CN118033187A - Elevating system and wafer level aging testing device - Google Patents
Elevating system and wafer level aging testing device Download PDFInfo
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- CN118033187A CN118033187A CN202410177999.0A CN202410177999A CN118033187A CN 118033187 A CN118033187 A CN 118033187A CN 202410177999 A CN202410177999 A CN 202410177999A CN 118033187 A CN118033187 A CN 118033187A
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- 238000012360 testing method Methods 0.000 title claims abstract description 82
- 230000032683 aging Effects 0.000 title claims abstract description 6
- 230000003028 elevating effect Effects 0.000 title description 2
- 238000007789 sealing Methods 0.000 claims abstract description 106
- 238000010438 heat treatment Methods 0.000 claims abstract description 90
- 239000000523 sample Substances 0.000 claims abstract description 76
- 230000007246 mechanism Effects 0.000 claims abstract description 56
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 238000009434 installation Methods 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- KTXUOWUHFLBZPW-UHFFFAOYSA-N 1-chloro-3-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C=C(Cl)C=CC=2)=C1 KTXUOWUHFLBZPW-UHFFFAOYSA-N 0.000 description 22
- CJDNEKOMKXLSBN-UHFFFAOYSA-N 1-chloro-3-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC(Cl)=C1 CJDNEKOMKXLSBN-UHFFFAOYSA-N 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000284 extract Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0425—Test clips, e.g. for IC's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2865—Holding devices, e.g. chucks; Handlers or transport devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Environmental & Geological Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a lifting mechanism and a wafer-level aging testing device, and relates to the technical field of wafer testing. The lifting mechanism of the wafer-level burn-in testing device comprises an electric assembly, wherein the electric assembly comprises a first PCB (printed circuit board) which is connected with an external circuit and is positioned below a lower sealing cover, at least one first Pad position is arranged on the top of the first PCB, and each first Pad position is correspondingly arranged with one first connecting probe group so that the external circuit supplies power to a heating device through the first PCB when the first Pad position is contacted with the first connecting probe group, and therefore the wafer is heated and tested. According to the technical scheme, the first Pad position is arranged on the first PCB, the first connecting probe group is respectively in contact connection with the first Pad position and the heating device in the lower sealing cover, so that the electric assembly of the lifting mechanism can power up the heating device in the lower sealing cover, and the wafer is tested.
Description
Technical Field
The invention relates to the technical field of wafer testing, in particular to a lifting mechanism and a wafer-level aging testing device.
Background
In the wafer testing technical field, the high temperature resistance test of the wafer is a key step of the wafer burn-in test, and a heating device is generally required to be arranged to heat the wafer. In the prior art, a heating device is arranged at the bottom of a lower sealing cover so as to heat a wafer positioned in the lower sealing cover. However, since the heating device is disposed outside the test chamber, there is a problem in that the heating efficiency is low, resulting in low wafer test efficiency. To solve the above problems, a heating device may be provided inside the lower seal cover. Accordingly, there is a need to design a device for powering a heating device located within a lower seal cap.
Disclosure of Invention
It is an object of a first aspect of the present invention to provide a lifting mechanism for powering up a heating device located in a lower seal cap.
Another object of the first aspect of the invention is to improve the air tightness of the lifting mechanism.
An object of a second aspect of the present invention is to provide a wafer level burn-in apparatus having the above-mentioned lifting mechanism.
According to an object of a first aspect of the present invention, there is provided a lifting mechanism of a wafer level burn-in apparatus, the wafer level burn-in apparatus including a wafer level burn-in jig and a lifting mechanism, the wafer level burn-in jig including a cover plate assembly, a lower sealing assembly, a heat sink for carrying a wafer, and a heating device for heating the wafer, the lower sealing assembly including a lower sealing cover, the lower sealing cover being connected with the cover plate assembly to form a test cavity, the heat sink and the heating device being located in the test cavity, the lower sealing cover being perforated with at least one first connection probe set in contact with the heating device, the lifting mechanism including an electrical assembly including:
The first PCB is connected with an external circuit and is positioned below the lower sealing cover, at least one first Pad position is arranged at the top of the first PCB, each first Pad position is correspondingly arranged with one first connection probe set, and when the first connection probe sets are contacted, the external circuit supplies power for the heating device through the first PCB, so that the wafer is subjected to heating test.
