CN117872677A - Preparation method of metal mesh electromagnetic shielding film with random structure - Google Patents
Preparation method of metal mesh electromagnetic shielding film with random structure Download PDFInfo
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- CN117872677A CN117872677A CN202410275870.3A CN202410275870A CN117872677A CN 117872677 A CN117872677 A CN 117872677A CN 202410275870 A CN202410275870 A CN 202410275870A CN 117872677 A CN117872677 A CN 117872677A
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Abstract
The invention provides a preparation method of a metal mesh electromagnetic shielding film with a random structure, which comprises the following steps: s1, cleaning the surface of a substrate; s2, sequentially forming a negative photoresist layer and a positive photoresist layer on the surface of the substrate; s3, exposing and developing the metal grid pattern with the random structure by using a vacuum contact type mask exposure technology, so that a first development window with an inverted trapezoid longitudinal section and a second development window with a rectangular longitudinal section, which are communicated up and down, are respectively formed on the positive photoresist layer and the negative photoresist layer, the width of the second development window is larger than that of the bottom surface of the first development window, and the longitudinal sections of the first development window and the second development window are inverted T-shaped; s4, plating a metal film on the surface of the developed substrate, and stripping to obtain the metal grid electromagnetic shielding film with the random structure. The preparation method can prepare the metal grid with the random structure and the line width of 2 mu m on a large-area plane substrate with any shape, and has high preparation precision.
Description
Technical Field
The invention relates to the technical field of optical films and micro-nano optical processing, in particular to a preparation method of a random structure metal grid electromagnetic shielding film.
Background
The optical window is an important component of various photoelectric devices, and has important application in the fields of remote sensing, monitoring, medical treatment, aerospace and military. With the continuous progress of modern communication technology, the communication frequency range is widened, and the space electromagnetic wave environment is deteriorated. Most of optical materials in the current market have good permeability to electromagnetic waves, and in order to reduce or eliminate the influence of disordered electromagnetic waves in space on photoelectric equipment, a method for preparing a layer of metal mesh grid film on the surface of an optical window is generally adopted at present to realize an electromagnetic shielding function. The traditional metal grid structure is a periodic pattern formed by array of regular patterns, and after light beams enter the grid, high-order diffraction light is concentrated and distributed, so that strong stray light interference is formed on an imaging surface, and visual observation and target identification are seriously affected. In recent years, research institutions at home and abroad have conducted research work on diffraction of homogenized metal grids, and a main approach adopted is to randomize regular periodic metal grid patterns, transform the regular periodic metal grid patterns into structures such as random polygons or random circles which are nested and overlapped with each other, and the like, so that secondary diffraction concentrated distribution can be suppressed to a great extent.
Compared with a fixed structure of a periodic regular metal grid, the metal grid with a random structure has different mesh sizes and shapes, and if the machining precision of the metal grid is insufficient, blind holes can appear in the areas when the metal grid meets long and narrow meshes or meshes with too small area, so that the comprehensive photoelectric performance of the metal grid is affected.
At present, the general metal grid preparation process is a positive photoresist photoetching and stripping process, the positive photoresist is characterized in that an exposure area is soluble in a developing solution, and a developing window on a photoresist interface after development is of an inverted trapezoid structure, so that the cross section of a metal grid after being subjected to a photoetching process and grid coating in the metal grid preparation process is shown as a figure 1, as can be seen from the figure 1, grid lines plated on a substrate are completely connected with an inverted trapezoid slope of a photoresist mask, which needs to be stripped, after the metal film on the photoresist mask is developed through positive photoresist exposure, in the subsequent stripping process, the metal film on the photoresist can tear the grid lines on the substrate in the falling process, and the film layer of the grid lines is possibly caused to fall off in partial area, so that saw-tooth defects or complete line breakage appear at the edges of the lines, and the situation is more serious as shown as the figure 2 shows, the metal grid line width is finer.
Therefore, how to prepare a random structure metal grid film with large area and high processing precision on the surface of an optical element substrate is a technical problem to be researched at present.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides a preparation method of a metal mesh electromagnetic shielding film with a random structure, which can conveniently prepare the metal mesh electromagnetic shielding film with a high-precision random structure on a large-size substrate, wherein the minimum line width of the mesh can reach 2 mu m, and the processing efficiency is high.
