CN117976584B - Semiconductor groove etching method - Google Patents
Semiconductor groove etching method Download PDFInfo
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- CN117976584B CN117976584B CN202410382190.1A CN202410382190A CN117976584B CN 117976584 B CN117976584 B CN 117976584B CN 202410382190 A CN202410382190 A CN 202410382190A CN 117976584 B CN117976584 B CN 117976584B
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- 238000005530 etching Methods 0.000 title claims abstract description 149
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- 238000003860 storage Methods 0.000 claims abstract description 52
- 238000001039 wet etching Methods 0.000 claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 19
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Abstract
The invention discloses a semiconductor trench etching method, which relates to the technical field of semiconductors and comprises a wet etching device main body, wherein the top of the wet etching device main body is fixedly connected with a gas storage bin, the bottom of the inner wall of the wet etching device main body is fixedly connected with an etching table, the left side of the top of the etching table is fixedly connected with a semiconductor transmission table, the rear side of the top of the etching table is fixedly connected with a liquid level controller, when etching is required, firstly, proportioned etching liquid is poured into the etching liquid storage tank, then flows into the etching tank through a water pipe, and simultaneously starts a double-shaft motor to drive a water level limiting block sliding shaft and a water level limiting block to move downwards or upwards so as to drive the water level limiting blocks at two sides to the highest limit and the lowest limit, thereby controlling the etching liquid in the etching tank, cleaning water is stored in the cleaning tank, and solving the problem that the excessive liquid level can cause the etchant to overflow the etching tank in the etching process and the surrounding materials can be corroded.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor groove etching method.
Background
Semiconductors (semiconductors) refer to materials having electrical conductivity between that of a conductor and an insulator at normal temperature, and are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high power conversion, etc., for example, diodes are devices fabricated using semiconductors, which are of great importance from a technological or economic point of view. Most electronic products, such as computers, mobile phones or digital recorders, have very close association with semiconductors, and common semiconductor materials include silicon, germanium, gallium arsenide, etc., silicon is one of the most influencing types of semiconductor materials used, and silicon carbide (SiC) is a third generation compound semiconductor material, and silicon carbide has excellent physical properties: gao Jindai width (corresponding to high breakdown electric field and high power density), high electric conductivity and high thermal conductivity are basic materials for manufacturing semiconductor chips. The following problems exist in the prior art:
The method for etching the semiconductor groove is divided into wet etching and dry etching, the semiconductor is required to be placed in an etching tank of a wet etching device to be etched in the wet etching process, however, most of the etching tanks of the conventional wet etching device cannot well control the liquid level of the etchant when the etchant for etching the semiconductor is poured in, the etchant overflows the etching tank in the etching process due to the fact that the liquid level is too high, surrounding materials can be corroded, the semiconductor is required to be moved up and down to be fully etched in the etching process, the semiconductor cannot be fixed by the semiconductor wet etching device when the semiconductor is moved up and down, the semiconductor can be prevented from falling into a cleaning water tank in the cleaning process, the semiconductor cannot be damaged to be used, and a gas is generated due to the fact that the semiconductor reacts with the etchant when the etching process is performed, and the gas is often provided with chemical materials in the etchant, and if the wet etching device is directly opened after the etching is completed, the gas is fused into the air, and the body of a worker can be brought.
Disclosure of Invention
The present invention provides a method for etching a semiconductor trench, which solves the problems set forth in the background art.
In order to solve the technical problems, the invention adopts the following technical scheme:
A semiconductor trench etching method includes the following steps:
step one: cleaning the silicon carbide chip, removing impurities and dust on the surface of the silicon carbide chip, and ensuring the purity of the silicon carbide chip;
Step two: coating photoresist;
Step three: exposing under ultraviolet until the photoresist is subjected to chemical reaction;
Step four: immersing the exposed silicon carbide wafer in a developing solution;
Step five: placing the developed silicon carbide wafer into wet etching;
step six: and removing the photoresist remained on the silicon carbide wafer.
In a second aspect, a semiconductor wet etching device is provided, including wet etching device main part, the top fixedly connected with gas storage bin of wet etching device main part, the inner wall bottom fixedly connected with etching platform of wet etching device main part, the top left side fixedly connected with semiconductor transmission platform of etching platform, the top rear side fixedly connected with liquid level controller of etching platform.
