KR100795063B1 - Apparatus for deposition composition gradient multi - thin film and fabricating method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inclined multilayer thin film deposition apparatus for producing a multilayer thin film on which an interfacial gradient layer is formed by simultaneous deposition of heterogeneous targets, and to a method for manufacturing the multilayer thin film. A plurality of sputtering guns or evaporation crucibles are formed therein, and each of the sputtering guns or evaporation crucibles is equipped with or inserted into a heterogeneous target, and a substrate is formed at an equal position from the heterogeneous targets. By the simultaneous operation of a sputtering gun or an evaporation crucible, the heterogeneous target components are deposited on the substrate at the same time to form an interfacial slope layer on the substrate. It aims at providing the manufacturing method. As a result, a multilayer thin film having an interfacial gradient layer formed by simultaneous deposition of heterogeneous targets mounted or inserted into a plurality of sputtering guns or evaporation crucibles can be manufactured in a single process, thereby improving the interfacial properties of the multilayer thin film. And it is possible to deposit a high quality thin film, there is an advantage to maximize the time and economic efficiency for the deposition process.

Sparting Evaporation Multilayer Thin Film Single Process Interface Inclined Deposition Zone Separation

Description

Apparatus for deposition composition gradient multi-thin film and fabricating method

1-Schematic diagram of the main part of the inclined multilayer thin film deposition apparatus by the sputtering according to the present invention.

Figure 2-Schematic diagram of the main part for the sputtering apparatus for (a) forming a multi-layer thin film with Zr target and Y target according to the present invention and (b) cross-sectional view of a thin film deposited with the target component.

3 to 2 are graphs showing the atomic composition ratio of the thin film according to the depth of FIG.

4-Schematic diagram of the main part of the sputtering apparatus for (a) forming a multi-layer thin film with a Zr target, a Y target and a Ce target in accordance with the present invention and (b) a cross-sectional view of a thin film deposited with the target component.

5-Schematic diagram of the main part of the sputtering apparatus for (a) forming a multi-layer thin film with Zr target and Ce target according to the present invention and (b) cross-sectional view of a thin film deposited with the target component.

6-Schematic diagram of the principal part of a sputtering apparatus for (a) forming a multilayer thin film with a Zr target and a Ce target according to the present invention, and (b) a cross-sectional view of the thin film deposited with the target component.

Figure 7-Schematic diagram of the main part for the inclined multilayer thin film deposition apparatus by evaporation according to the present invention.

<Description of Major Symbols Used in Drawings>

100: spattering gun 110: body portion

120: target mounting portion 200: target

300: substrate 400: screen

500: deposition region separator 600: evaporation crucible

610: body portion 620: target insertion portion

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer thin film deposition apparatus, and to an inclined multilayer thin film deposition apparatus capable of manufacturing a multilayer thin film having an interfacial slope layer by simultaneous deposition of heterogeneous targets in a single process, and a method of manufacturing the multilayer thin film. .

The conventional multi-layer thin film deposition method using a sputtering device or an evaporation device is a thin film deposition process that is widely used worldwide as a kind of physical vapor deposition (PVD). If the density is high and the metal target is used, a high deposition rate can be obtained and the system manufacturing cost and maintenance cost are low.

However, in order to deposit a multilayer thin film, there is a problem in that the process of depositing each thin film must be repeatedly applied.

For example, in the process of depositing a multilayer buffer thin film (Y ₂ O ₃ / YSZ / CeO ₂ ) of a YBCO-based high temperature superconducting wire, each sputtering gun or an evaporation crucible may be a multilayer thin film (Y ₂ O ₃ , YSZ, CeO ₂ ). It is manufactured by the number of processes. In addition, it is difficult to control the overall characteristics due to the difference in physical properties occurring at the interface between the thin film layer in the multilayer thin film deposition.

Therefore, in the multilayer thin film deposition process for forming the buffer layer of the high temperature superconducting wire, the process efficiency for the deposition process is reduced by depositing thin films of different materials, and physical and chemical problems may occur at the interface due to the difference in physical properties between the thin film layers. Will be.

