CN118127476A - Sputtering system and device - Google Patents

Abstract

The invention relates to the field of physical vapor deposition, in particular to a sputtering system and a device, wherein the system comprises a multi-target sputtering chamber or a single-target sputtering chamber, a conveying chamber and a sample injection chamber; the transfer cavity can interconnect the wafer pretreatment cavity to realize the plasma etching cleaning of the wafer, and the thermal annealing treatment process of the wafer; the conveying cavity can be connected with the single-target sputtering cavity to realize separation and preparation of pollution materials, and the conveying cavity can be connected with the wafer pretreatment cavity to realize plasma etching and cleaning of the wafer, and the thermal annealing treatment process of the wafer. Furthermore, the conveying cavity can be connected with the single-target sputtering cavity, so that separation and preparation of some pollution materials are realized, and pollution to materials in the multi-target sputtering cavity is avoided.

Description

Sputtering system and device

Technical Field

The invention relates to the field of physical vapor deposition, in particular to a sputtering system and a sputtering device.

Background

Films described in the integrated circuit arts are typically two-dimensional systems attached to the surface of other objects, typically on the order of nanometers in thickness. The preparation of a film is the first step of the integrated circuit processing technology, and vacuum coating refers to a technology that a vacuum pump is used for enabling a closed cavity to reach a vacuum state, and then a film material is gasified and deposited on a solid substrate to form the film. This process can be broadly divided into: target vaporization, vacuum movement and film growth. Physical vapor deposition apparatuses are techniques for depositing a desired material on a wafer surface by a physical method, and generally include magnetron sputtering apparatuses, molecular beam epitaxy apparatuses, electron beam evaporation apparatuses, and pulsed laser deposition apparatuses.

The invention discloses a production type multi-target magnetron sputtering system for a thin film hybrid integrated circuit, which comprises a frame, a vacuum cavity and a vacuum acquisition system, wherein the vacuum cavity comprises a pre-vacuum chamber and a process chamber, the pre-vacuum chamber is positioned above the process chamber and is communicated with the process chamber, a sputtering target assembly, a heating assembly, a scanning trolley, a radio frequency cleaning table and a substrate frame capable of ascending from the process chamber to the pre-vacuum chamber are respectively arranged in the process chamber, a bottom plate capable of isolating the pre-vacuum chamber and the process chamber is arranged on the substrate frame, the scanning trolley is used for receiving a substrate disc on the substrate frame and driving the substrate disc to move among the sputtering target assembly, the heating assembly and the radio frequency cleaning table, and the vacuum acquisition system is used for vacuumizing the pre-vacuum chamber and the process chamber. The invention has the advantages of low cost, automatic loading of the substrate and continuous on-line sputtering film forming.

CN203065570U an in-line multi-target magnetron sputtering coating device, which relates to the technical field of sputtering coating. Rectangular sputtering targets with aspect ratio larger than 3 are adopted, more than 3 rectangular sputtering targets are arranged in parallel and coaxially in a row in a box-type vacuum chamber, the width directions of all targets are parallel to the long side of the vacuum chamber, and the target spacing is smaller than 2 times of the width of the rectangular targets. A linear motion structure is arranged above the rectangular sputtering target, the substrate frame and the substrate heater are fixed on the linear motion mechanism, and are driven by the stepping motor to do linear reciprocating motion along the long side of the vacuum chamber, and the starting point, the ending point and the motion speed of the linear reciprocating motion are programmed by a controller, so that the preparation of the single-layer, multi-layer and periodically repeated structure film is realized. The multi-target magnetron sputtering table has the characteristics of smaller vacuum chamber size and target size, larger uniform area of the prepared film, high air extraction speed, high film coating efficiency and the like.

CN202010533267.2 discloses a magnetron sputtering apparatus, which comprises a process chamber, a target disposed in the process chamber, and a carrier disposed opposite to the target. By improving the injection path of the process gas, the poisoning rate of the target is reduced and the productivity is improved.

CN202110985070.7 discloses a PVD coating apparatus comprising: the device comprises a cavity, a sputtering unit, a base, a bearing device, a deformation sensor and an edge thimble device; the sputtering unit is positioned at the upper part of the cavity; the bearing device comprises a bearing piece and a lifting mechanism, wherein the bearing piece is positioned at the periphery of the base, and the lifting mechanism is connected with the bearing piece; the deformation sensor is positioned on the inner wall of the cavity, and one end of the deformation sensor is electrically connected with the control unit; the two edge thimble devices are respectively and electrically connected with the control unit, and jack up the coated wafer according to the wafer deformation signals received by the control unit. The equipment in the invention ensures that the wafer contacts the edge convex ring only at the edge, reduces scratches and wafer fragments on the front surface of the wafer, improves the yield and effectively prevents the product on the front surface of the wafer from being plated; and different wafer warpage deformation after film plating is considered, so that the probability of wafer sliding and fragments is greatly reduced.

