CN117907671B - Charge pump detection circuits, chips and electronic devices - Google Patents

Charge pump detection circuits, chips and electronic devices Download PDF

Info

Publication number
CN117907671B
CN117907671B CN202410317555.2A CN202410317555A CN117907671B CN 117907671 B CN117907671 B CN 117907671B CN 202410317555 A CN202410317555 A CN 202410317555A CN 117907671 B CN117907671 B CN 117907671B
Authority
CN
China
Prior art keywords
circuit
voltage sampling
voltage
resistor
sampling unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202410317555.2A
Other languages
Chinese (zh)
Other versions
CN117907671A (en
Inventor
李响
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN202410317555.2A priority Critical patent/CN117907671B/en
Publication of CN117907671A publication Critical patent/CN117907671A/en
Application granted granted Critical
Publication of CN117907671B publication Critical patent/CN117907671B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)

Abstract

本发明提出一种电荷泵检测电路、芯片和电子设备，所述电荷泵检测电路包括电流输入电路、电流镜复制电路、电压采样电路和比较电路；电流输入电路用于提供输入的参考电流；电流镜复制电路的第一端与电流输入电路连接，用于按比例缩放参考电流，并将缩放后的电流提供给电压采样电路以驱动电压采样电路工作；电压采样电路的第一端与电流镜复制电路的第二端连接，其第二端与电流镜复制电路的第三端连接，其第三端与电源连接，其第四端与电荷泵的输出端连接，用于根据电源电压和电荷泵的输出电压生成采样电压；比较电路的第一端与电压采样电路的第五端连接，其第二端用于根据采样电压，输出相应的控制信号。该电路提高了电荷泵输出电压的检测精度。

The present invention proposes a charge pump detection circuit, a chip and an electronic device, wherein the charge pump detection circuit comprises a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit; the current input circuit is used to provide an input reference current; the first end of the current mirror copy circuit is connected to the current input circuit, and is used to scale the reference current in proportion, and provide the scaled current to the voltage sampling circuit to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected to the second end of the current mirror copy circuit, the second end is connected to the third end of the current mirror copy circuit, the third end is connected to the power supply, and the fourth end is connected to the output end of the charge pump, and is used to generate a sampling voltage according to the power supply voltage and the output voltage of the charge pump; the first end of the comparison circuit is connected to the fifth end of the voltage sampling circuit, and the second end is used to output a corresponding control signal according to the sampling voltage. The circuit improves the detection accuracy of the output voltage of the charge pump.

Description

电荷泵检测电路、芯片和电子设备Charge pump detection circuits, chips and electronic devices

技术领域Technical Field

本发明涉及电荷泵技术领域，尤其涉及一种电荷泵检测电路、芯片和电子设备。The present invention relates to the technical field of charge pumps, and in particular to a charge pump detection circuit, a chip and an electronic device.

背景技术Background technique

在集成电路设计中，电荷泵技术被广泛应用于多种领域，如高压驱动、电源管理及PLL（Phase-Locked Loop）锁相环等，其核心功能是基于输入电源电压创造出高于原电源的输出电压，如比电源电压高出5V、10V或12V等。然而，确保电荷泵电路稳定输出所需的电压是至关重要的技术挑战。当电荷泵的输出电压过高时，有可能导致高压侧MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor，金属-氧化物半导体场效应晶体管）器件的栅氧化层因承受过大电压而发生击穿，从而引发硬件损坏。相反，如果电荷泵的输出电压不足，则会限制MOSFET器件的有效导通深度，增加其导通电阻，随之而来的是工作时的发热加剧和静态功耗增大，长期处于这种大电阻运行状态，芯片将面临严重的过温风险和不可接受的能耗水平。In integrated circuit design, charge pump technology is widely used in many fields, such as high-voltage drive, power management and PLL (Phase-Locked Loop), etc. Its core function is to create an output voltage higher than the original power supply based on the input power supply voltage, such as 5V, 10V or 12V higher than the power supply voltage. However, ensuring that the charge pump circuit can stably output the required voltage is a critical technical challenge. When the output voltage of the charge pump is too high, it may cause the gate oxide layer of the high-side MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device to break down due to excessive voltage, thereby causing hardware damage. On the contrary, if the output voltage of the charge pump is insufficient, it will limit the effective conduction depth of the MOSFET device and increase its on-resistance, which will lead to increased heat generation and static power consumption during operation. If the chip is in this high-resistance operating state for a long time, it will face serious overheating risks and unacceptable energy consumption levels.

因此，如何能够准确地检测出电荷泵的输出电压是目前亟待解决的问题。Therefore, how to accurately detect the output voltage of the charge pump is a problem that needs to be solved urgently.

发明内容Summary of the invention

本发明旨在至少从一定程度上解决相关技术中的技术问题之一。The present invention aims to solve one of the technical problems in the related art at least to a certain extent.

为此，本发明的第一个目的在于提出一种电荷泵检测电路，该电路提高了电荷泵输出电压的检测精度。Therefore, a first object of the present invention is to provide a charge pump detection circuit, which improves the detection accuracy of the charge pump output voltage.

本发明的第二个目的在于提出一种芯片。The second objective of the present invention is to provide a chip.

本发明的第三个目的在于提出一种电子设备。A third objective of the present invention is to provide an electronic device.

