CN118076569A - 用于合成二硼化钛粉末的方法 - Google Patents
用于合成二硼化钛粉末的方法 Download PDFInfo
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- CN118076569A CN118076569A CN202280066752.0A CN202280066752A CN118076569A CN 118076569 A CN118076569 A CN 118076569A CN 202280066752 A CN202280066752 A CN 202280066752A CN 118076569 A CN118076569 A CN 118076569A
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- titanium oxide
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- 239000000843 powder Substances 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000002194 synthesizing effect Effects 0.000 title claims description 11
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 title description 11
- 229910033181 TiB2 Inorganic materials 0.000 title description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000000203 mixture Substances 0.000 claims abstract description 51
- 239000002245 particle Substances 0.000 claims abstract description 50
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 39
- 229910052580 B4C Inorganic materials 0.000 claims abstract description 34
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 238000010926 purge Methods 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 238000003786 synthesis reaction Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- -1 alkali metal salt Chemical class 0.000 claims description 8
- 239000006229 carbon black Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000002006 petroleum coke Substances 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000002441 X-ray diffraction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- XGNZNBRDPPLKTC-UHFFFAOYSA-N aluminium diboride Chemical compound [Al]1B=B1 XGNZNBRDPPLKTC-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000003125 aqueous solvent Substances 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000000571 coke Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- ZRBFEDMQRDRUDG-UHFFFAOYSA-N silicon hexaboride Chemical compound B12B3[Si]45B3B2B4B51 ZRBFEDMQRDRUDG-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000002028 Biomass Substances 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
