CN1180301C - Clamper - Google Patents

Clamper Download PDF

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Publication number
CN1180301C
CN1180301C CNB01101394XA CN01101394A CN1180301C CN 1180301 C CN1180301 C CN 1180301C CN B01101394X A CNB01101394X A CN B01101394XA CN 01101394 A CN01101394 A CN 01101394A CN 1180301 C CN1180301 C CN 1180301C
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CN
China
Prior art keywords
substrate
graphite
heat
anchor clamps
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB01101394XA
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Chinese (zh)
Other versions
CN1304057A (en
Inventor
野崎秀彦
博
三浦章博
吾
尾藤信吾
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Toyo Tanso Co Ltd
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Toyo Tanso Co Ltd
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Publication date
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Application filed by Toyo Tanso Co Ltd filed Critical Toyo Tanso Co Ltd
Publication of CN1304057A publication Critical patent/CN1304057A/en
Application granted granted Critical
Publication of CN1180301C publication Critical patent/CN1180301C/en
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/8085—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/80855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/80862—Heat curing

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A jig for heat treatment of a liquid crystal substrate in the manufacturing process of the liquid crystal display board, in which a sintering process is proceeded after putting a liquid crystal display element into a liquid crystal cell formed by a substrate and sealing material. The sealing process is within +- 2 DEG C of a temperature distribution within the plane of 600x600 mm at about 200 DEG C, and the adhesion property to the liquid substrate is enhanced. A graphite base material is subjected to a thermosetting resin coating or impregnation or impregnation coating treatment, and the treatment is stopped in a state where the thermosetting resin is cured, by which the surface soaking property at about 200 DEG C is improved, the gas permeability is enhanced and the adhesion property to the work is enhanced.

