CN117978104B - Power supply circuit with temperature compensation function and radio frequency amplifier - Google Patents
Power supply circuit with temperature compensation function and radio frequency amplifier Download PDFInfo
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- CN117978104B CN117978104B CN202410369102.4A CN202410369102A CN117978104B CN 117978104 B CN117978104 B CN 117978104B CN 202410369102 A CN202410369102 A CN 202410369102A CN 117978104 B CN117978104 B CN 117978104B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The application relates to the technical field of radio frequency, in particular to a power supply circuit with a temperature compensation function and a radio frequency amplifier, wherein the power supply circuit comprises a first amplifying module, a temperature-sensitive module, a second amplifying module and a voltage dividing module; the temperature-sensitive module includes: the thermistor is attached to the mos tube, and one end of the thermistor is connected with the power supply voltage through the voltage dividing module, and the other end of the thermistor is grounded; the second amplification module includes: a second resistor; a third resistor; the inverting input end of the first comparator is connected with one end of the thermistor and the output end of the first amplifying module through the second resistor and the third resistor respectively; and a fourth resistor. The power supply circuit can solve the problem that the performance of the mos tube is reduced due to the fact that the mos tube in the radio frequency amplifying circuit heats, and the reliability of the radio frequency amplifying circuit is reduced, and can achieve the effects of ensuring that the performance of the mos tube is good and the reliability of the radio frequency amplifying circuit is high in the working process of the radio frequency amplifying circuit.
Description
Technical Field
The application relates to the technical field of radio frequency, in particular to a power supply circuit with a temperature compensation function and a radio frequency amplifier.
Background
The existing radio frequency amplifying circuit generally comprises a mos tube, but the mos tube always in a conducting state generates heat in the working process of the radio frequency amplifying circuit, so that the conducting impedance of the mos tube is increased, and the load carrying capacity of the mos tube is reduced due to the reduction of the drain-source current of the mos tube; and the voltage and current between the gate and the source of the mos transistor are reduced due to the heated mos transistor, so that the performance of the mos transistor is reduced, and the reliability of the radio frequency amplifying circuit is reduced.
Accordingly, the prior art is subject to improvement and development.
Disclosure of Invention
The application aims to provide a power supply circuit with a temperature compensation function and a radio frequency amplifier, and aims to solve the problems that the performance of a mos tube is reduced and the reliability of the radio frequency amplifier circuit is reduced due to the fact that the mos tube in the radio frequency amplifier circuit generates heat.
In a first aspect, the application provides a power supply circuit with a temperature compensation function, which is used for supplying power to a grid electrode of a mos tube in a radio frequency amplifying circuit, and comprises a first amplifying module, a temperature sensitive module, a second amplifying module and a voltage dividing module;
The input end of the first amplifying module is connected with the power supply voltage and is used for outputting the reverse voltage to the second amplifying module;
The temperature-sensitive module includes:
one end of the thermistor is connected with the power supply voltage through a voltage dividing module, and the other end of the thermistor is grounded;
a first resistor connected in parallel with the thermistor;
the second amplification module includes:
A second resistor;
A third resistor;
the inverting input end of the first comparator is connected with one end of the thermistor and the output end of the first amplifying module through the second resistor and the third resistor respectively, the non-inverting input end of the first comparator is grounded, and the output end of the first comparator is connected with the grid electrode of the mos tube;
and the inverting input end of the first comparator is connected with the output end of the fourth resistor through the fourth resistor.
The power supply circuit with the temperature compensation function provided by the application is provided with the first amplifying module, the second amplifying module and the temperature-sensitive module comprising the thermistor, so that the voltage between the grid electrode and the source electrode of the mos tube can be compensated; the power supply circuit with the temperature compensation function is provided with the thermistor attached to the mos tube, and when the temperature of the mos tube is increased, the heat of the mos tube can be transferred to the thermistor, so that the temperature increase of the mos tube can be inhibited, the good performance of the mos tube in the working process of the radio frequency amplifying circuit is ensured, and the reliability of the radio frequency amplifying circuit is high.
Optionally, the first amplifying module includes:
the output end of the second comparator is connected with the inverting input end of the first comparator;
The inverting input end of the second comparator is connected with the power supply voltage through the fifth resistor;
the inverting input end of the second comparator is connected with the output end of the second comparator through the sixth resistor;
and the non-inverting input end of the second comparator is grounded through the seventh resistor.
