CN117978104B - A power supply circuit and radio frequency amplifier with temperature compensation function - Google Patents

Abstract

The application relates to the technical field of radio frequency, in particular to a power supply circuit with a temperature compensation function and a radio frequency amplifier, wherein the power supply circuit comprises a first amplifying module, a temperature-sensitive module, a second amplifying module and a voltage dividing module; the temperature-sensitive module includes: the thermistor is attached to the mos tube, and one end of the thermistor is connected with the power supply voltage through the voltage dividing module, and the other end of the thermistor is grounded; the second amplification module includes: a second resistor; a third resistor; the inverting input end of the first comparator is connected with one end of the thermistor and the output end of the first amplifying module through the second resistor and the third resistor respectively; and a fourth resistor. The power supply circuit can solve the problem that the performance of the mos tube is reduced due to the fact that the mos tube in the radio frequency amplifying circuit heats, and the reliability of the radio frequency amplifying circuit is reduced, and can achieve the effects of ensuring that the performance of the mos tube is good and the reliability of the radio frequency amplifying circuit is high in the working process of the radio frequency amplifying circuit.

Description

A power supply circuit and radio frequency amplifier with temperature compensation function

Technical Field

The present application relates to the field of radio frequency technology, and in particular to a power supply circuit and a radio frequency amplifier with a temperature compensation function.

Background technique

Existing radio frequency amplification circuits usually include MOSFETs. However, the MOSFETs that are always in the on state during the operation of the radio frequency amplification circuit will generate heat, resulting in an increase in the on-resistance of the MOSFETs, thereby reducing the drain-source current of the MOSFETs and reducing the load capacity of the MOSFETs. The heated MOSFETs will also cause the voltage and current between the gate and source of the MOSFETs to decrease, ultimately resulting in a decrease in the performance of the MOSFETs and a decrease in the reliability of the radio frequency amplification circuit.

Therefore, the existing technology needs to be improved and developed.

Summary of the invention

The purpose of the present application is to provide a power supply circuit and a radio frequency amplifier with a temperature compensation function, aiming to solve the problem that the performance of the MOS tube is degraded due to the heating of the MOS tube in the radio frequency amplifier circuit, and the reliability of the radio frequency amplifier circuit is reduced.

In a first aspect, the present application provides a power supply circuit with a temperature compensation function, which is used to power the gate of a MOS tube in a radio frequency amplification circuit, and includes a first amplification module, a temperature-sensitive module, a second amplification module and a voltage divider module;

The input end of the first amplifying module is connected to the supply voltage and is used to output an inverted voltage to the second amplifying module;

The temperature sensitive module includes:

The thermistor is fitted with the MOS tube, one end of which is connected to the supply voltage through the voltage divider module and the other end is grounded;

a first resistor connected in parallel with the thermistor;

The second amplification module includes:

A second resistor;

The third resistor;

A first comparator, whose inverting input terminal is connected to one end of the thermistor and the output end of the first amplifying module through a second resistor and a third resistor respectively, whose non-inverting input terminal is grounded, and whose output terminal is connected to the gate of the MOS tube;

A fourth resistor, the inverting input terminal of the first comparator is connected to the output terminal thereof through the fourth resistor.

The power supply circuit with temperature compensation function provided by the present application is provided with a first amplification module, a second amplification module and a temperature-sensitive module including a thermistor, which can compensate for the voltage between the gate and the source of the MOS tube; and the power supply circuit with temperature compensation function provided by the present application is provided with a thermistor bonded to the MOS tube, and when the temperature of the MOS tube rises, the heat of the MOS tube can be transferred to the thermistor, thereby suppressing the temperature increase of the MOS tube, ensuring that the performance of the MOS tube is good and the reliability of the RF amplifier circuit is high during the operation of the RF amplifier circuit.

Optionally, the first amplification module includes:

A second comparator, an output terminal of which is connected to the inverting input terminal of the first comparator;

a fifth resistor, wherein the inverting input terminal of the second comparator is connected to the supply voltage through the fifth resistor;

a sixth resistor, wherein the inverting input terminal of the second comparator is connected to the output terminal thereof through the sixth resistor;

A seventh resistor, a non-inverting input terminal of the second comparator is grounded through the seventh resistor.