The technical scheme for solving the technical problems is as follows:
a preparation method of a metal mesh electromagnetic shielding film with a random structure comprises the following steps:
s1, cleaning the surface of a substrate;
s2, sequentially forming a negative photoresist layer and a positive photoresist layer on the surface of the substrate;
s3, exposing and developing a metal grid pattern with a random structure by using a vacuum contact type mask exposure technology, controlling development time, and enabling a first development window and a second development window which are communicated up and down to be formed on the positive photoresist layer and the negative photoresist layer respectively, wherein the longitudinal section of the first development window is in an inverted trapezoid shape, the longitudinal section of the second development window is in a rectangle shape, and the width of the second development window is larger than the width of the bottom surface of the first development window, so that the longitudinal sections of the first development window and the second development window are in an inverted T shape;
s4, plating a metal film on the surface of the developed substrate, and stripping and drying to obtain the metal grid electromagnetic shielding film with the random structure.
According to the scheme, the thickness of the negative photoresist layer is 0.5-0.8 mu m, and the thickness of the positive photoresist layer is 1.5-3 mu m.
According to the scheme, the difference between the width of the second developing window and the width of the first developing window is 0.4-1 times of the thickness of the positive photoresist layer.
According to the above scheme, step S2 specifically includes: and sequentially spraying a layer of negative photoresist and a layer of positive photoresist on the surface of the substrate, and carrying out reflow planarization and pre-heating baking treatment after each layer of photoresist is sprayed.
According to the scheme, the sprayed negative photoresist solution and positive photoresist solution are both photoresists diluted and modified by organic solvents, and the organic solvents are one or more of acetone, NMP and gamma-butyrolactone.
According to the scheme, the negative photoresist solution consists of negative photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2, wherein the positive photoresist solution is prepared from positive photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2.
According to the scheme, the heating temperature in the photoresist spraying process is 50-70 ℃.
According to the scheme, in the step S3, the vacuum degree is-2 KPa to-10 KPa.
According to the scheme, the metal film comprises a transition metal film layer and a main metal film layer.
According to the scheme, the transition metal film layer material is chromium or titanium, the film layer thickness is 10-20 nm, the main metal film layer material is any one of copper, gold, aluminum and nickel, and the film layer thickness is 300-800 nm.
The beneficial effects of the invention are as follows: the longitudinal sections of the first developing window and the second developing window formed by double-layer photoresist spraying are of inverted T-shaped structures, after metal films are plated, the metal films on the substrate cannot be connected with the metal films on the photoresist mask, redundant metal films can be easily removed through soaking of organic solvents in the stripping process, adverse effects on metal grid lines cannot be caused, the metal grid with a random structure with the line width of 2 mu m can be prepared on a large-area plane substrate with any shape, the preparation precision is high, the cost is low, the production efficiency is high, the product consistency is good, and the metal grid has wide application prospects in the directions of optical imaging windows, touch screen conductive film layers and transparent electric heating functional films of civil and military photoelectric equipment.
Drawings
FIG. 1 is a schematic cross-sectional view of a metal grid in the prior art after a positive photoresist lithography process and a grid coating film are performed in the preparation process of the metal grid;
FIG. 2 is a schematic diagram of a prior art metal grid line broken after a positive photoresist photoetching process and grid coating stripping;
FIG. 3 is a flow chart of the preparation of the random structure metal mesh electromagnetic shielding film of the invention;
FIG. 4 is a schematic diagram of the structure of the invention after spraying a negative photoresist layer and a positive photoresist layer on a substrate;
FIG. 5 is a schematic view of the cross-sectional profile of a substrate with a bilayer photoresist layer formed thereon after exposure and development in accordance with the present invention;
FIG. 6 is a schematic illustration of a post-exposure development process for a substrate with a bilayer photoresist layer formed thereon in accordance with the present invention;
FIG. 7 is a schematic view of a substrate with a bilayer photoresist layer formed thereon after exposure, development and plating of a metal film;
fig. 8 is a schematic structural view of a metal mesh electromagnetic shielding film prepared by the invention.
In the drawings, the list of components represented by the various numbers is as follows:
1. 2 parts of a substrate, 2 parts of a negative photoresist layer, 3 parts of a positive photoresist layer, 4 parts of a metal film, 5 parts of a first development window, 6 parts of a second development window.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings and specific embodiments, the examples being provided for illustration only and not for the purpose of limiting the invention.