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- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000007792 addition Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000011780 sodium chloride Substances 0.000 description 5
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
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- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- FMMWHPNWAFZXNH-UHFFFAOYSA-N Benz[a]pyrene Chemical compound C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC=CC2=C1 FMMWHPNWAFZXNH-UHFFFAOYSA-N 0.000 description 2
- GYFAGKUZYNFMBN-UHFFFAOYSA-N Benzo[ghi]perylene Chemical group C1=CC(C2=C34)=CC=C3C=CC=C4C3=CC=CC4=CC=C1C2=C43 GYFAGKUZYNFMBN-UHFFFAOYSA-N 0.000 description 2
- HAXBIWFMXWRORI-UHFFFAOYSA-N Benzo[k]fluoranthene Chemical compound C1=CC(C2=CC3=CC=CC=C3C=C22)=C3C2=CC=CC3=C1 HAXBIWFMXWRORI-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 150000008045 alkali metal halides Chemical group 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- FTOVXSOBNPWTSH-UHFFFAOYSA-N benzo[b]fluoranthene Chemical compound C12=CC=CC=C1C1=CC3=CC=CC=C3C3=C1C2=CC=C3 FTOVXSOBNPWTSH-UHFFFAOYSA-N 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002490 spark plasma sintering Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- TXVHTIQJNYSSKO-UHFFFAOYSA-N BeP Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC4=CC=C1C2=C34 TXVHTIQJNYSSKO-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- LHRCREOYAASXPZ-UHFFFAOYSA-N dibenz[a,h]anthracene Chemical compound C1=CC=C2C(C=C3C=CC=4C(C3=C3)=CC=CC=4)=C3C=CC2=C1 LHRCREOYAASXPZ-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000012070 reactive reagent Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
- C04B35/58064—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides
- C04B35/58071—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides based on titanium borides
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- C04B35/62605—Treating the starting powders individually or as mixtures
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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Abstract
本发明涉及一种用于制备TiB2粉末的方法,包括在硼源存在下用碳还原氧化钛,所述方法包括加热碳源、碳化硼粉末和氧化钛粉末的混合物,其中碳化硼粉末的中值粒径在5μm和100μm之间,氧化钛粉末的中值粒径在5μm和80μm之间,所述混合物被放置在外壳中,在1500℃和2000℃之间的温度下,在0.5‑10L/min/m/m3外壳的惰性气体吹扫流速下;以及通过这种方法获得TiB2粉末。
