CN217052381U - Ion-assisted multi-target magnetron sputtering equipment - Google Patents

Abstract

The utility model discloses an ion-assisted multi-target magnetron sputtering device, including uploading the cavity, transporting cavity and technology cavity, transport and be provided with the manipulator in the cavity, be provided with brilliant round platform, at least one ion source device and two at least magnetron devices in the technology cavity, brilliant round platform is located the below, and ion source device and magnetron device are located the top, and ion source device and magnetron device all distribute around the center of brilliant round platform, ion source device all is the angle slope with brilliant round platform towards brilliant round platform with the magnetron and arranges, the utility model discloses can install the ion-assisted PVD sputtering system of a plurality of targets in a technology cavity, need not a plurality of technology cavities, and need not the clamping many times, it is efficient.

Description

Ion-assisted multi-target magnetron sputtering equipment

Technical Field

The utility model belongs to the technical field of magnetron sputtering equipment, more specifically the utility model relates to an ion assisted multi-target magnetron sputtering equipment that says so.

Background

The magnetron sputtering technology and equipment are basic technology and equipment for micro-nano processing, are the core and the foundation of the manufacture in the modern microelectronic industry, are similar to the material preparation industry of steel and the like in the traditional industry, and provide rich and comprehensive various device construction and auxiliary materials for the semiconductor and microelectronic device industry. The magnetron sputtering technology is mature, the prepared film has excellent performance, can be used for manufacturing almost various metal, semiconductor and insulator film materials, and is the core technology of semiconductors, MEMS, solar energy, displays, LEDs and the like and various modern microelectronic devices; the equipment has low cost and wide application, and is necessary equipment for preparing ultraclean of modern semiconductors, microelectronic devices and the like.

Magnetron sputtering apparatus generally comprises at least one process chamber, as shown in fig. 1, in which a substrate table, a target, etc.:

1. the chamber is connected to a vacuum forming device such as a vacuum pump, and after the operation thereof, the chamber is evacuated.

2. Also, the chamber has at least one gas inlet for introducing a process gas, typically argon.

3. The substrate table is used for bearing a substrate, and can be heated, cooled and applied with a bias magnetic field and an electric field according to specific requirements; the substrate table may also be stationary, rotating, tilting, etc.

4. The target is typically connected to an external power source, which may be Direct Current (DC), Radio Frequency (RF), Alternating Current (AC), pulsed direct current (PulsedDC), high power pulsed magnetron sputtering power (HIPIMS), or other energy generating component.

5. Generally, a magnetron is arranged outside the vacuum cavity and on the back of a target backboard and parallel to the target, the magnetron is generally composed of a permanent magnetic material and soft iron, a magnetic field can be formed on the surface of the target, the movement of positive and negative ions and electrons on the surface of the target is controlled, the positive and negative ions and the electrons are bound to a certain area on the surface of the target, the collision probability of the positive and negative ions and the electrons is improved, the ionization rate of process gas is increased, the ion density bombarding the surface of the target is further improved, and the film deposition rate is finally improved.

The film deposited by magnetron sputtering, the substrate temperature, the process gas pressure, the target material power, the target material-substrate distance, the angle, the magnetron and the like have great influence on the organization structure. Generally, in the process of magnetron sputtering deposition of a film at room temperature, the deposited film material is mostly in a non-equilibrium structural state due to high particle energy. Therefore, the obtained film structure is mostly or in an amorphous or microcrystalline state, such as oxide, nitride, semiconductor film material and the like obtained by magnetron sputtering; or a columnar crystal structure which is rich in defects such as defects, impurities, holes and the like and has larger internal stress is formed, such as Cu, Ti, Ta, Cr, NiFe and other metals; the density of the film material is also generally slightly smaller than the theoretical value, and the surface roughness is larger.

Therefore, PVD sputtering equipment is required to improve the density, crystal structure, stress, and other texture properties of the deposited film.

Meanwhile, in practical applications, it is not only necessary to prepare a single-layer thin film, but also to prepare a multi-layer film structure, such as a magnetic tunnel structure (TMR), a giant magnetoresistance structure, a PZT piezoelectric ceramic structure, an optical antireflection film, a reflective film, and the like. Only one target material and only one material can be sputtered and deposited in a single cavity; there are also PVD sputtering systems of cluster structure, i.e. a plurality of PVD sputtering chambers are combined by a transport chamber to form a combined vacuum sputtering system, however, such a system requires a plurality of sets of vacuum forming equipment, which is too costly, and the throughput of the machine is reduced because the transportation of the wafer also requires time.