Optionally, the lower sealing cover is further provided with at least one second connection probe set in contact with the heat sink in a penetrating manner;
And at least one second Pad bit is further arranged at the top of the first PCB, and each second Pad bit is correspondingly arranged with one second connection probe set, so that the external circuit is powered on the heat sink through the first PCB when the second Pad bit is contacted with the second connection probe set, and the wafer is powered on for testing.
Optionally, a first temperature sensor is arranged in the heat sink, and a third connection probe set contacted with the first temperature sensor is arranged in the lower sealing cover in a penetrating way;
And a third Pad position used for being in contact with the third connection probe set is further arranged at the top of the first PCB so as to acquire signals of the first temperature sensor.
Optionally, at least one second temperature sensor is arranged in the heating device, and at least one fourth connection probe set in contact with the second temperature sensor is also arranged in the lower sealing cover in a penetrating way;
And the top of the first PCB is also provided with at least one fourth Pad position, and each fourth Pad position is correspondingly arranged with one fourth connection probe set so as to acquire the signal of the second temperature sensor when the fourth connection probe set is contacted.
Optionally, the electrical assembly further comprises:
The support plate is arranged below the first PCB and is provided with an installation position;
The second PCB is arranged at the mounting position and connected with the supporting plate, and the second PCB is connected with the external circuit;
and two ends of the switching probe set are respectively connected with the first PCB and the second PCB.
Optionally, a plurality of first gas holes are arranged at the bottom of the lower sealing cover, a plurality of second gas holes are arranged on the first PCB board, each second gas hole corresponds to one first gas hole, and the electrical assembly further comprises:
The adapter plate is arranged between the first PCB and the second PCB, is provided with an installation space for installing the transfer probe group, and is provided with an air passage communicated with a plurality of second air holes, so that an external air passage is vacuumized into the lower sealing cover through the air passage, the second air holes and the first air holes, and the heat sink and the wafer are adsorbed.
Optionally, the top of first PCB board is equipped with the mounting groove, electrical component still includes:
and the sealing assembly is arranged in the mounting groove and is used for sealing when the first PCB is matched with the lower sealing cover so as to prevent air leakage from occurring when the external air passage is used for exhausting air from the first air hole to the second air hole.
Optionally, the lifting mechanism further comprises:
The lifting assembly is connected with the electrical assembly and used for driving the electrical assembly to move upwards to be matched with the lower sealing cover and driving the lower sealing cover to move upwards until the lower sealing cover is abutted with the cover plate assembly, so that the test cavity is sealed;
the electrical assembly is configured to power the heating device and the heat sink and to attract the heat sink and the wafer after sealing the test cavity.
Optionally, the lifting assembly includes:
a plurality of worm and wheel assemblies respectively connected with the electric assemblies;
And the motor is connected with the plurality of worm and wheel assemblies so as to drive the plurality of worm and wheel assemblies to drive the electric assembly to lift.
According to an object of the second aspect of the present invention, the present invention also provides a wafer level burn-in apparatus, comprising:
The wafer-level aging test fixture comprises a lower sealing cover and a heating device, wherein the lower sealing cover is provided with a test cavity, and the heating device is positioned in the test cavity;
the lifting mechanism comprises an electric component and a lifting component;
and the cover plate assembly is positioned above the lower sealing cover and is used for performing burn-in test on the wafer positioned in the test cavity.
The lifting mechanism of the wafer-level burn-in testing device comprises an electric assembly, wherein the electric assembly comprises a first PCB (printed circuit board) which is connected with an external circuit and is positioned below a lower sealing cover, at least one first Pad position is arranged on the top of the first PCB, and each first Pad position is correspondingly arranged with one first connecting probe group so that the external circuit supplies power to a heating device through the first PCB when the first Pad position is contacted with the first connecting probe group, and therefore the wafer is heated and tested. According to the technical scheme, the first Pad position is arranged on the first PCB, the first connecting probe group is respectively in contact connection with the first Pad position and the heating device in the lower sealing cover, so that the electric assembly of the lifting mechanism can power up the heating device in the lower sealing cover, and the wafer is tested.
Further, the top of the first PCB of the lower sealing cover is provided with the mounting groove, and the electric component further comprises a sealing component arranged in the mounting groove and used for sealing when the first PCB is matched with the lower sealing cover so as to prevent air leakage when the second air hole vacuumizes the first air hole, thereby improving the air tightness of the lifting mechanism.