From the above, two sputtering methods are mainly available, one is that only one cathode is in one cavity, which avoids mutual pollution between cathodes.

The other mode is a linear film plating mode, although a plurality of cathodes are integrated in a rectangular cavity, the successive sputtering of the cathodes is realized, and only one cathode can work at the same time.

Both schemes cannot realize the sputtering of the multilayer responsible component film and the co-sputtering preparation of the alloy film.

First, with respect to the first solution described above, it is necessary to interconnect multiple sputtering chambers using a transfer chamber if multiple materials are to be deposited on the wafer surface, but the transfer chamber has a limited number of sputtering chambers that can be connected, and therefore this design does not allow for deposition of multiple materials. In addition, since one sputtering chamber can sputter only one material, alloy plating of a plurality of materials cannot be achieved.

While the second approach may enable sequential deposition of multiple materials, co-sputtering of multiple materials at the same time cannot be achieved.

Disclosure of Invention

Thin film preparation systems are mainly systems for depositing thin films on the surface of a semiconductor wafer, and generally comprise a rapid sample injection chamber, a transfer chamber, a sputtering chamber and the like. Currently, the sputtering chambers of wafer level thin film fabrication systems are essentially single target sputtering, i.e., one sputtering chamber can only effect sputter deposition of one material. Multiple sputtering chambers are interconnected using a transfer chamber if multiple materials are to be deposited on the wafer surface, but the transfer chamber has a limited number of sputtering chambers that can be connected to, and thus conventional designs cannot achieve deposition of multiple materials. In addition, since one sputtering chamber can sputter only one material, alloy plating of a plurality of materials cannot be achieved. However, the fields of magnetic storage, quantum information and the like all require multiple materials to prepare a multi-layer film on a wafer, so that the use of equipment is limited by the traditional design.

The invention provides a sputtering device which comprises a power supply system, an ultrahigh vacuum magnetron sputtering cathode, a rectangular ultrahigh vacuum cavity, a molecular pump set, a support bracket, a sample transmission inlet, a low-temperature pump set, a vacuum valve and a multidimensional movement sample table, wherein the vacuum valve is arranged on the vacuum valve;

the left side surface of the ultrahigh vacuum cavity is used for conveying the cavity to realize the wafer conveying;

the lower side surface of the rectangular ultrahigh vacuum cavity is provided with a mounting interface for mounting the molecular pump, the left side surface of the rectangular ultrahigh vacuum cavity is provided with a mounting interface for mounting the cryogenic pump, and the upper side surface of the cryogenic pump cavity is provided with a plurality of cathode mounting interfaces along the extension axis direction;

the molecular pump set is a vacuum obtaining device, and adopts a three-stage pump set design, including a mechanical pump, a molecular pump and a low-temperature pump;

the support frame is fixedly arranged at the lower end of the ultrahigh vacuum cavity;

The ultrahigh vacuum gate valve is arranged between the ultrahigh vacuum cavity and the molecular pump group and is used for realizing isolation between the vacuum cavities or between the vacuum cavity and the vacuum pump group;

The multi-dimensional motion sample stage is arranged in the ultrahigh vacuum cavity.

In particular, the power supply system is a direct current power supply.

In particular, the power supply system is a radio frequency power supply, and the radio frequency power supply frequency should be 13.56MHZ.

Particularly, a plurality of vacuum observation windows are arranged on the right side surface of the ultrahigh vacuum cavity, so that the observation of the internal working state is realized.

In particular, the ultra-high vacuum magnetron sputtering cathodes are distributed on two sides of the cavity in the ultra-high vacuum cavity in a ridge shape.

In particular, three rows of ultra-high vacuum magnetron sputtering cathodes are distributed in the ultra-high vacuum cavity, the ultra-high vacuum magnetron sputtering cathodes on two sides face the position of a sputtered wafer at a certain angle, and the ultra-high vacuum magnetron sputtering cathodes in the middle row face the position of the wafer vertically.

In particular, the front ends of the two groups of ultra-high vacuum magnetron sputtering cathodes are provided with another ultra-high vacuum magnetron sputtering cathode which faces the wafer vertically, and the dimension of the ultra-high vacuum magnetron sputtering cathode is larger than that of the other ultra-high vacuum magnetron sputtering cathodes.

In particular, the multidimensional movement sample table device is arranged in the ultrahigh vacuum cavity in the vacuum cavity, and the device comprises a screw rod and a device fixing mechanism;

the displacement screw rod drives the screw rod to move through the motor, so that the wafer whole mechanism can move along the direction of the screw rod, and the displacement screw rod can be used for realizing the selection of different cathode sputtering;

The wafer rotates the inclined lead screw, and the inclination rotation of the wafer can be controlled by controlling a motor connected with the inclined lead screw, so that sputtering at different angles is realized;

the support screw rod is used for supporting the wafer to keep stability in the process of transporting the wafer;

One end of the displacement screw rod moving gear is connected with the displacement screw rod, and the other end of the displacement screw rod moving gear is connected with the coupling and the vacuum external motor to realize the displacement of the sample table;

The wafer rotating and tilting gear is provided with a wafer rotating and tilting screw rod at one end, and one end of the gear is connected with a coupler and a vacuum external motor to realize tilting and rotation of the sample table;

the device fixing mechanism comprises a wafer fixing mechanism and a supporting mechanism;

The wafer fixing mechanism is used for grabbing and fixing the wafer, and the mechanism can be used for installing a radiation heating disc behind the wafer to heat the wafer;

and the supporting mechanism is connected with the vacuum motor and the lifting device, so that the lifting of the whole device is realized, and the deposition distance is changed.

Particularly, the wafer fixing mechanism comprises a wafer fixing plate, the wafer fixing plate is fixedly arranged on a sample table, wafer clamping grooves are formed in the left side and the right side of the wafer fixing plate, wafer clamping plates are symmetrically arranged on the front side and the rear side of the wafer fixing plate, sliding blocks are fixedly connected to the lower ends of the left side and the right side of the wafer fixing plate, the sliding blocks are in sliding connection with the wafer clamping grooves, a synchronous mechanism is arranged between two wafer fixing plates and a moving block which is fixedly connected to the left side or the right side, the synchronous mechanism comprises synchronous racks, synchronous gears and synchronous spring rods, the two synchronous racks are respectively and fixedly connected with the sliding blocks on the front side and the rear side, the synchronous gears are meshed between the two synchronous racks at the same time, and the synchronous gears are rotatably arranged at the lower end of the wafer fixing plate, and the synchronous spring rods are fixedly connected between the tail end of one synchronous rack and the lower end face of the wafer fixing plate.

Particularly, the ultra-high vacuum magnetron sputtering cathode comprises a sputtering head, a spraying pipe and a shielding cover, wherein the sputtering head is hoisted at the upper end inside the ultra-high vacuum cavity, the spraying pipe is fixedly arranged at the middle position of the lower end of the sputtering head, the shielding cover is covered at the outer side of the spraying pipe and fixedly arranged at the lower end of the sputtering head, the shielding cover is made of flexible materials, an expansion mechanism for expanding the shielding cover is further arranged in the sputtering head, the lower end of the sputtering head is provided with expansion sliding grooves along the radial direction of the expansion sliding grooves, a plurality of expansion sliding grooves are uniformly distributed in the circumferential direction, each expansion mechanism comprises a synchronous expansion disc, synchronous expansion grooves which are obliquely arranged are correspondingly arranged on the corresponding expansion sliding grooves, expansion rods are connected with the corresponding expansion sliding grooves in a sliding manner, one side of each expansion rod, which is exposed out of the synchronous expansion disc, is propped against the inner wall of the shielding cover, the inner side of the synchronous expansion disc is processed into a gear, the inner side of the synchronous expansion disc is meshed with a driving gear, the sputtering head is provided with a driving motor, and the output shaft of the driving motor is fixedly connected with the driving gear.

The invention also provides a system applied to the sputtering device of the technical scheme, which consists of a multi-target sputtering chamber or a single-target sputtering chamber, a conveying chamber and a sample injection chamber;

The conveying cavity consists of a polygonal cavity, a vacuum system and a multi-angle manipulator, wherein the polygonal cavity is preferably a hexagonal cavity and an octagonal cavity, the cavity is formed by welding stainless steel pipes, the top of the cavity is provided with a plurality of observation flanges, the bottom of the cavity is provided with the manipulator and the vacuum acquisition system installation position, and the manipulator is a multi-dimensional manipulator;

the sample injection chamber consists of an ultrahigh vacuum cavity, a vacuum system, a wafer box and a wafer box lifting mechanism;

the multi-target sputtering chamber or the single-target sputtering chamber is communicated with the conveying cavity, the sample injection chamber is communicated with the conveying cavity, and the multi-target sputtering chamber or the single-target sputtering chamber further comprises a pretreatment chamber, wherein the pretreatment chamber is arranged at two sides of the conveying cavity.

Single-target sputtering chambers, such as multi-target sputtering chambers, reduce the number of chamber mounted cathodes, with only one cathode mounted on the opposite side of the sample stage for deposition of contaminating materials. Preventing the material from polluting other cathodes.

The beneficial effects are that: (1) The sputtering device mainly comprises a rapid sample injection chamber, a conveying chamber and a multi-target sputtering chamber, wherein the multi-target sputtering chamber is a rectangular cavity, a plurality of sets of cathodes are distributed on the long side of the multi-target sputtering chamber, and the multi-target sputtering chamber is matched with a built-in multi-dimensional motion sample stage to realize layered accurate preparation of various films and also realize preparation of alloy films. The preparation efficiency of the multilayer film can be greatly improved through the design, and the design complexity and cost of the system are reduced.