The technical scheme of the invention is further improved as follows: the etching table comprises an etching table base, an etching pool is fixedly connected to the left side of the top of the etching table base, an etching liquid storage pool is fixedly connected to the right side of the top of the etching table base, a cleaning pool is fixedly connected to the front side of the top of the etching table base, the cleaning pool is aligned with the etching pool, two water pipes are fixedly connected to the right side of the inner wall of the etching pool, the right ends of the two water pipes penetrate through the inner wall of the etching liquid storage pool, a top plate is fixedly connected to the top of the etching liquid storage pool, the cleaning pool and the etching pool, the liquid level controller comprises a liquid level controller placing plate, the bottom of the liquid level controller placing plate is fixedly connected to the rear side of the top plate, the front side of the liquid level controller placing plate is fixedly connected with a liquid level controller main body, the top of the liquid level controller main body is fixedly connected with a double-shaft motor, the bottom left and right sides of the liquid level controller main body are respectively fixedly connected with a circuit rod, the bottoms of the two circuit rods are all extended to the inner wall of the etching pool, the left and right sides below of the liquid level controller main body are respectively fixedly connected with a screw rod limiting block, the left and right sides output ends of the double-shaft motor are respectively fixedly connected with conical teeth, the two conical teeth are respectively meshed with a second conical tooth at the lower side of one side of the double-shaft motor, the two inner walls of the second conical teeth are respectively fixedly connected with a screw rod, the bottoms of the two screw rods are respectively penetrated to the bottom of the screw rod limiting block and are respectively extended to the inner wall of the etching pool, the outer walls of the two circuit rods are respectively and slidably connected with a water level limiting block sliding shaft, the outer walls of the two water level limiting block sliding shafts are respectively fixedly connected with a water level limiting block transmission block, the inner walls of the two water level limiting block transmission blocks are respectively and threadably connected to the outer walls of the screw rods, the front sides of the two water level limiting block transmission blocks are fixedly connected with water level limiting blocks.
The technical scheme of the invention is further improved as follows: the semiconductor transmission table comprises a transmission plate, the bottom of the transmission plate is fixedly connected to the left side of the top of a top plate, a motor placement block is fixedly connected to the rear side of the transmission plate, a motor is fixedly connected to the inner wall of the motor placement block, the output end of the motor penetrates through the inner wall of the transmission plate and is fixedly connected with a transmission plate screw rod, the front end of the transmission plate screw rod is movably connected to the front side of the inner wall of the transmission plate, the outer wall of the transmission plate screw rod is in threaded connection with a vertical plate transmission block, the top of the vertical plate transmission block is fixedly connected with a vertical plate bottom plate, the right side inner wall of the vertical plate bottom plate is fixedly connected with a vertical plate motor, the output end of the vertical plate motor penetrates through the inner wall of the vertical plate and is fixedly connected with a vertical plate screw rod, the outer wall of the vertical plate screw rod is in threaded connection with a transmission rod, the right side of the transmission rod penetrates through the outer wall of the vertical plate and is fixedly connected with an L-shaped transmission rod, the right side of the bottom of the L-shaped transmission rod is fixedly connected with a semiconductor placing outer plate, the inner wall of the semiconductor placing outer plate is slidably connected with a semiconductor placing inner plate, the inner wall of the semiconductor placing inner plate is fixedly connected with a plurality of semiconductor fixing blocks, the semiconductor fixing blocks comprise a semiconductor fixing bottom plate, the front side and the rear side of the top of the semiconductor fixing bottom plate are respectively fixedly connected with a semiconductor fixing plate, the tops and the bottoms of opposite faces of the semiconductor fixing plates are respectively fixedly connected with a fixing transverse plate, the opposite faces of the two groups of the fixing transverse plates are respectively provided with two sliding grooves, the left side and the right side of the inner wall of each sliding groove are respectively and slidably connected with a sliding block, the outer walls of the two groups of the sliding blocks are respectively and rotatably connected with a rotating rod, one side of the rotating rod, far away from each sliding groove, is respectively and rotatably connected with a clamping plate, the opposite faces of the two groups of rotating rods are fixedly connected with springs.