The above, as well as additional objectives, advantages, and features of the present invention will become apparent to those skilled in the art from the following detailed description of a specific embodiment of the present invention when read in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter by way of example and not by way of limitation with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts or portions. It will be appreciated by those skilled in the art that the drawings are not necessarily drawn to scale. In the accompanying drawings:
FIG. 1 is a schematic block diagram of an elevator mechanism according to one embodiment of the invention;
FIG. 2 is a schematic sectional installation view of a first connection probe set of a lifting mechanism according to one embodiment of the invention;
FIG. 3 is a schematic partial enlarged view at A of FIG. 2;
FIG. 4 is a schematic sectional installation view of a second connection probe set and a third connection probe set of a lifting mechanism according to one embodiment of the present invention;
FIG. 5 is a schematic partial enlarged view at B shown in FIG. 4;
FIG. 6 is a schematic sectional mounting view of a fourth connection probe set of a lifting mechanism in accordance with one embodiment of the invention;
FIG. 7 is a schematic partial enlarged view at C shown in FIG. 6;
FIG. 8 is a schematic cross-sectional view of a lifting mechanism according to one embodiment of the invention;
FIG. 9 is a schematic partial block diagram of a lifting mechanism according to one embodiment of the invention;
FIG. 10 is a schematic cross-sectional view of a first air hole and a second air hole according to one embodiment of the invention;
Fig. 11 is a schematic cross-sectional view of a wafer level burn-in apparatus according to one embodiment of the invention.
Reference numerals illustrate:
100-lifting mechanism, 200-wafer level burn-in device, 300-wafer, 400-wafer level burn-in fixture, 10-electrical assembly, 20-lifting assembly, 30-external circuit, 40-external air path, 11-first PCB board, 12-support board, 13-second PCB board, 14-transfer probe set, 15-transfer board, 16-sealing assembly, 111-first Pad position, 112-second Pad position, 113-third Pad position, 114-fourth Pad position, 115-second air hole, 116-mounting groove, 151-mounting space, 152-air channel, 21-turbine worm assembly, 22-motor, 210-lower sealing cover assembly, 211-lower sealing cover, 212-first air hole, 213-test cavity, 220-heating device, 221-second temperature sensor, 222-probe, 223-third air hole, 224-ceramic sheet, 225-heating sheet, 226-second heat insulator, 227-conductive sheet, 228-first heat insulator, 230-cover plate assembly, 240-heat sink, 250-second connection set, 260-connection set, 270-third connection set, and fourth connection set.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature, i.e. one or more such features. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. When a feature "comprises or includes" a feature or some of its coverage, this indicates that other features are not excluded and may further include other features, unless expressly stated otherwise.
Unless specifically stated or limited otherwise, the terms "mounted," "connected," "secured," "coupled," and the like should be construed broadly, as they may be fixed, removable, or integral, for example; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. Those of ordinary skill in the art will understand the specific meaning of the terms described above in the present invention as the case may be.
