CN103312273B - A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression - Google Patents
A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression Download PDFInfo
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- CN103312273B CN103312273B CN201310225116.0A CN201310225116A CN103312273B CN 103312273 B CN103312273 B CN 103312273B CN 201310225116 A CN201310225116 A CN 201310225116A CN 103312273 B CN103312273 B CN 103312273B
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Abstract
The present invention relates to the circuit arrangement of a kind of LDMOS power amplifier temperature effect suppression, power module passes through current-limiting resistance R0 and audion T1, T2, it is connected with divider resistance R and NTC resistance R3, connect with the pin 1 of LDMOS power amplifier the most together, pin 2 ground connection of LDMOS power amplifier, pin 3 is RF output end, and power module connects with microcontroller.The invention have the advantages that: present configuration is by combining temperature characterisitic and the NTC thermistor of audion, the temperature effects of LDMOS pipe is realized good inhibiting effect, characteristic for existing LDMOS pipe, there is provided a kind of have temperature-compensating mechanism, high-power RF LDMOS amplifier can be made to maintain stablizing of its static working current at different temperatures, reach the purpose of firm power output.
Description
Technical field
The present invention is the temperature effects restraining device of the radio frequency LDMOS power amplifier being applied in wireless communication technology, relates to especially
And to the stable output power of high-power power amplifier using radio frequency LDMOS device in the communication system of WCDMA, CDMA standard
There is the circuit arrangement that the LDMOS power amplifier temperature effect of bigger effect suppresses.
Background technology
LDMOS pipe is the modified model N-channel MOS FET aiming at radio-frequency (RF) power amplification Amplifier Design, is often operated in AB class, in operating point
Near there is positive temperature characterisitic, i.e. under certain grid voltage, when an operation temperature increases, its quiescent current IDQRaise；Work as work
When making temperature reduction, IDQReduce.Usually, when LDMOS pipe heat sink temperature is in time being increased to 100 DEG C for 20 DEG C, its static work
Electric current IDQChange 140%；When temperature is reduced to 0 DEG C, variable quantity also has 30%.IDQChange can affect the gain of system, effect
Rate and the index such as linear, maximum with linear effect the most again.Therefore, maintain power tube IDQ stable at work, be power board
One of key point of design.
Summary of the invention
The shortcoming that the invention solves the problems that above-mentioned prior art, it is provided that one has temperature-compensating mechanism, maintains it quiet under different temperatures
Stablizing of state operating current, reaches the circuit arrangement of the LDMOS power amplifier temperature effect suppression of firm power output.
The present invention solves the technical scheme that its technical problem uses: the circuit of this LDMOS power amplifier temperature effect suppression fills
Put, mainly include microcontroller, power module, current-limiting resistance R0, audion T1, T2, divider resistance R, NTC electricity
Resistance R3 and LDMOS power amplifier, power module passes through current-limiting resistance R0 and audion T1, T2, with divider resistance R and NTC
Resistance R3 is connected, then connects with the pin 1 of LDMOS power amplifier together, pin 2 ground connection of LDMOS power amplifier,
Pin 3 is RF output end, and power module connects with microcontroller.
Connect between described current-limiting resistance R0 and the ground level of audion T1, T2 and have divider resistance R1, R2.
The grounded emitter of described audion T1, T2.
The pin 1 of described LDMOS power amplifier is radio-frequency (RF) signal input end, and radiofrequency signal passes through electric capacity C from LDMOS merit
The pin 1 of rate amplifier inputs.