Optionally, the power supply circuit further includes:
and the base electrode and the collector electrode of the triode are connected with the output end of the first comparator, and the emitting electrode of the triode is grounded.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the triode with base and collector connected to the output terminal of the first comparator, and can compensate the reduced gate current by the reduced amount of the base current and the reduced amount of the collector current when the temperature of the mos transistor increases, thereby compensating the current between the gate and the source of the mos transistor, and combining the temperature sensitive module to compensate the voltage between the gate and the source of the mos transistor to reduce the influence of the temperature increase on the performance of the mos transistor as much as possible.
Optionally, the power supply circuit further includes:
And the base electrode of the triode is connected with the output end of the first comparator through the voltage stabilizing module, and the voltage stabilizing module is used for stabilizing the voltage of the base electrode of the input triode.
In this embodiment, the voltage stabilizing module is disposed between the output end of the first comparator and the base electrode of the triode, so that when the temperature of the mos transistor increases, the correspondence relationship between the collector current reduction amount, the base current reduction amount and the current reduction amount output by the first comparator can be kept accurate, and the correspondence relationship between the current reduction amount input to the gate of the mos transistor and the current reduction amount output by the first comparator can be kept accurate.
Optionally, the voltage stabilizing module includes:
the positive terminal of the voltage stabilizing diode is connected with the base electrode of the triode, and the negative terminal of the voltage stabilizing diode is connected with the grid electrode of the mos tube.
In the embodiment, the power supply circuit with the temperature compensation function is provided with the voltage stabilizing module comprising the voltage stabilizing diode, so that the voltage stabilizing treatment on the base electrode of the triode can be realized; and the number and the regulated value of the zener diodes are set as required in this embodiment, the voltage of the base electrode of the input triode can be controlled to control the amount by which the base current and the collector current are reduced when the temperature of the mos transistor increases, so that the amount by which the current input to the gate of the mos transistor is reduced can be precisely controlled.
Optionally, the voltage division module is used for changing the voltage division to change the voltage input to the inverting input terminal of the first comparator.
Optionally, the voltage dividing module includes:
one end of the first sliding rheostat is connected with the power supply voltage, and the other end of the first sliding rheostat is grounded;
and the middle end of the first sliding rheostat is connected with one end of the thermistor through the eighth resistor.
Optionally, the power supply circuit further includes:
And the negative electrode of the first filter capacitor is connected with the grid electrode of the mos tube, and the positive electrode of the first filter capacitor is grounded.
Optionally, the second amplifying module further includes:
And the non-inverting input end of the first comparator is grounded through the ninth resistor, and the resistance value of the ninth resistor is the same as that of the second resistor, the third resistor and the fourth resistor which are connected in parallel.
In a second aspect, the present application also provides a radio frequency amplifier, including any one of the above power supply circuits with temperature compensation function.
The radio frequency amplifier provided by the application is provided with the first amplifying module, the second amplifying module and the temperature-sensitive module comprising the thermistor, so that the voltage between the gate and the source of the mos tube can be compensated; the radio frequency amplifier is provided with the thermistor attached to the mos tube, and when the temperature of the mos tube is increased, the heat of the mos tube can be transferred to the thermistor, so that the temperature increase of the mos tube can be inhibited, and the good performance of the mos tube and the high reliability of the radio frequency amplifying circuit in the working process of the radio frequency amplifying circuit are ensured.
As can be seen from the above, the present application provides a power supply circuit and a radio frequency amplifier with temperature compensation function, wherein the power supply circuit with temperature compensation function provided by the present application is provided with a first amplifying module, a second amplifying module and a temperature-sensitive module including a thermistor, and can compensate the voltage between the gate and the source of a mos tube; the power supply circuit with the temperature compensation function is provided with the thermistor attached to the mos tube, and when the temperature of the mos tube is increased, the heat of the mos tube can be transferred to the thermistor, so that the temperature increase of the mos tube can be inhibited, the good performance of the mos tube in the working process of the radio frequency amplifying circuit is ensured, and the reliability of the radio frequency amplifying circuit is high.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
Fig. 1 is a circuit diagram of a power supply circuit with a temperature compensation function according to an embodiment of the present application.
Fig. 2 is a circuit diagram of a first amplifying module according to an embodiment of the present application.
