CN117907671B - Charge pump detection circuit, chip and electronic equipment - Google Patents
Charge pump detection circuit, chip and electronic equipment Download PDFInfo
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- CN117907671B CN117907671B CN202410317555.2A CN202410317555A CN117907671B CN 117907671 B CN117907671 B CN 117907671B CN 202410317555 A CN202410317555 A CN 202410317555A CN 117907671 B CN117907671 B CN 117907671B
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- 238000001514 detection method Methods 0.000 title claims abstract description 43
- 238000005070 sampling Methods 0.000 claims abstract description 180
- 230000010076 replication Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
The invention provides a charge pump detection circuit, a chip and electronic equipment, wherein the charge pump detection circuit comprises a current input circuit, a current mirror copying circuit, a voltage sampling circuit and a comparison circuit; the current input circuit is used for providing input reference current; the first end of the current mirror copying circuit is connected with the current input circuit and is used for scaling the reference current and providing the scaled current for the voltage sampling circuit to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with a power supply, the fourth end of the voltage sampling circuit is connected with the output end of the charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage and the output voltage of the charge pump; the first end of the comparison circuit is connected with the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used for outputting corresponding control signals according to the sampled voltage. The circuit improves the detection precision of the output voltage of the charge pump.
Description
Technical Field
The present invention relates to the field of charge pump technologies, and in particular, to a charge pump detection circuit, a chip, and an electronic device.
Background
In integrated circuit design, charge pump technology is widely used in various fields, such as high-voltage driving, power management, and PLL (Phase-Locked Loop), etc., and its core function is to create an output voltage higher than the original power supply, such as 5V, 10V, or 12V higher than the power supply voltage, etc., based on the input power supply voltage. However, ensuring the voltage required for a stable output of the charge pump circuit is a critical technical challenge. When the output voltage of the charge pump is too high, it may cause breakdown of a gate Oxide layer of a high-side MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device due to the excessive voltage, thereby causing hardware damage. Conversely, if the output voltage of the charge pump is insufficient, the effective conduction depth of the MOSFET device is limited, the on-resistance of the MOSFET device is increased, and accordingly, the heating and the static power consumption increase during operation are increased, and the chip is exposed to serious over-temperature risk and unacceptable energy consumption level after being in a large-resistance operation state for a long time.
Therefore, how to accurately detect the output voltage of the charge pump is a problem to be solved.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent.
To this end, a first object of the present invention is to propose a charge pump detection circuit which improves the detection accuracy of the output voltage of the charge pump.
A second object of the invention is to propose a chip.
A third object of the present invention is to propose an electronic device.
To achieve the above object, an embodiment of a first aspect of the present invention provides a charge pump detection circuit, including: the current input circuit, the current mirror copying circuit, the voltage sampling circuit and the comparison circuit; wherein the current input circuit is used for providing input reference current; the first end of the current mirror copying circuit is connected with the current input circuit, and the current mirror copying circuit is used for scaling the reference current and providing the scaled current for the voltage sampling circuit so as to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with a power supply, the fourth end of the voltage sampling circuit is connected with the output end of a charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; and the second end of the comparison circuit is used for outputting a corresponding control signal according to the sampling voltage.
The charge pump detection circuit comprises a current input circuit, a current mirror replication circuit, a voltage sampling circuit and a comparison circuit, wherein the current input circuit is used for providing input reference current; the first end of the current mirror copying circuit is connected with the current input circuit, and the current mirror copying circuit is used for scaling the reference current and providing the scaled current for the voltage sampling circuit so as to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with a power supply, the fourth end of the voltage sampling circuit is connected with the output end of the charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; and the second end of the comparison circuit is used for outputting a corresponding control signal according to the sampling voltage. Thus, the circuit improves the detection accuracy of the output voltage of the charge pump by using the current input circuit, the current mirror copy circuit, the voltage sampling circuit and the comparison circuit.
In addition, the charge pump detection circuit according to the embodiment of the first aspect of the present invention may further have the following additional technical features:
According to one embodiment of the present invention, the voltage sampling circuit includes:
A first voltage sampling unit, wherein a first end of the first voltage sampling unit is used as a third end of the voltage sampling circuit, and a second end of the first voltage sampling unit is used as a first end of the voltage sampling circuit;
The first end of the second voltage sampling unit is used as the fourth end of the voltage sampling circuit, the second end of the second voltage sampling unit is used as the second end of the voltage sampling circuit, and the third end of the second voltage sampling unit is respectively connected with the second end of the first voltage sampling unit and the third end of the first voltage sampling unit;
The first end of the third voltage sampling unit is connected with the fourth end of the second voltage sampling unit, the second end of the third voltage sampling unit is used as the fifth end of the voltage sampling circuit, and the third end of the third voltage sampling unit is connected with the second end of the second voltage sampling unit.
According to an embodiment of the present invention, the first voltage sampling unit includes:
A first resistor, wherein a first end of the first resistor is used as a first end of the first voltage sampling unit;
The first end of the second resistor is connected with the second end of the first resistor;
the first end of the first switch tube is connected with the second end of the second resistor, the second end of the first switch tube is used as the second end of the first voltage sampling unit, and the third end of the first switch tube is used as the third end of the first voltage sampling unit.
According to an embodiment of the present invention, the second voltage sampling unit includes:
a third resistor, a first end of which is used as a first end of the second voltage sampling unit;
The first end of the fourth resistor is connected with the second end of the third resistor, and the second end of the fourth resistor is used as the fourth end of the second voltage sampling unit;
the first end of the second switch tube is connected with the second end of the fourth resistor, the second end of the second switch tube is used as the second end of the second voltage sampling unit, and the third end of the second switch tube is used as the third end of the second voltage sampling unit.
According to an embodiment of the present invention, the third voltage sampling unit includes:
A third switching tube, wherein a first end of the third switching tube is used as a first end of the third voltage sampling unit, a second end of the third switching tube is used as a second end of the third voltage sampling unit, and a third end of the third switching tube is used as a third end of the third voltage sampling unit;
and the first end of the sampling resistor is connected with the second end of the third switching tube, and the second end of the sampling resistor is grounded.
According to one embodiment of the present invention, the current mirror replica circuit includes:
a fourth switching tube, wherein a first end of the fourth switching tube is used as a first end of the current mirror replica circuit, and a second end of the fourth switching tube is grounded;
a fifth switching tube, a first end of which is used as a second end of the current mirror replica circuit, and a second end of which is grounded;
And the first end of the sixth switching tube is used as the third end of the current mirror replication circuit, the second end of the sixth switching tube is grounded, and the third end of the sixth switching tube is respectively connected with the first end of the fourth switching tube, the third end of the fourth switching tube and the third end of the fifth switching tube.
According to one embodiment of the invention, the comparison circuit comprises:
And the positive input end of the comparator is used as the first end of the comparison circuit, the negative input end of the comparator is used as the input end of the reference voltage, and the output end of the comparator is used as the second end of the comparison circuit.
According to one embodiment of the present invention, the first to sixth switching transistors are NMOS transistors.
According to one embodiment of the present invention, the sum of the resistances of the first resistor and the second resistor is equal to the sum of the resistances of the third resistor and the fourth resistor.
According to one embodiment of the present invention, the expression of the sampling voltage is:
Vsample=[（Vcp-Vs）/（R3+R4）]*Rsample；
Wherein Vsample is the sampling voltage, vcp is the output voltage of the charge pump, vs is the power supply voltage, R3 is the resistance of the third resistor, R4 is the resistance of the fourth resistor, and Rsample is the resistance of the sampling resistor.
In order to achieve the above object, a second aspect of the present invention provides a chip including the above charge pump detection circuit.
According to the chip provided by the embodiment of the invention, the detection accuracy of the output voltage of the charge pump is improved by using the charge pump detection circuit.
To achieve the above object, an embodiment of a third aspect of the present invention provides an electronic device, which includes the above chip.
According to the electronic equipment provided by the embodiment of the invention, the detection accuracy of the output voltage of the charge pump is improved by using the chip.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a circuit diagram of a charge pump detection circuit in the related art;
fig. 2 is a schematic diagram of a charge pump detection circuit according to one embodiment of the invention.
Detailed Description
In order to enable a person skilled in the art to better understand the technical solutions of the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
The charge pump detection circuit, the chip, and the electronic device according to the embodiments of the present invention are described below with reference to the drawings.
Before describing the charge pump detection circuit according to the embodiment of the present invention, the charge pump detection circuit in the following related art will be described.
As shown in fig. 1, a power voltage Vs is input as a gate voltage of a high-voltage PMOS transistor, and an output voltage Vcp of a charge pump is connected to a source of the PMOS transistor. The output voltage Vcp of the charge pump is then sampled by a resistive divider network to obtain a sampled voltage that reflects the actual output voltage. The sampled voltage is compared with the reference voltage Vref in a comparator to determine whether the output voltage of the charge pump reaches the required voltage.
However, the charge pump detection circuit in the related art has the following disadvantages: in terms of accuracy, the accuracy of such detection methods is limited, and is particularly susceptible to temperature variations, which can significantly affect the accuracy of the resistor voltage division.
To this end, the present invention proposes a charge pump detection circuit that includes an improvement in detection accuracy of a charge pump output voltage by using a current input circuit, a current mirror replica circuit, a voltage sampling circuit, and a comparison circuit.
Fig. 2 is a schematic diagram of a charge pump detection circuit according to an embodiment of the invention.
As shown in fig. 2, a charge pump detection circuit according to an embodiment of the present invention includes: a current input circuit 10, a current mirror copy circuit 20, a voltage sampling circuit 30, and a comparison circuit 40.
The current input circuit 10 is used for providing an input reference current I B. The first terminal of the current mirror replica circuit 20 is connected to the current input circuit 10, and the current mirror replica circuit 20 is configured to scale the reference current I B (e.g., amplify the reference current I B by k 1), and provide the scaled current to the voltage sampling circuit 30 to drive the voltage sampling circuit 30 to operate. The first end of the voltage sampling circuit 30 is connected to the second end of the current mirror copy circuit 20, the second end of the voltage sampling circuit 30 is connected to the third end of the current mirror copy circuit 20, the third end of the voltage sampling circuit 30 is connected to a power supply, the fourth end of the voltage sampling circuit 30 is connected to the output end of the charge pump, and the voltage sampling circuit 30 is configured to generate a sampling voltage according to the power supply voltage Vs of the power supply and the output voltage Vcp of the charge pump. The first end of the comparison circuit 40 is connected to the fifth end of the voltage sampling circuit 30, and the second end of the comparison circuit 40 is configured to output a corresponding control signal according to the sampled voltage.
As shown in fig. 2, the voltage sampling circuit 30 includes: a first voltage sampling unit 31, a second voltage sampling unit 32, and a third voltage sampling unit 33. Wherein, the first end of the first voltage sampling unit 31 is used as the third end of the voltage sampling circuit 30, and the second end of the first voltage sampling unit 31 is used as the first end of the voltage sampling circuit 30. The first end of the second voltage sampling unit 32 is used as the fourth end of the voltage sampling circuit 30, the second end of the second voltage sampling unit 32 is used as the second end of the voltage sampling circuit 30, and the third end of the second voltage sampling unit 32 is respectively connected with the second end of the first voltage sampling unit 31 and the third end of the first voltage sampling unit 31. The first end of the third voltage sampling unit 33 is connected to the fourth end of the second voltage sampling unit 32, the second end of the third voltage sampling unit 33 serves as the fifth end of the voltage sampling circuit 30, and the third end of the third voltage sampling unit 33 is connected to the second end of the second voltage sampling unit 32.
As shown in fig. 2, the first voltage sampling unit 31 includes: a first resistor R1, a second resistor R2 and a first switching tube M1. Wherein, the first end of the first resistor R1 is used as the first end of the first voltage sampling unit 31. The first end of the second resistor R2 is connected to the second end of the first resistor R1. The first end of the first switching tube M1 is connected to the second end of the second resistor R2, the second end of the first switching tube M1 is used as the second end of the first voltage sampling unit 31, and the third end of the first switching tube M1 is used as the third end of the first voltage sampling unit 31.
As shown in fig. 2, the second voltage sampling unit 32 includes: a third resistor R3, a fourth resistor R4 and a second switching tube M2. Wherein the first end of the third resistor R3 is used as the first end of the second voltage sampling unit 32. The first end of the fourth resistor R4 is connected to the second end of the third resistor R3, and the second end of the fourth resistor R4 serves as the fourth end of the second voltage sampling unit 32. The first end of the second switching tube M2 is connected to the second end of the fourth resistor R4, the second end of the second switching tube M2 is used as the second end of the second voltage sampling unit 32, and the third end of the second switching tube M2 is used as the third end of the second voltage sampling unit 32.
In the embodiment of the present invention, the sum of the resistance values of the first resistor R1 and the second resistor R2 is equal to the sum of the resistance values of the third resistor R3 and the fourth resistor R4. That is, r1+r2=r3+r4. As one possible way, r1=r3 is a ploy resistor, and the temperature drift of the ploy resistor is positive, so that the resistance values of R1 and R3 increase with increasing temperature; the R2=R4 is Nwell resistance, the temperature drift of the Nwell resistance is negative, so that the resistance values of R2 and R4 are reduced along with the increase of temperature, and the sum of the resistance values of the resistors can be extremely small, and d (R1+R2)/dT and d (R3+R4)/dT are extremely small by adjusting the ratio of the two resistances, namely the ratio of the poly resistance to the Nwell resistance.
As shown in fig. 2, the third voltage sampling unit 33 includes: a third switching tube M3 and a sampling resistor Rsample. The first end of the third switching tube M3 is used as the first end of the third voltage sampling unit 33, the second end of the third switching tube M3 is used as the second end of the third voltage sampling unit 33, and the third end of the third switching tube M3 is used as the third end of the third voltage sampling unit 33. The first end of sampling resistor Rsample is connected to the second end of third switching tube M3, and the second end of sampling resistor Rsample is grounded.
As shown in fig. 2, the current mirror replica circuit 20 includes: fourth switching tube M4, fifth switching tube M5 and sixth switching tube M6. The first end of the fourth switching tube M4 is used as the first end of the current mirror copy circuit 20, and the second end of the fourth switching tube M4 is grounded. The first end of the fifth switching tube M5 is used as the second end of the current mirror replica circuit 20, and the second end of the fifth switching tube M5 is grounded. The first end of the sixth switching tube M6 is used as the third end of the current mirror replica circuit 20, the second end of the sixth switching tube M6 is grounded, and the third end of the sixth switching tube M6 is respectively connected with the first end of the fourth switching tube M4, the third end of the fourth switching tube M4 and the third end of the fifth switching tube M5.
In the embodiment of the invention, the first switching tube M1 to the sixth switching tube M6 are NMOS tubes, the first ends of the first switching tube M1 to the sixth switching tube M6 are drain electrodes, the second ends of the first switching tube M1 to the sixth switching tube M6 are source electrodes, and the third ends of the first switching tube M1 to the sixth switching tube M6 are gate electrodes.
As shown in fig. 2, the comparison circuit 40 includes: and a comparator AMP. Wherein the positive input terminal of the comparator AMP is used as the first terminal of the comparison circuit 40, the negative input terminal of the comparator AMP is used as the input terminal of the reference voltage Vref, and the output terminal of the comparator AMP is used as the second terminal of the comparison circuit 40.
In the embodiment of the present invention, the current mirror replica circuit 20 may amplify the reference current IB by k 1 times, so that the current ratio flowing through the fourth switching tube M4, the fifth switching tube M5, and the sixth switching tube M6 is 1: k 1：k1. The amplifying current is used to make the first switching tube M1 and the second switching tube M2 operate in the saturation region. Assuming that the current flowing through the fifth switching transistor M5 is I 1 and the current flowing through the sixth switching transistor M6 is I 2, I 1=I2. Since the bias currents I 1、I2 of the two paths of the power supply voltage Vs and the output voltage Vcp of the charge pump are consistent, the current generated by the voltage difference between the output voltage Vcp of the charge pump and the power supply voltage Vs is expressed as I 3,I3 with the expression of I 3 = (Vcp-Vs)/(r3+r4), and then the sampling voltage Vsample is obtained, where the expression of the sampling voltage Vsample is: vsample= [ (Vcp-Vs)/(r3+r4) ]. Rsample. Wherein Vsample is the sampling voltage, vcp is the output voltage Vcp of the charge pump, vs is the power supply voltage, R3 is the resistance of the third resistor R3, R4 is the resistance of the fourth resistor R4, rsample is the resistance of the sampling resistor Rsample.
Then, comparing the sampling voltage Vsample with the reference voltage Vref in the comparator AMP, and outputting a corresponding control signal according to the comparison result, wherein the comparator AMP outputs the first control signal when Vsample > Vref; when Vsample is less than or equal to Vref, the comparator AMP outputs a second control signal. In this connection, it can be understood that the comparator AMP outputs the first control signal when the output voltage Vcp of the charge pump is higher than the power supply voltage Vs by the reference voltage Vref; the comparator AMP outputs a second control signal when the output voltage Vcp of the charge pump is lower than or equal to the reference voltage Vref than the power supply voltage Vs. The essence is also to monitor the output voltage Vcp of the charge pump and to send out a control signal according to the monitoring result.
In summary, the charge pump detection circuit according to the embodiment of the present invention includes a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit, wherein the current input circuit is configured to provide an input reference current; the first end of the current mirror copying circuit is connected with the current input circuit, and the current mirror copying circuit is used for scaling the reference current and providing the scaled current for the voltage sampling circuit so as to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with a power supply, the fourth end of the voltage sampling circuit is connected with the output end of the charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; and the second end of the comparison circuit is used for outputting a corresponding control signal according to the sampling voltage. Therefore, the circuit comprises a current input circuit, a current mirror copying circuit, a voltage sampling circuit and a comparison circuit, wherein the detection threshold value of the detection circuit structure is insensitive to temperature, the detection precision of the output voltage of the charge pump is improved, the process consistency of the detection circuit structure is higher, and the circuit does not need to be adjusted and repaired after a chip leaves a factory.
Based on the above embodiment, the present invention further provides a chip, which includes a charge pump detection circuit.
According to the chip provided by the embodiment of the invention, the detection accuracy of the output voltage of the charge pump is improved by using the charge pump detection circuit.
Based on the above embodiment, the present invention further provides an electronic device, which includes the above chip.
According to the electronic equipment provided by the embodiment of the invention, the detection accuracy of the output voltage of the charge pump is improved by using the chip.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
In addition, the terms "first," "second," are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Claims (8)
1. A charge pump detection circuit, comprising: the current input circuit, the current mirror copying circuit, the voltage sampling circuit and the comparison circuit; wherein,
The current input circuit is used for providing input reference current;
The first end of the current mirror copying circuit is connected with the current input circuit, and the current mirror copying circuit is used for scaling the reference current and providing the scaled current for the voltage sampling circuit so as to drive the voltage sampling circuit to work;
The first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with the output end of a power supply, the fourth end of the voltage sampling circuit is connected with the output end of a charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump;
The first end of the comparison circuit is connected with the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used for outputting a corresponding control signal according to the sampling voltage;
Wherein, the voltage sampling circuit includes:
A first voltage sampling unit, wherein a first end of the first voltage sampling unit is used as a third end of the voltage sampling circuit, and a second end of the first voltage sampling unit is used as a first end of the voltage sampling circuit;
The first end of the second voltage sampling unit is used as the fourth end of the voltage sampling circuit, the second end of the second voltage sampling unit is used as the second end of the voltage sampling circuit, and the third end of the second voltage sampling unit is respectively connected with the second end of the first voltage sampling unit and the third end of the first voltage sampling unit;
the first end of the third voltage sampling unit is connected with the fourth end of the second voltage sampling unit, the second end of the third voltage sampling unit is used as the fifth end of the voltage sampling circuit, and the third end of the third voltage sampling unit is connected with the second end of the second voltage sampling unit;
wherein, the first voltage sampling unit includes:
A first resistor, wherein a first end of the first resistor is used as a first end of the first voltage sampling unit;
The first end of the second resistor is connected with the second end of the first resistor;
The first end of the first switch tube is connected with the second end of the second resistor, the second end of the first switch tube is used as the second end of the first voltage sampling unit, and the third end of the first switch tube is used as the third end of the first voltage sampling unit;
wherein the second voltage sampling unit includes:
a third resistor, a first end of which is used as a first end of the second voltage sampling unit;
The first end of the fourth resistor is connected with the second end of the third resistor, and the second end of the fourth resistor is used as the fourth end of the second voltage sampling unit;
the first end of the second switching tube is connected with the second end of the fourth resistor, the second end of the second switching tube is used as the second end of the second voltage sampling unit, and the third end of the second switching tube is used as the third end of the second voltage sampling unit;
the expression of the sampling voltage is as follows:
Vsample=[（Vcp-Vs）/（R3+R4）]*Rsample；
Wherein Vsample is the sampling voltage, vcp is the output voltage of the charge pump, vs is the power supply voltage, R3 is the resistance of the third resistor, R4 is the resistance of the fourth resistor, and Rsample is the resistance of the sampling resistor.
2. The charge pump detection circuit of claim 1 wherein the third voltage sampling unit comprises:
A third switching tube, wherein a first end of the third switching tube is used as a first end of the third voltage sampling unit, a second end of the third switching tube is used as a second end of the third voltage sampling unit, and a third end of the third switching tube is used as a third end of the third voltage sampling unit;
and the first end of the sampling resistor is connected with the second end of the third switching tube, and the second end of the sampling resistor is grounded.
3. The charge pump detection circuit of claim 1 wherein the current mirror replica circuit comprises:
a fourth switching tube, wherein a first end of the fourth switching tube is used as a first end of the current mirror replica circuit, and a second end of the fourth switching tube is grounded;
a fifth switching tube, a first end of which is used as a second end of the current mirror replica circuit, and a second end of which is grounded;
And the first end of the sixth switching tube is used as the third end of the current mirror replication circuit, the second end of the sixth switching tube is grounded, and the third end of the sixth switching tube is respectively connected with the first end of the fourth switching tube, the third end of the fourth switching tube and the third end of the fifth switching tube.
4. The charge pump detection circuit of claim 1 wherein the comparison circuit comprises:
And the positive input end of the comparator is used as the first end of the comparison circuit, the negative input end of the comparator is used as the input end of the reference voltage, and the output end of the comparator is used as the second end of the comparison circuit.
5. A charge pump detection circuit according to any one of claims 1 to 3 wherein the first to sixth switching transistors are NMOS transistors.
6. The charge pump detection circuit of claim 1 wherein a sum of resistance values of the first resistor and the second resistor is equal to a sum of resistance values of the third resistor and the fourth resistor.
7. A chip comprising a charge pump detection circuit as claimed in any one of claims 1 to 6.
8. An electronic device comprising the chip of claim 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410317555.2A CN117907671B (en) | 2024-03-20 | 2024-03-20 | Charge pump detection circuit, chip and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070087045A (en) * | 2004-12-13 | 2007-08-27 | 모사이드 테크놀로지스 코포레이션 | Phase-locked loop circuitry using charge pumps with current mirror circuitry |
| CN109286324A (en) * | 2018-10-09 | 2019-01-29 | 邱永标 | A kind of exchange conversion control circuit and device |
| CN114167936A (en) * | 2021-12-03 | 2022-03-11 | 中国科学院半导体研究所 | CMOS charge pump pumping device with wide working voltage range |
| CN116338281A (en) * | 2023-03-22 | 2023-06-27 | 辰芯半导体（深圳）有限公司 | High-voltage MOSFET bidirectional current sampling circuit, power management chip and mobile electronic device |
| CN117543964A (en) * | 2023-10-10 | 2024-02-09 | 骏盈半导体(上海)有限公司 | Charge pump circuit and detection circuit thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575964B (en) * | 2012-07-19 | 2016-03-23 | 快捷半导体(苏州)有限公司 | A kind of over-current detection circuit of power switch pipe and method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070087045A (en) * | 2004-12-13 | 2007-08-27 | 모사이드 테크놀로지스 코포레이션 | Phase-locked loop circuitry using charge pumps with current mirror circuitry |
| CN109286324A (en) * | 2018-10-09 | 2019-01-29 | 邱永标 | A kind of exchange conversion control circuit and device |
| CN114167936A (en) * | 2021-12-03 | 2022-03-11 | 中国科学院半导体研究所 | CMOS charge pump pumping device with wide working voltage range |
| CN116338281A (en) * | 2023-03-22 | 2023-06-27 | 辰芯半导体（深圳）有限公司 | High-voltage MOSFET bidirectional current sampling circuit, power management chip and mobile electronic device |
| CN117543964A (en) * | 2023-10-10 | 2024-02-09 | 骏盈半导体(上海)有限公司 | Charge pump circuit and detection circuit thereof |
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| CN117907671A (en) | 2024-04-19 |
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