The present invention has been made to solve the above problems, by manufacturing a multi-layer thin film with an interfacial gradient layer formed by the simultaneous deposition of different targets in a single process, to improve the interfacial properties of the multi-layer thin film, and to increase the deposition efficiency inclined type An object of the present invention is to provide a multilayer thin film deposition apparatus and a method for producing the multilayer thin film.

In order to achieve the above object, the present invention provides a multi-layer thin film deposition apparatus, wherein a plurality of spattering guns or evaporation crucibles are formed in a vacuum chamber, and each spattering gun or evaporation crucible is a heterogeneous target. Is mounted or inserted, the substrate is formed at an even position from the heterogeneous target, by the simultaneous operation of the spattering gun or evaporation crucible, the heterogeneous target component is deposited on the substrate at the same time to the upper side of the substrate An object of the present invention is to provide an inclined multilayer thin film deposition sputtering or evaporation apparatus and a method of manufacturing the multilayer thin film, wherein an interfacial slope layer is formed.

In addition, the spattering gun or the evaporation crucible is composed of a body portion and a target mounting portion, the body portion is formed of a flexible material is formed to adjust the angle of the target mounting portion, the distance between the substrate and the target mounting portion It is preferable.

Here, the inclined multilayer thin film deposition apparatus is preferably formed adjacent to the front side of the substrate, the screen is further formed to be horizontal to the substrate surface.

In addition, the inclined multilayer thin film deposition apparatus is disposed on a path where the heterogeneous target components reach the substrate, and a deposition region separation plate is further formed so as to separate the deposition regions by controlling the deposition rate for the heterogeneous target components. It is preferable that a multilayer interfacial slope layer is formed.

In addition, the deposition region separation plate is formed in plural, preferably formed in a plate shape or a pipe shape is formed so as to control the position and angle.

In addition, the substrate is preferably supplied by reel-to-reel and transported.

Accordingly, it can be effectively used for a physical vapor deposition apparatus, such as a sputtering deposition apparatus or an evaporation deposition apparatus, and an interfacial gradient layer by simultaneous deposition of heterogeneous targets mounted or inserted into a plurality of spattering guns or evaporation crucibles. The formed multilayer thin film can be manufactured in a single process, thereby improving the interfacial properties of the multilayer thin film, depositing a high quality thin film, and maximizing time and economic efficiency for the deposition process.

 In addition, it is possible not only to deposit a multilayer thin film having a plurality of interfaces by a deposition process separation plate but also to freely control the number of layers of the multilayer thin film, thereby minimizing the difference in physical properties between the interfaces to achieve optimum physical properties. There is an advantage that can deposit a thin film having.

In addition, the distance and angle between the substrate and the spattering gun or the evaporation crucible can be adjusted to not only control the deposition rate, but also to deposit a high quality thin film, and also to the existing spattering or evaporation apparatus. It is expected to be economical and high in utilization because it can be simply changed and used.

Hereinafter, with reference to the accompanying drawings will be described in detail for the present invention.

The present invention uses a physical vapor deposition system, generally a physical vapor deposition apparatus is a sputtering device or an evaporation device. The DC reactive sputtering system shown in FIG. 1, which applies a DC power source between the target 200 and the substrate 300, and reacts atoms of the target 200 from the target 200 by the reaction gas or the like. Molecules are separated to generate a plasma to deposit a thin film of the same composition as the target 200 on the substrate 300, the evaporation system (evaporation system) shown in FIG. It is put and heated so that the vapor composed of the target component is deposited on the substrate.

A plurality of spattering guns 100 or an evaporation crucible 600 is formed to deposit a multilayer thin film in the vacuum chamber of the spattering device or the evaporation device, and each spattering gun 100 ) Or the evaporation crucible 600 is equipped with a heterogeneous target 200, such as A, B, ..., to be deposited in multiple layers, is inserted or inserted, the heterogeneous target 200 or the double The substrate 300 is formed at an even position from the perforation crucible 600. Here, depending on the type of target and the deposition area, a spherical gun and an evaporation crucible may be simultaneously installed in the same vacuum chamber.

The heterogeneous target 200 components are simultaneously deposited on the substrate 300 by simultaneous operation of the plurality of spattering guns 100 or by simultaneous heating of the evaporation crucible 600. In addition to the stabilized thin film layer which is originally deposited by the target 200, the interfacial slope layer is formed by the simultaneous deposition on the 300.

