CN116742470A - Power supply driving circuit of semiconductor laser and laser radar transmitting module - Google Patents
Power supply driving circuit of semiconductor laser and laser radar transmitting module Download PDFInfo
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- CN116742470A CN116742470A CN202210195565.4A CN202210195565A CN116742470A CN 116742470 A CN116742470 A CN 116742470A CN 202210195565 A CN202210195565 A CN 202210195565A CN 116742470 A CN116742470 A CN 116742470A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 239000003990 capacitor Substances 0.000 claims abstract description 96
- 238000004146 energy storage Methods 0.000 claims abstract description 42
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 31
- 238000007493 shaping process Methods 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000000087 stabilizing effect Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 101100134058 Caenorhabditis elegans nth-1 gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/484—Transmitters
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application provides a power supply driving circuit of a semiconductor laser and a laser radar transmitting module, wherein the power supply driving circuit comprises: the semiconductor laser comprises a plurality of driving chips, a plurality of switching tubes, a semiconductor laser and an energy storage capacitor; the input ends of the driving chips are used for receiving preset pulse signals, and the output ends of the driving chips are respectively connected with the control ends of the switching tubes so as to control the on-off of the switching tubes according to the preset pulse signals; the input ends of the switch tubes are connected with the cathodes of the semiconductor lasers, and the output ends of the switch tubes are grounded; the first power supply is connected with the energy storage capacitor, the other end of the energy storage capacitor is grounded, and one end of the energy storage capacitor is also connected with the anode of the semiconductor laser to supply power for the anode of the semiconductor laser. The application can reduce the volume and cost of the power supply driving circuit under the condition of ensuring the high peak power requirement of the semiconductor laser.
Description
Technical Field
The application relates to the technical field of electronic circuits, in particular to a power supply driving circuit of a semiconductor laser and a laser radar transmitting module.
Background
With the development of unmanned and machine vision, laser radars have also been rapidly developed, and in particular, high-power semiconductor laser radars have been widely used.
However, high power semiconductor lasers all require a drive circuit that provides a high pulse current, and for high power semiconductor lasers, the peak power of a single semiconductor laser needs to be around 800W-1000W to meet market application requirements. The peak power of the high-power semiconductor laser on the market at present can only reach 300W-500W, and a single product can not meet the actual application requirements and can only reach the peak power requirement through parallel connection of a plurality of products. However, in practical applications, if a plurality of semiconductor lasers are connected in parallel, the size and cost of the power driving circuit will be increased.
Therefore, how to realize the high peak power requirement of the semiconductor laser at low cost is a problem to be solved.
Disclosure of Invention
The application aims to overcome the defects in the prior art and provide a power supply driving circuit and a laser radar transmitting module of a semiconductor laser, so that the volume and the cost of the power supply driving circuit are reduced under the condition of ensuring the high peak power requirement of the semiconductor laser.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the application is as follows:
in a first aspect, an embodiment of the present application provides a power supply driving circuit of a semiconductor laser, including: the semiconductor laser comprises a plurality of driving chips, a plurality of switching tubes, a semiconductor laser and an energy storage capacitor;
the input ends of the driving chips are used for receiving preset pulse signals, and the output ends of the driving chips are respectively connected with the control ends of the switching tubes so as to control the on-off of the switching tubes according to the preset pulse signals; the input ends of the switch tubes are connected with the cathodes of the semiconductor lasers, and the output ends of the switch tubes are grounded;
the first power supply is connected with one end of the energy storage capacitor, the other end of the energy storage capacitor is grounded, and one end of the energy storage capacitor is also connected with the anode of the semiconductor laser so as to supply power for the anode of the semiconductor laser.
In one possible implementation, the power supply driving circuit further includes: and the first power supply is connected with one end of the energy storage capacitor through the charging resistor.
In another possible implementation manner, the charging resistor includes: and the resistors are connected in parallel and then connected between the first power supply and one end of the energy storage capacitor.
In yet another possible implementation manner, the energy storage capacitor includes: the first ends of the capacitors are connected in parallel and are connected with the first power supply, the first ends of the capacitors are also connected with the anode of the semiconductor laser, and the second ends of the capacitors are grounded.
In yet another possible implementation, the semiconductor laser is a bare chip with multiple channels, where each channel is packaged with multiple gold wires bonded in parallel.
In yet another possible implementation manner, the power supply driving circuit is laid out on a multi-layer circuit board, wherein the charging resistor in the power supply driving circuit is placed on a bottom layer circuit board in the multi-layer circuit board, and other components except for the charging resistor in the power supply driving circuit are placed on a top layer circuit board in the multi-layer circuit board.