Description
本发明涉及一种用于制备或合成二硼化钛的新方法。
二硼化钛是一种具有低密度(约4.5g/cm3)、高硬度、高热导率和低电阻率的陶瓷材料。这使其成为用于多种应用的潜在有益的材料,特别地屏蔽和防弹保护、耐火材料应用(其中热传导和高导电性是优点)、特别地热交换器、电解反应器的阳极或阴极的涂层或甚至组成、或甚至在某些温度应用中或在极具腐蚀性的化学介质中的膜、以及金属的切削工具(特别地用于有色金属)、或切削工具。
所有这些应用都说明了对这种材料的需求非常高,并且目前正在增加。
TiB2在自然状态中并不存在。所述二硼化钛可以例如通过钛(或其氧化物或氢化物)与元素硼在1000℃直接反应或通过氧化钛和氧化硼的碳热还原而获得。在后一种情况下,所述反应包括根据以下简化反应在1500℃以上的温度下使粉末的混合物进行反应:
TiO2(s)+B2O3(s)+5C(s)→TiB2(s)+5CO(g)(1)
然而,这种方法具有仅约30%的理论材料效率。
另一种鲜为人知的方法在于特别地用碳化硼代替氧化硼粉末,如以下平衡反应所示:
2TiO2+B4C+3C→2TiB2+4CO(2)
这种反应的优点是其更好的理论材料产率(55.4%)和因此释放更少的一氧化碳,但是其具有需要更高的反应温度的缺点。
氧化钛的来源通常是具有大于95%TiO2含量的矿物来源。碳源通常且优先为石油焦(石油蒸馏残留物)或炭黑。碳化硼也是一种可在碳化物粉末(特别地磨料)市场上获得的合成材料。
然而,随着所获得的二硼化钛的最终粉末变得更细(通常具有在5μm和50μm之间的中值直径)或超细(小于5μm的中值直径),用于制备这种材料的方法全都是更加昂贵和耗能的。
在国际综述“Journal of Refractory Metals and Hard Materials 25(2007)第345-350页”中由C.Subrmania等发表的文章“Synthesis and consolidation oftitaniumdiboride”提议了例如一种使得可以获得非常纯的最终粉末(大约0.5%的氧、氮和碳的含量)的方法。该方法包括将高纯度粉末(大于95%的多数化合物含量)、具有0.8μm的中值直径的氧化钛、具有6.7μm的中值直径的碳化硼和石油焦的混合物在有机溶剂中进行反应,干燥并且然后在对应于小于或等于4.10-5mbar的残余压强的真空中加热至至少1800℃的温度。低于这个温度,所获得的粉末是过于纯的。该文章教导了使用细(亚微米)粒度并因此更具反应性的试剂粉末(特别地氧化钛)来改善反应产率和动力学。
用于更好地控制该反应的另一种解决方案包括用相对于所述反应(1)所需的化学计量理论量过量至少10质量%、或甚至20质量%的B4C的方法。这种额外的添加使得可以在高温下以气态形式填充硼的损失,并且减少TiC和残余碳的存在,但使该方法的实际材料产率处于不利地位。
本发明的目的是因此改善上述并由公式(2)说明的合成方法,以获得纯的细TiB2粉末,即,具有大于95%的质量百分比的TiB2粉末,或甚至非常纯的,即,具有大于或等于98%的纯度的TiB2粉末,所述粉末具有低元素氧含量并且也有利地具有低元素碳含量,同时保持高的材料产率,无需采用工业上复杂的粉末合成工艺。
特别地,根据第一个方面,本发明涉及用于在低于2000℃的温度下制备TiB2的替代方法,满足该目的凭借于特定的气氛条件和适当选择的起始粉末,而无需任何催化剂或表面活性剂添加剂。
更具体地,本发明涉及一种用于制备TiB2粉末的方法,其包括在硼源的存在下用碳还原氧化钛,所述方法加热原材料混合物,该原材料混合物包含,并且优选由以下组成:
a)氧化钛粉末,优选为粉末形式,其TiO2质量百分比为至少95质量%,和
b)碳来源,优选其碳的质量百分比为至少90%的碳来源,和
c)碳化硼粉末,其优选具有至少90%、优选至少95%的质量百分比的B4C,
-在高于1500℃、优选高于1600℃、和低于2000℃、优选低于190℃的温度下,
-其各自的比例使得根据以下平衡反应将氧化钛还原为硼化钛:
2TiO2+B4C+3C→2TiB2+4CO (2)
所述方法的特征在于:
-所述碳化硼粉末的中值粒径在5μm和100μm之间,和
-所述氧化钛粉末的中值粒径在5μm和80μm之间,和
-所述过量碳化硼少于5质量%,优选少于2质量%,相对于所述反应(2)必需的化学计量量计,
-所述合成是在外壳(enclosure)中在惰性气流下进行,
-在所述外壳中的气流的流速为0.5L/min/m3外壳-10L/min/m3外壳。
根据本发明,所述惰性气体被带入到外壳中与原材料的混合物进行接触。本发明在于不仅选择上述起始粉末的粒度,而且在于选择前述特定的合成条件,这样的组合有利地使得可以获得具有最大材料产率的高纯度的细TiB2粉末,如将在下面进行更详细描述的。
本发明的方法特别地包括一个或多个以下优选的特征:
-所述碳化硼粉末的中值粒径大于7μm,优选大于或等于10μm。
-所述碳化硼粉末的中值粒径小于80μm,优选小于50μm,或甚至小于30μm。
-所述氧化钛粉末的中值粒径大于7μm,优选大于或等于10μm。