In addition, the spattering gun 100 or the evaporation crucible 600 may be located on the same plane (xy plane) as the substrate 300 according to the deposition purpose, and one target is on the same plane as the substrate (xy). Plane), and the other target may be located on a plane perpendicular to the substrate (xz plane or yz plane).

In addition, the spattering gun 100 is composed of a body portion 110, the target mounting portion 120, the evaporation crucible 600 is composed of a body portion 610 and the target insertion portion 620, The body portion 610 is formed of a flexible material and the angle of the target mounting portion 120 or the target insertion portion 620, and the distance between the substrate 300 and the target mounting portion 120 or the target insertion portion 620 Is preferably formed to be controlled.

The body parts 110 and 610 are formed of a flexible material, and are generally formed in a bellows shape or in a cobra tube shape to adjust the front, rear, left, and right angles, and to adjust the length of the spattering gun 100. It is possible.

As a result, the target mounting part 120 or the target insertion part 620 may be adjusted in angle, thereby controlling the components of the heterogeneous target 200 deposited on the substrate 300, and adjusting the length of the substrate ( Since the distance between 300 and the target mounting portion 120 or the target insertion portion 620 can be controlled to control the deposition rate and the deposition thickness, the experiment can be performed at an angle and a distance at which the deposition rate is maximized.

In addition, the screen 400 is formed on the path of the heterogeneous target 200 components to reach the substrate 300, is formed adjacent to the front side of the substrate 300, and is horizontal to the surface of the substrate 300 To form more.

The screen 400 is for confining the deposition region to the substrate 300 so as to prevent plasma generated by the heterogeneous target 200 components from reaching the substrate, which is generally a large area substrate. In the case where the temperature of the substrate is not uniform, or the portion is not uniformly deposited by the screen 400 so that the thin film is uniform deposition under the same conditions.

In addition, the heterogeneous target 200 component is positioned on a path that reaches the substrate 300 and is formed perpendicular to the surface of the substrate 300 so that the heterogeneous target 200 component to the substrate 300 may be formed. The deposition region separator 500 is further formed to separate the deposition regions. In addition, the deposition region separation plate 500 is formed so as to control the position and angle, it is preferable to be formed in plurality, whereby it can be located at an appropriate distance between the heterogeneous target 200 and from the substrate 300. If necessary, a plurality of the substrates 300 may be perpendicular to and perpendicular to the substrate 300.

In addition, the deposition region separation plate 500 may be formed in a plate shape or a pipe shape to control various deposition regions. This greatly limits the deposition area as needed, or, if the heterogeneous target is located on a different plane with respect to the substrate, by placing the pipe-shaped deposition area separation plate 500 in parallel with the outer circumferential surface on the front side of the target, thereby providing different target components. It is possible to define the deposition region without disturbing the path to the substrate. In addition, the deposition region separation plate may be formed in a cap shape that covers the front side of the sputtering gun or the evaporation crucible.

For example, in the case where the multilayer thin film by the A target 200 and the B target 200 is to be deposited, when the component of the A target 200 is to be deposited on any part of the substrate 300, the B target ( When the deposition region separation plate 500 is installed on the path where the component 200 reaches the substrate 300 and the component of the target B 200 is to be deposited, the component A target 200 is the substrate 300. When the deposition region separation plate 500 is installed on the path reaching (), and A and B targets 200 are to be deposited, the deposition region separation plate 500 may be A according to the deposition region. It is to be installed between the target 200 and the target B (200). Here, in order to more accurately separate the deposition region, the deposition region separation plate 500 may be formed in plural on the path reached by the A or B target 200.

Therefore, the deposition region separation plate 500 does not completely block the target 200 component in the plasma state, but serves to reduce the deposition rate of the A target 200 or the B target 200, and thus, for a predetermined time. According to the thickness of the substrate 300 on which the thin film is deposited, the portion having a large proportion of the A target 200 and the portion having a large ratio of the B target 200, or the portion where the A and B target 200 coexist similarly By the presence of the thin film, the interface of the thin film layer composed of the A target 200 and the B target 200 components is formed to be inclined, thereby completing the multi-layer interfacial slope layer. This forms a multilayer thin film including at least one of the heterogeneous targets 200 by a single process, and the interface between each thin film is formed obliquely according to the deposition area to minimize the difference in physical properties at the interface.