In another possible implementation manner, the top circuit board is provided with a plurality of first through holes, and wires between the output ends of the plurality of driving chips and the control ends of the plurality of switching tubes are arranged on the second layer circuit board through the first through holes to form a current loop between the top circuit board and the second layer circuit board;
the second layer of circuit board is a circuit board which is close to the top layer of circuit board in the multilayer circuit board.
In yet another possible implementation manner, the ground trace of the other component sequentially passes through the plurality of second vias on the top circuit board and the plurality of vias on the second circuit board are disposed on a third circuit board, where the third circuit board is a circuit board in the multilayer circuit board that is close to the bottom circuit board.
In yet another possible implementation manner, the plurality of driving chips and the plurality of switching tubes are vertically disposed on the top circuit board, and an output end of each driving chip is close to a control end of one switching tube.
In a second aspect, an embodiment of the present application provides a lidar transmitting module, including the power supply driving circuit according to any one of the first aspect.
The beneficial effects of the application are as follows:
in the power supply driving circuit and the laser radar transmitting module of the semiconductor laser, the plurality of switching tubes connected to the cathode of the semiconductor laser are respectively driven by the plurality of driving chips, so that the opening speed of each switching tube can be effectively ensured, the input ends of the plurality of switching tubes are connected with the cathode of the semiconductor laser, namely, the cathodes of the semiconductor laser are driven and controlled in a parallel connection mode, the overcurrent capacity and the heat dissipation capacity of the switching tubes are effectively improved, and meanwhile, the parasitic inductance caused by the packaging of the switching tubes is reduced, so that the size of the driving current provided by the energy storage capacitor for the anode of the semiconductor laser is effectively improved, the high driving current and the narrow pulse width of the semiconductor laser are realized, the high peak power of the semiconductor laser is ensured, the laser radar power requirement is met, the peak power of the single semiconductor laser is also greatly improved, and the size and the cost of the power supply driving circuit are also reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a power driving circuit of a semiconductor laser according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a charging resistor in a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of an energy storage capacitor in a power driving circuit of a semiconductor laser according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a shaping circuit in a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 8 is a schematic diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 9 is a schematic diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 10 is a schematic diagram of a voltage stabilizing circuit in a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 11 is a schematic structural diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application;
fig. 12 is a schematic diagram of a multi-layer circuit board with a power driving circuit of a semiconductor laser according to an embodiment of the present application;
fig. 13 is a schematic layout diagram of a power driving circuit of a semiconductor laser on a bottom circuit board according to an embodiment of the present application;
fig. 14 is a schematic layout diagram of a power driving circuit of a semiconductor laser on a top circuit board according to an embodiment of the present application;
fig. 15 is a schematic diagram of a current loop between a second layer circuit board and a first layer circuit board in a multi-layer circuit board according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application.
It should be noted that the terms "comprises" and "comprising," along with any variations thereof, in the various portions of the embodiments of the application and in the figures are intended to cover non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
The method flowcharts of the following embodiments of the present application are merely exemplary and do not necessarily include all of the content and steps nor must they be performed in the order described. For example, some steps may be decomposed, and the steps may be combined or partially combined, so that the order of actual execution may be changed according to actual situations.
The functional blocks in the block diagrams according to the embodiments of the present application are merely functional entities, and do not necessarily correspond to physically separate entities. That is, the functional entities may be implemented in software, or in one or more physical modules or integrated circuits, or in different networks and/or processors and/or microcontrollers.
The power supply driving circuit of the semiconductor laser and the laser radar transmitting module provided by the application mainly aim at the semiconductor laser with high power, such as a 905nm semiconductor laser. The power supply driving circuit of the semiconductor laser according to the embodiment of the present application will be explained in the following with reference to a plurality of embodiments.
Fig. 1 is a schematic diagram of a power driving circuit of a semiconductor laser according to an embodiment of the present application. As shown in fig. 1, a power supply driving circuit of a semiconductor laser includes: a plurality of driving chips 11, a plurality of switching tubes 12, a semiconductor laser 13 and an energy storage capacitor 14.
The input ends of the driving chips 11 are used for receiving preset pulse signals, and the output ends of the driving chips 11 are respectively connected with the control ends of the switching tubes 12 so as to control the on-off of the switching tubes according to the preset pulse signals; the input ends of the plurality of switching tubes 12 are connected with the cathode of the semiconductor laser 13, and the output ends of the plurality of switching tubes 12 are grounded.
The first power supply is connected with one end of the energy storage capacitor 14, the other end of the energy storage capacitor 14 is grounded, and one end of the energy storage capacitor 14 is also connected with the anode of the semiconductor laser 13 to supply power to the anode of the semiconductor laser 13.
The semiconductor laser 13 may be also referred to as a Laser Diode (LD), for example, an edge-emitting laser diode (Edge Emitting Laser-laser diode, EEL-LD) may be also referred to as an edge-emitting laser (Edge Emitting Laser, EEL). Taking the semiconductor laser 13 as a high-power semiconductor laser, the driving chip 11 may be a high-speed driving chip.
The switching transistor 12 may be, for example, a gallium nitride field effect transistor, or may be another type of transistor. Taking a gan fet as an example, the control end of the switching tube 12 may be a gate of the gan fet, the input end of the switching tube 12 may be a drain of the gan fet, and the output end of the switching tube 12 may be a source of the gan fet.
Each driving chip 11 can convert an input preset pulse signal into a pulse driving (driving) signal, also referred to as a control signal, of the corresponding switching tube 12, so as to control the corresponding switching tube 12 to be turned on rapidly according to the converted pulse driving signal corresponding to the switching tube 12. The converted pulse driving signal may be, for example, a pulse driving signal with low impedance, high peak current, and fast switching. The control switch tube 12 is turned on quickly, which means that the input end and the output end of the control switch tube 12 are turned on quickly.
One end of the energy storage capacitor 14 is connected with a first power supply, and the other end is grounded, so that when the plurality of switching tubes 12 connected with the cathodes of the semiconductor lasers 13 are not conducted, the energy storage capacitor 14 can be charged under the action of the first power supply. However, when the plurality of switching tubes 12 are turned on rapidly under the control of the corresponding driving chip 11, the cathode of the semiconductor laser 13 is turned on with the ground, the energy storage capacitor 14 is discharged rapidly, and a large pulse current is generated for the anode of the semiconductor laser 13, so that the semiconductor laser 13 reaches a high peak power. The first power source may be, for example, a preset High Voltage (HV) power source.
For example: if the semiconductor laser 13 needs to obtain high peak power of 1000W, a switching tube bearing 300A pulse current is needed, and a single switching tube with 300A pulse current has large package volume, can cause large parasitic inductance and large junction capacitance, can cause slow switching speed of the single switching tube, and further can cause widening of pulse width and reduction of peak power. The application adopts a mode of connecting a plurality of switching tubes with small bearing current (small packaging volume and small junction capacitance) in parallel, reduces the parasitic inductance of the switching tubes, narrows the pulse, and can realize high peak power.
In the embodiment of the present application, the plurality of driving chips 11 are used to drive the plurality of switching tubes 12 respectively, and the plurality of switching tubes 12 are in a parallel state, if the maximum pulse current of each switching tube is 102A, the maximum pulse current theoretically output to the cathode of the semiconductor laser 13 through the plurality of switching tubes 12 may be 408A. In the actual working process, the maximum pulse current actually flowing through the single switching tube 12 is about 75A due to the influence of parasitic inductance of the power supply driving circuit, so that the total pulse current can reach 300A, and the peak power of the semiconductor laser 13 can reach 1000W according to the oblique efficiency of the semiconductor laser 13.
According to the power supply driving circuit of the semiconductor laser, the cathodes of the semiconductor laser are connected to the plurality of switching tubes which are respectively driven by the plurality of driving chips, so that the opening speed of each switching tube can be effectively ensured, the input ends of the plurality of switching tubes are connected with the cathodes of the semiconductor laser, namely, the cathodes of the semiconductor laser are driven and controlled in a parallel connection mode of the plurality of switching tubes, the overcurrent capacity and the heat dissipation capacity of the switching tubes are effectively improved, meanwhile, parasitic inductance caused by the packaging of the switching tubes is reduced, the size of driving current provided by the energy storage capacitor for the anode of the semiconductor laser is effectively improved, the high driving current and the narrow pulse width of the semiconductor laser are realized, the high peak power of the semiconductor laser is ensured, the laser radar power requirement is met, the peak power of a single semiconductor laser is not required to be connected in parallel, and the size and the cost of the power supply driving circuit are also greatly improved.
On the basis of the power supply driving circuit of the semiconductor laser provided in the above embodiment, the embodiment of the application may also provide a possible implementation manner of the power supply driving circuit of the semiconductor laser. Fig. 2 is a schematic structural diagram of a power driving circuit of another semiconductor laser according to an embodiment of the present application, where, as shown in fig. 2, the power driving circuit of the semiconductor laser may further include: and the charging resistor 15 is connected with one end of the energy storage capacitor 14 through the charging resistor 15.
A charging resistor 15 is connected between the first power supply and one end of the energy storage capacitor 14, so that charging and discharging of the energy storage capacitor 14 can be realized in a matched manner.
In one implementation example, the embodiment of the application further provides another possible implementation manner of the power supply driving circuit of the semiconductor laser. Fig. 3 is a schematic diagram of a charging resistor in a power driving circuit of another semiconductor laser according to an embodiment of the present application, as shown in fig. 3, in the power driving circuit of the semiconductor laser shown above, the charging resistor 15 may include: the plurality of resistors are connected in parallel and then connected between the first power supply and one end of the energy storage capacitor 14. The number of resistors in the charging resistor 15 is greater than or equal to 2, and the charging resistor 15 may include, for example, the first resistor R1 … … nth 1 resistor Rn1 in fig. 3. In one example, n1 may be, for example, 14, i.e., current resistor 15 may be comprised of 14 resistors in parallel.