为达到上述目的，本发明第一方面实施例提出了一种电荷泵检测电路，包括：电流输入电路、电流镜复制电路、电压采样电路和比较电路；其中，所述电流输入电路用于提供输入的参考电流；所述电流镜复制电路的第一端与所述电流输入电路连接，所述电流镜复制电路用于按比例缩放所述参考电流，并将缩放后的电流提供给所述电压采样电路，以驱动所述电压采样电路工作；所述电压采样电路的第一端与所述电流镜复制电路的第二端连接，所述电压采样电路的第二端与所述电流镜复制电路的第三端连接，所述电压采样电路的第三端与电源连接，所述电压采样电路的第四端与电荷泵的输出端连接，所述电压采样电路用于根据所述电源的电源电压和所述电荷泵的输出电压，生成采样电压；比较电路，所述比较电路的第一端与所述电压采样电路的第五端连接，所述比较电路的第二端用于根据所述采样电压，输出相应的控制信号。To achieve the above-mentioned purpose, the first aspect of the present invention proposes a charge pump detection circuit, comprising: a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit; wherein the current input circuit is used to provide an input reference current; the first end of the current mirror copy circuit is connected to the current input circuit, and the current mirror copy circuit is used to scale the reference current in proportion and provide the scaled current to the voltage sampling circuit to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected to the second end of the current mirror copy circuit, the second end of the voltage sampling circuit is connected to the third end of the current mirror copy circuit, the third end of the voltage sampling circuit is connected to a power supply, the fourth end of the voltage sampling circuit is connected to the output end of the charge pump, and the voltage sampling circuit is used to generate a sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; a comparison circuit, the first end of the comparison circuit is connected to the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used to output a corresponding control signal according to the sampling voltage.

本发明实施例的电荷泵检测电路包括电流输入电路、电流镜复制电路、电压采样电路和比较电路，其中，电流输入电路用于提供输入的参考电流；电流镜复制电路的第一端与电流输入电路连接，电流镜复制电路用于按比例缩放参考电流，并将缩放后的电流提供给电压采样电路，以驱动电压采样电路工作；电压采样电路的第一端与电流镜复制电路的第二端连接，电压采样电路的第二端与电流镜复制电路的第三端连接，电压采样电路的第三端与电源连接，电压采样电路的第四端与电荷泵的输出端连接，电压采样电路用于根据电源的电源电压和电荷泵的输出电压，生成采样电压；比较电路，比较电路的第一端与电压采样电路的第五端连接，比较电路的第二端用于根据采样电压，输出相应的控制信号。由此，该电路通过使用电流输入电路、电流镜复制电路、电压采样电路和比较电路，提高了电荷泵输出电压的检测精度。The charge pump detection circuit of the embodiment of the present invention includes a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit, wherein the current input circuit is used to provide an input reference current; the first end of the current mirror copy circuit is connected to the current input circuit, the current mirror copy circuit is used to scale the reference current in proportion, and provide the scaled current to the voltage sampling circuit to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected to the second end of the current mirror copy circuit, the second end of the voltage sampling circuit is connected to the third end of the current mirror copy circuit, the third end of the voltage sampling circuit is connected to the power supply, the fourth end of the voltage sampling circuit is connected to the output end of the charge pump, and the voltage sampling circuit is used to generate a sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; the comparison circuit, the first end of the comparison circuit is connected to the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used to output a corresponding control signal according to the sampling voltage. Therefore, the circuit improves the detection accuracy of the charge pump output voltage by using the current input circuit, the current mirror copy circuit, the voltage sampling circuit and the comparison circuit.

另外，本发明第一方面实施例提出的电荷泵检测电路还可以具有如下附加的技术特征：In addition, the charge pump detection circuit provided in the first aspect of the present invention may also have the following additional technical features:

根据本发明的一个实施例，所述电压采样电路，包括：According to one embodiment of the present invention, the voltage sampling circuit includes:

第一电压采样单元，所述第一电压采样单元的第一端作为所述电压采样电路的第三端，所述第一电压采样单元的第二端作为所述电压采样电路的第一端；a first voltage sampling unit, wherein a first end of the first voltage sampling unit serves as a third end of the voltage sampling circuit, and a second end of the first voltage sampling unit serves as a first end of the voltage sampling circuit;

第二电压采样单元，所述第二电压采样单元的第一端作为所述电压采样电路的第四端，所述第二电压采样单元的第二端作为所述电压采样电路的第二端，所述第二电压采样单元的第三端分别与所述第一电压采样单元的第二端和所述第一电压采样单元的第三端连接；a second voltage sampling unit, wherein a first end of the second voltage sampling unit serves as a fourth end of the voltage sampling circuit, a second end of the second voltage sampling unit serves as a second end of the voltage sampling circuit, and a third end of the second voltage sampling unit is connected to the second end of the first voltage sampling unit and the third end of the first voltage sampling unit respectively;

第三电压采样单元，所述第三电压采样单元的第一端与所述第二电压采样单元的第四端连接，所述第三电压采样单元的第二端作为所述电压采样电路的第五端，所述第三电压采样单元的第三端与所述第二电压采样单元的第二端连接。a third voltage sampling unit, wherein a first end of the third voltage sampling unit is connected to a fourth end of the second voltage sampling unit, a second end of the third voltage sampling unit serves as a fifth end of the voltage sampling circuit, and a third end of the third voltage sampling unit is connected to a second end of the second voltage sampling unit.

根据本发明的一个实施例，所述第一电压采样单元，包括：According to an embodiment of the present invention, the first voltage sampling unit includes:

第一电阻，所述第一电阻的第一端作为所述第一电压采样单元的第一端；a first resistor, wherein a first end of the first resistor serves as a first end of the first voltage sampling unit;

第二电阻，所述第二电阻的第一端与所述第一电阻的第二端连接；a second resistor, a first end of the second resistor being connected to a second end of the first resistor;

第一开关管，所述第一开关管的第一端与所述第二电阻的第二端连接，所述第一开关管的第二端作为所述第一电压采样单元的第二端，所述第一开关管的第三端作为所述第一电压采样单元的第三端。A first switch tube, wherein a first end of the first switch tube is connected to a second end of the second resistor, a second end of the first switch tube serves as a second end of the first voltage sampling unit, and a third end of the first switch tube serves as a third end of the first voltage sampling unit.

