CN106887790A - Multi-wavelength silicon substrate hybrid integrated slot laser arrays and preparation method thereof - Google Patents
Multi-wavelength silicon substrate hybrid integrated slot laser arrays and preparation method thereof Download PDFInfo
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- CN106887790A CN106887790A CN201710243196.0A CN201710243196A CN106887790A CN 106887790 A CN106887790 A CN 106887790A CN 201710243196 A CN201710243196 A CN 201710243196A CN 106887790 A CN106887790 A CN 106887790A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
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Abstract
A kind of multi-wavelength silicon substrate hybrid integrated slot laser arrays and preparation method thereof, multi-wavelength silicon substrate hybrid integrated slot laser arrays include silica-based waveguides structure and the multiple die semiconductor gain laser array being bonded in the silica-based waveguides structure, wherein, the silica-based waveguides structure includes silicon-based substrate and the n Luciola substriata passages being arranged in the silicon-based substrate, each waveguide channels include silicon waveguides sections, taper parts and the slot parts that order is set, the width of the slot parts of each waveguide channels is different, wherein n >=2, n is positive integer.
Description
Technical field
The invention belongs to optoelectronic areas, more particularly to based on multi-wavelength silicon substrate hybrid integrated slot laser arrays and its
Preparation method.
Background technology
In silicon based photon, silicon-based photonics integration chip and iii v compound semiconductor with InP-base as representative
The composition of photon integrated chip is substantially consistent, and simple division includes light source, modulator, detector, passive optical waveguide, coupling
Device etc., for silicon materials wherein most it is insoluble be exactly silicon substrate light source problem.
The content of the invention
In view of above-mentioned technical problem, in order to overcome the above-mentioned deficiencies of the prior art, the present invention proposes a kind of multi-wavelength silicon
Base hybrid integrated slot laser arrays and preparation method thereof.
According to an aspect of the present invention, there is provided a kind of multi-wavelength silicon substrate hybrid integrated slot laser arrays, including silicon
Fundamental wave guide structure and the multiple die semiconductor gain laser array being bonded in the silica-based waveguides structure, wherein, the silicon substrate
Waveguiding structure includes silicon-based substrate and the n Luciola substriata passages being arranged in the silicon-based substrate, and each waveguide channels include suitable
Silicon waveguides sections, taper parts and slot parts that sequence is set, the width of the slot parts of each waveguide channels is not
Together, wherein n >=2, n is positive integer.
According to another aspect of the present invention, there is provided a kind of preparation side of multi-wavelength silicon substrate hybrid integrated slot laser arrays
Method, including：Silica-based waveguides structure and multiple die semiconductor gain laser array are prepared, and by multiple die semiconductor gain laser
Array is bonded in the silica-based waveguides structure, wherein the silica-based waveguides structure includes silicon-based substrate and is arranged on the silicon
N Luciola substriata passages on base substrate, each waveguide channels include silicon waveguides sections, taper parts and the slot that order is set
Part, the thickness of the slot parts of each waveguide channels is different, wherein n >=2, and n is positive integer.
From above-mentioned technical proposal as can be seen that one of the present invention at least has the advantages that：
(1) using slot structures as modeling structure, its preparation process is simple uses the light compatible with standard CMOS process
Lithography can just be reached, and its technique is flexible；
(2) multi-wavelength laser array is just realized by changing the width of slot on waveguide channels；
(3) using the electrology characteristic that metal bonding bonding thermal conductivity is high, good, and coupling efficiency is improved.
Brief description of the drawings
Fig. 1 is the structural representation of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention；
Fig. 2 is the structural representation of silica-based waveguides structure in Fig. 1；
Fig. 3 is the structural representation of the buried ridge waveguide laser monomer of multiple die semiconductor gain laser array in Fig. 1；
Fig. 4 is the static test figure of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention；
Fig. 5 is the spectrogram of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention.
Specific embodiment
Certain embodiments of the invention will be done with reference to appended accompanying drawing in rear and more comprehensively describe to property, some of them but not complete
The embodiment in portion will be illustrated.In fact, various embodiments of the present invention can be realized in many different forms, and should not be construed
To be limited to this several illustrated embodiment；Relatively, there is provided these embodiments cause that the present invention meets applicable legal requirement.
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Fig. 1 is the structural representation of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention, such as
Shown in Fig. 1, multi-wavelength silicon substrate hybrid integrated slot laser arrays 100 include：Silica-based waveguides structure 10 and it is bonded in described
Multiple die semiconductor gain laser array 20 in silica-based waveguides structure 10.
Fig. 2 is the structural representation of silica-based waveguides structure in Fig. 1, and Fig. 2 illustrate only a part for silica-based waveguides structure, scheme
Silica-based waveguides structure in 1 includes the part shown in multiple Fig. 2 be arrangeding in parallel, as shown in Fig. 2 combinations Fig. 1, in the present embodiment,
Silica-based waveguides structure 10 includes three layers of silicon based SOI substrate waveguide structure, and the structure includes stacking gradually silicon-based substrate 11, silica
Layer 12 and top silicon layer 13, the top silicon layer 13 include n bars waveguide channels arranged in parallel, and wherein waveguide channels are along X side
To be arrangeding in parallel, each waveguide channels include silicon waveguides sections 131, taper parts 132 and the slot parts that order is set
133, wherein, the width of the width less than silicon waveguides sections 131 of slot parts 133, Taper parts connect silicon waveguides sections 131
And slot parts 133, its width is gradually transitions the width of slot parts 133 by the width of silicon waveguides sections 131.N Luciola substriatas
The silicon waveguides sections 131 of passage are identical, and with identical length and width, the slot parts 133 of n Luciola substriata passages are respectively provided with phase
With length and gap periods, but the width of the slot parts 133 of n Luciola substriata passages is different.Per the silicon ripple of Luciola substriata passage
Lead the both sides of part 131 and one bonding metal layer 14 is respectively set, for being bonded with multiple die semiconductor gain laser array 20.
Multiple die semiconductor gain laser array 20 includes that the buried ridge waveguide arranged in array chip of n interconnection swashs
Light device monomer, in the present embodiment, multiple die semiconductor gain laser array 20 is the buried ridge waveguide of P type substrate epitaxial growth
InGaAsP laser arrays, the cycle of the n buried ridge waveguide laser monomer arranged in array chip of interconnection is 240
Micron, Fig. 3 is the structural representation of the buried ridge waveguide laser monomer of multiple die semiconductor gain laser array 20 in Fig. 1,
As shown in figure 3, buried ridge waveguide laser monomer is buried ridge waveguide InGaAsP lasers, it includes P type substrate 21 and thereon
Buffer layers 22, particle implantation area 23 is arranged on Buffer layers 22, and is formed in the centre position of particle implantation area 23
Groove, bottom portion of groove is Buffer layers 22, and lower limit layer 24, active area 25 and upper limiting layer 26 are disposed with groove,
Groove top and neighboring area are provided with ducting layer 27, and the region that particle implantation area 23 is not covered by ducting layer 27 sets aerobic
SiClx layer 28, is provided with the N faces metal electrode with window 29, the window correspondence groove on silicon oxide layer 28 and ducting layer 27
Set, the bottom surface of P type substrate 21 is provided with P faces metal electrode.
With reference to accompanying drawing 1-3, in the present embodiment, the metal bonding of multiple die semiconductor gain laser array 20 to silica-based waveguides knot
On structure 10, multiple die semiconductor gain laser array 20 is inverted, window one ripple of correspondence of each buried ridge waveguide laser monomer
Pathway, the N faces metal electrode of the window both sides of each buried ridge waveguide laser monomer is bonded to the silicon ripple of a waveguide channels
Lead the bonding metal layer 14 of the both sides of part 131.
The operation principle of the multi-wavelength silicon substrate hybrid integrated slot laser arrays in the present embodiment is：Multiple die semiconductor increases
Beneficial laser array 20 provides multi-mode laser, and each buried ridge waveguide laser monomer launches identical multi-mode laser, each
The single-mode laser of buried ridge waveguide laser Monomer emission is coupled respectively in corresponding waveguide channels, and waveguide channels pass through slot
Part carries out modeling to multi-mode laser, only reflects a single-mode laser by the outgoing of silicon waveguides sections 131, and the width of slot parts is determined
The wavelength of reflection single-mode laser.
Fig. 4 is the static test figure of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention.Such as
Shown in (a) in Fig. 4, a kind of typical threshold of multi-wavelength silicon substrate hybrid integrated slot laser array structures of the embodiment of the present invention
Electric current is 12mA, and peak power output is 700 microwatts, and shown in (b) in such as Fig. 4, side mode suppression ratio is about 20dB.
Fig. 5 is the spectrogram of the multi-wavelength silicon substrate hybrid integrated slot laser arrays of one embodiment of the invention.Such as Fig. 5 institutes
Show, by taking n=4 as an example, a kind of four ripples of wave band of multi-wavelength silicon substrate hybrid integrated slot laser array structures of the present embodiment
It is long to be respectively 1538.6nm, 1540.5nm, 1544.9nm and 1550.0nm.
Another embodiment of the present invention provides a kind of multi-wavelength silicon substrate hybrid integrated slot laser array preparation methods, specifically
Including preparing silica-based waveguides structure and multiple die semiconductor gain laser array, and by multiple die semiconductor gain laser array
It is bonded in the silica-based waveguides structure.
Prepare silica-based waveguides structure 10 and specifically include following steps：
Stack gradually silicon-based substrate 11, silicon oxide layer 12 and top silicon layer 13 and form three layers of silicon based SOI substrat structure；
First composition is carried out to top silicon layer 13, part top silicon layer is removed in the Y-direction vertical with X-direction, form slot
Region, the first composition is completed using photoetching and ICP etching technics；
Top silicon layer to forming Slot regions carries out second composition, forms n Luciola substriata passages, and each waveguide channels include
Silicon waveguides sections 131, taper parts 132 and slot parts 133 that order is set, the slot parts of each waveguide channels
Width it is different, wherein n >=2, n is positive integer, and second composition is etched using photoetching process and ICP.
In the silicon of each waveguide channels bonding gold is formed in the silicon waveguides sections both sides deposited metal layer of each waveguide channels
Category layer 14, specifically, by lithographic definition metal deposit area, only non-metal deposition area retains photoresist；Whole face deposited metal layer；
Photoresist and metal level thereon are removed, only retaining metal level in the silicon waveguides sections both sides of each waveguide channels forms bonding gold
Category layer.
By thinning technique, the silicon-based substrate 11 of silica-based waveguides structure 10 is thinned to total and is about 100 microns of thickness,
Just can be by the cleavage of silica-based waveguides structure 10 for small pieces silica-based waveguides structure is stand-by by scribing under this thickness.
Multiple die semiconductor gain laser array is bonded in the silica-based waveguides structure and is specifically included：
The P faces metal electrode of multiple die semiconductor gain laser array 20 is placed upwards, by the vacuum cups of bonder
Lifted after falling absorption with touch down working methods, the top silicon layer 13 of the silica-based waveguides structure 10 that will be made is put upwards
Put, by each buried ridge waveguide laser monomer of multiple die semiconductor gain laser array 20 in bonder is to Barebone
One waveguide channels of the center aligned silica-based waveguides structure 10 of the window 29 of N faces metal electrode, adjust bonding parameter, implement key
Close, multi-wavelength silicon substrate hybrid integrated slot laser arrays are obtained after natural cooling is lowered the temperature.
It will be appreciated by persons skilled in the art that in other implementations, each waveguide channels can not be and be arranged in parallel, example
Radioactive ray group such as each waveguide channels composition with any as origin.
It should be noted that in accompanying drawing or specification text, the implementation for not illustrating or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.Additionally, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various concrete structures, shape or the mode mentioned in embodiment.
Also, it should be noted that the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in protection of the invention
Within the scope of.
It should be noted that in accompanying drawing or specification text, the implementation for not illustrating or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.Additionally, the above-mentioned definition to each element and method is simultaneously
Various concrete structures, shape or the mode mentioned in embodiment are not limited only to, those of ordinary skill in the art can carry out letter to it
Singly change or replace.
Claims (10)
1. a kind of multi-wavelength silicon substrate hybrid integrated slot laser arrays, including silica-based waveguides structure and the silicon substrate ripple is bonded in
Multiple die semiconductor gain laser array on guide structure, wherein,
The silica-based waveguides structure includes silicon-based substrate and the n Luciola substriata passages being arranged in the silicon-based substrate, Mei Yibo
Pathway includes silicon waveguides sections, taper parts and the slot parts that order is set, the slot parts of each waveguide channels
Width it is different, wherein n >=2, n is positive integer.
2. multi-wavelength silicon substrate hybrid integrated slot laser arrays according to claim 1, wherein, in the silicon-based substrate
Silicon dioxide layer is provided with, the n Luciola substriatas passage is arranged in the silicon dioxide layer.
3. multi-wavelength silicon substrate hybrid integrated slot laser arrays according to claim 1, wherein, the n Luciola substriatas lead to
Road be arranged in parallel, bonding metal layer is provided with per Luciola substriata passage both sides, for being bonded the multiple die semiconductor gain laser
Device array.
4. multi-wavelength silicon substrate hybrid integrated slot laser arrays according to claim 3, wherein described multimode is partly led
Body gain laser array includes the n buried ridge waveguide laser monomer being connected with each other, with a pair of the n Luciola substriatas passage 1
Should.
5. multi-wavelength silicon substrate hybrid integrated slot laser arrays according to claim 4, wherein the buried ridge waveguide
Laser monomer includes buried ridge waveguide InGaAsP lasers.
6. a kind of preparation method of multi-wavelength silicon substrate hybrid integrated slot laser arrays, wherein, including：
Silica-based waveguides structure and multiple die semiconductor gain laser array are prepared, and
Multiple die semiconductor gain laser array is bonded in the silica-based waveguides structure,
Wherein described silica-based waveguides structure includes silicon-based substrate and the n Luciola substriata passages being arranged in the silicon-based substrate, often
One waveguide channels include silicon waveguides sections, taper parts and the slot parts that order is set, the slot of each waveguide channels
Partial thickness is different, wherein n >=2, and n is positive integer.
7. preparation method according to claim 6, wherein, preparing silica-based waveguides structure includes：
First time composition is carried out to the top silicon layer in silicon-based substrate, slot regions are formed；
Top silicon layer to forming slot regions carries out second composition, forms n Luciola substriata passages, and each waveguide channels include order
The silicon waveguides sections of setting, taper parts and slot parts, the width of the slot parts of each waveguide channels are different,
Wherein n >=2, n is positive integer；And
It is used to be bonded in the silicon waveguides sections both sides deposited metal layer of each waveguide channels.
8. preparation method according to claim 7, wherein, the first time composition and second technique using photoetching and
ICP is etched.
9. preparation method according to claim 7, wherein, each waveguide channels silicon each waveguide channels silicon ripple
Leading part both sides deposited metal layer includes：
By lithographic definition metal deposit area, only non-metal deposition area retains photoresist；
Whole face deposited metal layer；And
Photoresist and metal level thereon are removed, only retains metal level in the silicon waveguides sections both sides of each waveguide channels.
10. preparation method according to claim 6, wherein, multiple die semiconductor gain laser array n is mutually interconnected
The buried ridge waveguide laser monomer for connecing, each buried ridge waveguide laser monomer includes window area, and multiple die semiconductor is increased
Beneficial laser array is bonded in the silica-based waveguides structure includes the buried ridge waveguide laser monomer for being connected with each other n
Window area center respectively for and be aligned n Luciola substriatas passage bonding.
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| CN201710243196.0A CN106887790A (en) | 2017-04-13 | 2017-04-13 | Multi-wavelength silicon substrate hybrid integrated slot laser arrays and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117878717A (en) * | 2024-03-12 | 2024-04-12 | 中国科学院半导体研究所 | Femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117878717A (en) * | 2024-03-12 | 2024-04-12 | 中国科学院半导体研究所 | Femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip |
| CN117878717B (en) * | 2024-03-12 | 2024-05-14 | 中国科学院半导体研究所 | Femtosecond laser direct-writing waveguide coupling monolithic integrated light emitting chip |
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