CN118136503A - Nitride HEMT structure and manufacturing method thereof - Google Patents
Nitride HEMT structure and manufacturing method thereof Download PDFInfo
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- 238000003795 desorption Methods 0.000 claims abstract description 94
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims description 29
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- 239000004065 semiconductor Substances 0.000 abstract description 4
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- 229910002704 AlGaN Inorganic materials 0.000 description 66
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 63
- 229910002601 GaN Inorganic materials 0.000 description 48
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Abstract
The application provides a nitride HEMT structure and a manufacturing method thereof, and relates to the technical field of semiconductors. Firstly, providing a substrate, growing a buffer layer based on the surface of the substrate, then growing a channel layer based on one side of the buffer layer, which is far away from the substrate, then growing a barrier layer based on one side of the channel layer, which is far away from the substrate, and performing high-temperature desorption treatment to improve the aluminum component value in the barrier layer, wherein the depth of microcracks in the barrier layer is less than half of the thickness of the barrier layer, and finally manufacturing a grid electrode, a source electrode and a drain electrode based on one side of the barrier layer, which is far away from the substrate. The nitride HEMT structure and the manufacturing method thereof have the advantage of improving working current.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a nitride HEMT structure and a manufacturing method thereof.
Background
The GaN material has the advantages of large forbidden bandwidth, stable breakdown electric field strength and chemical property, and the like, and is one of the preferred materials of high-temperature and high-power electronic devices. Particularly, with the vigorous development of electrification and informatization of new energy automobiles, clean energy power generation, data centers and the like, the requirement for large-scale application of GaN power electronic devices with high efficiency and high power is urgent.
The GaN HEMT (High electron mobility transistor ) can realize high current and high switching speed in the application of power electronic devices due to the existence of the 2DEG with high electron concentration and high electron drift speed, and has the great advantages of voltage resistance, high power and high efficiency compared with the traditional Si-based device, and is the key direction of current research and industrialization.
In order to improve the working current of an electronic device, the two-dimensional electron gas concentration of the GaN HEMT needs to be improved, and the Al component of an AlGaN barrier layer at a GaN/AlGaN hetero-interface is generally increased, but the increase of the Al component can cause larger lattice mismatch with a GaN channel to generate epitaxial cracking of the barrier layer, so that the device is poor, and the increase of the Al component of the barrier layer has limitation.
In summary, the prior art has the problem that the barrier layer Al component of the GaN HEMT is low.
Disclosure of Invention
The application aims to provide a nitride HEMT structure and a manufacturing method thereof, which are used for solving the problem that the Al component in a barrier layer of a GaN HEMT in the prior art is lower.
In order to achieve the above object, the technical scheme adopted by the embodiment of the application is as follows:
In a first aspect, an embodiment of the present application provides a method for manufacturing a nitride HEMT structure, where the method includes:
Providing a substrate;
Growing a buffer layer based on the surface of the substrate;
Growing a channel layer based on a side of the buffer layer remote from the substrate;
growing a barrier layer on the side, far away from the substrate, of the channel layer and performing high-temperature desorption treatment to improve the aluminum component value in the barrier layer, wherein the depth of microcracks in the barrier layer is lower than one half of the thickness of the barrier layer;
A gate, a source, and a drain are fabricated based on a side of the barrier layer remote from the substrate.
Optionally, the step of growing a barrier layer based on a side of the channel layer away from the substrate and performing a high temperature desorption process includes:
growing a barrier layer on the side of the channel layer away from the substrate;
and annealing the barrier layer.
Optionally, the barrier layer includes a plurality of sub-layers, and the step of growing the barrier layer based on a side of the channel layer away from the substrate and performing high temperature desorption treatment includes:
And after each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to different desorption conditions so as to gradually increase the numerical value of the aluminum components of the sub-layers along the direction away from the substrate.
Optionally, after each sub-layer is grown, the step of performing high-temperature desorption on the sub-layer according to different desorption conditions includes:
After each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to the same desorption temperature, desorption pressure, desorption flow and different annealing time; wherein the annealing time of each sub-layer gradually increases in a direction away from the substrate.
Optionally, after each sub-layer is grown, the step of performing high-temperature desorption on the sub-layer according to different desorption conditions includes:
After each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to the same desorption pressure, desorption flow, annealing time and different desorption temperatures; wherein the desorption temperature of each sub-layer gradually increases in a direction away from the substrate.