根据本发明的一个实施例，所述第二电压采样单元，包括：According to an embodiment of the present invention, the second voltage sampling unit includes:

第三电阻，所述第三电阻的第一端作为所述第二电压采样单元的第一端；a third resistor, a first end of the third resistor serving as a first end of the second voltage sampling unit;

第四电阻，所述第四电阻的第一端与所述第三电阻的第二端连接，所述第四电阻的第二端作为所述第二电压采样单元的第四端；a fourth resistor, wherein a first end of the fourth resistor is connected to a second end of the third resistor, and a second end of the fourth resistor serves as a fourth end of the second voltage sampling unit;

第二开关管，所述第二开关管的第一端与所述第四电阻的第二端连接，所述第二开关管的第二端作为所述第二电压采样单元的第二端，所述第二开关管的第三端作为所述第二电压采样单元的第三端。A second switch tube, wherein the first end of the second switch tube is connected to the second end of the fourth resistor, the second end of the second switch tube serves as the second end of the second voltage sampling unit, and the third end of the second switch tube serves as the third end of the second voltage sampling unit.

根据本发明的一个实施例，所述第三电压采样单元，包括：According to an embodiment of the present invention, the third voltage sampling unit includes:

第三开关管，所述第三开关管的第一端作为所述第三电压采样单元的第一端，所述第三开关管的第二端作为所述第三电压采样单元的第二端，所述第三开关管的第三端作为所述第三电压采样单元的第三端；a third switch tube, wherein the first end of the third switch tube serves as the first end of the third voltage sampling unit, the second end of the third switch tube serves as the second end of the third voltage sampling unit, and the third end of the third switch tube serves as the third end of the third voltage sampling unit;

采样电阻，所述采样电阻的第一端与所述第三开关管的第二端连接，所述采样电阻的第二端接地。A sampling resistor, wherein a first end of the sampling resistor is connected to a second end of the third switch tube, and a second end of the sampling resistor is grounded.

根据本发明的一个实施例，所述电流镜复制电路，包括：According to one embodiment of the present invention, the current mirror replica circuit includes:

第四开关管，所述第四开关管的第一端作为所述电流镜复制电路的第一端，所述第四开关管的第二端接地；a fourth switch tube, wherein a first end of the fourth switch tube serves as a first end of the current mirror replica circuit, and a second end of the fourth switch tube is grounded;

第五开关管，所述第五开关管的第一端作为所述电流镜复制电路的第二端，所述第五开关管的第二端接地；a fifth switch tube, wherein a first end of the fifth switch tube serves as a second end of the current mirror replica circuit, and a second end of the fifth switch tube is grounded;

第六开关管，所述第六开关管的第一端作为所述电流镜复制电路的第三端，所述第六开关管的第二端接地，所述第六开关管的第三端分别与所述第四开关管的第一端、所述第四开关管的第三端和所述第五开关管的第三端连接。A sixth switch tube, wherein the first end of the sixth switch tube serves as the third end of the current mirror replica circuit, the second end of the sixth switch tube is grounded, and the third end of the sixth switch tube is respectively connected to the first end of the fourth switch tube, the third end of the fourth switch tube, and the third end of the fifth switch tube.

根据本发明的一个实施例，所述比较电路，包括：According to one embodiment of the present invention, the comparison circuit includes:

比较器，所述比较器的正输入端作为所述比较电路的第一端，所述比较器的负输入端作为参考电压的输入端，所述比较器的输出端作为所述比较电路的第二端。A comparator, wherein the positive input terminal of the comparator serves as the first terminal of the comparison circuit, the negative input terminal of the comparator serves as the input terminal of the reference voltage, and the output terminal of the comparator serves as the second terminal of the comparison circuit.

根据本发明的一个实施例，第一开关管至第六开关管为NMOS管。According to an embodiment of the present invention, the first to sixth switch tubes are NMOS tubes.

根据本发明的一个实施例，第一电阻和第二电阻的阻值之和等于第三电阻和第四电阻的阻值之和。According to an embodiment of the present invention, the sum of the resistance values of the first resistor and the second resistor is equal to the sum of the resistance values of the third resistor and the fourth resistor.

根据本发明的一个实施例，所述采样电压的表达式为：According to one embodiment of the present invention, the expression of the sampling voltage is:

Vsample=[（Vcp-Vs）/（R3+R4）]*Rsample；Vsample=[(Vcp-Vs)/(R3+R4)]*Rsample;

其中，Vsample为所述采样电压，Vcp为所述电荷泵的输出电压，Vs为所述电源电压，R3为所述第三电阻的阻值，R4为所述第四电阻的阻值，Rsample为采样电阻的阻值。Wherein, Vsample is the sampled voltage, Vcp is the output voltage of the charge pump, Vs is the power supply voltage, R3 is the resistance value of the third resistor, R4 is the resistance value of the fourth resistor, and Rsample is the resistance value of the sampling resistor.

为达到上述目的，本发明第二方面实施例提出了一种芯片，其包括上述的电荷泵检测电路。To achieve the above object, a second embodiment of the present invention provides a chip, which includes the above charge pump detection circuit.

本发明实施例的芯片，通过使用上述的电荷泵检测电路，提高了电荷泵输出电压的检测精度。The chip according to the embodiment of the present invention improves the detection accuracy of the charge pump output voltage by using the above-mentioned charge pump detection circuit.

为达到上述目的，本发明第三方面实施例提出了一种电子设备，其包括上述的芯片。To achieve the above object, a third aspect of the present invention provides an electronic device, which includes the above chip.

本发明实施例的电子设备，通过使用上述的芯片，提高了电荷泵输出电压的检测精度。The electronic device according to the embodiment of the present invention improves the detection accuracy of the charge pump output voltage by using the above chip.

本发明附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

本发明上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present invention will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

图1是相关技术中电荷泵检测电路的电路图；FIG1 is a circuit diagram of a charge pump detection circuit in the related art;

图2是根据本发明一个实施例的电荷泵检测电路的示意图。FIG. 2 is a schematic diagram of a charge pump detection circuit according to an embodiment of the present invention.