In order to solve the problem of incomplete grid lines caused by stripping in the process of preparing a metal grid by a positive photoresist photoetching and stripping process, the inventor adopts a double-layer photoresist, a vacuum mask exposure process and a stripping technology, and can prepare a metal grid with a random structure and a line width of 2 mu m on a large-area plane substrate with any shape, the specific preparation method is as follows, and the process flow is shown in figure 3:
s1, cleaning the surface of a substrate 1;
s2, sequentially forming a negative photoresist layer 2 and a positive photoresist layer 3 on the surface of the substrate 1, namely forming a double-layer photoresist layer on the substrate 1, wherein the structure schematic diagram is shown in FIG. 4;
s3, exposing and developing a metal grid pattern with a random structure by using a vacuum contact type mask exposure technology, controlling development time to enable a first development window 5 and a second development window 6 which are communicated up and down to be formed on the positive photoresist layer 3 and the negative photoresist layer 2 respectively, wherein the longitudinal section of the first development window is in an inverted trapezoid shape, the longitudinal section of the second development window is in a rectangle shape, the width of the second development window 6 is larger than the width of the bottom surface of the first development window 5, the longitudinal sections of the first development window 5 and the second development window 6 are in an inverted T-shaped structure, and a profile schematic diagram after development is shown in FIG. 5;
s4, plating a metal film 4 on the surface of the developed substrate 1, wherein the structural schematic diagram is shown in FIG. 7, stripping, cleaning and drying to obtain the random-structure metal grid electromagnetic shielding film, and the structural schematic diagram is shown in FIG. 8.
The substrate with the negative photoresist layer 2 and the positive photoresist layer 3 formed on the surfaces is subjected to vacuum mask exposure and then is developed, the process schematic diagram is shown in fig. 6, and the exposure area of the positive photoresist layer 3 is dissolved in a developing solution, and as the negative photoresist layer 2 is not subjected to baking treatment after ultraviolet exposure and is developed, the negative photoresist layer 2 in the exposure area is not subjected to cross-linking reaction, the dissolution property in the developing solution is not changed and can still be dissolved in the developing solution, and meanwhile, in the process of dissolving the exposure area of the negative photoresist layer 2, the developing solution can also carry out undercutting on the side wall of the unexposed negative photoresist layer 2, so that the longitudinal sections of the first developing window 5 and the second developing window 6 are of inverted T-shaped structures.
The schematic structure of the plated metal film is shown in fig. 7, and the trapezoid slope of the positive photoresist layer 3 is broken by the negative photoresist layer 2, so that the metal film 4 on the substrate 1 is not connected with the metal film 4 on the photoresist mask, and the redundant metal film 4 can be easily removed by soaking in an organic solvent in the stripping process, so that adverse effects on the metal grid lines are avoided, and the preparation precision of the metal grid is obviously improved.
The method can be used for preparing the metal grid with the random structure and the line width of 2 mu m on a large-area plane substrate with any shape, and the prepared metal grid has flat lines, no saw-tooth defect or fracture and high preparation accuracy.
In some preferred embodiments, the cleaning method of the substrate 1 is specifically: (1) soaking the substrate in trichloroethylene for 10min, and then carrying out ultrasonic treatment for 5min; (2) soaking the substrate in acetone for 10min, and then performing ultrasonic treatment for 5min; (3) soaking the substrate in 2-acetone for 10min, and then performing ultrasonic treatment for 5min; (4) placing the substrate into 2-acetone for rinsing for 3min; (5) taking the substrate out of the 2-acetone, and drying by using dry N2 gas; (6) and (3) putting the substrate into a clean oven for baking and drying, wherein the baking temperature is 120 ℃ and the baking time is 30min.
In some preferred embodiments, the negative photoresist layer 2 has a thickness of 0.5 μm to 0.8 μm and the positive photoresist layer 3 has a thickness of 1.5 μm to 3 μm.
Preferably, step S2 specifically includes: and spraying a layer of negative photoresist and a layer of positive photoresist on the surface of the substrate 1 in sequence, and carrying out reflow planarization and pre-heating baking treatment after each layer of photoresist is sprayed.
Preferably, the sprayed negative photoresist solution and positive photoresist solution are both photoresists diluted and modified by organic solvents, and the organic solvents are one or more of acetone, NMP and gamma-butyrolactone.
Preferably, the negative photoresist solution is composed of a negative photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2, wherein the positive photoresist solution is prepared from positive photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2.
Preferably, each layer of photoresist is heated and baked at a low temperature of 50-70 ℃ in the spraying process, and then is placed into a vacuum box for reflow planarization treatment after the spraying is completed, wherein the vacuum degree of the vacuum box is-30 KPa to-60 KPa, the vacuum box is connected with a liquid medicine bottle filled with an organic solvent through a hose, the organic solvent freely evaporates into the vacuum box through a pipeline in a vacuum environment to fumigate the photoresist layer, the organic solvent is acetone or NMP, the fumigating time is 3-10 min, the fluidity of the photoresist layer is increased after the organic solvent is dissolved in the photoresist layer, the dissolving, reflow and solidification process of the surface of the photoresist is carried out, and the flatness of the photoresist layer is improved.
Preferably, after each layer of photoresist is sprayed and reflowed and planarized, the substrate is put into an oven for pre-baking treatment, the organic solvent in the photoresist layer is removed, the baking temperature is 90-105 ℃, and the baking time is 10-30 min.
Preferably, in step S3, the substrate 1 after the pre-baking is put into a vacuum exposure fixture to perform mask exposure, the interior of the mask fixture is vacuumized, and the substrate is tightly contacted with the mask plate through the pressure difference between the interior and the exterior of the fixture, wherein the vacuum degree is-2 KPa to-10 KPa. After development, deionized water is sprayed by using an atomizing nozzle to clean the developed substrate 1, heated high-purity nitrogen is used for drying the substrate, and the substrate is put into an oven for post-drying. Preferably, the temperature of the nitrogen is 60-70 ℃, the post-baking temperature is 90-110 ℃, and the baking time is 2 min-15 min.
In some preferred embodiments, the difference between the width of the second developing window 6 and the width of the first developing window 5 is 0.4 to 1 times the thickness of the positive photoresist layer 3, and the difference in width can ensure that the positive photoresist layer 3 around the upper first developing window 5 is not broken.
Preferably, in step S4, the vacuum degree is excellentAt 10 -4 Plating a metal film 4 on the surface of a developed substrate by adopting a vacuum coating technology of Physical Vapor Deposition (PVD) in an Pa (physical vapor deposition) environment, wherein the metal film 4 comprises a transition metal film layer and a main metal film layer, preferably, the transition metal film layer is made of chromium or titanium, the thickness of the film layer is 10 nm-20 nm, the main metal film layer is made of any one of copper, gold, aluminum and nickel, the thickness of the film layer is 300 nm-800 nm, the substrate 1 after coating is placed into an organic solvent for soaking, high-pressure jet stripping glue, ethanol and pure water for cleaning, and then high-temperature nitrogen for cleaning and blow-drying, so that the metal grid film with a random structure is obtained.
Preferably, after the plating of the metal film 4 in the step S4 is completed, an organic solvent such as acetone or NMP is used for stripping, the soaking temperature is 20 ℃ to 25 ℃, the soaking time is 2min to 5min, the jet pressure of the solvent is 2MPa to 10MPa, ethanol and deionized water are used for rinsing the developed optical element after the stripping is completed, heated high-purity nitrogen is used for drying, and the nitrogen temperature is 50 ℃ to 70 ℃.
The following is a specific example of preparing a random-structured metal mesh electromagnetic shielding film.
1) Cleaning the surface of the substrate 1: placing the element to be cleaned in a cleaning basket, then placing the cleaning basket in a multi-tank ultrasonic cleaning device, sequentially using a special cleaning agent and DI water for ultrasonic cleaning, finally using DI water for spraying, bubbling rinsing and spin-drying, visually inspecting the surface of the substrate under the illumination of a 60W incandescent lamp, and entering the next working procedure without impurity particles and watermarks.
2) Spraying a layer of diluted negative photoresist solution on the surface of the optical element, wherein the ratio of the photoresist is as follows: acetone: butyl lactone = 1:20:1, the glue spraying temperature is 50 ℃, and the thickness is 0.5-0.8 mu m.
3) After the negative photoresist layer 2 is sprayed, the substrate is placed into a vacuum box for reflow planarization treatment, the vacuum degree of the vacuum box is-40 KPa, the vacuum box is connected with a liquid medicine bottle filled with an organic solvent through a hose, the organic solvent enters the vacuum box for fumigation on the surface of the photoresist through free volatilization, the organic solvent is acetone, the fumigation time is 5min, and the substrate is taken out after fumigation is completed.
4) And (3) putting the substrate 1 subjected to the reflow planarization treatment of the negative photoresist layer 2 into an oven for pre-baking at a baking temperature of 100 ℃ for 10min.
5) Spraying a diluted positive photoresist solution on the surface of the negative photoresist layer 2, wherein the ratio of the photoresist is as follows: acetone: butyl lactone = 1:10:0.5, the glue spraying temperature is 65 ℃ and the thickness is 3 mu m.
6) After the positive photoresist layer 3 is sprayed, the substrate 1 is placed into a vacuum box for reflow planarization treatment, the vacuum degree of the vacuum box is-60 KPa, the vacuum box is connected with a liquid medicine bottle filled with an organic solvent through a hose, the organic solvent enters the vacuum box for fumigation on the surface of the photoresist through free volatilization, the organic solvent is acetone, the fumigation time is 10min, and the substrate is taken out after fumigation is completed.
7) And (3) putting the substrate 1 subjected to the reflow planarization treatment of the positive photoresist layer 3 into an oven for pre-baking at a baking temperature of 105 ℃ for 20min.
8) And (3) exposing and developing the metal grid pattern with the random structure on the substrate 1 sprayed with the negative photoresist layer 2 and the positive photoresist layer 3 by using a vacuum mask exposure technology, putting the substrate 1 subjected to pre-baking into a vacuum exposure fixture for mask exposure, vacuumizing the mask fixture, and tightly contacting the substrate with the mask plate by using the pressure difference between the inside and outside of the fixture, wherein the vacuum degree is 5KPa. The exposure parameters were: the wavelength of the light source is 365nm, and the power density is 10mW/cm 2 Exposure time was 50s. The exposed photoresist was developed using 2.38% TMAH solution for 30s. And after the development is finished, the deionized water is used for overflow rinsing, the rinsing time is 120 seconds, the substrate is dried by using high-purity nitrogen at 60 ℃ after the rinsing is finished, and the photoresist forms an inverted T-shaped cross-section structure as shown in figure 5.
9) And (3) putting the dried substrate into a baking oven for post-baking treatment, wherein the post-baking temperature is 100 ℃, and the baking time is 10min.
10 Plating a metal film 4 on the developed optical element: plating metal film 4 by ion-assisted electron beam evaporation, wherein background vacuum is better than 10 -4 Pa, and the coating temperature is 70 ℃. Firstly, cleaning the surface of a film plating element by using an ion beam, wherein the ion source bias voltage is 135V, the discharge current is 50A, and the film plating element is cleanedWashing time is 8min; then, the ion source is used for auxiliary plating of the transition metal film chromium and the main metal film gold, when the transition metal film is plated, the ion source bias voltage is 110V, the discharge current is 50A, the evaporation rate is 0.3nm/s, the thickness of the chromium film layer is 10nm, when the main metal film is plated, the ion source is not used, the evaporation rate is 0.5nm/s, and the thickness of the gold film is 700nm.
11 After the plating of the metal film 4 is completed, acetone is used for soaking and jet flushing stripping, the soaking temperature is 22 ℃, the soaking time is 2min, and the jet pressure of the solvent is 5MPa. And after the washing is finished, the element is overflowed and rinsed by using ethanol and deionized water, the rinsing time is 120 seconds, and after the rinsing is finished, the element is dried by using 70 ℃ high-purity nitrogen, so that the metal mesh electromagnetic shielding film with the random structure is obtained.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The preparation method of the metal mesh electromagnetic shielding film with the random structure is characterized by comprising the following steps of:
s1, cleaning the surface of a substrate (1);
s2, sequentially forming a negative photoresist layer (2) and a positive photoresist layer (3) on the surface of the substrate (1);
s3, exposing and developing a metal grid pattern with a random structure by using a vacuum contact type mask exposure technology, controlling development time, and respectively forming a first development window (5) and a second development window (6) which are communicated up and down on the positive photoresist layer (3) and the negative photoresist layer (2), wherein the longitudinal section of the first development window (5) is in an inverted trapezoid shape, the longitudinal section of the second development window (6) is in a rectangle shape, and the width of the second development window (6) is larger than the width of the bottom surface of the first development window (5), so that the longitudinal sections of the first development window (5) and the second development window (6) are in an inverted T shape;
s4, plating a metal film (4) on the surface of the developed substrate (1), and stripping and drying to obtain the metal mesh electromagnetic shielding film with the random structure.