-根据一个优选的实施方案,所述碳化硼粉末的中值粒径大于7μm并且所述氧化钛粉末的中值粒径大于7μm,
-所述氧化钛粉末的中值粒径(D50)小于50μm,优选小于30μm。
-所述碳化硼粉末的颗粒的直径D90小于100μm,优选小于80μm,优选小于或等于50μm,更优选小于或等于40μm,
-所述氧化钛粉末的颗粒的直径D90小于100μm,优选小于80μm,优选小于或等于50μm,更优选小于或等于40μm,
-所述碳化硼粉末的中值粒径与所述氧化钛粉末的中值粒径之比大于0.8,优选大于或等于1。
-所述碳化硼粉末的中值粒径与所述氧化钛粉末的中值粒径之比小于5,优选小于2。
-所述氧化钛粉末是金红石或锐钛矿粉末,优选金红石。
-在所述氧化钛粉末中SiO2+Al2O3+ZrO2的质量百分比小于5%。
特别地,在所述氧化钛粉末中SiO2的含量按质量计为优选小于或等于2%。在所述氧化钛粉末中Al2O3的质量百分比为优选小于或等于2%,优选小于1%。在所述氧化钛粉末中ZrO2的质量百分比为优选小于或等于1%。
-所述碳化硼粉末的元素氧含量为小于或等于5%,优选小于3%,更优选小于2%。
-所述碳源选自焦炭,特别地石油焦、煤或选自生物质、石墨或炭黑。
-在所述碳源中元素碳的质量百分比大于95%,优选的大于97%。
-所述碳源(如果它是焦炭的形式)已经经过脱氢处理,使得其根据ISO/TS12902标准的元素氢的质量百分比为小于1%,并且非常优选小于0.5%,或甚至小于0.1%。优选地,对于以下HAP化合物中的每一种,含量小于10ng/mg:萘、苊、芴、菲、蒽、芘、苯基[a]蒽、苯并[a]芘、二苯并(a,h)蒽、苯并[ghi]苝、苯并[k]荧蒽、荧蒽、苯并[b]荧蒽和In(1,2,3,c,d,)P)。
-将所述原材料预先在室温和150℃之间的温度下进行干燥。
-合成温度大于或等于1600℃且优选小于1800℃。
-所述外壳的压强被保持几乎恒定,例如在0.5巴和1.5巴之间,并且甚至更优选地,所述外壳在大气压下(1巴)。
-吹扫在其中放置所述混合物的外壳的气体优选为稀有气体,例如氩气或氦气,优选氩气。在正常压强和温度条件下测量的流速优选地为每m3外壳0.5L/min至5L/min,优选地每m3外壳0.5L/min-3L/min,优选地每m3外壳0.5L/min-2L/min。过低的吹扫导致不完全的反应,并且更特别地导致不期望的存在于二硼化钛的最终粉末中的碳残留物。太高的流速由于需要较高的能量供应以伴随化学反应动力学而使反应(2)的产率处于不利的地位。每m3外壳0.5L/min至10L/min的气体吹扫流速更特别地适合于具有通常在20KW和80KW之间的能量功率的反应器。这种反应器被用于加热对于等于2.5升的体积的外壳来说可以最多达到500g的混合物。
-每m3外壳每kW加热功率的0.005L/min-1L/min的惰性吹扫气体流速是特别优化的,优选每m3外壳每kW外壳加热功率0.01L/min-0.5L/min。
根据第一种可能的方式,可以添加碱金属盐,例如根据按质量计在0.5%和15%之间、优选在5%和15%之间的比例的金属,相对于碳源、碳化硼粉末的颗粒和氧化钛颗粒的总质量计。这种供应减少了在合成粉末中团聚体的存在,该团聚体可能中断烧制由这种TiB2合成粉末获得的烧结陶瓷体的步骤。
添加小于0.5%的碱金属盐不足以使温度大于1500℃,特别地在1600℃和1200℃之间。大于15%的供应导致在TiB2粉末的合成期间硼的过度蒸发。
根据本发明的有利的实施方案,所述碱金属选自Li、Na、K。优选地,所述碱金属盐是碱金属卤化物,优选氯化物。更优选地,它是氯化钠。
碱金属盐颗粒的中值尺寸为优选在0.5μm和100μm之间,更优选在5μm和50μm之间。
本发明也涉及根据前述方法获得的TiB2粉末。该粉末的中值粒径在5μm和50μm之间,并且其包含以下元素质量百分比:
-钛(Ti):大于67%,
-硼(B):大于28%,
-氧(O):小于1.3%,优选小于1.2%
-碳(C):小于0.5%
-氮(N):小于0.5%
-硫(S):小于400ppm、优选小于300ppm或甚至小于150ppm,
-铁(Fe):小于0.45%,
-优选Li+Na+Rb+Cs之和小于1%,
-优选其它元素的总和小于2%。
优选地,氧(O)+氮(N)+碳(C)的总和小于1.5%,或甚至小于或等于1.2%。
这种高纯度和明确粒度的TiB2粉末使得可以通过烧结而获得具有小于7体积%的总孔隙率的烧结陶瓷体,而不使用所述过渡金属如Ni、Fe或Co的添加,其能够导致由这些不期望的金属形成次生金属硼化物。
用前述方法获得的粉末(在粉末的合成期间将碱金属盐以如上规定的比例加入至其中)具有非常高的均匀性,这引起非常低的晶体尺寸分散度。这种粉末使得可以获得为部件形式的烧结陶瓷体,其至少一个尺寸,优选全部整体尺寸大于5cm,或者甚至大于10cm,并且具有也小于7%的总孔隙率、非常窄的孔径分布,而在烧结时没有变形并且没有收缩开裂。
优选地,根据本发明的TiB2粉末进一步包含以下元素质量百分比的一种或多种:
-钛(Ti):大于68%和/或小于72%,
-硼(B):大于29%和/或小于33%,
-碳(C):小于0.5%,