具体实施方式Detailed ways

为了使本领域普通人员更好地理解本发明的技术方案，下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述。In order to enable ordinary persons in the art to better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings.

需要说明的是，本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置和方法的例子。It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Instead, they are merely examples of devices and methods consistent with some aspects of the present invention as detailed in the appended claims.

下面参考附图描述本发明实施例的电荷泵检测电路、芯片和电子设备。The charge pump detection circuit, chip and electronic device according to the embodiments of the present invention are described below with reference to the accompanying drawings.

在介绍本发明实施例的电荷泵检测电路之前，先来介绍下相关技术中的电荷泵检测电路。Before introducing the charge pump detection circuit according to the embodiment of the present invention, the charge pump detection circuit in the related art is first introduced.

如图1所示，图1是将电源电压Vs作为高压PMOS管的栅极电压输入，而将电荷泵的输出电压Vcp接入该PMOS管的源极。接着，通过一个电阻分压网络对电荷泵的输出电压Vcp进行采样，得到一个反映实际输出电压的采样电压。再将这个采样电压与参考电压Vref在比较器中进行对比，以判断电荷泵的输出电压是否达到所需的电压。As shown in FIG1 , FIG1 is a diagram in which the power supply voltage Vs is used as the gate voltage input of the high-voltage PMOS tube, and the output voltage Vcp of the charge pump is connected to the source of the PMOS tube. Then, the output voltage Vcp of the charge pump is sampled through a resistor voltage divider network to obtain a sampled voltage reflecting the actual output voltage. This sampled voltage is then compared with the reference voltage Vref in a comparator to determine whether the output voltage of the charge pump reaches the required voltage.

然而，相关技术中电荷泵检测电路存在以下不足：在精度问题上，此种检测方法的精度受限，尤其容易受到温度变化的影响，温度变化可能显著影响电阻分压的准确性。However, the charge pump detection circuit in the related art has the following deficiencies: in terms of accuracy, the accuracy of this detection method is limited and it is particularly susceptible to temperature changes, which may significantly affect the accuracy of the resistor voltage divider.

为此，本发明提出了一种电荷泵检测电路，该电路包括通过使用电流输入电路、电流镜复制电路、电压采样电路和比较电路，提高了电荷泵输出电压的检测精度。To this end, the present invention proposes a charge pump detection circuit, which improves the detection accuracy of the charge pump output voltage by using a current input circuit, a current mirror replication circuit, a voltage sampling circuit and a comparison circuit.

图2是根据本发明实施例的电荷泵检测电路的示意图。FIG. 2 is a schematic diagram of a charge pump detection circuit according to an embodiment of the present invention.

如图2所示，本发明实施例的电荷泵检测电路，包括：电流输入电路10、电流镜复制电路20、电压采样电路30和比较电路40。As shown in FIG. 2 , the charge pump detection circuit according to the embodiment of the present invention includes: a current input circuit 10 , a current mirror copy circuit 20 , a voltage sampling circuit 30 and a comparison circuit 40 .

其中，电流输入电路10用于提供输入的参考电流IB。电流镜复制电路20的第一端与电流输入电路10连接，电流镜复制电路20用于按比例缩放参考电流IB（如将参考电流IB放大k1倍），并将缩放后的电流提供给电压采样电路30，以驱动电压采样电路30工作。电压采样电路30的第一端与电流镜复制电路20的第二端连接，电压采样电路30的第二端与电流镜复制电路20的第三端连接，电压采样电路30的第三端与电源连接，电压采样电路30的第四端与电荷泵的输出端连接，电压采样电路30用于根据电源的电源电压Vs和电荷泵的输出电压Vcp，生成采样电压。比较电路40的第一端与电压采样电路30的第五端连接，比较电路40的第二端用于根据采样电压，输出相应的控制信号。The current input circuit 10 is used to provide an input reference current I B . The first end of the current mirror copy circuit 20 is connected to the current input circuit 10, and the current mirror copy circuit 20 is used to scale the reference current I B (such as amplifying the reference current I B by k 1 times), and provide the scaled current to the voltage sampling circuit 30 to drive the voltage sampling circuit 30 to work. The first end of the voltage sampling circuit 30 is connected to the second end of the current mirror copy circuit 20, the second end of the voltage sampling circuit 30 is connected to the third end of the current mirror copy circuit 20, the third end of the voltage sampling circuit 30 is connected to the power supply, and the fourth end of the voltage sampling circuit 30 is connected to the output end of the charge pump. The voltage sampling circuit 30 is used to generate a sampling voltage according to the power supply voltage Vs of the power supply and the output voltage Vcp of the charge pump. The first end of the comparison circuit 40 is connected to the fifth end of the voltage sampling circuit 30, and the second end of the comparison circuit 40 is used to output a corresponding control signal according to the sampling voltage.

如图2所示，电压采样电路30，包括：第一电压采样单元31、第二电压采样单元32和第三电压采样单元33。其中，第一电压采样单元31的第一端作为电压采样电路30的第三端，第一电压采样单元31的第二端作为电压采样电路30的第一端。第二电压采样单元32的第一端作为电压采样电路30的第四端，第二电压采样单元32的第二端作为电压采样电路30的第二端，第二电压采样单元32的第三端分别与第一电压采样单元31的第二端和第一电压采样单元31的第三端连接。第三电压采样单元33的第一端与第二电压采样单元32的第四端连接，第三电压采样单元33的第二端作为电压采样电路30的第五端，第三电压采样单元33的第三端与第二电压采样单元32的第二端连接。As shown in FIG2 , the voltage sampling circuit 30 includes: a first voltage sampling unit 31, a second voltage sampling unit 32, and a third voltage sampling unit 33. The first end of the first voltage sampling unit 31 serves as the third end of the voltage sampling circuit 30, and the second end of the first voltage sampling unit 31 serves as the first end of the voltage sampling circuit 30. The first end of the second voltage sampling unit 32 serves as the fourth end of the voltage sampling circuit 30, the second end of the second voltage sampling unit 32 serves as the second end of the voltage sampling circuit 30, and the third end of the second voltage sampling unit 32 is connected to the second end of the first voltage sampling unit 31 and the third end of the first voltage sampling unit 31, respectively. The first end of the third voltage sampling unit 33 is connected to the fourth end of the second voltage sampling unit 32, the second end of the third voltage sampling unit 33 serves as the fifth end of the voltage sampling circuit 30, and the third end of the third voltage sampling unit 33 is connected to the second end of the second voltage sampling unit 32.

如图2所示，第一电压采样单元31，包括：第一电阻R1、第二电阻R2和第一开关管M1。其中，第一电阻R1的第一端作为第一电压采样单元31的第一端。第二电阻R2的第一端与第一电阻R1的第二端连接。第一开关管M1的第一端与第二电阻R2的第二端连接，第一开关管M1的第二端作为第一电压采样单元31的第二端，第一开关管M1的第三端作为第一电压采样单元31的第三端。As shown in FIG2 , the first voltage sampling unit 31 includes: a first resistor R1, a second resistor R2, and a first switch tube M1. The first end of the first resistor R1 serves as the first end of the first voltage sampling unit 31. The first end of the second resistor R2 is connected to the second end of the first resistor R1. The first end of the first switch tube M1 is connected to the second end of the second resistor R2, the second end of the first switch tube M1 serves as the second end of the first voltage sampling unit 31, and the third end of the first switch tube M1 serves as the third end of the first voltage sampling unit 31.

如图2所示，第二电压采样单元32，包括：第三电阻R3、第四电阻R4和第二开关管M2。其中，第三电阻R3的第一端作为第二电压采样单元32的第一端。第四电阻R4的第一端与第三电阻R3的第二端连接，第四电阻R4的第二端作为第二电压采样单元32的第四端。第二开关管M2的第一端与第四电阻R4的第二端连接，第二开关管M2的第二端作为第二电压采样单元32的第二端，第二开关管M2的第三端作为第二电压采样单元32的第三端。As shown in FIG2 , the second voltage sampling unit 32 includes: a third resistor R3, a fourth resistor R4, and a second switch tube M2. The first end of the third resistor R3 serves as the first end of the second voltage sampling unit 32. The first end of the fourth resistor R4 is connected to the second end of the third resistor R3, and the second end of the fourth resistor R4 serves as the fourth end of the second voltage sampling unit 32. The first end of the second switch tube M2 is connected to the second end of the fourth resistor R4, and the second end of the second switch tube M2 serves as the second end of the second voltage sampling unit 32, and the third end of the second switch tube M2 serves as the third end of the second voltage sampling unit 32.

在本发明的实施例中，第一电阻R1和第二电阻R2的阻值之和等于第三电阻R3和第四电阻R4的阻值之和。也就是说，R1+R2=R3+R4。作为一种可实现的方式，R1=R3，为ploy电阻，ploy电阻的温漂是正的，所以R1和R3阻值随着温度增大而增大；R2=R4，为Nwell电阻，Nwell电阻的温漂是负的，所以R2和R4阻值随着温度增大而减小，本发明可以通过调节这两种电阻的比值，即调节poly电阻和nwell电阻的比值，可以使得电阻阻值之和变化极小，d（R1+R2）/dT以及d（R3+R4）/dT很小。In an embodiment of the present invention, the sum of the resistance values of the first resistor R1 and the second resistor R2 is equal to the sum of the resistance values of the third resistor R3 and the fourth resistor R4. That is, R1+R2=R3+R4. As a feasible method, R1=R3, which is a ploy resistor, and the temperature drift of the ploy resistor is positive, so the resistance values of R1 and R3 increase with increasing temperature; R2=R4, which is an Nwell resistor, and the temperature drift of the Nwell resistor is negative, so the resistance values of R2 and R4 decrease with increasing temperature. The present invention can adjust the ratio of these two resistors, that is, adjust the ratio of the poly resistor and the nwell resistor, so that the sum of the resistance values changes very little, and d(R1+R2)/dT and d(R3+R4)/dT are very small.

如图2所示，第三电压采样单元33，包括：第三开关管M3和采样电阻Rsample。其中，第三开关管M3的第一端作为第三电压采样单元33的第一端，第三开关管M3的第二端作为第三电压采样单元33的第二端，第三开关管M3的第三端作为第三电压采样单元33的第三端。采样电阻Rsample的第一端与第三开关管M3的第二端连接，采样电阻Rsample的第二端接地。As shown in FIG2 , the third voltage sampling unit 33 includes: a third switch tube M3 and a sampling resistor Rsample. The first end of the third switch tube M3 serves as the first end of the third voltage sampling unit 33, the second end of the third switch tube M3 serves as the second end of the third voltage sampling unit 33, and the third end of the third switch tube M3 serves as the third end of the third voltage sampling unit 33. The first end of the sampling resistor Rsample is connected to the second end of the third switch tube M3, and the second end of the sampling resistor Rsample is grounded.

如图2所示，电流镜复制电路20，包括：第四开关管M4、第五开关管M5和第六开关管M6。其中，第四开关管M4的第一端作为电流镜复制电路20的第一端，第四开关管M4的第二端接地。第五开关管M5的第一端作为电流镜复制电路20的第二端，第五开关管M5的第二端接地。第六开关管M6的第一端作为电流镜复制电路20的第三端，第六开关管M6的第二端接地，第六开关管M6的第三端分别与第四开关管M4的第一端、第四开关管M4的第三端和第五开关管M5的第三端连接。As shown in FIG2 , the current mirror replica circuit 20 includes: a fourth switch tube M4, a fifth switch tube M5, and a sixth switch tube M6. The first end of the fourth switch tube M4 serves as the first end of the current mirror replica circuit 20, and the second end of the fourth switch tube M4 is grounded. The first end of the fifth switch tube M5 serves as the second end of the current mirror replica circuit 20, and the second end of the fifth switch tube M5 is grounded. The first end of the sixth switch tube M6 serves as the third end of the current mirror replica circuit 20, the second end of the sixth switch tube M6 is grounded, and the third end of the sixth switch tube M6 is respectively connected to the first end of the fourth switch tube M4, the third end of the fourth switch tube M4, and the third end of the fifth switch tube M5.

