CN118011736A - Device and method for improving photoresist-coated cyclone patterns of photomask substrate - Google Patents
Device and method for improving photoresist-coated cyclone patterns of photomask substrate Download PDFInfo
- Publication number
- CN118011736A CN118011736A CN202410161502.6A CN202410161502A CN118011736A CN 118011736 A CN118011736 A CN 118011736A CN 202410161502 A CN202410161502 A CN 202410161502A CN 118011736 A CN118011736 A CN 118011736A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- cyclone
- substrate
- upper cover
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 117
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 47
- 238000000576 coating method Methods 0.000 claims abstract description 47
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 16
- 238000009423 ventilation Methods 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 21
- 230000006872 improvement Effects 0.000 claims description 13
- 230000008569 process Effects 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000010073 coating (rubber) Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a device and a method for improving photoresist coating whirlwind patterns of a photomask substrate, which relate to the technical field of manufacturing of photomask substrates. The top of the gluing cavity is provided with an opening, a chip bearing table is arranged in the gluing cavity and used for placing square substrates, the side wall of the gluing cavity is provided with a plurality of air outlets, and the air outlets are externally connected with ventilation equipment. The upper cover is used for opening and closing the opening, and the middle part of the upper cover is provided with an air inlet hole which penetrates through the upper cover. When the photoresist coating device is used, the ventilation equipment communicated with the air outlet in the photoresist coating cavity is opened, local negative pressure is formed in the photoresist coating cavity, external air enters the photoresist coating cavity from the upper cover air inlet hole to form air flow from the air inlet hole to the air outlet, the air flow flows from the central area of the square substrate to the periphery, photoresist is accelerated to flow to four corners, the stacking of the photoresist at the four corners is reduced, the annular flow field is improved, cyclone-shaped lines are reduced, and the uniformity of the thickness of the photoresist and the process stability are improved.
Description
Technical Field
The invention relates to the technical field of manufacturing of photomask substrates, in particular to a device and a method for improving gluing cyclone patterns of a photomask substrate.
Background
In the photomask substrate manufacturing process, after a layer of chromium film is plated on a square quartz or soda glass substrate, a layer of photoresist is required to be coated on the surface of the chromium film so as to facilitate the subsequent patterning process. Photoresist non-uniformity can lead to variations in lithographic feature size, resulting in reduced device yields, quality, and performance. Spin coating, also known as spin coating or centrifugation, refers to the process of forming an initial film of a quantity of photoresist solution on a substrate, then accelerating the rotation of the substrate to a predetermined speed, flowing the photoresist solution radially outward under the action of centrifugal force, and continuously reducing the thickness of the liquid film, thereby forming a uniform film on the surface of the substrate.
The spin coating method has the advantages that the coating effect of the square substrate is poor, the uniformity is poor, the substrate utilization rate is low, cyclone-shaped color-changing wind patterns are generated due to the difference of centrifugal forces at four corners of the square substrate, the cyclone-shaped color-changing wind patterns are formed because when the square substrate rotates at a high speed, a rotating flow field opposite to the rotating direction of the substrate can be formed by taking the substrate as a reference system, photoresist at four corners of the square substrate is easily accumulated in the spin coating process, meanwhile, the linear speed at the four corners of the substrate is higher than that of the central area of the substrate, the airflow velocity is higher than that of the central area, and the solvent on the surface of the photoresist accumulated at the four corners is quickly volatilized and dried, so that the cyclone-shaped patterns are formed.
The current improvement scheme of the square substrate gluing cyclone pattern adopts a closed cavity, and the annular flow field is formed in the cavity by increasing the humidity in the cavity so as to accelerate the flowing effect of photoresist at four corners of the square substrate, thereby achieving the effect of improving the square substrate edge cyclone pattern, but when thin photoresist with the thickness of 0.1-1 mu m is coated, the glue coating rotating speed is higher (more than 2000 rpm), the inner annular flow field can be driven by the high-speed rotation of a spin-coating disc in the closed cavity, and the generation and the elimination of the annular flow field generate vortex in the glue film forming process, so that the influence of the inner flow field is obvious, the inner flow field is disordered, the local color is easy to generate, the surface of the glue film can form divergent color-changing patterns, and the uniformity of the glue thickness is poor.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a device for improving the photoresist-coated cyclone patterns of a photomask substrate, which can improve the edge wind pattern condition of a square substrate and improve the uniformity of the photoresist thickness and the process stability.