The technical scheme of the invention is further improved as follows: the gas storage bin comprises a gas storage bin main body, the bottom of gas storage bin main body is fixedly connected with the rear side of the top of the wet etching device main body, the front side of the gas storage bin main body is fixedly connected with a suction pipe, the outer wall of one side of the suction pipe, which is far away from the gas storage bin main body, is fixedly connected with a suction opening, the outer wall of one end of the suction pipe, which is far away from the gas storage bin main body, is all extended to the inner wall of the suction opening, the outer wall of the suction opening is fixedly connected with the inner wall of the top of the wet etching device main body, the inner wall of the suction opening is fixedly connected with a suction fan motor, and the output end of the suction fan motor is fixedly connected with a suction fan.
Due to the adoption of the technical scheme, compared with the prior art, the invention has at least the following beneficial effects:
1. the invention provides a semiconductor trench etching method, when etching is needed, firstly pouring proportioned etching liquid into an etching liquid storage tank, then flowing into the etching tank through a water pipe, simultaneously starting a double-shaft motor to drive a water level limit sliding shaft and a water level limit to move downwards or upwards, and driving the water level limit on two sides to the highest limit and the lowest limit, thereby controlling the etching liquid in the etching tank, and cleaning water is stored in a cleaning tank, so that the problem that the excessive liquid level may cause the overflow of an etching agent in the etching tank in the etching process and the corrosion of surrounding materials is solved.
2. The invention provides a semiconductor groove etching method, when a semiconductor is required to be etched, firstly, the semiconductor is limited in a plurality of semiconductor fixing blocks in the semiconductor placing inner plate, the semiconductor placing inner plate is fixed in the semiconductor placing inner plate, then the semiconductor placing inner plate is inserted into the semiconductor fixing blocks, a motor is started to move the semiconductor placing inner plate to the top of a cleaning pool, then a vertical plate motor is started to drive an L-shaped transmission rod to move up and down, so that the semiconductor placing inner plate moves up and down in the cleaning pool to repeatedly clean the semiconductor, no residual impurities are ensured, the semiconductor placing inner plate is continuously moved to the top of the etching pool through the transmission of the transmission plate after the semiconductor is cleaned, and the semiconductor is etched by etching liquid in the etching pool, so that the problem that the semiconductor cannot be fixed by a semiconductor wet etching device, and the semiconductor possibly falls into the cleaning pool when the semiconductor is damaged and cannot be used is solved.
3. The invention provides a semiconductor trench etching method, which is characterized in that through mutual coordination, gas generated when a semiconductor is etched in an etching tank is started by an air suction fan motor to suck the gas into an air suction opening, the gas is conveyed into a gas storage bin main body through an air suction pipe and stored by the gas storage bin main body, and after etching is finished, gas in the gas storage bin main body is collected and processed by staff, so that the problem that a wet etching device is directly opened after etching is finished, and the gas is possibly mixed into the air to cause physical injury to the staff is solved.
Drawings
FIG. 1 is a schematic flow chart of the present invention;
FIG. 2 is a schematic diagram of the main structure of the present invention;
FIG. 3 is a schematic view of the internal perspective structure of the main body of the present invention;
FIG. 4 is a schematic diagram of an etching station structure according to the present invention;
FIG. 5 is a schematic perspective view of a liquid level controller according to the present invention;
FIG. 6 is a schematic perspective view of a semiconductor driving stage according to the present invention;
fig. 7 is a schematic perspective view of a semiconductor mounting base plate according to the present invention;
FIG. 8 is a schematic perspective sectional view of the gas storage bin of the present invention.
In the figure: 1. a wet etching apparatus main body; 2. a gas storage bin; 21. a gas storage bin body; 22. an exhaust pipe; 23. an extraction opening; 24. an air extraction fan motor; 25. an air extraction fan; 3. an etching table; 31. an etching table base; 32. an etching liquid storage tank; 33. etching pool; 34. a cleaning pool; 35. a water pipe; 36. a top plate; 4. a liquid level controller; 41. a liquid level controller placing plate; 42. a liquid level controller body; 43. a biaxial motor; 44. conical teeth; 45. a second conical tooth; 46. a screw rod limiting block; 47. a screw rod; 48. a line pole; 49. a water level limiting block transmission block; 410. a water level limiting block sliding shaft; 411. a water level limiting block; 5. a semiconductor drive stage; 51. a drive plate; 52. a motor placement block; 53. a motor; 54. a transmission plate screw rod; 55. a vertical plate transmission block; 56. a riser floor; 57. a vertical plate motor; 58. a vertical plate; 59. a vertical plate screw rod; 510. a transmission rod; 511. an L-shaped transmission rod; 512. a semiconductor placing outer plate; 513. a semiconductor placement inner plate; 514. a semiconductor fixing block; 5141. a semiconductor fixing base plate; 5142. a semiconductor fixing plate; 5143. fixing the transverse plate; 5144. a chute; 5145. a slide block; 5146. a rotating lever; 5147. a spring; 5148. and (3) clamping plates.
