TW201347858A - Coating method and coating apparatus - Google Patents

Coating method and coating apparatus Download PDF

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TW201347858A
TW201347858A TW102111290A TW102111290A TW201347858A TW 201347858 A TW201347858 A TW 201347858A TW 102111290 A TW102111290 A TW 102111290A TW 102111290 A TW102111290 A TW 102111290A TW 201347858 A TW201347858 A TW 201347858A
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Taiwan
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substrate
coating
nozzle
discharge port
shape
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TW102111290A
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Chinese (zh)
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Shigeo Fujimori
Seiichiro Murase
Satoshi Enzaki
Tetsuya Goto
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Toray Industries
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0254Coating heads with slot-shaped outlet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/027Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/26Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

This invention provides a coating method and a coating apparatus which corresponds to any coated pattern while maintaining high pattern coating precision originally provided by a slit coating method and a stripe coating method. The coating method includes: a bead forming process, discharging coating liquid from a discharging opening of a nozzle to form beads including the coating liquid between a substrate and the discharging opening; and a coating process, relatively moving the nozzle in regard to the substrate to coat the coating liquid on the substrate, wherein in the coating process, a coating end position of the coating liquid on the substrate is adjusted by changing a space between the discharging opening of the nozzle and the substrate.

Description

塗佈方法及塗佈裝置 Coating method and coating device

本發明是有關於一種塗佈方法及塗佈裝置,尤其關於對半導體基板塗佈材料的溶液的塗佈方法及塗佈裝置。 The present invention relates to a coating method and a coating apparatus, and more particularly to a coating method and a coating apparatus for a solution of a semiconductor substrate coating material.

作為太陽電池的結構,已知有一種背面接合型太陽電池,其於半導體基板的主面中的、與使太陽光入射的受光面為相反側的背面,形成有pn接面。背面接合型太陽電池中,於受光面上不存在電極,因此具有於原理上可期待高的轉換效率、且自受光面側觀察的設計性亦優異的特長,該背面接合型太陽電池業已開始實用化。 As a structure of a solar cell, a back surface bonding type solar cell in which a pn junction is formed on a back surface of a main surface of a semiconductor substrate opposite to a light receiving surface on which sunlight is incident is known. In the back-junction type solar cell, since the electrode does not exist on the light-receiving surface, it is expected to have high conversion efficiency in principle and excellent in designability from the light-receiving side. This back-junction type solar cell has begun to be practical. Chemical.

於背面接合型太陽電池中,n型區域及p型區域與對應於該些區域的保護膜或電極是僅集合於背面而形成圖案(pattern),因此要求高精度的圖案加工技術。對於此點,於專利文獻1中揭示有一種技術:對於成為圖案加工對象的薄膜,藉由條紋(stripe)塗佈法來直接進行圖案塗佈,藉此簡化背面接合型太陽電池的製造步驟。 In the back junction type solar cell, the n-type region and the p-type region and the protective film or electrode corresponding to the regions are formed only on the back surface to form a pattern, and therefore a pattern processing technique with high precision is required. In this regard, Patent Document 1 discloses a technique in which a film to be subjected to pattern processing is directly subjected to pattern coating by a stripe coating method, thereby simplifying the manufacturing process of the back surface bonding type solar cell.

所謂條紋塗佈法,是指如下所述的塗佈方法,即:一邊 使設有多個開口(噴出口)的塗佈噴嘴(nozzle)相對於基板而相對地移動,一邊自多個噴出口連續地噴出溶液,藉此來形成多個帶狀的圖案,上述開口(噴出口)噴出材料的溶液(糊劑(paste))。於條紋塗佈法中,塗佈噴嘴與基板不接觸,因此可避免在絲網(screen)印刷法(例如參照專利文獻2~專利文獻4)中擔憂的基板的破裂或劃痕、污染物的影響、位置精度的惡化。而且,根據專利文獻1所揭示的技術,自塗佈噴嘴朝下地噴出糊劑,因此即使在已先塗佈有某糊劑的狀態下,亦可對其他糊劑進行圖案塗佈。 The strip coating method refers to a coating method as described below, that is, one side A coating nozzle (nozzle) provided with a plurality of openings (discharge ports) is relatively moved with respect to the substrate, and a solution is continuously ejected from the plurality of ejection ports, thereby forming a plurality of strip-shaped patterns, and the openings ( Spray outlet) A solution (paste) of the material ejected. In the stripe coating method, since the coating nozzle is not in contact with the substrate, it is possible to avoid cracking or scratching of the substrate or contamination of the substrate which is worried in the screen printing method (for example, refer to Patent Document 2 to Patent Document 4). Deterioration of influence and positional accuracy. Further, according to the technique disclosed in Patent Document 1, since the paste is ejected downward from the coating nozzle, the other paste can be pattern-coated even in a state in which a certain paste is applied first.

進而,於條紋塗佈法中,是一邊連續噴出溶液一邊進行塗佈。因此,比起在間歇地噴出溶液的噴墨(ink jet)法(例如參照專利文獻4、專利文獻5)中,溶液形成圖27所示般的多個圓的結合圖案的情形,條紋塗佈法具有可對更高精度的條紋形狀進行圖案塗佈的優點。 Further, in the stripe coating method, the coating is performed while continuously discharging the solution. Therefore, in the case of the ink jet method in which the solution is intermittently ejected (for example, refer to Patent Document 4 and Patent Document 5), the solution forms a combination pattern of a plurality of circles as shown in FIG. The method has the advantage of being able to apply a pattern to a stripe shape with higher precision.