2. The method for preparing the random structure metal grid electromagnetic shielding film according to claim 1, wherein the thickness of the negative photoresist layer (2) is 0.5-0.8 μm, and the thickness of the positive photoresist layer (3) is 1.5-3 μm.
3. The method for preparing the metal mesh electromagnetic shielding film with the random structure according to claim 1, wherein the difference between the width of the second developing window (6) and the width of the first developing window (5) is 0.4-1 times of the thickness of the positive photoresist layer (3).
4. The method for preparing a metal mesh electromagnetic shielding film with a random structure according to claim 1, wherein the step S2 is specifically: and (3) sequentially spraying a layer of negative photoresist and a layer of positive photoresist on the surface of the substrate (1), and carrying out reflow planarization and pre-heating baking treatment after each layer of photoresist is sprayed.
5. The method for preparing a random structure metal mesh electromagnetic shielding film according to claim 4, wherein the sprayed negative photoresist solution and positive photoresist solution are both photoresists diluted and modified by an organic solvent, and the organic solvent is one or more of acetone, NMP and gamma-butyrolactone.
6. The method for preparing a metal mesh electromagnetic shielding film with a random structure according to claim 5, wherein the negative photoresist solution comprises a negative photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2, wherein the positive photoresist solution is prepared from positive photoresist: acetone/NMP: the mass ratio of the gamma-butyrolactone is 1: 9-30: 0.5-2.
7. The method for preparing the metal mesh electromagnetic shielding film with the random structure according to claim 6, wherein the heating temperature in the photoresist spraying process is 50-70 ℃.
8. The method for preparing the metal mesh electromagnetic shielding film with the random structure according to claim 1, wherein in the step S3, the vacuum degree is-2 KPa to-10 KPa.
9. The method for preparing the random structure metal grid electromagnetic shielding film according to claim 1, wherein the metal film (4) comprises a transition metal film layer and a main metal film layer.
10. The method for preparing the metal mesh electromagnetic shielding film with the random structure according to claim 9, wherein the transition metal film layer is made of chromium or titanium, the film layer thickness is 10-20 nm, the main metal film layer is made of any one of copper, gold, aluminum and nickel, and the film layer thickness is 300-800 nm.
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| CN101436540A (en) * | 2007-10-30 | 2009-05-20 | Wj通信公司 | Methods of minimizing etch undercut and providing clean metal liftoff |
| CN210075930U (en) * | 2019-05-07 | 2020-02-14 | 苏州麦田光电技术有限公司 | Full-embedded metal mesh electromagnetic shielding film |
| CN112864004A (en) * | 2021-01-04 | 2021-05-28 | 湘潭大学 | Method for solving burrs and photoresist removal residues in film coating process of photoetching process |
| WO2022001727A1 (en) * | 2020-07-01 | 2022-01-06 | 腾讯科技（深圳）有限公司 | Manufacturing method for indium column solder joint, chip substrate and chip |
| CN115915907A (en) * | 2023-01-05 | 2023-04-04 | 量子科技长三角产业创新中心 | Superconducting quantum chip preparation method and superconducting quantum chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436540A (en) * | 2007-10-30 | 2009-05-20 | Wj通信公司 | Methods of minimizing etch undercut and providing clean metal liftoff |
| CN210075930U (en) * | 2019-05-07 | 2020-02-14 | 苏州麦田光电技术有限公司 | Full-embedded metal mesh electromagnetic shielding film |
| WO2022001727A1 (en) * | 2020-07-01 | 2022-01-06 | 腾讯科技（深圳）有限公司 | Manufacturing method for indium column solder joint, chip substrate and chip |
| CN112864004A (en) * | 2021-01-04 | 2021-05-28 | 湘潭大学 | Method for solving burrs and photoresist removal residues in film coating process of photoetching process |
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