Optionally, the power supply circuit further includes:

The base and collector of the transistor are connected to the output terminal of the first comparator, and the emitter of the transistor is grounded.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a transistor whose base and collector are connected to the output end of the first comparator. When the temperature of the MOS tube rises, the reduced gate current can be compensated by the reduced amount of base current and the reduced amount of collector current, thereby compensating the current between the gate and the source of the MOS tube, and combining the compensation function of the temperature-sensitive module for the voltage between the gate and the source of the MOS tube to minimize the impact of the MOS tube performance due to the increase in temperature.

Optionally, the power supply circuit further includes:

A voltage stabilizing module, the base of the transistor is connected to the output end of the first comparator through the voltage stabilizing module, and the voltage stabilizing module is used to stabilize the voltage of the base of the input transistor.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage stabilizing module between the output end of the first comparator and the base of the transistor, so that when the temperature of the MOS tube rises, the correspondence between the amount of reduction of the collector current, the amount of reduction of the base current and the amount of reduction of the current output by the first comparator can be kept accurate, thereby enabling the correspondence between the amount of reduction of the current input to the gate of the MOS tube and the amount of reduction of the current output by the first comparator to be kept accurate.

Optionally, the voltage stabilizing module includes:

The positive terminal of the voltage zener diode is connected to the base of the transistor, and the negative terminal is connected to the gate of the MOS tube.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage stabilizing module including a voltage stabilizing diode, which can realize voltage stabilization processing of the base voltage of the transistor; and in this embodiment, the number and voltage stabilizing value of the voltage stabilizing diode are set as needed, and the base voltage of the input transistor can be controlled to control the amount of reduction of the base current and the collector current when the temperature of the MOS tube rises, thereby accurately controlling the amount of reduction of the current of the gate of the input MOS tube.

Optionally, the voltage division of the voltage division module is adjustable, and the voltage division module is used to change its voltage division so as to change the voltage input to the inverting input terminal of the first comparator.

Optionally, the voltage divider module includes:

A first sliding rheostat, one end of which is connected to the supply voltage and the other end is grounded;

An eighth resistor, wherein the middle end of the first sliding rheostat is connected to one end of the thermistor through the eighth resistor.

Optionally, the power supply circuit further includes:

The first filter capacitor has a negative terminal connected to the gate of the MOS tube and a positive terminal connected to the ground.

Optionally, the second amplification module further includes:

A ninth resistor, the non-inverting input terminal of the first comparator is grounded through the ninth resistor, and the resistance value of the ninth resistor is the same as the resistance value when the second resistor, the third resistor and the fourth resistor are connected in parallel.

In a second aspect, the present application also provides a radio frequency amplifier, comprising any of the above power supply circuits with a temperature compensation function.

The RF amplifier provided in the present application is provided with a first amplification module, a second amplification module and a temperature-sensitive module including a thermistor, which can compensate for the voltage between the gate and the source of the MOS tube; and the RF amplifier provided in the present application is provided with a thermistor bonded to the MOS tube, and when the temperature of the MOS tube rises, the heat of the MOS tube can be transferred to the thermistor, thereby suppressing the temperature increase of the MOS tube, ensuring that the MOS tube has good performance and the RF amplifier circuit has high reliability during the operation of the RF amplifier circuit.

From the above, it can be seen that the present application provides a power supply circuit and a radio frequency amplifier with a temperature compensation function, wherein the power supply circuit with a temperature compensation function provided by the present application is provided with a first amplification module, a second amplification module and a temperature-sensitive module including a thermistor, which can compensate for the voltage between the gate and the source of the MOS tube; and the power supply circuit with a temperature compensation function provided by the present application is provided with a thermistor bonded to the MOS tube, and when the temperature of the MOS tube rises, the heat of the MOS tube can be transferred to the thermistor, thereby suppressing the temperature increase of the MOS tube, ensuring that the MOS tube has good performance and the RF amplifier circuit has high reliability during the operation of the RF amplifier circuit.

Other features and advantages of the present application will be described in the following description, and partly become apparent from the description, or be understood by practicing the present application. The purpose and other advantages of the present application can be realized and obtained by the structures specifically pointed out in the written description and the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a circuit diagram of a power supply circuit with a temperature compensation function provided in an embodiment of the present application.

FIG. 2 is a circuit diagram of a first amplification module provided in an embodiment of the present application.

FIG3 is a circuit diagram of a temperature-sensitive module provided in an embodiment of the present application.

FIG. 4 is a circuit diagram of a second amplification module provided in an embodiment of the present application.

FIG. 5 is a circuit diagram of a voltage stabilizing module provided in an embodiment of the present application.

FIG. 6 is a circuit diagram of a voltage divider module provided in an embodiment of the present application.

FIG. 7 is a test circuit for determining the relationship between the voltage and current between the gate and source of a MOS tube and the temperature, provided in an embodiment of the present application.

Explanation of reference numerals: A1, first comparator; A2, second comparator; C1, first filter capacitor; C2, second filter capacitor; D, voltage stabilizing diode; M, MOS tube; NTC, thermistor; P1, first sliding rheostat; P2, second sliding rheostat; Q, triode; R1, first resistor; R2, second resistor; R3, third resistor; R4, fourth resistor; R5, fifth resistor; R6, sixth resistor; R7, seventh resistor; R8, eighth resistor; R9, ninth resistor; R10, tenth resistor; VDC, power supply voltage; _Vo1 , first output voltage; _Vo2 , second output voltage; _Vo3 , third output voltage; _V1 , first input voltage; 1, first amplifying module; 2, temperature-sensitive module; 3, second amplifying module; 4, voltage stabilizing module; 5, voltage divider module.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

For MOS tube M, the relationship between carrier mobility and temperature in the inversion layer is approximately μ∝T ^3/(-2) , where μ is carrier mobility and T is temperature, that is, as the temperature of MOS tube M increases, the carrier mobility in the inversion layer decreases; and because the on-resistance of MOS tube M increases with the decrease of carrier mobility, and when the drain-source voltage remains unchanged, the drain-source current of MOS tube M decreases with the increase of its on-resistance, the load capacity of MOS tube M decreases with the increase of its on-resistance and the decrease of drain-source current, so the load capacity of MOS tube M decreases with the increase of its on-resistance.

Secondly, for MOS tube M, the formula of conductivity factor is: k ₁ =k ₁ 'W/L, where k ₁ is the conductivity factor, k ₁ ' is the intrinsic conductivity factor, W is the channel width, and L is the channel length. The formula of k ₁ ' is: k ₁ '=με _OX /2t _OX , where ε _OX is the dielectric constant of the oxide layer, and t _OX is the thickness of the oxide layer between the gate region and the channel. Among the above parameters, the parameters other than μ can be ignored due to the influence of temperature. From the above, it can be seen that μ decreases with the increase of the temperature of MOS tube M, and it can be seen that the conductivity factor also decreases with the increase of the temperature of MOS tube M. Therefore, the channel conductivity of MOS tube M weakens with the increase of the temperature of MOS tube M.

In addition, for the MOS tube M, the formula for its threshold voltage is: V _T =φ _ma +2φ _F -Q _OX /C _OX -Q _b /C _OX , where V _T is the threshold voltage of the MOS tube M, φ _ma is the contact potential difference between the polysilicon gate and the silicon substrate, φ _F is the Fermi potential, Q _OX is the positive charge per unit area of the oxide layer, Q _b is the charge density of the depletion region, C _OX is the gate oxide capacitance per unit area, and the parameters that have obvious changes when the temperature changes are φ _F and Q _b , and the influence of temperature on other parameters can be ignored, and the formula for φ _F is: φ _F =kT/q*ln（N _A /n _i ）, where k is the Boltzmann constant, q is the charge amount, N _A is the doping concentration of the substrate, n _i is the intrinsic carrier concentration, and the formula for n _i is: n _i =3.9*10 ¹⁶ *T ^3/2 *exp（-E _g /2kT）, where exp is a natural constant, E _g is the bandgap width, so φ _F decreases as the temperature of MOS tube M increases; the formula of Q _b is: Q _b =-sqrt (4qε _S N _A φ _F ), where sqrt is the square root, ε _S is the dielectric constant of the silicon surface, so Q _b decreases as φ _F decreases, and then decreases as the temperature of MOS tube M increases; therefore, the threshold voltage of MOS tube M decreases as the temperature increases, and the threshold voltage of MOS tube M is the voltage between the gate and the source when MOS tube M is turned on, so the voltage between the gate and the source of MOS tube M also decreases as the temperature increases. Therefore, as the temperature of MOS tube M rises, its load capacity decreases, the channel conductivity decreases, the voltage between the gate and the source also decreases as the temperature increases, and the performance of MOS tube M decreases.

As shown in FIG. 7 , FIG. 7 is a test circuit for determining the relationship between the voltage and current between the gate and source of the MOS tube M and the temperature, and the test circuit includes:

The second sliding resistor P2 has one end connected to the power supply voltage VDC, the other end connected to the ground, and the middle end connected to the gate of the MOSFET M.

In the first test, the test circuit is operated, and when the temperature of the mos M rises, the voltage and current between its gate and source are measured to decrease; in the second test, the test circuit is stopped and the temperature of the mos M is returned to the starting temperature, the position of the middle end of the second sliding rheostat P2 is moved to reduce the resistance of the part connected in series with the mos M, and the test circuit is restarted. When the temperature of the mos M rises to the same temperature as that in the first test, the voltage and current between its gate and source are measured to decrease compared with the first test. During the second test, the voltage division of the part of the second sliding rheostat P2 connected in series with the mos M is reduced, so that the voltage of the input mos M gate increases. Therefore, when the temperature of the mos M rises, the voltage and current between its gate and source decrease, and increasing the voltage of the input mos M gate can compensate for the reduced voltage between the mos M gate and source.

In the first aspect, as shown in FIG. 1 , FIG. 3 and FIG. 4 , the present application provides a power supply circuit with a temperature compensation function, which is used to power the gate of a MOS tube M in a radio frequency amplifier circuit, and includes a first amplifier module 1, a temperature-sensitive module 2, a second amplifier module 3 and a voltage divider module 5;

The input end of the first amplifying module 1 is connected to the power supply voltage VDC, and is used to output an inverted voltage to the second amplifying module 3;

The temperature sensitive module 2 includes:

The thermistor NTC is fitted with the mos tube M, one end of which is connected to the supply voltage VDC through the voltage divider module 5, and the other end is grounded;

A first resistor R1 is connected in parallel with the thermistor NTC;

The second amplification module 3 includes:

A second resistor R2;

A third resistor R3;

A first comparator A1, whose inverting input terminal is connected to one end of the thermistor NTC and the output end of the first amplifying module 1 through a second resistor R2 and a third resistor R3 respectively, whose non-inverting input terminal is grounded, and whose output terminal is connected to the gate of the MOS tube M;

Fourth resistor R4: The inverting input terminal of the first comparator A1 is connected to the output terminal thereof through the fourth resistor R4.

Specifically, when the power supply circuit is working, the power supply voltage VDC supplies power to the first amplifier module 1, and the voltage input to the first amplifier module ₁ is recorded as the first input voltage V1. The first amplifier module 1 amplifies and inverts the first input voltage _V1 and outputs an inverted voltage to the inverting input terminal of the first comparator A1, and the inverted voltage is recorded as the first output voltage _V01 . The power supply voltage VDC is connected to the thermistor NTC through the voltage divider module 5. Since the inverting input terminal of the first comparator A1 is connected to the thermistor NTC through the second resistor R2, the voltage input to the thermistor NTC by the power supply voltage VDC through the voltage divider module 5 is the same as the voltage input to the inverting input terminal of the first comparator A1 by the power supply voltage VDC through the voltage divider module 5. The voltage is recorded as the second output voltage _V02 . Since the inverting input terminal of the first comparator A1 is connected to its output terminal through the fourth resistor R4, the first comparator A1 amplifies and inverts the first output voltage _V01 and the second output voltage _V02 , and outputs the voltage to the gate of the MOSFET M. The voltage is recorded as the third output voltage V _o3 . Wherein, V _o1 =-αV ₁ , α is the multiple of the voltage V ₁ input to the first amplifying module 1 amplified by the first amplifying module 1, V _o3 =-[V _o1 *(R ₄ /R ₃ )+ V _o2 *(R ₄ /R ₂ )], that is, V _o3 =αV ₁ *(R ₄ /R ₃ )- V _o2 *(R ₄ /R ₂ ), wherein R ₄ is the resistance value of the fourth resistor R4, R ₃ is the resistance value of the third resistor R3, and R ₂ is the resistance value of the second resistor R2. In this formula, V _o1 makes the coefficient of a monomial of the expression of V _o3 positive, which is used to cooperate with V _o2 to characterize V _o3 . V _o2 is regulated based on the thermistor NTC, and its value is negatively correlated with temperature, which is used to cooperate with V _o1 to compensate for V _o3 . Therefore, the power supply circuit can supply power to the gate of the MOS tube M in the radio frequency amplifying circuit.

More specifically, the temperature coefficient of the thermistor NTC is determined based on the characteristics of the voltage between the gate and source of the MOS tube M with respect to temperature changes.

More specifically, when the temperature of the MOS tube M rises, the temperature of the thermistor NTC in contact with it also rises, the resistance of the thermistor NTC decreases, the value of the voltage input to the thermistor NTC decreases, and since the inverting input terminal of the first comparator A1 is connected to one end of the thermistor NTC through the second resistor R2, the value of the second output voltage V _o2 also decreases, while the value of the first output voltage V _o1 remains unchanged, and then the value of V _o3 increases, that is, the value of the voltage input to the gate of the MOS tube M increases, so that when the temperature of the MOS tube M increases and the voltage between the gate and the source of the MOS tube M decreases, the voltage between the gate and the source of the MOS tube M can be compensated. In addition, since the MOS tube M is attached to the thermistor NTC, when the temperature of the MOS tube M increases, the heat of the MOS tube M will be transferred to the thermistor NTC, thereby inhibiting the temperature increase of the MOS tube M.

More specifically, if only the temperature-sensitive module 2 and the second amplifying module 3 are provided, the second amplifying module 3 can only output a negative voltage to the gate of the MOSFET M. The embodiment of the present application provides the first amplifying module 1, the temperature-sensitive module 2 and the second amplifying module 3, which can input a positive voltage and a negative voltage to the inverting input terminal of the first comparator A1, and then determine the positive or negative voltage output by the first comparator A1 to the gate of the MOSFET M by regulating the values of the positive voltage and the negative voltage.

The power supply circuit with temperature compensation function provided by the present application is provided with a first amplification module 1, a second amplification module 3 and a temperature-sensitive module 2 including a thermistor NTC, which can compensate for the voltage between the gate and the source of the MOSFET M; and the power supply circuit with temperature compensation function provided by the present application is provided with a thermistor NTC bonded to the MOSFET M, and when the temperature of the MOSFET M rises, the heat of the MOSFET M can be transferred to the thermistor NTC, thereby suppressing the temperature increase of the MOSFET M, ensuring that the performance of the MOSFET M is good and the reliability of the RF amplifier circuit is high during the operation of the RF amplifier circuit.

Preferably, the power supply circuit further includes:

The tenth resistor R10, the output end of the first comparator A1 is connected to the gate of the MOSFET M through the tenth resistor R10.

As shown in FIG. 2 , in some preferred embodiments, the first amplification module 1 includes:

A second comparator A2, an output terminal of which is connected to an inverting input terminal of the first comparator A1;

A fifth resistor R5, an inverting input terminal of the second comparator A2 is connected to the power supply voltage VDC through the fifth resistor R5;

A sixth resistor R6, the inverting input terminal of the second comparator A2 is connected to its output terminal through the sixth resistor R6;

Seventh resistor R7, the non-inverting input terminal of the second comparator A2 is grounded through the seventh resistor R7.

Specifically, since the non-inverting input terminal of the second comparator A2 is grounded through the seventh resistor R7, the voltage _V1 input to the first amplification module 1 can be amplified and inverted. At this time, α=R6/R5, where _R6 is the resistance value of the sixth resistor R6, and _R5 is the resistance value of the fifth resistor R5.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a first amplifying module 1 including a second comparator A2, which can amplify and invert the voltage _V1 input to the first amplifying module 1.

Preferably, the fifth resistor R5 and the sixth resistor R6 have the same resistance value, in which case the value of α is 1, and V _o1 =− V ₁ .

In some preferred embodiments, the power supply circuit further comprises:

The transistor Q has a base and a collector connected to the output terminal of the first comparator A1, and an emitter grounded.

Specifically, when the power supply circuit is working, the current outputted by the output terminal of the first comparator A1 is inputted into the gate of the MOSFET M, the base of the transistor Q and the collector of the transistor Q. The transistor Q and the MOSFET M are regarded as a module. After the power supply circuit has been working for a period of time, the temperature of the MOSFET M rises and the impedance increases, so the resistance of the module increases, and the current inputted into the module decreases, which is recorded as ΔI ₁ ; for the transistor Q, the base current is proportional to the collector current, and the ratio of the collector current to the base current is the magnification of the transistor Q, so when the current inputted into the module decreases, the base current decreases, the collector current also decreases, and the ratio of the amount of the collector current reduction to the amount of the base current reduction is the magnification of the transistor Q, the amount of the collector current reduction is recorded as ΔI _C , the amount of the base current reduction is recorded as ΔI _B , and the amount of the current inputted into the gate of the MOSFET M at this time is recorded as ΔI _G . In the embodiment where the transistor Q is not provided and the current output from the output end of the first comparator A1 is directly input into the gate of the MOSFET M, the amount of the current input into the gate of the MOSFET M at this time is recorded as ΔI ₂ , then ΔI ₁ =ΔI ₂ =ΔI _C +ΔI _B +ΔI _G . Compared with the embodiment where the transistor Q is not provided, this embodiment can compensate for the reduced gate current by the amount of the base current reduction and the amount of the collector current reduction when the temperature of the MOSFET M rises, thereby compensating for the current between the gate and the source of the MOSFET M, and combining the compensation function of the temperature-sensitive module 2 for the voltage between the gate and the source of the MOSFET M to minimize the influence of the MOSFET M performance due to the temperature increase.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a transistor Q whose base and collector are connected to the output end of the first comparator A1. When the temperature of the MOS tube M rises, the reduced gate current can be compensated by the reduced amount of base current and the reduced amount of collector current, thereby compensating the current between the gate and the source of the MOS tube M, and combining the compensation function of the temperature sensitive module 2 for the voltage between the gate and the source of the MOS tube M to minimize the impact of the performance of the MOS tube M due to the increase in temperature.

In some preferred embodiments, the power supply circuit further comprises:

The voltage stabilizing module 4 , the base of the transistor Q is connected to the output end of the first comparator A1 through the voltage stabilizing module 4 , and the voltage stabilizing module 4 is used to stabilize the voltage of the base of the input transistor Q.

Specifically, the voltage stabilizing module 4 can be an existing circuit structure with a voltage stabilizing function. Since the voltage stabilizing module 4 performs voltage stabilization processing on the base voltage of the input transistor Q, the present embodiment can avoid the base current from changing due to the instability of the base voltage, and keep the corresponding relationship between the amount of base current reduction and the amount of current reduction output by the first comparator A1 accurate when the temperature of the MOSFET M rises; and since the collector current is proportional to the base current, the present embodiment can keep the corresponding relationship between the amount of collector current reduction, the amount of base current reduction, and the amount of current reduction output by the first comparator A1 accurate when the temperature of the MOSFET M rises, so that the amount of current reduction of the gate of the input MOSFET M can be accurately controlled.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage stabilizing module 4 between the output end of the first comparator A1 and the base of the transistor Q, so that when the temperature of the MOS tube M rises, the correspondence between the amount of reduction of the collector current, the amount of reduction of the base current and the amount of reduction of the current output by the first comparator A1 can be kept accurate, thereby keeping the correspondence between the amount of reduction of the current input to the gate of the MOS tube M and the amount of reduction of the current output by the first comparator A1 accurate.

As shown in FIG5 , in some preferred embodiments, the voltage stabilizing module 4 includes:

The positive terminal of the voltage stabilizing diode D is connected to the base of the transistor Q, and the negative terminal of the voltage stabilizing diode D is connected to the gate of the MOSFET M.

Specifically, the number and voltage stabilization value of the voltage stabilizing diodes D can be set as required.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage stabilizing module 4 including a voltage stabilizing diode D, which can realize voltage stabilization processing of the base voltage of the transistor Q; and in this embodiment, the number and voltage stabilizing value of the voltage stabilizing diode D are set as needed, and the base voltage of the input transistor Q can be controlled to control the amount of reduction of the base current and the collector current when the temperature of the MOS tube M rises, thereby accurately controlling the amount of reduction of the current of the gate of the input MOS tube M.

In some preferred embodiments, the voltage division of the voltage division module 5 is adjustable, and the voltage division module 5 is used to change its voltage division to change the voltage input to the inverting input terminal of the first comparator A1.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage dividing module 5 with adjustable voltage division, which can adjust the voltage division of the voltage dividing module 5 to adjust the voltage input to the inverting input terminal of the first comparator A1, so as to accurately control the voltage input to the gate of the MOS tube M from the output terminal of the first comparator A1, and then cooperate with the temperature sensitive module 2 to accurately compensate the voltage between the gate and the source of the MOS tube M.

As shown in FIG6 , in some preferred embodiments, the voltage dividing module 5 includes:

A first sliding resistor P1, one end of which is connected to the power supply voltage VDC, and the other end is grounded;

The eighth resistor R8, the middle end of the first sliding rheostat P1 is connected to one end of the thermistor NTC through the eighth resistor R8.

Specifically, the voltage divider module 5 can be a circuit structure that can change its own voltage division, such as a circuit having a switching tube and multiple resistors. In this embodiment, the voltage divider module 5 includes a first sliding rheostat P1 and an eighth resistor R8. This embodiment changes the overall resistance value of the voltage divider module 5 by adjusting the position of the middle end of the first sliding rheostat P1, thereby changing its voltage division.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a voltage divider module 5 including a first sliding rheostat P1 and an eighth resistor R8, which can adjust the voltage division of the voltage divider module 5 to adjust the voltage input to the inverting input terminal of the first comparator A1.

In some preferred embodiments, the power supply circuit further comprises:

The first filter capacitor C1 has a negative terminal connected to the gate of the MOSFET M, and a positive terminal connected to the ground.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a first filter capacitor C1, which can keep the voltage of the gate of the input MOS tube M stable when the power supply circuit is working.

Preferably, the power supply circuit further includes:

The second filter capacitor C2 has a negative terminal connected to the inverting input terminal of the first comparator A1 and a positive terminal grounded.

In this embodiment, the power supply circuit with temperature compensation function of the present application is provided with a second filter capacitor C2, which can keep the voltage input to the inverting input terminal of the first comparator A1 stable when the power supply circuit is working.

In some preferred embodiments, the second amplification module 3 further includes:

A ninth resistor R9, a non-inverting input terminal of the first comparator A1 is grounded through the ninth resistor R9, and a resistance value of the ninth resistor R9 is the same as a resistance value when the second resistor R2, the third resistor R3 and the fourth resistor R4 are connected in parallel.

In this embodiment, the power supply circuit with temperature compensation function of the present application makes the resistance value of the ninth resistor R9 the same as the resistance value when the second resistor R2, the third resistor R3 and the fourth resistor R4 are connected in parallel, and can make the equivalent resistance value of the resistor connected to the in-phase input terminal of the first comparator A1 and the resistor connected to the inverting input terminal of the first comparator A1 the same, thereby avoiding the bias current from forming a static input voltage on the resistor and causing errors.

In a second aspect, the present application also provides a radio frequency amplifier, comprising any of the above power supply circuits with a temperature compensation function.

The radio frequency amplifier provided in the present application is provided with a first amplification module 1, a second amplification module 3 and a temperature-sensitive module 2 including a thermistor NTC, which can compensate for the voltage between the gate and the source of the MOSFET M; and the radio frequency amplifier provided in the present application is provided with the thermistor NTC bonded to the MOSFET M, and when the temperature of the MOSFET M rises, the heat of the MOSFET M can be transferred to the thermistor NTC, thereby suppressing the temperature increase of the MOSFET M, ensuring that the performance of the MOSFET M is good and the reliability of the RF amplifier circuit is high during the operation of the RF amplifier circuit.

As can be seen from the above, the present application provides a power supply circuit and a radio frequency amplifier with a temperature compensation function, wherein the power supply circuit with a temperature compensation function provided by the present application is provided with a first amplification module 1, a second amplification module 3 and a temperature-sensitive module 2 including a thermistor NTC, which can compensate for the voltage between the gate and the source of the MOS tube M; and the power supply circuit with a temperature compensation function provided by the present application is provided with a thermistor NTC bonded to the MOS tube M, and when the temperature of the MOS tube M rises, the heat of the MOS tube M can be transferred to the thermistor NTC, thereby suppressing the temperature increase of the MOS tube M, ensuring that the performance of the MOS tube M is good and the reliability of the RF amplifier circuit is high during the operation of the RF amplifier circuit.

In the embodiments provided in the present application, it should be understood that, herein, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

The above are only embodiments of the present application and are not intended to limit the scope of protection of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of protection of the present application.

Claims (9)

1. The power supply circuit with the temperature compensation function is used for supplying power to the grid electrode of a mos tube in the radio frequency amplifying circuit and is characterized by comprising a first amplifying module (1), a temperature sensitive module (2), a second amplifying module (3) and a voltage dividing module (5);

The input end of the first amplifying module (1) is connected with a power supply voltage and is used for outputting an inverted voltage to the second amplifying module (3);

The temperature-sensitive module (2) comprises:

one end of the thermistor is connected with the power supply voltage through the voltage dividing module (5), and the other end of the thermistor is grounded;

a first resistor connected in parallel with the thermistor;

The second amplification module (3) comprises:

A second resistor;

A third resistor;

the inverting input end of the first comparator is connected with one end of the thermistor and the output end of the first amplifying module (1) through the second resistor and the third resistor respectively, the non-inverting input end of the first comparator is grounded, and the output end of the first comparator is connected with the grid electrode of the mos tube;

The inverting input end of the first comparator is connected with the output end of the first comparator through the fourth resistor;

the first amplification module (1) comprises:

The output end of the second comparator is connected with the inverting input end of the first comparator;

The inverting input end of the second comparator is connected with the power supply voltage through the fifth resistor;

the inverting input end of the second comparator is connected with the output end of the second comparator through the sixth resistor;

and the non-inverting input end of the second comparator is grounded through the seventh resistor.

2. The power supply circuit with temperature compensation function according to claim 1, further comprising:

And the base electrode and the collector electrode of the triode are connected with the output end of the first comparator, and the emitter electrode of the triode is grounded.

3. A power supply circuit with temperature compensation function according to claim 2, characterized in that the power supply circuit further comprises:

The base electrode of the triode is connected with the output end of the first comparator through the voltage stabilizing module (4), and the voltage stabilizing module (4) is used for stabilizing the voltage input into the base electrode of the triode.

4. A power supply circuit with temperature compensation function according to claim 3, characterized in that the voltage stabilizing module (4) comprises:

and the positive terminal of the voltage stabilizing diode is connected with the base electrode of the triode, and the negative terminal of the voltage stabilizing diode is connected with the grid electrode of the mos tube.

5. A power supply circuit with temperature compensation function according to claim 1, characterized in that the voltage division of the voltage division module (5) is adjustable, the voltage division module (5) being adapted to vary its voltage division to vary the voltage input to the inverting input of the first comparator.

6. A power supply circuit with temperature compensation function according to claim 5, characterized in that the voltage dividing module (5) comprises:

one end of the first sliding rheostat is connected with the power supply voltage, and the other end of the first sliding rheostat is grounded;

and the middle end of the first sliding rheostat is connected with one end of the thermistor through the eighth resistor.

7. The power supply circuit with temperature compensation function according to claim 1, further comprising:

and the negative electrode end of the first filter capacitor is connected with the grid electrode of the mos tube, and the positive electrode of the first filter capacitor is grounded.

8. A power supply circuit with temperature compensation function according to claim 1, characterized in that the second amplification module (3) further comprises:

and the non-inverting input end of the first comparator is grounded through the ninth resistor, and the resistance value of the ninth resistor is the same as that of the second resistor, the third resistor and the fourth resistor which are connected in parallel.

9. A radio frequency amplifier comprising a supply circuit with temperature compensation according to any of claims 1-8.