Detailed Description
The invention is further illustrated by the following examples:
Example 1
As shown in fig. 1-3, the present invention provides a semiconductor trench etching method, which includes the following steps:
step one: cleaning the silicon carbide chip, removing impurities and dust on the surface of the silicon carbide chip, and ensuring the purity of the silicon carbide chip;
Step two: coating photoresist;
Step three: exposing under ultraviolet until the photoresist is subjected to chemical reaction;
Step four: immersing the exposed silicon carbide wafer in a developing solution;
Step five: placing the developed silicon carbide wafer into wet etching;
step six: and removing the photoresist remained on the silicon carbide wafer.
In addition, a semiconductor wet etching device is proposed, including wet etching device main part 1, the top fixedly connected with gas storage storehouse 2 of wet etching device main part 1, the inner wall bottom fixedly connected with etching platform 3 of wet etching device main part 1, the top left side fixedly connected with semiconductor transmission platform 5 of etching platform 3, the top rear side fixedly connected with liquid level controller 4 of etching platform 3.
In this embodiment, when the semiconductor is required to be etched, firstly, the etching liquid is poured into one side of the top of the etching table 3 and flows into the other side of the top of the etching table 3, the liquid level of the etching liquid is controlled by the liquid level controller 4, the etching liquid is prevented from overflowing out of the etching table surface when the semiconductor is etched, then the semiconductor is clamped by one side of the semiconductor transmission table 5 and is transmitted to the front side of the top of the etching table 3, the semiconductor is driven to be vertically transmitted to the front side of the etching table 3 to clean the semiconductor, then the semiconductor is driven to be transmitted to the rear side of the etching table 3 for etching, and the liquid generated during etching is sucked into the gas storage bin 2 through the bottom of the gas storage bin 2, so that the gas is prevented from flowing into the air.
Example 2
As shown in fig. 4-5, on the basis of embodiment 1, the present invention provides a technical solution: preferably, the etching table 3 comprises an etching table base 31, an etching tank 33 is fixedly connected to the left side of the top of the etching table base 31, an etching liquid storage tank 32 is fixedly connected to the right side of the top of the etching table base 31, a cleaning tank 34 is fixedly connected to the front side of the top of the etching table base 31, the cleaning tank 34 is aligned with the etching tank 33, two water pipes 35 are fixedly connected to the right side of the inner wall of the etching tank 33, the right ends of the two water pipes 35 penetrate through the inner wall of the etching liquid storage tank 32, a top plate 36 is fixedly connected to the top of the etching liquid storage tank 32, the cleaning tank 34 and the top of the etching tank 33, the liquid level controller 4 comprises a liquid level controller placing plate 41, the bottom of the liquid level controller placing plate 41 is fixedly connected to the rear side of the top plate 36, the front side of the liquid level controller placing plate 41 is fixedly connected with a liquid level controller main body 42, the top of the liquid level controller main body 42 is fixedly connected with a double-shaft motor 43, the left and right sides of the bottom of the liquid level controller main body 42 are respectively and fixedly connected with a circuit rod 48, the bottoms of the two circuit rods 48 are respectively and fixedly connected with a screw rod limiting block 46, the left and right sides of the liquid level controller main body 42 are respectively and fixedly connected with conical teeth 44, the lower sides of one sides of the two conical teeth 44 far away from the double-shaft motor 43 are respectively and fixedly connected with a second conical tooth 45, the inner walls of the two second conical teeth 45 are respectively and fixedly connected with a screw rod 47, the bottoms of the two screw rods 47 are respectively and fixedly connected with the bottoms of the screw rod limiting block 46 and extend to the inner wall of the etching tank 33, the outer walls of the two circuit rods 48 are respectively and fixedly connected with a water level limiting block sliding shaft 410, the outer walls of the two water level limiting block sliding shafts 410 are respectively and fixedly connected with a water level limiting block transmission block 49, the inner walls of the two water level limiting block transmission blocks 49 are respectively and fixedly connected with the outer walls of the screw rod 47, the front sides of the two water level limiting block transmission blocks 49 are fixedly connected with a water level limiting block 411.
In this embodiment, when etching is required, firstly, the proportioned etching solution is poured into the etching solution storage tank 32, then flows into the etching solution tank 33 through the water pipe 35, simultaneously starts the double-shaft motor 43 at the top of the liquid level controller placing plate 41 to drive the conical teeth 44 at two sides to rotate and drive the second conical teeth 45 to drive the screw rod 47 to rotate, the water level limit transmission blocks 49 at two sides after the screw rod 47 rotates respectively drive the water level limit sliding shaft 410 and the water level limit 411 to move downwards or upwards, the water level limit sliding shaft 410 at two sides slides on the outer wall of the line rod 48, the water level limit sliding shaft 410 is internally provided with the line access water level limit 411, the water level limit 411 at two sides is driven to the highest limit and the lowest limit, so that the etching solution in the etching solution tank 33 is controlled, when the etching solution is lower than the lowest limit, the etching solution in the etching solution tank 32 is pumped through the water pipe 35, the etching solution in the etching solution tank 33 is discharged into the etching solution tank 32 through the other water pipe 35, and the cleaning water tank 34 is stored in the cleaning water tank.
Example 3
As shown in fig. 6-7, on the basis of embodiment 1, the present invention provides a technical solution: preferably, the semiconductor transmission platform 5 comprises a transmission plate 51, the bottom of the transmission plate 51 is fixedly connected to the left side of the top plate 36, a motor placement block 52 is fixedly connected to the rear side of the transmission plate 51, a motor 53 is fixedly connected to the inner wall of the motor placement block 52, the output end of the motor 53 penetrates through the inner wall of the transmission plate 51 and is fixedly connected with a transmission plate screw rod 54, the front end of the transmission plate screw rod 54 is movably connected to the front side of the inner wall of the transmission plate 51, the outer wall of the transmission plate screw rod 54 is in threaded connection with a vertical plate transmission block 55, the top of the vertical plate transmission block 55 is fixedly connected with a vertical plate bottom plate 56, the right side inner wall of the vertical plate bottom plate 56 is fixedly connected with a vertical plate motor 57, the right side of the top of the vertical plate bottom plate 56 is fixedly connected with a vertical plate 58, the output end of the vertical plate motor 57 penetrates through the inner wall of the vertical plate 58 and is fixedly connected with a vertical plate screw rod 59, the outer wall of the vertical plate screw rod 59 is in threaded connection with a transmission rod 510, the right side of the transmission rod 510 penetrates through the outer wall of the vertical plate 58 and is fixedly connected with an L-shaped transmission rod 511, the right side of the bottom of the L-shaped transmission rod 511 is fixedly connected with a semiconductor placing outer plate 512, the inner wall of the semiconductor placing outer plate 512 is slidably connected with a semiconductor placing inner plate 513, the inner wall of the semiconductor placing inner plate 513 is fixedly connected with a plurality of semiconductor fixing blocks 514, the semiconductor fixing blocks 514 comprise a semiconductor fixing bottom plate 5141, the front side and the rear side of the top of the semiconductor fixing bottom plate 5141 are respectively fixedly connected with a semiconductor fixing plate 5142, the top and the bottom of opposite surfaces of the two semiconductor fixing plates 5142 are respectively fixedly connected with a fixing transverse plate 5143, opposite surfaces of the two groups of fixing transverse plates 5143 are respectively provided with two sliding grooves 5144, the left side and the right side of the inner wall of the two groups of sliding grooves 5144 are respectively slidably connected with a sliding block 5145, the outer walls of the two groups of sliding blocks 5145 are respectively rotatably connected with a rotating rod 5146, the two sets of rotating rods 5146 are respectively connected with a clamping plate 5148 in a rotating way on one side far away from the sliding groove 5144, and the opposite faces of the two sets of rotating rods 5146 are respectively fixedly connected with a spring 5147.