The invention also provides a scheme for improving the photoresist coating cyclone pattern of the photomask substrate, and the device for improving the photoresist coating cyclone pattern of the photomask substrate is applied.
According to the embodiment of the invention, the device for improving the photoresist-coated cyclone pattern of the photomask substrate comprises a photoresist-coated cavity and an upper cover. The top of rubber coating cavity is equipped with the opening, be provided with in the rubber coating cavity and hold the piece platform, hold the piece platform and be used for placing square substrate, the lateral wall of rubber coating cavity is equipped with a plurality of air exit, the external ventilation equipment of air exit. The upper cover is used for opening and closing the opening, an air inlet hole is formed in the middle of the upper cover, and the air inlet hole penetrates through the upper cover.
According to the embodiment of the invention, the device for improving the photoresist-coated cyclone pattern of the photomask substrate has at least the following beneficial effects:
the invention of the embodiment adopts the semi-closed cavity, on one hand, the semi-closed cavity avoids the influence of external wind flow, increases the humidity in the cavity, and ensures that the photoresist has stronger flow outside the inscribed circle of the square substrate; on the other hand, the internal air flow also rotates along with the closed cavity to form an annular flow field, so that the flowing effect of photoresist on the edge of the square substrate is further accelerated, and the effect of improving the wind lines on the edge of the square substrate is achieved. When the photoresist coating device is used, the ventilation equipment communicated with the air outlet in the photoresist coating cavity is opened, local negative pressure is formed in the photoresist coating cavity, external air enters the photoresist coating cavity from the air inlet hole of the upper cover, air flow from the air inlet hole to the air outlet is formed, the air flow flows from the central area of the square substrate to the periphery, photoresist is accelerated to flow to four corners, the stacking of the photoresist at the four corners is reduced, the annular flow field is improved, cyclone-shaped lines are reduced, and the uniformity of the photoresist thickness and the process stability are improved.
According to some embodiments of the invention, the air outlet is arranged around the wafer carrying platform as a center, and the distances between two adjacent air outlets are equal.
According to some embodiments of the invention, the pore size of the air inlet is smaller than the diameter of the inscribed circle of the square substrate.
According to some embodiments of the invention, the diameter of the air inlet hole is 1 cm-3 cm smaller than the diameter of the inscribed circle of the square substrate.
According to some embodiments of the invention, the upper cover is provided with a plurality of arc-shaped strip holes around the air inlet hole, and the arc-shaped strip holes penetrate through the upper cover.
According to some embodiments of the invention, the number of arcuate strip holes is four.
According to an embodiment of the invention, a method for improving photoresist coating cyclone patterns of a photomask substrate is applied to the device for improving photoresist coating cyclone patterns of a photomask substrate, and comprises the following steps:
S1, firstly placing a square substrate on a substrate bearing table, dripping photoresist on the center of the square substrate by using a photoresist dripping nozzle, then covering the upper cover, opening the air outlet of the photoresist coating cavity, forming local negative pressure in the photoresist coating cavity, enabling external air to enter the photoresist coating cavity from an air inlet of the upper cover to form air flow from the air inlet to the air outlet, rotating the substrate bearing table to drive the square substrate to rotate, starting photoresist throwing, and uniformly coating the photoresist on the surface of the square substrate;
and S2, after the gluing is finished, sending the square substrate into an oven for baking, and curing the photoresist.
