CN118355503A - 固体摄像装置 - Google Patents

固体摄像装置 Download PDF

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Publication number
CN118355503A
CN118355503A CN202280079502.0A CN202280079502A CN118355503A CN 118355503 A CN118355503 A CN 118355503A CN 202280079502 A CN202280079502 A CN 202280079502A CN 118355503 A CN118355503 A CN 118355503A
Authority
CN
China
Prior art keywords
wiring
solid
imaging device
state imaging
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280079502.0A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤真也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN118355503A publication Critical patent/CN118355503A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280079502.0A 2021-12-10 2022-10-17 固体摄像装置 Pending CN118355503A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021200728 2021-12-10
JP2021-200728 2021-12-10
PCT/JP2022/038565 WO2023105929A1 (ja) 2021-12-10 2022-10-17 固体撮像装置

Publications (1)

Publication Number Publication Date
CN118355503A true CN118355503A (zh) 2024-07-16

Family

ID=86730124

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280079502.0A Pending CN118355503A (zh) 2021-12-10 2022-10-17 固体摄像装置

Country Status (5)

Country Link
US (1) US20250040286A1 (https=)
JP (1) JPWO2023105929A1 (https=)
CN (1) CN118355503A (https=)
DE (1) DE112022005903T5 (https=)
WO (1) WO2023105929A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025173400A1 (ja) * 2024-02-16 2025-08-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5076679B2 (ja) * 2007-06-28 2012-11-21 ソニー株式会社 固体撮像装置及びカメラモジュール
US11961865B2 (en) * 2016-02-09 2024-04-16 Sony Group Corporation Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus
CN110739325B (zh) * 2018-07-18 2025-09-16 索尼半导体解决方案公司 受光元件以及测距模块
CN113302761B (zh) * 2019-02-15 2025-12-19 索尼半导体解决方案公司 摄像元件和摄像装置
JPWO2020246133A1 (https=) * 2019-06-07 2020-12-10
DE112020002994T5 (de) * 2019-06-21 2022-03-17 Sony Semiconductor Solutions Corporation Fotoelektrisches umwandlungselement, fotodetektor, fotodetektionssystem,elektronische einrichtung und mobiler körper

Also Published As

Publication number Publication date
JPWO2023105929A1 (https=) 2023-06-15
DE112022005903T5 (de) 2024-09-26
WO2023105929A1 (ja) 2023-06-15
US20250040286A1 (en) 2025-01-30

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