在本发明的实施例中，第一开关管M1至第六开关管M6为NMOS管，第一开关管M1至第六开关管M6的第一端为漏极，第一开关管M1至第六开关管M6的第二端为源极，第一开关管M1至第六开关管M6的第三端为栅极。In the embodiment of the present invention, the first switch tube M1 to the sixth switch tube M6 are NMOS tubes, the first ends of the first switch tube M1 to the sixth switch tube M6 are drains, the second ends of the first switch tube M1 to the sixth switch tube M6 are sources, and the third ends of the first switch tube M1 to the sixth switch tube M6 are gates.

如图2所示，比较电路40，包括：比较器AMP。其中，比较器AMP的正输入端作为比较电路40的第一端，比较器AMP的负输入端作为参考电压Vref的输入端，比较器AMP的输出端作为比较电路40的第二端。As shown in FIG2 , the comparison circuit 40 includes a comparator AMP, wherein the positive input terminal of the comparator AMP serves as the first terminal of the comparison circuit 40 , the negative input terminal of the comparator AMP serves as the input terminal of the reference voltage Vref, and the output terminal of the comparator AMP serves as the second terminal of the comparison circuit 40 .

在本发明的实施例中，电流镜复制电路20可以将参考电流IB按照k1倍进行放大，这样流过第四开关管M4、第五开关管M5和第六开关管M6的电流比例为1：k1：k1。其中，放大电流的作用是为了使得第一开关管M1和第二开关管M2工作在饱和区。假设流过第五开关管M5的电流为I1，流过第六开关管M6的电流为I2，那么I1=I2。由于电源电压Vs和电荷泵的输出电压Vcp两路的偏置电流I1、I2一致，所以电荷泵的输出电压Vcp和电源电压Vs的电压差产生的电流就表现为I3，I3的表达式为I3=（Vcp-Vs）/（R3+R4），之后便可得到采样电压Vsample，采样电压Vsample的表达式为：Vsample=[（Vcp-Vs）/（R3+R4）]*Rsample。其中，Vsample为采样电压，Vcp为电荷泵的输出电压Vcp，Vs为电源电压，R3为第三电阻R3的阻值，R4为第四电阻R4的阻值，Rsample为采样电阻Rsample的阻值。In the embodiment of the present invention, the current mirror replica circuit 20 can amplify the reference current IB by k1 times, so that the current ratio flowing through the fourth switch tube M4, the fifth switch tube M5 and the sixth switch tube M6 is 1: k1 : k1 . The purpose of amplifying the current is to make the first switch tube M1 and the second switch tube M2 work in the saturation region. Assuming that the current flowing through the fifth switch tube M5 is I1 , and the current flowing through the sixth switch tube M6 is I2 , then I1 = I2 . Since the bias currents I1 and I2 of the power supply voltage Vs and the output voltage Vcp of the charge pump are consistent, the current generated by the voltage difference between the output voltage Vcp of the charge pump and the power supply voltage Vs is expressed as I3 , and the expression of I3 is I3 = (Vcp-Vs)/ (R3+R4), and then the sampling voltage Vsample can be obtained, and the expression of the sampling voltage Vsample is: Vsample=[(Vcp-Vs)/ (R3+R4)]*Rsample. Wherein, Vsample is the sampling voltage, Vcp is the output voltage Vcp of the charge pump, Vs is the power supply voltage, R3 is the resistance value of the third resistor R3, R4 is the resistance value of the fourth resistor R4, and Rsample is the resistance value of the sampling resistor Rsample.

然后，在比较器AMP中比较采样电压Vsample和参考电压Vref，并根据比较结果输出相应的控制信号，其中，当Vsample＞Vref时，比较器AMP输出第一控制信号；当Vsample≤Vref时，比较器AMP输出第二控制信号。这句话可以理解为，当电荷泵的输出电压Vcp比电源电压Vs高出参考电压Vref时，比较器AMP输出第一控制信号；当电荷泵的输出电压Vcp比电源电压Vs低于或等于参考电压Vref时，比较器AMP输出第二控制信号。其实质也是对电荷泵的输出电压Vcp进行监测，并根据监测结果发出控制信号。Then, the sample voltage Vsample is compared with the reference voltage Vref in the comparator AMP, and a corresponding control signal is output according to the comparison result, wherein when Vsample＞Vref, the comparator AMP outputs a first control signal; when Vsample≤Vref, the comparator AMP outputs a second control signal. This sentence can be understood as, when the output voltage Vcp of the charge pump is higher than the power supply voltage Vs by the reference voltage Vref, the comparator AMP outputs a first control signal; when the output voltage Vcp of the charge pump is lower than or equal to the reference voltage Vref than the power supply voltage Vs, the comparator AMP outputs a second control signal. In essence, it also monitors the output voltage Vcp of the charge pump and issues a control signal according to the monitoring result.

综上所述，本发明实施例的电荷泵检测电路包括电流输入电路、电流镜复制电路、电压采样电路和比较电路，其中，电流输入电路用于提供输入的参考电流；电流镜复制电路的第一端与电流输入电路连接，电流镜复制电路用于按比例缩放参考电流，并将缩放后的电流提供给电压采样电路，以驱动电压采样电路工作；电压采样电路的第一端与电流镜复制电路的第二端连接，电压采样电路的第二端与电流镜复制电路的第三端连接，电压采样电路的第三端与电源连接，电压采样电路的第四端与电荷泵的输出端连接，电压采样电路用于根据电源的电源电压和电荷泵的输出电压，生成采样电压；比较电路，比较电路的第一端与电压采样电路的第五端连接，比较电路的第二端用于根据采样电压，输出相应的控制信号。由此，该电路包括电流输入电路、电流镜复制电路、电压采样电路和比较电路，该检测电路结构的检测阈值对温度不敏感，提高了电荷泵输出电压的检测精度，并且该检测电路结构的工艺一致性较高，无需在芯片出厂后对该电路进行调修。In summary, the charge pump detection circuit of the embodiment of the present invention includes a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit, wherein the current input circuit is used to provide an input reference current; the first end of the current mirror copy circuit is connected to the current input circuit, the current mirror copy circuit is used to scale the reference current in proportion, and provide the scaled current to the voltage sampling circuit to drive the voltage sampling circuit to work; the first end of the voltage sampling circuit is connected to the second end of the current mirror copy circuit, the second end of the voltage sampling circuit is connected to the third end of the current mirror copy circuit, the third end of the voltage sampling circuit is connected to the power supply, the fourth end of the voltage sampling circuit is connected to the output end of the charge pump, and the voltage sampling circuit is used to generate a sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump; the comparison circuit, the first end of the comparison circuit is connected to the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used to output a corresponding control signal according to the sampling voltage. Therefore, the circuit includes a current input circuit, a current mirror copy circuit, a voltage sampling circuit and a comparison circuit, the detection threshold of the detection circuit structure is insensitive to temperature, the detection accuracy of the charge pump output voltage is improved, and the process consistency of the detection circuit structure is high, and there is no need to adjust the circuit after the chip leaves the factory.

基于上述实施例，本发明还提出了一种芯片，其包括电荷泵检测电路。Based on the above embodiments, the present invention further proposes a chip, which includes a charge pump detection circuit.

本发明实施例的芯片，通过使用上述的电荷泵检测电路，提高了电荷泵输出电压的检测精度。The chip according to the embodiment of the present invention improves the detection accuracy of the charge pump output voltage by using the above-mentioned charge pump detection circuit.

基于上述实施例，本发明还提出了一种电子设备，其包括上述的芯片。Based on the above embodiments, the present invention further proposes an electronic device, which includes the above chip.

本发明实施例的电子设备，通过使用上述的芯片，提高了电荷泵输出电压的检测精度。The electronic device according to the embodiment of the present invention improves the detection accuracy of the charge pump output voltage by using the above chip.

在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

另外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

Claims (8)

1. A charge pump detection circuit, comprising: the current input circuit, the current mirror copying circuit, the voltage sampling circuit and the comparison circuit; wherein,
The current input circuit is used for providing input reference current;
The first end of the current mirror copying circuit is connected with the current input circuit, and the current mirror copying circuit is used for scaling the reference current and providing the scaled current for the voltage sampling circuit so as to drive the voltage sampling circuit to work;
The first end of the voltage sampling circuit is connected with the second end of the current mirror copying circuit, the second end of the voltage sampling circuit is connected with the third end of the current mirror copying circuit, the third end of the voltage sampling circuit is connected with the output end of a power supply, the fourth end of the voltage sampling circuit is connected with the output end of a charge pump, and the voltage sampling circuit is used for generating sampling voltage according to the power supply voltage of the power supply and the output voltage of the charge pump;
The first end of the comparison circuit is connected with the fifth end of the voltage sampling circuit, and the second end of the comparison circuit is used for outputting a corresponding control signal according to the sampling voltage;
Wherein, the voltage sampling circuit includes:
A first voltage sampling unit, wherein a first end of the first voltage sampling unit is used as a third end of the voltage sampling circuit, and a second end of the first voltage sampling unit is used as a first end of the voltage sampling circuit;
The first end of the second voltage sampling unit is used as the fourth end of the voltage sampling circuit, the second end of the second voltage sampling unit is used as the second end of the voltage sampling circuit, and the third end of the second voltage sampling unit is respectively connected with the second end of the first voltage sampling unit and the third end of the first voltage sampling unit;
the first end of the third voltage sampling unit is connected with the fourth end of the second voltage sampling unit, the second end of the third voltage sampling unit is used as the fifth end of the voltage sampling circuit, and the third end of the third voltage sampling unit is connected with the second end of the second voltage sampling unit;
wherein, the first voltage sampling unit includes:
A first resistor, wherein a first end of the first resistor is used as a first end of the first voltage sampling unit;
The first end of the second resistor is connected with the second end of the first resistor;
The first end of the first switch tube is connected with the second end of the second resistor, the second end of the first switch tube is used as the second end of the first voltage sampling unit, and the third end of the first switch tube is used as the third end of the first voltage sampling unit;
wherein the second voltage sampling unit includes:
a third resistor, a first end of which is used as a first end of the second voltage sampling unit;
The first end of the fourth resistor is connected with the second end of the third resistor, and the second end of the fourth resistor is used as the fourth end of the second voltage sampling unit;
the first end of the second switching tube is connected with the second end of the fourth resistor, the second end of the second switching tube is used as the second end of the second voltage sampling unit, and the third end of the second switching tube is used as the third end of the second voltage sampling unit;
the expression of the sampling voltage is as follows:
Vsample=[（Vcp-Vs）/（R3+R4）]*Rsample；
Wherein Vsample is the sampling voltage, vcp is the output voltage of the charge pump, vs is the power supply voltage, R3 is the resistance of the third resistor, R4 is the resistance of the fourth resistor, and Rsample is the resistance of the sampling resistor.
2. The charge pump detection circuit of claim 1 wherein the third voltage sampling unit comprises:
A third switching tube, wherein a first end of the third switching tube is used as a first end of the third voltage sampling unit, a second end of the third switching tube is used as a second end of the third voltage sampling unit, and a third end of the third switching tube is used as a third end of the third voltage sampling unit;
and the first end of the sampling resistor is connected with the second end of the third switching tube, and the second end of the sampling resistor is grounded.
3. The charge pump detection circuit of claim 1 wherein the current mirror replica circuit comprises:
a fourth switching tube, wherein a first end of the fourth switching tube is used as a first end of the current mirror replica circuit, and a second end of the fourth switching tube is grounded;
a fifth switching tube, a first end of which is used as a second end of the current mirror replica circuit, and a second end of which is grounded;
And the first end of the sixth switching tube is used as the third end of the current mirror replication circuit, the second end of the sixth switching tube is grounded, and the third end of the sixth switching tube is respectively connected with the first end of the fourth switching tube, the third end of the fourth switching tube and the third end of the fifth switching tube.
4. The charge pump detection circuit of claim 1 wherein the comparison circuit comprises:
And the positive input end of the comparator is used as the first end of the comparison circuit, the negative input end of the comparator is used as the input end of the reference voltage, and the output end of the comparator is used as the second end of the comparison circuit.
5. A charge pump detection circuit according to any one of claims 1 to 3 wherein the first to sixth switching transistors are NMOS transistors.
6. The charge pump detection circuit of claim 1 wherein a sum of resistance values of the first resistor and the second resistor is equal to a sum of resistance values of the third resistor and the fourth resistor.
7. A chip comprising a charge pump detection circuit as claimed in any one of claims 1 to 6.
8. An electronic device comprising the chip of claim 7.
CN202410317555.2A 2024-03-20 2024-03-20 Charge pump detection circuits, chips and electronic devices Active CN117907671B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410317555.2A CN117907671B (en) 2024-03-20 2024-03-20 Charge pump detection circuits, chips and electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410317555.2A CN117907671B (en) 2024-03-20 2024-03-20 Charge pump detection circuits, chips and electronic devices