現有技術文獻 Prior art literature

專利文獻 Patent literature

專利文獻1:國際公開第2011/074467號 Patent Document 1: International Publication No. 2011/074467

專利文獻2:日本專利特開2008-186927號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2008-186927

專利文獻3:日本專利特開2010-205839號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2010-205839

專利文獻4:國際公開第2007/081510號 Patent Document 4: International Publication No. 2007/081510

專利文獻5:日本專利特開2004-221149號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2004-221149

專利文獻6:日本專利特開2001-269610號公報 Patent Document 6: Japanese Patent Laid-Open Publication No. 2001-269610

專利文獻7:日本專利特開2001-96213號公報 Patent Document 7: Japanese Patent Laid-Open Publication No. 2001-96213

然而,適合用於背面接合型太陽電池的單晶矽基板是自圓柱狀的鑄錠(ingot)切出,因此如圖28所示,半導體基板91a並非正方形,而是呈於四角存在切口部92的形狀。於先前的條紋塗佈法中,難以形成沿著該切口部92的塗佈形狀93a。而且,如圖29所示,即使對於正方形的基板91b,亦難以形成塗佈方向的長度不同的塗佈形狀93b。即,於先前的條紋塗佈法中,儘管對於例如長方形般、呈塗佈開始位置及塗佈結束位置的形狀與噴出口的排列平行的塗佈形狀的區域,可精度良好地進行塗佈,但對於除此以外的呈任意塗佈形狀的區域難以進行圖案塗佈,這成為課題。 However, a single crystal germanium substrate suitable for use in a back junction type solar cell is cut out from a cylindrical ingot. Therefore, as shown in FIG. 28, the semiconductor substrate 91a is not square but has a notched portion 92 at four corners. shape. In the previous stripe coating method, it is difficult to form the coating shape 93a along the slit portion 92. Further, as shown in FIG. 29, even in the case of the square substrate 91b, it is difficult to form the coating shape 93b having a different length in the coating direction. In other words, in the conventional stripe coating method, the coating shape of the shape in which the shape of the application start position and the application end position is parallel to the arrangement of the discharge ports, for example, in a rectangular shape, can be applied accurately. However, it is difficult to apply a pattern to a region having an arbitrary coating shape other than this, which is a problem.

亦已知有一種狹縫(slit)塗佈法,其不同於對糊劑進行圖案塗佈的條紋塗佈法,而是使用設有狹縫狀噴出口的塗佈噴嘴(塗佈頭(head))來整面塗佈糊劑。例如於專利文獻6中,作為將該狹縫塗佈法適用於圓形狀基板的技術,揭示有下述技術:在將圓形狀的基板嵌入具有凹狀的基板保持部的基板載台的狀態下,藉由塗佈頭而於基板載台的整個上表面塗佈糊劑。然而,該方法中,每當對基板塗佈糊劑時,難以完全去除附著於基板載台的糊劑。而且,擔心糊劑侵入基板與基板載台之間產生的間隙,或者暫時附著於基板載台的糊劑流入凹狀的基板保持部等,而導致糊劑附著於凹狀的基板保持部的底部,對下個基板的裝卸造成妨礙。 There is also known a slit coating method which is different from the strip coating method in which a paste is applied to a pattern, but uses a coating nozzle provided with a slit-like discharge port (coating head (head) )) Apply the paste to the entire surface. For example, in Patent Document 6, as a technique for applying the slit coating method to a circular-shaped substrate, a technique is disclosed in which a circular substrate is embedded in a substrate stage having a concave substrate holding portion. The paste is applied to the entire upper surface of the substrate stage by the coating head. However, in this method, it is difficult to completely remove the paste adhering to the substrate stage every time the paste is applied to the substrate. Further, there is a concern that the paste invades the gap between the substrate and the substrate stage, or the paste temporarily attached to the substrate stage flows into the concave substrate holding portion or the like, and the paste adheres to the bottom of the concave substrate holding portion. , hindering the loading and unloading of the next substrate.

而且,例如於專利文獻7中,揭示有下述技術:在使具 有可撓性的薄膜(film)狀的基板,吸附於試料台的上表面所形成的無端(endless)槽的狀態下,對試料台的整個上表面進行狹縫塗佈。然而,該方法中,必須使基板中途的區域沿著無端槽,因而只能使用如樹脂薄膜般富有柔軟性的基板。 Moreover, for example, in Patent Document 7, there is disclosed the following technique: A flexible film-like substrate is subjected to slit coating on the entire upper surface of the sample stage while being adsorbed on an endless groove formed on the upper surface of the sample stage. However, in this method, it is necessary to make the region in the middle of the substrate along the endless groove, and thus it is only possible to use a substrate which is flexible like a resin film.

進而,於使薄膜狀的基板吸附於無端槽來進行狹縫塗佈 的情況下,還存在如下問題。圖30A表示的是:在使薄膜基板96沿著基板載台94的無端槽95而吸附的狀態下,一邊自噴嘴97噴出塗液(糊劑)98,一邊開始塗佈的狀態。而且,圖30B是圖30A的A9-A9'剖面圖。再者,於圖30B中,省略了噴嘴97的內部結構的記載。 Further, the film-form substrate is adsorbed to the endless groove to perform slit coating In the case of the following, there are still the following problems. In the state in which the film substrate 96 is adsorbed along the endless groove 95 of the substrate stage 94, the coating liquid (paste) 98 is ejected from the nozzle 97, and the application is started. 30B is a cross-sectional view taken along line A9-A9' of FIG. 30A. In addition, in FIG. 30B, the description of the internal structure of the nozzle 97 is abbreviate|omitted.

