CN117937235A - Circuit structure, driving circuit of semiconductor laser and laser radar transmitting module - Google Patents
Circuit structure, driving circuit of semiconductor laser and laser radar transmitting module Download PDFInfo
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- CN117937235A CN117937235A CN202211291271.8A CN202211291271A CN117937235A CN 117937235 A CN117937235 A CN 117937235A CN 202211291271 A CN202211291271 A CN 202211291271A CN 117937235 A CN117937235 A CN 117937235A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 238000007599 discharging Methods 0.000 claims abstract description 52
- 239000003990 capacitor Substances 0.000 claims description 27
- 238000004146 energy storage Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 230000005669 field effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/484—Transmitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0068—Battery or charger load switching, e.g. concurrent charging and load supply
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application provides a circuit structure, a driving circuit of a semiconductor laser and a laser radar transmitting module. The circuit structure comprises: a charging circuit and a discharging circuit; the input end of the charging circuit is connected with a preset power supply, and the output end of the charging circuit is connected with the discharging circuit; the discharge circuit is also connected with the anode of the semiconductor laser, and the cathode of the semiconductor laser is grounded; the charging circuit is disposed on the first circuit board, and the discharging circuit and the semiconductor laser are disposed on the second circuit board. The application can meet the requirement of high pulse current of the semiconductor laser and can also avoid the problem of insufficient reliability caused by the influence of high temperature on the semiconductor laser.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a circuit structure, a driving circuit of a semiconductor laser and a laser radar transmitting module.
Background
With the development of unmanned and machine vision, laser radars have also been developed rapidly. For the laser radar transmitting module, in practical application, the laser radar transmitting module often has application requirements of high peak power, narrow pulse width, high stability, high reliability, high frequency, small volume, low cost and the like.
The driving circuit is used as an important component of the laser radar transmitting module and mainly provides pulse driving current for the semiconductor laser to drive the semiconductor laser to work so as to form light pulses. For high power semiconductor lasers, a large pulsed drive current is required. If a large pulse current is required to be generated, a charge-discharge circuit is required to be used in the driving circuit to provide a large pulse driving current for the semiconductor laser. In the prior art, the driving circuit mainly adopts a single circuit board design, namely, all circuit units in the driving circuit are arranged on the same circuit board.
Although the driving circuit including the charge-discharge circuit is designed on the same circuit board to meet the requirement of the driving current of the semiconductor laser, so that the laser pulse energy is well controlled, the heat power consumption caused by the charge-discharge circuit is very high, and a large amount of heat generated by the heat is conducted to the area where the semiconductor laser is located on the circuit board, so that the temperature of the area where the semiconductor laser is located is increased, the performance of the semiconductor laser is affected, and the reliability risk is increased.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a circuit structure, a driving circuit of a semiconductor laser and a laser radar transmitting module, so that the problem of insufficient reliability caused by the influence of high temperature on the semiconductor laser is avoided under the condition that the requirement of high pulse current of the semiconductor laser is met.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:
In a first aspect, an embodiment of the present invention provides a circuit structure, including: a charging circuit and a discharging circuit; the input end of the charging circuit is connected with a preset power supply, and the output end of the charging circuit is connected with the discharging circuit; the discharge circuit is also connected with the anode of the semiconductor laser, and the cathode of the semiconductor laser is grounded;
Wherein the charging circuit is disposed on a first circuit board, and the discharging circuit and the semiconductor laser are disposed on a second circuit board.
In one possible implementation manner, the first circuit board and the second circuit board are two circuit boards separately arranged in physical space;
the charging circuit and the discharging circuit are electrically connected through flexible wires.
In a second aspect, an embodiment of the present invention provides a driving circuit of a semiconductor laser, including: the circuit structure provided in the first aspect further includes: a semiconductor laser, a switching unit, and a signal processing circuit;
The input end of the signal processing circuit is used for receiving a preset pulse signal, and the output end of the signal processing circuit is connected with the control end of the switch unit; the input end of the switch unit is connected with the cathode of the semiconductor laser, and the output end of the switch unit is grounded;
the input end of a charging circuit in the circuit structure is connected with a preset power supply, the output end of the charging circuit is connected with the discharging circuit, and the discharging circuit in the circuit structure is also connected with the anode of the semiconductor laser to supply power for the anode of the semiconductor laser;
The charging circuit is arranged on the first circuit board, and the discharging circuit, the semiconductor laser, the switching unit and the signal processing circuit are arranged on the second circuit board.
In one possible implementation, the first circuit board is disposed outside the housing of the lidar transmission module, and the second circuit board is disposed inside the housing of the lidar transmission module.
In another possible implementation manner, the driving circuit further includes: the temperature control unit is arranged between the second circuit board and the bottom plate.
In yet another possible implementation, the second circuit board is a circuit board of an aluminum nitride ceramic substrate.
In yet another possible implementation, the charging circuit includes: the charging circuit comprises a charging resistor and a filter capacitor, wherein a preset power supply is grounded through the filter capacitor, the preset power supply is also connected with one end of the charging resistor, one end of the charging resistor is an input end of the charging circuit, and the other end of the charging resistor is an output end of the charging circuit.
In yet another possible implementation, the charging resistor is a plurality of resistors connected in parallel.
In yet another possible implementation, the discharge circuit includes: the semiconductor laser comprises an energy storage capacitor, wherein one end of the energy storage capacitor is connected with the output end of the charging circuit, the other end of the energy storage capacitor is grounded, and one end of the energy storage capacitor is also connected with the anode of the semiconductor laser.
In a third aspect, an embodiment of the present application further provides a lidar transmitting module, including the driving circuit of any one of the second aspects, further including: an optical element provided on the light-emitting side of the semiconductor laser.
The beneficial effects of the application are as follows:
In the circuit structure, the driving circuit of the semiconductor laser and the laser radar transmitting module, the charging circuit and the discharging circuit in the circuit structure are matched with each other, so that the requirement of pulse current of the semiconductor laser is met, the high peak power and the narrow pulse width of the semiconductor laser are realized, the charging circuit in the circuit structure is arranged on the first circuit board, the discharging circuit in the circuit structure and the second circuit board are arranged, the charging circuit with main heat consumption in the circuit structure and the discharging circuit are arranged separately, the conduction of heat generated by the charging circuit to the discharging circuit is limited, the heat conduction of the heat to the semiconductor laser is limited, the problem of insufficient reliability of the semiconductor laser due to the influence of high temperature is avoided as far as possible, and the high reliability and the high stability of the semiconductor laser are realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a circuit structure according to an embodiment of the present application;
Fig. 2 is a schematic structural diagram of a driving circuit of a semiconductor laser according to an embodiment of the present application;
Fig. 3 is a schematic structural diagram of a driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a driving circuit of another semiconductor laser according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a laser radar transmitting module according to an embodiment of the present application;
fig. 6 is a schematic diagram of a lidar system according to an embodiment of the present application.
Icon:
11-a charging circuit; 12-a discharge circuit; 13-a semiconductor laser; 14-a switching unit; 15-a signal processing circuit; a-a first circuit board; b-a second circuit board; 16-soft flat cable; 17-a temperature control unit; 18-an optical element; r1 is a charging resistor; c1-a filter capacitor; c2-an energy storage capacitor; l1-inductance; v1-a driving chip; q1-a switching tube; 51-a driving circuit; 60-lidar systems; 61-a laser radar transmitting module; 62-a laser radar receiving module.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention.
It should be noted that the terms "comprises" and "comprising," along with any variations thereof, in the various portions of the embodiments of the application and in the figures are intended to cover non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
The circuit structure, the driving circuit of the semiconductor laser and the laser radar transmitting module provided by the embodiments of the application mainly aim at the semiconductor laser with high power, such as the semiconductor laser with 905 nm. The circuit configuration provided by the embodiment of the present application will be explained in the following by way of examples in connection with a plurality of embodiments.
Fig. 1 is a schematic structural diagram of a circuit structure according to an embodiment of the present application. As shown in fig. 1, the circuit structure includes: a charging circuit 11, and a discharging circuit 12.
The input end of the charging circuit 11 is connected with a preset power supply, the output end of the charging circuit is connected with the discharging circuit 12, the discharging circuit 12 is also connected with the anode of the semiconductor laser 13, and the cathode of the semiconductor laser 13 is grounded. The charging circuit 11 is provided on the first circuit board a, and the discharging circuit 12, the semiconductor laser 13, the switching unit 14, and the signal processing circuit 15 are provided on the second circuit board B.
In this embodiment, the semiconductor laser 13 may also be referred to as a laser chip or a Laser Diode (LD) chip, and may be, for example, an edge-emitting laser diode (EDGE EMITTING LASER-laser diode, EEL-LD) or an edge-emitting laser (EDGE EMITTING LASER, EEL).
The circuit structure is actually a charging and discharging circuit or a power supply of the semiconductor laser 13, the energy storage unit in the discharging circuit 12 can be charged by a preset power supply through the charging circuit 11, and then the discharging circuit 12 discharges to the anode of the semiconductor laser 13 so as to provide pulse current for the anode of the semiconductor laser 13, thereby realizing power supply of the semiconductor laser 13.
As a main heat load in the circuit structure, the heat consumption generated by the charging circuit 11 is far greater than that generated by the discharging circuit and other circuits, so as to avoid the influence of the heat conduction of the part of the heat consumption generated by the charging circuit 11 on the area where the semiconductor laser 13 is located, in the scheme provided in this embodiment, the charging circuit 11 and the discharging circuit 12 may be decoupled, the charging circuit 11 and other parts (the discharging circuit 12, the semiconductor laser 13, etc.) are respectively arranged on two different circuit boards, and the heat conduction between the charging circuit 11 and other parts is limited, thereby limiting the heat conduction of the heat consumption generated by the charging circuit 11 to the area where the semiconductor laser 13 is located.
In one possible implementation example, the first circuit board a and the second circuit board B may be two circuit boards that are physically and spatially separated from each other, respectively. The charging circuit and the discharging circuit are electrically connected through flexible wires. The flexible wires may also be referred to as flex wires.
In the scheme provided by the embodiment, the charging circuit and the discharging circuit in the circuit structure are matched with each other, so that the requirement of pulse current of the semiconductor laser is met, the high peak power and the narrow pulse width of the semiconductor laser are realized, the charging circuit in the circuit structure is arranged on the first circuit board, the discharging circuit in the circuit structure is arranged on the second circuit board where the semiconductor laser is arranged, the charging circuit with main heat consumption in the circuit structure is realized, and the other circuit structures such as the discharging circuit and the semiconductor laser are arranged separately, so that the conduction of heat generated by the charging circuit to the discharging circuit is limited, the heat conduction of the heat to the semiconductor laser is limited, the problem of insufficient reliability of the semiconductor laser due to the influence of high temperature is avoided as far as possible, and the high reliability and the high stability of the semiconductor laser are realized.
The embodiments of the present application will be explained with reference to a plurality of drawings for providing a driving circuit of a semiconductor laser. Fig. 2 is a schematic diagram of a driving circuit of a semiconductor laser according to an embodiment of the present application. As shown in fig. 2, the driving circuit of the semiconductor laser includes: the circuit structures provided in the above embodiments, that is, the charging circuit 11 and the discharging circuit 12, may further include: a semiconductor laser 13, a switching unit 14, and a signal processing circuit 15.
The input end of the signal processing circuit 15 is used for receiving a preset pulse signal, and the output end of the signal processing circuit is connected with the control end of the switch unit 14; an input end of the switching unit 14 is connected with a cathode of the semiconductor laser 13, and an output end of the switching unit 14 is grounded. The input end of the charging circuit 11 is connected with a preset power supply, the output end of the charging circuit is connected with the discharging circuit 12, and the discharging circuit 12 is also connected with the anode of the semiconductor laser 13 to supply power to the anode of the semiconductor laser 13.
The charging circuit 11 is provided on the first circuit board a, and the discharging circuit 12, the semiconductor laser 13, the switching unit 14, and the signal processing circuit 15 are provided on the second circuit board B.
The preset power supply may supply a pulse current to the anode of the semiconductor laser 13 through charge and discharge of the charge circuit 11 and the discharge circuit 12, and the cathode of the semiconductor laser 13 is grounded. Therefore, both the charge of the charge circuit 11 and the discharge of the discharge circuit 12 are controlled by the on-off of the switching unit 14 provided between the cathode of the semiconductor laser 13 and the ground.
Specifically, if the switching unit 14 is in a non-conductive state, the path between the cathode of the semiconductor laser 13 and the ground is disconnected, and at this time, the preset power source can charge the energy storage unit in the discharging circuit 12 through the charging circuit 11. Accordingly, if the switching unit 14 is in the on state, the path between the cathode of the semiconductor laser 13 and the ground is turned on, and at this time, the discharge circuit 12 can discharge to the anode of the semiconductor laser 13.
The on-off state of the switching unit 14 may be controlled by the signal processing circuit 15 based on the input preset pulse signal.
Since the turn-on speed of the charging circuit 11 depends on the on-off state of the switching unit 14, the switching frequency of the switching unit 14 is 10KHz-100KHz, and when the frequency of the switching unit 14 is the maximum value (100 KHz), the charging time corresponding to the charging circuit 11 is about 10us; the on state of the discharge circuit 12 depends on the on-off state of the switch unit 14, the on rate of the discharge circuit 12 depends on the on time of the switch unit 14, the on time of the switch unit 14 is about 1ns, the frequency corresponding to the on time is 1GHz, the total time required for discharging the discharge circuit 12 is about 5ns, and the corresponding frequency is 200MHz; the charging circuit 11 may also be referred to as a low-speed circuit or low-speed loop (10 KHz-100 KHz); accordingly, the discharge circuit 12 may also be referred to as a high-speed circuit or high-speed loop (200 MHz-1 GHz).
In the process of supplying power to the anode of the semiconductor laser 13 from the preset power supply, the charging circuit 11 acts as a main thermal load in the driving circuit, and the generated heat may reach 90% of the total generation of the driving circuit. Taking a 905nm semiconductor laser as an example, the peak power of the semiconductor laser needs to be greater than or equal to 800W, and in order to reach the peak power of 800W, since the electro-optical conversion efficiency of the 905nm semiconductor laser is about 3.5W/a, the driving circuit needs to provide 228.6A of pulse current for the anode of the semiconductor laser. Assuming that the switching frequency f of the switching unit is equal to 100KHz and the peak power is 800W, the power consumption of the charging circuit 11 in the driving circuit is 90% and about 7W, and the thermal power consumption generated in the other parts of the driving circuit is about 10% and is close to 0.77W, for supplying the pulse current of 228.6A. In order to avoid the influence of the main heat load in the driving circuit, i.e. the heat power consumption generated by the charging circuit 11, on the area where the semiconductor laser 13 is located, in the scheme provided in this embodiment, besides decoupling the charging circuit 11 and the discharging circuit 12 in the driving circuit, the separation of the charging circuit 11 and the discharging circuit 12 is realized, and the charging circuit 11 and other parts (the discharging circuit 12, the semiconductor laser 13, the switching unit 14 and the signal processing circuit 15) are respectively arranged on two circuit boards, so that the heat conduction between the charging circuit 11 and the other parts is limited.
In the driving circuit of the semiconductor laser provided by the embodiment, the charging circuit and the discharging circuit in the driving circuit are mutually matched, so that the requirement of pulse current of the semiconductor laser is met, the high peak power and narrow pulse width of the semiconductor laser are realized, the discharging circuit, the semiconductor laser, the switching unit and the signal processing circuit in the driving circuit are arranged on the first circuit board, the discharging circuit, the semiconductor laser, the switching unit and the signal processing circuit in the driving circuit are arranged on the second circuit board, the charging circuit with main heat consumption in the driving circuit and other units are respectively arranged, the heat generated by the charging circuit is limited to conduct heat to the semiconductor laser, the problem of insufficient reliability of the semiconductor laser due to the influence of high temperature is avoided as far as possible, and the high reliability and high stability of the semiconductor laser are realized.
It should be noted that, in one example, the first circuit board a and the second circuit board B may be two different circuit boards located in the same physical space, for example, they may be two different circuit boards in the housing of the lidar transmitting module, respectively.
In another example, the first circuit board a and the second circuit board B may be two circuit boards that are separately disposed in physical space, that is, the first circuit board a may be a circuit board disposed outside the housing of the lidar transmitting module, and the second circuit board B may be a circuit board disposed inside the housing of the lidar transmitting module, which may be a driving circuit board inside the housing of the lidar transmitting module.
The specific arrangement of the circuit board is explained below with reference to the drawings. Fig. 3 is a schematic diagram of a driving circuit of another semiconductor laser according to an embodiment of the present application. As shown in fig. 3, the first circuit board a and the second circuit board B shown above are two circuit boards disposed outside and inside the housing of the lidar transmission module, respectively.
In a specific embodiment, assuming that the switching frequency f of the switching unit is equal to 100KHz and the peak power is 800W, in order to provide a pulse current of 228.6A, the heat power consumption of the charging circuit 11 is about 7W, and the volume of a single resistor in the charging circuit meeting the 7W power consumption is huge.
In the scheme of the embodiment, the main heating load in the driving circuit, namely the charging circuit, is arranged on the circuit board outside the shell of the laser radar transmitting module, and other parts in the driving circuit are arranged on the circuit board in the shell, so that the separation setting of the charging circuit and the semiconductor laser is realized, the influence of the heat consumption of the charging circuit on the area where the semiconductor laser is located is reduced, and the volume of the laser radar transmitting module is also reduced.
With continued reference to fig. 3, the components on the first circuit board a may be connected to corresponding components on the second circuit board B by flexible wires 16, also known as flex wires. That is, the charging circuit 11 on the first circuit board a may be connected to the discharging circuit 12 on the second circuit board B through the flexible flat cable 16.
It should be noted that, in order to implement the electrical connection between the components on the first circuit board a and the second circuit board B, other types of connection lines may be implemented instead of the flexible flat cable 16, which should not be taken as a limitation in the present embodiment.
The corresponding components on the first circuit board and the second circuit board are connected in a soft flat cable mode, so that the layout of each circuit unit in the driving circuit is more flexible, and the size of the laser radar transmitting module is effectively ensured.
In a possible implementation example, referring to fig. 3, the driving circuit further includes; temperature control unit 17 and bottom plate, temperature control unit 17 sets up between second circuit board B and bottom plate. The temperature control unit 17 may be a temperature controller (TEC), or a temperature control chip. For example, the discharge circuit 12, the semiconductor laser 13, the switching unit 14, and the driving chip V1 may be disposed on a first surface on the second circuit board B, and the temperature control unit 17 is disposed between the second surface and the bottom plate, wherein the second surface is a surface facing away from the first surface on the second circuit board B.
The temperature control unit 17 can be used for performing overall temperature control on the discharge circuit 12, the semiconductor laser 13, the switch unit 14, the driving chip V1 and the like which are arranged on the second circuit board B, so that the working temperature of the semiconductor laser is not changed along with the change of the environmental temperature as much as possible, and the working stability and reliability of the semiconductor laser are ensured. Meanwhile, the main heat load in the driving circuit, namely the charging circuit, is arranged on the other circuit board, namely the first circuit board, so that the whole temperature control of the laser radar transmitting module can be easy, only the second circuit board where the discharging circuit is arranged is needed to be subjected to the whole temperature control, and the heat power consumption of the discharging circuit is only 10% of the whole heat power consumption. Since the volume of the temperature control unit is determined by the heat load, the smaller the volume of the temperature control unit is required, and the lower the cost of the temperature control unit.
Therefore, according to the scheme of the embodiment, the temperature control unit is arranged between the second circuit board and the bottom plate, so that the volume of the temperature control unit can be effectively reduced, and the volume and cost of the whole laser radar transmitting module are reduced.
With continued reference to fig. 3, the laser radar transmitting module further includes an optical element 18 in the housing, and the optical element 18 is disposed on the light emitting side of the semiconductor laser 13.
In some possible implementation examples, the circuit board on which the semiconductor laser 13 is located, i.e., the second circuit board B may be a circuit board of an aluminum nitride (AlN) ceramic substrate. The semiconductor laser 13 may be directly packaged on the second circuit board B. It should be noted that the specific material of the first circuit board a is not limited in the embodiment of the present application, and may be a circuit board of an aluminum nitride (AlN) ceramic substrate, or a circuit board of another material substrate, such as an epoxy resin substrate.
In the scheme provided by the embodiment, for the circuit board where the semiconductor laser is located, namely the second circuit board, the circuit board adopting the aluminum nitride ceramic substrate is convenient for radiating heat on the second circuit board because the heat conducting property of the aluminum nitride ceramic substrate is higher, thereby ensuring the stability of the wavelength, directivity and divergence angle of the semiconductor laser and improving the high reliability and high stability of the transmitting module.
On the basis of the driving circuit of the semiconductor laser provided in any one of the above embodiments, this embodiment also provides some other possible implementation examples of the driving circuit of the semiconductor laser in combination with the specific structure of each circuit unit in the driving circuit. Fig. 4 is a schematic structural diagram of a driving circuit of another semiconductor laser according to an embodiment of the present application. In addition to any of the above embodiments, the charging circuit 11 includes: a charging resistor R1 and a filter capacitor C1. The preset power supply is grounded through the filter capacitor C1, the preset power supply is also connected with one end of the charging resistor R1, one end of the charging resistor R1 is an input end of the charging circuit 11, and the other end of the charging resistor R1 is an output end of the charging circuit.
It should be noted that, in fig. 4, the charging resistor R1 is only a resistor unit, and the specific composition of the charging resistor R1 is not limited, and may be a single resistor, or may be a resistor unit formed by connecting a plurality of resistors in series or in parallel, which is not limited in this embodiment.
In one example implementation, the charging resistor R1 may be a plurality of resistors connected in parallel. The resistance value of each resistor may be less than or equal to a preset resistance, or the power consumption of each resistor may be less than or equal to a preset power consumption.
Continuing with the example of a 905nm semiconductor laser, to achieve peak power of 800W, charging resistor R1 may be a resistive element with a power consumption of about 7W, and in a specific implementation example, the resistive element with 7W may be implemented by a plurality of resistors with a power consumption of 0.5W in parallel, for example. While the volume of a single resistor meeting 7W power consumption is generally very large, the volume of a single resistor with power consumption of 0.5W is relatively small, and even if a plurality of small resistors are connected in parallel, the total volume is much smaller than that of a resistor with 7W power consumption.
The charging resistor R1 is realized by adopting a plurality of resistors which are connected in parallel so as to meet the high peak power of the semiconductor laser, and compared with the independent charging realization scheme, the charging resistor R1 has the advantages that the resistor is small in resistance value or small in power consumption, the volume of the charging resistor is reduced, and the volume of a driving circuit is reduced.
With continued reference to fig. 4, the discharge circuit 12 includes: and one end of the energy storage capacitor C2 is connected with the output end of the charging circuit 11, the other end of the energy storage capacitor C2 is grounded, and one end of the energy storage capacitor C2 is also connected with the anode of the semiconductor laser 13.
Similarly to the charging resistor R1, the energy storage capacitor C2 in fig. 4 is only a capacitor unit, and the specific composition of the energy storage capacitor C2 is not limited, and may be a single capacitor, or may be a capacitor unit formed by connecting a plurality of capacitors in series or in parallel.
Optionally, the discharging circuit 12 may further include: one end of the energy storage capacitor C2 is connected with one end of the inductor L1, and the other end of the inductor L1 is connected with the anode of the semiconductor laser 13. The inductance L1 and the storage capacitor C2 constitute an LC resonance circuit.
Optionally, with continued reference to fig. 4, the signal processing circuit 15 includes: the control end of the driving chip V1 is the input end of the signal processing circuit 15, the output end of the driving chip V1 is the output end of the signal processing circuit 15, and the input end of the driving chip V1 is grounded.
The driving chip V1 may be a driving chip matched by the switching unit 14. If the switching unit 14 includes a switching transistor Q1, the switching transistor Q1 is a gallium nitride field effect transistor (GaN FET) Q1 shown in fig. 4, the driving chip V1 may be a gate driver (GATE DRIVER). Taking a gan field effect transistor as an example, the control end of the switching unit 14 may be a gate of the gan field effect transistor, the input end of the switching unit 14 may be a drain of the gan field effect transistor, and the output end of the switching unit 14 may be a source of the gan field effect transistor. It should be noted that, in practical application, the switching unit 14 may be other similar transistors, and the driving control of the switching unit 14 may be implemented as long as the driving chip V1 is matched with the same.
On the basis of the driving circuit of the semiconductor laser provided in any embodiment, the embodiment of the application also provides a laser radar transmitting module. Fig. 5 is a schematic diagram of a laser radar transmitting module according to an embodiment of the present application. As shown in fig. 5, the lidar emission module may include a driving circuit 51 of the semiconductor laser according to any of the above embodiments, and an optical element 18 disposed on the light emitting side of the semiconductor laser.
The driving circuit 51 and the optical module provided on the light emitting side of the semiconductor laser together form a lidar emission module.
The embodiment of the application provides a laser radar system. Fig. 6 is a schematic diagram of a lidar system according to an embodiment of the present application. As shown in fig. 6, the lidar system 60 includes: the laser radar transmitting module 61 and the laser radar receiving module 62 matched with the same are provided.
The lidar system 60 provided in this embodiment may be applied to a vehicle-mounted system, as a vehicle-mounted lidar, or may be applied to a machine vision system, as an airborne radar system equipped on a robot or on industrial equipment.
The laser radar transmitting module and the laser radar system with the driving circuit of the semiconductor laser shown in any of the above embodiments can achieve the effects of the driving circuit of the semiconductor laser shown in any of the above embodiments, and specifically refer to the above, and the embodiments of the present application will not be repeated.
The foregoing is merely illustrative of embodiments of the present application, and the present application is not limited thereto, and any changes or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and the present application is intended to be covered by the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A circuit structure, the circuit structure comprising: a charging circuit and a discharging circuit; the input end of the charging circuit is connected with a preset power supply, and the output end of the charging circuit is connected with the discharging circuit; the discharge circuit is also connected with the anode of the semiconductor laser, and the cathode of the semiconductor laser is grounded;
Wherein the charging circuit is disposed on a first circuit board, and the discharging circuit and the semiconductor laser are disposed on a second circuit board.
2. The circuit structure of claim 1, wherein the first circuit board and the second circuit board are two circuit boards separately disposed in physical space;
the charging circuit and the discharging circuit are electrically connected through flexible wires.
3. A driving circuit of a semiconductor laser, comprising: the circuit structure of claim 1 or 2, further comprising: a semiconductor laser, a switching unit, and a signal processing circuit;
The input end of the signal processing circuit is used for receiving a preset pulse signal, and the output end of the signal processing circuit is connected with the control end of the switch unit; the input end of the switch unit is connected with the cathode of the semiconductor laser, and the output end of the switch unit is grounded;
the input end of a charging circuit in the circuit structure is connected with a preset power supply, the output end of the charging circuit is connected with the discharging circuit, and the discharging circuit in the circuit structure is also connected with the anode of the semiconductor laser to supply power for the anode of the semiconductor laser;
The charging circuit is arranged on the first circuit board, and the discharging circuit, the semiconductor laser, the switching unit and the signal processing circuit are arranged on the second circuit board.
4. The drive circuit of claim 3, wherein the first circuit board is disposed outside a housing of the lidar transmission module and the second circuit board is disposed inside the housing of the lidar transmission module.
5. A driver circuit according to claim 3, wherein the driver circuit further comprises: the temperature control unit is arranged between the second circuit board and the bottom plate.
6. A driving circuit according to claim 3, wherein the second circuit board is a circuit board of an aluminum nitride ceramic substrate.
7. A driving circuit according to claim 3, wherein the charging circuit comprises: the charging circuit comprises a charging resistor and a filter capacitor, wherein a preset power supply is grounded through the filter capacitor, the preset power supply is also connected with one end of the charging resistor, one end of the charging resistor is an input end of the charging circuit, and the other end of the charging resistor is an output end of the charging circuit.
8. The drive circuit of claim 7, wherein the charging resistor is a plurality of resistors connected in parallel.
9. A driving circuit according to claim 3, wherein the discharge circuit comprises: the semiconductor laser comprises an energy storage capacitor, wherein one end of the energy storage capacitor is connected with the output end of the charging circuit, the other end of the energy storage capacitor is grounded, and one end of the energy storage capacitor is also connected with the anode of the semiconductor laser.
10. A lidar transmission module comprising the drive circuit of any of claims 3-9, further comprising: an optical element provided on the light-emitting side of the semiconductor laser.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211291271.8A CN117937235A (en) | 2022-10-17 | 2022-10-17 | Circuit structure, driving circuit of semiconductor laser and laser radar transmitting module |
| PCT/CN2023/107436 WO2024082726A1 (en) | 2022-10-17 | 2023-07-14 | Circuit structure, driving circuit of semiconductor laser, and laser radar transmitting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211291271.8A CN117937235A (en) | 2022-10-17 | 2022-10-17 | Circuit structure, driving circuit of semiconductor laser and laser radar transmitting module |
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| Publication Number | Publication Date |
|---|---|
| CN117937235A true CN117937235A (en) | 2024-04-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211291271.8A Pending CN117937235A (en) | 2022-10-17 | 2022-10-17 | Circuit structure, driving circuit of semiconductor laser and laser radar transmitting module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN117937235A (en) |
| WO (1) | WO2024082726A1 (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2277192B (en) * | 1990-06-20 | 1995-01-11 | Mitsubishi Electric Corp | Discharge-excited laser apparatus |
| KR100943594B1 (en) * | 2006-03-27 | 2010-02-24 | 삼성에스디아이 주식회사 | Single unit protection circuit module and battery pack using it |
| CN209389446U (en) * | 2018-12-20 | 2019-09-13 | 北京万集科技股份有限公司 | A kind of semiconductor laser device driving circuit and laser radar |
| CN214754672U (en) * | 2020-12-15 | 2021-11-16 | 武汉万集信息技术有限公司 | Laser drive circuit, laser radar transmission module and laser radar |
| CN112821191A (en) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | Semiconductor laser drive circuit, multi-line laser and multi-line laser radar |
| CN113922206A (en) * | 2021-10-09 | 2022-01-11 | 探维科技(北京)有限公司 | Laser radar transmitting device and method |
| CN116742470A (en) * | 2022-03-01 | 2023-09-12 | 西安炬光科技股份有限公司 | Power supply driving circuit of semiconductor laser and laser radar transmitting module |
-
2022
- 2022-10-17 CN CN202211291271.8A patent/CN117937235A/en active Pending
-
2023
- 2023-07-14 WO PCT/CN2023/107436 patent/WO2024082726A1/en unknown
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| Publication number | Publication date |
|---|---|
| WO2024082726A1 (en) | 2024-04-25 |
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