CN117979803A - Half heusler thermoelectric device and interface connection method thereof - Google Patents
Half heusler thermoelectric device and interface connection method thereof Download PDFInfo
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- CN117979803A CN117979803A CN202410168221.3A CN202410168221A CN117979803A CN 117979803 A CN117979803 A CN 117979803A CN 202410168221 A CN202410168221 A CN 202410168221A CN 117979803 A CN117979803 A CN 117979803A
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- 238000000034 method Methods 0.000 title claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000919 ceramic Substances 0.000 claims abstract description 60
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 52
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims description 42
- 238000005219 brazing Methods 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 240000004282 Grewia occidentalis Species 0.000 claims description 7
- 239000010431 corundum Substances 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 238000003466 welding Methods 0.000 abstract description 8
- 238000002490 spark plasma sintering Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012856 weighed raw material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Abstract
The device comprises a first aluminum nitride ceramic plate heat conduction insulating layer, a first welding material layer, a second welding material layer, a first nickel foil, a first half Hohler thermoelectric arm, a second silver foil, a third copper layer, a second aluminum nitride ceramic plate heat conduction insulating layer, a third silver foil, a second half Hohler thermoelectric arm, a third silver foil, a fourth silver foil, a third nickel foil, a fourth silver foil, a fifth nickel foil, a fifth welding material layer, a fifth aluminum nitride ceramic plate heat conduction insulating layer, a fifth copper-clad layer and a sixth copper-clad plate heat conduction insulating layer.
Description
Technical Field
The invention belongs to the technical field of thermoelectric materials and devices, and particularly relates to a half heusler thermoelectric device and an interface connection method thereof.
Background
The thermoelectric device has the advantages of no pollution, no noise, no maintenance and the like. For industrial waste heat recovery utilization, half heusler thermoelectric materials have good thermoelectric performance in a corresponding temperature region, and have excellent mechanical properties and thermal stability, which are reported to have the best hardness and elastic modulus among the series of thermoelectric materials and good thermoelectric performance reproducibility after thermal cycling, thus becoming potential candidate materials for manufacturing thermoelectric devices in a medium-high temperature region.
The thermoelectric device is composed of a plurality of pi-type thermoelectric pairs in series, and the basic constituent unit of the pi-type thermoelectric pairs comprises a pair of n-type and p-type thermoelectric arms arranged in parallel and electrodes at a high temperature end and a low temperature end, and the device is inevitably exposed to various mechanical and thermal stresses due to the severe conditions (high temperature, large temperature difference and current passing) of the operation of the thermoelectric device in a medium-high temperature region. And the interface of the electrode and the thermoelectric legs is the weakest point of the whole device connection but the most stressed point. Therefore, in the manufacturing process of the thermoelectric device, reliable connection of the interface between the high-temperature end electrode and the thermoelectric leg is always a core technology and key difficulty of the technical research, and the service condition and the actual service life of the device are directly related.
In the prior art, the interface connection method of the half heusler device generally adopts silver-based brazing solder to directly weld the thermoelectric arm and the electrode, so that the working temperature of the whole device is limited below the melting point (800 ℃) of the solder, and the device cannot meet the requirements of special working conditions.
Disclosure of Invention
The invention aims to provide a half heusler thermoelectric device and an interface connection method thereof, which enable the device to resist high temperature of 900 ℃ and be far higher than the highest use temperature (< 800 ℃) of the existing half heusler device. The improvement of the working temperature can make the half heusler thermoelectric material better exert the excellent thermoelectric performance in a high temperature area, and enrich the use scene of the device and expand the application range of the device to higher temperature.
