CN117839972B - Coating device and coating method - Google Patents
Coating device and coating method Download PDFInfo
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- CN117839972B CN117839972B CN202410259798.5A CN202410259798A CN117839972B CN 117839972 B CN117839972 B CN 117839972B CN 202410259798 A CN202410259798 A CN 202410259798A CN 117839972 B CN117839972 B CN 117839972B
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- 238000000576 coating method Methods 0.000 title claims abstract description 426
- 239000011248 coating agent Substances 0.000 title claims abstract description 405
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 239000013078 crystal Substances 0.000 claims abstract description 67
- 239000002002 slurry Substances 0.000 claims abstract description 43
- 239000006255 coating slurry Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims description 153
- 239000002131 composite material Substances 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 7
- 238000001125 extrusion Methods 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000003475 lamination Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 239000010438 granite Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Coating Apparatus (AREA)
Abstract
The invention discloses a coating device and a coating method, wherein the coating device comprises a crystal silicon bearing piece, a mask plate bearing piece and a coating head; the crystal silicon bearing piece is used for fixing crystal silicon; the mask plate bearing piece is used for fixing the mask plate and is close to the crystal silicon bearing piece so that the mask plates are arranged at intervals on the periphery of the crystal silicon; the coating head is used for coating slurry, the slurry covers the crystalline silicon and at least part of the mask plate, and the coating amount of the coating head in the joint position of the mask plate and the crystalline silicon in unit area is larger than the coating amount of the coating head in the middle of the crystalline silicon in unit area. The coating device and the coating method are used for improving the uniformity of the coating slurry coated on the crystalline silicon by the coating head and avoiding the problem of uneven coating of the edge of the crystalline silicon.
Description
Technical Field
The invention relates to the technical field of coating, in particular to a coating device and a coating method.
Background
With the continuous and intensive research on perovskite, the lamination technology of perovskite and crystalline silicon is gradually receiving attention. Existing perovskite and crystalline silicon lamination techniques include four-terminal lamination techniques and two-terminal perovskite crystalline silicon lamination techniques. Compared with the four-terminal lamination technology, the two-terminal perovskite crystal silicon lamination technology can reduce optical loss caused by parasitic absorption, has higher photoelectric efficiency, and is more widely focused.
The two-terminal perovskite crystalline silicon lamination technique requires the preparation of a perovskite absorber layer on the crystalline silicon. The perovskite absorption layer is generally prepared by coating slurry on crystalline silicon to form a film by adopting a coating head in a slit coating mode, and then forming the film by steps such as drying and crystallization. The performance of the finally prepared perovskite cell is related to the uniformity of the slurry coating on the crystalline silicon.
The chinese patent with publication No. CN115780173a discloses a film coating apparatus suitable for solar silicon wafers, the film coating apparatus includes at least one silicon wafer carrier, at least one mask carrier, a base platform and at least one leveling positioning component, the film coating apparatus can realize slit coating for the silicon wafer, there is a gap between each silicon wafer to be coated and surrounding masks, although the gap is very small (less than or equal to 5 mm), in the coating process, the liquid film covering the gap can remain in the gap and cannot drip, but with the continuous development of perovskite crystal silicon lamination technology, the requirement for uniformity of the film coating is higher and higher, the liquid film covering the gap is recessed downwards at the gap under the action of gravity, resulting in inconsistent thickness of the liquid film at the edge of the silicon wafer and thickness of the liquid film in the middle of the silicon wafer, and further resulting in affected uniformity of the liquid film.
Disclosure of Invention
Based on the above-mentioned shortcomings, the present invention aims to provide a coating device and a coating method for improving the uniformity of coating slurry on crystalline silicon by a coating head.
The invention adopts the following technical scheme:
A coating apparatus comprising:
the crystal silicon bearing piece is used for fixing crystal silicon;
the mask plate bearing piece is used for fixing the mask plate and is close to the crystal silicon bearing piece so that the mask plates are arranged at intervals on the periphery of the crystal silicon;
the coating head is used for coating slurry, the slurry covers the crystalline silicon and at least part of the mask plate, and the coating amount of the coating head in the joint position of the mask plate and the crystalline silicon in unit area is larger than that of the coating head in the middle of the crystalline silicon in unit area.
Preferably, the gap between the mask plate and the crystalline silicon comprises a Y-direction gap parallel to the coating direction of the coating head and an X-direction gap perpendicular to the coating direction of the coating head;
the coating amount of the unit area of the coating head passing through the X-direction gap is larger than the coating amount of the unit area of the coating head passing through the middle part of the crystal silicon, and/or the coating amount of the unit area of the coating head corresponding to the Y-direction gap is larger than the coating amount of the unit area of the coating head corresponding to the middle part of the crystal silicon.
Preferably, the control assembly is further included;
the control assembly comprises a raw material supply part and an adjusting part, wherein the raw material supply part is used for supplying coating slurry to the coating head, and the adjusting part is connected with the raw material supply part and can adjust the supply amount of the raw material supply part;
And/or the control component is used for adjusting the movement speed of the coating head.
Preferably, the coating head comprises a first die body, a second die body and a composite gasket arranged between the first die body and the second die body, wherein one side edge of the composite gasket forms a liquid outlet with the first die body and the second die body;
the liquid outlet is divided into a first liquid outlet area corresponding to the Y-direction gap and a second liquid outlet area corresponding to the middle part of the crystal silicon, and the width of the first liquid outlet area is larger than that of the second liquid outlet area; the first liquid outlet area is used for coating slurry to the Y-direction gap, and the second liquid outlet area is used for coating slurry to the middle part of the crystal silicon and the X-direction gap.