Each resistor may be a thick film resistor of a predetermined package size, such as 1206 packaged thick film resistor. In this embodiment, a plurality of resistors are connected in parallel and used as the charging resistor 15, so that more power consumption can be shared, and the charging resistor is prevented from being burnt out due to overlarge current in the charging and discharging process.
In another implementation manner, the embodiment of the application further provides a possible implementation manner of the power supply driving circuit of the semiconductor laser through an implementation example of the energy storage capacitor. Fig. 4 is a schematic structural diagram of an energy storage capacitor in a power driving circuit of a semiconductor laser according to an embodiment of the present application, and as shown in fig. 4, the energy storage capacitor 14 includes: the first ends of the capacitors are connected with the first power supply in parallel, the first ends of the capacitors are also connected with the anode of the semiconductor laser 13, and the second ends of the capacitors are grounded in parallel. The number of capacitors in the storage capacitor 147 is greater than or equal to 2, and the storage capacitor 14 may include, for example, the first capacitor C1 … … and the n2 capacitor Cn2 in fig. 4. In one example, n2 may be 24, for example, i.e., the storage capacitor 14 may be comprised of 24 capacitors in parallel. Here, the first end after the parallel connection of the plurality of capacitors is one end of the energy storage capacitor 14, and the second end after the parallel connection of the plurality of capacitors is the other end of the energy storage capacitor 14.
Each capacitor may be a ceramic capacitor of a predetermined package size, such as a 0402 package ceramic capacitor. In this embodiment, the plurality of capacitors are connected in parallel and used as the energy storage capacitor 14, so that the parasitic inductance of the energy storage capacitor can be reduced, and the parasitic inductance of the whole power supply driving circuit is reduced, so that the size of the driving current provided by the energy storage capacitor for the anode of the semiconductor laser is effectively improved, the high driving current and the narrow pulse width of the semiconductor laser are realized, the high peak power of the semiconductor laser is ensured, and the laser radar power requirement is met.
Alternatively, in some other possible implementation examples, embodiments of the present application may also provide a possible implementation of a power supply driving circuit of a semiconductor laser. Fig. 5 is a schematic structural diagram of a power driving circuit of a semiconductor laser according to another embodiment of the present application, as shown in fig. 5, on the basis of the power driving circuit of the semiconductor laser shown in fig. 1, the power driving circuit of the semiconductor laser according to the embodiment of the present application may further include: and a protection circuit 16. The protection circuit 16 is connected between the anode and the cathode of the semiconductor laser 13.
In this embodiment, the protection circuit 16 is connected between the anode and the cathode of the semiconductor laser 13, so as to protect the semiconductor laser from damage caused by excessive voltage.
In one implementation example, the protection circuit 16 may include: the anodes of the plurality of schottky diodes are connected with the cathode of the semiconductor laser 13, and the cathodes of the plurality of schottky diodes are connected with the anode of the semiconductor laser 13. The number of schottky diodes employed in the protection circuit 16 may be at least 1, for example 2, with 2 schottky diodes being exemplified as the protection circuit 16 in fig. 5, such as the first schottky diode D1 and the second schottky diode D2 in fig. 5.
According to the embodiment of the application, the plurality of Schottky diodes are reversely connected between the anode and the cathode of the semiconductor laser, so that the semiconductor laser can be effectively prevented from being damaged by reverse voltage between the anode and the cathode of the semiconductor laser as a protection circuit.
On the basis of the power driving circuit of the semiconductor laser according to any one of the foregoing embodiments, the embodiment of the present application may further provide a possible implementation example of the power driving circuit of the semiconductor laser, and fig. 6 is a schematic structural diagram of the power driving circuit of the semiconductor laser according to another embodiment of the present application, where, as shown in fig. 6, the power driving circuit of the semiconductor laser as shown above may further include: the input end of the shaping circuit 17 is used for receiving the input pulse signals, and the output end of the shaping circuit 17 is connected with the input ends of the driving chips 11 so as to shape the input pulse signals into preset pulse signals and then output the preset pulse signals to the driving chips 11.
The preset pulse signal may be, for example, a pulse signal with a preset duration on both rising and falling edges, such as a pulse signal of 2.5ns, and the shaping circuit 17 may shape the input pulse signal into a pulse signal with both rising and falling edges of 2.5 ns.
The shaping circuit is adopted to convert the input pulse signals into preset pulse signals and then output the preset pulse signals to the driving chips, so that the driving signals received by the driving chips are all preset pulse signals, synchronous control of the driving chips on the switching tubes is ensured, and pulse control of the semiconductor laser is realized.
