CN1189692A - Interconnection system in semiconductor device - Google Patents
Interconnection system in semiconductor device Download PDFInfo
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- CN1189692A CN1189692A CN 98100187 CN98100187A CN1189692A CN 1189692 A CN1189692 A CN 1189692A CN 98100187 CN98100187 CN 98100187 CN 98100187 A CN98100187 A CN 98100187A CN 1189692 A CN1189692 A CN 1189692A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
An interconnection system in a semiconductor device comprises a Ti2N film having a lower resistivity and a higher thermal stability at a higher temperature compared to a TiN film. The Ti2N film is formed by rapid thermal annealing of a TiN film and a Ti film consecutively formed on an insulator film. The rapid thermal treating is effected in a nitrogen ambient at a substrate temperature of 700 to 900 DEG C for 30 to 120 seconds.
Description
The present invention relates to the interconnection system in a kind of semiconductor device, and be particularly related to a kind of Ti of having
2The new metal interconnected system of N compound.The invention still further relates to the method for making such based semiconductor device.
In the semiconductor device such as dynamic random access memory (DRAMs), integrated level and microminiaturization that figure that interconnection system is meticulousr and device element are higher attain full development.To meticulousr interconnection system figure, proposed respectively to make gate electrode or word line and bit line among the DRAM with the silicide on the polysilicon (multi-crystal silicification thing) and tungsten silicide.In this structure, usually the multi-crystal silicification thing is used for the contact that between metal-oxygenate-semiconductor field effect transistor (MOSFETs) source/drain region of bit line and formation memory unit, contacts and make capacitor.
Along with high integration more and microminiaturized further progress, the resistivity that tungsten silicide or multi-crystal silicification thing have occurred tends to cause the problem that the speed of service of semiconductor device descends, so, just wish to have a kind of resistivity lower and under higher temperature the higher new electric conducting material of stability.
Japanese patent gazette JP-A-7 (1995)-155775 proposes to replace tungsten silicide and multi-crystal silicification thing and can also form gate electrode or interconnection system in the metal-insulator-semiconductor field effect transistor (MISFETs) with TiN in the individual layer conductive layer as high melting point metal compound with titanium nitride (TiN).But, in this communique, the unsteadiness of TiN in heat treatment is not given detailed description.
Japanese patent gazette JP-A-59 (1984)-39049 proposes to use nitride, boride or the carbide of transition metal such as titanium (Ti), zirconium (Zr) and vanadium (V) to make interconnection system in the semiconductor device.Wherein also proposed and since the nitride of transition metal with direct contact of semiconductor layer in performance higher resistivity is arranged, between semiconductor layer and nitride, insert the pure transition metal of one deck with the reduction contact resistance.
The nitride of not mentioning transition metal among the JP-A-59-39049 has the resistivity higher than pure transition metal increases whole resistance.In addition, just do not speak of the unsteadiness of TiN when heat-treating therein as the speaking of TiN for example of nitride.
" solid film " 60 phases (1979) 237-247 page or leaf is shown by people such as W.J.Garcean tells in the literary composition that one deck TiN layer that people insert is the effective diffusing barrier of one deck for the intermetallic compound of avoiding forming Ti-Pt between Ti and Pt.And the resistivity of speaking of TiN changes along with the content of nitrogen: along with the atomic percentage of nitrogen increase between 0 and 35 the resistivity increase reach 100 microhms-centimetre about, and along with nitrogen content acutely drop to discontinuously increasing in a small amount more than percent 35 the atomicity 40 microhms-centimetre about.
In above-mentioned article, do not refer to the lower floor as interconnection system, and do not mention the thermal stability of TiN after the violent change of resistivity therein yet TiN.
A project of the present invention be to provide a kind of compare with the TiN film have low-resistivity more, high thermal stability and on dielectric film, have interconnection system in the new semiconductor device of superior adhesive force more.
Another object of the present invention is that a kind of method that forms above-mentioned interconnection system will be provided.
Semiconductor device provided by the invention comprises: cover the dielectric film of semiconductor chip on a slice semiconductor chip, one deck and be formed on the dielectric film and comprise one deck Ti
2An interconnection graph of N film.
The present invention also provides a kind of manufacturing to have a kind of method of semiconductor device of interconnection system, the step that it comprises has, and forms on one deck to cover the TiN film of semiconductor chip, form one deck Ti film and heat treatment TiN film and Ti film form one deck Ti by TiN film and Ti film on the TiN film
2The N film.
Semiconductor device according to the present invention also makes by method of the present invention obtains one and comprises one deck Ti
2The new interconnection system of N film, it has the thermal stability of lower resistivity and Geng Gao and the superior adhesive force on dielectric film.
From the following explanation of doing with reference to accompanying drawing, will obviously find out above and other objects of the present invention, characteristic and advantage.
Description of drawings
Figure 1A and 1B are the continuous production stage sectional view of the semiconductor device of first embodiment of the invention with an interconnection system;
Fig. 2 is illustrated in the curve chart that the sheet resistance of TiN film and Ti film changes with annealing temperature in rapid thermal annealing;
Fig. 3 A and 3B are the continuous production stage sectional view of the second embodiment of the invention semiconductor device that comprises an interconnection system;
Fig. 4 is illustrated in the curve chart that the sheet resistance of TiN/Ti/TiN film in rapid thermal annealing changes with annealing temperature;
Fig. 5 is the X-ray diffraction spectrum that carries out after the annealing of TiN/Ti/TiN film for the composition that shows the second embodiment of the invention interconnection system and crystal orientation.
Now, the present invention is done more specifically to describe, wherein represent the composition of similar formation with same or analogous label with reference to accompanying drawing.
Consult Figure 1A, have in the semiconductor device of an interconnection system, at first on silicon chip 11, form one deck by SiO in the manufacturing first embodiment of the invention
2The dielectric film of making 12.Then, by sputter or chemical vapor deposition (CVD) at whole SiO
2Form one deck cover layer TiN film on the surface of film, subsequently similarly by using sputter or CVD technology on the TiN film, to form one deck Ti film.
Subsequently, use dry etching or wet etching technique to make TiN film and Ti film two membranes stand selective etch one time, make and on dielectric film 12, stay the next one to comprise the interconnection graph of two-layer (TiN/Ti) structure of TiN film pattern 13 and Ti film pattern 14.In this example,, need not between these deposition technology, to change no matter TiN film and Ti film two membranes promptly are that sputter or CVD technology are carried out consecutive deposition with same deposition technology preferably.
Be that substrate temperature warp between about 700 ℃ and about 900 ℃ had been about 30 seconds and a period of time between about 120 seconds was carried out heat treatment or the formed device of rapid thermal annealing (RTA) to TiN film 13 and Ti film 14 in blanket of nitrogen shown in Fig. 1.Nitrogen in current heat treatment in TiN film 13 and the blanket of nitrogen diffuses into Ti film 14 and makes by TiN film 13 and the Ti film 14 two-layer one deck Ti that form as shown in Figure 1B
2 N film 15, wherein the TiN film 13 of institute's deposit and Ti film 14 among both Ti and the atomic ratio of nitrogen after annealing, become 2: 1 basically.The T of Xing Chenging like this
2 N film 15 is heat-staple and does not show its characteristic basically after through the several heat treatment of making the multilayer interconnection system variation of reverse is arranged.In Figure 1B, annealing after at dielectric film 12 and Ti
2May stay the TiN film of the low thickness of one deck between the N film 15.
In order to confirm advantage of the present invention, the present invention has carried out experimental study to the change of the sample sheet resistance of first embodiment, and gained the results are shown among Fig. 2, has wherein drawn sheet resistance with the variation of temperature curve that sample is carried out rapid thermal annealing.
