12-11 2019-12-10 用于嵌入式ecc保护的方法及系统 Pending CN119127562A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862777993P 2018-12-11 2018-12-11
US62/777,993 2018-12-11
US16/590,515 2019-10-02
US16/590,515 US11119909B2 (en) 2018-12-11 2019-10-02 Method and system for in-line ECC protection
PCT/US2019/065416 WO2020123471A1 (en) 2018-12-11 2019-12-10 Method and system for in-line ecc protection
CN201980068709.6A CN112867993B (zh) 2018-12-11 2019-12-10 用于嵌入式ecc保护的方法及系统

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980068709.6A Division CN112867993B (zh) 2018-12-11 2019-12-10 用于嵌入式ecc保护的方法及系统

Publications (1)

Publication Number Publication Date
CN119127562A true CN119127562A (zh) 2024-12-13

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202411163946.XA Pending CN119127562A (zh) 2018-12-11 2019-12-10 用于嵌入式ecc保护的方法及系统
CN201980068709.6A Active CN112867993B (zh) 2018-12-11 2019-12-10 用于嵌入式ecc保护的方法及系统

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US (4) US11119909B2 (enExample)
EP (1) EP3895017B1 (enExample)
JP (2) JP7354253B2 (enExample)
CN (2) CN119127562A (enExample)
WO (1) WO2020123471A1 (enExample)

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US11119909B2 (en) * 2018-12-11 2021-09-14 Texas Instmments Incorporated Method and system for in-line ECC protection
US11249842B2 (en) * 2019-05-24 2022-02-15 Texas Instruments Incorporated Error correcting codes for multi-master memory controller
US12175363B2 (en) 2020-07-27 2024-12-24 Microchip Technology Inc. Regression neural network for identifying threshold voltages to be used in reads of flash memory devices
US11385961B2 (en) * 2020-08-14 2022-07-12 Micron Technology, Inc. Adaptive parity techniques for a memory device
US12393846B2 (en) 2020-08-20 2025-08-19 Microchip Technology Inc. Partitionable neural network for solid state drives
US12493778B2 (en) 2020-12-15 2025-12-09 Microchip Technology Inc. Method and apparatus for performing a neural network operation
US12014068B2 (en) 2021-04-27 2024-06-18 Microchip Technology Inc. System and method for double data rate (DDR) chip-kill recovery
US11561857B2 (en) * 2021-05-11 2023-01-24 Robert Bosch Gmbh Method for the secured storing of a data element to be stored by a computer program in an external memory
US11934696B2 (en) 2021-05-18 2024-03-19 Microchip Technology Inc. Machine learning assisted quality of service (QoS) for solid state drives
US11699493B2 (en) 2021-05-24 2023-07-11 Microchip Technology Inc. Method and apparatus for performing a read of a flash memory using predicted retention-and-read-disturb-compensated threshold voltage shift offset values
WO2022256220A1 (en) * 2021-06-01 2022-12-08 Microchip Technology Inc. Memory address protection
CN117480732B (zh) 2021-09-28 2025-05-02 微芯片技术股份有限公司 具有陷阱块管理的ldpc解码
US12124328B2 (en) * 2022-04-26 2024-10-22 Nxp Usa, Inc. Data processing system having a memory controller with inline error correction code (ECC) support
TWI823519B (zh) * 2022-08-15 2023-11-21 慧榮科技股份有限公司 資料儲存裝置以及非揮發式記憶體控制方法

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US6804799B2 (en) 2001-06-26 2004-10-12 Advanced Micro Devices, Inc. Using type bits to track storage of ECC and predecode bits in a level two cache
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TWI277869B (en) * 2005-08-23 2007-04-01 Via Tech Inc Architecture and method for storing data
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JP2007104708A (ja) * 2006-11-27 2007-04-19 Renesas Technology Corp データ処理方法
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Also Published As

Publication number Publication date
US12204443B2 (en) 2025-01-21
EP3895017A4 (en) 2022-06-22
US11119909B2 (en) 2021-09-14
JP7354253B2 (ja) 2023-10-02
US20210406171A1 (en) 2021-12-30
US20230393975A1 (en) 2023-12-07
JP2023169327A (ja) 2023-11-29
JP2022520150A (ja) 2022-03-29
EP3895017B1 (en) 2026-04-15
US20200183826A1 (en) 2020-06-11
CN112867993A (zh) 2021-05-28
US11726907B2 (en) 2023-08-15
JP7754612B2 (ja) 2025-10-15
CN112867993B (zh) 2024-09-03
WO2020123471A1 (en) 2020-06-18
EP3895017A1 (en) 2021-10-20
US20250165393A1 (en) 2025-05-22

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