Fig. 7 is a schematic diagram of a shaping circuit in a power driving circuit of a semiconductor laser according to another embodiment of the present application. As shown in fig. 7, the shaping circuit 17 may include: and gate 171, input resistor 172, RC filter circuit 173.
One end of the input resistor 172 is an input end of the shaping circuit 17, the other end of the input resistor 172 is grounded, one end of a first filter capacitor in the RC filter circuit 173 is connected with two input ends of the AND gate 171, and the other end of the first filter capacitor is grounded; the power terminal of the and gate 171 is connected to the second power source.
The output of and gate 171 is the output of shaping circuit 17.
In this embodiment, after shorting the two input terminals of the and gate 171, i.e., the a pin and the B pin of the and gate 171 shown in fig. 7, the two input terminals are connected between one terminal of the first filter capacitor in the RC filter circuit 173 and the ground terminal of the and gate 171. The input pulse signal is sequentially input to the and gate 171 through the input resistor 172 and the RC filter circuit 173, shaped by the and gate 171, and then the shaped preset pulse signal is output through the output terminal of the and gate 171.
In one example, the input resistor 172 may be formed, for example, from two resistors in parallel. The second power supply mentioned above mainly supplies power to the and gate 171, and thus, may be a preset Low Voltage (LV) power supply.
Optionally, with continued reference to fig. 7, the shaping circuit 17 further includes: and one end of the second filter capacitor is connected with a second power supply, and the other end of the second filter capacitor is grounded.
That is, a second filter capacitor is further connected between the power supply terminal of the and gate 171 and the second power supply to filter the power supply current of the and gate 171 from the second power supply, so as to ensure stable operation of the and gate 171.
On the basis of the power driving circuit of the semiconductor laser according to any one of the foregoing embodiments, the embodiment of the present application may further provide a possible implementation example of the power driving circuit of the semiconductor laser, and fig. 8 is a schematic structural diagram of the power driving circuit of the semiconductor laser according to another embodiment of the present application, where, as shown in fig. 8, the power driving circuit of the semiconductor laser as shown above may further include: and the third filter capacitor 18, and the first power supply is connected with the charging resistor 15 through the third filter capacitor 18.
In the unit driving circuit of the semiconductor laser provided in this embodiment, the third filter capacitor is disposed between the first power supply and the charging resistor 15, and the output voltage of the first power supply can be filtered, so that the unstable power of the semiconductor laser caused by the unstable anode power supply of the semiconductor laser due to the fluctuation of the output voltage of the first power supply can be prevented.
Optionally, with continued reference to fig. 8, the third filter capacitor 18 includes: and the third ends of the capacitors are connected with the first power supply in parallel, and the fourth ends of the capacitors are grounded. The number of capacitors in the third filter capacitor 18 is greater than or equal to 2, and the third filter capacitor 18 may include, for example, the first capacitor C11 … …, n3 capacitor Cn3 in fig. 8. In one example, n3 may be, for example, 4, i.e., the third filter capacitor 18 may be comprised of 4 capacitors in parallel. The capacitance value of each of the third filter capacitors 18 may be, for example, 1uF.
On the basis of the power supply driving circuit of the semiconductor laser provided in any of the foregoing embodiments, the present application further provides another possible implementation manner of the power supply driving circuit of the semiconductor laser. Fig. 9 is a schematic structural diagram of a power driving circuit of a semiconductor laser according to another embodiment of the present application, and as shown in fig. 9, the power driving circuit of a semiconductor laser as shown above may further include: the input end of the voltage stabilizing circuit 19 is connected with the second power supply, and the output end of the voltage stabilizing circuit 19 is connected with the direct current power supply ends of the plurality of driving chips 11.
The second power supply may be, for example, a preset low-voltage power supply, for example, a low-voltage power supply with a voltage of 7V-12V, and the voltage stabilizing circuit may convert the second power supply into a stable power supply with a preset voltage, for example, a 5V power supply. The output end of the voltage stabilizing circuit 19 is connected to the dc power ends of the driving chips 11, so as to supply dc power to the driving chips 11, and may also be connected to dc power ends of other chips in the power driving circuit, such as the power ends of the and gate, so as to supply stable dc power.
Fig. 10 is a schematic diagram of a voltage stabilizing circuit in a power driving circuit of another semiconductor laser according to an embodiment of the present application. As shown in fig. 10, the voltage stabilizing circuit 19 may include: voltage regulator 191, input filter capacitance 192, and output filter capacitance 193. The input filter capacitor 192 is connected between the input terminal of the voltage regulator 191 and the ground terminal, and the output filter capacitor 193 is connected between the output terminal of the voltage regulator 191 and the ground terminal. The voltage regulator 191 may be, for example, a low voltage linear voltage regulator (Low Dropout regulator, LDO).