The invention have the advantages that: present configuration is by combining temperature characterisitic and the NTC of audion
(Negative Temperature Coefficient negative temperature coefficient) critesistor, real to the temperature effects of LDMOS pipe
Existing good inhibiting effect, for the characteristic of existing LDMOS pipe, it is provided that a kind of that have temperature-compensating mechanism, can make high-power
Radio frequency LDMOS amplifier maintains stablizing of its static working current at different temperatures, reaches the purpose of firm power output.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings:
As it can be seen, this LDMOS power amplifier temperature effect suppression circuit arrangement, mainly include microcontroller,
Power module, current-limiting resistance R0, audion T1, T2, divider resistance R, NTC resistance R3 and LDMOS power amplifier, electricity
Source module pass through current-limiting resistance R0 and audion T1, T2, be connected with divider resistance R and NTC resistance R3, more together with LDMOS
The pin 1(grid of power amplifier) connection, connect between the ground level of current-limiting resistance R0 and audion T1, T2 and have dividing potential drop electricity
Resistance R1, R2, the grounded emitter of audion T1, T2.The pin 2(source electrode of LDMOS power amplifier) ground connection, pin 3
(drain electrode) is RF output end, and power module connects with microcontroller, microcontroller control power module defeated
Going out a suitable voltage (determining according to the output of LDMOS power amplifier), the pin 1 of LDMOS power amplifier is
Radio-frequency (RF) signal input end, radiofrequency signal is inputted from the pin 1 of LDMOS power amplifier by electric capacity C.LDMOS power amplification
The positive temperature characterisitic of device is offset by the negative temperature characteristic of NTC resistance R3, finally achieves the volume stable output power of power tube.
Circuit pins down the collector current of audion T2 by audion T1, and temperature raises, and makes the UBE electricity of audion T2
Buckling is little, and the collector current of audion T2 increases, and audion T2 colelctor electrode voltage over the ground raises, at this moment, also due to
Temperature raises and the UBE voltage of audion T1 is also diminished, and thus weakens the increase of audion T2 base current, from
And inhibiting the increase of audion T2 collector current so that audion T2 colelctor electrode voltage-to-ground keeps one with the rising of temperature
Fixed stablizes.To pin down the effect of audion T2 identical for audion T1 when the temperature decreases, from regardless of being that temperature raises or fall
Low audion T2 colelctor electrode voltage over the ground is held under certain steady state value.And the voltage of audion T2 colelctor electrode is keeping
While constant, the LDMOS power amplifier grid supply voltage that NTC resistance R3 and divider resistance R1, R2 form is but
In change in order, the resistance of NTC resistance R3 can diminish when the temperature increases, so that be added to the voltage meeting of grid on the whole
Diminish, resisted the factor that the electric current making LDMOS power amplifier drain owing to temperature raises increases.When the temperature decreases
Principle is identical, finally makes the grid voltage of LDMOS power amplifier also be achieved that relative " negative temperature characteristic ", finally ensure that
The stable output power of LDMOS power amplifier.
The present invention utilizes the temperature characterisitic of audion itself to condition each other and realizes the temperature of LDMOS power amplifier grid power supply
Degree stability of characteristics, thus provide a Voltage Reference accurately for the negative temperature characteristic of NTC resistance R3, and NTC resistance
The negative temperature characteristic of R3 passes through cancelling out each other of temperature characterisitic positive with LDMOS power amplifier of circuit realiration, finally achieves
Effectively suppress the temperature effects of power tube.
In addition to the implementation, the present invention can also have other embodiments.The skill that all employing equivalents or equivalent transformation are formed
Art scheme, all falls within the protection domain of application claims.
