CN117878717B - Femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip - Google Patents
Femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip Download PDFInfo
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- CN117878717B CN117878717B CN202410275170.4A CN202410275170A CN117878717B CN 117878717 B CN117878717 B CN 117878717B CN 202410275170 A CN202410275170 A CN 202410275170A CN 117878717 B CN117878717 B CN 117878717B
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- 238000010168 coupling process Methods 0.000 title description 11
- 238000005859 coupling reaction Methods 0.000 title description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000002096 quantum dot Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- 238000003491 array Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- VJJVVKGSBWRFNP-UHFFFAOYSA-N [O].[Si](=O)=O Chemical compound [O].[Si](=O)=O VJJVVKGSBWRFNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000004927 fusion Effects 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention provides a monolithic integrated light emitting chip coupled with a femtosecond laser direct writing waveguide, which relates to the technical field of optical device integration and comprises the following components: the silicon substrate, the silicon dioxide oxygen-buried layer and the silicon dioxide embedding layer grow sequentially from bottom to top; the silicon waveguide layer is arranged on the silicon dioxide buried oxide layer and is positioned inside the silicon dioxide buried oxide layer; the silicon dioxide embedding layer comprises a first area, a second area and a third area, wherein the first area comprises a quantum dot laser array, the second area comprises a modulator array, the third area comprises an optical waveguide array, the quantum dot laser array, the modulator array and the optical waveguide array are arranged in the same direction, the height of the output end face of the quantum dot laser array is different from the height of the input end face of the modulator array, and each group of quantum dot laser arrays is correspondingly connected with the modulator array through the optical waveguide array. The invention can solve the problems of matching the size of the die spot and space alignment between the quantum dot laser and the modulator, and better realizes photoelectric monolithic integration.
Description
Technical Field
The invention relates to the technical field of optical device integration, in particular to a single-chip integrated light emitting chip coupled with a femtosecond laser direct writing waveguide.
Background
Along with the explosion of internet flow data, the development demands of high-speed information flows such as 5G application, the internet, the Internet of things, artificial intelligence and the like are oriented, the traditional electric interconnection integrated architecture is technically applied to the bottleneck in the aspects of speed, power consumption, integration level and the like, and the limitation of electric moore's law can be broken through by means of the low-power consumption, high-speed and high-integration level advantages of a photon device, so that the development of the photoelectric integration technology becomes a very promising solution.
On a Complementary Metal Oxide Semiconductor (CMOS) compatible process platform, the silicon photonic device has the advantage of high integration level, and can realize monolithic interconnection integration with an electrical device, so that the silicon photonic device becomes a leading edge hot technology in recent years. However, since silicon materials belong to indirect bandgap semiconductors, high-efficiency light sources cannot be formed, and therefore high-power lasers based on III-V materials and the like need to be integrated by epitaxial growth on a silicon photon platform in heterogeneous forms, monolithic integration of light sources and silicon optical devices is achieved, and quantum dot lasers are potential solutions. However, in the prior art, two matching difficulties exist in the optical signal output of the epitaxially grown quantum dot laser and the optical signal input of the modulator, and the first point is that the mode spot sizes of the two are matched, so that low-loss coupling is difficult to realize; the second point is the spatial alignment of the two on the SOI co-substrate, and because the heterogeneous integration of the laser is difficult to adopt the same procedure with the silicon platform modulator, the output optical signal of the active region is difficult to realize accurate pre-butt joint with the optical waveguide layer of the modulator.
Therefore, how to solve the problems of the matching of the size of the mode spot and the spatial alignment between the quantum dot laser and the modulator, and better realize the monolithic integration of the silicon photonic device and the electronic device is a very challenging task.
Disclosure of Invention
In view of the above, the present invention provides a monolithically integrated light emitting chip coupled with a femtosecond laser direct writing waveguide to solve the problems of mode spot size matching and spatial alignment between a quantum dot laser and a modulator.
The invention provides a femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip, which comprises: a silicon substrate; the silicon dioxide oxygen burying layer is arranged on the silicon substrate; the silicon dioxide embedding layer is arranged on the silicon dioxide oxygen embedding layer; the silicon waveguide layer is arranged on the silicon dioxide buried oxide layer and is positioned in the silicon dioxide buried oxide layer; the silicon dioxide buried layer comprises a first area, a second area and a third area, wherein the first area comprises a quantum dot laser array, the second area comprises a modulator array, the third area comprises an optical waveguide array, the quantum dot laser array, the modulator array and the optical waveguide array are arranged in the same direction, the height of the output end face of the quantum dot laser array is different from the height of the input end face of the modulator array, and each group of the quantum dot laser arrays is correspondingly connected with the modulator array through the optical waveguide array.
Optionally, the size of an end face of the optical waveguide array connected with the quantum dot laser is matched with the size of a mode spot of an output end face of the quantum dot laser, and the size of an end face of the optical waveguide array connected with the modulator is matched with the size of a mode spot of an input end face of the modulator.
Optionally, the optical waveguide array is a device formed by a femtosecond laser direct writing technology.
Optionally, each optical waveguide in the array of optical waveguides is a curved waveguide.
Optionally, the modulator array is a mach-zehnder modulator or a micro-ring modulator.
Optionally, the quantum dot laser array is a device formed by epitaxially growing a group III-V material on the silicon substrate or the silicon waveguide layer.
Optionally, a GaAs epitaxial layer is pre-grown between the silicon substrate and the quantum dot laser array.
Optionally, the refractive index of the optical waveguide array is greater than the refractive index of the silica embedding layer.
Optionally, the size of the end face mode spot of each optical waveguide in the optical waveguide array is 2-10 μm.
Optionally, the length of each optical waveguide in the optical waveguide array is 0.1-10 mm.
The above at least one technical scheme adopted in the embodiment of the invention can achieve the following beneficial effects:
1. The invention realizes the monolithic heterogeneous integration of the light source and the modulator based on the SOI platform technology compatible with CMOS, is further popularized to a photoelectric fusion technology platform, can truly realize the fusion integration of the monolithic all-photoelectric device containing the light source, and has commercial application foundation and prospect while realizing high integration level;
2. The optical waveguide generated by the femtosecond laser direct writing technology can realize on-chip coupling of the laser and the modulator, and the path and the size of the optical waveguide can be matched according to the end surface mode spot size of the laser and the modulator, so that high-precision alignment and low-loss coupling between the laser and the modulator are realized;
3. The optical waveguide generated by the femtosecond laser direct writing technology can avoid the problems of fatigue and performance degradation of the optical waveguide generated by the photon lead technology (PWB), and has high reliability.
Drawings
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
Fig. 1 schematically illustrates a schematic diagram of an integrated three-dimensional structure of a femto-second laser direct writing waveguide coupled laser and a mach-zehnder modulator monolithic 8-channel array according to an embodiment of the present invention;
FIG. 2 schematically illustrates a single-channel cross-sectional view of a laser coupled with a femtosecond laser direct-write waveguide and a Mach-Zehnder modulator provided by an embodiment of the present invention;
FIG. 3 schematically illustrates a schematic diagram of an end-face mode of spot-changing of an optical waveguide according to an embodiment of the present invention;
Fig. 4 schematically illustrates a schematic diagram of a monolithic 4-channel array integrated architecture of a femto-second laser direct writing waveguide coupled laser and a micro-ring modulator according to an embodiment of the present invention.
Reference numerals: 1-a silicon substrate; 2-a silicon dioxide embedding layer; 21-a first region; 22-a second region; 23-a third region; a 3-quantum dot laser array; a 4-modulator array; a 41-micro-ring modulator array; 5-an optical waveguide array; 51-a first section of optical waveguide; 52-a second-segment optical waveguide; 53-third segment optical waveguide.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Fig. 1 schematically shows a schematic diagram of an integrated three-dimensional structure of a femto-second laser direct writing waveguide coupled laser and a mach-zehnder modulator monolithic 8-channel array according to an embodiment of the present invention.
As shown in fig. 1, the present invention provides a femtosecond laser direct-write waveguide coupled monolithically integrated light emitting chip, including: a silicon substrate 1; the silicon dioxide oxygen burying layer is arranged on the silicon substrate 1; a silicon dioxide embedding layer 2 arranged on the silicon dioxide oxygen embedding layer; the silicon waveguide layer is arranged on the silicon dioxide buried oxide layer and is positioned inside the silicon dioxide buried oxide layer 2; the silica embedding layer 2 comprises a first area 21, a second area 22 and a third area 23, wherein the first area 21 comprises a quantum dot laser array 3, the second area 22 comprises a modulator array 4, the third area 23 comprises an optical waveguide array 5, the quantum dot laser array 3, the modulator array 4 and the optical waveguide array 5 are arranged in the same direction, the height of the output end face of the quantum dot laser array 3 is different from the height of the input end face of the modulator array 4, and each group of quantum dot laser arrays 3 and the modulator array 4 are correspondingly connected through the optical waveguide array 5.
In an exemplary embodiment, the silicon substrate 1 is an SOI wafer substrate, the silicon substrate 1 having a thickness of 700 μm and a diameter of 100mm.
In an exemplary embodiment, the silicon substrate 1 is a square substrate with a thickness of 700 μm and a side length of 100mm.
The specific dimensions of the silicon substrate 1 are not particularly limited in the present invention, and other dimensions may be set according to actual needs.
In an exemplary embodiment, the buried silicon dioxide layer 2 is deposited on the silicon substrate 1 and the optoelectronic device by a chemical vapor deposition method.
In an exemplary embodiment, the buried silicon dioxide layer 2 is a wafer layer, having a thickness of 5 μm and a diameter of 100mm.
In an exemplary embodiment, the silica embedding layer 2 is square, 5 μm thick and 100mm on a side.
The specific size of the silica embedding layer 2 is not particularly limited in the present invention, and other sizes may be set according to actual needs.
Fig. 2 schematically shows a single-channel cross-sectional schematic diagram of a femtosecond laser direct-write waveguide coupled laser and a mach-zehnder modulator provided by an embodiment of the present invention.
In an exemplary embodiment, as shown in fig. 1 and 2, the quantum dot laser array 3, the mach-zehnder modulator array, and the optical waveguide array 5 are located inside the silica cladding layer 2 and disposed on the silicon substrate 1; the number of array channels of the quantum dot laser array 3 is the same as that of the Mach-Zehnder modulator array, each quantum dot laser in the quantum dot laser array 3 is respectively connected with each Mach-Zehnder modulator in the Mach-Zehnder modulator array in a one-to-one correspondence manner, one quantum dot laser is combined with a corresponding Mach-Zehnder modulator, and each optical waveguide in the optical waveguide array 5 correspondingly connects each group of quantum dot lasers with the Mach-Zehnder modulator. One end of each optical waveguide connected with the quantum dot laser is flush with the end face of the quantum dot laser, one end of each optical waveguide connected with the Mach-Zehnder modulator is flush with the end face of the Mach-Zehnder modulator, the problem of spatial alignment of the quantum dot laser and the Mach-Zehnder modulator is solved, and optical transmission coupling is achieved.
In an exemplary embodiment, the number of array channels of the quantum dot laser array 3 and modulator array 4 is 8 or 4.
The number of array channels of the quantum dot laser array 3 and the modulator array 4 is not particularly limited in the present invention.
In an exemplary embodiment, the modulator array 4 is a Mach-Zehnder electro-optic modulator array comprising a silicon modulator based on the effect of plasma dispersion by SOI silicon waveguide doping or a lithium niobate modulator, barium titanate modulator or lead zirconate titanate modulator based on the effect of electro-optic integrated in a silicon-based material system. The material system of the modulator is not particularly limited by the present invention.
Fig. 3 schematically illustrates a schematic diagram of an end-face mode spot-changing manner of an optical waveguide according to an embodiment of the present invention.
As an alternative embodiment, the size of the end face of the optical waveguide array 5 connected to the quantum dot laser array 3 matches the size of the mode spot of the output end face of the quantum dot laser array 3, and the size of the end face of the optical waveguide array 5 connected to the modulator array 4 matches the size of the mode spot of the input end face of the modulator array 4.
In an exemplary embodiment, as shown in fig. 3, the optical waveguide includes a first segment of optical waveguide 51, a second segment of optical waveguide 52 and a third segment of optical waveguide 53, where the first segment of optical waveguide 51 is connected to the quantum dot laser array 3, and has an inverted cone structure, and an end face size of an end of the first segment of optical waveguide 51 connected to the quantum dot laser array 3 is the same as an end face size of the quantum dot laser array 3, and an end face size of an end of the first segment of optical waveguide 51 not connected to the quantum dot laser array 3 is smaller than an end face size of an end of the first segment of optical waveguide 51 connected to the quantum dot laser array 3. The second optical waveguide 52 is connected to the modulator array 4 and has an inverted cone structure, and the end face spot size of the second optical waveguide 52 connected to the modulator array 4 is the same as the end face spot size of the modulator array 4, and the end face spot size of the second optical waveguide 52 not connected to the modulator array 4 is smaller than the end face spot size of the second optical waveguide 52 connected to the modulator array 4. The first section of optical waveguide 51 is connected with the second section of optical waveguide 52 through the third section of optical waveguide 53, and the third section of optical waveguide 53 realizes the gradual change of the mode spots, so that the optical coupling of the quantum dot laser array 3 and the modulator array 4 is ensured.
As an alternative embodiment, the optical waveguide array 5 is a device formed by a femtosecond laser direct writing technique.
The femtosecond laser direct writing technique is capable of creating an optical waveguide by custom-defining in the hard glass material of the silica embedding layer 2.
The "custom" refers to that, due to the difference of the sizes of the quantum dot laser array 3 and the modulator array 4, the two are difficult to realize spatial alignment on the same horizontal plane, and there is a height drop, so that the femtosecond laser energy and the alignment site can be controlled according to the end face height and the end face size of the quantum dot laser array 3 and the modulator array 4, and an optical waveguide path is generated to realize effective optical transmission coupling.
As an alternative embodiment, the refractive index of the optical waveguide array 5 is greater than the refractive index of the silica embedding layer 2.
In an exemplary embodiment, ultra-fine focusing is performed on the inside of the silica embedding layer 2 by high-energy pulsed femtosecond laser, local high temperature and high pressure are generated, shock waves and material densification are formed, a processing path higher than the refractive index of the silica is formed, and thus a 3D optical waveguide array 5 capable of binding an optical signal mode field is formed, and the end faces of the optical waveguide array 5 are aligned and flush with the end faces of the laser array 3 and the modulator array 4 respectively. The dimensions of the optical waveguide array 5 and the end face mode spot size are adjustable according to the femtosecond laser machining process capability.
As an alternative embodiment, each optical waveguide in the optical waveguide array 5 is a curved waveguide, so as to implement mode-spot grading of the optical signal in the optical waveguide, and thus implement low-loss optical coupling.
As an alternative embodiment, the size of the end face mode spot of each optical waveguide in the optical waveguide array 5 is 2-10 μm.
As an alternative embodiment, the length of each optical waveguide in the optical waveguide array 5 is 0.1-10 mm.
Fig. 4 schematically illustrates a schematic three-dimensional integrated structure of a quantum dot laser array 3 and a micro-ring modulator array 41 monolithic 4-channel array coupled by a femtosecond laser direct-write waveguide according to an embodiment of the present invention.
As an alternative embodiment, as shown in fig. 3 and 4, the modulator array 4 is a mach-zehnder type or micro-ring modulator.
As an alternative embodiment, the quantum dot laser array 3 is a device formed by epitaxially growing a group III-V material on a silicon substrate 1 or silicon waveguide layer.
As an illustrative example, the III-V material is epitaxial grown on the silicon substrate 1 or silicon waveguide layer as InAs/GaAs or InAs/InP.
As an alternative embodiment, gaAs epitaxial layer is pre-grown between the silicon substrate 1 and the quantum dot laser array 3.
In an exemplary embodiment, the GaAs epitaxial layer has a thickness of 100nm.
In an exemplary embodiment, the number of array channels of the optical waveguide array 5 is 4 or 8. The number of arrays of the optical waveguide array 5 is not particularly limited in the present invention.
