CN117966127A - Heat conduction structure of precursor source bottle and control method - Google Patents
Heat conduction structure of precursor source bottle and control method Download PDFInfo
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- CN117966127A CN117966127A CN202410391003.6A CN202410391003A CN117966127A CN 117966127 A CN117966127 A CN 117966127A CN 202410391003 A CN202410391003 A CN 202410391003A CN 117966127 A CN117966127 A CN 117966127A
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- 239000002243 precursor Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 66
- 238000005192 partition Methods 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000005452 bending Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims description 16
- 238000010926 purge Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000010408 sweeping Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 43
- 239000012159 carrier gas Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention provides a heat conduction structure of a precursor source bottle and a control method, wherein the heat conduction structure of the precursor source bottle comprises the following components: a shell with a cavity, a heat conduction flow passage partition board arranged in the cavity, and the like. And the heat conduction flow passage partition plate is arranged in the cavity in a bending way and divides the cavity into a plurality of heat conduction spaces. The heat conducting space is used for placing the solid precursor source and enabling the solid precursor source to flow upwards after being heated to form solid precursor source steam. Compared with the prior art, the method can better realize uniform heating of the solid precursor and generate stable solid precursor steam.
Description
Technical Field
The invention relates to a precursor source bottle, in particular to a heat conduction structure of the precursor source bottle and a control method.
Background
Precursors are important raw materials for the semiconductor industry, and are mainly used in semiconductor thin film deposition processes, including chemical vapor deposition CVD, physical vapor deposition PVD, atomic layer vapor deposition ALD, and other deposition techniques derived therefrom. In order to achieve vapor deposition, a precursor needs to be delivered into the deposition chamber, which requires a precursor source bottle and a corresponding delivery system, and a stable precursor vapor needs to be provided to react in the reaction chamber or on the substrate to produce the film.
However, the existing solid precursor source bottle is generally processed by a traditional container manufacturing factory, is limited by processing conditions and process flows, and is difficult to meet the requirement of ultra-high cleanliness in the semiconductor industry and pollute products for the internal processing method of the precursor source bottle. As disclosed in patent application CN 113897593A, the internal cavity of the precursor source bottle is not provided with a heat-conducting partition wall or the heat-conducting flow channel partition plate is not reasonably arranged, so that the solid precursor is heated unevenly, and stable solid precursor vapor cannot be generated.
Therefore, how to provide a heat conduction structure and a control method for a precursor source bottle to better realize uniform heating of a solid precursor source and generate stable solid precursor vapor is a technical problem to be solved in the invention.
Disclosure of Invention
The invention aims to provide a heat conduction structure of a precursor source bottle, so as to better keep solid precursor heated uniformly and generate stable solid precursor steam.
In order to achieve the above object, the present invention provides a heat conduction structure of a precursor source bottle, comprising: a housing having a cavity;
the heat conduction flow passage partition plate is arranged in the cavity;
The heat conduction flow passage partition plate is arranged in the cavity in a bending way and divides the cavity into a plurality of heat conduction spaces;
The heat conducting space is used for placing a solid precursor source and enabling the solid precursor source to flow upwards after being heated to form solid precursor source steam.
Further preferably, the heat conduction flow passage partition plate includes: a plurality of convex sections and concave sections which are connected end to end in sequence, and a flat section for connecting the convex sections and the concave sections; and, the length of the return path formed by the convex section and the concave section adjacent to each other gradually increases from one end of the inner wall connecting the cavity toward one end of the inner wall facing away from the cavity.
Further preferably, the heat conducting runner partition plate is further provided with through hole areas, and the through holes in the through hole areas are distributed in a grid shape or in an array shape.
Further preferably, the heat conducting flow passage partition plate is provided with a plurality of rows of through hole areas, the arrangement paths of the through hole areas are in spiral arrangement, the through hole areas in the uppermost row are arranged below the adjacent air outlets, and the through hole areas in the lowermost row are arranged below the adjacent air inlets.
Further preferably, the width of the heat conduction flow passage partition plate gradually decreases from one end connected with the inner wall of the cavity toward one end facing away from the inner wall of the cavity.
Further preferably, the heat conduction flow passage partition plate includes: the heat conducting sections are mutually connected to form, two adjacent heat conducting sections are made of different metals, and the heat conducting performance of each heat conducting section is gradually increased from one end of the inner wall of the cavity to one end of the inner wall facing away from the cavity.
Further preferably, the number of the heat conduction flow passage clapboards is at least two, and the heat conduction flow passage clapboards are arranged at intervals in parallel; and the convex section of one heat conduction flow passage partition plate corresponds to the concave section of the other heat conduction flow passage partition plate.
Further preferably, the material of the heat conduction flow passage partition plate is any one or more of silver, copper, aluminum and iron.
Further preferably, the heat conducting structure of the precursor source bottle further includes: the device comprises a cover body for sealing the cavity, a current-carrying gas pipe penetrating through the cover body and extending into the cavity, a gas outlet pipe communicated with the cover body and extending into the cavity, a communicating pipe for communicating the current-carrying gas pipe and the gas outlet pipe, a first valve arranged on the current-carrying gas pipe, a second valve arranged on the gas outlet pipe, and a third valve arranged on the communicating pipe and communicated with an external sweeping gas source; the end part of the shell is provided with a sealing convex ring, and the cover body is provided with a sealing groove sleeved by the sealing convex ring.
The application also provides a control method of the heat conduction structure of the precursor source bottle, which is used for controlling the heat conduction structure of the precursor source bottle and comprises the following steps:
Carrying out gas purging treatment on the cavity and a current carrying gas pipe and a gas outlet pipe which are communicated with the cavity;
after a solid precursor source is placed in the cavity, the cavity is sealed, and the cavity is heated, so that the solid precursor source flows upwards along the heat conducting space after being heated to form solid precursor source steam.
Compared with the prior art, the heat conduction structure of the precursor source bottle can better realize uniform heating of the solid precursor and generate stable solid precursor steam.
Drawings
Fig. 1 is a schematic perspective view of a heat conducting structure of a precursor source bottle according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram showing the internal structure of a heat conducting structure of a precursor source vessel according to a first embodiment of the present invention;
FIG. 3 is a schematic view of a heat conducting channel separator according to a first embodiment of the present invention;
FIG. 4 is a schematic view of a heat conducting channel separator according to a second embodiment of the present invention;
FIG. 5 is a top view of a thermally conductive structure of a precursor source vessel in accordance with a second embodiment of the present invention;
FIG. 6 is a top view of a thermally conductive structure of a precursor source vessel in accordance with a third embodiment of the present invention;
FIG. 7 is a schematic view of the structure shown in section A-A of FIG. 6;
FIG. 8 is a schematic view of the structure shown in section C-C of FIG. 6;
FIG. 9 is a schematic diagram showing the internal structure of a heat conducting structure of a precursor source vessel according to a third embodiment of the present invention;
FIG. 10 is a schematic view showing the structure of the section A-A in FIG. 6 in a fourth embodiment of the present invention;
FIG. 11 is a schematic diagram showing the internal structure of a heat conducting structure of a precursor source vessel according to a fourth embodiment of the present invention;
fig. 12 is a schematic partial structure of a separator for a heat conducting flow channel according to a fifth embodiment of the present invention.
The reference numerals indicate that the shell 1, the cover body 2, the second valve 4, the third valve 5, the cavity 7, the heat conduction flow passage partition plate 8, the area 8a, the area 8b, the through hole 80, the convex section 81, the concave section 82, the flat section 83, the current-carrying air pipe 9, the first valve 3, the sealing convex ring 11, the air outlet pipe 12 and the communicating pipe 13.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1 to 3, the present embodiment provides a heat conduction structure of a precursor source bottle, which includes: a housing 1 with a cavity 7, a thermally conductive flow path baffle 8 disposed within the cavity 7, and the like.
And, heat conduction runner baffle 8 is the setting of bending in cavity 7 to separate into a plurality of heat conduction space with cavity 7.
The heat conducting space is used for placing the solid precursor source and enabling the solid precursor source to flow upwards after being heated to form solid precursor source steam.
From the above, it can be seen that: because the heat conduction flow passage partition plate 8 in the embodiment is arranged in a bending manner in the cavity 7 and divides the cavity 7 into a plurality of heat conduction spaces, and because the heat conduction flow passage partition plate 8 is arranged in a bending manner, the contact area between the heat conduction flow passage partition plate and gas is increased, and each region can be uniformly heated well, so that the problem that the solid precursor source in each region of the cavity is difficult to provide stable solid precursor source steam due to uneven heating is avoided.
In addition, the heat conduction flow passage partition plate 8 with the structure optimizes the heat conduction space in the cavity, so that the depth of the cavity 7 in the embodiment is enough deep in design, a plurality of stacked trays are not needed to be adopted for arrangement, the shell 1 with the heat conduction structure and the cavity can be assembled for use only by processing, and stable solid precursor source steam can be provided, therefore, the structure is simplified, the assembly is convenient, and the cost is reduced.
Further preferably, as shown in fig. 3, the heat conduction flow path separator 8 includes: a plurality of convex sections 81 and concave sections 82 which are connected end to end in sequence, a flat section 83 for connecting the convex sections 81 and the concave sections 82, and the like. And, the length of the return path formed by the convex section 81 and the concave section 82 adjacent to each other gradually increases from one end of the inner wall of the connection chamber 7 toward one end of the inner wall facing away from the chamber 7.
Through the arrangement structure of the convex section 81, the concave section 82 and the flat section 83, the contact area of the heat conduction flow passage partition plate can be increased, and the flow path of the solid precursor source steam can be prolonged, so that the heating time of the solid precursor source steam before being discharged is further prolonged, the gas in each area can be fully heated and effectively discharged, the sublimation efficiency of the solid precursor source is improved, the gas is prevented from being generated due to the fact that the partial area is fully heated, the rate of generated gas is slower due to the fact that the other part is heated unevenly, and the generated gas is further caused, namely, the precursor source steam is unstable.
In addition, it should be noted that the curved shapes of the convex section 81 and the concave section 82 in the present embodiment are preferably U-shaped, and the flat section 83 may be designed to be U-shaped, S-shaped, etc. curved shapes according to actual requirements, so as to further optimize the heat conducting space, which is not specifically limited and described herein.
Further preferably, in order to meet the processing and heat conduction requirements in practical applications, the length of the flat section 83 in the present embodiment may be more than twice the lengths of the convex section 81 and the concave section 82.
Further preferably, the shape of the heat-conducting runner partition 8 is preferably any one of S-shape, serpentine shape or zigzag shape or a combination thereof, and may be made of round steel, for example, S31603 austenitic stainless steel, and formed by milling with the housing 1 at one time, so as to reduce the cost. In addition, in order to facilitate processing and ensure the strength of connection, the area where the heat conduction flow passage partition plate 8 is connected with the housing 1 is provided by the edge of the housing protruding inwards. Obviously, the heat-conducting runner diaphragm 8 in this embodiment may also be manufactured by welding, and is not particularly limited herein.
Further preferably, the number of the heat conduction flow passage partitions 8 is at least two, and the heat conduction flow passage partitions are arranged in parallel at intervals. And, the convex section 81 of one of the heat conduction flow path separators 8 corresponds to the concave section 82 of the other heat conduction flow path separator 8. Through the arrangement mode, the division of the heat conduction space can be more reasonable, the heat conduction area and time of each area are close, and further, each area can be guaranteed to be heated uniformly.
Further, the heat conduction flow path separator 8 is preferably made of any one or a combination of two or more of silver, copper, aluminum and iron, and this embodiment is described by taking a stainless steel material as an example.
Further preferably, the heat conducting structure of the precursor source bottle further includes: the device comprises a cover body 2 for sealing the cavity, a current-carrying gas pipe 9 penetrating through the cover body and extending into the cavity, a gas outlet pipe 12 communicated with the cover body and extending into the cavity, a communicating pipe 13 for communicating the current-carrying gas pipe 9 and the gas outlet pipe 12, a first valve 3 arranged on the current-carrying gas pipe 9, a second valve 4 arranged on the gas outlet pipe 12, a third valve 5 arranged on the communicating pipe 13 and communicated with an external sweeping gas source, and the like.
Through the cooperation of each valve, especially the cooperation of third valve 5 for purge carrier gas pipe 9, outlet duct 12 and communicating pipe 13 etc. in order to avoid leading to the gas mixture to get into the pipeline of the deposition equipment that is linked together etc. because of residual gas is not removed in the gas pipeline, therefore can effectively prevent the pollution risk of the external pipeline of solid precursor, in order to prevent because of reasons such as valve selection or the unreasonable pipeline connection mode of setting, lead to carrier gas pipe 9, outlet duct 12 and communicating pipe 13 to constitute gas mixture outlet pipeline etc. and can't be purged completely, so that the unstable condition of whole vapor deposition process produces.
In addition, as a further preferable mode, the surface roughness of the inner wall of the cavity after the EP electrochemical polishing treatment is less than or equal to 0.25 mu m after the processing is finished, so that a compact protective film is formed, and the risk of polluting products by the solid precursor source bottle is effectively avoided.
Further preferably, in order to better enhance the sealing effect of the cavity 7 in the housing 1, the end 10 of the housing 1 is provided with a sealing convex ring 11, and the cover 2 is provided with a sealing groove for being sleeved by the sealing convex ring 11.
To better explain the working principle of the present embodiment, a solid precursor is added to the chamber in a glove box as shown below so as to be uniformly arranged in the chamber 7. After the carrier gas inlet pipeline, namely the carrier gas pipe 9, and the mixed gas outlet pipeline, namely the gas outlet pipe 12, the communicating pipe 13 and the corresponding valve are arranged, heating devices such as a heating sleeve and the like are arranged on the outer wall of the shell 1 in a coating manner.
Before production, the solid precursor vapor outlet valve, i.e., the first valve 3, and the carrier gas on-off valve, i.e., the second valve 4, are closed, then the bypass switch valve, i.e., the third valve 5, is opened, and purge gas or the like composed of inert gas is introduced to purge the above-mentioned piping, so as to clean the external communication piping communicating with the solid precursor source bottle.
Then, after a solid precursor source is placed in the cavity 7 in a closed vacuum environment, the cavity 7 of the shell 1 is sealed, then, during production, an electric heating switch of a heating sleeve outside the shell 1 is opened to heat the precursor source bottle, a precursor vapor outlet valve and a carrier gas on-off valve are opened, a bypass switch valve is closed, and after the system reaches a set condition, the precursor source bottle provides stable solid precursor source vapor for a vapor deposition cavity or a substrate in deposition equipment so as to provide a stable gas source for a subsequent vapor deposition process.
In addition, it should be noted that the solid precursor source in this embodiment may be preferably any one of a High-K (High-K) precursor, a silicon oxide and silicon nitride precursor, a metal and metal nitride, and the like.
Example two
As shown in fig. 4 to 5, this embodiment provides a heat conducting structure of a precursor source bottle, which is a further improvement of the first embodiment, and is characterized in that the heat conducting channel separator 8 is further provided with a through hole area, wherein through holes 80 in the through hole area are distributed in a grid shape.
Through the mode that sets up the through-hole district, can make each district be mutually connected to make solid-state precursor source steam after preliminary the generation, can free flow in the cavity, thereby can drive each district evenly heating well, further ensure that each district can evenly heat, in addition, still be favorable to when sweeping through the purge gas, promote purge efficiency and inside cleanliness factor, and avoid appearing the dead angle and be difficult to the condition of handling.
Further preferably, the width of the heat conduction flow path partition 8 is gradually reduced from one end of the inner wall of the connection chamber 7 toward one end of the inner wall facing away from the chamber 7.
By the structure, the problem that the solid precursor source positioned in the central area of the cavity is difficult to provide stable solid precursor source steam due to uneven heating can be well avoided, and the difference between the heat exchange efficiency of the peripheral area and the heat exchange efficiency of the central area are reduced.
Further preferably, the heat conducting channel separator 8 may be formed by connecting a plurality of heat conducting sections to form the curved shape during the production design, wherein two adjacent heat conducting sections are made of different metals, and the heat conducting performance of each heat conducting section is gradually increased from one end of the inner wall of the connecting cavity 7 to one end of the inner wall facing away from the cavity 7. It should be noted that, in this embodiment, each heat conducting section may be formed by welding or integrally molding, and the specific limitation and details are not repeated herein.
The structure can better avoid that the solid precursor source positioned in the central area of the cavity is difficult to form stable solid precursor source steam due to uneven heating, and can further better reduce the difference between the heat exchange efficiency of the peripheral area and the central area.
Further preferably, the hole diameter of the through hole in the through hole region of the above-mentioned heat conduction flow path separator 8 is 1.5-3mm, and this embodiment is exemplified by only 3 mm.
In addition, it is worth mentioning that the thickness of the heat conduction flow passage partition 8 in this embodiment ranges from 2mm to 3mm. Through this structural parameter, not only can make things convenient for the circulation of gas, promote coefficient of heat conductivity, can guarantee the intensity of its structure moreover.
Example III
As shown in fig. 6 to 9, the present embodiment provides a heat conducting structure of a precursor source bottle, which is substantially the same as that of the second embodiment, and the improvement is that the thicker region 8a of the heat conducting channel partition 8 in the present embodiment is provided with a through hole region, and the thinner region 8b is provided with a through hole region.
Through the through hole area is arranged in the thicker area of the heat conduction flow passage partition plate 8, the defects of poor heat conductivity and the like in the thicker area of the heat conduction flow passage partition plate 8 are overcome, the fluidity of gas is increased, and therefore the areas can be well kept heated uniformly, and stable solid precursor source steam is generated.
Further preferably, the thickness of the thicker region 8a of the heat conduction flow path separator 8 is 2.5mm or more.
Further preferably, the pitch between the through holes in the through hole region is 3.5 to 5mm.
Example IV
As shown in fig. 10 and 11, this embodiment provides a heat conducting structure of a precursor source bottle, which is a further improvement of any of the above embodiments, and is characterized in that a plurality of rows of through hole areas are formed on the heat conducting channel partition plate 8, the arrangement path of each row of through hole areas is in spiral arrangement, the through hole area of the uppermost row is located below the air outlet, and the through hole area of the lowermost row is located below the air inlet.
Through this structure, can make the solid precursor source steam of former generation, can be according to the route of arranging of through-hole 80 in each through-hole district, rise well spiral, and further lengthen its heated route in three-dimensional space, and can freely carry out the heat interaction with each runner of heat conduction runner baffle 8, and then ensure the solid precursor source steam of former heat generation and the solid precursor source steam of latter heat generation can be discharged from leading to the gas outlet in proper order, avoid partial solid precursor source steam to gather in a certain region and be difficult to discharge because of the separation of inner wall and heat conduction runner baffle 8 of cavity. In addition, through this structure, still be favorable to gaseous sweeping treatment more to further promote the cleanliness factor of internal environment.
Example five
The present embodiment provides a heat conducting structure of a precursor source bottle, which is a further improvement of any one of the above embodiments, and the improvement is that hole walls at opposite ends of the through hole in the present embodiment contact with the surface of the heat conducting channel separator 8 through smooth arc transition surfaces.
Through the structure of the through hole 80, not only the circulation efficiency can be increased, but also dead angles can be avoided, and pollutants such as dust are not easy to adhere to the upper surface and are difficult to clean, for example, tiny particles in the solid precursor source are prevented from adhering to the hole wall in the process of rising along with the gas and are not easy to sweep the subsequent gas, so that the cleanliness of the internal environment of the cavity 7 is maintained to the greatest extent.
Further, as shown in fig. 12, in this embodiment, the through holes 80 are formed in an upward inclined manner, so that in the process of raising the gas, the tiny particles that are not evaporated to form gas in the solid precursor source flow through the through holes 80 and collide with each other, or fall back to the lower side under the action of gravity, thereby improving the sublimation efficiency of the solid precursor source.
Example six
The embodiment provides a method for controlling a heat conduction structure of a precursor source bottle, which is used for controlling the heat conduction structure of the precursor source bottle provided by any one of the embodiments, and includes the following steps:
Step one, carrying out gas purging treatment on a cavity 7, a current carrying gas pipe 9, a gas outlet pipe 12 and the like which are communicated with the cavity 7;
And step two, after the solid precursor source is arranged in the cavity 7, sealing the cavity, and heating the cavity so that the solid precursor source flows along the heat conduction space after being heated to form solid precursor source steam.
Specifically, before production, the solid precursor vapor outlet valve, namely the first valve 3, and the carrier gas on-off valve, namely the second valve 4 are closed, then the bypass switch valve, namely the third valve 5, is opened, and purge pipelines such as purge gas formed by inert gas are introduced to clean an external communication pipeline communicated with the solid precursor source bottle, then after the solid precursor source is placed in the cavity 7 in a closed vacuum environment, the cavity 7 is sealed, then during production, the electric heating switch of the heating sleeve is heated and opened to heat the shell 1 of the precursor source bottle, the precursor vapor outlet valve and the carrier gas on-off valve are opened, the bypass switch valve is closed, and after the system reaches the set condition, the precursor source bottle provides stable solid precursor source vapor for a vapor deposition cavity or a substrate in the deposition equipment so as to provide a stable gas source for the subsequent vapor deposition process.
Through the steps, the cleaning of the cavity inside the solid precursor source bottle and the communication pipeline outside the solid precursor source bottle can be realized, so that the whole vapor deposition process is prevented from being unstable, and each region can be well and uniformly heated, so that the problem that the solid precursor source in each region in the cavity is difficult to provide stable solid precursor source steam due to uneven heating is avoided.
The present invention has been described in detail with reference to the embodiments of the drawings, and those skilled in the art can make various modifications to the invention based on the above description. Accordingly, certain details of the illustrated embodiments are not to be taken as limiting the invention, which is defined by the appended claims.
Claims (9)
1. A thermally conductive structure of a precursor source vial, comprising: housing (1) with cavity (7), characterized in that it further comprises:
a heat conduction flow passage partition plate (8) arranged in the cavity (7);
The heat conduction flow passage partition plate (8) is arranged in the cavity (7) in a bending way and divides the cavity (7) into a plurality of heat conduction spaces;
The heat conduction space is used for placing a solid precursor source and enabling the solid precursor source to flow upwards after being heated to form solid precursor source steam;
The heat conduction flow passage partition plate (8) comprises: a plurality of convex sections (81) and concave sections (82) which are connected end to end in sequence, and a flat section (83) for connecting the convex sections (81) and the concave sections (82); and the length of the return bend path formed by the convex section (81) and the concave section (82) adjacent to each other gradually increases from one end of the inner wall connecting the cavity (7) toward one end of the inner wall facing away from the cavity (7).
2. The heat conducting structure of the precursor source bottle according to claim 1, wherein the heat conducting flow passage partition plate (8) is further provided with a through hole area; wherein the through holes (80) in the through hole area are distributed in a grid shape or in an array shape.
3. The heat conducting structure of the precursor source bottle according to claim 1, wherein a plurality of rows of through hole areas are formed on the heat conducting flow passage partition plate (8), the arrangement paths of the through hole areas of each row are in spiral arrangement, the through hole areas of the uppermost row are arranged below the adjacent air outlets, and the through hole areas of the lowermost row are arranged below the adjacent air inlets.
4. The heat conducting structure of the precursor source vessel according to claim 1, wherein the width of the heat conducting flow path partition plate (8) gradually decreases from one end connected to the inner wall of the chamber (7) toward one end facing away from the inner wall of the chamber (7).
5. The thermally conductive structure of a precursor source vial according to claim 1, wherein said thermally conductive flow channel separator (8) comprises: the heat conducting sections are connected to form, two adjacent heat conducting sections are made of different metals, and the heat conducting performance of each heat conducting section is gradually increased from one end of the inner wall of the cavity (7) to one end of the inner wall facing away from the cavity (7).
6. The heat conducting structure of the precursor source bottle according to claim 1, wherein at least two heat conducting runner partitions (8) are arranged in parallel at intervals; and, the protruding section (81) of one heat conduction flow passage partition board (8) corresponds to the concave section (82) of the other heat conduction flow passage partition board (8).
7. The heat conducting structure of the precursor source bottle according to any one of claims 1 to 6, wherein the heat conducting flow channel separator (8) is made of any one or more of silver, copper, aluminum and iron.
8. The thermally conductive structure of the precursor source vial of any one of claims 1-6, further comprising: a cover body (2) for sealing the cavity, a current-carrying gas pipe (9) penetrating through the cover body (2) and extending into the cavity, a gas outlet pipe (12) communicated with the cover body (2) and extending into the cavity, a communicating pipe (13) for communicating the current-carrying gas pipe (9) and the gas outlet pipe (12), a first valve (3) arranged on the current-carrying gas pipe (9), a second valve (4) arranged on the gas outlet pipe (12), and a third valve (5) arranged on the communicating pipe (13) and communicated with an external sweeping gas source; the end part of the shell (1) is provided with a sealing convex ring (11), and the cover body (2) is provided with a sealing groove sleeved by the sealing convex ring (11).
9. A method for controlling a heat conduction structure of a precursor source bottle, for controlling a heat conduction structure of a precursor source bottle as claimed in any one of claims 1 to 8, comprising:
carrying out gas purging treatment on the cavity (7) and a current carrying gas pipe (9) and a gas outlet pipe (12) which are communicated with the cavity (7);
And after the solid precursor source is arranged in the cavity (7), sealing the cavity, and heating the cavity so that the solid precursor source flows upwards along the heat conduction space after being heated to form solid precursor source steam.
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| CN202410391003.6A CN117966127B (en) | 2024-04-02 | 2024-04-02 | Heat conduction structure of precursor source bottle and control method |
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| CN113897593A (en) * | 2021-09-13 | 2022-01-07 | 浙江陶特容器科技股份有限公司 | Solid precursor source storage sublimator |
| CN115717681A (en) * | 2022-11-18 | 2023-02-28 | 浙江陶特半导体材料有限公司 | Steel cylinder for precursor solid source |
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| JP2007211346A (en) * | 2006-02-10 | 2007-08-23 | Tokyo Electron Ltd | Film precursor tray for use in film precursor evaporation system and method of using the same |
| JP2009526134A (en) * | 2006-02-10 | 2009-07-16 | 東京エレクトロン株式会社 | Film precursor evaporation system and method using the same |
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| CN117966127B (en) | 2024-06-25 |
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