-氧(O):小于1%,优选小于0.5%,或硫(S)小于300ppm,小于100ppm,优选小于50ppm,
-氮(N):小于0.5%,
-铁(Fe):小于0.4%,
-优选磷(P):小于0.3%,优选小于0.2%,优选小于0.1%,
-优选硅(Si):小于0.1%,优选小于500ppm,
-碱土(Be+Mg+Ca+Sr+Ba):小于0.25%。
所述TiB2粉末进一步包含小于1%、优选小于0.5%的SiC含量,和小于1%、优选小于0.5%的TiC含量。
根据本发明的TiB2粉末不包含结晶相,如,B4C或TiC相、或如通过X射线衍射测量(可检测)的Ti2O3、Ti3B4、SiC。优选地,所述粉末仅包含如通过X射线衍射测量(可检测)的TiB2的结晶相。
本发明也涉及一种混合物,该混合物包含90质量%-99.9质量%的根据本发明的TiB2粉末和0.1质量%-10质量%的一种或多种烧结粉末或甚至由它们组成,该一种或多种烧结粉末选自二硼化铝、二硼化镁、二硼化锆、五硼化钨、六硼化钙、六硼化硅,优选其纯度大于95质量%,优选大于98质量%。
大于95质量%的纯度是所述相或最稳定的主要化合物的纯度:例如在二硼化铝粉末的情况下,大于95质量%的AlB2,或对于五硼化钨粉末,含有大于95质量%的W2B5。
本发明同样涉及一种用于制备烧结陶瓷体的方法,该方法包括以下步骤:
a)制备起始进料,该起始进料包含:
-如通过根据本发明的方法获得的TiB2粉末或包含所述粉末和一种或多种所述烧结粉末的如上所述的粉末混合物;
-水性溶剂,特别地去离子水,
-优选地,成形添加剂,
b)将所述进料成形为预成形件(preform)形式,优选通过压制进行
c)在固化或干燥之后从模具中移出;
d)任选地,干燥所述预成形件,优选直至残余水分含量在0重量%和0.5重量%之间,
e)将其装入炉中并在惰性气氛下(优选在氩气下,或在真空下),优选在1600℃和2200℃之间的温度下烧制所述预成形件。
本发明也涉及由此获得的烧结陶瓷体和通过前述方法获得的烧结陶瓷体作为膜,特别地用于液体或气体的过滤的膜的全部或部分、屏蔽或防弹保护元件、覆盖物或耐火块、阳极涂层或块或阴极涂层或块,特别地电解反应器、热交换器、金属熔化坩埚(特别地用于有色金属)、切削工具的用途。
结合本发明的前面描述给出了以下指示和定义:
-在本说明书中,除非另有明确规定,所有百分比都是基于干材料按重量计给出的。
-所述材料产率通过将获得的TiB2原料粉末的质量除以由在热处理前的试剂粉末的干混合物(水分小于2%)获得的TiB2原料粉末的理论质量进行计算。例如,在根据所述反应(2)的化学计量条件下,100%的产率对应于从100g由氧化钛、碳和碳化硼粉末组成的混合物开始的55.4g的粗制粉末的质量。
-粗制粉末是指在混合物加热和反应之后以及在任选地额外处理(如,例如筛分或研磨)之前在外壳的出口处直接获得的粉末。
-构成粉末的颗粒的中值直径(或所述中值“尺寸”)在本发明的意义内通过表征粒度分布、特别地通过激光粒度仪给出。粒度分布的表征照惯例根据ISO 13320-1标准用激光粒度分析仪进行。所述激光粒度分析仪可以是例如来自HORIBA的ParticaLA-950。为了本说明书的目的以及除非另有提及,所述中值粒径分别是指这样的粒径,存在该群体的50质量%低于该粒径。被称为粉末的一组颗粒的“中值直径”或“中值尺寸”,D50百分位,即,将所述颗粒分成体积相等的第一和第二群体的尺寸,这些第一和第二群体仅包含具有尺寸分别大于或小于所述中值尺寸的颗粒。
-基本化学物质的含量可以根据ISO 21068:2008标准进行测定。
特别地:
-O、N、C和S的含量通过品牌的分析仪进行测量,
-Si、碱金属、碱土金属、Fe、P的含量可以通过ICP(感应耦合等离子体)进行测量,
-B和Ti的含量优选通过ICP测定;
-TiB2以及其它结晶化合物的存在和相对含量可以常规地通过X射线衍射分析进行测量。
-陶瓷体的总孔隙率是例如根据ISO 18754测量的堆积密度与例如根据ISO 5018测量的绝对密度的比率,以百分比表示。
除非另有说明,否则在本说明书中的所有百分比是质量百分比。
附图:
图1示出了按照根据本发明的实施例2在不添加NaCl的合成之后的粗制粉末。
图2示出了按照根据本发明的实施例4在包括添加NaCl的合成之后的粗制粉末。
图3示出了允许实施本方法的反应器1,该反应器1包含外壳2,以便通过加热混合物3而用惰性气体4吹扫混合物3,以获得根据本发明的粗制粉末。
详细描述
本发明和其优点将在阅读以下给出的更详细的描述后被更好地理解。当然,本发明在下面描述的任何方面中都不限于这种方式。
包含碳源(例如炭黑,其C的质量百分比大于90%,优选大于95%)、氧化钛的粉末(例如金红石或锐钛矿粉末,其TiO2的质量百分比大于95%)和碳化硼粉末(例如其B4C质量百分比大于90%的粉末)的起始混合物是对于本领域技术人员而言的标准条件下进行的。这种制备所述干混合物的步骤允许颗粒紧密接触。根据一个可能的实施方案,其在球式混合器或转鼓混合器或本领域技术人员已知的其它装置中进行。如有必要,可进行预先共研磨以调节起始原材料的粒度。