Therefore, there is a need for a PVD sputtering apparatus capable of mounting a plurality of targets in a single chamber, so as to facilitate sputtering of multiple layers, improve productivity, and reduce manufacturing cost of the apparatus.

Meanwhile, in practical applications, the deposited thin film is usually required to achieve a certain coverage (conformal coating) for the 3D structure existing on the wafer, that is, the thickness of the thin film deposited on the edge and corner of the 3D structure is in a certain proportion to the thickness of the thin film deposited on the plane, and the organization structure and performance of the thin film are consistent. The PVD sputtering mode shown in fig. 1 is a face-to-face deposition, i.e., the target surface is parallel to the wafer surface, which results in a low coverage.

Therefore, there is a need for a PVD sputtering system that can control, improve the texture properties of the deposited thin film, form blanket deposits, and provide multiple targets in one chamber.

SUMMERY OF THE UTILITY MODEL

The utility model provides a to prior art not enough, the utility model provides a can be in the supplementary PVD sputtering system of ion of a plurality of targets of a technology cavity device, need not a plurality of process chamber, and need not repetitious clamping, efficient.

In order to achieve the above purpose, the utility model provides a following technical scheme: the utility model provides an ion assisted multi-target magnetron sputtering equipment, includes and uploads the cavity, transports cavity and technology cavity, transports the intracavity and is provided with the manipulator, be provided with crystal round platform, at least one ion source device and two at least magnetron devices in the technology cavity, crystal round platform is located the below, and ion source device and magnetron device are located the top, and ion source device and magnetron device center evenly distributed around crystal round platform, ion source device and magnetron all are towards crystal round platform and with crystal round platform be the angle slope and arrange.

Further the top of the process chamber is dome shaped and all magnetron and ion source apparatus are evenly distributed around the centre of the top of the dome.

Furthermore, a baffle window is arranged in the process cavity and is positioned below the ion source device and the magnetrons, and shutters which can be independently opened are arranged below the baffle window, which corresponds to the ion source device and each magnetron.

Further still be provided with the baffle window in the technology cavity, be provided with an opening on the baffle window, the baffle window rotates with the technology cavity and is connected, and the rotation axis of baffle window overlaps with the top center of domatic.

The magnetron device further comprises a target backboard, a magnetron backboard and a protective cover, wherein the target is arranged on the front side of the target backboard, the magnetron backboard is located on the rear side of the target backboard, the magnetron is arranged on the front side of the magnetron backboard, the magnetron backboard is connected with a first motor for driving the magnetron backboard to rotate, the target backboard is connected with a power supply, and the protective cover covers the target backboard so that the magnetron backboard and the magnetron cover are arranged inside.

And a cooling water path is further arranged in the target material back plate.

Further the ion source device comprises a base and a sealed metal box, wherein a quartz tube is arranged in the sealed metal box, the quartz tube and the base form a vacuum cavity, a coil is arranged outside the quartz tube, and the quartz tube is connected with an antenna.

Furthermore, the connecting surface of the base and the quartz tube is set as a metal grid.

The wafer table further comprises a wafer bracket, a heater, a support, a cavity vacuum flange, an additional support and an extension tube which are sequentially arranged from top to bottom, wherein the extension tube is connected with a second motor, and the additional support is connected with a third motor.

Compared with the prior art, the beneficial effects of the utility model are that: the ion-assisted multi-target cavity is adopted, a plurality of targets are arranged in one cavity, the sputtering of multilayer films, such as TMR, GMR, AR, HR, PZT and other films, can be completed at one time, the productivity is improved, and meanwhile, a plurality of same targets, such as PZT, can be arranged, and the deposition rate and the production efficiency are improved; the size of the target can be reduced due to the inclined sputtering, and the cost of precious metals such as Pt target is saved; on the other hand, the coverage of 3D structures can be increased (conformal coating); meanwhile, the ion source can also generate high-density and relatively low-energy ions to bombard the substrate, and the ion bombardment kinetic energy can be partially converted into the kinetic energy of particles deposited on the surface of the substrate, so that the mobility of the particles on the substrate is improved, and the performance of the film is improved.

Drawings

FIG. 1 is a schematic diagram of a prior art magnetron sputtering apparatus;

fig. 2 is a schematic top view of the present invention;

FIG. 3 is a schematic view of the process chamber of the present invention;

FIG. 4 is a schematic view of a magnetron apparatus according to the present invention;

FIG. 5 is a schematic view of an ion source apparatus according to the present invention;

FIG. 6 is a schematic view of a shutter window having a plurality of shutters according to the present invention;

FIG. 7 is a schematic view of the middle fender window of the present invention having an opening;

fig. 8 is a schematic view of a middle wafer stage according to the present invention.