In order to achieve the above purpose, the invention adopts the following scheme:
The half heusler thermoelectric device comprises a semiconductor,
The first copper-clad layer is used for covering the first copper-clad layer,
A first aluminum nitride ceramic plate heat-conducting insulating layer laminated on the first copper-clad layer,
A second copper-clad layer laminated on the first aluminum nitride ceramic plate heat-conducting insulating layer,
A first solder layer laminated on the second copper-clad layer,
A first nickel foil laminated on the first solder layer,
A first silver foil laminated on the first nickel foil,
A first half heusler thermoelectric arm supported at one end on the first silver foil,
A second silver foil laminated on the other end of the first half heusler thermoelectric arm,
A third copper-clad layer spaced apart and parallel to the first copper-clad layer,
A second aluminum nitride ceramic plate heat conductive insulating layer laminated on the third copper-clad layer,
A fourth copper-clad layer laminated on the second aluminum nitride ceramic plate heat-conducting insulating layer,
A second solder layer laminated on the fourth copper-clad layer,
A second nickel foil laminated on the second solder layer,
A third silver foil laminated on the second nickel foil,
A second half heusler thermoelectric arm supported at one end on the third silver foil,
A fourth silver foil laminated on the other end of the second half heusler thermoelectric arm,
A third nickel foil laminated on the second and fourth silver foils,
A third solder layer laminated on the third nickel foil,
A fifth copper-clad layer laminated on the third solder layer,
A third aluminum nitride ceramic plate heat conductive insulating layer laminated on the fifth copper clad layer,
And a sixth copper-clad layer laminated on the third aluminum nitride ceramic plate heat-conducting insulating layer.
In the half heusler thermoelectric device, the thicknesses of the first copper-clad layer, the second copper-clad layer, the third copper-clad layer, the fourth copper-clad layer, the fifth copper-clad layer and the sixth copper-clad layer are all 0.3mm.
In the half heusler thermoelectric device, the thicknesses of the first silver foil, the second silver foil, the third silver foil and the fourth silver foil are all 2mm.
In the half-heusler thermoelectric device, the thicknesses of the first nickel foil, the second nickel foil and the third nickel foil are all 1mm.
In the half heusler thermoelectric device, the thicknesses of the first aluminum nitride ceramic plate heat conduction insulating layer, the second aluminum nitride ceramic plate heat conduction insulating layer and the third aluminum nitride ceramic plate heat conduction insulating layer are all 0.635mm.
In the half-heusler thermoelectric device, the first solder layer, the second solder layer and the third solder layer are all Cu57ZnMnCo solder.
In the half heusler thermoelectric device, the second aluminum nitride ceramic plate heat conduction insulating layer is spaced and parallel to the first aluminum nitride ceramic plate heat conduction insulating layer, the fourth copper-clad layer is spaced and parallel to the second copper-clad layer, the second solder layer is spaced and parallel to the first solder layer, the second nickel foil is spaced and parallel to the first nickel foil, the second half heusler thermoelectric arm is spaced and parallel to the first half heusler thermoelectric arm, the third silver foil is spaced and parallel to the first silver foil, and the fourth silver foil is spaced and parallel to the second silver foil.
In the half-heusler thermoelectric device, the half-heusler thermoelectric device is of a symmetrical structure.
The interfacing method of the half heusler thermoelectric device includes the steps of,
Sequentially placing nickel foil and copper-clad ceramic plates together from top to bottom, smearing Cu57ZnMnCo solder paste in the middle, fixing the copper-clad ceramic plates by adopting four-corner punching graphite plates and screws on the upper and lower sides, performing vacuum brazing in a corundum tube furnace to obtain a welded nickel foil copper-clad ceramic plate, wherein the brazing temperature is 1020 ℃, the heat preservation time is 20 minutes, the copper-clad ceramic plate comprises an aluminum nitride ceramic plate heat-conducting insulating layer and copper-clad layers on two sides of the aluminum nitride ceramic plate heat-conducting insulating layer,
The nickel foil copper-clad ceramic plate is subjected to diamond cutting to form an electrode,
And (3) placing the electrode, the silver foil, the thermoelectric arm, the silver foil and the electrode from top to bottom in sequence, fixing the electrode by adopting a four-corner punching graphite plate and screws from top to bottom, and performing vacuum brazing in a corundum tube furnace at the brazing temperature of 1020 ℃ for 20 minutes to obtain the welded half-heusler thermoelectric device.