Description

Anchor clamps
The present invention relates in the manufacturing process of LCD panel etc. heating crystal liquid substrate, the anchor clamps that use during with the base plate seals liquid crystal display cells.
Employed anchor clamps when crystal liquid substrate is heat-treated are to its thermal uniformity, suppress dust and vacuum is inhaled, adaptation when putting has requirement.
As the graphite anchor clamps that this thermal uniformity and dust have carried out control, for example have the spy to open to disclose in the flat 5-262510 communique, infiltration and coated the anchor clamps of vitreous carbon at graphite surface in graphite.It is good that this communique has disclosed at 800 ℃ of following thermal uniformities, and the dust generating capacity few, be applicable in the manufacturing process of solar cell, LCD panel etc. the anchor clamps that use when on substrate surface, forming thin-film semiconductor component by methods such as CVD.
; in the manufacture process of LCD panel; in the secret room that forms by substrate and encapsulant that liquid crystal display cells is packed into; and in the operation of burning till and sealing; its temperature is about 200 ℃, at this moment the condition of Yao Qiuing be the Temperature Distribution of chucking surface in the face of 600 * 600mm in ± 2 ℃.
But, though above-mentioned spy opens the infiltration in graphite that discloses in the flat 5-262510 communique and the anchor clamps that coated vitreous carbon at graphite surface has good thermal uniformity under 800 ℃ temperature, exists the problem that can not satisfy the said temperature distribution occasion about 200 ℃.
In addition, also exist following problems, promptly LCD panel is when enclosing liquid crystal display cells in the substrate, and the adaptation between the anchor clamps that substrate and crystal liquid substrate heat treated are used has determined the flatness of product.; in graphite, flood, coated under the situation of vitreous carbon; the pore that exists in the graphite can not be sealed fully; therefore; by vacuum mode substrate is being inhaled under the situation on the anchor clamps; just can be difficult to guarantee sufficient adaptation from the pore gas leakage of the anchor clamps and the discontiguous side of substrate.
Therefore, the present invention succeeds in developing in view of the above problems, the anchor clamps that provide a kind of crystal liquid substrate heat treated to use are provided purpose, these anchor clamps are in the manufacture process of LCD panel, crystal liquid substrate carried out heat treated, using in the secret room that constitutes by substrate and encapsulant that liquid crystal display cells is packed into and in the operation of burning till and sealing, Temperature Distribution under the temperature about 200 ℃, in 600 * 600mm face is in ± 2 ℃, and is good with the adaptation of crystal liquid substrate.
In order to solve above-mentioned problem, present inventors have carried out research with keen determination repeatedly, found on graphite substrate material, to coat or the infiltration heat reactive resin, or infiltrate, coat processing, under the state that this heat-curing resin has solidified, stop to handle, can improve the thermal uniformity on surface when 200 ℃ of left and right sides like this, reduce gas penetration potential, can improve and item for disposal between adaptation, finished the present invention.
That is, anchor clamps of the present invention are to make with the graphite that heat-curing resin coats, infiltrates or infiltration coats, and use the anchor clamps that above-mentioned heat-curing resin is solidified to form when crystal liquid substrate is carried out heat treated.Above-mentioned curing is handled preferably being lower than under 400 ℃ the temperature and is carried out.And the nitrogen permeability under the room temperature is preferably less than 1.0 * 10 -8m 2/ s.
The highly purified isotropic graphite that graphite substrate material used in the present invention is preferably made of general manufacture method.It would be desirable that volume density is 1.7～1.9g/cm 3, the open pore rate is 5～20%.The open pore rate can not obtain the effect of sufficient infiltration, coating heat-curing resin less than 5% o'clock.The open pore rate surpasses at 20% o'clock, and the heat-curing resin amount of infiltration increases, and thermal conductivity reduces, and this situation had better not appear in the thermal uniformity variation on surface.
The heat-curing resin that coating or infiltration or infiltration coat on this graphite material can list phenolics, epoxy resin, polyimide resin, polycarbodiimide resin etc.Here the so-called part that means heat-curing resin that coats is infiltrated in graphite substrate material, all the other major parts are coating the state on graphite substrate material surface, the degree of depth of infiltration in graphite substrate material is 0.1mm～1mm, and skin depth is the situation of 1 μ m～20 μ m.So-called infiltration means that heat-curing resin infiltrates in graphite substrate material inside dearly, coating the state on graphite substrate material surface thinly, and the degree of depth that is infiltrated up in the graphite substrate material is 0.1mm～50mm, and skin depth is less than the situation of 1 μ m.So-called infiltration coats and means that heat-curing resin infiltrates in matrix material inside dearly and coating the state on graphite substrate material surface thickly, the degree of depth that is infiltrated up in the graphite substrate material is 0.1mm～50mm, and skin depth is the following situations of 20 μ m.Here, when being coated on lip-deep thickness above 20 μ m, thermal characteristics strengthens than the characteristic of the heat-curing resin of graphite difference, and the thermal uniformity on surface reduces, and does not wish to occur this situation.
Method to coating or infiltration or infiltration coating heat-curing resin is not particularly limited, for example can enumerate following method, promptly the anchor clamps that the above-mentioned graphite material that is processed into any size and shape is made ooze stain in heat-curing resin, perhaps carry out pressure impregnation, or be coated in method on the arbitrary face etc. with hairbrush, spraying etc. with heat-curing resin.These methods are combined aptly, just can adjust its infiltration degree of depth between the thickness 20 μ m to coating, coat thickness at infiltration degree of depth 50mm.
With heat-curing resin coat or infiltrate or infiltrate coat to handle after, below 400 ℃, be preferably under 200 ℃～300 ℃ the temperature heat-curing resin solidified.This is because if make the heat-curing resin carbonization, then shrinks because of heat-curing resin or produces gasification etc. at carbonation stage, just can not be fully with the cause of the pore obstruction of graphite substrate material.Therefore, terminate in solid state, just can reduce the transit dose of gas, can make air penetrability less than 1.0 * 10 -8m 2/ s.Like this, when using as anchor clamps, when holding handled thing with vacuum mode and be crystal liquid substrate and since with contacted of crystal liquid substrate beyond can not leak gas from pore, the adaptation between anchor clamps and the crystal liquid substrate improves.Here, if air penetrability greater than 1.0 * 10 -8m 2/ s is then owing to the adaptation between anchor clamps and the liquid crystal matrix material reduces, so air penetrability is less than 1.0 * 10 -8m 2/ s is preferably less than 1.0 * 10 -9m 2/ s.
Because heat-curing resin has heat insulating ability, so stop cure stage under the situation of carbonization, just can utilize this heat insulating ability, improve the thermal uniformity on surface.
The present invention constitutes as described above, on graphite substrate material, coat, infiltrate or infiltration coating heat-curing resin, under the temperature below 400 ℃, be cured, and under solid state, stop the processing of heat-curing resin, the anchor clamps that use when like this, just crystal liquid substrate being carried out heat treated applicable to conduct.The fraction defective when enclosing liquid crystal display cells between the crystal liquid substrate can be significantly reduced, and, therefore, also the effect that reduces the liquid crystal production cost significantly can be obtained owing to the anchor clamps life-span of at this moment using is long.