(2) The transfer cavity can be connected with the wafer pretreatment cavity to realize plasma etching cleaning of the wafer, and the thermal annealing treatment process of the wafer. Furthermore, the conveying cavity can be connected with the single-target sputtering cavity, so that separation and preparation of some pollution materials are realized, and pollution to materials in the multi-target sputtering cavity is avoided.

Drawings

The invention will be further described with reference to the drawings and examples.

FIG. 1 is a schematic diagram of a multi-target sputtering chamber;

FIG. 2 is a flow chart of film preparation;

FIG. 3 is a schematic view of a structure within a sputtering chamber;

FIG. 4 is a schematic view of another configuration of a sputtering chamber;

FIG. 5 is a schematic view of a lead screw mounting structure;

FIG. 6 is a schematic diagram of sample introduction chamber, transfer chamber and multi-target or single-target sputter chamber connections;

FIG. 7 is a schematic illustration of a multi-target sputtering chamber or single-target sputtering chamber and pretreatment chamber connection;

FIG. 8 is a schematic view of a wafer fixing mechanism according to the present invention;

FIG. 9 is a schematic diagram of the structure of the ultra-high vacuum magnetron sputtering cathode in the present invention;

fig. 10 is an enlarged schematic view of the structure of fig. 9 a according to the present invention.

In the figure: 101. a power supply system; 102. an ultra-high vacuum magnetron sputtering cathode; 1021. a sputtering head; 1022. a jet pipe; 1023. a shielding cover; 1024. an expansion mechanism; 1025. expanding the sliding groove; 1026. a synchronous expansion disk; 1027. a synchronous expansion slot; 1028. an expansion rod; 1029. a drive gear; 103. rectangular ultrahigh vacuum cavity; 104. a molecular pump group; 105. a support bracket; 106. a sample transfer inlet; 107. a low temperature pump set; 108. a vacuum valve; 109. a multi-dimensional motion sample stage; 201. a screw rod; 202. a displacement screw rod; 203. rotating the inclined lead screw by the wafer; 204. supporting a screw rod; 205. a displacement screw rod motion gear; 206. rotating the bevel gear by the wafer; 207. a wafer fixing mechanism; 2071. a wafer fixing plate; 2072. a wafer clamping groove; 2073. a wafer clamping plate; 2074. a sliding block; 2075. a synchronizing mechanism; 2076. a synchronous rack; 2077. a synchronizing gear; 2078. a synchronizing spring rod; 208. a support mechanism; 301. a sample introduction chamber; 302. a transfer chamber; 303. a multi-target sputtering chamber or a single-target sputtering chamber; 304. a pretreatment chamber.

Detailed Description

The invention is further described in connection with the following detailed description in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.

The invention provides a sputtering device. FIG. 1 is a block diagram of a multi-target sputtering apparatus that can achieve layered or co-deposition of multiple materials for use in the semiconductor industry and research applications. The device comprises a power supply system 101, an ultrahigh vacuum magnetron sputtering cathode 102, a rectangular ultrahigh vacuum cavity 103, a molecular pump set 104, a support bracket 105 and a sample transmission inlet 106. A cryopump volume 107, a vacuum valve 108, and a multi-dimensional motion sample stage 109. In addition, the apparatus contains the necessary vacuum lines, vacuum fittings, cooling fittings, etc.

Wherein the power supply system 101 may select but is not limited to: a direct current power supply, a radio frequency power supply, a pulse direct current power supply, a high-energy pulse power supply and the like. Among them, a direct current power supply is preferable for sputtering a metal material, and a radio frequency power supply is preferable for sputtering an insulating material such as an oxide. The power of the power supply is selected according to actual requirements, and the frequency of the radio frequency power supply is 13.56MHz.

The ultra-high vacuum magnetron sputtering cathode 102 comprises a power supply feed-in device, a vacuum sealing device, a magnet assembly, a water cooling assembly, a gas circuit assembly and the like.

The rectangular ultrahigh vacuum cavity 103 is used for connecting the cavities such as the conveying cavity 302 and the like to realize the wafer conveying. The right side face is provided with a plurality of ultrahigh vacuum observation windows for realizing the observation of the internal working state. The lower side is provided with a vacuum pump set installation interface to realize the installation of vacuum obtaining equipment such as a molecular pump and the like. The left side face is provided with a vacuum pump set installation interface for installing adsorption pumps such as a cryopump. A plurality of cathode mounting interfaces are arranged on the upper side surface of the cavity body in the extending axial direction (of the low-temperature pump group 107). The size and the number of the installed cathodes can be flexibly selected according to the requirements.

The molecular pump unit 104 can be provided with mechanical pumps, molecular pumps, cryopumps, etc. according to the requirements, wherein a three-stage pump unit design, i.e. mechanical pumps, molecular pumps, cryopumps, etc. is preferably adopted.