Here, the substrate 300 is preferably supplied in reel-to-reel, which is one of the supply methods of the substrate 300 for forming a conventional superconducting wire, which is provided to two reels. The substrate 300 is wound up, so that one of the substrates 300 is supplied to the substrate 300 and the substrate 300 on which the thin film deposition is completed is transferred to the other side.

In the substrate 300 formed long in the longitudinal direction, the screen 400 is disposed on the front side of the substrate 300 to deposit the thin film under the same conditions at the same distance from the target 200 at a uniform substrate 300 temperature. It can be formed so that the deposition of the thin film under the same conditions as possible. In addition, the components of the A target 200 are mainly deposited on the lowermost side by the deposition region separator 500, and when the components are transferred to one side, the components of the A target 200 and the B target 200 are deposited together, The multilayer thin film is formed, and each interface forms an interfacial slope layer that is continuously changed. The substrate 300 thus deposited is transferred to the other reel and wound up.

Hereinafter, with reference to the accompanying drawings will be described with reference to the various embodiments of the principle of forming a multilayer thin film by a sputtering deposition method (DC reactive sputtering deposition method) which is one of the physical multilayer thin film deposition apparatus according to the present invention.

First, as shown in FIG. 1, a sputtering apparatus formed of a wire rod (a tape, in which a Ni-W substrate 300 was used) having a long shape in the length of the substrate 300 in the vacuum chamber was constructed. It is mounted on a reel to reel system for transferring the substrate 300, two spattering gun 100 formed at an equal position with the substrate 300, and the target mounting portion 120 of the spattering gun 100 It is configured to include the target 200.

① As shown in FIG. 2, the Zr (zirconium) target 200 is mounted on the left sputtering gun 100, and the Y (yttrium) target 200 is mounted on the right sputtering gun 100, and a heater ) And a vacuum chamber are not shown.

Then, the vacuum chamber of the vacuum chamber was pumped with a vacuum turbo motor until it became 10 ^-5 Torr or less, and at the same time, the current was applied to the spattering gun 100 with the deposition rate of Y and Zr elements at 2.0 mA / sec. When the substrate 300 to be deposited is stabilized, the deposition is performed while moving in a reel-to-reel manner. In addition, the screen 400 was formed adjacent to the front side of the substrate 300 in order to deposit a thin film at a uniform deposition rate and the temperature of the substrate 300.

In addition, two deposition area separation plates 500 are installed on the path from which the components of the Zr target 200 reach the substrate 300 to the near side and the far side from the substrate 300, respectively. ) Was simultaneously operated, and the substrate 300 was moved from right to left.

As a result, the distribution of Y and Zr in each deposition region according to the thickness of the substrate 300 is as shown in FIG. 3 is a graph measuring the atomic count (AC) of each target 200 according to the depth of the thin film, which is precisely separated from the deposition region according to the thickness of the thin film by the deposition region separator 500. As a result, the multilayer thin film is formed and the interface is formed to be inclined.

That is, according to the movement direction of the substrate 300, the desired thin film can be formed into a multilayer (YZO / Y ₂ O ₃ / Ni-W) by a single process and the interface can be deposited to be inclined. there was.

② As shown in FIG. 4 (a), the left sputtering gun has a Ce (cerium) target 200, and the center spattering gun 100 has a Zr (zirconium) target 200, and a right sputtering gun 100. Y (yttrium) target 200 is mounted, the heater (heater) and the vacuum chamber is not shown.

The deposition method and conditions are the same as the above ①, and the deposition region separator 500 is positioned as shown in FIG. 4 (a), and the multilayer (CeO ₂ / YZO /) as shown in FIG. Y ₂ O ₃ / Ni-W) thin film is completed, and the interface between the multilayer thin films is formed in an inclined shape to complete the multilayer thin film having the interfacial slope layer formed thereon.

③ As shown in FIG. 5A, a Zr (zirconium) target 200 is mounted to the left sputtering gun 100, and a Ce (cerium) target 200 is mounted to the right sputtering gun 100.