Preferably, the compound gasket includes first gasket and the second gasket of stacking along compound gasket thickness direction, first fretwork district has been seted up to first gasket, the second fretwork district has been seted up to the second gasket, the second fretwork district with part first fretwork district coincidence intercommunication just extends to compound gasket edge and corresponds and form first play liquid district, the first fretwork district not with the part of second fretwork district coincidence extends to compound gasket edge and corresponds and form the second and go out liquid district.
Preferably, the thickness of the non-hollowed-out area of the first gasket is 50-80 μm, and the thickness of the non-hollowed-out area of the second gasket is 10-80 μm;
The width of the first liquid outlet area is 1.2-2.6 times of the width of the second liquid outlet area, the width of the first liquid outlet area is 60-160 mu m, and the width of the second liquid outlet area is 50-80 mu m; the width direction of the first liquid outlet area is parallel to the coating direction of the coating head, and the width direction of the Y-direction gap is perpendicular to the coating direction of the coating head;
The second gasket is provided with two second hollow areas which are arranged at intervals, and each second hollow area is communicated with part of the first hollow areas and corresponds to the first hollow areas to form a first liquid outlet area; the crystalline silicon is square, and the mask plate is provided with a hollowed-out structure matched with the crystalline silicon in shape.
Preferably, the length of the first liquid outlet area is 0.1-3 times of the width of the Y-direction gap, the length of the first liquid outlet area is 0.01-1.8mm, and the width of the Y-direction gap is 0.1-0.6mm; the length direction of the first liquid outlet area is perpendicular to the coating direction of the coating head.
A coating method applied to the coating apparatus of any one of the above, the coating method comprising:
mounting the crystalline silicon on a crystalline silicon bearing piece, and mounting a mask plate on the mask plate bearing piece;
And controlling the coating head to coat slurry to the crystalline silicon, and controlling the coating amount of the coating head in the joint position of the mask plate and the crystalline silicon in unit area to be larger than the coating amount of the coating head in the middle of the crystalline silicon in unit area.
Preferably, the gap between the mask plate and the crystalline silicon comprises a Y-direction gap parallel to the coating direction of the coating head and an X-direction gap perpendicular to the coating direction of the coating head;
The method for controlling the coating amount of the coating head in the joint of the mask plate and the crystalline silicon in unit area is larger than the coating amount of the coating head in the middle of the crystalline silicon in unit area, and specifically comprises the following steps:
Adjusting the liquid outlet amount of the coating head, so that the coating amount of the coating head in unit area is larger than the coating amount of the coating head in unit area when the coating head coats the middle part of the crystal silicon when the coating head passes through the X-direction gap and/or the Y-direction gap;
and/or, further comprising: and enabling the surface to be coated of the crystalline silicon to be flush with the surface of the mask plate.
Preferably, the coating head is adjacent to the front and rear of the X-direction slit in the coating direction, and the coating amount per unit area when the coating head is located above the X-direction slit is larger than the coating amount per unit area when the coating head coats the middle part of the crystalline silicon.
Preferably, the coating head sequentially passes through the rear and the front of the X-direction slit along the coating direction, the coating head starts to increase the coating amount at a first distance behind the X-direction slit, and restores the original coating amount at a second distance in front of the X-direction slit; the first spacing is 1-10mm, and the second spacing is 1-5mm.
Preferably, the coating head increases the coating amount per unit area of the coating head by increasing the paste extrusion amount to 110% -200% of the original coating amount;
or the coating head increases the coating amount of the unit area of the coating head by reducing the moving speed of the coating head to 50% -90% of the initial moving speed.
Preferably, the liquid outlet amount of the coating head at the Y-direction gap and/or the middle part of the crystal silicon is adjusted by adjusting the width of the liquid outlet of the coating head at the Y-direction gap and/or the middle part of the crystal silicon.
Compared with the prior art, the invention has the beneficial effects that at least:
By arranging the mask plate bearing piece, the influence of the uneven area at the edge of the coating head on the liquid film extension of the crystal silicon surface is avoided. The coating amount of the coating head at different positions is changed, so that the coating amount of the coating head per unit area at the joint of the crystal silicon and the mask plate, namely, the gap formed by the coating head and the mask plate is increased, slurry flowing into the gap is compensated, and the phenomenon that the uniformity of a liquid film on the crystal silicon surface is influenced due to the fact that the liquid film formed on the crystal silicon surface forms a meniscus at the edge of the crystal silicon due to the loss of the slurry is avoided; by compensating slurry flowing into the gap, the liquid film at the edge of the crystal silicon can be kept balanced with the liquid film in the middle of the crystal silicon even if part of the liquid film flows into the gap, so that the surface of the crystal silicon forms a uniformly connected liquid film.