所述碳化硼、氧化钛和碳颗粒的中值尺寸分别在10μm和100μm之间、在5μm和80μm之间以及在0.1μm和1μm之间。优选地,所述碳化硼和氧化钛颗粒的中值尺寸大于7μm、大于8μm、大于9μm和/或小于70μm、小于50μm、小于30μm。
优选地,所述碳化硼和氧化钛颗粒的中值尺寸比在0.8和1.2之间。
优选地,根据本发明的混合物分别包含以质量百分比计62%至65%的氧化钛、21%至23%的碳化硼和13%至15%的碳(特别地为炭黑的形式)。
根据本发明的混合物具有相对于所述反应(2)的化学计量过量5%以下的B4C,根据本发明基于被引入到所述混合物中的TiO2的量进行计算。
任选地,碱金属盐、优选碱金属卤化物(特别地NaCl)以相对于前述包含碳化硼颗粒和氧化钛和碳源的混合物的质量按金属质量计0.5%-15%的比例被加入。
所述混合物优选是风干的,优选在高于40℃的温度下,更优选在高于100℃的温度下,以获得其水分含量小于2%、优选小于1%的混合物。
将所述混合物放置在惰性坩埚2(优选石墨)形式的外壳中,该惰性坩埚2是开放的,以使惰性气体4吹扫其中,将该组件放置在例如感应炉1中,如附图3所示。所述感应炉1配备有围绕石英管6放置的铜匝5,在所述石英管6内部放置有纤维状隔热体7和石墨基座8。惰性气体由分配器9引入。排出口10允许惰性气体流动并回收反应气体(主要是CO)。根据ASTMD7481-18标准测量的在热处理之前的混合物的松散密度优选大于0.5、大于0.6、大于0.7和/或优选小于2.0、小于1.8。优选地,混合体积占外壳总容积的30%以下,以改善惰性气体的循环和由所述反应(2)产生的气体的释放。在惰性气氛下,优选在惰性气体(特别地氩气)的吹扫下,进行升温最高至至少1500℃,优选至少1600℃,其中使所述气体与混合物接触。优选地,所述惰性气体吹扫以0.5-5L/min/m3外壳,优选为0.5-3L/min/m3,优选为0.5-2L/min/m3外壳的正常流速下进行。
优选地,所述温度上升为小于20℃/min,优选小于10℃/min。该温度上升斜坡,与平台期的持续时间一样,可以作为混合体积和所述反应器功率的函数进行调整。
最高热处理温度优选在1600℃和2000℃之间,优选在1600℃和1800℃之间。优选地,在最高温度下的平台期为至少1h,优选至少2h。
优选地,中间平台期在600℃和1000℃之间进行,和/或较低的斜坡(通常至少两倍低)在600℃之后进行,以防止混合物的去除并促进颗粒之间的反应。
冷却可以是自由的或强制的,优选根据小于20℃/min的负斜坡进行。
根据本发明的方法,所述材料产率大于80%,或甚至大于90%,或甚至大于95%,或甚至大于或等于98%。
所获得的粗制粉末具有通常在10μm和100μm之间的粒度。筛分或轻压碎或振动的操作使得可以消除聚集体并获得其中值直径在0.5μm和50μm之间、纯度高且非常均匀的细分粉末。在碾磨后,可以获得微米大小的粉末,其尺寸分散度由于窄的微晶尺寸而极度降低。
用前述方法所获得的粉末(在粉末的合成期间以如上规定的比例将碱金属盐加至其中)具有非常高的均匀性,这引起获得甚至更低的晶体尺寸分散度。
特别地具有高纯度和极度降低的粒度分散度的TiB2的最终粉末使得可以通过烧结而获得具有小于7体积%的总孔隙率的烧结陶瓷体,而不使用添加过渡金属如Ni、Fe或Co,同时表现出非常低的电阻率。
根据本发明的方法获得的粉末也使得可以获得呈部件形式的烧结陶瓷体,该部件的尺寸全部为至少一个大于5cm的尺寸,而在烧结时没有变形并且没有收缩开裂。
用于使用根据本发明粉末制备烧结陶瓷体的方法特别地包括以下步骤:
a)制备起始进料,该起始进料包含:
-根据本发明的TiB2粉末或包含所述粉末和一种或多种烧结粉末的如上所述的粉末的混合物,该一种或多种烧结粉末特别地选自二硼化铝、二硼化镁、二硼化锆、五硼化钨、六硼化钙、六硼化硅,所述TiB2粉末的纯度为大于95质量%,优选大于98质量%,所述TiB2粉末优选占所述进料的总质量的至少90%。
-水性溶剂,特别地去离子水,
i.在通过铸塑成形的情况下小于所述进料的总质量的20%,
ii.在通过挤出成形的情况下小于所述进料的总质量的15%,
iii.在压制成形的情况下小于所述进料总质量的10%,优选小于7%,
-优选地,成形添加剂,如粘合剂如PVA(聚乙烯醇)、增塑剂(如聚乙二醇)、润滑剂,
b)将所述进料成形为预成形件形式,优选通过压制、挤出或浇注进行,
c)在固化或干燥后从模具中移出;
d)任选地,干燥所述预成形件,优选直至残余水分含量在0重量%和0.5重量%之间,
e)将预成形件装入炉中并在惰性气氛下(优选在氩气下),或在真空下、优选在1600℃和2200℃之间的温度下、优选根据小于20℃/min、优选小于10℃/min的温度上升斜坡烧制所述预成形件。该温度上升斜坡,如同平台期的持续时间一样,可以作为混合体积和所述反应器功率的函数进行调节。
一旦采取了所有预防措施以避免预成形件受到污染,就可以根据待制备的部件尺寸来应用本领域技术人员已知的任何成形技术。因此,在石膏模具中的铸造可以通过在模具和预成形件之间使用石墨介质或油进行调整,从而避免由于混合导致模具的过度接触和磨损以及最终污染预成形件。这些由本领域技术人员使用的受控预防措施也可应用于该方法的其它步骤。因此,在烧结期间,所用的含有预成形件的模具或基体将优选地由石墨制成。
热压制、热等静压制或SPS(火花等离子体烧结)技术是特别合适的。
以下实施例仅用于说明目的,并且不在所描述的任何方面中限制本发明的范围。
实施例
实施例1(对比):
所述起始混合物用氧化钛粉末(其具有大于95%的质量百分比的TiO2和0.8μm的中值直径D50,主要为金红石结晶形式)、B4C粉末(其具有大于98%的质量百分比的B4C和等于7μm的中值直径D50)和石油焦,根据以下各自的质量比例制成:64.53%的TiO2、22.59%的B4C和12.89%的C。这种混合物对应于1.2%的碳化硼过量。根据由C.Subrmania等的公开物《the Journal International Journal of Refractory Metals and Hard Materials》25(2007)第345-350页的教导加入异丙醇溶剂以随后获得颗粒。
根据在1600℃和1820℃的温度下分别为2h的平台期持续时间,两个混合物样品在炉中在4.10-5mbar的真空下在没有进行特定的吹扫的情况下经受了热处理。
实施例2(根据本发明):
在如上相同的条件下制备混合物,但在热处理之后没有造粒步骤,所述碾磨进行3分钟而不是30分钟。此外,所述起始粉末由以下组分组成:具有大于95%的质量百分比的TiO2(剩余物基本上是SiO2<2%、Al2O3<2%、ZrO2<1%和微量Fe)和为10μm的中值直径D50的氧化钛粉末;具有大于98%的质量百分比的B4C和为15μm的中值直径D50的B4C粉末;以及为0.2μm的中值直径D50的炭黑粉末,根据以下各自的质量比例:63.6%的TiO2、22.1%的B4C和14.3%的C。这种混合物对应于相对于所述反应的化学计量的0.5%的碳化硼过量。根据图3,将两个混合物样品放置在作为外壳的如上所述的石墨坩埚中,分别经受在炉中在1.25L/min/m3的氩气吹扫流量下根据2h的平台期持续时间在1600℃和1800℃的热处理。
实施例3(对比):
将所述起始混合物如在实施例2中进行,但热处理是在没有任何特定吹扫下、并且在炉中在4.10-5mbar的真空下,根据在1600℃的温度下的2h的平台期持续时间进行的。
实施例4(根据本发明):
该实施例与实施例2的不同在于,在1600℃下的热处理之前,所述起始混合物包含进一步加入占所述干混合物的10重量%的NaCl。
实施例5(对比):
该实施例与实施例2的不同在于,在2000℃下的热处理之前,所述起始混合物包含具有更大尺寸的氧化钛粉末。
对于这些实施例中的每一个,然后将原料粉末混合物轻微压碎并筛分以分离聚集体,以获得颗粒粉末,但实施例4除外对于其单独筛分就足够。
实施例6(对比):
该实施例与根据本发明的实施例2的不同在于氩气吹扫被调节至0.25L/min/m3。
实施例7(对比):
该实施例与根据本发明的实施例2的不同在于B4C粉末的纯度>98质量%B4C和中值直径D50为大约150μm。
实施例8(对比):
该实施例与根据本发明的实施例2的不同在于氧化钛粉末、B4C粉末和炭黑各自的质量比例为如下:62.5%的TiO2、23.2%的B4C和14.3%的C。相对于所述反应的化学计量的B4C过量为约7.7%。
所述材料产率根据在本申请书中如上所述的程序进行。所述方法的特点汇编在以下表1中。
所获得的最终粉末的性能被显示在下面的表2中。
[表1]
N.M未测量;N.A不适用=大气压
[表2]
N.M.=未测量
从在表1和表2中报告的数据中可以看出,通过根据本发明的方法获得的TiB2粉末是非常纯的,并且几乎没有污染物(特别地氧、氮、碳、硫),进一步具有非常好的所述反应的产率。
陶瓷体由根据前述实施例2、4、6和8的粉末(在1600℃下获得的那些)进行制备,并且两种其它陶瓷体根据如下所述相同的方法进行制备,但第一种来自SE级的商用粉末,并且第二种来自NF级的Japan New Metals粉末。
将每种粉末与0.25%的压制添加剂(PVA)和4.75质量%的去离子水(相对于二硼化钛粉末的质量计)进行混合,以在100巴的压强下进行冷压,并且形成具有30mm直径和10mm厚度的圆柱状物。在脱模后,将每个圆柱状物在110℃下干燥24h,并且然后在无压强下,在氩气中在1850℃温度下烧制12h。
所获得的烧结体的孔隙率通过以堆积密度(例如根据ISO 18754测量)与根据ISO5018测量的绝对密度的百分比表示的比率来确定。电阻率在室温(20℃)下根据Van derPauw方法在具有20-30mm直径、2.5mm厚度的样品上的4个点处进行测量。
所获得的最终粉末的性质被显示在下面的表3中。
[表3]
N.M.=未测量
在阅读在前述表中报告的结果时,观察到根据本发明的烧结体具有非常低的电阻率和比用市售TiB2粉末获得的烧结体低得多的孔隙率。此外,所使用的TiB2颗粒具有的污染物(特别地元素氧、碳和氮)水平远低于通过如在现有技术中所描述的方法获得的污染物水平。这些优点能够由根据本发明的粉末在热处理后的简单研磨后获得,而无需采用额外的造粒步骤。
Claims (18)
1.一种用于制备TiB2粉末的方法,其包括在硼源存在下用碳还原氧化钛,所述方法包括加热由以下组成的原材料混合物:
a)氧化钛粉末,优选为粉末形式,其TiO2的质量百分比为至少95%,和
b)碳源,优选其碳质量百分比为至少90%的碳源,和
c)碳化硼粉末,其优选具有至少90%的B4C质量百分比,
-在高于1500℃且低于2000℃的温度下,
-其各自的比例使得根据以下平衡反应将氧化钛还原为硼化钛:
2TiO2+B4C+3C→2TiB2+4CO(2)
所述方法特征在于:
-所述碳化硼粉末的中值粒径是在5μm和100μm之间,和
-所述氧化钛粉末的中值粒径是在5μm和80μm之间,和
-相对于所述反应(2)必需的化学计量的量,过量碳化硼小于5质量%,
-所述合成在外壳中在惰性气流下进行,
-在所述外壳中气流的流速是0.5-10L/min/m3外壳。
2.根据权利要求1所述用于合成TiB2粉末的方法,其中所述碳化硼粉末的中值粒径大于7μm和/或小于80μm。
3.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述氧化钛粉末的中值粒径大于7μm和/或小于50μm。
4.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述碳化硼粉末的中值粒径与所述氧化钛粉末的中值粒径之比大于0.8和/或小于5。
5.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述氧化钛粉末具有小于5%的SiO2+Al2O3+ZrO2质量百分比。
6.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述碳源选自焦炭,特别地石油焦、煤或选自生物质、石墨或炭黑。
7.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述惰性气体吹扫流速为0.005-1L/min/m3外壳/kW外壳的加热功率。
8.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述惰性气体是稀有气体,优选地选自氩气或氦气。
9.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中将碱金属盐以相对于碳源和碳化硼颗粒和氧化钛粉末的质量的0.5-15质量%金属的比例添加到所述混合物中。
10.根据前述权利要求之一所述用于合成TiB2粉末的方法,其中所述混合物按质量比例计包含62%至65%的氧化钛(TiO2)、21%至23%的碳化硼(B4C)和13%至15%的碳(C),特别地为炭黑的形式。
11.根据前述权利要求之一所获得的TiB2粉末,其中值直径在0.5μm和50μm之间,并且其化学组成包含以下元素质量百分比:
-钛(Ti):大于67%,
-硼(B):大于28%,
-氧气(O):小于1.3%,
-碳(C):小于0.5%
-氮(N):小于0.5%
-硫(S):小于400ppm,
-铁(Fe):小于0.45%,
-Li+Na+Rb+Cs之和小于1%,
-其它元素的总和小于2%。
12.根据前述权利要求所述的TiB2粉末,其中氧(O)+氮(N)+碳(C)的总和小于1.5%。
13.根据前述权利要求11或12之一所述的TiB2粉末,其中所述中值直径在0.5μm和50μm之间,并且其化学组成包含以下元素质量百分比:
-钛(Ti):大于68%且小于72%,
-硼(B):大于29%且小于33%,
-碳(C):小于0.5%,
-氧(O):小于1%或硫(S):小于300ppm,
-氮(N):小于0.5%
-铁(Fe):小于0.4%,
-优选硅(Si)小于0.1%
-优选磷(P)小于0.3%
-优选碱土金属(Be+Mg+Ca+Sr+Ba)的总和小于0.25%。
14.根据权利要求11至13之一所述的TiB2粉末,其仅包含TiB2结晶相,如通过X射线衍射测量的。
15.一种混合物,其包含在90质量%和99.9质量%之间的根据权利要求11至14之一所述的TiB2粉末,和在0.1质量%和10质量%之间的一种或多种烧结粉末,该一种或多种烧结粉末选自二硼化铝、二硼化镁、二硼化锆、五硼化钨、六硼化钙、六硼化硅,优选地其纯度大于95质量%。
16.一种用于制备烧结陶瓷体的方法,该方法包括以下步骤:
a)制备起始进料,该进料包含:
-根据权利要求11至14所述的TiB2粉末或根据权利要求15所述的粉末混合物,
-水性溶剂,特别地去离子水,
-优选地,成形添加剂,
b)将所述起始进料成形为预成形件的形式;
c)在固化和干燥后从模具中移出;
d)任选地,干燥所述预成形件,优选地直至残余水分含量在0重量%和0.5重量%之间,
e)将预成形件装入炉中,并在惰性气氛下,优选在氩气下,或在真空下,优选在1600℃和2200℃之间的温度下烧制该预成形件。
17.通过根据前一项权利要求的方法获得烧结陶瓷体。
18.根据前一项权利要求所述的烧结陶瓷体作为膜的全部或部分、屏蔽或防弹保护元件、覆盖物或耐火块、阳极涂层或块或阴极涂层或块、热交换器、金属熔化坩埚、特别地用于有色金属的金属熔化坩埚、切削工具的用途。
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