Fig. 3 is a circuit diagram of a temperature-sensitive module according to an embodiment of the present application.
Fig. 4 is a circuit diagram of a second amplifying module according to an embodiment of the present application.
Fig. 5 is a circuit diagram of a voltage stabilizing module according to an embodiment of the present application.
Fig. 6 is a circuit diagram of a voltage dividing module according to an embodiment of the application.
Fig. 7 is a test circuit for determining the relationship between the voltage and the current between the gate and the source of the mos transistor and the temperature according to an embodiment of the present application.
Description of the reference numerals: a1, a first comparator; a2, a second comparator; c1, a first filter capacitor; c2, a second filter capacitor; D. a zener diode; m, mos pipes; an NTC and a thermistor; p1, a first slide rheostat; p2, a second slide rheostat; q, a third transistor; r1, a first resistor; r2, a second resistor; r3, a third resistor; r4, a fourth resistor; r5, a fifth resistor; r6, a sixth resistor; r7, a seventh resistor; r8, eighth resistor; r9, ninth resistor; r10, tenth resistor; VDC, supply voltage; v o1, first output voltage; v o2, second output voltage; v o3, third output voltage; v 1, first input voltage; 1. a first amplifying module; 2. a temperature-sensitive module; 3. a second amplification module; 4. a voltage stabilizing module; 5. and the voltage dividing module.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
For the mos tube M, the relationship between the carrier mobility in the inversion layer and the temperature is approximately μ -c T 3/(-2), where μ is the carrier mobility and T is the temperature, i.e., as the temperature of the mos tube M increases, the carrier mobility in the inversion layer decreases; and since the on-resistance of the mos transistor M increases with the decrease of the carrier mobility, and the drain-source current of the mos transistor M decreases with the increase of the on-resistance thereof under the condition that the drain-source voltage is unchanged, the load carrying capacity of the mos transistor M decreases with the increase of the on-resistance thereof and the decrease of the drain-source current thereof, so that the load carrying capacity of the mos transistor M decreases with the increase of the temperature of the mos transistor M.
Secondly, for mos tube M, the formula of the conductivity factor is: k 1=k1 ' W/L, where k 1 is the conductivity factor, k 1 ' is the intrinsic conductivity factor, W is the channel width, L is the channel length, and the formula for k 1 ' is: k 1'=μεOX/2tOX, wherein ε OX is the dielectric constant of the oxide layer, t OX is the thickness of the oxide layer between the gate region and the channel, and the above parameters are not affected by temperature, but the above parameters can be understood that μ decreases with the temperature of the mos transistor M, and the conductivity factor decreases with the temperature of the mos transistor M, so that the channel conductivity of the mos transistor M decreases with the temperature of the mos transistor M.
In addition, for the mos transistor M, the threshold voltage is expressed as V T=φma+2φF-QOX/COX-Qb/COX, wherein V T is the threshold voltage of the mos transistor M, phi ma is the contact potential difference between the polysilicon gate and the silicon substrate, phi F is the Fermi potential, Q OX is positive charge per unit area of oxide layer, Q b is charge density of depletion region, C OX is gate oxide capacitance per unit area, and wherein parameters having significant change upon temperature change are phi F and Q b, other parameters are affected by temperature in a negligible way, and the formula of phi F is: phi F=kT/q*ln（NA/ni), where k is the boltzmann constant, q is the charge amount, N A is the doping concentration of the substrate, N i is the intrinsic carrier concentration, And n i is as follows: n i=3.9*1016*T3/2*exp（-Eg/2 kT), wherein exp is a natural constant, E g is a forbidden bandwidth, thus phi F is reduced along with the temperature rise of the mos tube M, and the formula of Q b is as follows: q b=-sqrt（4qεSNAφF), where sqrt is the root number, Epsilon S is the dielectric constant of the silicon surface, so that Q b decreases with decreasing phi F, and in turn also decreases with increasing mos tube M temperature; The threshold voltage of the mos transistor M is thus reduced with an increase in temperature, and the threshold voltage of the mos transistor M is the voltage between the gate and the source when the mos transistor M is turned on, and thus the voltage between the gate and the source of the mos transistor M is also reduced with an increase in temperature. Therefore, as the temperature of the mos transistor M increases, its carrying capacity decreases, the channel conductivity decreases, and the voltage between the gate and the source decreases with the temperature increase, so that the performance of the mos transistor M decreases.
