CN118380337A - Packaging structure of semiconductor wafer and forming method thereof - Google Patents
Packaging structure of semiconductor wafer and forming method thereof Download PDFInfo
- Publication number
- CN118380337A CN118380337A CN202410824834.8A CN202410824834A CN118380337A CN 118380337 A CN118380337 A CN 118380337A CN 202410824834 A CN202410824834 A CN 202410824834A CN 118380337 A CN118380337 A CN 118380337A
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- metal
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- semiconductor wafer
- packaging
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- 239000002070 nanowire Substances 0.000 claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 51
- 238000005468 ion implantation Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000000608 laser ablation Methods 0.000 claims description 7
- 238000001721 transfer moulding Methods 0.000 claims description 5
- 238000000748 compression moulding Methods 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 description 7
- -1 oxygen ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention relates to a packaging structure of a semiconductor wafer and a forming method thereof, which relate to the technical field of semiconductors, and in the forming method of the packaging structure of the semiconductor wafer, the specific process for forming a shielding layer is as follows: forming a first metal nanowire layer on the packaging resin layer, and depositing the first metal layer under a first pressure condition, wherein the first metal layer covers the first metal nanowire layer; and forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition, wherein the second pressure is larger than the first pressure, and the shielding layer formed by the method can effectively improve the bonding force between the shielding layer and the packaging resin layer, so that the shielding layer is prevented from being stripped.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a semiconductor wafer packaging structure and a method for forming the same.
Background
In the packaging process of semiconductor chips, the wafer from the wafer front process is cut into small wafers (semiconductor chips) through a dicing process, then the cut wafers are attached to corresponding positions of corresponding carrier boards through bonding materials, packaging treatment is carried out on packaging substrates, finished product testing is carried out after packaging is completed, and therefore qualified semiconductor packaging components are obtained, and then the qualified semiconductor packaging components are attached to a printed circuit board. In the process of manufacturing the semiconductor packaging member, in order to eliminate electromagnetic interference, a metal shielding layer is generally required to be arranged outside the packaging resin layer, and conventionally, a metal layer is directly deposited as the metal shielding layer through an electroplating process or an evaporation process, and the metal shielding layer is easily stripped due to poor binding force between the metal shielding layer and the packaging resin layer.
Disclosure of Invention
The present invention is directed to a semiconductor chip package and a method for forming the same, which overcomes the above-mentioned drawbacks of the prior art.
In order to achieve the above object, the present invention provides a method for forming a package structure of a semiconductor wafer, the method comprising the steps of: providing a temporary carrier plate, and arranging a plurality of semiconductor wafers on the temporary carrier plate. And carrying out packaging treatment on the plurality of semiconductor wafers to form a packaging resin layer, wherein the packaging resin layer covers the temporary carrier plate and the semiconductor wafers. And cutting the packaging resin layer to form a plurality of grooves, wherein one groove is arranged between every two adjacent semiconductor wafers. And forming a first metal nanowire layer on the packaging resin layer, wherein the first metal nanowire layer covers the upper surface of the packaging resin layer and the side surface of the groove. A first metal layer is deposited under a first pressure condition, the first metal layer overlying the first metal nanowire layer. Forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition to obtain a shielding layer, wherein the second pressure is larger than the first pressure. Then cutting and stripping the temporary carrier plate to form a plurality of packaging bodies, generating metal burrs at the peripheral edges of the packaging bodies, and then removing the metal burrs.
Preferably, the encapsulation resin layer is formed by a transfer molding, compression molding, lamination, spin coating, or spray coating process.
Preferably, the groove is a V-shaped groove, and the V-shaped groove is formed by a cutter cutting process.
Preferably, the first metal nanowire layer and the second metal nanowire layer are formed through a spin coating process or a spray coating process.
Preferably, the thickness of the first metal layer is smaller than the thickness of the second metal layer.
Preferably, the thickness of the first metal layer is 5-30 nm.
Preferably, the first pressure is 200-1000pa and the second pressure is 500-2000pa.
Preferably, the specific process for removing the metal burrs is as follows: and performing an oxygen ion implantation process or a nitrogen ion implantation process on the peripheral edge area of the packaging body, so that the metal burrs are oxidized or nitrided to form metal oxide burrs or metal nitride burrs, and then removing the metal oxide burrs or the metal nitride burrs through a laser ablation process.
The invention also provides a packaging structure of the semiconductor wafer, which is prepared by adopting the forming method.