The support bracket 105 and the vacuum valve 108 are used for realizing isolation between the vacuum cavities or between the vacuum cavities and the vacuum pump group. The multi-dimensional motion sample stage 109 can realize the sputtering of multiple layers of materials and the common preparation of multiple materials. The flow chart for film preparation is shown in figure 2 below. The multi-dimensional movement sample stage can be controlled to move to the corresponding center position according to the installation position of the ultra-high vacuum magnetron sputtering cathode 102 and the sputtering requirement of the film so as to realize the sputtering of the film.

In an embodiment shown in fig. 3, two rows of ultra-high vacuum magnetron sputtering cathodes 102 are distributed on two sides of the cavity in a ridge shape, when a certain specific material is sputtered, only the multi-dimensional movement sample stage is controlled to transfer a wafer to the lower part of the corresponding ultra-high vacuum magnetron sputtering cathode 102, the sample stage is regulated to be opposite to the ultra-high vacuum magnetron sputtering cathode 102, and the rotation of the sample stage is opened to start uniform deposition of a certain layer of material, as shown in the mechanical diagram of fig. 3 below. When the alloy coating is realized by sputtering various materials, the uniform deposition of the alloy film can be started only by controlling the sample stage to move to the center point of the relative positions of the ultra-high vacuum magnetron sputtering cathodes 102 and opening the rotation of the sample stage, as shown in the mechanical diagram of the following figure 4.

Figure 3 shows a cross-sectional view of two sputter chamber designs. As can be seen from fig. 3, this embodiment mounts three rows of ultra-high vacuum magnetron sputtering cathodes 102, with the two sides of the ultra-high vacuum magnetron sputtering cathodes 102 oriented at an angle to the position of the sputtered wafer. The middle row of ultra-high vacuum magnetron sputtering cathodes 102 is oriented vertically to the sputtered wafer position. Thus, in this embodiment, if it is desired to sputter a single UHV magnetron sputtering cathode 102, it is desired to control the multi-dimensional motion stage so that the wafer is oriented toward the UHV magnetron sputtering cathode 102. The sputtering of a plurality of adjacent ultra-high vacuum magnetron sputtering cathodes 102 needs to be realized, and then the multi-dimensional motion sample stage needs to be controlled so that the spatial position of the multi-dimensional motion sample stage is positioned on the center point of the plurality of ultra-high vacuum magnetron sputtering cathodes 102.

Fig. 4 discloses another embodiment in which two rows of ultra-high vacuum magnetron sputtering cathodes 102 are arranged, but the first ultra-high vacuum magnetron sputtering cathode 102 is larger in size than the other ultra-high vacuum magnetron sputtering cathodes 102, and more uniform film deposition can be achieved. The control logic when sputtering is required is identical to that described above.

The values illustrate that the number and arrangement of the ultra-high vacuum magnetron sputtering cathodes 102 are changed, and the size of the ultra-high vacuum magnetron sputtering cathodes 102 is changed.

Further, the structure diagram of the multidimensional movement sample table is shown in the following diagram, and the device is arranged in a vacuum cavity to realize the functions of grabbing a semiconductor wafer, moving along a long axis, rotating and tilting the wafer, lifting the wafer, heating the wafer and the like. The uniform and accurate preparation of the film can be realized by matching with the installation position of the ultra-high vacuum magnetron sputtering cathode 102.

The device comprises a 201 screw rod and a device fixing mechanism, wherein an oilless ceramic bearing is arranged in the device for bearing and fixing the screw rod, and the device is also connected with a lifting mechanism fixed in the vacuum cavity and can be matched with the lifting mechanism to realize the lifting of the whole mechanism so as to change the deposition distance.

The displacement screw rod 202 drives the screw rod to move through a motor, so that the whole mechanism of the low-temperature pump set 107 can move along the direction of the screw rod, and the displacement screw rod can be used for realizing the selection of different ultra-high vacuum magnetron sputtering cathodes 102.

The wafer rotating and tilting screw 203 can control the wafer to tilt and rotate by controlling a motor connected with the wafer rotating and tilting screw 203, so that sputtering at different angles is realized.

The device comprises a support screw rod 204 and a displacement screw rod motion gear 205, wherein one end of the gear is connected with the screw rod, and the other end of the gear is connected with a coupler and is connected with a vacuum external motor, so that displacement of the sample table is realized.

The wafer rotates the tilting gear 206, and one end of the gear is connected with the screw rod, and the other end is connected with the coupling and connected with the vacuum external motor, so that the tilting rotation of the sample table is realized.

The wafer fixing mechanism 207 is used for grabbing and fixing the wafer, and the mechanism can be used for installing a radiation heating plate behind the wafer to heat the wafer.

And the supporting mechanism 208 is connected with the vacuum motor and the lifting device, realizes the lifting of the whole device and changes the deposition distance.

