CN118401467A - 氮化硅粉末 - Google Patents

氮化硅粉末 Download PDF

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Publication number
CN118401467A
CN118401467A CN202280082352.9A CN202280082352A CN118401467A CN 118401467 A CN118401467 A CN 118401467A CN 202280082352 A CN202280082352 A CN 202280082352A CN 118401467 A CN118401467 A CN 118401467A
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China
Prior art keywords
silicon nitride
nitride powder
powder
mass
less
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Pending
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CN202280082352.9A
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English (en)
Chinese (zh)
Inventor
河合秀昭
石本龙二
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Tokuyama Corp
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Tokuyama Corp
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Publication of CN118401467A publication Critical patent/CN118401467A/zh
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    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
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    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
CN202280082352.9A 2021-12-22 2022-12-16 氮化硅粉末 Pending CN118401467A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-207697 2021-12-22
JP2021207697 2021-12-22
PCT/JP2022/046411 WO2023120422A1 (ja) 2021-12-22 2022-12-16 窒化ケイ素粉末

Publications (1)

Publication Number Publication Date
CN118401467A true CN118401467A (zh) 2024-07-26

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ID=86902645

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CN202280082352.9A Pending CN118401467A (zh) 2021-12-22 2022-12-16 氮化硅粉末

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US (1) US20250083958A1 (https=)
EP (1) EP4455078A4 (https=)
JP (1) JP7337304B1 (https=)
KR (1) KR20240125576A (https=)
CN (1) CN118401467A (https=)
WO (1) WO2023120422A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121605092A (zh) * 2023-07-28 2026-03-03 株式会社德山 氮化硅烧结体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643858A (en) * 1984-03-06 1987-02-17 Kyocera Corporation Process for preparation of sintered silicon nitride body
JPS6385050A (ja) * 1986-09-27 1988-04-15 日産自動車株式会社 窒化珪素質焼結体の製造方法
CN1142218A (zh) * 1994-12-28 1997-02-05 住友电气工业株式会社 氮化硅烧结体及其制造方法
US6143677A (en) * 1997-09-03 2000-11-07 Sumitomo Electric Industries, Ltd. Silicon nitride sinter having high thermal conductivity and process for preparing the same
WO2018110564A1 (ja) * 2016-12-12 2018-06-21 宇部興産株式会社 窒化ケイ素粉末および窒化ケイ素焼結体の製造方法
CN111727168A (zh) * 2018-02-28 2020-09-29 株式会社德山 氮化硅粉末的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194494B2 (ja) * 1992-07-29 2001-07-30 電気化学工業株式会社 窒化珪素粉末の製造方法
JP4256012B2 (ja) 1999-03-23 2009-04-22 修 山田 燃焼合成反応によるＢＮ、ＡｌＮ又はＳｉ３Ｎ４の製造方法
JP3648541B2 (ja) 2000-10-19 2005-05-18 独立行政法人産業技術総合研究所 高熱伝導窒化ケイ素セラミックス並びにその製造方法
JP2020023406A (ja) * 2016-12-12 2020-02-13 宇部興産株式会社 高純度窒化ケイ素粉末の製造方法
EP4067302A4 (en) 2019-11-28 2024-05-15 Tokuyama Corporation METHOD FOR PRODUCING A SILICON NITRIDE SINTERED BODY
JP7353994B2 (ja) * 2020-01-17 2023-10-02 株式会社トクヤマ 窒化ケイ素の製造方法
EP4174020A4 (en) * 2020-06-30 2025-07-02 Tokuyama Corp SINTERED SILICON NITRIDE SUBSTRATE
US12610461B2 (en) * 2020-08-12 2026-04-21 Tokuyama Corporation Laminate for circuit board

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643858A (en) * 1984-03-06 1987-02-17 Kyocera Corporation Process for preparation of sintered silicon nitride body
JPS6385050A (ja) * 1986-09-27 1988-04-15 日産自動車株式会社 窒化珪素質焼結体の製造方法
CN1142218A (zh) * 1994-12-28 1997-02-05 住友电气工业株式会社 氮化硅烧结体及其制造方法
US6143677A (en) * 1997-09-03 2000-11-07 Sumitomo Electric Industries, Ltd. Silicon nitride sinter having high thermal conductivity and process for preparing the same
WO2018110564A1 (ja) * 2016-12-12 2018-06-21 宇部興産株式会社 窒化ケイ素粉末および窒化ケイ素焼結体の製造方法
CN111727168A (zh) * 2018-02-28 2020-09-29 株式会社德山 氮化硅粉末的制造方法

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WO2023120422A1 (ja) 2023-06-29
EP4455078A4 (en) 2026-04-01
JP7337304B1 (ja) 2023-09-01
KR20240125576A (ko) 2024-08-19
EP4455078A1 (en) 2024-10-30
US20250083958A1 (en) 2025-03-13
JPWO2023120422A1 (https=) 2023-06-29

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