CN117895332A - Semiconductor laser element with spin polarization hole tunneling layer - Google Patents
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Abstract
The invention relates to a semiconductor laser element with spin polarization hole tunneling layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the spin polarization hole tunneling layer is arranged between the upper waveguide layer and the electron blocking layer and/or between the active layer and the upper waveguide layer, and is Cr 2 O 3 @LuFeO 3 ，Cr I 3 @LuFe 2 O 4 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、CoFe 2 O 4 @SrT iO 3 、LaCuMnO 3 @CaRuT iO 3 Any one or any combination of three-dimensional quantum dot structures, the spin-polarized hole tunneling layer forms current-induced spin transmission moment through interlayer exchange coupling and ladder-shaped hysteresis regression line, so that stimulated radiation efficiency and peak value of the laser element are enhancedThe gain uniformity reduces the excitation threshold of the laser element and improves the optical power and slope efficiency.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a semiconductor laser element with a spin polarization hole tunneling layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The conventional nitride semiconductor laser has the following problems: 1) The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, and the generation of a strong QCSE quantum confinement Stark effect limits the improvement of the electric lasing gain of the laser; 2) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 3) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the hole injection barrier is improved by a quantum well polarized electric field, the holes overflow an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, the laser can be started and generate laser only under the condition of high current, and the output laser beam is weak in performance, efficiency and service life.
Disclosure of Invention
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor laser device having a simple structure and a reasonable design.
The invention realizes the above purpose through the following technical scheme:
the utility model provides a semiconductor laser component with spin polarization hole tunneling layer, includes substrate, lower confinement layer, lower waveguide layer, active layer, last waveguide layer, electron blocking layer, the upper confinement layer that sets gradually from bottom to top, its characterized in that: at least one of the upper and lower parts of the upper waveguide layer is provided with a spin-polarized hole tunneling layer, and the spin-polarized hole tunneling layer is Cr 2 O 3 @LuFeO 3 、Cr I 3 @LuFe 2 O 4 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、CoFe 2 O 4 @SrTiO 3 、LaCuMnO 3 @CaRuTiO 3 Any one or any combination of three-dimensional quantum dot structures.
Further, the spin-polarized hole tunneling layer has a thickness of 0.5 to 500nm.
Further, any combination of spin-polarized hole tunneling layers includes three-dimensional quantum dot structures of the following binary combinations:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 、Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrTiO 3 、Cr 2 O 3 @LuFeO 3 /LaCuMnO 3 @CaRuTiO 3 、Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrT iO 3 、Cr I 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuTiO 3 . Further, any combination of spin-polarized hole tunneling layers includes three-dimensional quantum dot structures of the following ternary combinations: cr (Cr) 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 、
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 、
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、
Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、
Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
Further, any combination of spin-polarized hole tunneling layers includes the following four-component three-dimensional quantum dot structure:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
further, any combination of spin-polarized hole tunneling layers includes a three-dimensional quantum dot structure of the following five-membered combination:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
further, the active layer is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, inN, alInN and GaN, the thickness is 10-80 m, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN and AlInN, and the thickness is 1-12 nm.
Further, the lower limiting layer comprises any one or any combination of GaN, al GaN, inGaN, alInGaN, alN, inN and AlInN, and the thickness is 50-5000 nm.
Further, the lower waveguide layer and the upper waveguide layer comprise any one or any combination of GaN, inGaN and AlInGaN, and the thickness is 50-1000 nm.
Further, the electron blocking layer and the upper confinement layer comprise any one or any combination of GaN, al InGaN, al N and Al InN, and the thickness is 20-1000 nm.
Further, the substrate comprises sapphire, silicon, ge, siC, al N, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/Al N composite substrate, sapphire/SiNx, sapphire/Si O2/Si Nx composite substrate, and magnesia-alumina spinel MgA l 2 O 4 、MgO、ZnO、ZrB 2 、LiA l O 2 And Li GaO 2 Any one of the composite substrates.
The invention has the beneficial effects that: according to the invention, the spin polarization hole tunneling layer is arranged between the upper waveguide layer and the electron blocking layer and/or between the active layer and the upper waveguide layer, and forms current-induced spin transmission moment through interlayer exchange coupling and ladder-shaped hysteresis regression lines, and in the spin polarization hole tunneling layer, the transmission of spin characteristics can be excited by current and continuously exist, so that the spin polarization hole tunneling is enhanced, the efficiency of hole injection into the active layer is improved, and simultaneously, net electric polarization and net magnetization intensity are generated, the polarization direction and intensity are controlled through magnetostriction and an externally-applied electric field, the piezoelectric polarization effect and quantum confinement Stark effect QSE are offset, the hole injection barrier is reduced, the injection uniformity of electron holes of the active layer is improved, so that the stimulated radiation efficiency and peak gain uniformity of a laser element are enhanced, the excitation threshold value of the laser element is reduced, and the mode gain, the optical power and the slope efficiency of the laser element are improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser device with a spin-polarized hole tunneling layer according to an embodiment of the present invention.
In the figure: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an electron blocking layer; 106. an upper confinement layer; 107. spin-polarized hole tunneling layer.
Detailed Description
The following detailed description of the present application is provided in conjunction with the accompanying drawings, and it is to be understood that the following detailed description is merely illustrative of the application and is not to be construed as limiting the scope of the application, since numerous insubstantial modifications and adaptations of the application will be to those skilled in the art in light of the foregoing disclosure.
As shown in fig. 1, a semiconductor laser device with spin-polarized hole tunneling layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, an upper waveguide layer 104 and an electron blocking layer arranged in this order from bottom to topA spin-polarized hole tunneling layer 107 is arranged between 105 and/or between the active layer 103 and the upper waveguide layer 104, and the spin-polarized hole tunneling layer 107 forms a current-induced spin transmission moment through interlayer exchange coupling and ladder-shaped hysteresis regression line, so that spin-polarized hole tunneling can be enhanced, and the efficiency of hole injection into the active layer 103 is improved, wherein the spin-polarized hole tunneling layer 107 is Cr 2 O 3 @LuFeO 3 ，Cr I 3 @LuFe 2 O 4 ，Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 ，CoFe 2 O 4 @SrTiO 3 ，
LaCuMnO 3 @CaRuTiO 3 The thickness of the three-dimensional quantum dot structure of any one or any combination is 0.5-500 nm.
Spin-polarized hole tunneling layer refers to a special structure in a semiconductor material that is used to control the spin of electrons and the transport of charges. In crystals, electrons will be filled in a positive empty state (absence state) called holes, and these electrons have spin characteristics. By introducing a specific layered structure into the semiconductor material, the spin state of the holes can be adjusted and controlled, thereby achieving control of spin polarization.
The spin-polarized hole tunneling layer is typically composed of a plurality of materials, including ferromagnetic materials and semiconductor materials. Transfer and transport of spin polarization can be achieved by forming a very thin interface between the ferromagnetic material and the semiconductor material. This structure can control the direction and intensity of spin polarization by applying an electric or magnetic field.
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, inN, alInN and GaN, the thickness is 1-8 nm, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN and AlInN, and the thickness is 1-12 nm.
Wherein, the lower limiting layer 101 comprises any one or any combination of GaN, al GaN, inGaN, alInGaN, alN, inN and AlInN, and has a thickness of 50-5000 nm.
Wherein, the lower waveguide layer 102 and the upper waveguide layer 104 each comprise any one or any combination of GaN, inGaN and AlInGaN, and have a thickness of 50-1000 nm.
Wherein, the electron blocking layer 105 and the upper confinement layer 106 each comprise any one or any combination of GaN, al I N GaN, al N and Al I N N, and have a thickness of 20-1000 nm.
Wherein the substrate 100 comprises sapphire, silicon, ge, siC, al N, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/Al N composite substrate, sapphire/SiNx, sapphire/SiO 2/SiNx composite substrate, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates
In an alternative embodiment, any combination of spin-polarized hole tunneling layers 107 includes a three-dimensional quantum dot structure of the following binary combination:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 ，Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 ，
Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrTiO 3 ，Cr 2 O 3 @LuFeO 3 /LaCuMnO 3 @CaRuTiO 3 ，
Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 ，Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrT iO 3 ，
Cr I 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 ，Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 ，Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 ，CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuTiO 3 。
in an alternative embodiment, any combination of spin-polarized hole tunneling layers 107 includes a three-dimensional quantum dot structure of the following ternary combination: cr (Cr) 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 ，Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 ，
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 ，
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 ，
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuT iO 3 ，
Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuT iO 3 ，
Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrT iO 3 ，
Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuT iO 3 ，Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuT iO 3 。
In an alternative embodiment, any combination of spin-polarized hole tunneling layers 107 includes a three-dimensional quantum dot structure of the following quaternary combination:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrT iO 3 ，
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuT iO 3 ，
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuT iO 3 ，
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuT iO 3 ，Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRuT iO 3 。
in an alternative embodiment, any combination of spin-polarized hole tunneling layers 107 includes a three-dimensional quantum dot structure of the following five-membered combination:
Cr 2 O 3 @LuFeO 3 /Cr I 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrT iO 3 /LaCuMnO 3 @CaRu T iO 3 。
in order to highlight the technical advantages of the technical scheme, the performance of the laser element provided by the invention is transversely compared with that of the traditional laser element, and the comparison result can be seen in table 1.
TABLE 1
As can be found by comparison, the semiconductor laser element provided by the invention has the advantages that the polarization direction and intensity are controlled by magnetostriction and an externally applied electric field, the piezoelectric polarization effect and quantum confinement Stark effect Qcse are counteracted, the hole injection barrier is reduced, the injection uniformity of electron holes of an active layer is improved, the stimulated radiation efficiency and peak gain uniformity of the laser element are enhanced, the mode gain of the laser element is improved, and the threshold current is increased from 1.16kA/cm 2 Reduced to 0.72kA/cm 2 The slope increased from 0.97W/A to 1.59W/A, and the optical power increased by 75%.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.
Claims (10)
1. The utility model provides a semiconductor laser component with spin polarization hole tunneling layer, includes substrate, lower confinement layer, lower waveguide layer, active layer, last waveguide layer, electron blocking layer, the upper confinement layer that sets gradually from bottom to top, its characterized in that: spin-polarized hole tunneling layers are arranged between the upper waveguide layer and the electron blocking layer and/or between the active layer and the upper waveguide layer, and current-induced spin transmission torque is formed by interlayer exchange coupling and ladder-shaped hysteresis regression lines.
2. A semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: the spin-polarized hole tunneling layer is Cr 2 O 3 @LuFeO 3 、CrI 3 @LuFe 2 O 4 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、CoFe 2 O 4 @SrTiO 3 、LaCuMnO 3 @CaRuTiO 3 Any one or any combination of three-dimensional quantum dot structures.
3. A semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: the active layer is a periodic structure formed by a well layer and a barrier layer, the well layer comprises any one or any combination of InGaN, inN, alInN, gaN, and the barrier layer comprises any one or any combination of GaN, alGaN, alInGaN, alN, alInN.
4. A semiconductor laser device having a spin-polarized hole tunneling layer according to claim 3, wherein: the lower confinement layer comprises any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN;
or/and, the lower waveguide layer and the upper waveguide layer comprise any one or any combination of GaN, inGaN and AlInGaN.
5. A semiconductor laser device having a spin-polarized hole tunneling layer according to claim 4, wherein: the electron blocking layer and the upper confinement layer each comprise any one or any combination of GaN, alGaN, alInGaN, alN, alInN.
6. The semiconductor laser device with spin-polarized hole tunneling layer according to claim 1, wherein any combination of the spin-polarized hole tunneling layers comprises a three-dimensional quantum dot structure of the binary combination of:
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 、Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、
Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrTiO 3 、Cr 2 O 3 @LuFeO 3 /LaCuMnO 3 @CaRuTiO 3 、CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、CrI 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 、CrI 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
7. a semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: any combination of the spin-polarized hole tunneling layers includes a three-dimensional quantum dot structure of the following ternary combination:
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 、
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 、
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /LaCuMnO 3 @CaRuTiO 3 、
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、
Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、
Cr 2 O 3 @LuFeO 3 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、
CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、
CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、
CrI 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
8. a semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: any combination of the spin-polarized hole tunneling layers includes a three-dimensional quantum dot structure of the following quaternary combination:
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 、
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /LaCuMnO 3 @CaRuTiO 3 、Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、Cr 2 O 3 @LuFeO 3 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 、CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRuTiO 3 。
9. a semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: any combination of the spin-polarized hole tunneling layers comprises a three-dimensional quantum dot structure of the following five-membered combination:
Cr 2 O 3 @LuFeO 3 /CrI 3 @LuFe 2 O 4 /Co 4 Nb 2 O 9 @Co 4 Ta 2 O 9 /CoFe 2 O 4 @SrTiO 3 /LaCuMnO 3 @CaRu TiO 3 。
10. a semiconductor laser device having a spin-polarized hole tunneling layer according to claim 1, wherein: the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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