Fig. 1 is a schematic structural view of a lifting mechanism according to an embodiment of the present invention, fig. 2 is a schematic installation sectional view of a first connection probe group of the lifting mechanism according to an embodiment of the present invention, fig. 3 is a schematic partial enlarged view at a shown in fig. 2, fig. 4 is a schematic installation sectional view of a second connection probe group and a third connection probe group of the lifting mechanism according to an embodiment of the present invention, fig. 5 is a schematic partial enlarged view at B shown in fig. 4, fig. 6 is a schematic installation sectional view of a fourth connection probe group of the lifting mechanism according to an embodiment of the present invention, and fig. 7 is a schematic partial enlarged view at C shown in fig. 6. As shown in fig. 1 to 7, in an embodiment, the present invention provides a lifting mechanism 100 of a wafer level burn-in apparatus 200. The wafer level burn-in apparatus includes a wafer level burn-in jig 400 and a lifting mechanism, the wafer level burn-in jig 400 includes a cover plate assembly 230, a lower sealing assembly 210, a heat sink 240 for carrying the wafer 300 and a heating device 220 for heating the wafer 300, the lower sealing assembly 210 includes a lower sealing cover 211, the lower sealing cover 211 is connected with the cover plate assembly 230 to form a test cavity 213, the heat sink 240 and the heating device 220 are located in the test cavity 213, the lower sealing cover 211 is penetrated with at least one first connection probe set 250 in contact with the heating device 220, the lifting mechanism 100 includes an electrical assembly 10, the electrical assembly 10 includes a first PCB board 11, the first PCB board 11 is connected with an external circuit 30 and is located below the lower sealing cover 211, the top of the first PCB board 11 is provided with at least one first Pad position 111, each first Pad position 111 is arranged corresponding to one first connection probe set 250 to enable the external circuit 30 to heat the heating device 220 through the first PCB board 11 when in contact with the first connection probe set 250, thereby performing a heat test on the wafer 300. By arranging the first Pad position 111 on the first PCB 11 and contacting and connecting the first connection probe set 250 with the first Pad position 111 and the heating device 220 in the lower sealing cover 211, the lifting mechanism 100 can power up the heating device 220 in the lower sealing cover 211, thereby testing the wafer 300. Here, the heating device 220, the heat sink 240 and the wafer 300 are all located in the test cavity 213 of the lower sealing cover 211, and the number of the first Pad sites 111 is two, and the number of the first connection probe groups 250 is also two, and the two first Pad sites 111 are symmetrically arranged about the center line of the first PCB board 11.
In this embodiment, the heating device 220 has probes 222, and two ends of the first connection probe set 250 are respectively in contact connection with the first Pad site 111 and the heating device 220, so that the external circuit 30 supplies power to the heating device 220 through the first PCB 11, so that the heating device 220 located in the testing cavity 213 can also be electrically heated, thereby performing a heating test on the wafer 300, avoiding the heating rate of the wafer 300 caused by the heating device 220 being disposed outside the testing cavity 213, and improving the testing efficiency of the wafer 300. Here, the temperature range of the heating test is 175-200 ℃, the wafer 300 to be tested is an 8-inch wafer 300, the lower sealing cover 211 further includes a sealing strip 410, which is positioned on top of the lower sealing cover 211, so as to improve the tightness of the test cavity 213 formed between the cover plate assembly 230 and the lower sealing cover 211.
In this embodiment, the heating device 220 includes a ceramic plate 224, a plurality of heating plates 225, a first heat insulating member 228, a conductive plate 227 and a second heat insulating member 226 sequentially arranged from top to bottom, the bottom of the heating plate 225 is provided with the conductive plate 227, and the conductive plate 227 is connected to the heating plate 225 through a plurality of probes 222, so that when the conductive plate 227 is electrified, the heating plate is powered and heated, the ceramic plate 224 is used for transferring the heat of the heating plate 225 to a heat sink 240 so as to heat the wafer 300, and the second heat insulating member 226 is arranged between the conductive plate 227 and the lower sealing cover 211 so as to isolate the heat of the heating plate 225 and avoid the first PCB 11 from being damaged due to the excessive temperature of the heating plate 225. Here, the probes 222 are connected in contact with the corresponding heating sheets 225 through the power-on interface of the first heat insulator 228, and the ceramic sheets 224 have insulation properties capable of preventing a short circuit between the heat sink 240 and the heating device 220.
As shown in fig. 4 and 5, in this embodiment, the lower sealing cover 211 is further perforated with at least one second connection probe group 260 contacting the heat sink 240, and the top of the first PCB board 11 is further provided with at least one second Pad bit 112, and each second Pad bit 112 is disposed corresponding to one second connection probe group 260, so that the external circuit 30 energizes the heat sink 240 through the first PCB board 11 when contacting the second connection probe group 260, thereby performing an electrical test on the wafer 300. Specifically, one end of the second connection probe set 260 is in contact with the second Pad bit 112 of the first PCB 11, and the other end is in direct contact with the heat sink 240, so that the external circuit 30 powers up the heat sink 240 through the first PCB 11, thereby performing a high voltage test on the wafer 300. Here, the pressure in the test chamber may reach 2000V, the number of second set of connection probes 260 is one, and the number of second Pad sites 112 is one.
As shown in fig. 4 and 5, in this embodiment, a first temperature sensor 241 is disposed in the heat sink 240, a third connection probe set 270 contacting the first temperature sensor 241 is further disposed on the lower sealing cover 211, and a third Pad bit 113 contacting the third connection probe set 270 is further disposed on the top of the first PCB 11 to acquire a signal of the first temperature sensor 241. Specifically, one end of the third connection probe set 270 is in contact connection with the third Pad bit 113, and the other end is in contact connection with the first temperature sensor 241 located inside the heat sink 240, so that when the external circuit 30 supplies power to the first PCB 11, the third connection probe set 270 contacts the first temperature sensor 241 to obtain the real-time temperature of the heat sink 240, thereby avoiding damage to the wafer 300 caused by the too high temperature of the heat sink 240 or preventing the too low temperature of the heat sink 240 from reaching the heating test temperature of the wafer 300, and further affecting the test effect of the wafer 300.
As shown in fig. 6 and 7, in this embodiment, at least one second temperature sensor 221 is disposed in the heating device 220, at least one fourth connection probe set 280 contacting with the second temperature sensor 221 is further disposed through the lower sealing cover 211, at least one fourth Pad bit 114 is further disposed on the top of the first PCB 11, and each fourth Pad bit 114 is disposed corresponding to one fourth connection probe set 280, so as to acquire a signal of the second temperature sensor 221 when contacting with the fourth connection probe set 280. Specifically, the second temperature sensor 221 is disposed in the heating device 220 to obtain a real-time temperature of the heating device 220, so as to avoid the temperature of the heating device 220 being too high or too low. That is, one end of the fourth connection probe set 280 is in contact connection with the fourth Pad bit 114, and the other end is in contact connection with the second temperature sensor 221, so that when the external circuit 30 supplies power to the first PCB 11, the fourth connection probe set 280 contacts the second temperature sensor 221 to obtain the real-time temperature of the heating device 220, thereby avoiding damage to the wafer 300 caused by too high temperature of the heating device 220 or preventing the temperature of the heating device 220 from being too low to reach the heating test temperature of the wafer 300, and further affecting the test effect of the wafer 300. Here, the number of the fourth connection probe groups 280 is two, the number of the fourth Pad bits 114 is two, and the two fourth Pad bits 114 are symmetrically arranged with respect to the center line of the first PCB 11.
In this embodiment, the two fourth Pad bits 114, the third Pad bit 113, and the second Pad bit 112 are distributed in a field shape, and the two first Pad bits 111 are located at both sides of the two fourth Pad bits 114. Specifically, each fourth Pad bit 114 is disposed at a position near one of the first Pad bits 111. That is, each corresponding second temperature sensor 221 is disposed near the contact position between the first connection probe set 250 and the heating device 220, so that the second temperature sensor 221 can detect the temperature of the heating device 220 in real time, and the too high or too low temperature of the heating device 220 is avoided from affecting the testing effect of the wafer 300.
Fig. 8 is a schematic cross-sectional view of a lifting mechanism according to an embodiment of the present invention, fig. 9 is a schematic partial block diagram of the lifting mechanism according to an embodiment of the present invention, fig. 10 is a schematic cross-sectional view of a first air hole and a second air hole according to an embodiment of the present invention, and fig. 11 is a schematic cross-sectional view of a wafer level burn-in test apparatus according to an embodiment of the present invention. As shown in fig. 8 to 11, in this embodiment, the electrical assembly 10 further includes a support plate 12, a second PCB 13, and a transfer probe set 14, the support plate 12 is disposed below the first PCB 11 and has a mounting location 117, the second PCB 13 is disposed at the mounting location 117 and is connected to the support plate 12, the second PCB 13 is connected to the external circuit 30, and both ends of the transfer probe set 14 are connected to the first PCB 11 and the second PCB 13, respectively. Specifically, the second PCB 13 is connected to the external circuit 30, two ends of the switching probe set 14 are respectively connected to the first PCB 11 and the second PCB 13, so that a power supply path of the external circuit 30 passes through the second PCB 13, the switching probe set 14, and a plurality of Pad positions of the first PCB 11 at a time, and finally is respectively in contact connection with a corresponding temperature sensor, a heat sink 240, or a heating device 220 through a plurality of connection probe sets, so as to realize a heating test on the wafer 300. Here, the second PCB 13 is connected by screws and screw holes.
In this embodiment, the bottom of the lower sealing cover 211 is provided with a plurality of first air holes 212, the first PCB 11 is provided with a plurality of second air holes 115, each second air hole 115 corresponds to one first air hole 212, the electrical assembly 10 further includes an adapter plate 15, the adapter plate 15 is disposed between the first PCB 11 and the second PCB 13, and has an installation space 151 for installing the adapter probe set 14, and the adapter plate 15 has an air channel 152 communicating with the plurality of second air holes 115, so that the external air channel 40 is vacuumized into the lower sealing cover 211 through the air channel 152, the second air holes 115 and the first air holes 212, thereby adsorbing the heat sink 240 and the wafer 300. Specifically, the second air hole 115 is respectively communicated with the air channel 152 and the first air hole 212, and the external air channel 40 is communicated with the second air hole 115, so that when the external air channel 40 is opened, the air in the lower sealing cover 211 can be pumped through the air channel 152, the second air hole 115 and the first air hole 212, so that the test cavity 213 is in a vacuum state, thereby adsorbing the wafer 300 on the heat sink 240 and the heat sink 240 on the lower sealing cover 211, and the wafer 300, the heat sink 240 and the lower sealing cover 211 are connected through vacuum adsorption. Here, the air duct 152 has a rectangular shape, and the plurality of second air holes 115 are uniformly spaced above the first PCB 11.
In this embodiment, the heating device 220 is provided with at least one third air hole 223 corresponding to the first air hole 212, so that when the heat sink 240 needs to be adsorbed, the external air path 40 sequentially extracts the air in the test cavity from the third air hole 223, the first air hole 212, the second air hole 115, and the air channel 152, thereby adsorbing the heat sink 240 on the lower sealing cover 211.
In this embodiment, the heat sink 240 is provided with at least one fourth air hole 242 corresponding to the third air hole 223, so that when the wafer 300 needs to be adsorbed, the external air path 40 sequentially extracts the air in the test cavity from the fourth air hole 242, the third air hole 223, the first air hole 212, the second air hole 115, and the air channel 152, thereby adsorbing the wafer 300 on the heat sink 240.
In this embodiment, the top of the first PCB 11 is provided with the mounting groove 116, the electrical assembly 10 further includes the sealing assembly 16, and the sealing assembly 16 is disposed in the mounting groove 116, for sealing when the first PCB 11 is matched with the lower sealing cover 211, so as to avoid air leakage when the external air path 40 is pumped from the first air hole 212 to the second air hole 115, thereby improving the air tightness of the lifting mechanism 100, and avoiding the occurrence of the condition that the wafer 300 is broken down due to the fact that the wafer 300 is not tightly adsorbed between the heat sink 240 due to the air entering the testing cavity 213, thereby improving the testing safety of the wafer 300.
In this embodiment, the wafer level burn-in apparatus 200 further includes a cover plate assembly 230 disposed above the lower sealing cover 211, the lift mechanism 100 further includes a lift assembly 20, the lift assembly 20 is connected to the electrical assembly 10 for driving the electrical assembly 10 to move upward to engage the lower sealing cover 211 and drive the lower sealing cover 211 to move upward until abutting the cover plate assembly 230 to seal the test cavity 213, and the electrical assembly 10 is configured to power the heating device 220 and the heat sink 240 and to adsorb the heat sink 240 and the wafer 300 after sealing the test cavity 213. Specifically, after the heat sink 240 carrying the wafer 300 is placed in the test cavity 213, the lifting assembly 20 is connected with the electrical assembly 10 to drive the electrical assembly 10 to move up to match with the lower sealing cover 211 and drive the lower sealing cover 211 to move up until abutting against the cover plate assembly 230, and then the test cavity 213 is pumped by the external air channel 40 to achieve a vacuum adsorption state, so that the wafer 300 and the heat sink 240 are adsorbed in the lower sealing cover 211, and when the lifting assembly 20 drives the lower sealing cover 211 to move up to abut against the cover plate assembly 230 due to the flat surface of the heat sink 240, the wafer 300 is flatly adsorbed on the heat sink 240, so that the situation that the wafer 300 is not tightly pressed and broken down due to overlarge cavity pressure required by the wafer 300 is avoided.
In this embodiment, the lifting assembly 20 includes a plurality of worm and gear assemblies 21 and a motor 22, the worm and gear assemblies 21 are respectively connected with the electrical assembly 10, and the motor 22 is connected with the worm and gear assemblies 21 to drive the worm and gear assemblies 21 to lift the electrical assembly 10. Specifically, the motor 22 is connected to the worm and worm wheel assembly 21, the worm and worm wheel assembly 21 is connected to the lifting shaft, the motor 22 drives the worm and worm wheel assembly 21 to rotate after being started, and the worm and worm wheel assembly 21 drives the lifting shaft to ascend or descend, so that the electric connection and vacuum adsorption of the lifting mechanism 100 and the lower sealing cover 211 are realized, and the situation that the wafer 300 is easy to be curled and damaged due to overlarge cavity combining pressure required by the wafer 300 test can be avoided while the heating efficiency of the heating device 220 is improved.
As shown in fig. 11, the present invention further provides a wafer level burn-in apparatus 200. The wafer level burn-in apparatus 200 includes a wafer level burn-in fixture 400 and a lifting mechanism 100, the wafer level burn-in fixture 400 includes a lower sealing cover 211 and a heating device 220, the lower sealing cover 211 has a test cavity 213, the heating device 220 is located in the test cavity 213, the lifting mechanism 100 includes an electrical component 10 and a lifting mechanism 20, and a cover plate component 230 is located above the lower sealing cover 211 for performing a wafer level burn-in test on a wafer 300 located in the test cavity 213. Specifically, the lifting mechanism 100 is configured to supply power to the heating device 220 located in the lower sealing cover 211, and simultaneously vacuumize the testing cavity 213, so that after the lower sealing cover 211 and the cover plate assembly 230 are combined, the lifting mechanism 100 can simultaneously supply power to the heating device 220 to meet the heating test temperature requirement of the wafer 300, and connect the wafer 300, the heat sink 240 and the lower sealing cover 211 in a vacuum adsorption manner when the testing cavity 213 is vacuum adsorbed, so as to avoid the occurrence of the situation that the wafer 300 is curled and damaged when the heating efficiency is too low or the pressure required by the wafer 300 to be combined is too high when the heating device 220 is arranged at the bottom of the lower sealing cover 211, thereby improving the testing efficiency and the testing effect of the wafer 300.
The lifting mechanism 100 of this embodiment includes an electrical component 10, where the electrical component 10 includes a first PCB board 11 connected to an external circuit 30 and located below a lower sealing cover assembly 210, at least one first Pad position 111 is disposed on top of the first PCB board 11, and each first Pad position 111 is disposed corresponding to one first connection probe set 250, so that the external circuit 30 supplies power to the heating device 220 through the first PCB board 11 when contacting the first connection probe set 250, thereby performing a heating test on the wafer 300. In the above technical solution, the first Pad position 111 is disposed on the first PCB 11, and the first connection probe set 250 is respectively in contact with the first Pad position 111 and the heating device 220 in the lower sealing cover assembly 210, so that the lifting mechanism 100 can power up the heating device 220 in the lower sealing cover assembly 210, thereby testing the wafer 300. In addition, the top of the first PCB 11 of the lower sealing cover assembly 210 of the present invention is provided with the mounting groove 116, and the electrical assembly 10 further includes the sealing assembly 16 disposed in the mounting groove 116, for sealing when the first PCB 11 is mated with the lower sealing cover assembly 210, so as to avoid air leakage of the testing cavity 213 in a vacuum state, thereby improving the air tightness of the lifting mechanism 100.
By now it should be appreciated by those skilled in the art that while a number of exemplary embodiments of the invention have been shown and described herein in detail, many other variations or modifications of the invention consistent with the principles of the invention may be directly ascertained or inferred from the present disclosure without departing from the spirit and scope of the invention. Accordingly, the scope of the present invention should be understood and deemed to cover all such other variations or modifications.
Claims (10)
1. The lifting mechanism of the wafer level burn-in testing device is characterized by comprising a wafer level burn-in testing clamp and a lifting mechanism, wherein the wafer level burn-in testing clamp comprises a cover plate assembly, a lower sealing assembly, a heat sink for bearing a wafer and a heating device for heating the wafer, the lower sealing assembly comprises a lower sealing cover, the lower sealing cover is connected with the cover plate assembly to form a testing cavity, the heat sink and the heating device are positioned in the testing cavity, and at least one first connecting probe group contacted with the heating device is penetrated in the lower sealing cover; the lifting mechanism includes an electrical component comprising:
The first PCB is connected with an external circuit and is positioned below the lower sealing cover, at least one first Pad position is arranged at the top of the first PCB, each first Pad position is correspondingly arranged with one first connection probe set, and when the first connection probe sets are contacted, the external circuit supplies power for the heating device through the first PCB, so that the wafer is subjected to heating test.