Publications (2)

Publication Number Publication Date
CN117907671A CN117907671A (en) 2024-04-19
CN117907671B true CN117907671B (en) 2024-05-28

Family

ID=90686254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410317555.2A Active CN117907671B (en) 2024-03-20 2024-03-20 Charge pump detection circuits, chips and electronic devices

Country Status (1)

Country Link
CN (1) CN117907671B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070087045A (en) * 2004-12-13 2007-08-27 모사이드 테크놀로지스 코포레이션 Phase-locked loop circuit using charge pump with current mirror circuit
CN109286324A (en) * 2018-10-09 2019-01-29 邱永标 An AC conversion control circuit and device
CN114167936A (en) * 2021-12-03 2022-03-11 中国科学院半导体研究所 CMOS Charge Pump Pumping Device with Wide Operating Voltage Range
CN116338281A (en) * 2023-03-22 2023-06-27 辰芯半导体（深圳）有限公司 High-voltage MOSFET bidirectional current sampling circuit, power management chip and mobile electronic device
CN117543964A (en) * 2023-10-10 2024-02-09 骏盈半导体(上海)有限公司 Charge pump circuit and detection circuit thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103575964B (en) * 2012-07-19 2016-03-23 快捷半导体(苏州)有限公司 A kind of over-current detection circuit of power switch pipe and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070087045A (en) * 2004-12-13 2007-08-27 모사이드 테크놀로지스 코포레이션 Phase-locked loop circuit using charge pump with current mirror circuit
CN109286324A (en) * 2018-10-09 2019-01-29 邱永标 An AC conversion control circuit and device
CN114167936A (en) * 2021-12-03 2022-03-11 中国科学院半导体研究所 CMOS Charge Pump Pumping Device with Wide Operating Voltage Range
CN116338281A (en) * 2023-03-22 2023-06-27 辰芯半导体（深圳）有限公司 High-voltage MOSFET bidirectional current sampling circuit, power management chip and mobile electronic device
CN117543964A (en) * 2023-10-10 2024-02-09 骏盈半导体(上海)有限公司 Charge pump circuit and detection circuit thereof

Also Published As

Publication number Publication date
CN117907671A (en) 2024-04-19

Similar Documents

Publication Publication Date Title
US9882558B1 (en) Power-on reset circuit
CN100451663C (en) Power supply level detector
US9666287B2 (en) Voltage detector, method for setting reference voltage and computer readable medium
Choudhury et al. Analytical model for TDDB-based performance degradation in combinational logic
CN110989760B (en) Detection circuit based on band-gap reference voltage and band-gap reference voltage circuit
Sutaria et al. BTI-induced aging under random stress waveforms: Modeling, simulation and silicon validation
US8030985B2 (en) System and method for compensating pulse generator for process and temperature variations
TW200403925A (en) Semiconductor device
CN112444732A (en) Chip aging state monitoring circuit and method, chip and server
CN106961266A (en) Power-on reset circuit
CN117907671B (en) Charge pump detection circuits, chips and electronic devices
CN112653431B (en) Low-voltage latch circuit
CN106533406A (en) MOS tube parameter degradation circuit, test circuit and early warning circuit
CN107039299A (en) Metal-oxide-semiconductor parameter degradation circuit and metal-oxide-semiconductor parameter degradation early warning circuit
CN115065226B (en) Soft start circuit for DC-DC converter
CN117792023A (en) Current sampling judgment circuit with injection compensation
KR19990007180A (en) Data judgment circuit and data judgment method
CN117832206A (en) Resistance adjustment circuit, current adjustment circuit and adjustment method of current adjustment circuit
JP6216171B2 (en) Power circuit
CN113655358B (en) Power tube test circuit and power protection chip
WO2022142624A1 (en) Interface circuit
CN101510106B (en) Current Control Devices Applied to Transistors
CN110048368A (en) A kind of high-speed, high precision under-voltage protecting circuit
CN116449249A (en) Silicon carbide MOSFET short circuit detection circuit and device
CN103594123B (en) Non-volatile memory and calibration method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant