CN117936521A - Capacitor structure of monocrystal microwave integrated circuit - Google Patents
Capacitor structure of monocrystal microwave integrated circuit Download PDFInfo
- Publication number
- CN117936521A CN117936521A CN202211239761.3A CN202211239761A CN117936521A CN 117936521 A CN117936521 A CN 117936521A CN 202211239761 A CN202211239761 A CN 202211239761A CN 117936521 A CN117936521 A CN 117936521A
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- China
- Prior art keywords
- layer
- capacitor
- integrated circuit
- conductor
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 116
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims description 45
- 230000015556 catabolic process Effects 0.000 abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The capacitor structure of the single crystal microwave integrated circuit is suitable for being arranged in a single crystal microwave integrated circuit (MMIC), and comprises a first capacitor electrode, a capacitor dielectric structure and a second capacitor electrode, wherein the capacitor dielectric structure comprises a first dielectric layer, a conductive layer and a second dielectric layer, and the capacitor structure of the single crystal microwave integrated circuit is of a cascade connection structure and is used for improving the breakdown voltage of a capacitor.
Description
Technical Field
The present invention relates to a capacitor structure, and more particularly, to a capacitor structure of a single crystal microwave integrated circuit for improving breakdown voltage of a capacitor to match with gallium nitride (GaN) radio frequency IC design.
Background
Gallium nitride (GaN) has been widely used in blue light and power applications operated at high voltage due to the high energy band gap, and gallium nitride (GaN) is also used in single crystal microwave integrated circuits (MMICs) because of the high voltage operation characteristic (> 25V), which can greatly increase the output power of single crystal microwave integrated circuits (compared with circuit applications with a general operation voltage less than 5V).
However, in addition to the high voltage operation of gallium nitride (GaN) in a single crystal microwave integrated circuit (MMIC) using a gallium nitride transistor (GaN HEMT) to increase the operation voltage, a capacitor disposed in the circuit needs to use a semiconductor device capable of operating at a high voltage, and if the breakdown voltage of the capacitor is too low, the high voltage operation of gallium nitride (GaN) in the single crystal microwave integrated circuit (MMIC) is limited, so that the conventional method currently uses a capacitor distributed method to manufacture semiconductor devices such as a capacitor inductor on different substrates, and then integrates the semiconductor devices into a required circuit function through a packaging technology.
Referring to fig. 1, an early-use capacitor structure 21 includes a first electrode 211, a second electrode 212 spaced apart from the first electrode 211, and a dielectric 213 disposed between the first electrode 211 and the second electrode 212, wherein the capacitor structure 21 is in an integrated circuit 22, and the first electrode 211 and the second electrode 212 are electrically connected to a first conductor 221 and a second conductor 222, respectively, for connecting the capacitor structure 21 to other electronic components, wherein the breakdown voltage of the capacitor structure 21 is limited by the structure of the integrated circuit, and the available operating voltage is low.
Referring to fig. 2, another early-use capacitor structure 23 includes two first electrodes 231 disposed at intervals, a second electrode 232 disposed between the two first electrodes 231 and spaced apart from the first electrodes, and two dielectrics 233 disposed between the two first electrodes 231 and the second electrode 232, wherein the capacitor structure 23 exists in an integrated circuit 24, the two first electrodes 231 and the second electrode 232 are respectively electrically connected with a first conductor 241 and a second conductor 242 for connecting the capacitor structure 23 with other electronic components, and the capacitor structure 23 mainly uses the second electrode 232 as a common sensing electrode of the two first electrodes 231 and is a parallel structure of a capacitor, which is mainly aimed at reducing the volume of the capacitor components in the integrated circuit and not increasing the operating voltage of the capacitor components.
Therefore, how to use a capacitor structure with a higher operation voltage in a single crystal microwave integrated circuit (MMIC) to respond to the high operation voltage of a gallium nitride transistor (GaN HEMT) is a goal of urgent efforts of the related art.
Disclosure of Invention
Accordingly, the present invention is directed to a capacitor structure of a single crystal microwave integrated circuit, and is mainly directed to increasing the breakdown voltage of the capacitor structure.
The single crystal microwave integrated circuit capacitor structure comprises a first capacitor electrode, a capacitor dielectric structure and a second capacitor electrode.
The capacitor dielectric structure comprises a first dielectric layer, a conductive layer and a second dielectric layer, wherein the first dielectric layer is connected with the first capacitor electrode, the conductive layer is connected with the first dielectric layer and is electrically disconnected with the first capacitor electrode, and the second dielectric layer is connected with the conductive layer.
The second capacitor electrode is connected with the second dielectric layer and is electrically disconnected with the first capacitor electrode and the conductive layer.
The single crystal microwave integrated circuit is a multi-layer structure and comprises a first structural layer, a second structural layer, a third structural layer, a fourth structural layer and a fifth structural layer in sequence, wherein the first capacitor electrode is arranged on the first structural layer, the first dielectric layer is arranged on the second structural layer, the conductive layer is arranged on the third structural layer, the second dielectric layer is arranged on the fourth structural layer, and the second capacitor electrode is arranged on the fifth structural layer.
The single crystal microwave integrated circuit further comprises a first conductor and a second conductor, wherein the first conductor is connected with the first capacitor electrode, and the second conductor is connected with the second capacitor electrode.
The first conductor is disposed through the first, second, third, fourth and fifth structural layers.
The single crystal microwave integrated circuit is a multi-layer structure and comprises a first structure layer, a second structure layer and a third structure layer in sequence, wherein the first capacitor electrode and the second capacitor electrode are arranged on the first structure layer, the first dielectric layer and the second dielectric layer are arranged on the second structure layer, and the conducting layer is arranged on the third structure layer.
The conductive layer has a first conductive portion connected to the first dielectric layer, a second conductive portion connected to the second dielectric layer, and a third conductive portion connected to the first conductive portion and the second conductive portion.
The single crystal microwave integrated circuit further comprises a first conductor and a second conductor, wherein the first conductor is connected with the first capacitor electrode, and the second conductor is connected with the second capacitor electrode.
The first conductor is disposed through the first, second and third structural layers, and the second conductor is disposed through the first, second and third structural layers.
The invention has the beneficial effects that the conductive layer is only connected with the first dielectric layer and the second dielectric layer, so that the capacitor structure is in a structure arrangement of overlapped series connection, and the breakdown voltage of the capacitor structure can be improved.
Drawings
FIG. 1 is a schematic cross-sectional view illustrating a conventional capacitor structure;
FIG. 2 is a schematic cross-sectional view illustrating another conventional capacitor structure;
FIG. 3 is a schematic cross-sectional view of a first preferred embodiment of a single crystal microwave integrated circuit capacitor structure according to the present invention;
FIG. 4 is a schematic cross-sectional view of a second preferred embodiment of a single crystal microwave integrated circuit capacitor structure according to the present invention.
Symbol description in the drawings:
21. A capacitor structure;
211. a first electrode;
212. A second electrode;
213. A dielectric;
22. An integrated circuit;
221. A first conductor;
222. A second conductor;
23. A capacitor structure;
231. A first electrode;
232. a second electrode;
233. A dielectric;
24. An integrated circuit;
241. A first conductor;
242. A second conductor;
31. A first structural layer;
32. A second structural layer;
33. a third structural layer;
34. A fourth structural layer;
35. A fifth structural layer;
36. a first conductor;
37. a second conductor;
38. A first transmission circuit;
39. A second transmission circuit;
41. a first capacitor electrode;
42. a capacitor dielectric structure;
421. a first dielectric layer;
422. A conductive layer;
423. a second dielectric layer;
424. a first conductive portion;
425. A second conductive portion;
426. a third conductive portion;
43. And a second capacitor electrode.
Detailed Description
The features and aspects of the present invention will become apparent from the following detailed description of two preferred embodiments, which is to be read in connection with the accompanying drawings. Before proceeding to the detailed description, it should be noted that similar components are denoted by the same reference numerals.
Referring to fig. 3, a first preferred embodiment of a capacitor structure of a single crystal microwave integrated circuit (MMIC, monolithic Microwave Integrated Circuit) according to the present invention is a multi-layer structure, and includes, in order from bottom to top, a first structure layer 31, a second structure layer 32, a third structure layer 33, a fourth structure layer 34, and a fifth structure layer 35.
The first structure layer 31, the second structure layer 32, the third structure layer 33, the fourth structure layer 34 and the fifth structure layer 35 are part of the single crystal microwave integrated circuit, and a gallium nitride transistor (GaN HEMT) (not shown) is further disposed in the single crystal microwave integrated circuit.
The capacitor structure comprises a first capacitor electrode 41, a capacitor dielectric structure 42 and a second capacitor electrode 43, wherein the capacitor dielectric structure 42 comprises a first dielectric layer 421, a conductive layer 422 and a second dielectric layer 423, the first dielectric layer 421 is connected with the first capacitor electrode 41, the conductive layer 422 is connected with the first dielectric layer 421 and is electrically disconnected with the first capacitor electrode 41, the second dielectric layer 423 is connected with the conductive layer 422, and the second capacitor electrode 43 is connected with the second dielectric layer 423 and is electrically disconnected with the first capacitor electrode 41 and the conductive layer 422.
In the first preferred embodiment, the first capacitor electrode 41 is disposed on the first structural layer 31, the first dielectric layer 421 is disposed on the second structural layer 32, the conductive layer 422 is disposed on the third structural layer 33, the second dielectric layer 423 is disposed on the fourth structural layer 34, the second capacitor electrode 43 is disposed on the fifth structural layer 35, and the contact area between the first capacitor electrode 41 and the first dielectric layer 421, the contact area between the first dielectric layer 421 and the conductive layer 422, the contact area between the conductive layer 422 and the second dielectric layer 423, and the contact area between the second dielectric layer 423 and the second capacitor electrode 43 are substantially the same, but the contact area between the first capacitor electrode 41 and the first dielectric layer 421, the contact area between the first dielectric layer 421 and the conductive layer 422, the contact area between the second dielectric layer 423 and the second dielectric layer 423, and the contact area between the second capacitor electrode 423 should not be limited by the actual contact area between the first capacitor electrode 41 and the second dielectric layer 423, since two or more contact areas are substantially not reached in practice.
The single crystal microwave integrated circuit further comprises a first conductor 36 and a second conductor 37, wherein the first conductor 36 is connected to the first capacitor electrode 41 to electrically connect to a first transmission circuit 38, the second conductor 37 is connected to the second capacitor electrode 43 to electrically connect to a second transmission circuit 39 to further electrically connect to other electronic components in the single crystal microwave integrated circuit, preferably, the first conductor 36 penetrates through the first structure layer 31, the second structure layer 32, the third structure layer 33, the fourth structure layer 34 and the fifth structure layer 35 to electrically connect to the first transmission circuit 38 disposed above the single crystal microwave integrated circuit, and in practical implementation, the disposition of the first conductor 36 and the second conductor 37 should not be limited to this.
Referring to fig. 4, a second preferred embodiment of a capacitor structure of a single crystal microwave integrated circuit according to the present invention is substantially the same as the first preferred embodiment, and is not described in detail herein, wherein the single crystal microwave integrated circuit is a multi-layer structure, and sequentially includes a first structural layer 31, a second structural layer 32 and a third structural layer 33 from bottom to top, the first capacitor electrode 41 and the second capacitor electrode 43 are disposed on the first structural layer 31, the first dielectric layer 421 and the second dielectric layer 423 are disposed on the second structural layer 32, the conductive layer 422 is disposed on the third structural layer 33, and in practical implementation, the conductive layer 422 may span into other structures, such that the first capacitor electrode 41 and the second capacitor electrode 43 are disposed on different structural layers, and the first dielectric layer 421 and the second dielectric layer 423 are disposed on different structural layers, which should not be limited to the preferred embodiment.
The conductive layer 422 has a first conductive portion 424 connected to the first dielectric layer 421, a second conductive portion 425 connected to the second dielectric layer 423, and a third conductive portion 426 connected to the first conductive portion 424 and the second conductive portion 425, so that the distance between the first dielectric layer 421 and the second dielectric layer 423 can be pulled apart by the third conductive portion 426 to use the design of the single crystal microwave integrated circuit.
The single crystal microwave integrated circuit further comprises a first conductor 36 and a second conductor 37, wherein the first conductor 36 is connected with the first capacitor electrode 41 to be electrically connected with a first transmission circuit 38, the second conductor 37 is connected with the second capacitor electrode 43 to be electrically connected with a second transmission circuit 39 to be further electrically connected with other electronic components in the single crystal microwave integrated circuit, the first conductor 36 penetrates through the first structure layer 31, the second structure layer 32 and the third structure layer 33, and the second conductor 37 penetrates through the first structure layer 31, the second structure layer 32 and the third structure layer 33.
In the second preferred embodiment, the contact area between the first capacitor electrode 41 and the first dielectric layer 421, the contact area between the first dielectric layer 421 and the first conductive portion 424, the contact area between the second conductive portion 425 and the second dielectric layer 423, and the contact area between the second dielectric layer 423 and the second capacitor electrode 43 are substantially the same, and since two or more contact surfaces with the same area are not substantially achieved in practice, the integrated circuit design direction is the same direction, and in practice, the contact area between the first capacitor electrode 41 and the first dielectric layer 421, the contact area between the first dielectric layer 421 and the first conductive portion 424, the contact area between the second conductive portion 425 and the second dielectric layer 423, and the contact area between the second dielectric layer 423 and the second capacitor electrode 43 should not be limited to the structure of the actual integrated circuit.
It should be noted that, in the single crystal microwave integrated circuit, the equivalent capacitance value becomes smaller when the capacitors are connected in series, and if the same capacitance value is to be achieved, the area used by the capacitor element becomes larger, so that the capacitor stack connection in the prior art is not adopted in the integrated circuit. In contrast, the capacitor structure of the invention is aimed at a single crystal microwave integrated circuit with gallium nitride (GaN) material electronic components, and the equivalent capacitance value is reduced, but the capacitor breakdown voltage can be effectively improved, and the component structure is better than the traditional distributed method.
In summary, the conductive layer 422 can space the first dielectric layer 421 and the second dielectric layer 423 from each other, so that the capacitor structure forms a series structure, which can raise the breakdown voltage of the capacitor structure to further match the operating voltage of other electronic components (e.g., gallium nitride (GaN) material electronic components), thereby actually achieving the purpose of the present invention.
The foregoing description is only illustrative of two preferred embodiments of the present invention, and is not intended to limit the scope of the invention, i.e., the invention is not limited to the specific embodiments described herein, but is to be accorded the full scope of the claims.
Claims (8)
1. A single crystal microwave integrated circuit capacitor structure adapted for placement in a single crystal microwave integrated circuit, comprising:
A first capacitor electrode;
a capacitive dielectric structure comprising:
a first dielectric layer connected to the first capacitor electrode;
a conductive layer connected with the first dielectric layer and electrically disconnected with the first capacitor electrode;
a second dielectric layer connected to the conductive layer;
and the second capacitor electrode is connected with the second dielectric layer and is electrically disconnected with the first capacitor electrode and the conductive layer.
2. The single crystal microwave integrated circuit capacitor structure of claim 1, wherein the single crystal microwave integrated circuit is a multi-layer structure and comprises, in order, a first structural layer, a second structural layer, a third structural layer, a fourth structural layer, and a fifth structural layer, the first capacitor electrode is disposed on the first structural layer, the first dielectric layer is disposed on the second structural layer, the conductive layer is disposed on the third structural layer, the second dielectric layer is disposed on the fourth structural layer, and the second capacitor electrode is disposed on the fifth structural layer.
3. The capacitor structure of claim 2, wherein the single crystal microwave integrated circuit further comprises a first conductor and a second conductor, the first conductor being connected to the first capacitor electrode, the second conductor being connected to the second capacitor electrode.
4. The capacitor structure of claim 3, wherein the first conductor is disposed through the first, second, third, fourth and fifth structural layers.
5. The capacitor structure of claim 1, wherein the single crystal microwave integrated circuit is a multi-layer structure and comprises a first structural layer, a second structural layer and a third structural layer in sequence, the first capacitor electrode and the second capacitor electrode are disposed on the first structural layer, the first dielectric layer and the second dielectric layer are disposed on the second structural layer, and the conductive layer is disposed on the third structural layer.
6. The capacitor structure of claim 5, wherein the conductive layer has a first conductive portion connected to the first dielectric layer, a second conductive portion connected to the second dielectric layer, and a third conductive portion connected to the first conductive portion and the second conductive portion.
7. The capacitor structure of claim 6, wherein the single crystal microwave integrated circuit further comprises a first conductor and a second conductor, the first conductor being connected to the first capacitor electrode, the second conductor being connected to the second capacitor electrode.
8. The capacitor structure of claim 7, wherein the first conductor is disposed through the first, second and third structural layers, and the second conductor is disposed through the first, second and third structural layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211239761.3A CN117936521A (en) | 2022-10-11 | 2022-10-11 | Capacitor structure of monocrystal microwave integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211239761.3A CN117936521A (en) | 2022-10-11 | 2022-10-11 | Capacitor structure of monocrystal microwave integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117936521A true CN117936521A (en) | 2024-04-26 |
Family
ID=90752511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211239761.3A Pending CN117936521A (en) | 2022-10-11 | 2022-10-11 | Capacitor structure of monocrystal microwave integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117936521A (en) |
-
2022
- 2022-10-11 CN CN202211239761.3A patent/CN117936521A/en active Pending
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