In the interface connection method, the manufacturing flow of the thermoelectric arm is as follows:
The raw materials of element Hf, zr, co, ni, sn, sb for preparing p-type thermoelectric arms of hf0.5zr0.5cosb0.8sn0.2 and n-type thermoelectric arms of hf0.75zr0.25nisn0.99sb0.01 were weighed according to the stoichiometric ratio;
arc melting the weighed raw materials in an argon atmosphere to synthesize an ingot, and overturning and repeating for more than three times to ensure the uniformity of the alloy;
Manually grinding the synthesized cast ingot in an agate mortar, filtering the powder through a 200-mesh sieve, filling a graphite mold with the diameter of 15mm, and solidifying the powder into a sample again through spark plasma sintering, wherein the spark plasma sintering of the p-type thermoelectric arm is performed under the pressure of 50MPa, the temperature is kept at 1200 ℃ for 5min, the heating rate is 100 ℃/min below 600 ℃, and then 50 ℃/min; the spark plasma sintering of the n-type thermoelectric arm is carried out at 1100 ℃ for 10min, the heating speed is 100 ℃/min below 600 ℃, and then 50 ℃/min;
The sample was diamond wire cut into a rectangular parallelepiped type thermoelectric arm of 3×3×6mm size and ultrasonically cleaned with absolute ethanol.
In the technical scheme, the half heusler thermoelectric device and the interface connection method thereof provided by the invention have the following performance characteristics: the interface connection has better bonding strength; the excessively high contact resistance and contact thermal resistance are not introduced; the material and the thickness of the interface layer are selected to avoid the occurrence of larger thermal stress to threaten the service life of the device; avoiding severe diffusion of the electrode and thermoelectric leg elements at the interface; the highest use temperature of the device is raised to 900 ℃ by selecting the interface layer type, and the application range of the device is enlarged.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings for a person having ordinary skill in the art.
FIG. 1 is a side view of a single pair of thermoelectric devices according to the present invention;
Fig. 2 is a perspective view of a single pair of thermoelectric devices according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In order to make the technical scheme of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to the accompanying drawings.
As shown in fig. 1-2, a half heusler thermoelectric device includes,
A first copper-clad layer 2b,
A first aluminum nitride ceramic plate heat conductive insulating layer 1c laminated on the first copper clad layer 2b,
A second copper-clad layer 2d laminated on the first aluminum nitride ceramic plate heat conductive insulating layer 1c,
A first solder layer 3b laminated on the second copper-clad layer 2d,
A first nickel foil 4b laminated on the first solder layer 3b,
A first silver foil 5b laminated on the first nickel foil 4b,
A first half heusler thermoelectric arm 6a, one end of which is supported on said first silver foil 5b,
A second silver foil 5a laminated on the other end of the first half heusler thermoelectric leg 6a,
A third copper-clad layer 2c spaced apart and parallel to the first copper-clad layer 2b,
A second aluminum nitride ceramic plate heat conductive insulating layer 1b laminated on the third copper clad layer 2c,
A fourth copper-clad layer 2e laminated on the second aluminum nitride ceramic plate heat conductive insulating layer 1b,
A second solder layer 3c laminated on the fourth copper-clad layer 2e,
A second nickel foil 4c laminated on the second solder layer 3c,
A third silver foil 5d laminated on the second nickel foil 4c,
A second half heusler thermoelectric arm 6b, one end of which is supported on the third silver foil 5d,
A fourth silver foil 5c laminated on the other end of the second half heusler thermoelectric leg 6b,
A third nickel foil 4a laminated on the second silver foil 5a and the fourth silver foil 5c,
A third solder layer 3a laminated on the third nickel foil 4a,
A fifth copper-clad layer 2f laminated on the third solder layer 3a,
A third aluminum nitride ceramic plate heat conductive insulating layer 1a laminated on the fifth copper clad layer 2f,
A sixth copper-clad layer 2a laminated on the third aluminum nitride ceramic plate heat conductive insulating layer 1 a.
