CN118402060A - 陶瓷电路基板、半导体装置、陶瓷电路基板的制造方法以及半导体装置的制造方法 - Google Patents

陶瓷电路基板、半导体装置、陶瓷电路基板的制造方法以及半导体装置的制造方法 Download PDF

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Publication number
CN118402060A
CN118402060A CN202380015201.6A CN202380015201A CN118402060A CN 118402060 A CN118402060 A CN 118402060A CN 202380015201 A CN202380015201 A CN 202380015201A CN 118402060 A CN118402060 A CN 118402060A
Authority
CN
China
Prior art keywords
metal
circuit
ceramic
substrate
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380015201.6A
Other languages
English (en)
Chinese (zh)
Inventor
上野俊英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Special Ceramic Materials Co ltd
Original Assignee
Toshiba Corp
Toshiba Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Materials Co Ltd filed Critical Toshiba Corp
Publication of CN118402060A publication Critical patent/CN118402060A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structure Of Printed Boards (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Ceramic Products (AREA)
CN202380015201.6A 2022-04-18 2023-04-07 陶瓷电路基板、半导体装置、陶瓷电路基板的制造方法以及半导体装置的制造方法 Pending CN118402060A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022067982 2022-04-18
JP2022-067982 2022-04-18
PCT/JP2023/014392 WO2023204054A1 (ja) 2022-04-18 2023-04-07 セラミックス回路基板、半導体装置、セラミックス回路基板の製造方法、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN118402060A true CN118402060A (zh) 2024-07-26

Family

ID=88419910

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380015201.6A Pending CN118402060A (zh) 2022-04-18 2023-04-07 陶瓷电路基板、半导体装置、陶瓷电路基板的制造方法以及半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20240304516A1 (https=)
EP (1) EP4513547A4 (https=)
JP (1) JPWO2023204054A1 (https=)
CN (1) CN118402060A (https=)
WO (1) WO2023204054A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786703A (ja) * 1993-09-10 1995-03-31 Toshiba Corp セラミックス回路基板
JP4557398B2 (ja) 2000-09-07 2010-10-06 株式会社東芝 電子素子
US8563869B2 (en) * 2005-08-29 2013-10-22 Hitachi Metals, Ltd. Circuit board and semiconductor module using this, production method for circuit board
JP6430382B2 (ja) * 2013-08-08 2018-11-28 株式会社東芝 回路基板および半導体装置
JP6341822B2 (ja) * 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
WO2018021473A1 (ja) * 2016-07-28 2018-02-01 株式会社 東芝 回路基板および半導体モジュール

Also Published As

Publication number Publication date
EP4513547A4 (en) 2026-04-29
JPWO2023204054A1 (https=) 2023-10-26
WO2023204054A1 (ja) 2023-10-26
US20240304516A1 (en) 2024-09-12
EP4513547A1 (en) 2025-02-26

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PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Country or region after: Japan

Address after: Japan

Applicant after: Toshiba Corp.

Applicant after: Special Ceramic Materials Co.,Ltd.

Address before: Japan

Applicant before: Toshiba Corp.

Country or region before: Japan

Applicant before: TOSHIBA MATERIALS Co.,Ltd.

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20260316

Address after: Japan

Applicant after: Special Ceramic Materials Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Applicant before: Toshiba Corp.

Country or region before: Japan

Applicant before: Special Ceramic Materials Co.,Ltd.