In summary, the invention can realize heterogeneous integration of the quantum dot laser and the modulator on the CMOS compatible process platform, and realize on-chip low-loss optical signal transmission coupling by using the femtosecond direct-writing optical waveguide technology, and the technology is expanded to a single-chip fusion photoelectric process platform, so that the single-chip photoelectric fusion integration containing a light source can be further realized, and the invention has practical commercial application prospect.
Those skilled in the art will appreciate that the features recited in the various embodiments of the invention can be combined in a variety of combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the present invention. In particular, the features recited in the various embodiments of the invention can be combined and/or combined in various ways without departing from the spirit and teachings of the invention. All such combinations and/or combinations fall within the scope of the invention.
While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. Accordingly, the scope of the present invention should not be limited to the above-described embodiments.
Claims (10)
1. A femtosecond laser direct-write waveguide coupled monolithically integrated light emitting chip comprising:
A silicon substrate (1);
The silicon dioxide oxygen burying layer is arranged on the silicon substrate (1);
a silicon dioxide embedding layer (2) arranged on the silicon dioxide oxygen burying layer;
the silicon waveguide layer is arranged on the silicon dioxide buried oxide layer and is positioned inside the silicon dioxide buried oxide layer (2);
The silicon dioxide buried layer (2) comprises a first area (21), a second area (22) and a third area (23), wherein the first area (21) comprises a quantum dot laser array (3), the second area (22) comprises a modulator array (4), the third area (23) comprises an optical waveguide array (5), the quantum dot laser array (3) and the modulator array (4) are arranged in the same direction with the optical waveguide array (5), the height of an output end face of the quantum dot laser array (3) is different from the height of an input end face of the modulator array (4), and each group of the quantum dot laser arrays (3) and the modulator array (4) are correspondingly connected through the optical waveguide array (5).
2. The femtosecond laser direct write waveguide coupled monolithic integrated light emitting chip according to claim 1, wherein an end face size of the optical waveguide array (5) connected to the quantum dot laser array (3) is matched with a mode spot size of an output end face of the quantum dot laser array (3), and an end face size of the optical waveguide array (5) connected to the modulator array (4) is matched with a mode spot size of an input end face of the modulator array (4).
3. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip of claim 1, wherein the optical waveguide array (5) is a device formed by a femtosecond laser direct write technique.
4. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip of claim 1, wherein each optical waveguide of the array of optical waveguides (5) is a curved waveguide.
5. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip of claim 1, wherein the modulator array (4) is a mach-zehnder type or micro-ring type modulator.
6. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip according to claim 1, wherein the quantum dot laser array (3) is a device formed by epitaxially growing a group III-V material on the silicon substrate (1) or the silicon waveguide layer.
7. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip according to claim 6, wherein a GaAs epitaxial layer is pre-grown between the silicon substrate (1) and the quantum dot laser array (3).
8. The femtosecond laser direct write waveguide coupled monolithically integrated light emitting chip according to claim 1, wherein the refractive index of the optical waveguide array (5) is larger than the refractive index of the silica embedding layer (2).
9. The femtosecond laser direct write waveguide coupled monolithic integrated light emitting chip according to claim 1, wherein the size of each optical waveguide end face spot in the optical waveguide array (5) is 2-10 μm.
10. The femtosecond laser direct write waveguide coupled monolithic integrated light emitting chip according to claim 1, wherein the length of each optical waveguide in the optical waveguide array (5) is 0.1-10 mm.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104797963A (en) * | 2012-12-20 | 2015-07-22 | 英特尔公司 | Optical photonic circuit coupling |
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| US9529154B2 (en) * | 2014-03-21 | 2016-12-27 | Imec Vzw | Method for optical coupling between a photonic integrated circuit and an external optical element |
| US9917418B2 (en) * | 2016-01-06 | 2018-03-13 | Northwestern University | Monolithical widely tunable quantum cascade laser devices |
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| CN104813204A (en) * | 2013-11-13 | 2015-07-29 | 华为技术有限公司 | Waveguide structures, waveguide coupling structures, and manufacturing methods |
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