2. The lift mechanism of claim 1, wherein the lower seal cap is further pierced with at least one second set of connection probes in contact with the heat sink;
And at least one second Pad bit is further arranged at the top of the first PCB, and each second Pad bit is correspondingly arranged with one second connection probe set, so that the external circuit is powered on the heat sink through the first PCB when the second Pad bit is contacted with the second connection probe set, and the wafer is powered on for testing.
3. The lifting mechanism according to claim 2, wherein a first temperature sensor is arranged in the heat sink, and a third connection probe set in contact with the first temperature sensor is further arranged in the lower sealing cover in a penetrating manner;
And a third Pad position used for being in contact with the third connection probe set is further arranged at the top of the first PCB so as to acquire signals of the first temperature sensor.
4. A lifting mechanism according to claim 3, wherein at least one second temperature sensor is arranged in the heating device, and at least one fourth connection probe set in contact with the second temperature sensor is also arranged in the lower sealing cover in a penetrating manner;
And the top of the first PCB is also provided with at least one fourth Pad position, and each fourth Pad position is correspondingly arranged with one fourth connection probe set so as to acquire the signal of the second temperature sensor when the fourth connection probe set is contacted.
5. The lift mechanism of claim 4, wherein the electrical assembly further comprises:
The support plate is arranged below the first PCB and is provided with an installation position;
The second PCB is arranged at the mounting position and connected with the supporting plate, and the second PCB is connected with the external circuit;
and two ends of the switching probe set are respectively connected with the first PCB and the second PCB.
6. The lifting mechanism of claim 5, wherein a plurality of first air holes are formed in the bottom of the lower sealing cover, a plurality of second air holes are formed in the first PCB, each of the second air holes corresponds to one of the first air holes, and the electrical assembly further comprises:
The adapter plate is arranged between the first PCB and the second PCB, is provided with an installation space for installing the transfer probe group, and is provided with an air passage communicated with a plurality of second air holes, so that an external air passage is vacuumized into the lower sealing cover through the air passage, the second air holes and the first air holes, and the heat sink and the wafer are adsorbed.
7. The lifting mechanism of claim 6, wherein a top of the first PCB board is provided with a mounting slot, the electrical assembly further comprising:
and the sealing assembly is arranged in the mounting groove and is used for sealing when the first PCB is matched with the lower sealing cover so as to prevent air leakage from occurring when the external air passage is used for exhausting air from the first air hole to the second air hole.
8. The lift mechanism of any one of claims 1-7, wherein the lift mechanism further comprises:
The lifting assembly is connected with the electrical assembly and used for driving the electrical assembly to move upwards to be matched with the lower sealing cover and driving the lower sealing cover to move upwards until the lower sealing cover is abutted with the cover plate assembly, so that the test cavity is sealed;
the electrical assembly is configured to power the heating device and the heat sink and to attract the heat sink and the wafer after sealing the test cavity.
9. The lift mechanism of claim 8, wherein the lift assembly comprises:
a plurality of worm and wheel assemblies respectively connected with the electric assemblies;
And the motor is connected with the plurality of worm and wheel assemblies so as to drive the plurality of worm and wheel assemblies to drive the electric assembly to lift.
10. A wafer level burn-in apparatus comprising:
The wafer-level aging test fixture comprises a lower sealing cover and a heating device, wherein the lower sealing cover is provided with a test cavity, and the heating device is positioned in the test cavity;
the lift mechanism of any one of claims 1-9, comprising an electrical component and a lift component;
and the cover plate assembly is positioned above the lower sealing cover and is used for performing burn-in test on the wafer positioned in the test cavity.
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| CN202410177999.0A CN118033187A (en) | 2024-02-08 | 2024-02-08 | Elevating system and wafer level aging testing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410177999.0A CN118033187A (en) | 2024-02-08 | 2024-02-08 | Elevating system and wafer level aging testing device |
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