Further, as shown in fig. 8, the wafer fixing mechanism 207 includes a wafer fixing plate 2071, the left and right sides of the wafer fixing plate 2071 are provided with wafer clamping grooves 2072, the front and rear sides of the wafer fixing plate 2071 are symmetrically provided with wafer clamping plates 2073, the lower ends of the left and right sides of the wafer fixing plate 2071 are fixedly connected with sliding blocks 2074, the sliding blocks 2074 are slidably connected with the wafer clamping grooves 2072, a synchronizing mechanism 2075 is arranged between the two wafer fixing plates 2071 and the sliding blocks 2074 fixedly connected on the left side or the right side, the synchronizing mechanism 2075 includes two synchronizing racks 2076, synchronizing gears 2077 and a synchronizing spring rod 2078, the synchronizing racks 2076 are fixedly connected with the sliding blocks 2074 on the front and rear sides respectively, the synchronizing gears 2077 are simultaneously meshed between the two synchronizing racks 2076, and the synchronizing gears 2077 are rotationally connected with the lower ends of the wafer fixing plate 2071, and the synchronizing spring rod 2078 is fixedly connected between the end of one synchronizing rack 2076 and the lower end surface of the wafer fixing plate 1.

In the process of clamping the wafer, since the sizes of the wafers are not the same, in order to clamp the wafers with different sizes, the wafer clamping plates 2073 move along the front and rear directions in the clamping process, the wafer is placed at the position between the two wafer clamping plates 2073, in the process, the synchronous gear 2077 and the synchronous rack 2076 are meshed with each other to enable the two wafer clamping plates 2073 to synchronously move, so that the wafer can be always positioned at the central position, in the process, the synchronous spring rod 2078 is extruded, the wafer is clamped under the extrusion action of the synchronous spring rod 2078, meanwhile, the wafer fixing plates 2071 and the sliding blocks 2074 are in threaded connection, firstly, the replacement of the wafer clamping plates 2073 is facilitated, and meanwhile, when different wafers are clamped, the different wafer clamping plates 2073 are convenient to use.

Further, as shown in fig. 9 and 10, the ultra-high vacuum magnetron sputtering cathode 102 includes a sputtering head 1021, a spray tube 1022 and a shielding cover 1023, the sputtering head 1021 is suspended at an upper end inside the rectangular ultra-high vacuum cavity 103, the spray tube 1022 is fixedly installed at a middle position of a lower end of the sputtering head 1021, the shielding cover 1023 covers an outer side of the spray tube 1022 and is fixedly installed at a lower end of the sputtering head 1021, the shielding cover 1023 is made of flexible materials, an expansion mechanism 1024 of the expansion shielding cover 1023 is further installed in the sputtering head 1021, a plurality of expansion sliding grooves 1025 are uniformly arranged in a circumferential direction of the expansion sliding grooves 1025, the expansion mechanism 1024 includes a synchronous expansion disc 1026, a synchronous expansion groove 1027 which is obliquely installed is formed on the corresponding expansion sliding groove 1025, an expansion rod 1028 is slidingly connected with the corresponding expansion sliding groove 1025 in the synchronous expansion groove 1027 in a common mode, one side of the expansion rod 1028 exposes against an inner wall of the shielding cover 1023 of the synchronous expansion disc 102, the expansion sliding groove 1025 is formed in a radial direction, the expansion sliding groove 1025 is uniformly arranged along a radial direction, the expansion sliding groove 1025 is formed along a radial direction of the expansion sliding groove 1023, the expansion sliding groove 1025 is uniformly, the expansion sliding groove 102is uniformly arranged along the expansion sliding groove 1028 is formed along the radial direction, the expansion sliding groove 102is formed along the expansion sliding groove 102, the expansion groove 102is formed along the expansion groove 102, the expansion groove 102is, the expansion groove is formed, and the expansion cover is formed, and the expansion driving mechanism is driven by the expansion driving gear 102is and the expansion driving mechanism and the expansion cover is driven.

When different wafers are sputtered, the sputtering range should be controlled, in the secondary process, the driving motor drives the driving gear 1029 to rotate, the driving gear 1029 drives the synchronous expansion disc 1026 to rotate, the synchronous expansion groove 1027 in the synchronous expansion disc 1026 is slidably connected with the expansion rod 1028, and under the synchronous action of the synchronous expansion groove 1027 and the expansion sliding groove 1025, the expansion rod 1028 drives the shielding cover 1023 to synchronously expand or contract inwards, so that the sputtering range is controlled.

Further, as shown in fig. 5 and 6, the present invention discloses a thin film preparation system consisting of a multi-target sputtering chamber or single-target sputtering chamber 303, a transfer chamber 302, and a sample introduction chamber 301.

The transfer chamber 302 is composed of a polygonal chamber body, a vacuum system (vacuum acquisition system and vacuum measurement system), and a multi-angle robot. Wherein the polygonal cavity is preferably a hexagonal cavity and an octagonal cavity, the cavities are formed by welding stainless steel pipes, preferably 316L stainless steel, a plurality of observation flanges are arranged at the top of the cavities, and a manipulator and a vacuum acquisition system installation position are arranged at the bottom of the cavities. The manipulator is a multidimensional manipulator, and a current mature scheme can be adopted.

The sample chamber 301 is composed of an ultra-high vacuum chamber, a vacuum system (vacuum acquisition system and vacuum measurement system), a wafer cassette, and a wafer cassette lifting mechanism.

The ultra-high vacuum chamber 103 is welded from stainless steel tubing, preferably 316L stainless steel. An observation window and a vacuum system mounting flange are arranged. The wafer cassette employs a standard 25-piece storage bin that can store 25 wafers of 4 to 12 inches. The wafer box lifting mechanism is composed of a vacuum bellows and a motor, and can be matched with a mechanical arm to grasp and store wafers at different positions.

Further, the present invention discloses a thin film preparation system embodiment, which adds a pretreatment chamber 304, a single target sputtering chamber 303, to the system disclosed above.

The single target sputtering chamber 303 reduces the number of chamber mounted cathodes compared to, for example, a multi-target sputtering chamber, with only one cathode mounted on the opposite side of the sample stage for deposition of contaminating materials. Preventing the material from polluting other cathodes.

The pretreatment chamber can realize the functions of oxidation annealing and plasma cleaning.

The whole system can realize the functions of wafer transmission, pretreatment, heating annealing and film deposition by matching, and can be applied to the fields of quantum information, magnetic storage, semiconductors and the like.

The values illustrate that changing the number of interconnected chambers in the sample transfer chamber, the number of multi-target sputtering chambers, etc. still fall within the scope of this patent.

The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the foregoing examples, and that the foregoing description and description are merely illustrative of the principles of this invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (9)

1. A sputtering system characterized by: the system consists of a multi-target sputtering chamber or a single-target sputtering chamber (303), a conveying cavity (302) and a sample injection chamber (301);

The conveying cavity (302) consists of a polygonal cavity, a vacuum system and a multi-angle manipulator, wherein the bottom of the conveying cavity is provided with the manipulator and the vacuum obtaining system installation position, and the manipulator is a multi-dimensional manipulator; the conveying cavity (302) can interconnect the wafer pretreatment cavity to realize plasma etching cleaning of the wafer, and the thermal annealing treatment process of the wafer; the conveying cavity (302) can be connected with the single-target sputtering cavity to realize separation and preparation of pollution materials;

the sample injection chamber (301) consists of an ultrahigh vacuum cavity, a vacuum system, a wafer box and a wafer box lifting mechanism;

The multi-target sputtering chamber or single-target sputtering chamber (303) is communicated with the conveying cavity (302), the sample injection chamber (301) is communicated with the conveying cavity (302), and the multi-target sputtering chamber or single-target sputtering chamber further comprises a pretreatment chamber (304), and the pretreatment chamber (304) is arranged on two sides of the conveying cavity (302).

2. A sputtering system according to claim 1, wherein: the polygonal cavity is preferably a hexagonal cavity and an octagonal cavity, the cavity is formed by welding stainless steel pipes, and a plurality of observation flanges are arranged at the top of the cavity.

3. A sputtering apparatus applied to the sputtering system of claim 1, characterized in that: the sputtering device comprises a power supply system (101), an ultrahigh vacuum magnetron sputtering cathode (102), a rectangular ultrahigh vacuum cavity (103), a molecular pump group (104), a support bracket (105), a sample transmission inlet (106), a low-temperature pump group (107), a vacuum valve (108) and a multidimensional movement sample table (109), and is characterized in that:

the left side surface (106) of the ultrahigh vacuum cavity (103) is used for conveying the cavity to realize the wafer conveying;

The lower side surface of the rectangular ultrahigh vacuum cavity (103) is provided with a mounting interface for mounting the molecular pump, the left side surface is provided with a mounting interface for mounting the low-temperature pump (107), and the upper side surface of the cavity of the low-temperature pump (107) is provided with a plurality of cathode mounting interfaces along the extension axis direction;

the molecular pump group (104) is a vacuum obtaining device, and adopts a three-stage pump group design, comprising a mechanical pump, a molecular pump and a cryogenic pump;

The support frame (105) is fixedly arranged at the lower end and the upper end of the ultrahigh vacuum cavity (103), the power supply system (101) is fixedly arranged at the upper end of the support frame (105) positioned at the upper end, and the ultrahigh vacuum magnetron sputtering cathode (102) is arranged at the upper end of the ultrahigh vacuum cavity (103) and positioned in the support frame (105);

the ultrahigh vacuum gate valve (108) is arranged between the ultrahigh vacuum cavity (103) and the molecular pump group (104) and is used for realizing isolation between the vacuum cavities or between the vacuum cavities and the vacuum pump group;

The multi-dimensional motion sample stage (109) is arranged inside the ultra-high vacuum cavity (103).

4. A sputtering apparatus according to claim 3, wherein: the ultra-high vacuum magnetron sputtering cathodes (102) are distributed on two sides of the cavity in the ultra-high vacuum cavity (103) in a ridge shape.