Compared with the prior art, the packaging structure of the semiconductor wafer and the forming method thereof have the following beneficial effects: in the invention, the specific process for forming the shielding layer is as follows: forming a first metal nanowire layer on the packaging resin layer, and depositing the first metal layer under a first pressure condition, wherein the first metal layer covers the first metal nanowire layer; and forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition, wherein the second pressure is larger than the first pressure, and the shielding layer formed by the method can effectively improve the bonding force between the shielding layer and the packaging resin layer, so that the shielding layer is prevented from being stripped. In addition, when cutting treatment is carried out and the temporary carrier plate-shaped packaging body is stripped, metal burrs are generated at the peripheral edge of the packaging body, an oxygen ion implantation process or a nitrogen ion implantation process is carried out on the peripheral edge area of the packaging body, the metal burrs can be effectively nitrided or oxidized by controlling the ion implantation direction, the main structure of the shielding layer of the screen cannot be damaged, then the metal nitride burrs or the metal oxide burrs are removed through a laser ablation process, the burrs can be conveniently removed, further, the circuit of the packaging substrate can be effectively prevented from being damaged in the subsequent installation process, and the short circuit phenomenon is effectively avoided.
Drawings
Fig. 1 is a schematic structural diagram of a method for forming a package structure of a semiconductor wafer according to the present invention, in which a plurality of semiconductor wafers are disposed on a temporary carrier.
Fig. 2 is a schematic diagram of a structure of a package resin layer formed by performing a package process on a plurality of semiconductor wafers in a method for forming a package structure of a semiconductor wafer according to the present invention.
Fig. 3 is a schematic structural view of a method for forming a package structure of a semiconductor wafer according to the present invention, in which a package resin layer is cut to form a plurality of grooves.
Fig. 4 is a schematic structural diagram illustrating a shielding layer formed in the method for forming a package structure of a semiconductor wafer according to the present invention.
Fig. 5 is a schematic structural diagram of a package body after removing metal burrs in the method for forming a package structure of a semiconductor wafer according to the present invention.
Detailed Description
For a better understanding of the technical solution of the present invention, the following detailed description of the embodiments of the present invention refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Please refer to fig. 1-5. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1 to 5, the present embodiment provides a method for forming a package structure of a semiconductor wafer, the method for forming the package structure of the semiconductor wafer includes the following steps:
as shown in fig. 1, a temporary carrier 100 is provided, and a plurality of semiconductor wafers 101 are disposed on the temporary carrier 100.
In a specific embodiment, the temporary carrier 100 may be one of a glass carrier, a resin carrier, a metal carrier, or a ceramic carrier, and the semiconductor wafer 101 is bonded to the temporary carrier 100 by a temporary bonding material, which loses viscosity under the condition of light irradiation or heat treatment.
As shown in fig. 2, a plurality of the semiconductor wafers 101 are subjected to a packaging process to form a packaging resin layer 200, the packaging resin layer 200 covering the temporary carrier 100 and the semiconductor wafers 101.
In a specific embodiment, the encapsulation resin layer 200 is formed by a transfer molding, compression molding, lamination, spin coating, or spray coating process.
In a specific embodiment, the material of the encapsulating resin layer 200 is epoxy resin, and specifically, the encapsulating resin layer 200 is formed by a transfer molding process.
As shown in fig. 3, the encapsulation resin layer 200 is subjected to a dicing process to form a plurality of grooves 201, each having one groove 201 between adjacent semiconductor wafers 101.
In a specific embodiment, the groove 201 is a V-shaped groove, and the V-shaped groove is formed by a cutter cutting process.
As shown in fig. 4, a first metal nanowire layer is formed on the encapsulation resin layer 200, and covers the upper surface of the encapsulation resin layer and the side surfaces of the groove 201. A first metal layer is deposited under a first pressure condition, the first metal layer overlying the first metal nanowire layer. A second metal nanowire layer is formed on the first metal layer, followed by deposition of the second metal layer under a second pressure condition to obtain a shielding layer 300, wherein the second pressure is greater than the first pressure.
In a specific embodiment, the first metal nanowire layer and the second metal nanowire layer are formed through a spin coating process or a spray coating process. The thickness of the first metal layer is smaller than the thickness of the second metal layer. The thickness of the first metal layer is 5-30 nanometers. The first pressure is 200-1000pa, and the second pressure is 500-2000pa.