Optionally, the barrier layer includes a plurality of sub-layers, and the step of growing the barrier layer based on a side of the channel layer away from the substrate and performing high temperature desorption treatment includes:
sequentially growing each sub-layer, and after each sub-layer grows, carrying out high-temperature desorption on the sub-layer according to the same desorption conditions; wherein the aluminum component content of the grown sub-layer gradually increases along the direction away from the substrate.
Optionally, the aluminum composition values of the plurality of sub-layers increase non-linearly in a direction away from the substrate.
Optionally, before the step of growing a channel layer based on a side of the buffer layer remote from the substrate, the method further comprises:
growing a semi-insulating layer based on a side of the buffer layer remote from the substrate;
the step of growing a channel layer on the side of the buffer layer remote from the substrate comprises:
A channel layer is grown based on a side of the semi-insulating layer remote from the substrate.
Optionally, the step of fabricating the gate, the source and the drain based on a side of the barrier layer remote from the substrate comprises:
Manufacturing a source electrode and a drain electrode on the basis of one side, far away from the substrate, of the barrier layer, wherein the source electrode and the drain electrode form ohmic contact with the barrier layer;
And manufacturing a grid electrode on the basis of one side, far away from the substrate, of the barrier layer, wherein the grid electrode and the barrier layer form Schottky contact, and the grid electrode is positioned between the source electrode and the drain electrode.
On the other hand, the embodiment of the application also provides a nitride HEMT structure, which is manufactured by the method and comprises the following steps:
A substrate;
a buffer layer located on a surface of the substrate;
a channel layer located on a side of the buffer layer remote from the substrate;
A barrier layer located on a side of the channel layer remote from the substrate;
A gate, a source, and a drain on a side of the barrier layer remote from the substrate.
Compared with the prior art, the application has the following beneficial effects:
The application provides a nitride HEMT structure and a manufacturing method thereof, wherein a substrate is provided firstly, a buffer layer is grown based on the surface of the substrate, a channel layer is grown based on one side of the buffer layer, which is far away from the substrate, a barrier layer is grown based on one side of the channel layer, which is far away from the substrate, and high-temperature desorption treatment is carried out, so that the aluminum component value in the barrier layer is improved, the depth of microcracks in the barrier layer is lower than one half of the thickness of the barrier layer, and finally a grid electrode, a source electrode and a drain electrode are manufactured based on one side of the barrier layer, which is far away from the substrate. When the barrier layer is grown, the high-temperature desorption mode is adopted to raise the numerical value of the aluminum component in the barrier layer, so that the two-dimensional electron gas concentration in the whole nitride HEMT structure is raised, and the purpose of raising the working current of the nitride HEMT structure can be achieved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a HEMT device in the prior art.
Fig. 2 is an exemplary flowchart of a method for fabricating a nitride HEMT structure according to an embodiment of the present application.
Fig. 3 is an AFM scan of an annealed AlGaN surface provided by an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a channel layer and a barrier layer according to an embodiment of the present application.
Fig. 5 is a schematic diagram of a first structure of a desorbed barrier layer according to an embodiment of the present application.
Fig. 6 is a schematic diagram of a second structure of a desorbed barrier layer according to an embodiment of the present application.
Fig. 7 is a schematic diagram of a third structure of a desorbed barrier layer according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of a nitride HEMT device according to an embodiment of the present application.
Fig. 9 is another schematic structural diagram of a nitride HEMT device according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
Gallium nitride high electron mobility transistor GaN HEMT (High Electron Mobility Transistors) is representative of Wide Bandgap (WBG) power semiconductor devices, which have great potential for high frequency power applications. GaN materials have higher electron mobility, saturated electron velocity, and breakdown electric field than Si and SiC.
Currently, gallium nitride high electron mobility transistors are typically AlGaN/GaN heterojunction devices that form AlGaN/GaN heterojunction by vapor deposition or molecular beam epitaxy of an AlGaN layer on the GaN layer. The GaN semiconductor material mainly comprises two non-centrosymmetric crystal structures of wurtzite and sphalerite structures.