The deposition method and conditions are the same as the above ①, and the deposition region separator 500 is positioned as shown in FIG. 5 (a), and the multilayer (CZO / CeO ₂ / Ni-W) thin film is completed, and the interface between the multilayer thin films is formed to be inclined, thereby completing the multilayer thin film having the interfacial slope layer formed thereon.

④ Zr (zirconium) target 200 is mounted on the left sputtering gun 100, and Ce (cerium) target 200 is mounted on the right sputtering gun 100, as shown in FIGS. 6 (a) and 6 (b). The deposition method and conditions are the same as the above ①.

In this case, the substrate and the Ce target are positioned on the xy plane and the substrate 300 and the Zr target 200 are located on the xz plane or the yz plane to separate the deposition regions, as shown in FIG. 6 (b). As such, the pipe-shaped deposition region separating plate 500 is installed in the direction parallel to the outer circumferential surface on the front side of the Zr target 200, so that a certain region of the substrate does not interfere with the path of the components of the Ce target. Allow Zr target components to be deposited on the substrate. As a result, the multilayer (CeO ₂ / CZO / CeO ₂ / Ni-W) thin film as shown in FIG. Will be completed.

According to the present invention, the multilayer thin film in which the interfacial slope layer is formed by simultaneous deposition of heterogeneous targets can be manufactured in a single step, thereby improving the interfacial properties of the multilayer thin film and depositing a high quality thin film. In addition, there is an effect of maximizing the time and economic efficiency for the deposition process.

 In addition, it is possible not only to deposit a multilayer thin film having a plurality of interfaces by a deposition process separation plate but also to freely control the number of layers of the multilayer thin film, thereby minimizing the difference in physical properties between the interfaces to achieve optimum physical properties. There is an effect that can deposit a thin film having.

In addition, the distance and angle between the substrate and the spattering gun or the evaporation crucible can be adjusted to not only control the deposition rate but also to deposit a high quality thin film.

In addition, it is expected to be economical and high in utilization since the structure can be simply changed in the existing spattering device or evaporation device.

Claims (28)