In a specific embodiment, the specific process of forming the first metal nanowire layer and the second metal nanowire layer through a spin coating process or a spray coating process is as follows: and spraying a suspension containing metal nanowires, wherein the metal nanowires are silver nanowires or copper nanowires, and the metal nanowires in the metal nanowire layers are mutually interwoven together to form a metal nanowire grid.
In a specific embodiment, the first metal layer and the second metal layer are formed by thermal evaporation, magnetron sputtering or electron beam evaporation, and the materials of the first metal layer and the second metal layer are one or more of copper, aluminum and silver. And depositing a first metal layer under a first pressure condition and depositing a second metal layer under a second pressure condition, wherein the first pressure is 200-1000pa, the second pressure is 500-2000pa, more specifically, the first pressure may be 200pa, 400pa, 600pa, 800pa or 1000pa, and the second pressure may be 500pa, 800pa, 1000pa, 1500pa or 2000pa, and the second pressure is more than the first pressure, more specifically, the first metal layer and the second metal layer may be copper, and the metal nanowire layers and the metal layers are tightly stacked together by the shielding layer 300 formed by the process, and in the deposition process of the second metal layer, the bonding tightness of the shielding layer 300 and the encapsulation resin layer 200 may be further improved due to the larger second pressure.
As shown in fig. 5, the temporary carrier 100 is then cut and peeled off to form a plurality of packages 400, and metal burrs are generated at the peripheral edges of the packages 400, and then removed.
In a specific embodiment, the specific process for removing the metal burrs is as follows: an oxygen ion implantation process or a nitrogen ion implantation process is performed on the peripheral edge region of the package body 400 such that the metal burr is oxidized or nitrided to form a metal oxide burr or a metal nitride burr, and then the metal oxide burr or the metal nitride burr is removed by a laser ablation process.
In a specific embodiment, the implantation ions of the oxygen ion implantation process or the nitrogen ion implantation process are oxygen ions or nitrogen ions, the implantation dosage of the implantation ions is 2×10 11-3×1013cm-2, and the implantation energy of the oxygen ions is 10-60 kev.
In a specific embodiment, the ion implantation dose of the ion implantation process is 3×1011cm-2、5×1011cm-2、8×1011cm-2、2×1012cm-2、6×1012cm-2、9×1012cm-2、1×1013cm-2 or 3×10 13cm-2, the ion implantation energy is adjusted to 10kev, 20kev, 30kev, 40kev, 50kev or 60 kev, and the ion implantation direction is adjusted so that the metal burrs are nitrided or oxidized, and the main structure of the shielding layer 300 is not damaged during the ion implantation process, for example, the implantation ion is an oxygen ion, the implantation dose of the oxygen ion is 2×10 12cm-2, the implantation energy of the oxygen ion is 30kev, and thus the metal burrs can be completely oxidized, and then the metal oxide burrs are removed by the laser ablation process.
As shown in fig. 5, the present invention further provides a semiconductor wafer package structure, where the semiconductor wafer package structure is formed by using the above-mentioned forming method.
In other embodiments, the method for forming a package structure of a semiconductor wafer according to the present invention includes the following steps:
Providing a temporary carrier plate, and arranging a plurality of semiconductor wafers on the temporary carrier plate. And carrying out packaging treatment on the plurality of semiconductor wafers to form a packaging resin layer, wherein the packaging resin layer covers the temporary carrier plate and the semiconductor wafers. And cutting the packaging resin layer to form a plurality of grooves, wherein one groove is arranged between every two adjacent semiconductor wafers. And forming a first metal nanowire layer on the packaging resin layer, wherein the first metal nanowire layer covers the upper surface of the packaging resin layer and the side surface of the groove. A first metal layer is deposited under a first pressure condition, the first metal layer overlying the first metal nanowire layer. Forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition to obtain a shielding layer, wherein the second pressure is larger than the first pressure. Then cutting and stripping the temporary carrier plate to form a plurality of packaging bodies, generating metal burrs at the peripheral edges of the packaging bodies, and then removing the metal burrs.
According to one embodiment of the present invention, the encapsulation resin layer is formed by a transfer molding, compression molding, lamination, spin coating, or spray coating process.
According to one embodiment of the invention, the groove is a V-groove formed by a cutter cutting process.
According to one embodiment of the present invention, the first metal nanowire layer and the second metal nanowire layer are formed through a spin coating process or a spray coating process.
According to one embodiment of the invention, the thickness of the first metal layer is smaller than the thickness of the second metal layer.
According to one embodiment of the invention, the first metal layer has a thickness of 5-30 nanometers.