5. A sputtering apparatus according to claim 3, wherein: three rows of ultra-high vacuum magnetron sputtering cathodes (102) are distributed in the ultra-high vacuum cavity (103), the ultra-high vacuum magnetron sputtering cathodes (102) on two sides face to the position of a sputtering wafer, and the ultra-high vacuum magnetron sputtering cathodes (102) in the middle vertically face to the position of the wafer.

6. A sputtering apparatus according to claim 5, wherein: the front ends of the two groups of ultra-high vacuum magnetron sputtering cathodes (102) are provided with another ultra-high vacuum magnetron sputtering cathode (102) which faces the wafer vertically, and the size of the ultra-high vacuum magnetron sputtering cathode (102) is larger than that of the other ultra-high vacuum magnetron sputtering cathodes (102).

7. A sputtering apparatus according to claim 6, wherein: the multidimensional movement sample table (109) is arranged in the ultrahigh vacuum cavity (103) in the vacuum cavity, and the device comprises a screw rod (201) and a device fixing mechanism;

The displacement screw rod (202) drives the screw rod to move through a motor so as to realize the movement of the whole mechanism of the wafer 107 along the direction of the screw rod, and the displacement screw rod is used for realizing the selection of sputtering of different ultra-high vacuum magnetron sputtering cathodes (102);

the wafer rotating and tilting screw rod (203) controls the wafer to rotate in a tilting way through controlling a motor connected with the wafer rotating and tilting screw rod, so that sputtering at different angles is realized;

a support screw (204) for supporting the wafer to maintain stability during transport;

A displacement screw rod motion gear (205), one end of which is connected with the screw rod, and the other end of which is connected with a coupler and connected with a vacuum external motor, so as to realize the displacement of the sample table;

A wafer rotating and tilting gear (206), wherein one end of the gear is connected with the screw rod, and the other end of the gear is connected with the coupling and the vacuum external motor to realize the tilting and rotation of the sample table;

the device fixing mechanism comprises a wafer fixing mechanism (207) and a supporting mechanism (208);

The wafer fixing mechanism (207) is used for grabbing and fixing the wafer, and the mechanism can be used for installing a radiation heating disc behind the wafer to heat the wafer;

And the supporting mechanism (208) is connected with the vacuum motor and the lifting device, so that the lifting of the whole device is realized, and the deposition distance is changed.

8. A sputtering apparatus according to claim 7, wherein: wafer fixed establishment (207) is including wafer fixed plate (2071), wafer fixed plate (2071) fixed mounting is on the sample platform, wafer clamping groove (2072) have been seted up in the left and right sides of wafer fixed plate (2071), and wafer clamping plate (2073) have been seted up to the front and back both sides symmetry of wafer fixed plate (2071), the lower extreme fixedly connected with slider (2074) of the left and right sides of wafer fixed plate (2071), slider (2074) with wafer clamping groove (2072) sliding connection, be provided with synchro mechanism (2075) between slider (2074) with in left side or with at right side fixed connection, synchro mechanism (2075) include rack (2076), synchro pinion (2077) and synchro spring rod (2078), and slider (2074) fixed connection of both sides around and respectively, rack (2076) have between two synchro pinion (2076) simultaneously and rack (207end (2077), rack (2077) are connected with one of them under the fixed end of the synchro spring rod (2071) is connected with the fixed end of wafer (2071).

9. A sputtering apparatus according to claim 8, wherein: the ultra-high vacuum magnetron sputtering cathode (102) comprises a sputtering head (1021), a jet pipe (1022) and a shielding cover (1023), wherein the sputtering head (1021) is lifted at the upper end inside the ultra-high vacuum cavity (103), the jet pipe (1022) is fixedly arranged at the middle position of the lower end of the sputtering head (1021), the shielding cover (1023) covers the outer side of the jet pipe (1022) and is fixedly arranged at the lower end of the sputtering head (1021), the shielding cover (1023) is made of flexible materials, an expansion mechanism (1024) for expanding the shielding cover (1023) is further arranged in the sputtering head (1021), an expansion sliding groove (1025) along the radial direction of the expansion mechanism is arranged at the lower end of the sputtering head (1021), a plurality of expansion sliding grooves (1025) are uniformly distributed in the circumferential direction, the expansion mechanism (1024) comprises a synchronous expansion disc (1026), a synchronous expansion groove (1027) which is obliquely arranged is correspondingly arranged on the synchronous expansion sliding groove (1025), the corresponding expansion sliding groove (1028) and the synchronous expansion sliding groove (1028) are correspondingly arranged on the synchronous expansion disc (1026), the synchronous expansion disc (1028) is synchronously meshed with the synchronous expansion disc (1028) which is correspondingly arranged on the inner side of the synchronous expansion disc (1028), the synchronous expansion disc (1028) which is in the synchronous expansion disc (1023) and is in a synchronous expansion mechanism (1023) which is in a synchronous manner, a driving motor is arranged in the sputtering head (1021), and an output shaft of the driving motor is fixedly connected with the driving gear (1029).