Reference numerals are as follows: 1. an uploading cavity; 2. a transport cavity; 21. a manipulator; 3. a process chamber; 4. a valve; 5. a wafer; 6. a magnetron device; 61. a motor; 62. a drive shaft; 63. a power source; 64. a protective cover; 65. a magnetron back plate; 66. a magnet; 67. a target material; 68. a target backing plate; 7. an ion source device; 71. sealing the metal box; 72. an antenna; 73. a power source; 74. a quartz tube; 75. a coil; 76. a base; 8. a shutter window; 81. a shutter; 82. an opening; 9. a wafer table; 91. a conduit; 92. a telescopic pipe; 93. a motor A; 94. a wafer carrier; 95. a heater; 96. a bracket; 97. a cavity vacuum flange; 98. an additional bracket; 99. and a motor B.

Detailed Description

Embodiments of the ion-assisted multi-target magnetron sputtering apparatus of the present invention are further described with reference to fig. 2 to 8.

In the description of the present invention, it should be noted that, for the orientation words, such as the terms "center", "lateral (X)", "longitudinal (Y)", "vertical (Z)", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., the orientation and the positional relationship are indicated based on the orientation or the positional relationship shown in the drawings, and the description is only for convenience of describing the present invention and simplifying the description, but not for indicating or implying that the device or the element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as limiting the specific protection scope of the present invention.

Furthermore, if any, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features. Thus, the definition of "a first" or "a second" feature may explicitly or implicitly include one or more of the features, and "a plurality" or "a plurality" in the description of the invention means two or more unless a specific definition is explicitly provided.

An ion-assisted multi-target magnetron sputtering device comprises an uploading cavity 1, a transporting cavity 2 and a process cavity 3, wherein a manipulator 21 is arranged in the transporting cavity 2, a wafer table 9, at least one ion source device 7 and at least two magnetron devices 6 are arranged in the process cavity 3, the wafer table 9 is positioned below, the ion source device 7 and the magnetron devices 6 are positioned above, the ion source device 7 and the magnetron devices 6 are distributed around the center of the wafer table 9, and the ion source device 7 and the magnetron devices are both arranged towards the wafer table 9 and are inclined at an angle with the wafer table 9.

As shown in fig. 2, the upper loading cavity 1 is used for loading a wafer 5 placed in a wafer cassette, a vacuum valve 4 is arranged between the upper loading cavity 1 and the transport cavity 2, and a manipulator 21 in the transport cavity 2 can extend into the upper loading cavity 1 to obtain the wafer after the valve 4 is opened and transport the wafer into the transport cavity 2; a valve 4 is also arranged between the conveying cavity 2 and the process cavity 3, after the valve 4 is opened, the manipulator 21 loaded with the wafer extends into the process cavity 3, and the wafer is conveyed to the wafer table 9 in the process cavity 3, so that the process of uploading the wafer to the process cavity 3 is completed, and the set process flow can be implemented on the wafer 5 in the process cavity 3.

Similarly, after the process flow is completed, the robot 21 in the transport chamber 2 may complete the process of downloading the wafer 5 in a reverse order.

As shown in fig. 3, the process chamber 3 has four magnetrons 6 and one ion source 7.

The upper part of the process cavity 3 can be of a dome structure; four magnetron devices 6 and one ion source device 7 are uniformly distributed around the center of the dome-shaped structure, the layout can fully utilize the space, and more magnetrons and ion sources are placed on the vacuum cavity as much as possible; meanwhile, the magnetron device 6 and the ion source device 7 form an included angle alpha relative to the wafer table 9, so that inclined sputtering is formed, and wrapping deposition of a 3D structure is facilitated.

Wherein the ion source is a device that generates a beam of charged particles (particles, molecules, Cluster), it is common in semiconductor and microelectronic fabrication to deposit or etch materials or devices using an ion source.

In the ion-assisted sputtering process, because the ion source can generate high-density and relatively low-energy ions to bombard the substrate, the ion bombardment kinetic energy can be partially converted into the kinetic energy of particles deposited on the surface of the substrate, so that the particle mobility on the substrate is improved, and for a film deposited on the substrate:

1. loose connection between atoms and molecules can be reduced, so that tight connection and tight arrangement between the atoms and the molecules are improved, and a compact, high-density and low-defect film layer is formed.

2. The columnar crystal structure can be reduced, larger crystal grains can be formed, and the structure of the film is closer to a single crystal.

3. The roughness of the film layer can be reduced.

4. The adhesion between the film and the substrate can be increased.

5. The high substrate temperatures required to form high density, single crystal (or large grain) thin film structures can be reduced.

6. A conformal deposition (conformal coating) of the 3D structure may be formed.

7. Can be used to adjust the internal stress of the deposited film.

8. The film deposition rate can be increased.

9. For reactive sputtering, uniformity of the chemical composition of the film can also be improved by ionizing the reactive gas.

As shown in fig. 5, it is a schematic diagram of a typical ion source device 7, which is a helicon wave plasma source, i.e. a plasma that is excited by helicon wave to discharge, the helicon wave is excited by a radio frequency antenna and propagates in a cylindrical plasma column with a limited diameter along the axial magnetic field direction, and has a structure of whistling wave and transverse wave mode, and its energy is absorbed by electrons through collision or collision-free damping, and the helicon wave plasma source has good and wide application prospects in the fields of integrated circuit technology, thin film deposition, etching, surface modification and plasma propulsion, due to its advantages of high ionization efficiency, high electron density, low confinement magnetic field, relatively simple structure, and capability of discharging electricity under low pressure. Wherein the content of the first and second substances,

71 is a sealed metal box for protecting internal devices, grounding and isolating electromagnetic interference;

72 is an antenna, after the power supply is started, RF energy is guided into the quartz cavity, gas in the quartz tube is ionized, and plasma is generated;

73 is a power supply, an RF power supply and a network matcher;

74 is a quartz tube to form a vacuum chamber;

75 is a coil which is connected with a direct current power supply, after the power supply is started, an electromagnetic field is generated, and the direction of the magnetic field in the quartz tube is parallel to the axis of the quartz tube;

the 76 is a base, supports the ion source, and is connected with the vacuum cavity by O-ring to form a uniform vacuum with the cavity in the quartz tube, and the connection surface of the base and the quartz tube can also be formed by a metal grid mesh to form a plurality of parallel ion beams at the outlet of the device.

As shown in fig. 4, which is a schematic view of a typical magnetron apparatus 6. Wherein the content of the first and second substances,

61 is a motor which drives the magnetrons (5, 6) to rotate through a transmission shaft, a transmission belt and the like;

62 is a transmission shaft which is connected with a motor and a magnetron;

the power supply 63 is connected with the target material (7) through the connecting back plate (8) to provide energy for the target material to form plasma and bombard the surface of the target material;

and 64 is a protective cover, typically grounded. The functions of protecting internal charged devices and shielding external electromagnetic interference are achieved;

65 is a magnetron back plate, so that the magnet (6) can be fixed on the back plate to form a magnetic path. Meanwhile, magnetic shielding is formed on the other surface connected with the magnet;

the 66 is a magnet, and a plurality of magnets are arranged into a certain shape to form a certain magnetic field and form magnetron sputtering, so that the deposition efficiency is improved;

67 is a target material;

and 78, a target material back plate, wherein the target material is fixed on the target material back plate, a cooling water path is arranged in the target material back plate, the target material can be cooled, and the target material back plate is connected with a power supply through a lead to provide energy for the target material.

As shown in fig. 6, a baffle window 8 is further disposed in the process chamber 3, the baffle window 8 is located below the ion source device 7 and the magnetrons, shutters 81 capable of being opened independently are disposed below the baffle window 8 corresponding to the ion source device 7 and each magnetron, and when one of the shutters 81 is opened, the corresponding magnetron device 6 or ion source device 7 can form a magnetron sputtering or etching process on the wafer; when one shutter 81 is closed, the corresponding magnetron device 6 or ion source device 7 cannot perform magnetron sputtering or etching process on the wafer.

The shutter window 8 in fig. 6 can also have a plurality of shutters 81 opened simultaneously, and a plurality of corresponding magnetron devices 6 or ion source devices 7 can simultaneously form magnetron sputtering or etching processes on the wafer, which is very beneficial for sputtering alloy films, or increasing sputtering rate (using the same target material), or ion-assisted magnetron sputtering to improve film performance.