As shown in fig. 7, fig. 7 is a test circuit for determining a relationship between voltage and current between a gate and a source of a mos transistor M and temperature, the test circuit comprising:
and a second sliding resistor P2 having one end connected to the power supply voltage VDC and the other end grounded and the middle end connected to the gate of the mos transistor M.
In the first test, the test circuit is operated, and when the temperature of the mos transistor M rises, the voltage and current between the gate and the source thereof are measured to decrease; in the second test, the test circuit is stopped and the temperature of the mos transistor M is returned to the initial temperature, the position of the middle end of the second slide rheostat P2 is moved so that the resistance of the portion connected in series with the mos transistor M is reduced, and the test circuit is restarted, and when the temperature of the mos transistor M rises to be the same as that in the first test, the amount of voltage and current drop between the gate and the source thereof is measured to be reduced as compared with that in the first test. During the second test, the voltage of the portion of the second slide rheostat P2 connected in series with the mos transistor M is reduced so that the voltage input to the gate of the mos transistor M is increased. Therefore, when the temperature of the mos transistor M rises, the voltage and current between the gate and the source thereof decrease, and increasing the voltage input to the gate of the mos transistor M compensates for the decreased voltage between the gate and the source of the mos transistor M.
In a first aspect, as shown in fig. 1,3 and 4, the present application provides a power supply circuit with a temperature compensation function, for supplying power to a gate of a mos tube M in a radio frequency amplifying circuit, including a first amplifying module 1, a temperature sensitive module 2, a second amplifying module 3 and a voltage dividing module 5;
the input end of the first amplifying module 1 is connected with a power supply voltage VDC and is used for outputting an inverted voltage to the second amplifying module 3;
the temperature-sensitive module 2 includes:
a thermistor NTC is attached to the mos tube M, one end of the thermistor NTC is connected with a power supply voltage VDC through a voltage dividing module 5, and the other end of the thermistor NTC is grounded;
A first resistor R1 connected in parallel with the thermistor NTC;
The second amplification module 3 includes:
A second resistor R2;
A third resistor R3;
The inverting input end of the first comparator A1 is connected with one end of the thermistor NTC and the output end of the first amplifying module 1 through a second resistor R2 and a third resistor R3 respectively, the non-inverting input end of the first comparator A is grounded, and the output end of the first comparator A is connected with the grid electrode of the mos tube M;
the inverting input terminal of the first comparator A1 is connected to the output terminal of the fourth resistor R4 through the fourth resistor R4.
Specifically, when the power supply circuit works, the power supply voltage VDC supplies power to the first amplifying module 1, the voltage input to the first amplifying module 1 is denoted as a first input voltage V 1, the first amplifying module 1 amplifies and inverts the first input voltage V 1 and outputs an inverted voltage to an inverted input terminal of the first comparator A1, and the inverted voltage is denoted as a first output voltage V o1; The power supply voltage VDC is connected to the thermistor NTC through the voltage dividing module 5, and since the inverting input terminal of the first comparator A1 is connected to the thermistor NTC through the second resistor R2, the voltage input to the thermistor NTC by the power supply voltage VDC through the voltage dividing module 5 is the same as the voltage input to the inverting input terminal of the first comparator A1 by the power supply voltage VDC through the voltage dividing module 5, and this voltage is denoted as the second output voltage V o2; Since the inverting input terminal of the first comparator A1 is connected to the output terminal thereof through the fourth resistor R4, the first comparator A1 amplifies and inverts the first output voltage V o1 and the second output voltage V o2, outputs a voltage to the gate of the mos transistor M, and records the voltage as the third output voltage V o3. Wherein V o1=-αV1, alpha is the multiple of the voltage V 1 input into the first amplifying module 1 by the first amplifying module 1, V o3=-[Vo1*(R4/R3)+ Vo2*(R4/R2), namely V o3=αV1*(R4/R3)- Vo2*(R4/R2), wherein R 4 is the resistance of the fourth resistor R4, R 3 is the resistance of the third resistor R3, and R 2 is the resistance of the second resistor R2. In this formula, V o1 sets the coefficient of a single expression of the expression V o3 positive for matching V o2 to characterize V o3, v o2 is regulated and controlled based on a thermistor NTC, and the value of the V o2 is inversely related to the temperature and is used for compensating V o3 in cooperation with V o1. therefore, the power supply circuit can supply power to the gate of the mos transistor M in the radio frequency amplification circuit.