Of these two structures, wurtzite structure has lower symmetry, and when no external stress condition is applied, positive and negative charge centers in GaN crystal are separated, and polarization phenomenon is generated in the direction along the polar axis, which is called spontaneous polarization effect of GaN. Under the external stress, the crystal is stressed to generate lattice deformation, so that positive and negative charges in the crystal are separated, an electric field is formed in the crystal, polarized charges are induced on the surface of the crystal, and a piezoelectric effect is generated. As the piezoelectric polarization and the spontaneous polarization electric field have the same direction, polarization charges are induced at the junction of the heterojunction interface under the action of the electric field.
Since AlGaN materials have a wider band gap than GaN materials, when equilibrium is reached, the energy band at the interface of the heterojunction is bent, resulting in discontinuity of the conduction band and the valence band, and a triangular potential well is formed at the heterojunction interface. Specifically, on the GaN side, the conduction band bottom EC is already below the fermi level EF, so there will be a large number of electrons accumulated in the triangular potential well. At the same time, the high barrier on the side of the wide bandgap AlGaN makes it difficult for electrons to surmount the potential well, and electrons are confined to move laterally in a thin layer of interface, known as a two-dimensional electron gas (2 DEG).
The structure of a common AlGaN/GaN HEMT device is shown in fig. 1, wherein a channel layer is generally made of GaN material, a barrier layer is generally made of AlGaN material, a drain-source voltage V DS enables a transverse electric field to be generated in the channel, and under the action of the transverse electric field, two-dimensional electron gas is transported along a heterojunction interface to form drain output current I DS. The grid electrode and the AlGaN barrier layer are in Schottky contact, the depth of a potential well in the AlGaN/GaN heterojunction is controlled through the size of the grid voltage V GS, and the size of the two-dimensional electron gas surface density in a channel is changed, so that the drain electrode output current in the channel is controlled.
As described in the background art, in order to increase the working current of the HEMT device, the two-dimensional electron gas concentration of the GaN HEMT device needs to be increased, and the higher the Al component of the AlGaN barrier layer at the GaN/AlGaN hetero interface is, the higher the two-dimensional electron gas concentration of the GaN HEMT device is, so that the purpose of increasing the two-dimensional electron gas concentration of the GaN HEMT device is generally achieved by adopting a manner of increasing the Al component in the AlGaN barrier layer. However, when the AlGaN barrier layer grows, the increase of the Al composition causes larger lattice mismatch between the AlGaN barrier layer and the GaN channel layer, so that the barrier layer is cracked in an epitaxial manner, and the device is poor, so that the increase of the Al composition of the barrier layer has a limitation.
In addition, the purpose of improving the working current of the HEMT device can be achieved by increasing the gate width of the device, but the mode can increase the area of the device, improve the cost of the device, influence the mobility of channel carriers and influence the reliability of the device.
In summary, the problem of high difficulty in improving the working current of the GaN HEMT device exists in the prior art.
In order to solve the problems, the embodiment of the application provides a manufacturing method of a nitride HEMT structure, which improves the Al component in an AlGaN barrier layer through a high-temperature desorption process, thereby achieving the purpose of improving the working current of an HEMT device.
The following is an exemplary description of a method for fabricating a nitride HEMT structure according to the present application:
As an alternative implementation, referring to fig. 2, the method includes:
S102, providing a substrate.
And S104, growing a buffer layer based on the surface of the substrate.
And S106, growing a channel layer based on the side of the buffer layer, which is far away from the substrate.
And S108, growing a barrier layer on one side of the channel layer, which is far away from the substrate, and performing high-temperature desorption treatment to improve the aluminum component value in the barrier layer, wherein the depth of microcracks in the barrier layer is lower than one half of the thickness of the barrier layer.
S110, manufacturing a grid electrode, a source electrode and a drain electrode on the basis of one side of the barrier layer, which is far away from the substrate.
The present application is not limited to specific materials of each hierarchical structure, and for example, sapphire, silicon, and silicon carbide may be used as the material of the substrate. The buffer layer is used as a growth template of the channel layer, so that the quality of the grown channel layer is better, and AlN, alGaN, gaN and other materials can be adopted. GaN can be used as the material of the channel layer, alGaN can be used as the material of the barrier layer, and mismatch exists between the channel layer and the barrier layer, so that strong 2DEG is generated at the interface of the channel layer and the barrier layer due to polarization. The grid electrode, the source electrode and the drain electrode are all made of metal materials, and the two-dimensional electron gas surface density in the channel can be changed through the grid voltage V GS, so that the output current of the drain electrode in the channel is controlled.
The applicant found that on the conventional GaN HEMT structure, an AlGaN barrier layer is grown on the GaN channel layer, and the concentration of the barrier layer is generally fixed, because the lattice of AlN is smaller than GaN, and the higher the composition of the AlGaN barrier layer, the larger the lattice constant of the AlGaN barrier layer is worse than that of the GaN channel layer, so that the 2DEG concentration of the GaN channel is increased, but the stress is released due to the occurrence of cracks in the AlGaN film caused by the accumulation of too much stress. In general, the crack will extend through the entire barrier layer, and the crack during such growth will be more pronounced and severe in the large-size substrates currently in use, since the large-size substrates will have greater absolute stresses due to the larger substrate size. Therefore, in order to increase the concentration of 2DEG and increase the Al composition of AlGaN, a large amount of stress is accumulated during the epitaxial growth, regardless of the growth mode with uniform concentration or the gradual growth mode with higher and higher concentration, so that cracks occur during the growth, and devices cannot be manufactured.
Moreover, the applicant also found that the Al component of AlGaN can be greatly improved by the high-temperature desorption process, so that the concentration of 2DEG can be greatly improved, and meanwhile, the mobility of the device is not greatly affected, and experimental data refer to the following table:
List one
As can be seen from Table one, compared with the prior art in which AlGaN barrier layer is directly grown, the desorption treatment is performed after the AlGaN barrier layer is grown, so that the concentration of 2DEG can be effectively improved, meanwhile, the change amount of the mobility of the 2DEG is not large, the mobility of the device is not greatly influenced, and the square resistance of the 2DEG is obviously reduced.
In addition, the AlGaN with high Al component formed by the desorption process can improve the concentration of the 2DEG, and meanwhile, the stress-induced cracks are not generated like the growth of the AlGaN with high Al component, but the strain is relieved by a surface microcrack mode. In the present application, the depth of the microcracks is less than one half the barrier layer thickness.
Referring to fig. 3, fig. 3 shows an AFM scan of the surface of an AlGaN barrier layer, in which micro-cracks with a depth of about 5-6nm, a width of about 30nm, and a length of about 100nm appear on the surface at the position of a white dotted line, and the depth of the micro-cracks does not exceed 6nm, and the performance of the device is not seriously affected by the corresponding barrier layer with a depth of about 20 nm.
Therefore, the AlGaN barrier layer is treated by the high-temperature desorption process, so that the numerical value of the Al component in the barrier layer is improved, the two-dimensional electron gas concentration in the whole nitride HEMT structure is improved, and the purpose of improving the working current of the nitride HEMT structure can be achieved.
The Al component of the present application refers to a molar ratio or a number ratio of Al elements in the AlGaN barrier layer. The term "high-temperature desorption" as used herein means desorption performed at a temperature of not lower than 500 ℃. The desorption of the application refers to that the Ga element in the AlGaN barrier layer is separated out by using an annealing process, so that the Al component value in the AlGaN barrier layer is improved.
The following describes a specific preparation process in the present application:
Firstly, a GaN buffer layer is grown on a substrate such as sapphire, silicon carbide and the like, the buffer layer comprises a nucleation layer on the substrate, the material of the nucleation layer comprises AlN, alGaN, gaN and the like, the nucleation layer is mainly used for optimizing the mismatch of a heterogeneous substrate and a GaN material and is beneficial to the growth of a subsequent high-quality GaN channel layer, the GaN HEMT on the sapphire substrate can use GaN, alN or AlGaN nucleation layers, and naturally also comprises a combination of the GaN buffer layer and the GaN buffer layer, the AlN or AlGaN nucleation layers are generally used for a SiC substrate, and the AlGaN buffer layer is generally grown after the AlN nucleation layers are generally used for a Si substrate.
In order to reduce the leakage of the GaN HEMT device, as an implementation manner, after the step of S104, the method further includes:
and S105, growing a semi-insulating layer on the side, away from the substrate, of the buffer layer.
The step of S106 includes:
a channel layer is grown based on the side of the semi-insulating layer remote from the substrate.
In general, the semi-insulating layer may be doped with a metal such as C or Fe, and the growth of the semi-insulating layer is equivalent to isolating the upper device portion from the lower buffer layer by the high-resistance semi-insulating layer, so that leakage caused by the problems of the buffer layer, such as a background carrier concentration or a large number of defects, a large number of defects at the interface between the buffer layer and the substrate, or poor insulation of the substrate itself, can be reduced.
It should be noted that the semi-insulating layer may be a layer independent of the buffer layer, i.e., after the buffer layer is grown, the C-doped or Fe-doped semi-insulating layer is grown again. The buffer layer can have better semi-insulating property by reducing the background carrier concentration of the buffer layer, so that the buffer layer is utilized to realize the effect of the semi-insulating layer.
And then growing a GaN channel layer through an epitaxial process, wherein the channel layer forms a hetero interface with the barrier layer, and a high-concentration and high-mobility 2DEG is formed at the hetero interface of the channel layer through piezoelectric polarization, spontaneous polarization effect and energy band bending.
In addition, an AlN insertion layer with the thickness of 1-3nm can be inserted between the barrier layer and the channel layer to reduce alloy scattering and improve the 2DEG limiting effect, so that the device performance is better.
It should be noted that, the HEMT structures provided by the application all adopt MOCVD equipment for growth, and generally adopt hydrogen (H2) carrier gas, trimethylgallium (TMGa) as Ga source, trimethylaluminum (TMAl) as Al source and ammonia (NH 3) as N source.
For the AlGaN barrier layer, the specific structure and aluminum component distribution after the high-temperature desorption treatment are not limited, and the application provides the following three possible implementation schemes for carrying out the high-temperature desorption treatment on the AlGaN barrier layer.
First, the barrier layer only comprises one layer, after the barrier layer grows on the surface of the channel layer, the aluminum component of the surface area of the barrier layer is lifted by annealing, and then the purpose of lifting the concentration of the 2DEG is achieved.
For example, an AlGaN barrier layer with an aluminum composition of about 20-30% and a thickness of 15-25nm is grown on the surface of the channel layer, as shown in FIG. 4,1 represents a GaN channel layer, 2 represents an AlGaN barrier layer with an aluminum composition of 25% and a thickness of 20nm, and the growth temperature is 1000-1080 ℃ and the reaction chamber is 100-300mbar. And then, the Al component of the surface layer of the barrier layer is improved by annealing, the estimated thickness of the surface layer of the Al component is improved to be about 1-5nm, and certain component change is presented due to preferential desorption of the surface, and finally, the surface layer with the component of about 50% is obtained at the surface, so that the 2DEG concentration of the device is improved, and the performance of the device is improved. The structure after detachment is shown in fig. 5, in which 1 represents a GaN channel layer, 2 represents an AlGaN barrier layer with an aluminum composition of 25% and a thickness of 15nm, 3 represents an AlGaN barrier layer after detachment with a thickness of slightly less than 5nm and an aluminum composition of 50%.
Therefore, the aluminum component on the surface of the AlGaN barrier layer can be greatly increased by the desorption process treatment, which is beneficial to improving the 2DEG concentration of the device.
Second, the barrier layer includes a plurality of sub-layers, and after one sub-layer is grown, the sub-layer is subjected to high temperature desorption according to different desorption conditions, so that the aluminum component values of the plurality of sub-layers become gradually larger in a direction away from the substrate.
The applicant found that the composition, annealing temperature and annealing time of the original AlGaN all affect the Al composition distribution in the AlGaN barrier layer after desorption.
On the basis, as an implementation mode, after each sub-layer grows, the sub-layer can be subjected to high-temperature desorption according to the same desorption temperature, desorption pressure, desorption flow and different annealing time; wherein the annealing time of each sub-layer gradually increases in a direction away from the substrate.
For example, firstly, MOCVD grows an AlGaN barrier layer with 20% Al component to be 5nm thick under the conditions of 1050 ℃ and 150mbar and high flow of ammonia to form a first sub-layer, and then annealing is carried out for 30s under the conditions of cooling to 1000 ℃ and 150mbar and low flow of ammonia (ammonia: hydrogen=1:6) to realize desorption of the first sub-layer. Then growing an AlGaN barrier layer with 20% of Al component at 1050 ℃ and 150mbar under the condition of high-flow ammonia gas in the MOCVD mode to be 5nm thick to form a second sub-layer; and then cooling to 1000 ℃, and annealing for 60 seconds under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6), so as to realize desorption of the second sub-layer. Then growing an AlGaN barrier layer with 20% of Al component at 1050 ℃ and 150mbar under the condition of high-flow ammonia gas in the thickness of 5nm in MOCVD to form a third sub-layer; then the temperature is reduced to 1000 ℃, and annealing is carried out for 100 seconds under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6). Finally, growing an AlGaN barrier layer with 20% of Al component at 1050 ℃ under the conditions of 150mbar and high flow ammonia gas in the MOCVD to form a third sub-layer, wherein the thickness of the AlGaN barrier layer is 5 nm; then, the temperature was lowered to 1000 ℃ and the annealing was performed under a small flow of ammonia gas (ammonia gas: hydrogen=1:6) for 150 seconds, thereby forming an AlGaN barrier layer with a varying Al composition.
As another implementation manner, after each sub-layer is grown, the sub-layer can be subjected to high-temperature desorption according to the same desorption pressure, desorption flow, annealing time and different desorption temperatures; wherein the desorption temperature of each sub-layer gradually increases in a direction away from the substrate.
For example, first, MOCVD grows an AlGaN barrier layer with 20% Al component to be 5nm thick at 1050 ℃ and 150mbar under the condition of large flow of ammonia gas to form a first sub-layer; then cooling to 1000 ℃, and annealing for 30s under the conditions of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6) to realize desorption of the first sublayer. Then MOCVD grows an AlGaN barrier layer with 20% of Al component to be 5nm thick at 1050 ℃ under the condition of 150mbar and high flow ammonia gas to form a second sub-layer; then the temperature is reduced to 1030 ℃ and the annealing is carried out under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6) for 30s. Then MOCVD grows an AlGaN barrier layer with 20% of Al component to be 5nm thick at 1050 ℃ under the condition of 150mbar and high flow ammonia gas to form a third sub-layer; then, the temperature was raised to 1060℃and annealing was performed under a small flow of ammonia (ammonia: hydrogen=1:6) for 30s. Finally, growing an AlGaN barrier layer with 20% of Al component by 5nm thickness under the conditions of 1050 ℃ and 150mbar and high flow ammonia gas by MOCVD to form a fourth sub-layer; then, the temperature was raised to 1090℃and an annealing was performed under a small flow of ammonia gas (ammonia gas: hydrogen=1:6) for 30 seconds, thereby forming an AlGaN barrier layer having a varying Al composition.
Secondly, the barrier layer comprises a plurality of sub-layers, each sub-layer is grown in sequence in the growth process, and after each sub-layer grows, the sub-layers are subjected to high-temperature desorption according to the same desorption conditions; wherein the aluminum component content of the grown sub-layer gradually increases along the direction away from the substrate.
For example, first, MOCVD grows an AlGaN barrier layer 5nm thick with 15% Al composition at 1050 ℃ and 150mbar under a high flow rate of ammonia (ammonia: hydrogen=1:1), forming a first sub-layer; then the temperature is reduced to 1000 ℃, and annealing is carried out for 30 seconds under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6). Growing an AlGaN barrier layer with 20% of Al component at 1050 ℃ and 150mbar under the condition of large flow of ammonia gas to form a second sub-layer, wherein the thickness of the AlGaN barrier layer is 5 nm; then the temperature is reduced to 1000 ℃, and annealing is carried out for 30 seconds under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6). Growing an AlGaN barrier layer with the thickness of 5nm and the Al component of 25% under the conditions of 1050 ℃ and 150mbar and high ammonia flow rate to form a third sub-layer; then the temperature is reduced to 1000 ℃, and annealing is carried out for 30 seconds under the condition of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6). Finally, growing an AlGaN barrier layer with the Al component of 30% under the conditions of 1050 ℃ and 150mbar and high flow ammonia gas to form a fourth sub-layer, wherein the thickness of the AlGaN barrier layer is 5 nm; then the temperature is reduced to 1000 ℃, and the annealing is carried out for 30 seconds under the conditions of 150mbar and small flow of ammonia (ammonia: hydrogen=1:6), thereby forming the AlGaN barrier layer with the Al component changed.
Of course, the above examples are merely examples, and in practical applications, the corresponding parameters may be adjusted, for example, the number of sub-layers, the thickness of the grown AlGaN barrier layer, the Al composition, etc., which are not limited herein.
Referring to fig. 6, a plurality of sub-layers may be formed on the trench layer by the above process, and the sub-layers gradually increase in Al composition value along the epitaxial growth direction. As shown in fig. 6, the AlGaN barrier layer may include a first sub-layer 11, a second sub-layer 12, a third sub-layer 13, and a fourth sub-layer 14,4 sub-layers arranged layer by layer.
Also, in one implementation, the aluminum composition values of the plurality of sub-layers increase non-linearly in a direction away from the substrate.
Wherein, as shown in fig. 7, for each sub-layer in the barrier layer, a desorption layer is formed after desorption. As shown in the figure, in the first sub-layer 11, it includes a barrier sub-layer A1 and a desorption sub-layer B1, in the second sub-layer 12, it includes a barrier sub-layer A2 and a desorption sub-layer B2, in the third sub-layer 13, it includes a barrier sub-layer A3 and a desorption sub-layer B3, and in the fourth sub-layer 14, it includes a barrier sub-layer A4 and a desorption sub-layer B4.
The nonlinear increase refers to that the Al components of a barrier sub-layer A1, a barrier sub-layer A2, a barrier sub-layer A3 and a barrier sub-layer A4 are gradually increased, the Al components of a desorption sub-layer B1, a desorption sub-layer B2, a desorption sub-layer B3 and a desorption sub-layer B4 are also gradually increased, but the Al component of the desorption sub-layer in the former sub-layer is larger than the Al component of the barrier sub-layer in the latter sub-layer in the adjacent two sub-layers, for example, the Al component of the desorption sub-layer B1 is larger than the Al component of the barrier sub-layer A2, the Al component of the desorption sub-layer B2 is larger than the Al component of the barrier sub-layer A3, and the Al component of the desorption sub-layer B3 is larger than the Al component of the barrier sub-layer A4.
On one hand, the mode can generate a bit of polarized electron distribution at the layering position of the barrier layer, and is favorable for optimizing the distribution of an electric field. Namely, polarized electrons are generated between the desorption sub-layer B1 and the barrier sub-layer A2, between the desorption sub-layer B2 and the barrier sub-layer A3, and between the desorption sub-layer B3 and the barrier sub-layer A4, so that the effect of the concentration of the 2DEG is improved, and the performance of the device is further improved. On the other hand, the distribution mode can lead the Al component at the joint of the AlGaN barrier layer and the GaN channel layer to be relatively low, and the situation that the barrier layer is cracked in an epitaxial way is not easy to occur. That is, the barrier layer A1 is directly connected to the GaN channel layer, and the Al composition of the barrier layer A1 is the lowest, so that epitaxial cracking of the barrier layer is unlikely to occur.
For the arrangement of the grid electrode, the source electrode and the drain electrode, the application provides the following arrangement modes:
Referring to fig. 8, the source and drain electrodes are typically disposed on the barrier layer etched to a certain depth, and a better ohmic contact is formed through the 2DEG of the interface, or may be directly disposed on the annealed barrier layer, as shown in fig. 1, but the electrode after the etching typically contacts better, and the gate electrode is disposed on the barrier layer. The source electrode and the drain electrode can be formed by combining at least two of Ti, al, ni, au, cr, pd, pt and TiN, and ohmic contact is formed by annealing; the gate electrode may be formed by combining at least two of Ni, au, al, pd, pt and W to form a schottky contact. The gate is arranged on the barrier layer, and the HEMT device is turned off and on under a certain gate bias, and of course, as shown in fig. 9, insulating layer materials such as AlN, siO2, siN and the like can be added between the gate and the barrier layer, and passivation layer materials such as SiO 2 or SiN and the like can be also made on the surface of the barrier layer.
Based on the implementation manner, the embodiment of the application also provides a nitride HEMT structure, which is manufactured by the method and comprises the following steps:
A substrate; a buffer layer located on a surface of the substrate; a channel layer located on a side of the buffer layer remote from the substrate; a barrier layer located on a side of the channel layer remote from the substrate; a gate, a source, and a drain on a side of the barrier layer remote from the substrate.
In summary, the present application provides a nitride HEMT structure and a method for fabricating the same, which includes providing a substrate, growing a buffer layer on the surface of the substrate, growing a channel layer on the side of the buffer layer away from the substrate, growing a barrier layer on the side of the channel layer away from the substrate, and performing high temperature desorption treatment to increase the aluminum component value in the barrier layer, wherein the depth of micro-cracks in the barrier layer is less than half the thickness of the barrier layer, and fabricating a gate, a source and a drain on the side of the barrier layer away from the substrate. When the barrier layer is grown, the high-temperature desorption mode is adopted to raise the numerical value of the aluminum component in the barrier layer, so that the two-dimensional electron gas concentration in the whole nitride HEMT structure is raised, and the purpose of raising the working current of the nitride HEMT structure can be achieved.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
It will be evident to those skilled in the art that the application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A method of fabricating a nitride HEMT structure, the method comprising:
Providing a substrate;
Growing a buffer layer based on the surface of the substrate;
Growing a channel layer based on a side of the buffer layer remote from the substrate;
growing a barrier layer on the side, far away from the substrate, of the channel layer and performing high-temperature desorption treatment to improve the aluminum component value in the barrier layer, wherein the depth of microcracks in the barrier layer is lower than one half of the thickness of the barrier layer;
A gate, a source, and a drain are fabricated based on a side of the barrier layer remote from the substrate.
2. A method of fabricating a nitride HEMT structure according to claim 1, wherein the step of growing a barrier layer based on a side of said channel layer remote from said substrate and performing a high temperature desorption process comprises:
growing a barrier layer on the side of the channel layer away from the substrate;
and annealing the barrier layer.
3. A method of fabricating a nitride HEMT structure according to claim 1 wherein said barrier layer comprises a plurality of sub-layers, and wherein said step of growing a barrier layer based on a side of said channel layer remote from said substrate and performing a high temperature desorption process comprises:
And after each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to different desorption conditions so as to gradually increase the numerical value of the aluminum components of the sub-layers along the direction away from the substrate.
4. A method of fabricating a nitride HEMT structure according to claim 3, wherein the step of subjecting each sub-layer to high temperature desorption under different desorption conditions after said sub-layer has been grown comprises:
After each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to the same desorption temperature, desorption pressure, desorption flow and different annealing time; wherein the annealing time of each sub-layer gradually increases in a direction away from the substrate.
5. A method of fabricating a nitride HEMT structure according to claim 3, wherein the step of subjecting each sub-layer to high temperature desorption under different desorption conditions after said sub-layer has been grown comprises:
After each sub-layer grows, carrying out high-temperature desorption on the sub-layers according to the same desorption pressure, desorption flow, annealing time and different desorption temperatures; wherein the desorption temperature of each sub-layer gradually increases in a direction away from the substrate.
6. A method of fabricating a nitride HEMT structure according to claim 1 wherein said barrier layer comprises a plurality of sub-layers, and wherein said step of growing a barrier layer based on a side of said channel layer remote from said substrate and performing a high temperature desorption process comprises:
sequentially growing each sub-layer, and after each sub-layer grows, carrying out high-temperature desorption on the sub-layer according to the same desorption conditions; wherein the aluminum component content of the grown sub-layer gradually increases along the direction away from the substrate.
7. A method of fabricating a nitride HEMT structure according to any one of claims 3-6 wherein the aluminum composition values of the plurality of sub-layers increase non-linearly in a direction away from the substrate.
8. The method of fabricating a nitride HEMT structure of claim 1, wherein prior to the step of growing a channel layer based on a side of the buffer layer remote from the substrate, the method further comprises:
growing a semi-insulating layer based on a side of the buffer layer remote from the substrate;
the step of growing a channel layer on the side of the buffer layer remote from the substrate comprises:
A channel layer is grown based on a side of the semi-insulating layer remote from the substrate.
9. A method of fabricating a nitride HEMT structure according to claim 1, wherein the step of fabricating a gate, a source, and a drain based on a side of the barrier layer remote from the substrate comprises:
Manufacturing a source electrode and a drain electrode on the basis of one side, far away from the substrate, of the barrier layer, wherein the source electrode and the drain electrode form ohmic contact with the barrier layer;
And manufacturing a grid electrode on the basis of one side, far away from the substrate, of the barrier layer, wherein the grid electrode and the barrier layer form Schottky contact, and the grid electrode is positioned between the source electrode and the drain electrode.
10. A nitride HEMT structure fabricated by the method of any one of claims 1-9, said nitride HEMT structure comprising:
A substrate;
a buffer layer located on a surface of the substrate;
a channel layer located on a side of the buffer layer remote from the substrate;
A barrier layer located on a side of the channel layer remote from the substrate;
A gate, a source, and a drain on a side of the barrier layer remote from the substrate.
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