In this embodiment, when the semiconductor is required to be etched, the semiconductor is limited in the plurality of semiconductor fixing blocks 514 in the semiconductor placing inner plate 513, the clamping plates 5148 on the upper and lower sides of the top of the semiconductor fixing bottom plate 5141 are pulled, the clamping plates 5148 press the rotating rods 5146, the rotating rods 5146 slide on the two sides in the inner part of the fixed transverse plate 5143 through the sliding grooves 5144, the springs 5147 on the opposite sides are pulled, after the clamping plates 5148 are adjusted to be the proper thickness of the semiconductor, the clamping plates 5148 are released, the springs 5147 reset the clamping plates 5148 to clamp the two sides of the semiconductor which is not required to be etched, the semiconductor is fixed in the semiconductor placing inner plate 513, then the semiconductor placing inner plate 513 is inserted into the semiconductor fixing blocks 514, the vertical plate transmission block 55 is driven by the starting motor 53 to drive the vertical plate 58 to move the semiconductor placing inner plate 513 to the top of the cleaning tank 34, then the vertical plate motor 57 is started, the transmission rod 510 drives the L-shaped transmission rod 511 to move up and down, the semiconductor placing inner plate 513 is enabled to move up and down in the cleaning tank 34, repeated cleaning is carried out, the semiconductor placing inner plate 513 is enabled not to remain on the semiconductor placing inner plate 513, the semiconductor is not to remain in the etching tank, the semiconductor is enabled to remain in the inner plate, and the semiconductor is kept to be etched, and the inner through the transmission plate is driven to move down through the transmission plate 33 to the vertical plate 33 after the transmission plate is driven by the transmission plate 55 to move the vertical plate is driven by the vertical plate after the transmission plate is driven by the driving plate 55.
Example 4
As shown in fig. 8, on the basis of embodiment 1, the present invention provides a technical solution: preferably, the gas storage bin 2 comprises a gas storage bin main body 21, the bottom of the gas storage bin main body 21 is fixedly connected to the rear side of the top of the wet etching device main body 1, the front side of the gas storage bin main body 21 is fixedly connected with a suction pipe 22, the outer wall of one side of the suction pipe 22, which is far away from the gas storage bin main body 21, is fixedly connected with a suction opening 23, the outer wall of one end of the suction pipe 22, which is far away from the gas storage bin main body 21, is all extended to the inner wall of the suction opening 23, the outer wall of the suction opening 23 is fixedly connected to the inner wall of the top of the wet etching device main body 1, the inner wall of the suction opening 23 is fixedly connected with a suction fan motor 24, and the output end of the suction fan motor 24 is fixedly connected with a suction fan 25.
In this embodiment, the gas generated when the semiconductor is etched in the etching tank 33 is driven by the air suction fan motor 24 to rotate by the air suction fan 25, the gas is sucked into the air suction opening 23 and is conveyed into the air storage bin body 21 through the air suction pipe 22, the gas is stored by the air storage bin body 21, and after the etching is completed, the gas in the air storage bin body 21 is collected and processed by staff.
The working principle of the semiconductor trench etching method is described in detail below.
As shown in fig. 1-8, when etching is required, firstly pouring the proportioned etching liquid into the etching liquid storage tank 32, then flowing into the etching tank 33 through the water pipe 35, simultaneously starting the double-shaft motor 43 at the top of the liquid level controller placing plate 41 to drive the conical teeth 44 at two sides to rotate and drive the second conical teeth 45 to drive the screw rod 47 to rotate, respectively driving the water level limit block driving blocks 49 at two sides after the screw rod 47 rotates to drive the water level limit block sliding shaft 410 and the water level limit block 411 to move downwards or upwards, respectively, sliding the water level limit block sliding shaft 410 at two sides on the outer wall of the line rod 48, arranging a line access water level limit block 411 in the water level limit block sliding shaft 410, driving the water level limit block 411 at two sides to the highest limit and the lowest limit, thereby controlling the etching liquid in the etching tank 33, extracting the etching liquid in the etching liquid storage tank 32 through the water pipe 35 when the etching liquid is lower than the lowest limit, when etching liquid reaches the highest limit, the etching liquid in the etching tank 33 is discharged into the etching liquid storage tank 32 through the other water pipe 35, the cleaning water is stored in the cleaning tank 34, when the semiconductor is required to be etched, firstly, the semiconductor is limited in a plurality of semiconductor fixing blocks 514 in the semiconductor placing inner plate 513, the clamping plates 5148 on the upper side and the lower side of the top of the semiconductor fixing bottom plate 5141 are pulled, the clamping plates 5148 press the rotating rod 5146, the rotating rod 5146 slides to two sides in the inside of the fixing transverse plate 5143 through the sliding grooves 5144, the springs 5147 on the opposite sides are pulled, after the clamping plates 5148 are adjusted to be suitable for the thickness of the semiconductor, the clamping plates 5148 are released, the springs 5147 reset the clamping plates 5148 to clamp the two sides of the semiconductor which is not required to be etched, the semiconductor placing inner plate 513 is fixed in the semiconductor placing inner plate 513, then the semiconductor placing inner plate 513 is inserted into the semiconductor fixing blocks 514, the starting motor 53 drives the vertical plate transmission block 55 to drive the vertical plate 58 to move, the semiconductor placing inner plate 513 is moved to the top of the cleaning tank 34, then the vertical plate motor 57 is started, the transmission rod 510 drives the L-shaped transmission rod 511 to move up and down, so that the semiconductor placing inner plate 513 moves up and down in the cleaning tank 34 to repeatedly clean, no impurities remain on the semiconductor, the semiconductor placing inner plate 513 is driven to move to the top of the etching tank 33 through the transmission plate 51 after cleaning, the semiconductor placing inner plate 513 is driven down to the inside of the etching tank 33 through the starting vertical plate motor 57, the semiconductor is etched by etching liquid in the etching tank 33, gas generated during etching of the semiconductor in the etching tank 33 is pumped into the inside of the gas storage tank 21 through the gas pumping fan motor 24 to rotate, the gas is sucked into the inside of the gas suction port 23 and is conveyed into the inside of the gas storage tank main body 21 through the gas pumping fan 22, the gas storage tank main body 21 is stored, and after etching is finished, gas is collected and processed by staff.
The foregoing invention has been generally described in great detail, but it will be apparent to those skilled in the art that modifications and improvements can be made thereto. Accordingly, it is intended to cover modifications or improvements within the spirit of the inventive concepts.
Claims (7)
1. A semiconductor trench etching method is characterized in that: the semiconductor groove etching method comprises the following steps:
step one: cleaning the silicon carbide chip, removing impurities and dust on the surface of the silicon carbide chip, and ensuring the purity of the silicon carbide chip;
Step two: coating photoresist;
Step three: exposing under ultraviolet until the photoresist is subjected to chemical reaction;
Step four: immersing the exposed silicon carbide wafer in a developing solution;
step five: placing the developed silicon carbide wafer into a semiconductor wet etching device for wet etching;
step six: removing the photoresist remained on the silicon carbide wafer;
The semiconductor wet etching device comprises a wet etching device main body (1), wherein the top of the wet etching device main body (1) is fixedly connected with a gas storage bin (2), the bottom of the inner wall of the wet etching device main body (1) is fixedly connected with an etching table (3), the left side of the top of the etching table (3) is fixedly connected with a semiconductor transmission table (5), and the rear side of the top of the etching table (3) is fixedly connected with a liquid level controller (4);
The semiconductor transmission table (5) comprises a transmission plate (51), the bottom of the transmission plate (51) is fixedly connected to the left side of the top plate (36), a motor placement block (52) is fixedly connected to the rear side of the transmission plate (51), a motor (53) is fixedly connected to the inner wall of the motor placement block (52), an output end of the motor (53) penetrates through the inner wall of the transmission plate (51) and is fixedly connected with a transmission plate screw rod (54), the front end of the transmission plate screw rod (54) is movably connected to the front side of the inner wall of the transmission plate (51), a vertical plate transmission block (55) is connected to the outer wall thread of the transmission plate screw rod (54), a vertical plate bottom plate (56) is fixedly connected to the top of the vertical plate transmission block (55), a vertical plate motor (57) is fixedly connected to the right side inner wall of the vertical plate bottom plate (56), an output end of the vertical plate motor (53) penetrates through the inner wall of the vertical plate (58) and is fixedly connected with the vertical plate (58), a right side of the transmission plate screw rod (59) is fixedly connected to the outer wall of the vertical plate (511), a right side of the transmission rod (511) is fixedly connected to the right side of the transmission rod (511), the inner wall of the semiconductor placement outer plate (512) is connected with a semiconductor placement inner plate (513) in a sliding mode, and a plurality of semiconductor fixing blocks (514) are fixedly connected to the inner wall of the semiconductor placement inner plate (513).
2. The method of claim 1, wherein: the etching table (3) comprises an etching table base (31), an etching tank (33) is fixedly connected to the left side of the top of the etching table base (31), an etching liquid storage tank (32) is fixedly connected to the right side of the top of the etching table base (31), a cleaning tank (34) is fixedly connected to the front side of the top of the etching table base (31), and the cleaning tank (34) is aligned with the etching tank (33).
3. The method of claim 2, wherein: two water pipes (35) are fixedly connected to the right side of the inner wall of the etching tank (33), the right ends of the two water pipes (35) penetrate through the inner wall of the etching liquid storage tank (32), and a top plate (36) is fixedly connected to the tops of the etching liquid storage tank (32), the cleaning tank (34) and the etching tank (33).
4. The method of claim 1, wherein: the liquid level controller (4) comprises a liquid level controller placing plate (41), the bottom of the liquid level controller placing plate (41) is fixedly connected to the rear side of the top plate (36), the front side of the liquid level controller placing plate (41) is fixedly connected with a liquid level controller main body (42), the top of the liquid level controller main body (42) is fixedly connected with a double-shaft motor (43), the left side and the right side of the bottom of the liquid level controller main body (42) are respectively fixedly connected with a circuit rod (48), the bottoms of the two circuit rods (48) are all extended to the inner wall of the etching pool (33), and the lower sides of the left side and the right side of the liquid level controller main body (42) are respectively fixedly connected with a screw rod limiting block (46).
5. The method of claim 4, wherein: the left and right sides output of biax motor (43) is fixedly connected with toper tooth (44) respectively, two toper tooth (44) is kept away from one side below of biax motor (43) and is all meshed second toper tooth (45), two the equal fixedly connected with lead screw (47) of inner wall of second toper tooth (45), two the bottom of lead screw (47) all runs through to the bottom of lead screw stopper (46) and extends to the inner wall of etching pond (33), two the equal sliding connection of outer wall of circuit pole (48) has water level stopper slide (410), two the equal fixedly connected with water level stopper transmission piece (49) of outer wall of water level stopper slide (410), two the equal threaded connection of inner wall of water level stopper transmission piece (49) is at the outer wall of lead screw (47), two the equal fixedly connected with water level stopper (411) of front side of water level stopper transmission piece (49).
6. The method of claim 1, wherein: the semiconductor fixing block (514) comprises a semiconductor fixing bottom plate (5141), semiconductor fixing plates (5142) are fixedly connected to the front side and the rear side of the top of the semiconductor fixing bottom plate (5141) respectively, two fixing transverse plates (5143) are fixedly connected to the top and the bottom of opposite faces of the semiconductor fixing plates (5142), two sliding grooves (5144) are formed in opposite faces of the fixing transverse plates (5143), sliding blocks (5145) are slidingly connected to the left side and the right side of the inner wall of each sliding groove (5144), rotating rods (5146) are rotationally connected to the outer walls of the two sliding blocks (5145), clamping plates (5148) are rotationally connected to one sides, far away from the sliding grooves (5144), of the rotating rods (5146), and springs (5147) are fixedly connected to opposite faces of the rotating rods (5146).
7. The method of claim 6, wherein: the gas storage bin (2) comprises a gas storage bin main body (21), the bottom fixedly connected with of gas storage bin main body (21) is at the top rear side of wet etching device main body (1), the front side fixedly connected with exhaust tube (22) of gas storage bin main body (21), one side outer wall fixedly connected with extraction opening (23) of gas storage bin main body (21) is kept away from to exhaust tube (22), one end outer wall that gas storage bin main body (21) was kept away from to exhaust tube (22) all extends to the inner wall of extraction opening (23), the outer wall fixedly connected with of extraction opening (23) is at the top inner wall of wet etching device main body (1), the inner wall fixedly connected with extraction fan motor (24) of extraction opening (23), the output fixedly connected with extraction fan (25) of extraction fan motor (24).
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