Fig. 1 is the synoptic diagram of small air penetrability determinator.
Below, more specifically the present invention will be described with embodiment.
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, dipping is 1 hour in polycarbodiimide resin liquid [spinning (strain) system day clearly], polycarbodiimide resin liquid is infiltrated up in the graphite material, under 250 ℃ temperature, is cured processing then, as supplying the examination body.This in atmosphere, under 200 ℃ temperature, measures central part, end and surperficial Temperature Distribution with contact thermocouple for the examination surface, by holding crystal liquid substrate for the examination body with vacuum mode, obtains adaptation at this moment.In addition, the test portion that downcuts φ 30 * 10mm is measured air penetrability for measuring air penetrability usefulness.Equally, downcut the test portion of 50 * 50 * 10mm, measure the following particulate quantity of 5 μ m with particulate determination method in the liquid, as the dust generating capacity.
Embodiment 2
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, dipping is 1 hour in polycarbodiimide resin liquid [spinning (strain) system day clearly], make polycarbodiimide infiltration in graphite material after, with the spray method coating from the teeth outwards, under 250 ℃ temperature, be cured processing then, as supplying the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Embodiment 3
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, in liquid phenolic resin [リ グ Na イ ト (strain) system] dipping 1 hour, liquid phenolic resin is infiltrated up in the graphite material, under 250 ℃ temperature, be cured processing then, as for the examination body.Thereafter, the same with embodiment 1, obtain surface temperature distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Embodiment 4
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, dipping is 1 hour in liquid phenolic resin [リ グ Na イ ト (strain) system], make after liquid phenolic resin is infiltrated up in the graphite material, with the spray method coating from the teeth outwards, under 250 ℃ of temperature, be cured processing then, as supplying the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Embodiment 5
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, dipping is 1 hour in polycarbodiimide resin liquid [spinning (strain) system day clearly], polycarbodiimide resin liquid is infiltrated up in the graphite material, under 400 ℃ of temperature, is cured processing then, as supplying the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Embodiment 6
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, in liquid phenolic resin [リ グ Na イ ト (strain) system] dipping 1 hour, liquid phenolic resin is infiltrated up in the graphite material, under 350 ℃ of temperature, be cured processing then, as for the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Comparative example 1
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, dipping is 1 hour in liquid phenolic resin [リ グ Na イ ト (strain) system], liquid phenolic resin is infiltrated up in the graphite material, under 250 ℃ of temperature, be cured processing then, then under 800 ℃ of temperature, burn till processing, as supplying the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Comparative example 2
With volume density is 1.8g/cm 3Isotropic graphite materials processing become 600 * 600 * 35mm, as for the examination body.Thereafter, the same with embodiment 1, obtain the surface Temperature Distribution, with adaptation, air penetrability and the dust generating capacity of crystal liquid substrate.
Air penetrability is obtained with small air penetrability determinator shown in Figure 1.At first, test portion 3 is arranged in the test portion retainer, after with drum pump 10A the air in the A1 of chamber being discharged, refills nitrogen.With drum pump 10B with chamber B 2In be decompressed to equilibrium state.Stop drum pump 10A revolution, the gas in the A1 of chamber is seen through, from test portion 3 so chamber B 2Interior pressure begins to rise.With pressure gauge 5 measuring cell B 2Interior pressure.With the pressure P in the A1 of chamber A(Pa) compare, at chamber B 2Interior pressure P B(Pa) very little time at initial stage t (s) obtains chamber B 2Pressure P B(Pa) ascending velocity (Δ P B/ Δ t).Suppose chamber B 2Internal volume be V B(cm 3), throughput Q=V then B(Δ P B/ Δ t).At chamber B 2Interior pressure rises and changes in the scope that linearly changes, and throughput Q can obtain with following formula.
Q＝(P B2-P B1)V B/(t 2-t 1)
In the formula, P B1Be at time t 1The time chamber B 2Pressure (Pa), P B2Be at time t 2The time chamber B 2Pressure (Pa), V BBe the volume (cm of chamber B 3).The Q substitution following formula of obtaining is obtained air penetrability K.
K＝QL/ΔPA
In the formula, K is air penetrability (cm 2/ s), Q is Air permenbility (P aCm 3/ s) Δ P is the pressure differential (P of test portion both sides a), L is test portion thickness (cm), A is gas permeation area (cm 2).
Specifically, as following, measure.With anchor clamps test portion 3 is contained on the device with liner (O-ring seal) 4.Then, after the discharge of the air in the A1 of chamber,, form authorised pressure P importing in the A1 of chamber as the nitrogen of measuring gas or helium A(P a).At this moment, confirm chamber B 2In reach equalized pressure P B(P a).Even reach equilibrium state, approximately also to proceed 5～24 hours the degassing.This is because the degassing of chamber interior and test portion is carried out in inflation, to reduce when measuring to formulate because of chamber interior or the test portion degassing cause of generation error.Close the vacuum valve between drum pump 10B and the chamber B, begin to measure.The gas that sees through through test portion 3 from chamber A1 makes chamber B 2Interior pressure P B(P a) begin to rise, with pressure gauge 5 it is measured, and be recorded on the register as the function of time t.The volume V of chamber B BBe 13cm 3When measuring the high material of air penetrability, chamber B 2The pressure rising delay, the reliability of need to improve measuring is so use volume to be 1000cm 3Preparation jar 6.Condition determination is as follows.
Comparative example test portion: stainless steel (V B=1013cm 3)
Test portion size: φ 30 * 1mm
Using gases: nitrogen (Δ P=300KPa)
Table 1 is listed in each characteristic value measurement result conclusion for the examination body of above embodiment 1～6 and comparative example 1 and 2.
Table 1
Air penetrability (m 2/s) Adaptation Temperature Distribution (℃) Thermal uniformity Dust generating capacity (10 4Individual/100ml)
Embodiment 1 5.0×10 -10 Very ±1 ⊙ 3.5
Embodiment 2 1.0×10 -10 Very ±1 ⊙ 1.5
Embodiment 3 3.5×10 -10 Very ±1 ⊙ 3.0
Embodiment 4 1.5×10 -10 Very ±1 ⊙ 1.0
Embodiment 5 2.0×10 -9 Very ±2 ○ 4.5
Embodiment 6 1.0×10 -9 Very ±2 ○ 6.0
Comparative example 1 0.4×10 -5 Bad ±7 × 7.5
Comparative example 2 1.0×10 -5 Bad ±7 × 223.7
According to table 1, infiltration or infiltration coat after the heat reactive resin, under less than 400 ℃ of temperature through solidify embodiment 1～6 after handling for the examination body, its air penetrability is also less than 1 * 10 -8m 2/ s, also fine with the adaptation of crystal liquid substrate, also in ± 2 ℃, the thermal uniformity on surface is good for the Temperature Distribution under 200 ℃ of temperature, and the dust generating capacity is also few, and the anchor clamps of using as the crystal liquid substrate heat treated can meet the demands fully.In addition, the comparative example 1 after the carbonization for the examination body, its air penetrability, adaptation, thermal uniformity, dust generation etc. all indexs all than the index error for the examination body of the present embodiment that under the state that has solidified, stops.