Each sample have comprise one deck at 50 millimicrons on the bottom surface thick TiN films and one deck 250 millimicrons of thick Ti film two membranes on end face, two-layer all is coverlay.One group of sample stands the rapid thermal annealing (RTN) in 30 seconds in blanket of nitrogen under 700 ℃ to 900 ℃ temperature, another group is then similarly standing rapid thermal annealing (RTAr) under the temperature in argon atmospher.
Have an appointment the as shown in Figure 2 sheet resistance of 2 Ω/square of the two membranes of institute's deposit.The sheet resistance of film that sample produces that stands argon atmospher rapid thermal annealing (RTAr) is relatively poor, be increased to 7 Ω/square, the film that sample produced that stands blanket of nitrogen rapid thermal annealing (RTN) then maintains a sheet resistance that can give acceptance, it is about 4 Ω/square, thereby is suitable for the conducting film of doing among the DRAM.
Different result can be owing to blanket of nitrogen and argon atmospher caused.Specifically, the rapid thermal annealing that in argon atmospher two membranes is carried out makes the nitrogen that diffuses out from ground floor TiN film form low resistance t i
2N is insufficient.Yet, Ti and TiN film two parts, produced one deck T at least by making to Ti film thermal diffusion nitrogen from blanket of nitrogen and from the TiN film
2The N film.
Consult Fig. 3 A, have in the semiconductor device of interconnection system, on semiconductor chip 11, form one deck SiO in the manufacturing second embodiment of the invention
2Film 12 then forms a TiN film, Ti film and the 2nd TiN film thereon continuously by sputter or CVD.
Subsequently, carve wet technology with dry etching or wet method formed film is carried out selective etch, make and on dielectric film 12, stay the next one to include the interconnection graph of a TiN film pattern 16, Ti film pattern 17 and the 2nd TiN film pattern 18 three-deckers (TiN/Ti/TiN).
After this, under the temperature between 700 ℃ and 900 ℃ interconnection graph being carried out RTN or RtAr treatment step about 30 seconds, nitrogen is spread to Ti film pattern 17 from the first and second TiN film patterns 16 and 18.The result makes, except that the core 20 of Ti film pattern 17 remains the Ti film, all the other Ti film patterns 17 and the first and second TiN film patterns 16 and 18 all become Ti
2The figure 19 of N film.Because the major part of interconnection graph is by Ti
2N makes, thereby compares with the TiN film, and the interconnection graph that is produced has lower resistivity and the thermal stability of Geng Gao.
In above structure,, can also make the core that comprises Ti film 17 all become Ti at interior whole interconnection graph by rapid thermal annealing that carries out longer a period of time or the thickness of regulating Ti and TiN film
2N film 19.
Consult Fig. 4, excellent results is expressed in the experiment that sample carried out to second embodiment, each sample wherein has one deck 200 millimicrons of thick Ti films of 50 a millimicrons of thick TiN film, one decks and 50 millimicrons of the 2nd thick TiN films of one deck, and they all are coverlays.The rapid thermal annealing that sample is done is to carry out for 30 seconds in the argon atmospher under the temperature or the blanket of nitrogen between 700 ℃ and 900 ℃.As shown in Figure 4,, about 4 Ω/square, produce the sheet resistance peak value, then reach higher temperature and drop to about 3 Ω/square at about 100 ℃ along with temperature improves.The resistance bust shows the Ti that produces low-resistance in trilamellar membrane when the RTAr treatment temperature of the RTN treatment temperature more than 750 ℃ and about 800 ℃
2N.Decline under the lower temperature during this RTN of occurring in handles is because except spreading from having increased again from the nitrogen in the atmosphere the first and second TiN films.Some other sample has also stood to handle at the RTN of about 30 seconds to a period of time between about 120 seconds, thereby and owing to has increased nitrogen diffusion generation Ti
2N film so that the further decline that shows resistance.
Consult Fig. 5, show by the interconnection system of second embodiment being carried out the spectrum of X-ray diffraction observation.In Fig. 5, the angle of diffraction (2 θ) of light intensity structure after with respect to deposit and after the rapid thermal annealing of 700 ℃, timely 750 ℃, 800 ℃, 850 ℃ and 900 ℃ is plotted curve.Showing strong peak value corresponding to the film after the place's deposit of the Ti of (100) that originate in the Ti film and (002) orientation angle of diffraction, and when having improved the rapid thermal annealing temperature with annealing after Ti
2The corresponding angle of diffraction performance of N film has stronger peak value.In addition, when having improved temperature, at Ti
2(103), the performance of (112) and (200) orientation place in the middle of other orientation of N have stronger spectral line peak value.It further shown annealing after do not stay or produce Ti basically.
Because above embodiment just explains with example, thereby the present invention is not subjected to the restriction of above embodiment, for those the various modifications and all not unconventional scopes of the present invention of conversion that can be easy to therefrom make by the professional and technical personnel.
Claims (9)
1. a semiconductor device is characterized in that, it comprises that a slice semiconductor chip, one deck are covered with the dielectric film of described semiconductor chip and are formed on the described dielectric film and comprise one deck Ti
2The N film is at an interior interconnection graph.
2. according to the determined semiconductor device of claim 1, it is characterized in that described interconnection graph also is included in described dielectric film and described Ti
2One deck TiN film between the N film.
3. according to the determined semiconductor device of claim 1, it is characterized in that described interconnection graph has the sheet resistance of 4 Ω/below the square for 300 millimicrons interconnection graph thickness.
4. according to the determined semiconductor device of claim 1, it is characterized in that described interconnection graph is at described Ti
2One deck Ti film is arranged in the N film.
5. method of making semiconductor device, it is characterized in that, it comprises and forms the step that one deck TiN film covers on a slice semiconductor chip and form one deck Ti film on described TiN film that described TiN film of heat treatment and described Ti film make and form one deck Ti by described TiN film and described Ti film
2The N film.
6. according to the determined a kind of method of making semiconductor device of claim 5, it is characterized in that described heat treatment step is realized in blanket of nitrogen.
7. according to the determined a kind of method of making semiconductor device of claim 5, it is characterized in that described heat treatment is to carry out in a period of time between about 30 seconds and about 120 seconds under the temperature between 700 ℃ and 900 ℃.
8. according to the determined a kind of method of making semiconductor device of claim 5, it is characterized in that it also is included in the step that forms another layer TiN film on the described Ti film, wherein said heat treatment step also forms Ti from described another layer TiN film
2The N film.
9. according to the determined a kind of method of making semiconductor device of claim 8, it is characterized in that described heat treatment is not carried out exactly in blanket of nitrogen in argon atmospher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98100187 CN1189692A (en) | 1997-01-31 | 1998-02-04 | Interconnection system in semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP017972/97 | 1997-01-31 | ||
| CN 98100187 CN1189692A (en) | 1997-01-31 | 1998-02-04 | Interconnection system in semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN1189692A true CN1189692A (en) | 1998-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98100187 Pending CN1189692A (en) | 1997-01-31 | 1998-02-04 | Interconnection system in semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315178C (en) * | 2003-01-15 | 2007-05-09 | 三洋电机株式会社 | Method of mfg. semiconductor device |
| CN107910441A (en) * | 2017-11-29 | 2018-04-13 | 中国地质大学（武汉） | 200 orientation TiN electrodes and its application on resistive formula memory is prepared |
| CN114807847A (en) * | 2022-04-08 | 2022-07-29 | 西安热工研究院有限公司 | TiN film, preparation method and application of TiN film as infrared stealth film |
-
1998
- 1998-02-04 CN CN 98100187 patent/CN1189692A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315178C (en) * | 2003-01-15 | 2007-05-09 | 三洋电机株式会社 | Method of mfg. semiconductor device |
| CN107910441A (en) * | 2017-11-29 | 2018-04-13 | 中国地质大学（武汉） | 200 orientation TiN electrodes and its application on resistive formula memory is prepared |
| CN114807847A (en) * | 2022-04-08 | 2022-07-29 | 西安热工研究院有限公司 | TiN film, preparation method and application of TiN film as infrared stealth film |
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