CN118426266A - Projection-assisted dual-path laser interference lithography system and method - Google Patents
Projection-assisted dual-path laser interference lithography system and method Download PDFInfo
- Publication number
- CN118426266A CN118426266A CN202410558263.8A CN202410558263A CN118426266A CN 118426266 A CN118426266 A CN 118426266A CN 202410558263 A CN202410558263 A CN 202410558263A CN 118426266 A CN118426266 A CN 118426266A
- Authority
- CN
- China
- Prior art keywords
- path
- laser
- light
- interference lithography
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000025 interference lithography Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000010287 polarization Effects 0.000 claims abstract description 30
- 238000007493 shaping process Methods 0.000 claims abstract description 9
- 239000002086 nanomaterial Substances 0.000 claims description 15
- 238000001914 filtration Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims 1
- 238000001459 lithography Methods 0.000 abstract description 6
- 239000003086 colorant Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005162 X-ray Laue diffraction Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a projection-assisted dual-path laser interference lithography system and a method, which belong to the technical field of lithography, wherein the projection-assisted dual-path laser interference lithography system comprises a beam shaping assembly, a light propagation direction adjusting assembly, a total laser polarization angle adjusting element and a dual-path interference lithography assembly.
Description
Technical Field
The invention relates to the technical field of lithography, in particular to a projection-assisted dual-path laser interference lithography system and method.
Background
Micro-nano processing technology provides considerable opportunities for the development of functional nano structures, including plasmas, diffraction gratings, photoelectrons, computational imaging, super-surfaces, organic-inorganic hybrid materials and the like, and structural colors are physical colors, which are a color formed by interference or diffraction due to characteristic scattering of light generated by micro-nano structures on the surfaces of the materials, and common structural colors can be divided into grating diffraction structural colors, microsphere scattering structural colors, photonic crystal structural colors, film interference structural colors and the like. Thanks to the development of nanotechnology, structural colors play an important role in various fields, and in optics, structural colors can be used for manufacturing optical devices, optical memories, optical anti-counterfeiting and the like. Currently common nano-processing methods include contact lithography, electron beam exposure techniques, focused ion beam exposure techniques, and laser-assisted nano-processing techniques. For the former two, they can achieve fine engraving of the nanostructures, but both processing techniques are inefficient due to the pixel-by-pixel serial writing process. In contrast, the laser-assisted nano-processing technology can improve nano-processing efficiency, and the laser interference lithography technology is a laser-assisted nano-processing technology, and is an efficient method for manufacturing periodic nano-structures of wafer-level planar scale structures. During processing, the photoresist records a periodic pattern determined by the interference. Then, the pattern is transferred onto the substrate by wet etching or dry etching. Depending on the manner in which coherent light is obtained, laser interference lithography generally uses two optical configurations: mach-Zehnder interference lithography based on amplitude division and Lawster's mirror interference lithography based on wavefront division. Typically, a one-dimensional grating can be obtained by a single exposure through both of these conventional optical configurations. A two-dimensional grating pattern with a lattice can be produced by double exposure.
Miniaturization and diversification of nano devices are important development directions of nano technology, and photolithography technology plays a role of technological lead in preparation of nano devices, and also develops in the directions of large-area, rapid processing capability and preparation of complex structures. However, the existing photoetching technology has low processing efficiency for large-area structure colored drawing, and limits the development and research of nano devices.
Disclosure of Invention
The invention aims to provide a projection-assisted dual-path laser interference lithography system and a projection-assisted dual-path laser interference lithography method, which solve the technical problems.
In order to achieve the above object, the present invention provides a projection-assisted dual-path laser interference lithography system, which includes a laser, a beam shaping assembly, a light propagation direction adjusting assembly, a total laser polarization angle adjusting member, and a dual-path interference lithography assembly.
Preferably, the output laser beam of the laser is 325nm wavelength.
Preferably, the beam shaping assembly comprises a first lens, a filtering pinhole and a second lens, wherein the first lens, the filtering pinhole and the second lens are sequentially arranged, the first lens is arranged opposite to the laser and is used for focusing the collimated light beam, the filtering pinhole is used for filtering stray waves of the focused light beam, and the second lens is used for collimating the divergent light passing through the filtering pinhole.
Preferably, the light propagation direction adjusting assembly includes a first mirror and a second mirror, the first mirror being disposed opposite to the second lens, the first mirror being disposed opposite to the second mirror.
Preferably, the total laser polarization angle adjusting member is a half-wave plate and is disposed opposite to the second reflecting mirror, and is used for adjusting the polarization angle of light.
The dual-path interference lithography assembly comprises a beam splitting flat piece, and a first path assembly and a second path assembly are respectively arranged on two sides of the beam splitting flat piece; the output light beams of the first path component and the second path component are perpendicular to each other;
The first path component is used for forming a nano structure on the sample and comprises a first shielding plate, a third reflecting mirror and a path light polarization angle adjusting piece, wherein the first shielding plate, the third reflecting mirror and the path light polarization angle adjusting piece are arranged along the light propagation direction, the path light polarization angle adjusting piece is a half-wave plate and is used for adjusting the polarization state of incident light, and the first shielding plate is arranged opposite to one side of the beam splitting flat plate;
The second path component is used for patterning the nano structure and comprises a second shielding plate, a fourth reflecting mirror and a third lens, wherein the second shielding plate, the fourth reflecting mirror and the third lens are arranged along the light propagation direction, the third lens is used for projecting an image of an object onto the sample stage, and the second shielding plate is arranged opposite to the other side of the beam splitting flat sheet;
the path light polarization angle adjusting member and the third lens are disposed opposite to the Laude mirror.
A method based on the projection-assisted dual-path laser interference lithography system comprises the following specific steps:
Step S1: laser emitted by the laser sequentially passes through the beam shaping component, the light propagation direction adjusting component and the total laser polarization angle adjusting component to shape, adjust the propagation direction and adjust the polarization angle of light;
Step S2: the light beam passing through the step S1 is divided into two light beams through a beam splitting flat piece;
step S3: the two light beams respectively pass through the first path component and the second path component to form two mutually perpendicular light beams which do not interfere, and the photoetching of the nano structure on the sample and the patterning of the nano structure are respectively realized successively.
Therefore, the projection-assisted dual-path laser interference lithography system and the projection-assisted dual-path laser interference lithography method have the following beneficial effects: two mutually perpendicular and non-interference light beams are formed through arranging the dual-path interference lithography component, wherein the light beam of one path is used for laser interference lithography, a periodic nano structure is formed on the photoresist, the light beam of the other path is used for projection lithography, and patterns are subjected to lithography on the photoresist, so that the structural colored drawing of any pattern with a large area can be finally realized.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a schematic diagram of a projection-assisted dual-path laser interference lithography system according to the present invention;
fig. 2 is a schematic diagram of a single-path operation mode structure.
Reference numerals
1. A laser; 2. a first lens; 3. filtering pinholes; 4. a second lens; 5. a first mirror; 6. a second mirror; 7. a total laser polarization angle adjuster; 8. splitting and flattening; 9. a second shielding plate; 10. a fourth mirror; 11. a third lens; 12. a first shielding plate; 13. a third mirror; 14. a path light polarization angle adjuster; 15. a laude mirror.
Detailed Description
Examples
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, a projection-assisted dual-path laser interference lithography system includes a laser 1, a beam shaping assembly, a light propagation direction adjustment assembly, a total laser polarization angle adjustment member 7, and a dual-path interference lithography assembly.
The output laser beam of the laser 1 has a wavelength of 325 nm. The beam shaping assembly comprises a first lens 2, a filtering pinhole 3 and a second lens 4 which are sequentially arranged, wherein the first lens 2 is arranged opposite to the laser 1 and is used for focusing the collimated light beam, the filtering pinhole 3 is used for filtering stray waves of the focused light beam, and the second lens 4 is used for collimating the divergent light passing through the filtering pinhole 3. The light propagation direction adjusting assembly includes a first mirror 5 and a second mirror 6, the first mirror 5 being disposed opposite the second lens 4, the first mirror 5 being disposed opposite the second mirror 6. The total laser polarization angle adjusting member 7 is a half-wave plate and is disposed opposite to the second reflecting mirror 6 for adjusting the polarization angle of the light.
The dual-path interference lithography assembly comprises a beam splitting flat piece 8, and a first path assembly and a second path assembly are respectively arranged on two sides of the beam splitting flat piece 8. The first path component is used for photoetching an image on a sample, the first path component comprises a first shielding plate 12, a third reflecting mirror 13 and a path light polarization angle adjusting piece 14, the first shielding plate 12 is arranged along the light propagation direction, the path light polarization angle adjusting piece 14 is a half-wave plate and is used for adjusting the polarization state of incident light, and the first shielding plate 12 is arranged opposite to one side of the beam splitting flat plate 8. The second path component is used for generating a nano structure on the pattern, the second path component comprises a second shielding plate 9, a fourth reflecting mirror 10 and a third lens 11, the second shielding plate 9 is arranged opposite to the other side of the beam splitting flat piece 8, the path light polarization angle adjusting piece 14 and the third lens 11 are arranged opposite to the Laue's mirror 15, and the Laue's interferometer system is formed.
Two mutually perpendicular and non-interference light beams are formed through arranging the dual-path interference lithography component, wherein the light beam of one path is used for laser interference lithography, a periodic nano structure is formed on the photoresist, the light beam of the other path is used for projection lithography, and patterns are subjected to lithography on the photoresist, so that the structural colored drawing of any pattern with a large area can be finally realized. As shown in fig. 2, fig. 2 is a schematic structural diagram of a single-path operation mode, in fig. 2, the upper layer corresponds to a first path in the present embodiment, and in fig. 2, the lower layer corresponds to a second path in the present embodiment.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention and not for limiting it, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that: the technical scheme of the invention can be modified or replaced by the same, and the modified technical scheme cannot deviate from the spirit and scope of the technical scheme of the invention.
Claims (7)
1. A projection-assisted dual-path laser interference lithography system comprising a laser, characterized in that: the dual-path interference lithography system further comprises a beam shaping assembly, a light propagation direction adjusting assembly, a total laser polarization angle adjusting piece and a dual-path interference lithography assembly which are sequentially arranged.
2. A projection-assisted dual-path laser interference lithography system as claimed in claim 1, wherein: the output laser beam of the laser was 325nm wavelength.
3. A projection-assisted dual-path laser interference lithography system as claimed in claim 2, wherein: the beam shaping assembly comprises a first lens, a filtering pinhole and a second lens which are sequentially arranged, wherein the first lens is arranged opposite to the laser and used for focusing the collimated beam, the filtering pinhole is used for filtering stray waves of the focused beam, and the second lens is used for collimating the divergent light passing through the filtering pinhole to form the laser of the expanded beam.
4. A projection assisted dual path laser interference lithography system as claimed in claim 3, wherein: the light propagation direction adjusting assembly comprises a first reflecting mirror and a second reflecting mirror, wherein the first reflecting mirror is opposite to the second lens, and the first reflecting mirror is opposite to the second reflecting mirror.
5. The projection-assisted dual-path laser interference lithography system of claim 4, wherein: the total laser polarization angle adjusting piece is a half-wave plate and is arranged opposite to the second reflecting mirror and used for adjusting the polarization angle of light.
6. The projection-assisted dual-path laser interference lithography system of claim 5, wherein: the dual-path interference lithography assembly comprises a beam splitting flat piece, and a first path assembly and a second path assembly are respectively arranged on two sides of the beam splitting flat piece; the output light beams of the first path component and the second path component are perpendicular to each other;
The first path component is used for forming a nano structure on the sample and comprises a first shielding plate, a third reflecting mirror and a path light polarization angle adjusting piece, wherein the first shielding plate, the third reflecting mirror and the path light polarization angle adjusting piece are arranged along the light propagation direction, the path light polarization angle adjusting piece is a half-wave plate and is used for adjusting the polarization state of incident light, and the first shielding plate is arranged opposite to one side of the beam splitting flat plate;
the second path component is used for patterning the nano structure and comprises a second shielding plate, a fourth reflecting mirror and a third lens, wherein the second shielding plate, the fourth reflecting mirror and the third lens are arranged along the light propagation direction, the third lens is used for projecting an image of an object onto the sample stage, and the second shielding plate is arranged opposite to the other side of the beam splitting flat sheet; the path light polarization angle adjusting member and the third lens are disposed opposite to the Laude mirror.
7. A method of projection-assisted dual-path laser interference lithography system based on claim 6, wherein:
Step S1: laser emitted by the laser sequentially passes through the beam shaping component, the light propagation direction adjusting component and the total laser polarization angle adjusting component to shape, adjust the propagation direction and adjust the polarization angle of light;
Step S2: the light beam passing through the step S1 is divided into two light beams through a beam splitting flat piece;
step S3: the two light beams respectively pass through the first path component and the second path component to form two mutually perpendicular light beams which do not interfere, and the photoetching of the nano structure on the sample and the patterning of the nano structure are respectively realized successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410558263.8A CN118426266A (en) | 2024-05-07 | 2024-05-07 | Projection-assisted dual-path laser interference lithography system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410558263.8A CN118426266A (en) | 2024-05-07 | 2024-05-07 | Projection-assisted dual-path laser interference lithography system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118426266A true CN118426266A (en) | 2024-08-02 |
Family
ID=92310197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410558263.8A Pending CN118426266A (en) | 2024-05-07 | 2024-05-07 | Projection-assisted dual-path laser interference lithography system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118426266A (en) |
-
2024
- 2024-05-07 CN CN202410558263.8A patent/CN118426266A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI569106B (en) | Lighting optics, exposure devices, lighting methods and exposure methods | |
| KR100693024B1 (en) | Method for manufacturing a microstructure, exposure device, and electronic apparatus | |
| US9195069B2 (en) | Illumination optical apparatus, exposure apparatus, and device manufacturing method | |
| US20120082943A1 (en) | Diffractive photo masks and methods of using and fabricating the same | |
| CN2432001Y (en) | Laser interference photoetching system | |
| JPH08316124A (en) | Method and apparatus for projection exposing | |
| JPH08316125A (en) | Method and apparatus for projection exposing | |
| CN107643656A (en) | Laser double-beam interference lithography system | |
| KR20100030399A (en) | Light generating apparatus and method for controlling the same | |
| JP5391670B2 (en) | Manufacturing method of fine structure | |
| JP2019512729A (en) | Wire grid polarizer manufacturing method | |
| US10101652B2 (en) | Exposure method, method of fabricating periodic microstructure, method of fabricating grid polarizing element and exposure apparatus | |
| CN101614961B (en) | Partial annulus photon sieve and manufacturing method thereof | |
| JP6221849B2 (en) | Exposure method, method for manufacturing fine periodic structure, method for manufacturing grid polarizing element, and exposure apparatus | |
| CN108227063B (en) | Integrated polarization grating preparation system and method | |
| JP2006339359A (en) | Method of manufacturing fine structure, and electronic apparatus | |
| CN118426266A (en) | Projection-assisted dual-path laser interference lithography system and method | |
| JPH0611609A (en) | Exposure device | |
| CN115793117A (en) | Holographic exposure optical path system for manufacturing reflective volume Bragg grating and writing method thereof | |
| CN110967785A (en) | Method for preparing holographic grating with small aspect ratio by holographic interference recording means | |
| JP3189009B2 (en) | Exposure apparatus and method, and method of manufacturing semiconductor element | |
| JP2803434B2 (en) | Diffraction grating plotter | |
| JPH06267822A (en) | Fine pattern formation | |
| KR102693181B1 (en) | Lighting devices for EUV and their manufacturing methods using multilayer reflective zone plates | |
| JP3244076B2 (en) | Exposure apparatus and method, and method of manufacturing semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |