CN117879508A - Bias structure with good linearity for power amplifier - Google Patents
Bias structure with good linearity for power amplifier Download PDFInfo
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- CN117879508A CN117879508A CN202410275267.5A CN202410275267A CN117879508A CN 117879508 A CN117879508 A CN 117879508A CN 202410275267 A CN202410275267 A CN 202410275267A CN 117879508 A CN117879508 A CN 117879508A
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- 238000010586 diagram Methods 0.000 description 6
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
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Abstract
The invention discloses a bias structure with good linearity for a power amplifier, which comprises power amplifying units Cell A and Cell B, wherein ballast resistors R1 and R1 'are respectively arranged between an input matching unit and the power amplifying unit Cell A and between the input matching unit and the power amplifying unit Cell B, and the ballast resistors R1 and R1' are respectively provided with an inductor L1 and a capacitor C1 and an inductor L1 'and a capacitor C1' which are mutually connected in series in parallel; the resistance values of the ballast resistors R1 and R1', the inductance values of the inductor L1 and the inductor L1', and the capacitance values of the capacitor C1 and the capacitor C1' are different; bias circuit V connected with ballast resistors R1 and R1 bias A and V bias The bias voltages of the outputs B are different, so that the bias currents are the same. The invention can effectively improve the third-order intermodulation distortion, thereby optimizing the linear performance of the power amplifier and having better practicability.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to a bias structure with good linearity for a power amplifier.
Background
Third order intermodulation distortion is a phenomenon generated in nonlinear circuits, which is a new frequency component generated by nonlinear interaction of two or more input signals. The generation of such distortion involves nonlinear elements in the circuit, such as transistors, diodes, etc. In a nonlinear circuit, various secondary frequency components are generated when an input signal passes through a nonlinear element, and third-order intermodulation distortion is one of them. This phenomenon occurs because the nonlinear element causes nonlinear distortion of the input signal, thereby generating new frequency components in the output. These new frequency components are the sum, difference or multiple of the original input frequencies, where the third order intermodulation distortion is a component that is three times the frequency apart between the input frequencies.
In the field of wireless communications, third order intermodulation distortion is undesirable because it can lead to signal distortion, interference, and spectral spreading, thereby degrading the performance of the system. Therefore, in designing the critical components of the circuit, especially the power amplifier, measures are needed to reduce or eliminate the third order intermodulation distortion effect so as to ensure the signal quality and the system performance. As shown in fig. 1, in a conventional Power amplifier using a heterojunction bipolar transistor process, a Power amplifying Stage (Power Stage) of a final Stage is usually connected in parallel by two or more Power amplifying units (Power cells) to achieve the purpose of Power synthesis. In the circuit diagram of FIG. 1, two power amplifying units Cell A and Cell B are simplified, and a Resistor R is a Ballast Resistor (Ballast Resistor) for preventing the transistor from generating Thermal Runaway (Thermal Runaway) and then connected to the same bias circuit V bias The bias circuit generally adopts a structure of a current mirror, the topological structure of which is shown in fig. 2, and the current magnitude of the resistor R1 is changed to adjust the current magnitude of the resistor I1, namely the bias current of the radio frequency tube. Since the ballasting resistors R are equal in size, the currents that are shunted to the power amplifying cells Cell a and Cell B are the same. The Base (Base) of each die sees an input signal of approximately the same amplitude and phase, depending on the structural characteristics of the symmetrical circuit. Since the transistor is a nonlinear device, the front stage generates various secondary frequency components while the input signal is amplified with the die, andas with the primary signal, these secondary frequencies will also overlap and amplify and appear at the output, as shown in fig. 3, resulting in distortion of the signal.
Disclosure of Invention
The invention aims to provide a bias structure with good linearity for a power amplifier, which aims to solve the problems and optimize the third-order intermodulation distortion phenomenon of a power amplifier circuit.
The invention is realized mainly by the following technical scheme:
the bias structure with good linearity for the power amplifier comprises power amplifying units Cell A and Cell B, wherein an input matching unit is respectively connected with the power amplifying units Cell A and Cell B, ballast resistors R1 and R1 'are respectively arranged between the input matching unit and the power amplifying unit Cell A and between the input matching unit and the power amplifying unit Cell B, and the ballast resistors R1 and R1' are respectively provided with an inductor L1 and a capacitor C1 and an inductor L1 'and a capacitor C1' which are mutually connected in series in parallel; the resistance values of the ballast resistors R1 and R1', the inductance values of the inductor L1 and the inductor L1', and the capacitance values of the capacitor C1 and the capacitor C1' are different; the ballast resistors R1 and R1' are respectively connected with the bias circuit V bias A and V bias B is connected with and bias circuit V bias A and V bias The bias voltages of the outputs B are different so that the bias currents of the input power amplifying units Cell a and Cell B are the same.
In order to better realize the invention, the power detection circuit is further included, and the power detection circuit is respectively connected with the output ends of the power amplifying units Cell A and Cell B; the output end of the power detection circuit is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively.
In order to better realize the invention, the power detection circuit further comprises a resistor R2, a diode D1, a diode D2 and a capacitor C2 which are sequentially arranged in series from front to back, wherein a resistor R4 and a resistor R5 are respectively arranged in parallel between the diode D2 and the capacitor C2, a resistor R3 is arranged in parallel at the input end of the resistor R2, and the resistor R3, the resistor R5 and the capacitor C2 are respectively grounded; the resistor R4 is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively.
In order to better implement the present invention, further, the feedback circuits connected to the power amplifying units Cell a and Cell B are respectively provided with an inductor L2 and an inductor L3 for throttling the ac signal and increasing the circuit stability under high power.
In order to better realize the invention, further, the output end of the input matching unit is connected with the power amplifying units Cell A and Cell B through a direct current blocker respectively.
In order to better implement the present invention, further, the phase difference of the third-order intermodulation products generated by the power amplifying units Cell a and Cell B is 180 degrees, so as to completely cancel at the output.
The beneficial effects of the invention are as follows:
the invention can make the phase of the third-order intermodulation products generated by different power amplifying units different by selecting different ballast resistors and different serial capacitance inductance values. Ideally, the phase difference of the third-order intermodulation products generated by the power amplifying units Cell a and Cell B can be set to 180 degrees, thereby completely canceling out at the output. The invention can reduce the third-order intermodulation component at the output end, does not influence the size of the main signal, and can effectively improve the third-order intermodulation distortion by the circuit structure, thereby optimizing the linear performance of the power amplifier and having better practicability.
Drawings
FIG. 1 is a circuit diagram of a conventional power amplifier employing a heterojunction bipolar transistor process;
FIG. 2 is a schematic diagram of a topology of a prior art bias circuit;
FIG. 3 is a schematic diagram of the superposition of third order intermodulation products of a circuit in a conventional structure;
FIG. 4 is a circuit diagram of a bias structure with good linearity for a power amplifier of the present invention;
FIG. 5 is a schematic diagram of third order intermodulation optimization of a bias structure with good linearity for a power amplifier according to the present invention;
FIG. 6 is a simulation plot of the phase of fundamental and third order intermodulation products as a function of bias capacitance using the same ballast resistor R and bias inductance L;
FIG. 7 is a simulation plot of the phase of the fundamental and third order intermodulation products as a function of bias inductance using the same ballast resistor R and bias capacitor C;
fig. 8 (a) is a simulation result of an upper sideband of a third-order intermodulation product phase changing with input power under the same bias current by using different bias circuit resistances for the power amplifying units Cell a and Cell B;
fig. 8 (B) is a simulation result of the lower sideband of the power amplifying units Cell a and Cell B with different bias circuit resistances, the third-order intermodulation product phase varying with the input power at the same bias current;
fig. 9 is a simulation curve of IMD3 variation with output power obtained by subtracting the third-order intermodulation products IM3 of the upper and lower sidebands of the bias structure with good linearity for the power amplifier of the present invention from the fundamental wave.
Detailed Description
Example 1:
the bias structure with good linearity for the power amplifier comprises power amplifying units Cell A and Cell B, wherein an input matching unit is respectively connected with the power amplifying units Cell A and Cell B, ballast resistors R1 and R1 'are respectively arranged between the input matching unit and the power amplifying unit Cell A and between the input matching unit and the power amplifying unit Cell B, and the ballast resistors R1 and R1' are respectively connected with an inductor L1 and a capacitor C1 and an inductor L1 'and a capacitor C1' which are mutually connected in series in parallel; the resistance values of the ballast resistors R1 and R1', the inductance values of the inductor L1 and the inductor L1', and the capacitance values of the capacitor C1 and the capacitor C1' are different; the ballast resistors R1 and R1' are respectively connected with the bias circuit V bias A and V bias B is connected with and bias circuit V bias A and V bias The bias voltages of the outputs B are different so that the bias currents of the input power amplifying units Cell a and Cell B are the same.
The invention connects a series circuit of inductance and capacitance in parallel beside the ballast resistor R connected with the power amplifying unit Cell A and the power amplifying unit Cell B,meanwhile, unlike the conventional bias architecture, the resistance values of the ballast resistor R1 and the ballast resistor R1' of the power amplifying unit Cell a and the power amplifying unit Cell B are different, and meanwhile, in the inductor-capacitor series circuit connected in parallel with the power amplifying unit Cell a and the power amplifying unit Cell B, the inductance values of the inductors L1 and L1' and the capacitance values of the capacitors C1 and C1' are different. Since the ballasting resistors R1 and R1' have different resistances, in order to make the RF amplifying tubes in the power amplifying units Cell A and Cell B operate at the same bias current, we need to use the bias circuits of two sets of current mirrors to provide different V bias A and V bias And B voltage so that the bias current inputted is the same.
By adopting the bias circuit structure, the phase of the third-order intermodulation component IM3 generated by different power amplifying units can be different by selecting different ballast resistors and different series capacitance inductance values. As shown in fig. 5, ideally, we want the phase difference of the third order intermodulation products IM3 generated by the power amplifying units Cell a and Cell B to be 180 degrees so as to cancel completely at the output. In practical design, only the proper ballast resistor and capacitor inductor on the bias circuit are selected, so that the third-order intermodulation products generated by different power units generate phase differences, the phase differences are closer to 180 degrees, the third-order intermodulation product cancellation effect is better, and the third-order intermodulation products at the output end can be reduced after the third-order intermodulation products are overlapped.
In fig. 3 and 5, IM3 is the third order intermodulation product, in dBm; unlike the IMD3 concept, IMD3 is the difference between fundamental and third order intermodulation products, in dBc; when the fundamental wave is of a certain size, the smaller the IM3 is, the larger the absolute value of the IMD3 is, and the better the circuit linearity is. Third order intermodulation is an important indicator for measuring nonlinearity of a radio frequency device, and its size is expressed by the ratio of intermodulation product to main output signal, and the unit is dBc. The larger the absolute value of the third-order intermodulation index IMD3, the better when selecting the radio frequency device. The larger the value, the smaller the intermodulation product relative to the main signal, and the smaller the interference impact on the system. Therefore, when designing a circuit, we want the smaller and the better the third-order component (IM 3), so the larger and the better the absolute value of IMD 3. Comparing fig. 3 and fig. 5, the present invention is superior to the phase-identical addition result of the third-order intermodulation products in the conventional structure, and the size of the main signal is not affected, so that the circuit structure can effectively improve the third-order intermodulation distortion, thereby optimizing the linear performance of the power amplifier.
Preferably, the power detection circuit is connected with the output ends of the power amplifying units Cell A and Cell B respectively; the output end of the power detection circuit is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively. Preferably, the power detection circuit comprises a resistor R2, a diode D1, a diode D2 and a capacitor C2 which are sequentially connected in series from front to back, wherein a resistor R4 and a resistor R5 are respectively connected in parallel between the diode D2 and the capacitor C2, a resistor R3 is connected in parallel to the input end of the resistor R2, and the resistor R3, the resistor R5 and the capacitor C2 are respectively grounded; the resistor R4 is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively.
The invention adds a Power detector (Power detector) composed of serial diodes on the combined output of the amplifying unit, the voltage Vdet at the output point of the Power detector will increase linearly with the increase of the output Power, and acts on the input end of the Power amplifying unit through the feedback circuit, wherein the inductances L2 and L3 on the feedback circuit play a role in restricting the alternating current signal, and at the same time play a role in increasing the stability of the circuit under high Power.
When the circuit works in a small signal, the output power is lower, and the output voltage Vdet of the power detection point is determined by the bias circuit, and the voltage of the Vdet does not influence the circuit of the front stage because the diode has the characteristic of unidirectional conduction; when the Vdet voltage is increased to a certain extent, the input voltage V of the power amplifying unit is increased along with the increase of the Vdet, the working level of the radio frequency amplifying tube is no longer controlled by the bias circuit but is controlled by the power detection voltage Vdet, and the slope change of the Vdet along with the power increase can be regulated by regulating the size of the resistor in the power detection circuit. Therefore, the control voltage V of the radio frequency amplifying tube under the large signal is precisely controlled, and the working area of the transistor is changed by properly improving the voltage of the V point, so that the purpose of improving the linearity of the circuit under the large signal is achieved. (in general, the greater the quiescent current of the die, the better the circuit linearity)
As shown in fig. 6 and fig. 7, it can be observed from the simulation results that the phase of the fundamental wave signal is hardly changed with the change of the magnitude of the bias inductance or the capacitance, and the different magnitudes of the bias inductance and the capacitance generate a certain change for the phase of the third-order intermodulation component. As shown in fig. 8 (a) and 8 (B), the third-order intermodulation products of the power amplifying units Cell a and Cell B have a direct phase difference of about 140 degrees. After the three intermodulation products are overlapped, a part of the third-order intermodulation products can be mutually offset, so that the third-order intermodulation products at the output end of the circuit can be reduced, and the linearity of the circuit is optimized. As shown in fig. 9, the larger the absolute value of IMD3, the better the linearity of the circuit, and the greater the improvement in linearity of the circuit of the present invention can be seen at large signal outputs. According to the invention, the phase of the third-order intermodulation component is optimized through the bias circuit, so that the phase difference of the third-order intermodulation components in the parallel combined transistor is 180 degrees, and the third-order intermodulation components are mutually offset at the output position, thereby improving the performance of the third-order intermodulation distortion.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modification, equivalent variation, etc. of the above embodiment according to the technical matter of the present invention fall within the scope of the present invention.
Claims (6)
1. The bias structure with good linearity for the power amplifier is characterized by comprising power amplifying units Cell A and Cell B, wherein an input matching unit is respectively connected with the power amplifying units Cell A and Cell B, ballast resistors R1 and R1 'are respectively arranged between the input matching unit and the power amplifying unit Cell A and between the input matching unit and the power amplifying unit Cell B, and the ballast resistors R1 and R1' are respectively connected in parallel with an inductor L1 and a capacitor C1 which are mutually connected in series, and an inductor L1 'and a capacitor C1'; the resistance values of the ballast resistors R1 and R1', the inductor L1 and the powerThe inductance value of the inductor L1 'and the capacitance values of the capacitor C1 and the capacitor C1' are different; the ballast resistors R1 and R1' are respectively connected with the bias circuit V bias A and V bias B is connected with and bias circuit V bias A and V bias The bias voltages of the outputs B are different so that the bias currents of the input power amplifying units Cell a and Cell B are the same.
2. The bias structure with good linearity for a power amplifier according to claim 1, further comprising a power detection circuit, wherein the power detection circuit is connected with the output ends of the power amplifying units Cell a and Cell B, respectively; the output end of the power detection circuit is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively.
3. The bias structure with good linearity for a power amplifier according to claim 2, wherein the power detection circuit comprises a resistor R2, a diode D1, a diode D2 and a capacitor C2 which are sequentially connected in series from front to back, a resistor R4 and a resistor R5 are respectively connected in parallel between the diode D2 and the capacitor C2, a resistor R3 is connected in parallel to an input end of the resistor R2, and the resistor R3, the resistor R5 and the capacitor C2 are respectively grounded; the resistor R4 is connected with the input ends of the power amplifying units Cell A and Cell B through feedback circuits respectively.
4. A bias structure for a power amplifier with good linearity as claimed in claim 3, wherein the feedback circuits connected to the power amplifying units Cell a and Cell B are respectively provided with an inductance L2 and an inductance L3 for suppressing the ac signal and increasing the circuit stability under high power.
5. The bias structure with good linearity for a power amplifier according to claim 1, wherein the output end of the input matching unit is connected with the power amplifying units Cell a and Cell B through a dc blocker, respectively.
6. A power amplifier bias structure according to any of claims 1-5, wherein the third order intermodulation products generated by the power amplifying units Cell a and Cell B are 180 degrees out of phase so as to cancel completely at the output.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410275267.5A CN117879508A (en) | 2024-03-12 | 2024-03-12 | Bias structure with good linearity for power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410275267.5A CN117879508A (en) | 2024-03-12 | 2024-03-12 | Bias structure with good linearity for power amplifier |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722849A (en) * | 1993-06-30 | 1995-01-24 | Fujitsu Ltd | Linear amplifier |
| US5914641A (en) * | 1996-08-09 | 1999-06-22 | Electronics And Telecommunications Research Institute | Gate voltage control circuit of a power amplifier |
| CN1926759A (en) * | 2004-01-05 | 2007-03-07 | 日本电气株式会社 | Amplifier |
| JP2007215248A (en) * | 2007-05-30 | 2007-08-23 | Sony Corp | Power amplifier and radio communication apparatus using the same |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| KR101793237B1 (en) * | 2016-08-19 | 2017-11-02 | 부산대학교 산학협력단 | Linear HBT based power amplifier using parallel-combined transistors with IMD3 cancellation |
| US20200106404A1 (en) * | 2018-09-28 | 2020-04-02 | Murata Manufacturing Co., Ltd. | Power amplifier |
| CN111740711A (en) * | 2020-07-22 | 2020-10-02 | 广东工业大学 | Class AB radio frequency power amplifier with analog predistortion and temperature compensation |
| CN112543004A (en) * | 2020-12-04 | 2021-03-23 | 广东工业大学 | Linear bias circuit and radio frequency power amplifier |
| CN112953421A (en) * | 2021-03-29 | 2021-06-11 | 广州穗源微电子科技有限公司 | High-linearity AB power amplifier with broadband predistortion and phase compensation |
-
2024
- 2024-03-12 CN CN202410275267.5A patent/CN117879508A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722849A (en) * | 1993-06-30 | 1995-01-24 | Fujitsu Ltd | Linear amplifier |
| US5914641A (en) * | 1996-08-09 | 1999-06-22 | Electronics And Telecommunications Research Institute | Gate voltage control circuit of a power amplifier |
| CN1926759A (en) * | 2004-01-05 | 2007-03-07 | 日本电气株式会社 | Amplifier |
| JP2007215248A (en) * | 2007-05-30 | 2007-08-23 | Sony Corp | Power amplifier and radio communication apparatus using the same |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| KR101793237B1 (en) * | 2016-08-19 | 2017-11-02 | 부산대학교 산학협력단 | Linear HBT based power amplifier using parallel-combined transistors with IMD3 cancellation |
| US20200106404A1 (en) * | 2018-09-28 | 2020-04-02 | Murata Manufacturing Co., Ltd. | Power amplifier |
| CN111740711A (en) * | 2020-07-22 | 2020-10-02 | 广东工业大学 | Class AB radio frequency power amplifier with analog predistortion and temperature compensation |
| CN112543004A (en) * | 2020-12-04 | 2021-03-23 | 广东工业大学 | Linear bias circuit and radio frequency power amplifier |
| CN112953421A (en) * | 2021-03-29 | 2021-06-11 | 广州穗源微电子科技有限公司 | High-linearity AB power amplifier with broadband predistortion and phase compensation |
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