圖31B是圖31A的A10-A10'剖面圖。再者,於圖31B 中,省略了噴嘴97的內部結構的記載。如圖31A所示,當噴嘴97臨近無端槽95時,如圖31B所示,糊劑98不會附著於薄膜基板96低於周圍的部分,但由於自噴嘴97的前端繼續噴出糊劑98,因此該部分的糊劑98的積留增大。 Figure 31B is a cross-sectional view taken along line A10-A10' of Figure 31A. Furthermore, in Figure 31B In the middle, the description of the internal structure of the nozzle 97 is omitted. As shown in Fig. 31A, when the nozzle 97 is adjacent to the endless groove 95, as shown in Fig. 31B, the paste 98 does not adhere to the portion of the film substrate 96 which is lower than the surrounding portion, but since the paste 98 is continuously ejected from the front end of the nozzle 97, Therefore, the accumulation of the paste 98 in this portion is increased.

圖32B是圖32A的A11-A11'剖面圖,圖33B是圖33A 的A12-A12'剖面圖。如圖32A所示,當在此狀態下噴嘴97臨近圓形的塗佈對象區域時,會在薄膜基板96的塗佈對象區域的端部形成糊劑過剩附著部99。其結果,如圖33A及圖33B所示,於圓形的塗佈對象區域的上游側形成糊劑過剩附著部99,因此該部分的膜厚將變厚。 Figure 32B is a cross-sectional view taken along line A11-A11' of Figure 32A, and Figure 33B is Figure 33A A12-A12' section view. As shown in FIG. 32A, when the nozzle 97 is adjacent to the circular application target region in this state, the paste excess adhesion portion 99 is formed at the end portion of the application target region of the film substrate 96. As a result, as shown in FIG. 33A and FIG. 33B, the paste excess adhesion portion 99 is formed on the upstream side of the circular application target region, and thus the film thickness of the portion is increased.

即使在將與此種狹縫塗佈同樣的原理適用於條紋塗佈 法的情況下,糊劑亦會過剩地附著於上游側,因此存在下述問題:不僅該部分的膜厚變厚,橫方向亦會展開,從而條紋寬度增大。 Even the same principle as this slit coating is applied to strip coating In the case of the method, the paste adheres excessively to the upstream side. Therefore, there is a problem in that not only the film thickness of the portion is increased, but also the lateral direction is developed, and the stripe width is increased.

本發明是鑒於上述問題而完成,其目的在於提供一種塗 佈方法及塗佈裝置,可在保持狹縫塗佈法或條紋塗佈法原本具備的高的圖案塗佈精度的狀態下,對應於任意的塗佈形狀。 The present invention has been made in view of the above problems, and an object thereof is to provide a coating The cloth method and the coating device can correspond to an arbitrary coating shape in a state in which high pattern coating precision originally provided by the slit coating method or the stripe coating method is maintained.

為了解決上述問題而達成目的,本發明的塗佈方法的特 徵在於包括:液珠形成步驟,自噴嘴的噴出口噴出塗液,於基板與上述噴出口之間形成包含上述塗液的液珠;以及塗佈步驟,使上述噴嘴相對於上述基板而相對移動,於上述基板上塗佈上述塗液,於上述塗佈步驟中,藉由改變上述噴嘴的噴出口與上述基板的間隔,從而調整上述基板上的上述塗液的塗佈結束位置。 In order to solve the above problems and achieve the object, the coating method of the present invention The method includes a liquid bead forming step of ejecting a coating liquid from a discharge port of a nozzle, forming a liquid bead including the coating liquid between the substrate and the ejection port, and a coating step of relatively moving the nozzle relative to the substrate The coating liquid is applied onto the substrate, and in the coating step, the application end position of the coating liquid on the substrate is adjusted by changing the interval between the discharge port of the nozzle and the substrate.

於上述塗佈方法中,上述噴嘴具有狹縫狀的噴出口,上 述塗佈步驟是自上述基板的一端朝向另一端,藉由具有上述狹縫狀的噴出口的噴嘴,來將上述塗液塗佈成寬幅的圖案,上述狹縫的形狀不同於上述塗佈結束位置的形狀。 In the above coating method, the nozzle has a slit-shaped discharge port, and In the coating step, the coating liquid is applied to a wide pattern from one end of the substrate toward the other end by a nozzle having the slit-shaped discharge port, and the shape of the slit is different from the coating described above. The shape of the end position.

於上述塗佈方法中,上述噴嘴具有分散排列的多個噴出 口,上述塗佈步驟是自上述基板的一端朝向另一端,藉由具有上述多個噴出口的噴嘴,來將上述塗液塗佈成條紋狀的圖案,上述多個噴出口的排列不同於上述塗佈結束位置的排列。 In the above coating method, the nozzle has a plurality of discharges arranged in a dispersed arrangement The coating step of applying the coating liquid into a stripe pattern by a nozzle having the plurality of ejection ports from one end of the substrate toward the other end, and the arrangement of the plurality of ejection ports is different from the above The arrangement of the coating end position.

於上述塗佈方法中,上述噴出口是呈沿著直線、曲線或 者至少於1處部位彎曲的線而設置的狹縫狀。 In the above coating method, the above-mentioned discharge port is along a straight line, a curve or A slit shape provided at least at a portion where the line is curved.