According to one embodiment of the invention, the first pressure is 200-1000pa and the second pressure is 500-2000pa.
According to one embodiment of the invention, the specific process for removing the metal burrs is as follows: and performing an oxygen ion implantation process or a nitrogen ion implantation process on the peripheral edge area of the packaging body, so that the metal burrs are oxidized or nitrided to form metal oxide burrs or metal nitride burrs, and then removing the metal oxide burrs or the metal nitride burrs through a laser ablation process.
According to an embodiment of the present invention, the present invention further provides a semiconductor wafer package structure, where the semiconductor wafer package structure is formed by using the above-mentioned forming method.
In the invention, the specific process for forming the shielding layer is as follows: forming a first metal nanowire layer on the packaging resin layer, and depositing the first metal layer under a first pressure condition, wherein the first metal layer covers the first metal nanowire layer; and forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition, wherein the second pressure is larger than the first pressure, and the shielding layer formed by the method can effectively improve the bonding force between the shielding layer and the packaging resin layer, so that the shielding layer is prevented from being stripped. In addition, when cutting treatment is carried out and the temporary carrier plate-shaped packaging body is stripped, metal burrs are generated at the peripheral edge of the packaging body, an oxygen ion implantation process or a nitrogen ion implantation process is carried out on the peripheral edge area of the packaging body, the metal burrs can be effectively nitrided or oxidized by controlling the ion implantation direction, the main structure of the shielding layer of the screen cannot be damaged, then the metal nitride burrs or the metal oxide burrs are removed through a laser ablation process, the burrs can be conveniently removed, further, the circuit of the packaging substrate can be effectively prevented from being damaged in the subsequent installation process, and the short circuit phenomenon is effectively avoided.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A method for forming a packaging structure of a semiconductor wafer is characterized in that: the method for forming the packaging structure of the semiconductor wafer comprises the following steps:
providing a temporary carrier plate, and arranging a plurality of semiconductor wafers on the temporary carrier plate;
performing packaging treatment on a plurality of semiconductor wafers to form a packaging resin layer, wherein the packaging resin layer covers the temporary carrier plate and the semiconductor wafers;
cutting the packaging resin layer to form a plurality of grooves, wherein a groove is formed between every two adjacent semiconductor wafers;
Forming a first metal nanowire layer on the encapsulation resin layer, wherein the first metal nanowire layer covers the upper surface of the encapsulation resin layer and the side surface of the groove;
Depositing a first metal layer under a first pressure condition, wherein the first metal layer covers the first metal nanowire layer;
forming a second metal nanowire layer on the first metal layer, and then depositing the second metal layer under a second pressure condition to obtain a shielding layer, wherein the second pressure is larger than the first pressure;
then cutting and stripping the temporary carrier plate to form a plurality of packaging bodies, generating metal burrs at the peripheral edges of the packaging bodies, and then removing the metal burrs.
2. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the encapsulation resin layer is formed by a transfer molding, compression molding, lamination, spin coating, or spray coating process.
3. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the groove is a V-shaped groove, and the V-shaped groove is formed by cutting treatment of a cutter.
4. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the first metal nanowire layer and the second metal nanowire layer are formed through a spin coating process or a spray coating process.
5. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the thickness of the first metal layer is smaller than the thickness of the second metal layer.
6. The method of forming a package structure of a semiconductor wafer as claimed in claim 5, wherein: the thickness of the first metal layer is 5-30 nanometers.
7. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the first pressure is 200-1000pa, and the second pressure is 500-2000pa.
8. The method of forming a package structure of a semiconductor wafer as claimed in claim 1, wherein: the specific process for removing the metal burrs comprises the following steps: and performing an oxygen ion implantation process or a nitrogen ion implantation process on the peripheral edge area of the packaging body, so that the metal burrs are oxidized or nitrided to form metal oxide burrs or metal nitride burrs, and then removing the metal oxide burrs or the metal nitride burrs through a laser ablation process.
9. A packaging structure of a semiconductor wafer is characterized in that: the package structure of the semiconductor wafer is prepared and formed by adopting the forming method of any one of claims 1-8.
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| CN202410824834.8A CN118380337B (en) | 2024-06-25 | 2024-06-25 | Packaging structure of semiconductor wafer and forming method thereof |
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| CN202410824834.8A CN118380337B (en) | 2024-06-25 | 2024-06-25 | Packaging structure of semiconductor wafer and forming method thereof |
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| CN118380337B (en) | 2024-09-06 |
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