According to the embodiment of the invention, the device for improving the photoresist-coated cyclone pattern of the photomask substrate has at least the following beneficial effects:
By improving the flow field and the humidity in the gluing cavity, the method accelerates the out-flow effect of photoresist in the inner cutting ring of the square substrate, thereby greatly improving the edge wind streak condition of the square substrate, and simultaneously improving the uniformity of the thickness of the photoresist and the process stability, so that the wind streak of the square substrate is reduced to be within 3mm from 30 mm-60 mm under the same process condition, and the average value in the chip is reduced from Reduced to/>Within the inner part.
According to some embodiments of the invention, in S1, the exhaust pressure of the exhaust port inside the glue cavity is 300pa to 800pa.
According to some embodiments of the invention, in S1, the translation speed of the glue dropping nozzle is 100 mm/S-150 mm/S, the glue spraying amount is 0.5 ml-2 ml, and the glue spraying speed is 0.5 ml/S-2 ml/S.
According to some embodiments of the invention, in S1, the rotation speed of the wafer carrier is 1000r/min to 3500r/min.
According to some embodiments of the invention, the baking temperature of the oven is 90-130 ℃ and the baking time is 10-60 min.
Additional aspects and advantages of the invention will be set forth in part in the description which follows.
Drawings
The invention is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram illustrating a structure of a device for improving photoresist pattern on a photomask substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a device for improving photoresist coating on a photomask substrate according to one embodiment of the invention;
FIG. 3 is a schematic view of a top cover of a photoresist coating cyclone improvement apparatus for a photomask substrate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a structure of a photomask substrate gummed cyclone improvement apparatus according to an embodiment of the present invention when the upper cover is closed;
FIG. 5 is a schematic diagram showing the airflow distribution of a photoresist pattern improving apparatus for a photomask substrate according to an embodiment of the present invention;
FIG. 6 is a schematic illustration of an improved front cyclone pattern on a square substrate;
FIG. 7 is a schematic view of a photoresist pattern coated on a square substrate after applying a device for improving the cyclone pattern on a photomask substrate according to one embodiment of the present invention;
FIG. 8 is a flow chart of a method for improving photoresist coating cyclone of a photomask substrate according to one embodiment of the invention;
Reference numerals:
101. A gluing cavity; 102. an upper cover; 103. an opening; 104. a wafer carrying table; 105. a square substrate; 106. an air outlet; 107. an air inlet hole; 108. arc-shaped strip holes; 109. and a glue dripping nozzle.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the direction or positional relationship indicated with respect to the description of the orientation, such as up, down, etc., is based on the direction or positional relationship shown in the drawings, is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In addition, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present invention.
The typical spin coating process mainly comprises three steps of glue dripping, spin coating and solvent volatilization. Firstly, spin-coating liquid drops are dripped on the surface of a substrate, then the liquid drops are spread by high-speed rotation to form a uniform film, the residual solvent is evaporated by drying, and finally, the film with stable performance is obtained.
Referring to fig. 1 to 7, a photoresist coating cyclone improving apparatus for a photomask substrate according to an embodiment of the present invention includes a photoresist coating chamber 101 and a top cover 102. The top of the gluing cavity 101 is provided with an opening 103, a wafer carrying table 104 is arranged in the gluing cavity 101, the wafer carrying table 104 is used for placing square substrates 105, the side wall of the gluing cavity 101 is provided with a plurality of air outlets 106, and the air outlets 106 are externally connected with ventilation equipment. The upper cover 102 is used for opening and closing the opening 103, and an air inlet hole 107 is formed in the middle of the upper cover 102, and the air inlet hole 107 penetrates through the upper cover 102.
The invention of the embodiment adopts the semi-closed cavity, on one hand, the semi-closed cavity avoids the influence of external wind flow, increases the humidity in the cavity, and ensures that the photoresist has stronger flow outside the inscribed circle of the square substrate; on the other hand, the internal air flow also rotates along with the closed cavity to form an annular flow field, so that the flowing effect of photoresist on the edge of the square substrate 105 is further accelerated, and the effect of improving the wind lines on the edge of the square substrate 105 is achieved. When the photoresist coating device is used, ventilation equipment communicated with the air outlet 106 in the photoresist coating cavity 101 is opened, local negative pressure is formed in the photoresist coating cavity 101, external air enters the photoresist coating cavity 101 from the air inlet 107 of the upper cover 102, air flow from the air inlet 107 to the air outlet 106 is formed, the air flow flows from the central area of the square substrate 105 to the periphery, photoresist is accelerated to flow to four corners, the accumulation of the photoresist at the four corners is reduced, the annular flow field is improved, cyclone lines are reduced, and the uniformity of the thickness of the photoresist and the process stability are improved.
Referring to fig. 1, 2 and 4, in some embodiments of the present invention, the air outlets 106 are disposed around the wafer stage 104, and the distances between two adjacent air outlets 106 are equal.
In some embodiments of the present invention, the aperture of the air inlet hole 107 is smaller than the diameter of the inscribed circle of the square substrate 105, so that the air inlet hole 107 of the upper cover 102 introduces the air flow vertically from the central area of the square substrate 105, and simultaneously, under the action of the air outlet 106 in the glue coating cavity 101, the air flow flows in the outer area of the inscribed circle of the square substrate 105 in parallel to the square substrate 105, and accelerates the movement of the photoresist to four corners.
In some embodiments of the present invention, the diameter of the air inlet holes 107 is 1cm to 3cm smaller than the diameter of the inscribed circle of the square substrate 105.
Referring to fig. 3, in some embodiments of the present invention, the upper cover 102 is provided with a plurality of arc-shaped strip holes 108 around the air inlet hole 107, the arc-shaped strip holes 108 penetrate the upper cover 102, and the arc-shaped strip holes 108 provide better air flowing effect.
In some embodiments of the invention, the number of arcuate strip holes 108 is four.
The photoresist pattern improving apparatus for a photomask substrate according to the present invention will be described in detail with reference to fig. 1 to 7 in a specific embodiment. It is to be understood that the following description is exemplary only and is not intended to limit the invention in any way.
Referring to fig. 1 to 7, the photoresist coating cyclone improvement apparatus for a photomask substrate includes a photoresist coating chamber 101 and a top cover 102. The top of the gluing cavity 101 is provided with an opening 103, a wafer carrying table 104 is arranged in the gluing cavity 101, the wafer carrying table 104 is used for placing square substrates 105, the side wall of the gluing cavity 101 is provided with a plurality of air outlets 106, the air outlets 106 are arranged in a surrounding mode by taking the wafer carrying table 104 as the center, the distances between two adjacent air outlets 106 are equal, and the air outlets 106 are externally connected with ventilation equipment. The upper cover 102 is used for opening and closing the opening 103, the middle part of the upper cover 102 is provided with an air inlet hole 107, the air inlet hole 107 penetrates through the upper cover 102, the aperture of the air inlet hole 107 is smaller than the diameter of an inscribed circle of the square substrate 105, and specifically, the diameter of the air inlet hole 107 is 1 cm-3 cm smaller than the diameter of the inscribed circle of the square substrate 105. The upper cover 102 is provided with 4 arc-shaped strip holes 108 around the air inlet hole 107. When the photoresist coating device is used, ventilation equipment communicated with the air outlet 106 in the photoresist coating cavity 101 is opened, local negative pressure is formed in the photoresist coating cavity 101, external air enters the photoresist coating cavity 101 from the air inlet 107 of the upper cover 102, air flow from the air inlet 107 to the air outlet 106 is formed, the air flow flows from the central area of the square substrate 105 to the periphery, photoresist is accelerated to flow to four corners, the accumulation of the photoresist at the four corners is reduced, the annular flow field is improved, cyclone lines are reduced, and the uniformity of the thickness of the photoresist and the process stability are improved.
Referring to fig. 1 to 8, a method for improving photoresist pattern on a photomask substrate according to an embodiment of the present invention is applied to the apparatus for improving photoresist pattern on a photomask substrate according to the above embodiment, and includes the following steps:
S1, firstly, placing a square substrate 105 on a substrate bearing table 104, dripping photoresist on the center of the square substrate 105 by using a photoresist dripping nozzle 109, then covering an upper cover 102, opening an air outlet 106 of a photoresist coating cavity 101, forming local negative pressure in the photoresist coating cavity 101, enabling external air to enter the photoresist coating cavity 101 from an air inlet 107 of the upper cover 102, forming air flow from the air inlet 107 to the air outlet 106, rotating the substrate bearing table 104 to drive the square substrate 105 to rotate, starting photoresist throwing, and uniformly coating the photoresist on the surface of the square substrate 105;
and S2, after the glue coating is completed, the square substrate 105 is sent into an oven for baking, and the photoresist is cured.
By improving the flow field and the humidity in the gluing cavity 101 and accelerating the external flow effect of photoresist in the inner cutting ring of the square substrate 105, the method can greatly improve the edge wind ripple condition of the square substrate 105, and simultaneously improve the thickness uniformity and the process stability of the glue, so that the wind ripple of the square substrate is reduced from 30 mm-60 mm wide to within 3mm under the same process condition, and the average value in the chip is fromReduced to/>Within the inner part.
During spin coating, solvent molecules within the photoresist move through the coating to the surface, evaporate in a very short time, and are then carried away by the exhaust system. The viscosity of the photoresist is further increased and the further thinning process is effectively stopped and a thin film is formed. Thus, the exhaust pressure is an important contributor to the uniformity of photoresist coating thickness, especially at the edges of square substrate 105. The correct exhaust pressure must be selected and the proper gas flow field constructed by the exhaust system structural design to achieve high uniformity and small defects. In S1, the exhaust pressure of the exhaust port 106 inside the glue coating chamber is 300pa to 800pa.
In some embodiments of the present invention, in S1, the translation speed of the dispensing nozzle 109 is 100mm/S to 150mm/S, the dispensing amount is 0.5ml to 2ml, and the dispensing speed is 0.5ml/S to 2ml/S.
In some embodiments of the present invention, in S1, the rotational speed of the tape carrier 104 is 1000r/min to 3500r/min.
In some embodiments of the invention, the baking temperature of the oven is 90 ℃ to 130 ℃ and the baking time is 10min to 60min.
Specifically, when the square substrate 105 is a 7-inch substrate, the width of the glue-coated wind lines on the square substrate 105 is less than 3mm after the square substrate 105 is processed by the method.
Referring to fig. 6 and 7, in particular, the test piece is a 6-inch square substrate 105, the sampling area is an equidistant rectangular lattice, the sampling points 11×11 are 121 points altogether, the distance between adjacent sampling points is 13.2mm, and the improvement effect is shown in table 1.
TABLE 1
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A photomask substrate gumming cyclone improvement apparatus, comprising:
The glue spreading device comprises a glue spreading cavity, wherein an opening is formed in the top of the glue spreading cavity, a piece bearing table is arranged in the glue spreading cavity and used for placing square substrates, a plurality of air outlets are formed in the side wall of the glue spreading cavity, and the air outlets are externally connected with ventilation equipment; and
The upper cover is used for opening and closing the opening, an air inlet hole is formed in the middle of the upper cover, and the air inlet hole penetrates through the upper cover.
2. The photomask substrate gumming cyclone improvement apparatus as set forth in claim 1, wherein: the exhaust outlets are arranged around the wafer bearing table as the center, and the distances between two adjacent exhaust outlets are equal.
3. The photomask substrate gumming cyclone improvement apparatus as set forth in claim 1, wherein: the aperture of the air inlet hole is smaller than the diameter of an inscribed circle of the square substrate.
4. The photomask substrate gumming cyclone improvement apparatus as set forth in claim 3, wherein: the diameter of the air inlet hole is 1 cm-3 cm smaller than the diameter of the inscribed circle of the square substrate.
5. The photomask substrate gumming cyclone improvement apparatus as set forth in claim 1, wherein: the upper cover takes the air inlet hole as the center and is wound with a plurality of arc-shaped strip holes, and the arc-shaped strip holes penetrate through the upper cover.
6. The photomask substrate gumming cyclone improvement apparatus as set forth in claim 5, wherein: the number of the arc-shaped strip holes is four.
7. A photomask substrate gumming cyclone improvement method, characterized in that the photomask substrate gumming cyclone improvement device as set forth in any one of claims 1 to 6 is applied, comprising the steps of:
S1, firstly placing a square substrate on a substrate bearing table, dripping photoresist on the center of the square substrate by using a photoresist dripping nozzle, then covering the upper cover, opening the air outlet of the photoresist coating cavity, forming local negative pressure in the photoresist coating cavity, enabling external air to enter the photoresist coating cavity from an air inlet of the upper cover to form air flow from the air inlet to the air outlet, and enabling the substrate bearing table to rotate so as to drive the square substrate to rotate, and starting photoresist throwing;
and S2, after the gluing is finished, sending the square substrate into an oven for baking, and curing the photoresist.
8. The method for improving photoresist-coated cyclone pattern on a photomask substrate according to claim 7, wherein: in S1, the exhaust pressure of the exhaust port inside the glue coating cavity is 300pa to 800pa.
9. The method for improving photoresist-coated cyclone pattern on a photomask substrate according to claim 7, wherein: in S1, the rotating speed of the wafer bearing table is 1000 r/min-3500 r/min.
10. The method for improving photoresist-coated cyclone pattern on a photomask substrate according to claim 7, wherein: the baking temperature of the baking oven is 90-130 ℃ and the baking time is 10-60 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410161502.6A CN118011736A (en) | 2024-02-05 | 2024-02-05 | Device and method for improving photoresist-coated cyclone patterns of photomask substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410161502.6A CN118011736A (en) | 2024-02-05 | 2024-02-05 | Device and method for improving photoresist-coated cyclone patterns of photomask substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118011736A true CN118011736A (en) | 2024-05-10 |
Family
ID=90957940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410161502.6A Pending CN118011736A (en) | 2024-02-05 | 2024-02-05 | Device and method for improving photoresist-coated cyclone patterns of photomask substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118011736A (en) |
-
2024
- 2024-02-05 CN CN202410161502.6A patent/CN118011736A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6171401B1 (en) | Process liquid dispense apparatus | |
| CN106707690B (en) | Photoresist coating method and apparatus | |
| KR0166102B1 (en) | Apparatus and method for spin coating liquid chemicals on wafers and the like | |
| US7199062B2 (en) | Method for forming a resist film on a substrate having non-uniform topography | |
| CN102259083B (en) | Spin-coating method of thick film used in semiconductor packaging | |
| CN109856914B (en) | Gluing device and method | |
| CN118011736A (en) | Device and method for improving photoresist-coated cyclone patterns of photomask substrate | |
| US6716285B1 (en) | Spin coating of substrate with chemical | |
| CN111905988A (en) | Photoresist coating method | |
| KR20020041418A (en) | Method and apparatus for controlling air over a spinning microelectronic substrate | |
| CN112596340A (en) | Photoresist coating method for wafer | |
| CN111722474A (en) | Method for improving square sheet edge gluing wind marks | |
| CN207502910U (en) | Glue spreading apparatus | |
| JP3194815B2 (en) | Resist coating equipment | |
| US6379744B1 (en) | Method for coating an integrated circuit substrate | |
| JPS61206224A (en) | Resist coating device | |
| US20040209417A1 (en) | Method and system for drying semiconductor wafers in a spin coating process | |
| JPH043624Y2 (en) | ||
| CN109062010A (en) | Improve the method for photoresist surface roughness | |
| KR100818671B1 (en) | Apparatus and method for coating photo-resist by silt scan and spin, and blank mask having a photo-resist film coated by the method and photo mask manufactured by using the same | |
| CN211195300U (en) | Coating equipment for fluorescent wheel | |
| JPS61238050A (en) | Coating method | |
| TWI765462B (en) | Manufacturing method of solar cell thin film | |
| CN117092887A (en) | Ultra-high viscosity photoresist spin coating method | |
| Kitano | Novel coating apparatus using nozzle-scan technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |