CN118299345A - Side-led high-heat-dissipation shell and preparation method thereof - Google Patents
Side-led high-heat-dissipation shell and preparation method thereof Download PDFInfo
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- CN118299345A CN118299345A CN202410489435.0A CN202410489435A CN118299345A CN 118299345 A CN118299345 A CN 118299345A CN 202410489435 A CN202410489435 A CN 202410489435A CN 118299345 A CN118299345 A CN 118299345A
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- lead
- integrated circuit
- ceramic cap
- circuit board
- heat dissipation
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 55
- 229910000679 solder Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000017525 heat dissipation Effects 0.000 claims abstract description 30
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 13
- 238000004806 packaging method and process Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 238000010344 co-firing Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 24
- 230000005855 radiation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical group C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The invention belongs to the technical field of microelectronic packaging, and particularly relates to a side-led high-heat-dissipation shell and a preparation method thereof. The invention comprises a ceramic cap and an integrated circuit board which are sequentially arranged from top to bottom, wherein the ceramic cap and the integrated circuit board are connected through a first low-temperature solder to form a closed space with a containing cavity inside; the integrated circuit board takes silicon carbide as a substrate; the side wall of the ceramic cap is provided with a lead wire for inputting/outputting signals or large current; the leads are connected to the PAD end of the integrated circuit board. The invention successfully solves the problems of thermal conductivity, heat dissipation distance, heat transfer interface and the like of the connecting material, and is suitable for occasions such as high heat dissipation, high integration, light weight, miniaturization, heat dissipation interface and the like.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging, and particularly relates to a side-lead high-heat-dissipation shell and a preparation method thereof.
Background
The device package comprises a metal shell package, a ceramic shell package, a plastic package product and a glass package product, and the two packages are not adopted by the shell with the general heat dissipation requirement because the heat dissipation efficiency of the plastic package product and the glass package product is extremely low.
The metal shell package is generally formed by welding or bonding a ceramic substrate/PCB (printed Circuit Board) to the bottom of an inner cavity of the metal shell, and welding or bonding a chip to the ceramic substrate/PCB, so that the chip can emit heat only through the interface between the chip and the ceramic substrate/PCB, the interface between the ceramic substrate/PCB and the metal shell and the metal bottom of the metal shell in sequence, and the heat dissipation efficiency of the chip is low due to a longer path. And the ceramic substrate assembled at present is beryllium oxide, the thermal conductivity is about 300W/(m.K), and even if the metal shell adopts tungsten copper (the thermal conductivity is about 200W/(m.K)) with the best thermal conductivity, the problem of low thermal conductivity still exists.
The ceramic shell package is to weld or bond the chip at the bottom of the ceramic inner cavity, and the ceramic shell package needs to radiate heat through the ceramic bottom plate during heat radiation, namely, a welding or bonding interface exists, so that the problem of heat radiation exists, the application in the field with higher heat radiation requirements cannot be met, the conventional chip generally adopts a silicon substrate, the heat conduction efficiency is low, the strength is low, and the heat radiation efficiency and the service life of the chip are influenced.
Therefore, there is a need for a side-lead high heat dissipation housing and a method of making the same that addresses the above issues.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a side-lead high-heat-dissipation shell and a preparation method thereof. The invention solves the interface problem, improves the heat dissipation efficiency and meets the high heat dissipation requirement of the device.
In order to achieve one of the above purposes, the present invention adopts the following technical scheme:
The side-leading high-heat-dissipation shell comprises a ceramic cap and an integrated circuit board which are sequentially arranged from top to bottom, wherein the ceramic cap is connected with the integrated circuit board through a first low-temperature solder to form a closed space with a containing cavity inside; the integrated circuit board takes silicon carbide as a substrate; the side wall of the ceramic cap is provided with a lead wire for inputting/outputting signals or large current; the leads are connected to the PAD end of the integrated circuit board.
Preferably, the lead is in an inverted U shape, and a plurality of through holes are formed in the side wall of the ceramic cap; the lead wire passes through the through hole, and one end of the lead wire is positioned at the outer side of the side wall of the ceramic cap, and the other end of the lead wire is positioned at the inner side of the ceramic cap and connected with the PAD end.
Preferably, the substrate comprises an integrated circuit area positioned in the center of the integrated circuit board, a metallization area for housing packaging and a PAD end, wherein the PAD end is positioned on the periphery of the integrated circuit area and connected with the integrated circuit area; the metallized area is positioned at the edge of the substrate and is in sealing connection with the opening end of the ceramic cap cavity.
Preferably, the surface of the PAD end and the surface of the metallized area are both provided with metallized layers, and the metallized layers are metal/oxide composite layers of aluminum, titanium nitride/titanium tungsten, nickel and gold.
Preferably, the ceramic cap is formed by stacking a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets and then co-firing at high temperature, and interconnection lines are formed between the plurality of layers of aluminum oxide sheets or the plurality of layers of aluminum nitride sheets by taking metal pieces as conductors.
Preferably, the thickness of the substrate is 0.3-3.0mm.
Preferably, the inner surface of the through hole is plated with nickel, and the lead is welded with the through hole through silver-copper solder; the material of the lead is copper-based alloy (such as oxygen-free copper).
Preferably, the outer surface of the ceramic cap is sequentially plated with a nickel layer and a gold layer, the nickel layer is used as a blocking layer and a protective layer, and the gold layer is convenient for subsequent assembly and beautifying of the shell.
Preferably, the lead adopts a vacuum low-temperature welding process (below 450 ℃) and is connected with the PAD end through a second low-temperature solder, so that device packaging and internal and external signal connection are realized; the first low-temperature solder and the second low-temperature solder are both one of gold-tin solder and lead-tin-silver solder.
In order to achieve the second purpose, a preparation method of the shell with the side led out and high heat dissipation is provided, and the preparation method comprises the following specific steps:
s1, pressing a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets, and co-firing at a high temperature (1800 ℃) to prepare an initial ceramic cap;
s2, etching or drawing the formed lead, and bending to prepare a bent lead;
s3, processing the solder by adopting a die punching or linear cutting mode;
S4, positioning the parts through a die, putting the parts into a high-temperature brazing furnace for brazing, and completing preparation of the ceramic cap under a nitrogen-hydrogen mixed atmosphere;
s5, prefabricating second low-temperature solder at the inner end of the lead in a printing and spot welding mode;
S6, preparing an integrated circuit board taking silicon carbide as a substrate by means of epitaxy, oxidization, photoetching, local sputtering or evaporation, plating enhancement, cutting and the like of the silicon carbide substrate;
and S7, completing connection of the lead and the integrated circuit board in a vacuum furnace, and packaging the integrated circuit board and the ceramic cap by adopting a first low-temperature solder.
The invention has the advantages that:
(1) The integrated circuit board replaces the original shell bottom plate, so that the chip has no heat dissipation interface, no heat dissipation resistance, no heat transfer distance and other problems when in use, and is suitable for occasions such as high heat dissipation, high integration, light weight, miniaturization, heat dissipation interface and the like.
(2) The silicon carbide is used as a chip substrate, the thermal conductivity can reach 460W/(m.K), and the thickness of the substrate can be made very thin under the condition of meeting the use requirement, so that the heat dissipation is more facilitated, and the development trend of thinning of electronic components is met; since the chip is directly part of the housing/device, the packing density is also greatly improved.
(3) The silicon carbide adopted by the invention has high hardness, good heat dissipation performance and low density (3.2 g/cm 3), the material belongs to a third-generation semiconductor material, the surface epitaxy, oxidization, photoetching and other processes can be used for preparing an integrated circuit product, the integrated circuit is used as a part of a shell, no interface problem exists, and the integrated circuit can be used as a heat dissipation surface, so that the heat dissipation capacity of a chip can be greatly improved, and the normal operation of the integrated circuit is ensured.
(4) The ceramic cap adopts high-temperature co-fired aluminum oxide or aluminum nitride material, and has the characteristics of light weight, insulation and matching with the expansion coefficient of the silicon carbide substrate. The lead is made of copper-based alloy material, can input/output large current, and is welded with the ceramic by silver-copper solder, so that the sealing requirement is met.
(5) And the integrated circuit board and the ceramic cap are packaged by adopting a vacuum low-temperature welding process, and the inner lead ends are connected with the external signals. Specifically, the ceramic cap, the oxygen-free copper bent lead and the like are processed, the ceramic cap and the oxygen-free copper lead are connected in a high-temperature brazing mode through die positioning, silver-copper solder is used for welding, and welding is completed under a nitrogen-hydrogen mixed atmosphere. The whole ceramic cap is simple and convenient to produce and operate, the production efficiency is improved, and the mass production is easy.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention.
Fig. 2 is a schematic diagram of an explosive structure according to the present invention.
Fig. 3 is a schematic view of the leadless cap of the present invention.
Fig. 4 is a schematic view of the structure of the cap with lead according to the present invention.
Fig. 5 is a schematic view of a lead structure according to the present invention.
Fig. 6 is a schematic view of a substrate structure according to the present invention.
The meaning of the reference symbols in the figures is as follows:
1-ceramic cap, 11-lead, 12-via, 2-integrated circuit board, 21-substrate, 22-integrated circuit region, 23-PAD terminal, 24-metallization region, 3-first low temperature solder.
Detailed Description
The present invention will be further described in detail with reference to the drawings and examples, wherein all other examples, which are obtained by a person skilled in the art without making any inventive effort, are included in the scope of the present invention.
Example 1
As shown in fig. 1-6, a high heat dissipation housing is led out from the side, and comprises a ceramic cap 1 and an integrated circuit board 2, wherein the ceramic cap 1 is inwards recessed to form an opening-shaped cavity, and is welded with the integrated circuit board 2 through a first low-temperature solder 3 to form a closed space.
Specifically, the integrated circuit board 2 uses silicon carbide as a substrate 21, and the thickness of the substrate 21 is 0.3-3.0mm; the surface of the substrate 21 is sequentially provided with an integrated circuit region 22, a PAD end 23 and a metallization region 24 from inside to outside, the integrated circuit region 22 is positioned in the central region of the substrate 21, the periphery of the integrated circuit region 22 is connected with the PAD end 23, and the metallization region 24 is positioned at the edge of the substrate 21. The ceramic cap 1 is sealingly connected to the metalized area 24.
Furthermore, two side walls of the ceramic cap 1 are respectively provided with a plurality of through holes 12, the middle part of a lead 11 for inputting/outputting signals/large currents penetrates through the through holes 12, the lead 11 is in an inverted U shape, the inner surface of the through holes 12 is plated with nickel, and the lead 11 is welded with the through holes 12 through silver-copper solder; the end head of the lead 11 positioned in the cavity is prefabricated with second low-temperature solder, and the lead 11 positioned in the ceramic cap 1 is connected with the PAD end 23 through the second low-temperature solder; the other end of the lead 11 is located outside the ceramic cap 1. The ceramic cap 1 is formed by stacking a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets and then co-firing at high temperature, wherein the plurality of layers of aluminum oxide sheets or the plurality of layers of aluminum nitride sheets are used as conductors to form interconnection lines through metal pieces.
Further, the surface of the PAD end 23 and the surface of the metallized region 24 are both provided with a metallized layer, which is a metal/oxide composite layer of aluminum, titanium nitride/titanium tungsten, nickel and gold. The lead 11 is made of oxygen-free copper. The outer surface of the ceramic cap 1 is plated with a nickel layer and a gold layer in sequence. The first low-temperature solder 3 and the second low-temperature solder are both one of gold-tin solder and lead-tin-silver solder.
Example 2
A preparation method of a shell with high heat dissipation property led out from the side surface comprises the following specific steps:
S1, pressing a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets to prepare an initial ceramic cap 1 by co-firing at 1800 ℃, as shown in FIG. 3;
S2, etching or drawing the formed lead 11, and bending to form a bent lead 11, as shown in FIG. 6;
s3, processing the solder by adopting a die punching or linear cutting mode;
S4, positioning the parts through a die, putting the parts into a high-temperature brazing furnace for brazing, and completing preparation of the ceramic cap 1 under a nitrogen-hydrogen mixed atmosphere, as shown in FIG. 4;
S5, prefabricating second low-temperature solder at the inner end of the lead 11 in a printing and spot welding mode;
S6, preparing the integrated circuit board 2 taking silicon carbide as the substrate 21 by means of epitaxy, oxidization, photoetching, local sputtering, plating increasing, cutting and the like of the silicon carbide substrate 21, as shown in FIG. 5;
S7, connecting the lead 11 with the integrated circuit board 2 in a vacuum furnace, and packaging the integrated circuit board 2 and the ceramic cap 1 by using the first low-temperature solder 3, as shown in FIG. 1.
The above embodiments are merely preferred embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a high heat dissipation shell is drawn forth to side which characterized in that: the integrated circuit board comprises a ceramic cap (1) and an integrated circuit board (2) which are sequentially arranged from top to bottom, wherein the ceramic cap (1) is connected with the integrated circuit board (2) through a first low-temperature solder (3) to form a closed space with a containing cavity inside; the integrated circuit board (2) has silicon carbide as a substrate (21); the side wall of the ceramic cap (1) is provided with a lead (11) for inputting/outputting signals; the leads (11) are connected to the PAD end (23) of the integrated circuit board (2).
2. The side-lead high heat dissipation housing of claim 1, wherein: the lead (11) is in an inverted U shape, and a plurality of through holes (12) are formed in the side wall of the ceramic cap (1); the lead (11) passes through the through hole (12), one end of the lead (11) is positioned at the outer side of the side wall of the ceramic cap (1), and the other end of the lead (11) is positioned at the inner side of the ceramic cap (1) and connected with the PAD end (23).
3. The side-lead high heat dissipation housing of claim 1, wherein: the substrate (21) comprises an integrated circuit region (22) positioned at the center of the integrated circuit board (2), a metallization region (24) for housing packaging and a PAD end (23), wherein the PAD end (23) is positioned on the periphery of the integrated circuit region (22) and is connected with the integrated circuit region (22); the metallized area (24) is positioned at the edge of the substrate (21), and the metallized area (24) is in sealing connection with the opening end of the containing cavity of the ceramic cap (1).
4. A side-lead high heat dissipation housing as recited in claim 3, wherein: the surface of the PAD end (23) and the surface of the metallization region (24) are both provided with metallization layers, and the metallization layers are metal/oxide composite layers of aluminum, titanium nitride/titanium tungsten, nickel and gold.
5. The side-lead high heat dissipation housing of claim 1, wherein: the ceramic cap (1) is formed by stacking a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets and then co-firing at a high temperature, and a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets form interconnection lines by taking metal pieces as conductors.
6. The side-lead high heat dissipation housing of claim 1, wherein: the thickness of the substrate (21) is 0.3-3.0mm.
7. The side-lead high heat dissipation housing of claim 2, wherein: the inner surface of the through hole (12) is plated with nickel, and the lead (11) is welded with the through hole (12) through silver-copper solder; the lead (11) is made of copper-based alloy.
8. The side-lead high heat dissipation housing of claim 1, wherein: the outer surface of the ceramic cap (1) is plated with a nickel layer and a gold layer in sequence.
9. The side-lead high heat dissipation housing of claim 2, wherein: the lead (11) is connected with the PAD end (23) through a second low-temperature solder by adopting a vacuum low-temperature welding process; the first low-temperature solder (3) and the second low-temperature solder are both one of gold-tin solder and lead-tin-silver solder, and the welding temperature of the vacuum low-temperature welding process is 125-450 ℃.
10. A method for preparing a side-lead high heat dissipation housing as defined in any one of claims 1-9, comprising the steps of:
S1, pressing a plurality of layers of aluminum oxide sheets or a plurality of layers of aluminum nitride sheets to prepare an initial ceramic cap (1) by high-temperature co-firing;
S2, etching or drawing the formed lead (11), and bending to obtain a bent lead (11);
s3, processing the solder by adopting a die punching or linear cutting mode;
S4, positioning the parts through a die, putting the parts into a high-temperature brazing furnace for brazing, and completing preparation of the ceramic cap (1) under a nitrogen-hydrogen mixed atmosphere;
s5, prefabricating second low-temperature solder at the inner end of the lead (11) in a printing and spot welding mode;
S6, preparing an integrated circuit board (2) taking silicon carbide as a substrate (21) by means of epitaxy, oxidization, photoetching, local sputtering, plating increasing, cutting and the like of the silicon carbide substrate (21);
And S7, connecting the lead wires (11) with the integrated circuit board (2) in a vacuum furnace, and packaging the integrated circuit board (2) and the ceramic cap (1) by adopting the first low-temperature solder (3).
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118299345A true CN118299345A (en) | 2024-07-05 |
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