Drawings
FIG. 1 is a schematic cross-sectional view of a part of the structure of a coating apparatus of an embodiment of the present invention;
FIG. 2 is a top view showing a part of the structure of a coating apparatus according to an embodiment of the present invention;
Fig. 3 is an enlarged view of a portion a in fig. 2;
FIG. 4 is a plan view showing a part of the structure of the coating device according to the embodiment of the present invention when coating a liquid film;
FIG. 5 is a schematic view of the structure of the coating device according to the embodiment of the present invention when coating a liquid film;
FIG. 6 is a schematic diagram of a control assembly and a coating head according to an embodiment of the present invention;
FIG. 7 is a schematic view showing a structure of a coating device according to an embodiment of the present invention in a further state when the coating device coats a liquid film;
fig. 8 is an enlarged view of a portion C in fig. 7;
FIG. 9 is a schematic exploded view of a gasket according to an embodiment of the present invention;
FIG. 10 is a cross-sectional view of an applicator head according to an embodiment of the present invention;
FIG. 11 is a cross-sectional view of an embodiment of the present invention with the applicator head in yet another cut-away position;
FIG. 12 is a schematic view showing still another state when a liquid film is applied by the application device according to the embodiment of the present invention.
In the figure: 1. a crystalline silicon carrier; 11. crystalline silicon; 12. a mask plate; 2. mask plate carrier; 3. a coating head; 31. a first die body; 32. a second die body; 33. a composite gasket; 331. a first gasket; 332. a second gasket; 334. a first hollow region; 335. a second hollow region; 341. a first liquid outlet region; 342. a second liquid outlet area; 4. an X-direction slit; 5. y-direction slits; 61. a raw material supply member; 62. an adjusting member; 63. a valve; 7. a liquid film; d1, a first interval; d2, second spacing.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus a repetitive description thereof will be omitted.
The words expressing the positions and directions described in the present invention are described by taking the drawings as an example, but can be changed according to the needs, and all the changes are included in the protection scope of the present invention.
As shown in fig. 1 to 12, the present invention provides a coating apparatus, which includes a crystalline silicon carrier 1, a mask plate carrier 2, and a coating head 3.
The silicon carrier 1 is used for fixing the silicon 11. The outer contour of the crystalline silicon carrier 1 may coincide with the outer contour of the crystalline silicon 11 or be smaller than the outer contour of the crystalline silicon 11. The crystal silicon carrier 1 may be a metal chuck, a vacuum chuck, a granite platform with a fixing structure such as an adsorption hole, and the crystal silicon carrier 1 may fix the crystal silicon 11 by fastening or adsorbing. When the crystalline silicon 11 is fixedly mounted on the crystalline silicon carrier 1, the central axis of the crystalline silicon 11 may coincide with the central axis of the crystalline silicon carrier 1, so that the central positions of the crystalline silicon 11 and the crystalline silicon carrier 1 coincide, and the crystalline silicon carrier 1 is convenient for supporting and fixing the crystalline silicon 11. The crystalline silicon 11 is a member to be coated with the slurry. The crystalline silicon 11 may have a square structure, for example, a rectangular structure or a square structure.
The mask carrier 2 is used for fixing the mask 12. The mask plate carrier 2 is close to the crystal silicon carrier 1, for example, the mask plate carrier 2 is arranged at intervals on the periphery of the crystal silicon carrier 1, for example, a cavity is formed in the mask plate carrier 2, and at least one part of the crystal silicon carrier 1 is arranged in the cavity, so that the mask plate carrier 2 is arranged around the periphery of the crystal silicon carrier 1. The mask plate carrier 2 may be a metal chuck, a vacuum chuck, a granite platform with a fixing structure such as an adsorption hole, etc., and the mask plate carrier 2 may fix the mask plate 12 by a fastening or adsorption manner. Wherein, the mask plate 12 may be provided with an avoiding hole, and the shape of the avoiding hole is matched with the shape of the crystalline silicon 11, that is, when the crystalline silicon 11 is square, the avoiding hole is square. The size of the dodging hole is slightly larger than that of the crystalline silicon 11 so as to facilitate the installation of the crystalline silicon 11. After the mask plate 12 is fixedly mounted on the mask plate carrier 2, the crystalline silicon 11 is located in the avoidance hole formed by the mask plate 12, the mask plates 12 are arranged on the periphery of the crystalline silicon 11 at intervals, and the surface to be coated of the crystalline silicon 11 can be flush with the surface of the mask plate 12.
The coating head 3 is used for coating slurry to the crystalline silicon 11 to form a liquid film 7 on the surface of the crystalline silicon 11. Referring to fig. 4, when the slurry is applied to the crystalline silicon 11, the application area of the application head 3 is larger than the surface area of the crystalline silicon 11, and the formed liquid film 7 covers the surface of the crystalline silicon 11 and a part of the surface of the mask plate 12. For example, the liquid film 7 covers the entire surface of the crystalline silicon 11 and the portion of the surface of the mask plate 12 adjacent to the crystalline silicon 11. Therefore, the edge area of the liquid film 7 formed by the coating head 3 is positioned above the mask plate 12, and the center area of the liquid film 7 formed by the coating head 3 is positioned above the crystal silicon 11. Therefore, the coating head 3 is coated on the mask plate 12 in the edge non-uniform area formed by the slit coating, so that the uniformity of the liquid film 7 on the surface of the crystalline silicon 11 is not affected, and the uniformity of the coating slurry on the crystalline silicon 11 by the coating head 3 can be effectively improved. The slurry may be perovskite slurry, and the perovskite slurry may form a perovskite liquid film on the surface of the crystalline silicon 11, and the perovskite liquid film may form a perovskite absorption layer after undergoing subsequent processes such as drying and nucleation.
Referring to fig. 5, in the coating process, since the mask plate 12 and the crystalline silicon 11 are disposed at intervals, the slurry coated on the edge of the crystalline silicon 11 may flow into the gap between the crystalline silicon 11 and the mask plate 12, resulting in a decrease of the slurry per unit area of the edge of the crystalline silicon 11, and further, a partial uneven thickness area may exist on the edge of the crystalline silicon 11, and a thinning phenomenon may occur on the edge of the liquid film formed on the surface of the crystalline silicon 11. In addition, the edge of the crystal silicon 11 may have a chamfer, and the chamfer structure may also enable the edge position of the liquid film formed on the surface of the crystal silicon 11 to be thinned. In order to remove the uneven thickness area at the edge of the crystalline silicon 11 and overcome the thinning phenomenon of the edge of the liquid film, the coating amount of the coating head 3 per unit area at the joint of the mask plate 12 and the crystalline silicon 11 is larger than that of the coating head 3 per unit area at the middle part of the crystalline silicon 11, and the increased coating amount of the coating head 3 per unit area at the joint of the mask plate 12 and the crystalline silicon 11 can compensate the slurry flowing to the gap between the crystalline silicon 11 and the mask plate 12, so that the slurry is kept balanced at the edge of the crystalline silicon 11 and the slurry in the middle part of the crystalline silicon 11, and further the surface of the crystalline silicon 11 can form a continuous and even liquid film 7, and the thinning phenomenon of the edge of the liquid film is overcome. The junction between the mask plate 12 and the crystalline silicon 11 may include a position of the mask plate 12 adjacent to the crystalline silicon 11, a position of the crystalline silicon 11 adjacent to the mask plate 12, and a gap between the crystalline silicon 11 and the mask plate 12.
Referring to fig. 1 and 2, the gap between the mask plate 12 and the crystalline silicon 11 includes a Y-direction slit 5 parallel to the coating direction of the coating head 3, and an X-direction slit 4 perpendicular to the coating direction of the coating head 3. The coating amount per unit area of the coating head 3 passing through the X-direction slit 4 may be larger than the coating amount per unit area of the coating head 3 passing through the middle of the crystalline silicon 11 to compensate for the slurry flowing into the X-direction slit 4. As shown in fig. 2, the coating direction of the coating head 3 is the X-axis direction, and the direction perpendicular to the coating direction of the coating head 3 is the Y-axis direction.
In order to control the coating amount of the coating head 3 in the X-direction slit 4, the coating device can further comprise a control component. Referring to fig. 6, the control assembly may include a raw material supply 61 and an adjustment 62, and may further include a valve 63. The raw material supply member 61 may be connected to the coating head 3 through a pipe, and the raw material supply member 61 is used to supply the coating slurry to the coating head 3. The regulator 62 may be connected to the raw material supply member 61 and can adjust the supply amount of the raw material supply member 61. The adjusting member 62 may be specifically connected to a pipe line where the raw material supplying member 61 is connected to the coating head 3, so as to adjust the flow rate of the slurry in the pipe line, and thus adjust the coating amount of the coating head 3. A valve 63 may be provided on a line between the raw material supply member 61 and the regulating member 62 to control on-off between the raw material supply member 61 and the regulating member 62; a valve 63 may also be provided in the line between the regulating member 62 and the coating head 3 to control the on-off of the coating head 3 with the regulating member 62 and the raw material supply member 61.
The raw material supply member 61 may be a material tank in which slurry is stored. The adjusting member 62 may be a high-precision pre-metering pump for drawing the slurry in the raw material supply member 61 to the coating head 3, and the high-precision pre-metering pump may also adjust the flow rate of the slurry in the pipe as needed.
The control assembly may control the coating amount per unit area of the coating head 3 to increase as the coating head 3 passes through the X-directional slit 4. Specifically, the coating head 3 moves along the X-axis direction at a constant speed, the liquid outlet of the coating head 3 extends along the Y-axis direction, the coating head 3 firstly performs coating on the mask plate 12 and gradually approaches to one X-direction slit 4, when the coating head 3 is about to move to the X-direction slit 4 and before passing over the X-direction slit 4, i.e. before the coating head 3 moves to the E (as shown in fig. 8) near the X-direction slit 4, the control component can control the coating amount of the unit area of the coating head 3 to increase, and when the coating head 3 passes over the X-direction slit 4 and passes over the X-direction slit 4, i.e. after the coating head 3 moves to the F (as shown in fig. 8) at the other side of the X-direction slit 4, the control component can control the coating head 3 to restore the initial coating amount. The initial coating amount of the coating head 3 is the coating amount per unit area of the coating head 3 in the normal coating process, for example, the coating amount per unit area when the coating head 3 coats the middle part of the crystalline silicon 11.
In addition, the control component can also adjust the coating amount per unit area when the coating head 3 passes through the X-direction gap 4 by controlling the moving speed of the coating head 3. Specifically, the coating head 3 moves along the X-axis direction, the liquid outlet of the coating head 3 extends along the Y-axis direction, the coating head 3 firstly performs coating on the mask plate 12 and gradually approaches to one X-direction slit 4, when the coating head 3 moves to the X-direction slit 4 just before passing over the X-direction slit 4, i.e. before the coating head 3 moves to the E (as shown in fig. 8) near the X-direction slit 4, the control component can control the speed of the coating head 3 to decrease, at this time, the coating amount per unit area of the coating head 3 can be kept unchanged or increased, and when the coating head 3 passes over the X-direction slit 4 and passes over the X-direction slit 4, i.e. after the coating head 3 moves to the F (as shown in fig. 8) at the other side of the X-direction slit 4, the control component controls the coating head 3 to resume the initial moving speed. Between the point E and the point F, the coating amount of the coating head 3 is not changed or increased as the speed of the coating head 3 is reduced, and thus the coating amount of the coating head 3 per unit area is increased. The initial moving speed of the coating head 3 is the moving speed of the coating head 3 during normal coating, for example, the moving speed of the coating head 3 during coating the middle part of the crystal silicon 11. The control component can be a driving structure such as a motor capable of adjusting speed, and the control component is used for driving the coating head 3 to move and adjusting the moving speed of the coating head 3.
In this embodiment, the gap between the mask plate 12 and the crystalline silicon 11 includes two parallel Y-direction slits 5 and two parallel X-direction slits 4 located at the peripheral side of the crystalline silicon 11, where the changing positions E and F for changing the coating amount are formed at both sides of each X-direction slit 4 along the coating direction of the coating head 3, the coating head 3 firstly coats on the mask plate 12 and gradually approaches one X-direction slit 4, when the coating head 3 moves to the position E corresponding to one X-direction slit 4, the coating head 3 starts to increase the coating amount, and/or the coating head 3 starts to slow down the moving speed, and when the coating head 3 moves to the position F corresponding to the X-direction slit 4, the coating head 3 resumes the coating amount and/or the moving speed; then the middle part of the crystalline silicon 11 is coated by the coating head 3; when the coating head 3 moves to the E corresponding to the other X-direction slit 4, similarly, the coating head 3 starts to increase the coating amount, and/or the coating head 3 starts to slow down the moving speed, and when the coating head 3 moves to the F corresponding to the other X-direction slit 4, the coating head 3 resumes the coating amount and/or the moving speed. Wherein, in the coating direction along the coating head 3, the E position is 1-10mm away from the X-direction gap 4, and the F position is 1-5mm away from the X-direction gap 4.
It should be noted that the control unit may control the coating amount per unit area of the coating head 3 by adjusting only the coating amount of the coating head 3, or the control unit may control the coating amount per unit area of the coating head 3 by controlling only the moving speed of the coating head 3, or the control unit may control the coating amount per unit area of the coating head 3 by adjusting both the coating amount of the coating head 3 and the moving speed of the coating head 3.
When the control component only adjusts the coating amount of the coating head 3, the control component can control the coating amount of the coating head 3 to be increased to 110% -200% of the initial coating amount when the coating head 3 is about to move to an X-direction gap 4, namely, the coating head 3 moves to an E position corresponding to the X-direction gap 4, and can control the coating head 3 to restore the initial coating amount after the coating head 3 passes through the X-direction gap 4 and passes through the X-direction gap 4, namely, the coating head 3 moves to an F position corresponding to the X-direction gap 4, so that the coating amount increased when the coating head 3 passes through the X-direction gap 4 can just compensate the slurry flowing into the X-direction gap 4, so that the thinned part of the edge of the liquid film on the crystal silicon 11 is filled, and the slurry can form a continuous uniform liquid film 7 on the surface of the crystal silicon 11.
When the control component only adjusts the moving speed of the coating head 3, the control component can control the coating amount of the coating head 3 to be increased to 50% -90% of the initial moving speed when the coating head 3 is about to move to an X-direction gap 4, namely, the coating head 3 moves to an E position corresponding to the X-direction gap 4, and can control the coating head 3 to restore the initial moving speed after the coating head 3 passes through the X-direction gap 4 and passes through the X-direction gap 4, namely, the coating head 3 moves to an F position corresponding to the X-direction gap 4, so that the coating amount of the coating head 3 increased when passing through the X-direction gap 4 can just compensate the slurry flowing into the X-direction gap 4 to fill the thinned part of the edge of the liquid film on the crystal silicon 11, and further, the slurry can form a continuous uniform liquid film 7 on the surface of the crystal silicon 11.
When the control component adjusts the coating amount of the coating head 3 and the moving speed of the coating head 3, the coating amount of the coating head 3 and the moving speed of the coating head 3 are adjusted according to the requirement, so that the coating amount per unit area of the coating head 3 passing through the X-direction gap 4 is increased by 10% -100%, the coating amount of the coating head 3 increased when passing through the X-direction gap 4 can just compensate the slurry flowing into the X-direction gap 4, so that the thinned part of the edge of the liquid film on the crystal silicon 11 is filled, and the slurry can form a continuous and uniform liquid film 7 on the surface of the crystal silicon 11.
Referring to fig. 9 to 12, the coating amount per unit area of the coating head 3 corresponding to the Y-direction slit 5 may be greater than the coating amount per unit area of the coating head 3 corresponding to the middle portion of the crystalline silicon 11. The coating head 3 can specifically adjust the coating amount per unit area of the coating head 3 by adjusting the structure of the internal gasket thereof. The coating head 3 may include a first die body 31, a second die body 32, and a composite shim 33 disposed between the first die body 31 and the second die body 32. One side edge of the composite gasket 33 forms a liquid outlet with the first die body 31 and the second die body 32. Through the structure of adjustment compound gasket 33 to make the liquid outlet width that forms uneven, the great partial play liquid volume of liquid outlet width is more, and the less partial play liquid volume of liquid outlet width is less. Therefore, by adjusting the structure of the composite spacer 33, the structure of the liquid outlet can be adjusted, so that the portion with a larger liquid outlet width corresponds to the Y-direction slit 5, the portion with a smaller liquid outlet width corresponds to the middle position of the crystal silicon 11, and the portion with a smaller liquid outlet width can also correspond to the mask 12.
The liquid outlet can be divided into a first liquid outlet area 341 and a second liquid outlet area 342 according to different widths. The first liquid outlet region 341 may be configured to uniformly discharge all the liquid in each portion, and the second liquid outlet region 342 may be configured to uniformly discharge all the liquid in each portion. The width B1 of the first liquid outlet area 341 is greater than the width B2 of the second liquid outlet area 342, the first liquid outlet area 341 may correspond to the Y-direction slit 5 and is used for coating the Y-direction slit 5, the second liquid outlet area 342 may correspond to the middle position of the crystalline silicon 11 and is used for coating the middle position of the crystalline silicon 11, and the second liquid outlet area 342 may also correspond to the mask plate 12 and is used for coating the mask plate 12; so that the coating amount of the coating head 3 in the unit area corresponding to the Y-direction gap 5 is larger than the coating amount of the coating head 3 in the unit area corresponding to the middle part of the crystal silicon 11. The coating amount of the coating head 3 at the position corresponding to the Y-direction gap 5, which is increased compared with the coating amount of the coating head 3 at the position corresponding to the middle part of the crystal silicon 11, can just compensate the slurry flowing into the Y-direction gap 5 so as to fill up the thinned part of the edge of the upper liquid film of the crystal silicon 11, and further, the slurry can form a continuous and uniform liquid film 7 on the surface of the crystal silicon 11.
The width B1 of the first liquid outlet region 341 may be 1.2-2.6 times the width B2 of the second liquid outlet region 342. The length L of the first liquid outlet region 341 along the coating direction of the vertical coating head 3 may be 0.1-3 times the width B3 of the Y-direction slit 5, and the first liquid outlet region 341 and the Y-direction slit 5 may be aligned in the middle. Specifically, the width B1 of the first liquid outlet region 341 may be 60-160 μm, the width B2 of the second liquid outlet region 342 may be 50-80 μm, the length L of the first liquid outlet region 341 may be 0.01-1.8mm, and the width B3 of the Y-direction slit 5 may be 0.1-0.6mm.
In order to form the first liquid outlet region 341 and the second liquid outlet region 342 having different widths at the liquid outlet, the composite gasket 33 may include a first gasket 331 and a second gasket 332 stacked in the thickness direction thereof. The first pad 331 is provided with a first hollow area 334, the first hollow area 334 is, for example, a rectangular hollow structure, and one end of the first hollow area 334 extends to the edge of the composite pad 33, so that the first pad 331 is substantially in a U-shaped structure; the length of the first hollow area 334 adjacent to the liquid outlet side may be the same as the length of the liquid outlet. The thickness of the non-hollowed-out area of the first pad 331 may be 50-80 μm.
The second pad 332 is provided with a second hollow area 335, the second hollow area 335 may be substantially rectangular and shaped in a slit, and extends from the inside of the second pad 332 to one side, and the length of the second hollow area 335 adjacent to the liquid outlet side may be the same as the length L of the first liquid outlet area 341. The thickness of the non-hollowed-out area of the second pad 332 may be 10-80 μm.
The overlapping portion of the second hollow area 335 and the first hollow area 334 forms a chamber with a thicker thickness, and the thickness of the first hollow area 334 at the position not overlapping with the second hollow area 335 is thinner. The thickness of the overlapping part of the second hollow area 335 and the first hollow area 334 is the sum of the thicknesses of the first hollow area 334 and the second hollow area 335; the thickness of the first hollow region 334 at the position not overlapping with the second hollow region 335 is only the thickness of the first hollow region 334. Therefore, the composite pad 33 may form regions with different thicknesses, the portion of the second hollow area 335 overlapping the first hollow area 334 may extend to the edge of the composite pad 33 and form part of the liquid outlet, for example, the portion of the liquid outlet corresponding to the first liquid outlet 341 may be formed, and the portion of the first hollow area 334 not overlapping the second hollow area 335 may extend to the edge of the composite pad 33 and form another portion of the liquid outlet, for example, the portion of the liquid outlet corresponding to the second liquid outlet 342 may be formed. Thus, the first width B1 of the first liquid outlet region 341 is greater than the second width B2 of the second liquid outlet region 342 such that the slurry applied per unit area of the first liquid outlet region 341 is greater than the slurry applied per unit area of the second liquid outlet region 342.
When the gap between the mask plate 12 and the crystal silicon 11 includes two parallel Y-direction slits 5, two first liquid outlet regions 341 may be provided, and the first liquid outlet regions 341 are in one-to-one correspondence with the Y-direction slits 5. In order to form two first liquid outlet areas 341, two second hollow areas 335 may be disposed at intervals, and a portion of each second hollow area 335 overlapped with the first hollow area 334 extends to the edge of the composite pad 33 and forms a second liquid outlet 341, so that two second hollow areas 335 are overlapped with a corresponding portion of the first hollow area 334 and can form two first liquid outlet areas 341.
First liquid outlet zone the invention also provides a coating method which is applied to the coating device. The coating method comprises the following steps: step S01 and step S02.
Step S01: the crystalline silicon 11 is mounted on the crystalline silicon carrier 1, and the mask plate 12 is mounted on the mask plate carrier 2. Step S01 may further include: the surface to be coated of the crystalline silicon 11 is flush with the surface of the mask plate 12.
Step S02: the coating head 3 is controlled to coat slurry to the crystalline silicon 11, and the coating amount of the coating head 3 in the unit area of the joint of the mask plate 12 and the crystalline silicon 11 is controlled to be larger than the coating amount of the coating head 3 in the unit area of the middle part of the crystalline silicon 11.
The step S02 may specifically include:
Step S21: the liquid outlet amount of the coating head 3 is regulated so that the coating amount per unit area of the coating head 3 when the coating head 3 passes through the X-direction gap 4 is larger than the coating amount per unit area of the coating head 3 when the coating head coats the middle part of the crystalline silicon 11.
Step S22: the liquid outlet amount of the coating head 3 is adjusted so that the coating amount per unit area of the coating head 3 used for coating the Y-direction slit 5 is larger than the coating amount per unit area of the coating head 3 used for coating the middle part of the crystal silicon 11.
Referring to fig. 7 and 8, step S21 may specifically include: the liquid outlet amount of the coating head 3 is adjusted so that the coating head 3 is adjacent to the front and rear of the X-direction slit 4 in the coating direction, and the coating amount per unit area when the coating head 3 is positioned above the X-direction slit 4 is larger than the coating amount per unit area when the coating head 3 coats the middle part of the crystalline silicon 11. Specifically, in the coating direction along the coating head 3, the coating head 3 sequentially passes behind and in front of the X-direction slit 4, the coating head 3 starts to increase in coating amount at a first distance D1 behind the X-direction slit 4, and resumes the original coating amount at a second distance D2 in front of the X-direction slit 4. The first distance D1 may be 1-10mm, the second distance D2 may be 1-5mm, and the width B4 of the X-direction slit 4 may be 10-60 μm. The width direction of the X-direction slit 4 may be parallel to the application direction of the application head 3.
Wherein the adjustment of the coating amount of the coating head 3 can be achieved by a control assembly in the coating device. For example, when the coating head 3 passes through the X-direction slit 4, the control assembly can control the extrusion amount of the slurry in the coating head 3 to be increased to 110% -200% of the original extrusion amount; or when the coating head 3 passes through the X-direction gap 4, the control component can control the movement speed of the coating head 3 to be reduced to 50% -90% of the initial movement speed, or when the coating head 3 passes through the X-direction gap 4, the control component can control the slurry extrusion amount of the coating head 3 and the movement speed of the coating head 3 in a combined mode, so that the increased coating amount of the coating head 3 at the X-direction gap 4 can compensate the slurry flowing into the X-direction gap 4, and further, the slurry can form a continuous and uniform liquid film 7 on the surface of the crystal silicon 11.
Step S22 may specifically include: the liquid outlet of the coating head 3 at the middle part of the Y-direction gap 5 and/or the crystal silicon 11 is adjusted by adjusting the width of the liquid outlet of the coating head 3 corresponding to the Y-direction gap 5 and/or the width of the liquid outlet corresponding to the middle part of the crystal silicon 11. Specifically, the width of the liquid outlet can be adjusted by adjusting the structure of the composite pad 33. For example, the composite gasket 33 is formed by stacking the first gasket 331 and the second gasket 332, the first gasket 331 and the second gasket 332 respectively form hollow areas, the width of the overlapping part of the hollow areas in the first gasket 331 and the second gasket 332 is larger, and the width of the non-overlapping part of the hollow areas in the first gasket 331 and the second gasket 332 is smaller, so that the composite gasket 33 forms a liquid outlet with uneven width; and the width of the liquid outlet can be adjusted by adjusting the thickness of the first gasket 331 and the second gasket 332. The width of the liquid outlet is adjusted, so that the coating amount of the coating head 3 in the unit area of the Y-direction gap 5 is larger than the coating amount of the coating head 3 in the unit area of the middle part of the crystal silicon 11, the coating amount of the coating head 3 increased in the Y-direction gap 5 can compensate the slurry flowing into the Y-direction gap 5, and the slurry can form a continuous and uniform liquid film 7 on the surface of the crystal silicon 11.
By the cooperation of the step S21 and the step S22, the uneven areas of the liquid film 7 at all edge positions of the crystal silicon 11 can be removed, so that the liquid film 7 forms a continuous and balanced structure on the surface of the crystal silicon 11, and the performance of the finally prepared perovskite battery is improved. In addition, the ways of adjusting the coating amount of the coating head 3 in unit area in the step S21 and the step S22 are not mutually influenced, and when the slurry is coated on the surface of the crystalline silicon 11, the step S21 and the step S22 can be simultaneously performed by adopting the same coating head 3, so that the uniformity of the slurry coated on the crystalline silicon 11 by the coating head 3 is simply, conveniently and effectively improved.
While embodiments of the present invention have been shown and described, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that changes, modifications, substitutions and alterations may be made therein by those of ordinary skill in the art without departing from the spirit and scope of the invention, all such changes being within the scope of the appended claims.
Claims (13)
1. A coating apparatus, characterized by comprising:
the crystal silicon bearing piece is used for fixing crystal silicon;
the mask plate bearing piece is used for fixing the mask plate and is close to the crystal silicon bearing piece so that the mask plates are arranged at intervals on the periphery of the crystal silicon;
The coating head is used for coating slurry, the slurry covers the crystalline silicon and at least part of the mask plate, and the coating amount of the coating head in the joint position of the mask plate and the crystalline silicon in unit area is larger than that of the coating head in the middle of the crystalline silicon in unit area;
The gap between the mask plate and the crystalline silicon comprises a Y-direction gap parallel to the coating direction of the coating head, and the coating amount of the unit area of the coating head corresponding to the Y-direction gap is larger than the coating amount of the unit area of the coating head corresponding to the crystalline silicon;
the coating head comprises a first die body, a second die body and a composite gasket arranged between the first die body and the second die body, wherein a liquid outlet is formed between one side edge of the composite gasket and the first die body and the second die body;
The liquid outlet is divided into a first liquid outlet area corresponding to the Y-direction gap and a second liquid outlet area corresponding to the middle part of the crystal silicon, and the width of the first liquid outlet area is larger than that of the second liquid outlet area; the first liquid outlet area is used for coating slurry to the Y-direction gap, and the second liquid outlet area is used for coating slurry to the middle part of the crystal silicon.
2. The coating apparatus of claim 1, wherein the gap between the mask plate and the crystalline silicon further comprises an X-direction slit perpendicular to the coating direction of the coating head; the coating amount of the unit area of the coating head passing through the X-direction gap is larger than that of the unit area of the coating head passing through the middle part of the crystal silicon.
3. The coating apparatus of claim 2, further comprising a control assembly;
the control assembly comprises a raw material supply part and an adjusting part, wherein the raw material supply part is used for supplying coating slurry to the coating head, and the adjusting part is connected with the raw material supply part and can adjust the supply amount of the raw material supply part;
And/or the control component is used for adjusting the movement speed of the coating head.
4. The coating apparatus of claim 2, wherein the second liquid outlet zone is further configured to apply a slurry to the X-direction gap.
5. The coating device of claim 4, wherein the composite gasket comprises a first gasket and a second gasket stacked along the thickness direction of the composite gasket, the first gasket is provided with a first hollow area, the second gasket is provided with a second hollow area, the second hollow area is in overlapping communication with a part of the first hollow area and extends to the edge of the composite gasket to form a first liquid outlet area correspondingly, and a part of the first hollow area, which does not overlap with the second hollow area, extends to the edge of the composite gasket to form a second liquid outlet area correspondingly.
6. The coating apparatus of claim 5, wherein the thickness of the non-hollowed-out area of the first spacer is 50-80 μm and the thickness of the non-hollowed-out area of the second spacer is 10-80 μm;
The width of the first liquid outlet area is 1.2-2.6 times of the width of the second liquid outlet area, the width of the first liquid outlet area is 60-160 mu m, and the width of the second liquid outlet area is 50-80 mu m; the width direction of the first liquid outlet area is parallel to the coating direction of the coating head, and the width direction of the Y-direction gap is perpendicular to the coating direction of the coating head;
The second gasket is provided with two second hollow areas which are arranged at intervals, and each second hollow area is communicated with part of the first hollow areas and corresponds to the first hollow areas to form a first liquid outlet area; the crystalline silicon is square, and the mask plate is provided with a hollowed-out structure matched with the crystalline silicon in shape.
7. The coating apparatus of claim 6, wherein the length of the first liquid outlet region is 0.1-3 times the width of the Y-direction slit, the length of the first liquid outlet region is 0.01-1.8mm, and the width of the Y-direction slit is 0.1-0.6mm; the length direction of the first liquid outlet area is perpendicular to the coating direction of the coating head.
8. A coating method, characterized in that the coating method is applied to the coating apparatus according to any one of claims 1 to 7, the coating method comprising:
mounting the crystalline silicon on a crystalline silicon bearing piece, and mounting a mask plate on the mask plate bearing piece;
And controlling the coating head to coat slurry to the crystalline silicon, and controlling the coating amount of the coating head in the joint position of the mask plate and the crystalline silicon in unit area to be larger than the coating amount of the coating head in the middle of the crystalline silicon in unit area.
9. The coating method according to claim 8, wherein the gap between the mask plate and the crystalline silicon includes a Y-direction gap parallel to the coating direction of the coating head, and an X-direction gap perpendicular to the coating direction of the coating head;
The method for controlling the coating amount of the coating head in the joint of the mask plate and the crystalline silicon in unit area is larger than the coating amount of the coating head in the middle of the crystalline silicon in unit area, and specifically comprises the following steps:
Adjusting the liquid outlet amount of the coating head, so that the coating amount of the coating head in unit area is larger than the coating amount of the coating head in unit area when the coating head coats the middle part of the crystal silicon when the coating head passes through the X-direction gap and/or the Y-direction gap;
and/or, further comprising: and enabling the surface to be coated of the crystalline silicon to be flush with the surface of the mask plate.
10. The coating method according to claim 9, wherein the coating head is located near the front and rear of the X-direction slit in the coating direction, and the coating amount per unit area when the coating head is located above the X-direction slit is larger than the coating amount per unit area when the coating head coats the middle portion of the crystalline silicon.
11. The coating method according to claim 10, wherein the coating head passes behind and in front of the X-direction slit in order in the coating direction, the coating head starts increasing the coating amount at a first distance behind the X-direction slit, and resumes the original coating amount at a second distance in front of the X-direction slit; the first spacing is 1-10mm, and the second spacing is 1-5mm.
12. The coating method according to claim 11, wherein the coating head increases the coating amount per unit area of the coating head by increasing the paste extrusion amount to 110% -200% of the original coating amount;
or the coating head increases the coating amount of the unit area of the coating head by reducing the moving speed of the coating head to 50% -90% of the initial moving speed.
13. The coating method according to claim 9, wherein the liquid outlet amount of the coating head at the Y-direction slit and/or the middle part of the crystal silicon is adjusted by adjusting the width of the liquid outlet of the coating head at the Y-direction slit and/or the middle part of the crystal silicon.
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