Claims (3)
1. the circuit arrangement of a LDMOS power amplifier temperature effect suppression, mainly include microcontroller, power module, current-limiting resistance R0, audion T1, T2, divider resistance R, NTC resistance R3 and LDMOS power amplifier, it is characterized in that: power module passes through current-limiting resistance R0 and audion T1, T2, it is connected with divider resistance R and NTC resistance R3, connect with the pin 1 of LDMOS power amplifier the most together, pin 2 ground connection of LDMOS power amplifier, pin 3 is RF output end, and power module connects with microcontroller；Circuit pins down the collector current of audion T2 by audion T1, temperature raises, the UBE voltage making audion T2 diminishes, the collector current of audion T2 increases, audion T2 colelctor electrode voltage over the ground raises, at this moment, also due to temperature raises, the UBE voltage of audion T1 is also diminished, thus weaken the increase of audion T2 base current, thus inhibiting the increase of audion T2 collector current so that audion T2 colelctor electrode voltage-to-ground keeps certain stablizing with raising of temperature；To pin down the effect of audion T2 identical for audion T1 when the temperature decreases, from regardless of being that temperature raises or reduces audion T2 colelctor electrode voltage over the ground and is held at certain steady state value；Connect between described current-limiting resistance R0 and the ground level of audion T1, T2 and have divider resistance R1, R2, audion T2 colelctor electrode voltage keep constant while, NTC resistance R3 is changing in order with the LDMOS power amplifier grid supply voltage of divider resistance R1, R2 composition, the resistance of NTC resistance R3 can diminish when the temperature increases, so that the voltage being added to grid on the whole can diminish, resist the factor that the electric current making LDMOS power amplifier drain owing to temperature raises increases.
The circuit arrangement of LDMOS power amplifier temperature effect the most according to claim 1 suppression, is characterized in that: the grounded emitter of described audion T1, T2.
The circuit arrangement of LDMOS power amplifier temperature effect the most according to claim 1 suppression, is characterized in that: the pin 1 of described LDMOS power amplifier is radio-frequency (RF) signal input end, and radiofrequency signal is inputted from the pin 1 of LDMOS power amplifier by electric capacity C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310225116.0A CN103312273B (en) | 2013-06-06 | 2013-06-06 | A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310225116.0A CN103312273B (en) | 2013-06-06 | 2013-06-06 | A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103312273A CN103312273A (en) | 2013-09-18 |
| CN103312273B true CN103312273B (en) | 2016-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310225116.0A Active CN103312273B (en) | 2013-06-06 | 2013-06-06 | A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106911308B (en) * | 2015-12-23 | 2019-04-05 | 中国科学院深圳先进技术研究院 | Power amplifier and its temperature-compensation method applied to HIFU equipment |
| CN117978104B (en) * | 2024-03-28 | 2024-07-16 | 季华实验室 | Power supply circuit with temperature compensation function and radio frequency amplifier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417566A (en) * | 2001-11-07 | 2003-05-14 | 北京莱姆电子有限公司 | Temperature compensation circuit |
| CN2886917Y (en) * | 2005-12-07 | 2007-04-04 | 华为技术有限公司 | Temperature compensation circuit |
| CN101299595A (en) * | 2008-06-24 | 2008-11-05 | 芯通科技（成都）有限公司 | Method and apparatus system for compensating temperature of power amplifier |
| CN201467117U (en) * | 2009-07-24 | 2010-05-12 | 中兴通讯股份有限公司 | Temperature compensation device and mobile communication terminal |
| CN102638230A (en) * | 2011-02-10 | 2012-08-15 | 启碁科技股份有限公司 | Temperature compensation device and satellite signal receiving system |
-
2013
- 2013-06-06 CN CN201310225116.0A patent/CN103312273B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417566A (en) * | 2001-11-07 | 2003-05-14 | 北京莱姆电子有限公司 | Temperature compensation circuit |
| CN2886917Y (en) * | 2005-12-07 | 2007-04-04 | 华为技术有限公司 | Temperature compensation circuit |
| CN101299595A (en) * | 2008-06-24 | 2008-11-05 | 芯通科技（成都）有限公司 | Method and apparatus system for compensating temperature of power amplifier |
| CN201467117U (en) * | 2009-07-24 | 2010-05-12 | 中兴通讯股份有限公司 | Temperature compensation device and mobile communication terminal |
| CN102638230A (en) * | 2011-02-10 | 2012-08-15 | 启碁科技股份有限公司 | Temperature compensation device and satellite signal receiving system |
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| Publication number | Publication date |
|---|---|
| CN103312273A (en) | 2013-09-18 |
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