In the preferred embodiment of the half heusler thermoelectric device, the thicknesses of the first copper-clad layer 2b, the second copper-clad layer 2d, the third copper-clad layer 2c, the fourth copper-clad layer 2e, the fifth copper-clad layer 2f and the sixth copper-clad layer 2a are all 0.3mm, so that the thermal stress generated at the interface in the welding process is reduced.
In the preferred embodiment of the half heusler thermoelectric device, the thicknesses of the first silver foil 5b, the second silver foil 5a, the third silver foil 5d and the fourth silver foil 5c are all 2mm, so that the thermal stress generated at the interface in the welding process is reduced.
In the preferred embodiment of the half heusler thermoelectric device, the thicknesses of the first nickel foil 4b, the second nickel foil 4c and the third nickel foil 4a are 1mm, so that the thermal stress generated at the interface in the welding process is reduced.
In the preferred embodiment of the half heusler thermoelectric device, the thicknesses of the first aluminum nitride ceramic plate heat conduction insulating layer 1c, the second aluminum nitride ceramic plate heat conduction insulating layer 1b and the third aluminum nitride ceramic plate heat conduction insulating layer 1a are all 0.635mm, so that the thermal stress generated at the interface in the welding process is reduced.
In the preferred embodiment of the half heusler thermoelectric device, the first, second and third solder layers 3b, 3c and 3a are all Cu57ZnMnCo solder.
In the preferred embodiment of the half heusler thermoelectric device, the second aluminum nitride ceramic plate heat conducting insulating layer 1b is spaced apart and parallel to the first aluminum nitride ceramic plate heat conducting insulating layer 1c, the fourth copper clad layer 2e is spaced apart and parallel to the second copper clad layer 2d, the second solder layer 3c is spaced apart and parallel to the first solder layer 3b, the second nickel foil 4c is spaced apart and parallel to the first nickel foil 4b, the second half heusler thermoelectric legs 6b are spaced apart and parallel to the first half heusler thermoelectric legs 6a, the third silver foil 5d is spaced apart and parallel to the first silver foil 5b, and the fourth silver foil 5c is spaced apart and parallel to the second silver foil 5a.
In the preferred embodiment of the half heusler thermoelectric device, the half heusler thermoelectric device has a symmetrical structure.
The interfacing method of the half heusler thermoelectric device includes the steps of,
Sequentially placing nickel foil and copper-clad ceramic plates together from top to bottom, smearing Cu57ZnMnCo solder paste in the middle, fixing the copper-clad ceramic plates by adopting four-corner punching graphite plates and screws on the upper and lower sides, performing vacuum brazing in a corundum tube furnace to obtain a welded nickel foil copper-clad ceramic plate, wherein the brazing temperature is 1020 ℃, the heat preservation time is 20 minutes, the copper-clad ceramic plate comprises an aluminum nitride ceramic plate heat-conducting insulating layer and copper-clad layers on two sides of the aluminum nitride ceramic plate heat-conducting insulating layer,
The nickel foil copper-clad ceramic plate is subjected to diamond cutting to form an electrode,
And (3) placing the electrode, the silver foil, the thermoelectric arm, the silver foil and the electrode from top to bottom in sequence, fixing the electrode by adopting a four-corner punching graphite plate and screws from top to bottom, and performing vacuum brazing in a corundum tube furnace at the brazing temperature of 1020 ℃ for 20 minutes to obtain the welded half-heusler thermoelectric device.