More specifically, the temperature coefficient of the thermistor NTC is determined based on the characteristic of the voltage between the gate and source of the mos transistor M with respect to the temperature change.
More specifically, when the temperature of the mos transistor M increases, the temperature of the thermistor NTC in contact therewith increases, the resistance value of the thermistor NTC decreases, the value of the voltage input to the thermistor NTC decreases, and since the inverting input terminal of the first comparator A1 is connected to one end of the thermistor NTC through the second resistor R2, the value of the second output voltage V o2 also decreases, while the value of the first output voltage V o1 does not change, and then the value of V o3 increases, i.e., the value of the voltage input to the gate of the mos transistor M increases, so that when the temperature of the mos transistor M increases to cause the voltage between the gate and the source of the mos transistor M to decrease, the voltage between the gate and the source of the mos transistor M can be compensated. In addition, since the mos tube M is attached to the thermistor NTC, when the temperature of the mos tube M increases, the heat of the mos tube M is transferred to the thermistor NTC, thereby suppressing the temperature increase of the mos tube M.
More specifically, if only the temperature-sensitive module 2 and the second amplifying module 3 are provided, the second amplifying module 3 can only output a negative voltage to the gate of the mos transistor M, whereas the embodiment of the present application provides the first amplifying module 1, the temperature-sensitive module 2 and the second amplifying module 3, which can input a positive voltage and a negative voltage to the inverting input terminal of the first comparator A1, and then can determine the positive and negative of the voltage output by the first comparator A1 to the gate of the mos transistor M by regulating the values of the positive voltage and the negative voltage.
The power supply circuit with the temperature compensation function provided by the application is provided with the first amplification module 1, the second amplification module 3 and the temperature-sensitive module 2 comprising the thermistor NTC, so that the voltage between the grid electrode and the source electrode of the mos tube M can be compensated; the power supply circuit with the temperature compensation function is provided with the thermistor NTC attached to the mos tube M, so that heat of the mos tube M can be transferred to the thermistor NTC when the temperature of the mos tube M is increased, the temperature increase of the mos tube M can be inhibited, and the mos tube M is ensured to have good performance and high reliability in the working process of the radio frequency amplifying circuit.
Preferably, the power supply circuit further includes:
The output end of the first comparator A1 is connected with the grid electrode of the mos tube M through a tenth resistor R10.
As shown in fig. 2, in some preferred embodiments, the first amplification module 1 comprises:
The output end of the second comparator A2 is connected with the inverting input end of the first comparator A1;
a fifth resistor R5, and an inverting input terminal of the second comparator A2 is connected to the power supply voltage VDC through the fifth resistor R5;
the inverting input end of the second comparator A2 is connected with the output end of the sixth resistor R6 through the sixth resistor R6;
The non-inverting input terminal of the second comparator A2 is grounded through the seventh resistor R7.
Specifically, since the non-inverting input terminal of the second comparator A2 is grounded through the seventh resistor R7, the voltage V 1 input to the first amplifying module 1 can be amplified and inverted, where α=r6/R5, where R 6 is the resistance of the sixth resistor R6, and R 5 is the resistance of the fifth resistor R5.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the first amplifying module 1 including the second comparator A2, and can amplify and invert the voltage V 1 input to the first amplifying module 1.
Preferably, the resistance of the fifth resistor R5 and the sixth resistor R6 are the same, and the value of α is 1, v o1=- V1.
In some preferred embodiments, the power supply circuit further comprises:
and the base electrode and the collector electrode of the triode Q are connected with the output end of the first comparator A1, and the emitter electrode of the triode Q is grounded.