於上述塗佈方法中,上述多個噴出口是沿著直線、曲線 或者至少於1處部位彎曲的線而排列。 In the above coating method, the plurality of discharge ports are along a straight line and a curve Or arranged at least at a line where the portion is curved.

於上述塗佈方法中,上述塗佈步驟是對上述基板上的由 閉合線圍成的區域塗佈上述塗液,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,上述狹縫狀的噴出口是呈沿著上述區域中的上述塗液的塗佈開始位置的形狀。 In the above coating method, the coating step is performed on the substrate The coating liquid is applied to the region enclosed by the closing line, and the closed line includes a polygonal shape, a closed curve or a combination of a straight line and a curved line, and the slit-shaped discharge port is a coating start position along the coating liquid in the region. shape.

於上述塗佈方法中,上述塗佈步驟是對上述基板上的由 閉合線圍成的區域塗佈上述塗液,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,上述多個噴出口是沿著上述區域中的上述塗液的塗佈開始位置而排列。 In the above coating method, the coating step is performed on the substrate The coating liquid is applied to the region enclosed by the closing line, and the closing line includes a polygonal shape, a closed curve, or a combination of a straight line and a curved line, and the plurality of discharge ports are arranged along a coating start position of the coating liquid in the region.

於上述塗佈方法中,上述基板具有包含閉合線的外周形 狀,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,上述區域的外周形狀是呈沿著上述基板的外周形狀的形狀。 In the above coating method, the substrate has a peripheral shape including a closed line In the shape, the closed line includes a polygon, a closed curve, or a combination of a straight line and a curved line, and the outer peripheral shape of the region is a shape along an outer peripheral shape of the substrate.

於上述塗佈方法中,藉由使上述塗佈結束位置相對於上 述基板中的上述塗液的塗佈對象區域而下降,從而改變上述噴嘴的噴出口與上述基板的間隔。 In the above coating method, by making the above coating end position relative to the upper The application target region of the coating liquid in the substrate is lowered to change the interval between the discharge port of the nozzle and the substrate.

於上述塗佈方法中,藉由使上述基板的一部分自保持上 述基板的載台的端部突出,並對上述一部分施加朝下的力,從而使上述塗佈結束位置下降。 In the above coating method, by self-holding a part of the substrate The end portion of the stage of the substrate protrudes, and a downward force is applied to the portion to lower the coating end position.

於上述塗佈方法中,藉由對上述基板設置階差或者傾 斜,從而使上述塗佈結束位置下降。 In the above coating method, by setting a step or a tilt to the substrate It is inclined so that the above coating end position is lowered.

於上述塗佈方法中,藉由使上述噴嘴的至少一部分朝上 述噴嘴遠離上述基板的方向移動,從而改變上述噴嘴的噴出口與上述基板的間隔。 In the above coating method, by causing at least a portion of the nozzle to face upward The nozzle moves away from the substrate to change the interval between the discharge port of the nozzle and the substrate.

本發明的塗佈裝置的特徵在於包括:載台,保持基板; 噴嘴,自噴出口噴出塗液;使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動的單元;以及改變上述噴嘴的噴出口與上述基板的間隔的單元。 The coating apparatus of the present invention is characterized by comprising: a stage holding the substrate; a nozzle that ejects a coating liquid from a discharge port; a unit that relatively moves at least one of the substrate and the nozzle with respect to the other; and a unit that changes a distance between the ejection orifice of the nozzle and the substrate.

於上述塗佈裝置中,上述噴嘴具有狹縫狀的噴出口,藉 由使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動,從而自上述基板的一端朝向另一端,藉由具有上述狹縫狀的噴出口的噴嘴,來將上述塗液塗佈成寬幅的圖案,上述狹縫的形狀不同於上述塗佈結束位置的形狀。 In the above coating apparatus, the nozzle has a slit-shaped discharge port, By moving at least one of the substrate and the nozzle relative to the other, the coating liquid is applied from one end of the substrate toward the other end by a nozzle having the slit-shaped discharge port. It is applied in a wide pattern, and the shape of the slit is different from the shape of the coating end position described above.

於上述塗佈裝置中,上述噴嘴具有分散排列的多個噴出 口,藉由使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動,從而將上述塗液塗佈成條紋狀的圖案,上述多個噴出口的排列不同於上述塗佈結束位置的排列。 In the above coating apparatus, the nozzle has a plurality of discharges arranged in a dispersed arrangement The port is applied to the coating liquid in a stripe pattern by relatively moving at least one of the substrate and the nozzle relative to the other, and the arrangement of the plurality of ejection ports is different from the coating The arrangement of the end positions.

於上述塗佈裝置中,上述載台具有基板載置面,上述基 板載置面呈相對於上述噴嘴的噴出口為凸的非平面狀,改變上述噴嘴的噴出口與上述基板的間隔的單元是保持機構,上述保持機構相對於上述基板載置面來保持上述基板。 In the above coating apparatus, the stage has a substrate mounting surface, and the base The plate mounting surface is a non-planar shape that is convex with respect to the discharge port of the nozzle, and a means for changing a distance between the discharge port of the nozzle and the substrate is a holding mechanism, and the holding mechanism holds the substrate with respect to the substrate mounting surface. .

於上述塗佈裝置中,以上述基板的一部分自上述載台的 端部突出的方式,而將上述基板配置於上述載台,改變上述噴嘴的噴出口與上述基板的間隔的單元是保持機構,上述保持機構對 上述基板的突出部施加朝下的力,且將上述基板保持於上述載台。 In the above coating apparatus, a part of the substrate is from the stage a unit in which the end portion protrudes, wherein the substrate is disposed on the stage, and a unit that changes a distance between the discharge port of the nozzle and the substrate is a holding mechanism, and the holding mechanism is The protruding portion of the substrate applies a downward force, and the substrate is held by the stage.

於上述塗佈裝置中,改變上述噴嘴的噴出口與上述基板的間隔的單元是使上述噴嘴的至少一部分朝上述噴嘴遠離上述基板的方向移動的機構。 In the above coating apparatus, the means for changing the distance between the discharge port of the nozzle and the substrate is a mechanism for moving at least a part of the nozzle toward the nozzle away from the substrate.

於上述塗佈裝置中,上述狹縫狀的噴出口是呈沿著直線、曲線或者至少於1處部位彎曲的線而設置的狹縫狀。 In the above coating apparatus, the slit-shaped discharge port is formed in a slit shape along a straight line, a curved line, or a line bent at at least one portion.

於上述塗佈裝置中,上述多個噴出口是沿著直線、曲線或者至少於1處部位彎曲的線而排列。 In the above coating apparatus, the plurality of discharge ports are arranged along a straight line, a curved line, or a line bent at at least one portion.

根據本發明,藉由改變噴嘴的噴出口與基板的間隔,從而調整塗液的塗佈結束位置,因此即使對於呈任意塗佈形狀的區域,亦可在保持狹縫塗佈法或條紋塗佈法原本具備的圖案塗佈精度的狀態下,高精度地進行塗液的塗佈。 According to the present invention, since the application end position of the coating liquid is adjusted by changing the interval between the discharge port of the nozzle and the substrate, even in the case of the region having an arbitrary coating shape, the slit coating method or the strip coating can be maintained. The coating liquid is applied with high precision in a state in which the pattern coating accuracy is originally provided.

10‧‧‧背面接合型太陽電池 10‧‧‧Back junction solar cells

11、11a~11g、11d'、91b‧‧‧基板 11, 11a~11g, 11d', 91b‧‧‧ substrate

12‧‧‧n型區域 12‧‧‧n type area

13‧‧‧p型區域 13‧‧‧p-type area

14、15‧‧‧保護膜 14, 15‧ ‧ protective film

15a‧‧‧開口 15a‧‧‧ Opening

16‧‧‧n型接觸電極(電極) 16‧‧‧n type contact electrode (electrode)

17‧‧‧p型接觸電極(電極) 17‧‧‧p type contact electrode (electrode)

18、92‧‧‧切口部 18, 92‧‧‧cut section

19、19'‧‧‧塗佈對象區域 19, 19'‧‧‧ Coating area

21、21'‧‧‧擴散遮罩 21, 21'‧‧‧ diffuse mask

24‧‧‧n型固相擴散源 24‧‧‧n type solid phase diffusion source

25‧‧‧p型固相擴散源 25‧‧‧p-type solid phase diffusion source

26‧‧‧增大部 26‧‧‧Increase

31、31a~31h‧‧‧載台 31, 31a~31h‧‧‧

34、34a~34d、34g~34i、97‧‧‧噴嘴 34, 34a~34d, 34g~34i, 97‧‧‧ nozzle

34g(C)‧‧‧中央噴嘴部 34g (C) ‧ ‧ central nozzle section

34g(L)‧‧‧左噴嘴部 34g (L) ‧ ‧ left nozzle

34g(R)‧‧‧右噴嘴部 34g (R) ‧ ‧ right nozzle

35、98‧‧‧塗液(糊劑) 35, 98‧ ‧ coating liquid (paste)

37、38、38(C)、38(L)、38(R)‧‧‧噴出口 37, 38, 38 (C), 38 (L), 38 (R) ‧ ‧ spout

38a、38b、38c‧‧‧狹縫 38a, 38b, 38c‧‧ slit

39‧‧‧彎曲點 39‧‧‧Bend points

40‧‧‧塗佈裝置 40‧‧‧ Coating device

41‧‧‧直線驅動裝置(X方向) 41‧‧‧Linear drive (X direction)

42‧‧‧直線驅動裝置(Y方向) 42‧‧‧Linear drive (Y direction)

43、53‧‧‧托架 43, 53‧‧‧ bracket

44‧‧‧CCD相機 44‧‧‧CCD camera

45‧‧‧感測器 45‧‧‧Sensor

46‧‧‧塗液 46‧‧‧coating solution

47‧‧‧液珠 47‧‧‧Liquid beads

48‧‧‧加壓口 48‧‧‧pressure port

49‧‧‧塗液供給口 49‧‧‧ coating liquid supply port

52‧‧‧直線驅動裝置(Z方向) 52‧‧‧Linear drive (Z direction)

54‧‧‧伺服馬達 54‧‧‧Servo motor

91a‧‧‧半導體基板 91a‧‧‧Semiconductor substrate

93a、93b‧‧‧塗佈形狀 93a, 93b‧‧‧ coated shape

94‧‧‧基板載台 94‧‧‧Substrate stage

95‧‧‧無端槽 95‧‧‧ Endless slot

96‧‧‧薄膜基板 96‧‧‧film substrate

99‧‧‧糊劑過剩附著部 99‧‧‧Paste excess attachment

100‧‧‧階差 100‧‧ ‧ step

101‧‧‧傾斜部 101‧‧‧ inclined section

C1、C2、C2'‧‧‧一點鏈線 C1, C2, C2'‧‧‧ a little chain line

F‧‧‧力 F‧‧‧ force

LC‧‧‧間隔 LC‧‧‧ interval

P、Q‧‧‧塗佈結束位置 P, Q‧‧‧ coating end position

X、Y、Z、θ‧‧‧方向 X, Y, Z, θ‧‧‧ directions

圖1是表示於本發明的實施方式的塗佈方法中,使基板與噴嘴的噴出口之間形成有液珠的狀態的剖面圖。 FIG. 1 is a cross-sectional view showing a state in which a liquid bead is formed between a substrate and a discharge port of a nozzle in the coating method according to the embodiment of the present invention.

圖2是表示於本發明的實施方式的塗佈方法中,基板與噴嘴的噴出口之間的液珠中斷的狀態的剖面圖。 2 is a cross-sectional view showing a state in which a liquid bead between a substrate and a discharge port of a nozzle is interrupted in the coating method according to the embodiment of the present invention.

圖3A是對本發明的實施方式1的塗佈方法的一例進行說明的圖。 3A is a view for explaining an example of a coating method according to Embodiment 1 of the present invention.

圖3B是圖3A所示的噴嘴移動至兩點鏈線A1-A1'的位置的狀態下的A1-A1'剖面圖。 Fig. 3B is a cross-sectional view taken along the line A1-A1' in a state where the nozzle shown in Fig. 3A is moved to the position of the two-dot chain line A1-A1'.

圖3C是圖3A所示的噴嘴移動至兩點鏈線A1-A1'的位置的狀態下的B1-B1'剖面圖。 Fig. 3C is a cross-sectional view taken along the line B1-B1' in a state where the nozzle shown in Fig. 3A is moved to the position of the two-dot chain line A1-A1'.

圖4A是對本發明的實施方式2的塗佈方法的一例進行說明的圖。 FIG. 4A is a view for explaining an example of a coating method according to Embodiment 2 of the present invention.

圖4B是圖4A所示的噴嘴移動至兩點鏈線A2-A2'的位置的狀態下的A2-A2'剖面圖。 4B is a cross-sectional view taken along the line A2-A2' in a state where the nozzle shown in FIG. 4A is moved to the position of the two-dot chain line A2-A2'.

圖4C是圖4A所示的噴嘴移動至兩點鏈線A2-A2'的位置的狀態下的B2-B2'剖面圖。 4C is a cross-sectional view taken along the line B2-B2' in a state where the nozzle shown in FIG. 4A is moved to the position of the two-dot chain line A2-A2'.

圖5A是對本發明的實施方式3的塗佈方法的一例進行說明的圖,表示塗佈開始時刻的基板及噴嘴的平面圖。 FIG. 5A is a view for explaining an example of a coating method according to Embodiment 3 of the present invention, and is a plan view showing a substrate and a nozzle at the application start timing.

圖5B是圖5A的A3-A3'剖面圖。 Fig. 5B is a cross-sectional view taken along line A3-A3' of Fig. 5A.

圖6A是對本發明的實施方式3的塗佈方法的一例進行說明的圖,表示於基板的中間結束塗佈的時刻的基板及噴嘴的平面圖。 FIG. 6A is a view for explaining an example of a coating method according to Embodiment 3 of the present invention, and shows a plan view of a substrate and a nozzle at the time of ending the application in the middle of the substrate.

圖6B是圖6A的A4-A4'剖面圖。 Fig. 6B is a cross-sectional view taken along line A4-A4' of Fig. 6A.

圖7A是對本發明的實施方式4的塗佈方法的一例進行說明的圖。 FIG. 7A is a view for explaining an example of a coating method according to Embodiment 4 of the present invention.

圖7B是圖7A所示的噴嘴移動至兩點鏈線A5-A5'的位置的狀態下的A5-A5'剖面圖。 Fig. 7B is a cross-sectional view taken along the line A5-A5' in a state where the nozzle shown in Fig. 7A is moved to the position of the two-dot chain line A5-A5'.

圖7C是圖7A所示的噴嘴移動至兩點鏈線A5-A5'的位置的狀態下的B5-B5'剖面圖。 Fig. 7C is a cross-sectional view taken along the line B5-B5' in a state where the nozzle shown in Fig. 7A is moved to the position of the two-dot chain line A5-A5'.

圖8A是對本發明的實施方式4的塗佈方法的另一例進行說明的圖。 FIG. 8A is a view for explaining another example of the coating method according to Embodiment 4 of the present invention.

圖8B是對本發明的實施方式4的塗佈方法的另一例進行說明的圖。 FIG. 8B is a view for explaining another example of the coating method according to Embodiment 4 of the present invention.

圖9是對本發明的實施方式1及實施方式2的塗佈方法的變形例1進行說明的圖。 FIG. 9 is a view for explaining a first modification of the coating method according to the first embodiment and the second embodiment of the present invention.

圖10是對本發明的實施方式1及實施方式2的塗佈方法的變形例1進行說明的圖。 FIG. 10 is a view for explaining a first modification of the coating method according to the first embodiment and the second embodiment of the present invention.

圖11A是對本發明的實施方式3的塗佈方法的變形例2進行說明的俯視圖。 FIG. 11A is a plan view illustrating a second modification of the coating method according to the third embodiment of the present invention.

圖11B是對本發明的實施方式3的塗佈方法的變形例2進行說明的正面圖。 FIG. 11B is a front view for explaining a second modification of the coating method according to the third embodiment of the present invention.

圖12A是表示在圖11A所示的基板的中間結束塗佈的狀態的俯視圖。 FIG. 12A is a plan view showing a state in which coating is completed in the middle of the substrate shown in FIG. 11A.

圖12B是表示在圖11A所示的基板的中間結束塗佈的狀態的正面圖。 Fig. 12B is a front elevational view showing a state in which coating is completed in the middle of the substrate shown in Fig. 11A.

圖13A是對將本發明的實施方式1的塗佈方法適用於狹縫塗佈法的例子進行說明的平面圖。 FIG. 13A is a plan view illustrating an example in which the coating method according to Embodiment 1 of the present invention is applied to a slit coating method.

圖13B是圖13A所示的噴嘴移動至兩點鏈線A6-A6'的位置的狀態下的A6-A6'剖面圖。 Fig. 13B is a cross-sectional view taken along the line A6-A6' in a state where the nozzle shown in Fig. 13A is moved to the position of the two-dot chain line A6-A6'.

圖13C是圖13A所示的噴嘴移動至兩點鏈線A6-A6'的位置的狀態下的B6-B6'剖面圖。 Fig. 13C is a cross-sectional view taken along the line B6-B6' in a state where the nozzle shown in Fig. 13A is moved to the position of the two-dot chain line A6-A6'.

圖14A是對將本發明的實施方式2的塗佈方法適用於狹縫塗佈法的例子進行說明的平面圖。 FIG. 14A is a plan view illustrating an example in which the coating method according to Embodiment 2 of the present invention is applied to a slit coating method.

圖14B是圖14A所示的噴嘴移動至兩點鏈線A7-A7'的位置的狀態下的A7-A7'剖面圖。 Fig. 14B is a cross-sectional view taken along the line A7-A7' in a state where the nozzle shown in Fig. 14A is moved to the position of the two-dot chain line A7-A7'.

圖14C是圖14A所示的噴嘴移動至兩點鏈線A7-A7'的位置的狀態下的B7-B7'剖面圖。 Fig. 14C is a cross-sectional view taken along the line B7-B7' in a state where the nozzle shown in Fig. 14A is moved to the position of the two-dot chain line A7-A7'.

圖15A是表示狹縫狀的噴出口的變形例的平面圖。 Fig. 15A is a plan view showing a modification of the slit-shaped discharge port.

圖15B是表示狹縫狀的噴出口的變形例的平面圖。 Fig. 15B is a plan view showing a modification of the slit-shaped discharge port.

圖15C是表示狹縫狀的噴出口的變形例的平面圖。 Fig. 15C is a plan view showing a modification of the slit-shaped discharge port.

圖16是表示可用於各實施方式1~實施方式4的塗佈方法的塗佈裝置的一例的立體圖。 FIG. 16 is a perspective view showing an example of a coating device that can be used in the coating methods of the first to fourth embodiments.

圖17是表示背面接合型太陽電池的典型結構的剖面圖。 Fig. 17 is a cross-sectional view showing a typical structure of a back junction type solar cell.

圖18是自背面觀察圖17所示的背面接合型太陽電池的平面圖。 Fig. 18 is a plan view of the back surface bonding type solar cell shown in Fig. 17 as seen from the back.

圖19A是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 FIG. 19A is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19B是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19B is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19C是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19C is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19D是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19D is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19E是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19E is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19F是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19F is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19G是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19G is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖19H是對圖17所示的背面接合型太陽電池的製造方法的一例進行說明的剖面圖。 19H is a cross-sectional view for explaining an example of a method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖20A是對圖17所示的背面接合型太陽電池的製造方法的變形例進行說明的剖面圖。 FIG. 20A is a cross-sectional view for explaining a modification of the method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖20B是對圖17所示的背面接合型太陽電池的製造方法的變形例進行說明的剖面圖。 FIG. 20B is a cross-sectional view for explaining a modification of the method of manufacturing the back surface bonding type solar cell shown in FIG. 17.

圖21A是對在圖19A~圖19H所示的背面接合型電池的製造方法中,適用本發明的實施方式1~實施方式4的塗佈方法的例子進行說明的平面圖。 FIG. 21A is a plan view illustrating an example of a coating method according to Embodiments 1 to 4 of the present invention in the method of manufacturing the back-bonding type battery shown in FIGS. 19A to 19H.

圖21B是對在圖19A~圖19H所示的背面接合型電池的製造方法中,適用本發明的實施方式1~實施方式4的塗佈方法的例子進行說明的平面圖。 FIG. 21B is a plan view illustrating an example of a coating method according to Embodiments 1 to 4 of the present invention in the method of manufacturing the back-bonding type battery shown in FIGS. 19A to 19H.

圖21C是對在圖19A~圖19H所示的背面接合型電池的製造方法中,適用本發明的實施方式1~實施方式4的塗佈方法的例子進行說明的平面圖。 FIG. 21C is a plan view illustrating an example of a coating method according to Embodiments 1 to 4 of the present invention in the method of manufacturing the back-bonding type battery shown in FIGS. 19A to 19H.

圖21D是對在圖19A~圖19H所示的背面接合型電池的製造方法中,適用本發明的實施方式1~實施方式4的塗佈方法的例子進行說明的平面圖。 FIG. 21D is a plan view for explaining an example of a coating method according to Embodiments 1 to 4 of the present invention in the method of manufacturing the back-bonding type battery shown in FIGS. 19A to 19H.

圖22是對比較例1中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 22 is a plan view for explaining a method of applying a dopant paste in Comparative Example 1.

圖23是對比較例2中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 23 is a plan view for explaining a method of applying a dopant paste in Comparative Example 2.