As shown in fig. 7, another structure of the baffle window 8 in the process chamber 3 has a single opening 82, when the opening 82 is rotated to a certain magnetron device 6 or ion source device 7, the magnetron device 6 or ion source device 7 can form magnetron sputtering or etching process on the wafer; when the opening 82 is not under a certain magnetron or ion source, the magnetron device 6 or the ion source device 7 can not form magnetron sputtering or etching process on the wafer, and is in a closed state, and the baffle window 8 has the advantages of simple structure and easy operation.

As shown in fig. 8, a typical wafer stage 9 is used for carrying wafers. Wherein, the first and the second end of the pipe are connected with each other,

5 is a wafer;

92 is a telescopic tube which allows the sample holders (94, 95, 96) to move up and down in the vertical direction under the action of the motor A;

motor A at 93, which can drive sample rack (94, 95, 96) to move up and down vertically;

94 a wafer carrier for heating the wafer;

95 is a heater, which can be used to heat the wafer;

96 is a bracket support for supporting the sample holder;

97 is a vacuum flange for isolating the inside and outside of the chamber to form a vacuum chamber;

98 is an additional support which can assist the wafer carrier 94 and the wafer 5 to move up and down in the vertical direction under the action of a motor B so as to complete the up-and-down loading of the wafer;

motor B99 for driving the wafer 5 and the wafer carrier 94 to move vertically to complete the loading and unloading of the wafer;

and 91 is a conduit, which is a lead-out port of a heater 95 lead, a thermocouple and a bias voltage lead.

Such a wafer stage 9 can have a plurality of functions such as rotation, vertical movement, heating, bias field application, and the like.

It is above only the utility model discloses a preferred embodiment, the utility model discloses a scope of protection not only limits in above-mentioned embodiment, and the fan belongs to the utility model discloses a technical scheme under the thinking all belongs to the utility model discloses a scope of protection. It should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (9)

1. The utility model provides an ion-assisted multi-target magnetron sputtering device, includes and uploads the cavity, transports cavity and technology cavity, transports and is provided with the manipulator in the cavity, its characterized in that: the wafer table, the at least one ion source device and the at least two magnetron devices are arranged in the process cavity, the wafer table is located below, the ion source device and the magnetron devices are located above, the ion source device and the magnetron devices are distributed around the center of the wafer table, and the ion source device and the magnetron devices face the wafer table and are obliquely arranged at an angle with the wafer table.

2. The ion-assisted multi-target magnetron sputtering apparatus of claim 1, wherein: the top of the process chamber is dome-shaped, and all the magnetron and ion source devices are uniformly distributed around the center of the top of the dome.

3. The ion-assisted multi-target magnetron sputtering apparatus of claim 2, wherein: and a baffle window is also arranged in the process cavity, is positioned below the ion source device and the magnetrons, and is provided with a shutter which can be independently opened corresponding to the ion source device and below each magnetron.

4. The ion-assisted multi-target magnetron sputtering apparatus of claim 2, wherein: the novel process cavity is characterized in that a baffle window is further arranged in the process cavity, an opening is formed in the baffle window, the baffle window is rotatably connected with the process cavity, and the rotating axis of the baffle window is overlapped with the center of the top of the dome shape.

5. The ion-assisted multi-target magnetron sputtering apparatus according to claim 3 or 4, characterized in that: the magnetron device comprises a target material back plate, a magnetron back plate and a protective cover, wherein a target material is arranged on the front side of the target material back plate, the magnetron back plate is located on the rear side of the target material back plate, a magnetron is arranged on the front side of the magnetron back plate, the magnetron back plate is connected with a first motor driving the magnetron back plate to rotate, the target material back plate is connected with a power supply, and the protective cover covers the target material back plate to enable the magnetron back plate and the magnetron cover to be arranged inside.

6. The ion-assisted multi-target magnetron sputtering apparatus of claim 5, wherein: and a cooling water path is arranged in the target material back plate.

7. The ion-assisted multi-target magnetron sputtering apparatus of claim 6, wherein: the ion source device comprises a base and a sealing metal box, wherein a quartz tube is arranged in the sealing metal box, the quartz tube and the base form a vacuum cavity, a coil is arranged outside the quartz tube, and the quartz tube is connected with an antenna.

8. The ion-assisted multi-target magnetron sputtering apparatus of claim 7, wherein: the connecting surface of the base and the quartz tube is set as a metal grid.

9. The ion-assisted multi-target magnetron sputtering apparatus of claim 8, wherein: the wafer table comprises a wafer bracket, a heater, a support, a cavity vacuum flange, an additional support and an extension tube which are sequentially arranged from top to bottom, wherein the extension tube is connected with a second motor, and the additional support is connected with a third motor.

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