Specifically, when the power supply circuit works, the current output by the output end of the first comparator A1 is input into the grid electrode of the mos transistor M, the base electrode of the triode Q and the collector electrode of the triode Q. Taking the triode Q and the mos tube M as a module, after the power supply circuit works for a period of time, the temperature of the mos tube M rises, the impedance increases, so that the resistance of the module increases, the input current of the module decreases, and the current is recorded as delta I 1; for transistor Q, the base current is proportional to the collector current, the ratio of collector current to base current is the amplification factor of transistor Q, so when the current input to the module decreases, the base current decreases, the collector current also decreases, the ratio of the amount of collector current decrease to the amount of base current decrease is the amplification factor of transistor Q, the amount of collector current decrease is denoted as Δi C, the amount of base current decrease is denoted as Δi B, and the amount of current decrease at this time input to the gate of mos transistor M is denoted as Δi G. In the embodiment without the transistor Q and in which the current output from the output terminal of the first comparator A1 is directly input to the gate of the mos transistor M, the current reduction amount input to the gate of the mos transistor M at this time is denoted as Δi 2, and Δi 1=ΔI2=ΔIC+ΔIB+ΔIG, compared with the embodiment without the transistor Q, the present embodiment can compensate the reduced gate current by the base current reduction amount and the collector current reduction amount when the temperature of the mos transistor M increases, thereby compensating the current between the gate and the source of the mos transistor M, and reducing the influence of the temperature increase on the performance of the mos transistor M by combining the temperature-sensitive module 2 with the compensation function of the voltage between the gate and the source of the mos transistor M.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the transistor Q with base and collector connected to the output terminal of the first comparator A1, and can compensate the reduced gate current by the reduced amount of the base current and the reduced amount of the collector current when the temperature of the mos transistor M increases, thereby compensating the current between the gate and the source of the mos transistor M, and reducing the influence of the temperature increase on the performance of the mos transistor M as much as possible in combination with the temperature-sensitive module 2 for the voltage compensation function between the gate and the source of the mos transistor M.
In some preferred embodiments, the power supply circuit further comprises:
The base of the triode Q is connected with the output end of the first comparator A1 through the voltage stabilizing module 4, and the voltage stabilizing module 4 is used for stabilizing the voltage of the base of the input triode Q.
Specifically, the voltage stabilizing module 4 may be an existing circuit structure having a voltage stabilizing function. Since the voltage stabilizing module 4 carries out voltage stabilizing treatment on the voltage of the base electrode of the input triode Q, the embodiment can avoid the change of the base electrode current due to unstable base electrode voltage, and the corresponding relation between the quantity of the reduced base electrode current and the quantity of the reduced current output by the first comparator A1 is kept accurate when the temperature of the mos tube M is increased; since the collector current is proportional to the base current, the present embodiment can maintain accurate correspondence between the amount of collector current decrease, the amount of base current decrease, and the amount of current decrease output from the first comparator A1 when the temperature of the mos transistor M increases, so that the amount of current decrease input to the gate of the mos transistor M can be precisely controlled.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the voltage stabilizing module 4 between the output terminal of the first comparator A1 and the base electrode of the triode Q, and can maintain the correspondence relationship between the collector current reduction amount, the base current reduction amount and the current reduction amount outputted by the first comparator A1 to be accurate when the temperature of the mos transistor M increases, so that the correspondence relationship between the current reduction amount inputted to the gate electrode of the mos transistor M and the current reduction amount outputted by the first comparator A1 can be maintained to be accurate.
As shown in fig. 5, in some preferred embodiments, the voltage stabilizing module 4 includes:
The positive terminal of the zener diode D is connected to the base of the transistor Q, and the negative terminal is connected to the gate of the mos transistor M.
Specifically, the number of zener diodes D and the voltage stabilizing value may be set as needed.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the voltage stabilizing module 4 including the voltage stabilizing diode D, which can implement voltage stabilizing treatment on the voltage of the base electrode of the triode Q; and the number and the regulated value of the zener diodes D are set as needed in this embodiment, the voltage of the base electrode of the input transistor Q can be controlled to control the amount by which the base current and the collector current are reduced when the temperature of the mos transistor M increases, so that the amount by which the current input to the gate electrode of the mos transistor M is reduced can be precisely controlled.
In some preferred embodiments, the voltage division of the voltage division module 5 is adjustable, and the voltage division module 5 is configured to change its voltage division to change the voltage input to the inverting input terminal of the first comparator A1.
In this embodiment, the voltage dividing module 5 with adjustable voltage division is provided in the power supply circuit with temperature compensation function of the present application, and the voltage division of the voltage dividing module 5 can be adjusted to adjust the voltage input to the inverting input end of the first comparator A1, so that the voltage input to the gate of the mos transistor M from the output end of the first comparator A1 can be precisely controlled, and the voltage between the gate and the source of the mos transistor M can be precisely compensated by cooperating with the temperature sensitive module 2.
As shown in fig. 6, in some preferred embodiments, the voltage dividing module 5 includes:
A first slide rheostat P1 having one end connected to the power supply voltage VDC and the other end grounded;
and an eighth resistor R8, wherein the middle end of the first slide rheostat P1 is connected with one end of the thermistor NTC through the eighth resistor R8.
Specifically, the voltage dividing module 5 may be a circuit structure that can change its own voltage division, such as a circuit having a switching tube and a plurality of resistors, and in this embodiment, the voltage dividing module 5 includes a first slide rheostat P1 and an eighth resistor R8, and the voltage dividing module 5 changes its voltage division by adjusting the position of the middle end of the first slide rheostat P1 to change the overall resistance of the voltage dividing module 5.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the voltage dividing module 5 including the first slide rheostat P1 and the eighth resistor R8, and can realize the adjustment of the voltage divided by the voltage dividing module 5 to adjust the voltage inputted to the inverting input terminal of the first comparator A1.
In some preferred embodiments, the power supply circuit further comprises:
The negative terminal of the first filter capacitor C1 is connected with the grid electrode of the mos tube M, and the positive terminal of the first filter capacitor C1 is grounded.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the first filter capacitor C1, and can keep the voltage of the gate electrode of the mos transistor M stable when the power supply circuit is operated.
Preferably, the power supply circuit further includes:
the negative terminal of the second filter capacitor C2 is connected to the inverting input terminal of the first comparator A1, and the positive terminal thereof is grounded.
In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with the second filter capacitor C2, and the voltage input to the inverting input terminal of the first comparator A1 can be kept stable when the power supply circuit is operated.
In some preferred embodiments, the second amplification module 3 further comprises:
And a ninth resistor R9, wherein the non-inverting input end of the first comparator A1 is grounded through the ninth resistor R9, and the resistance value of the ninth resistor R9 is the same as that when the second resistor R2, the third resistor R3 and the fourth resistor R4 are connected in parallel.
In this embodiment, in the power supply circuit with temperature compensation function of the present application, the resistance value of the ninth resistor R9 is the same as the resistance value when the second resistor R2, the third resistor R3, and the fourth resistor R4 are connected in parallel, and the equivalent resistance values of the resistor connected to the non-inverting input terminal of the first comparator A1 and the resistor connected to the inverting input terminal of the first comparator A1 can be the same, so that errors caused by the formation of static input voltage by the bias current on the resistors can be avoided.
In a second aspect, the present application also provides a radio frequency amplifier, including any one of the above power supply circuits with temperature compensation function.
The radio frequency amplifier provided by the application is provided with the first amplifying module 1, the second amplifying module 3 and the temperature-sensitive module 2 comprising the thermistor NTC, so that the voltage between the grid electrode and the source electrode of the mos tube M can be compensated; the radio frequency amplifier is provided with the thermistor NTC attached to the mos tube M, and when the temperature of the mos tube M is increased, the heat of the mos tube M can be transferred to the thermistor NTC, so that the temperature increase of the mos tube M can be inhibited, the good performance of the mos tube M in the working process of the radio frequency amplifying circuit is ensured, and the reliability of the radio frequency amplifying circuit is high.
As can be seen from the above, the present application provides a power supply circuit and a radio frequency amplifier with temperature compensation function, wherein the power supply circuit with temperature compensation function provided by the present application is provided with a first amplifying module 1, a second amplifying module 3 and a temperature sensitive module 2 including a thermistor NTC, and can compensate the voltage between the gate and the source of a mos tube M; the power supply circuit with the temperature compensation function is provided with the thermistor NTC attached to the mos tube M, so that heat of the mos tube M can be transferred to the thermistor NTC when the temperature of the mos tube M is increased, the temperature increase of the mos tube M can be inhibited, and the mos tube M is ensured to have good performance and high reliability in the working process of the radio frequency amplifying circuit.