In the multilayer thin film deposition apparatus, A plurality of spattering guns are formed in the vacuum chamber, and each of the spattering guns is equipped with a heterogeneous target, a substrate is formed at an equal position from the heterogeneous target, and a screen is formed adjacent to the front side of the substrate. And the heterogeneous target components are simultaneously deposited on the substrate by simultaneous operation of a turing gun to form an interfacial gradient layer on the substrate. The method of claim 1, wherein the sputtering gun, An inclined multilayer thin film deposition apparatus comprising a body portion and a target mounting portion, wherein the body portion is formed of a flexible material so that the angle of the target mounting portion and the distance between the substrate and the target mounting portion are adjusted. The inclined multilayer thin film deposition apparatus according to claim 1, wherein the screen is formed to be horizontal to the substrate surface. According to claim 1, The inclined multilayer thin film deposition apparatus, Wherein the heterogeneous target component is located on the path to reach the substrate, the deposition region separation plate is further formed to control the deposition rate for the heterogeneous target component to separate the deposition region, to form a multi-layer interfacial slope layer Inclined multilayer thin film deposition apparatus characterized in that. The method of claim 4, wherein the deposition region separator, Formed of a plurality, Inclined multilayer thin film deposition apparatus, characterized in that formed in a plate or pipe shape. The method of claim 4, wherein the deposition region separator, Inclined multilayer thin film deposition apparatus, characterized in that the position and the angle is formed to be controlled. The substrate according to any one of claims 1 to 6, wherein An inclined multilayer thin film deposition apparatus, characterized in that it is supplied by reel-to-reel and transported. In the method of depositing a multilayer thin film by adjoining the screen on the front side of the substrate, Mounting a heterogeneous target on each of the plurality of spattering guns formed in the vacuum chamber; Positioning the substrate at an even position from the target; And simultaneously operating the sputtering gun to deposit the target on the substrate at the same time. Method for producing a slanted multilayer thin film, characterized in that the multi-layer interfacial gradient layer containing a target material component is formed on the substrate. The method of claim 8, wherein the sputtering gun, Consists of a body portion and a target mounting portion, the body portion is formed of a flexible material is formed so that the angle of the target mounting portion, and the distance between the substrate and the target mounting portion is formed to control the inclined multilayer thin film. The method of claim 8, wherein the screen is formed to be horizontal to the substrate surface. The method of claim 8, wherein the manufacturing method of the inclined multilayer thin film is Wherein the heterogeneous target component is located on the path to reach the substrate, the deposition region separation plate is further formed to control the deposition rate for the heterogeneous target component to separate the deposition region, to form a multi-layer interfacial slope layer Method for producing a slanted multilayer thin film characterized in that. The method of claim 11, wherein the deposition region separation plate, Formed of a plurality, Method for producing a slanted multilayer thin film, characterized in that formed in a plate or pipe shape. The method of claim 11, wherein the deposition region separation plate, Method for producing a slanted multilayer thin film, characterized in that the position and angle are controlled to be controlled. The substrate according to any one of claims 8 to 13, wherein Method for producing a slanted multilayer thin film, characterized in that it is supplied in reel-to-reel. In the multilayer thin film deposition apparatus, A plurality of evaporation crucibles are formed inside the vacuum chamber, heterogeneous targets are inserted into each evaporation crucible, a substrate is formed at an even position from the evaporation crucible, and a screen is formed adjacent to the substrate. And, by simultaneously heating the evaporation crucible, the heterogeneous target vapor components are simultaneously deposited on the substrate to form an interfacial slope layer on the substrate. The method of claim 15, wherein the evaporation crucible, An inclined multilayer thin film deposition apparatus comprising a body portion and a target insertion portion, wherein the body portion is formed of a flexible material so that the angle of the target insertion portion and the distance between the substrate and the target insertion portion are adjusted. The inclined multilayer thin film deposition apparatus according to claim 15, wherein the screen is formed to be horizontal to the substrate surface. The method of claim 15, wherein the inclined multilayer thin film deposition apparatus, Wherein the heterogeneous target component is located on the path to reach the substrate, the deposition region separation plate is further formed to control the deposition rate for the heterogeneous target component to separate the deposition region, to form a multi-layer interfacial slope layer Inclined multilayer thin film deposition apparatus characterized in that. The method of claim 18, wherein the deposition region separation plate, Formed of a plurality, Inclined multilayer thin film deposition apparatus, characterized in that formed in a plate or pipe shape. The method of claim 18, wherein the deposition region separation plate, Inclined multilayer thin film deposition apparatus, characterized in that the position and the angle is formed to be controlled. The substrate according to any one of claims 15 to 20, wherein the substrate is An inclined multilayer thin film deposition apparatus, characterized in that it is supplied by reel-to-reel and transported. In the method of depositing a multilayer thin film by adjoining the screen on the front side of the substrate, Inserting heterogeneous targets into each of a plurality of evaporation crucibles formed in the vacuum chamber; Positioning the substrate at an even position from the evaporation crucible; And simultaneously operating the evaporation crucible to deposit the target on the substrate simultaneously, wherein the multi-layered interfacial slope layer including the target material component is formed on the substrate. Method for producing a thin film. The method according to claim 22, wherein the evaporation crucible, Consists of a body portion and a target insertion portion, the body portion is formed of a flexible material is formed so that the angle of the target insertion portion, the distance between the substrate and the target insertion portion is formed so as to control the inclined multilayer thin film . 23. The method of claim 22, wherein the screen is formed to be horizontal to the substrate surface. The method of claim 22, wherein the inclined multilayer thin film is manufactured by Wherein the heterogeneous target component is located on the path to reach the substrate, the deposition region separation plate is further formed to control the deposition rate for the heterogeneous target component to separate the deposition region, to form a multi-layer interfacial slope layer Method for producing a slanted multilayer thin film characterized in that. The method of claim 25, wherein the deposition region separation plate, Formed of a plurality, Method for producing a slanted multilayer thin film, characterized in that formed in a plate or pipe shape. The method of claim 25, wherein the deposition region separation plate, Method for producing a slanted multilayer thin film, characterized in that the position and angle are controlled to be controlled. The method of claim 22, wherein the substrate, Method for producing a slanted multilayer thin film, characterized in that it is supplied in reel-to-reel.

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