Claims (3)

1. anchor clamps are made with the graphite that heat-curing resin coats, infiltrates or infiltration coats, and use when crystal liquid substrate is carried out heat treated, and above-mentioned heat-curing resin is solidified to form.
2. it is to handle under the temperature below 400 ℃ that anchor clamps according to claim 1, above-mentioned curing are handled.
3. anchor clamps according to claim 1, the nitrogen transmitance under the room temperature is less than 1.0 * 10 -8m 2/ s.
CNB01101394XA 2000-01-11 2001-01-11 Clamper Expired - Fee Related CN1180301C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000006045A JP3318301B2 (en) 2000-01-11 2000-01-11 jig
JP6045/2000 2000-01-11

Publications (2)

Publication Number Publication Date
CN1304057A CN1304057A (en) 2001-07-18
CN1180301C true CN1180301C (en) 2004-12-15

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CNB01101394XA Expired - Fee Related CN1180301C (en) 2000-01-11 2001-01-11 Clamper

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JP (1) JP3318301B2 (en)
KR (1) KR20010070357A (en)
CN (1) CN1180301C (en)
TW (1) TW492131B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104708555A (en) * 2015-02-14 2015-06-17 合肥誉联信息科技有限公司 Clamp for glass capillary
US11567048B2 (en) 2017-11-17 2023-01-31 Lg Energy Solution, Ltd. Jig for pressing gas analysis monocell, and gas analysis device including same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050335B2 (en) * 1980-07-24 1985-11-08 日本電気ホームエレクトロニクス株式会社 heat treatment jig
JPH05262510A (en) * 1992-03-16 1993-10-12 Denki Kagaku Kogyo Kk Jig
JPH0851079A (en) * 1994-08-05 1996-02-20 Sumitomo Metal Ind Ltd Thermal processing jig
JPH08191116A (en) * 1995-01-11 1996-07-23 Hitachi Chem Co Ltd Jig for electronic component and manufacturing method thereof
JPH10287470A (en) * 1997-04-07 1998-10-27 Akechi Ceramics Kk Firing jig containing carbon fiber
JP4101325B2 (en) * 1997-06-10 2008-06-18 東洋炭素株式会社 Jig materials for glass container manufacturing

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KR20010070357A (en) 2001-07-25
JP3318301B2 (en) 2002-08-26
JP2001194673A (en) 2001-07-19
CN1304057A (en) 2001-07-18
TW492131B (en) 2002-06-21

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