In the embodiments provided herein, it should be understood that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above embodiments of the present application are only examples, and are not intended to limit the scope of the present application, and various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (9)
1. The power supply circuit with the temperature compensation function is used for supplying power to the grid electrode of a mos tube in the radio frequency amplifying circuit and is characterized by comprising a first amplifying module (1), a temperature sensitive module (2), a second amplifying module (3) and a voltage dividing module (5);
The input end of the first amplifying module (1) is connected with a power supply voltage and is used for outputting an inverted voltage to the second amplifying module (3);
The temperature-sensitive module (2) comprises:
one end of the thermistor is connected with the power supply voltage through the voltage dividing module (5), and the other end of the thermistor is grounded;
a first resistor connected in parallel with the thermistor;
The second amplification module (3) comprises:
A second resistor;
A third resistor;
the inverting input end of the first comparator is connected with one end of the thermistor and the output end of the first amplifying module (1) through the second resistor and the third resistor respectively, the non-inverting input end of the first comparator is grounded, and the output end of the first comparator is connected with the grid electrode of the mos tube;
The inverting input end of the first comparator is connected with the output end of the first comparator through the fourth resistor;
the first amplification module (1) comprises:
The output end of the second comparator is connected with the inverting input end of the first comparator;
The inverting input end of the second comparator is connected with the power supply voltage through the fifth resistor;
the inverting input end of the second comparator is connected with the output end of the second comparator through the sixth resistor;
and the non-inverting input end of the second comparator is grounded through the seventh resistor.
2. The power supply circuit with temperature compensation function according to claim 1, further comprising:
And the base electrode and the collector electrode of the triode are connected with the output end of the first comparator, and the emitter electrode of the triode is grounded.
3. A power supply circuit with temperature compensation function according to claim 2, characterized in that the power supply circuit further comprises:
The base electrode of the triode is connected with the output end of the first comparator through the voltage stabilizing module (4), and the voltage stabilizing module (4) is used for stabilizing the voltage input into the base electrode of the triode.
4. A power supply circuit with temperature compensation function according to claim 3, characterized in that the voltage stabilizing module (4) comprises:
and the positive terminal of the voltage stabilizing diode is connected with the base electrode of the triode, and the negative terminal of the voltage stabilizing diode is connected with the grid electrode of the mos tube.
5. A power supply circuit with temperature compensation function according to claim 1, characterized in that the voltage division of the voltage division module (5) is adjustable, the voltage division module (5) being adapted to vary its voltage division to vary the voltage input to the inverting input of the first comparator.
6. A power supply circuit with temperature compensation function according to claim 5, characterized in that the voltage dividing module (5) comprises:
one end of the first sliding rheostat is connected with the power supply voltage, and the other end of the first sliding rheostat is grounded;
and the middle end of the first sliding rheostat is connected with one end of the thermistor through the eighth resistor.
7. The power supply circuit with temperature compensation function according to claim 1, further comprising:
and the negative electrode end of the first filter capacitor is connected with the grid electrode of the mos tube, and the positive electrode of the first filter capacitor is grounded.
8. A power supply circuit with temperature compensation function according to claim 1, characterized in that the second amplification module (3) further comprises:
and the non-inverting input end of the first comparator is grounded through the ninth resistor, and the resistance value of the ninth resistor is the same as that of the second resistor, the third resistor and the fourth resistor which are connected in parallel.
9. A radio frequency amplifier comprising a supply circuit with temperature compensation according to any of claims 1-8.
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| CN202410369102.4A CN117978104B (en) | 2024-03-28 | 2024-03-28 | Power supply circuit with temperature compensation function and radio frequency amplifier |
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| CN202410369102.4A CN117978104B (en) | 2024-03-28 | 2024-03-28 | Power supply circuit with temperature compensation function and radio frequency amplifier |
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| CN115296623A (en) * | 2022-07-25 | 2022-11-04 | 中国电子科技集团公司第二十九研究所 | Large-current gate control circuit with temperature compensation function and design method thereof |
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| JP3660894B2 (en) * | 2001-06-22 | 2005-06-15 | 日本無線株式会社 | FET bias circuit |
| JP3827541B2 (en) * | 2001-07-03 | 2006-09-27 | シャープ株式会社 | Temperature compensation circuit and communication terminal device including the same |
| CN103312273B (en) * | 2013-06-06 | 2016-12-28 | 三维通信股份有限公司 | A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression |
| CN104713659A (en) * | 2015-02-09 | 2015-06-17 | 中国科学院半导体研究所 | Thermistor resistance linear compensation circuit based on transistor output characteristic |
| CN208924114U (en) * | 2018-11-19 | 2019-05-31 | 上海东软载波微电子有限公司 | A kind of driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115296623A (en) * | 2022-07-25 | 2022-11-04 | 中国电子科技集团公司第二十九研究所 | Large-current gate control circuit with temperature compensation function and design method thereof |
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