And a voltage stabilizing circuit is arranged between the second power supply and the power supply end of the power utilization chip in the power supply driving circuit so as to realize stable power supply of the power utilization chip and ensure safe and stable operation of the circuit.
By way of a specific example, the explanation of driving control of the semiconductor laser is made below by driving four switching transistors with four driving chips, respectively. Fig. 11 is a schematic diagram of a power driving circuit of a semiconductor laser according to another embodiment of the present application. As shown in fig. 11, the power supply driving circuit of the semiconductor laser includes: the shaping circuit 17, 4 driving chips 11, 4 switching tubes 12, a semiconductor laser 13, a first schottky diode D1, a second schottky diode D2, a storage capacitor 14, a charging resistor 15, and a third filter capacitor 18.
The specific implementation of the shaping circuit 17 may be referred to above in fig. 7, and will not be described herein. The shaping circuit 17 may shape the input pulse signal into a preset pulse signal and output the preset pulse signal to the input ends of the 4 driving chips 11, i.e. the positive input pin in+ IN fig. 10. In this example, 4 driving chips 11 may be used to drive 4 switching tubes 12, respectively. The power supply pin VDD of each driving chip 11 is grounded through two capacitors, the ground pin GND and the negative input pin IN-of each driving chip 11 are grounded, and the high voltage output pin OUTH and the low voltage output pin OUTL of each driving chip 11 are connected to the gate G of a corresponding one of the switching transistors 12. The source stages of the 4 switching tubes are grounded, and the drains of the 4 switching tubes are connected with the cathode of the semiconductor laser 13. The first schottky diode D1 and the second schottky diode D2 are also reversely connected between the anode and the cathode of the semiconductor laser 13 to prevent the semiconductor laser 13 from being damaged due to excessive reverse voltage.
The anode of the semiconductor laser 13 is connected to the storage capacitor 14, and in this embodiment, the storage capacitor 14 may be formed by, for example, 14 capacitors, i.e., C1-C14, connected in parallel. The storage capacitor 14 is connected to the charging resistor 15, and in this embodiment, the charging resistor 15 may be formed by, for example, 14 resistors, i.e., R1-R14, connected in parallel. The charging resistor 15 is also connected to the first power supply via a third filter capacitor 18, which third filter capacitor 18 may in this embodiment be formed by, for example, 4 capacitors, i.e. C11-C14, in parallel.
According to the power supply driving circuit of the semiconductor laser, 4 driving chips are adopted to drive 4 switching tubes respectively, so that the switching-on speed of each switching tube is guaranteed, the overcurrent capacity and the heat dissipation capacity of the switching tube are improved, and parasitic inductance caused by self-packaging of the switching tube is reduced; secondly, the schottky diode is connected to the two sides of the semiconductor laser, the semiconductor laser can be effectively prevented from being damaged by reverse voltage breakdown, secondly, the capacitors are connected in parallel, the parasitic inductance of the energy storage capacitor is reduced, the resistors are connected in parallel to realize power consumption sharing, the influence of overlarge current on the charging resistor in the charging and discharging process on the anode of the semiconductor laser is avoided, the capacitors are connected in parallel to place the influence of input voltage fluctuation on the anode of the semiconductor laser, and therefore the high peak power of the semiconductor laser is effectively guaranteed, and the laser radar power requirement is met.
In some other possible implementation examples, in the power driving circuit of the semiconductor laser as shown in any one of the above, the semiconductor laser 13 may be a bare chip having a plurality of channels, where each channel is packaged with a plurality of gold wires bonded in parallel.
For example, the semiconductor laser 13 is a bare chip with 8 channels, and in the process of packaging the semiconductor laser 13, a mode of parallel bonding of a plurality of gold wires, such as 4 gold wires, can be adopted for each channel, and then, for the bare chip with 8 channels, the bonding packaging needs to be performed by parallel bonding of 32 gold wires. In the packaging process, each gold wire used may be, for example, a 25um gold wire.
In the embodiment, for each channel in the semiconductor laser, a plurality of gold wires are packaged in a parallel bonding mode, so that parasitic inductance of the packaged semiconductor laser can be effectively reduced, high peak power of the semiconductor laser is effectively ensured, and laser radar power requirements are met.
In addition, on the basis of providing the power driving circuit of the semiconductor laser, some possible implementation manners may be provided for the circuit board layout of the power driving circuit of the semiconductor laser. Fig. 12 is a schematic diagram of a multi-layer circuit board with a power driving circuit of a semiconductor laser according to an embodiment of the present application. By way of example, the power driver circuits of the semiconductor lasers may be laid out on a 4-layer circuit board, such as L1-L4. The first layer of circuit board L1 may be, for example, a top layer of circuit boards in the multi-layer circuit board, and the fourth layer of circuit board L4 may be, for example, a bottom layer of circuit boards in the multi-layer circuit board.