In a preferred embodiment of the interface connection method, the manufacturing flow of the thermoelectric legs is as follows:
The raw materials of element Hf, zr, co, ni, sn, sb for preparing p-type thermoelectric arms of hf0.5zr0.5cosb0.8sn0.2 and n-type thermoelectric arms of hf0.75zr0.25nisn0.99sb0.01 were weighed according to the stoichiometric ratio;
arc melting the weighed raw materials in an argon atmosphere to synthesize an ingot, and overturning and repeating for more than three times to ensure the uniformity of the alloy;
Manually grinding the synthesized cast ingot in an agate mortar, filtering the powder through a 200-mesh sieve, filling a graphite mold with the diameter of 15mm, and solidifying the powder into a sample again through spark plasma sintering, wherein the spark plasma sintering of the p-type thermoelectric arm is performed under the pressure of 50MPa, the temperature is kept at 1200 ℃ for 5min, the heating rate is 100 ℃/min below 600 ℃, and then 50 ℃/min; the spark plasma sintering of the n-type thermoelectric arm is carried out at 1100 ℃ for 10min, the heating speed is 100 ℃/min below 600 ℃, and then 50 ℃/min;
The sample was diamond wire cut into a rectangular parallelepiped type thermoelectric arm of 3×3×6mm size and ultrasonically cleaned with absolute ethanol.
In one embodiment, the silver foil in direct contact with the thermoelectric legs acts as a solder and also as a barrier layer to avoid significant diffusion of thermoelectric legs and electrode elements. The nickel foil is added between the silver foil and the copper-clad layer to avoid eutectic melting point caused by direct contact of the silver foil and the copper-clad layer.
The nickel foil and the copper-clad layer are connected by adding a brazing solder Cu57ZnMnCo in the middle for welding.
In one embodiment, high purity elements Hf (medium Jin Yan, 99.99%, granular), zr (medium Jin Yan, 99.99%, granular), co (medium Jin Yan, 99.99%, granular), ni (medium Jin Yan, 99.99%, granular), sn (medium Jin Yan, 99.99%, granular), sb (medium Jin Yan, 99.99%, granular) are first weighed according to a specific stoichiometric ratio for preparing hf0.5zr0.5cosb0.8sn0.2 (p-type) and hf0.75zr0.25nisn0.99sb0.01 (n-type) thermoelectric arm materials.
In one embodiment, the copper-clad ceramic plate and the nickel foil are cut into the size of 3×7mm, and then placed in the order of the copper-clad ceramic plate, the Cu57ZnMnCo solder paste, the nickel foil, the silver foil, the thermoelectric arm, the silver foil, the nickel foil, the Cu57ZnMnCo solder paste and the copper-clad ceramic plate, and fixed by adopting a four-corner punching graphite plate and a screw from top to bottom, and vacuum brazing is carried out in a corundum tube furnace, wherein the brazing temperature is 1020 ℃, and the heat preservation time is 20 minutes, so that the welded thermoelectric device is obtained. The melting points of the interface connection parts are respectively copper layers (1083 ℃, 960 ℃, nickel foils (1455 ℃) and Cu57ZnMnCo solder layers (930 ℃), so that after the whole assembly is finished, the thermoelectric device can withstand high temperatures of 900 ℃ and below without damage, and the working range of the half Hosler thermoelectric device in the prior assembly method is enlarged.
Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above-described specific embodiments and application fields, and the above-described specific embodiments are merely illustrative, and not restrictive. Those skilled in the art, having the benefit of this disclosure, may effect numerous forms of the invention without departing from the scope of the invention as claimed.
Claims (9)
1. A half Hohler thermoelectric device, characterized in that it comprises,
The first copper-clad layer is used for covering the first copper-clad layer,
A first aluminum nitride ceramic plate heat-conducting insulating layer laminated on the first copper-clad layer,
A second copper-clad layer laminated on the first aluminum nitride ceramic plate heat-conducting insulating layer,
A first solder layer laminated on the second copper-clad layer,
A first nickel foil laminated on the first solder layer,
A first silver foil laminated on the first nickel foil,
A first half heusler thermoelectric arm supported at one end on the first silver foil,
A second silver foil laminated on the other end of the first half heusler thermoelectric arm,
A third copper-clad layer spaced apart and parallel to the first copper-clad layer,
A second aluminum nitride ceramic plate heat conductive insulating layer laminated on the third copper-clad layer,
A fourth copper-clad layer laminated on the second aluminum nitride ceramic plate heat-conducting insulating layer,
A second solder layer laminated on the fourth copper-clad layer,
A second nickel foil laminated on the second solder layer,
A third silver foil laminated on the second nickel foil,
A second half heusler thermoelectric arm supported at one end on the third silver foil,
A fourth silver foil laminated on the other end of the second half heusler thermoelectric arm,
A third nickel foil laminated on the second and fourth silver foils,
A third solder layer laminated on the third nickel foil,
A fifth copper-clad layer laminated on the third solder layer,
A third aluminum nitride ceramic plate heat conductive insulating layer laminated on the fifth copper clad layer,
And a sixth copper-clad layer laminated on the third aluminum nitride ceramic plate heat-conducting insulating layer.
2. The half heusler thermoelectric device according to claim 1, wherein preferably the first, second, third, fourth, fifth and sixth copper layers each have a thickness of 0.3mm.
3. The half heusler thermoelectric device according to claim 1, wherein the first, second, third and fourth silver foils each have a thickness of 2mm.
4. The half heusler thermoelectric device according to claim 1, wherein the first nickel foil, the second nickel foil and the third nickel foil are each 1mm thick.
5. The half heusler thermoelectric device according to claim 1, wherein the first aluminum nitride ceramic plate thermally conductive insulating layer, the second aluminum nitride ceramic plate thermally conductive insulating layer and the third aluminum nitride ceramic plate thermally conductive insulating layer each have a thickness of 0.635mm.
6. The half heusler thermoelectric device according to claim 1, wherein the first, second and third solder layers are each Cu57ZnMnCo solder.
7. The half heusler thermoelectric device of claim 1, wherein a second aluminum nitride ceramic plate thermally conductive insulating layer is spaced apart and parallel to the first aluminum nitride ceramic plate thermally conductive insulating layer, a fourth copper clad layer is spaced apart and parallel to the second copper clad layer, a second solder layer is spaced apart and parallel to the first solder layer, a second nickel foil is spaced apart and parallel to the first nickel foil, a second half heusler thermoelectric arm is spaced apart and parallel to the first half heusler thermoelectric arm, a third silver foil is spaced apart and parallel to the first silver foil, and a fourth silver foil is spaced apart and parallel to the second silver foil.
8. The half heusler thermoelectric device according to claim 1, wherein the half heusler thermoelectric device is of symmetrical construction.
9. A method of interfacing a half Hohler thermoelectric device as set forth in any one of claims 1-8, comprising the steps of,
Sequentially placing nickel foil and copper-clad ceramic plates together from top to bottom, smearing Cu57ZnMnCo solder paste in the middle, fixing the copper-clad ceramic plates by adopting four-corner punching graphite plates and screws on the upper and lower sides, performing vacuum brazing in a corundum tube furnace to obtain a welded nickel foil copper-clad ceramic plate, wherein the brazing temperature is 1020 ℃, the heat preservation time is 20 minutes, the copper-clad ceramic plate comprises an aluminum nitride ceramic plate heat-conducting insulating layer and copper-clad layers on two sides of the aluminum nitride ceramic plate heat-conducting insulating layer,
The nickel foil copper-clad ceramic plate is subjected to diamond cutting to form an electrode,
And (3) placing the electrode, the silver foil, the thermoelectric arm, the silver foil and the electrode from top to bottom in sequence, fixing the electrode by adopting a four-corner punching graphite plate and screws from top to bottom, and performing vacuum brazing in a corundum tube furnace at the brazing temperature of 1020 ℃ for 20 minutes to obtain the welded half-heusler thermoelectric device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410168221.3A CN117979803A (en) | 2024-02-06 | 2024-02-06 | Half heusler thermoelectric device and interface connection method thereof |
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