Fig. 13 is a schematic layout diagram of a power driving circuit of a semiconductor laser on a bottom circuit board according to an embodiment of the present application. The power driving circuit is laid out on a multi-layer circuit board, wherein the charging resistor 15 in the power driving circuit may be placed on a bottom layer circuit board in the multi-layer circuit board, for example, on a fourth layer circuit board L4 shown in fig. 13.
Fig. 14 is a schematic layout diagram of a power driving circuit of a semiconductor laser on a top circuit board according to an embodiment of the present application. Other components than the charge resistor 15 in the power supply driving circuit of the semiconductor laser as shown above are placed on the top circuit board in the multilayer circuit board, for example, as shown in fig. 14. The shaping circuit 17, the plurality of driving chips 11, the plurality of switching tubes 12, the semiconductor laser 13, the energy storage capacitor 14, and the like may be arranged on the first layer circuit board L1.
Alternatively, with continued reference to fig. 14, on a top circuit board, such as the first layer circuit board L1, a plurality of driving chips 11 and a plurality of switching tubes 12 are vertically disposed, and an output end of each driving chip 11 is close to a control end of one switching tube 12.
On the top layer circuit board, a plurality of driving chips and a plurality of switching tubes are vertically arranged, so that the loop path of the driving current after approaching is reduced, the ringing caused by parasitic inductance of the circuit board is reduced, the interference is reduced, the opening time of the switching tubes is prolonged, and the pulse current is increased. Therefore, the layout has the advantages of small loop area, strong anti-interference capability, simple layout and the like.
According to the scheme provided by the embodiment, the charging resistor can be arranged on the bottom layer circuit board, and other components except the charging resistor are arranged on the top layer circuit board, so that the heating element, namely the charging resistor, is isolated from other components, heat dissipation is facilitated, interference of heat to other components is avoided, reliability of a circuitable is enhanced, influence of peak power of a thermal multi-semiconductor laser is reduced, and the peak power is indirectly improved. Secondly, the charging resistor is arranged on the bottom layer circuit board, so that the wiring limited by current limiting is also facilitated.
The middle circuit board except the top circuit board and the bottom circuit board in the multi-layer circuit board, for example, the second layer circuit board L2 and the third layer circuit board L3 in the four-layer circuit board are wiring layers, and only wiring is laid out without laying out components. The second layer of circuit board L2 is a routing layer of a current path, and the third layer of circuit board L3 is a grounding routing layer. The examples are explained and illustrated separately below.
Fig. 15 is a schematic diagram of a current loop between a second layer circuit board and a first layer circuit board in a multi-layer circuit board according to an embodiment of the present application. As shown in fig. 5, in a possible implementation example of specific wiring, a plurality of first vias may be disposed on the top circuit board, and traces between the output terminals of the plurality of driving chips 1 and the control terminals of the plurality of switching tubes 12 are disposed on the second layer circuit board L2, so as to form a current loop between the top circuit board, that is, the first layer circuit board L1 and the second layer circuit board L2. The arrow direction in fig. 15 is the current loop.
The second layer of circuit board is a circuit board which is close to the top layer of circuit board in the multi-layer circuit board.
The second layer of circuit board mainly provides a current path for the input end of the switch tube 12, such as the drain electrode of the gallium nitride field effect tube, and through the plurality of first through holes, the coupling between the first layer of circuit board L1 and the second layer of circuit board L2 is realized, so that the current flowing path is minimum, and the inductance of the power loop is reduced. The top layer circuit board, that is, the first layer circuit board, is provided with a plurality of first through holes, and the more the through holes are, the smaller the parasitic inductance of the circuit board is.
In a possible implementation example, the top circuit board may further include a plurality of second vias, so that the ground wires of other components sequentially pass through the plurality of second vias on the top circuit board, and the plurality of vias on the second circuit board are disposed on the third circuit board L3, where the third circuit board L3 is a circuit board in the multi-layer circuit board that is close to the bottom circuit board.
By using the circuit board adjacent to the bottom circuit board, that is, the third circuit board, as the ground layer circuit board, it can provide an integral ground plane for the power driving circuit, thereby increasing the anti-interference capability.
The shaping circuit 17 is mainly composed of an and gate, and is also arranged on the top layer circuit board, the wiring of the shaping circuit does not need power, the wiring in the circuit board layout is longer, the cost is extremely low, meanwhile, the shaping circuit can work only by a power supply, and excessive consideration is not needed during the wiring.
On the basis of the power supply driving circuit of the semiconductor laser provided by any one of the embodiments, the embodiment of the application also provides a laser radar transmitting module comprising the power supply driving circuit of the semiconductor laser shown in any one of the embodiments.
The laser radar transmitting module with the power supply driving circuit of the semiconductor laser shown in any of the above embodiments can achieve the effect of the power supply driving circuit of the semiconductor laser shown in any of the above embodiments, and detailed description thereof will not be given.
The foregoing is merely illustrative of embodiments of the present application, and the present application is not limited thereto, and any changes or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and the present application is intended to be covered by the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A power supply driving circuit of a semiconductor laser, comprising: the semiconductor laser comprises a plurality of driving chips, a plurality of switching tubes, a semiconductor laser and an energy storage capacitor;
the input ends of the driving chips are used for receiving preset pulse signals, and the output ends of the driving chips are respectively connected with the control ends of the switching tubes so as to control the on-off of the switching tubes according to the preset pulse signals; the input ends of the switch tubes are connected with the cathodes of the semiconductor lasers, and the output ends of the switch tubes are grounded;
the first power supply is connected with one end of the energy storage capacitor, the other end of the energy storage capacitor is grounded, and one end of the energy storage capacitor is also connected with the anode of the semiconductor laser so as to supply power for the anode of the semiconductor laser.
2. The power supply driving circuit according to claim 1, further comprising: and the first power supply is connected with one end of the energy storage capacitor through the charging resistor.
3. The power supply driving circuit according to claim 2, wherein the charging resistor includes: and the resistors are connected in parallel and then connected between the first power supply and one end of the energy storage capacitor.
4. The power supply driving circuit according to claim 1, wherein the energy storage capacitor comprises: the first ends of the capacitors are connected in parallel and are connected with the first power supply, the first ends of the capacitors are also connected with the anode of the semiconductor laser, and the second ends of the capacitors are grounded.
5. The power supply driving circuit according to claim 1, wherein the semiconductor laser is a bare chip having a plurality of channels, wherein each channel is packaged by a plurality of gold wires bonded in parallel.
6. The power supply driving circuit according to claim 2, wherein the power supply driving circuit is laid out on a multilayer circuit board, wherein the charging resistor in the power supply driving circuit is placed on a bottom layer circuit board in the multilayer circuit board, and components other than the charging resistor in the power supply driving circuit are placed on a top layer circuit board in the multilayer circuit board.
7. The power driving circuit according to claim 6, wherein a plurality of first vias are provided on the top circuit board, and traces between the output terminals of the plurality of driving chips and the control terminals of the plurality of switching transistors are provided on the first via on the second circuit board to form a current loop between the top circuit board and the second circuit board;
the second layer of circuit board is a circuit board which is close to the top layer of circuit board in the multilayer circuit board.
8. The power driving circuit of claim 6, wherein the ground trace of the other component sequentially passes through the second plurality of vias on the top circuit board and the second plurality of vias on the second circuit board are disposed on a third circuit board, the third circuit board being a circuit board of the multi-layer circuit board that is adjacent to the bottom circuit board.
9. The power driving circuit of claim 8, wherein the plurality of driving chips and the plurality of switching tubes are vertically disposed on the top circuit board, and an output terminal of each driving chip is adjacent to a control terminal of one switching tube.
10. A lidar transmission module comprising the power supply driving circuit of any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210195565.4A CN116742470A (en) | 2022-03-01 | 2022-03-01 | Power supply driving circuit of semiconductor laser and laser radar transmitting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210195565.4A CN116742470A (en) | 2022-03-01 | 2022-03-01 | Power supply driving circuit of semiconductor laser and laser radar transmitting module |
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| CN116742470A true CN116742470A (en) | 2023-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210195565.4A Pending CN116742470A (en) | 2022-03-01 | 2022-03-01 | Power supply driving circuit of semiconductor laser and laser radar transmitting module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117607838A (en) * | 2024-01-23 | 2024-02-27 | 光梓信息科技(深圳)有限公司 | Multichannel driving system, laser radar and laser radar transmitting end driving method |
| WO2024082726A1 (en) * | 2022-10-17 | 2024-04-25 | 西安炬光科技股份有限公司 | Circuit structure, driving circuit of semiconductor laser, and laser radar transmitting module |
-
2022
- 2022-03-01 CN CN202210195565.4A patent/CN116742470A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024082726A1 (en) * | 2022-10-17 | 2024-04-25 | 西安炬光科技股份有限公司 | Circuit structure, driving circuit of semiconductor laser, and laser radar transmitting module |
| CN117607838A (en) * | 2024-01-23 | 2024-02-27 | 光梓信息科技(深圳)有限公司 | Multichannel driving system, laser radar and laser radar transmitting end driving method |
| CN117607838B (en) * | 2024-01-23 | 2024-05-17 | 光梓信息科技(深圳)有限公司 | Multichannel driving system, laser radar and laser radar transmitting end driving method |
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