圖24是對比較例3中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 24 is a plan view for explaining a method of applying a dopant paste in Comparative Example 3.

圖25A是對本發明的實施例2中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 25A is a plan view for explaining a method of applying a dopant paste in Example 2 of the present invention.

圖25B是對本發明的實施例2中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 25B is a plan view for explaining a method of applying a dopant paste in Example 2 of the present invention.

圖25C是對本發明的實施例2中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 25C is a plan view for explaining a method of applying a dopant paste in Example 2 of the present invention.

圖25D是示意性表示於本發明的實施例2中形成於基板上的n型固相擴散源及p型固相擴散源的平面圖。 Fig. 25D is a plan view schematically showing an n-type solid phase diffusion source and a p-type solid phase diffusion source formed on a substrate in the second embodiment of the present invention.

圖26A是對本發明的實施例3中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 26A is a plan view for explaining a method of applying a dopant paste in Example 3 of the present invention.

圖26B是對本發明的實施例3中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 26B is a plan view for explaining a method of applying a dopant paste in Example 3 of the present invention.

圖26C是對本發明的實施例3中的摻雜糊劑的塗佈方法進行說明的平面圖。 Fig. 26C is a plan view for explaining a method of applying a dopant paste in Example 3 of the present invention.

圖26D是示意性表示於本發明的實施例3中形成於基板上的n型固相擴散源及p型固相擴散源的平面圖。 Fig. 26D is a plan view schematically showing an n-type solid phase diffusion source and a p-type solid phase diffusion source formed on a substrate in the third embodiment of the present invention.

圖27是表示於先前的條紋塗佈法中形成的溶液的結合圖案的示意圖。 Fig. 27 is a schematic view showing a bonding pattern of a solution formed in the prior stripe coating method.

圖28是表示沿著基板的切口部的塗佈形狀的一例的平面圖。 28 is a plan view showing an example of a coating shape along a notch portion of a substrate.

圖29是表示形成於正方形基板上的長方形以外的塗佈形狀的一例的平面圖。 29 is a plan view showing an example of a coating shape other than a rectangle formed on a square substrate.

圖30A是對藉由先前的狹縫塗佈法而塗佈成圓形形狀的方法的一例進行說明的平面圖。 FIG. 30A is a plan view illustrating an example of a method of applying a circular shape by a slit coating method.

圖30B是圖30A的A9-A9'剖面圖。 Figure 30B is a cross-sectional view taken along line A9-A9' of Figure 30A.

圖31A是表示於先前的狹縫塗佈法中,噴嘴臨近無端槽的狀態的平面圖。 Fig. 31A is a plan view showing a state in which the nozzle is adjacent to the endless groove in the prior slit coating method.

圖31B是圖31A的A10-A10'剖面圖。 Figure 31B is a cross-sectional view taken along line A10-A10' of Figure 31A.

圖32A是表示於先前的狹縫塗佈法中,於薄膜基板的塗佈對象區域的端部形成有糊劑過剩附著部的狀態的平面圖。 FIG. 32A is a plan view showing a state in which a paste excess adhesion portion is formed at an end portion of a coating target region of a film substrate in the prior slit coating method.

圖32B是圖32A的A11-A11'剖面圖。 Figure 32B is a cross-sectional view taken along line A11-A11' of Figure 32A.

圖33A是表示於先前的狹縫塗佈法中,於薄膜基板的塗佈對象區域的上游側形成有糊劑過剩附著部的狀態的平面圖。 FIG. 33A is a plan view showing a state in which a paste excess adhesion portion is formed on the upstream side of the application target region of the film substrate in the previous slit coating method.

圖33B是圖33A的A12-A12'剖面圖。 Figure 33B is a cross-sectional view taken along line A12-A12' of Figure 33A.

以下,基於附圖詳細說明本發明的塗佈方法及塗佈裝置的實施方式。再者,本發明並不受該些實施方式限定。 Hereinafter, embodiments of the coating method and coating apparatus of the present invention will be described in detail based on the drawings. Furthermore, the invention is not limited by the embodiments.

首先,對本發明的各實施方式的塗佈方法中所含的步驟進行說明。 First, the steps included in the coating method of each embodiment of the present invention will be described.

(液珠形成步驟) (Bead formation step)

液珠形成步驟是自噴嘴的噴出口噴出塗液,於基板與噴出口之間形成包含塗液的液珠。再者,所謂液珠,被定義為連續地填滿噴出口與作為被塗佈面的基板表面之間的間隙的積液。 In the bead formation step, the coating liquid is ejected from the ejection port of the nozzle, and a liquid bead containing the coating liquid is formed between the substrate and the ejection port. In addition, the liquid bead is defined as a liquid that continuously fills a gap between the discharge port and the surface of the substrate as the coated surface.

圖1及圖2是用於對本發明的各實施方式的塗佈方法進行說明的示意圖。如圖1所示,於形成塗液的圖案的基板11的上方,排列有對該基板11噴出塗液的噴嘴34。於噴嘴34的內部,填充有自塗液供給口49供給的塗液46。當使噴嘴34與基板11相向,並自噴嘴34的加壓口48對噴嘴34的內部進行加壓時,自噴出口37擠出塗液46。此時,於噴嘴34的前端與基板11的上表面(塗佈面)的間隔LC小於規定長度的情況下,於噴嘴34與基板11之間形成液珠47。 1 and 2 are schematic views for explaining a coating method according to each embodiment of the present invention. As shown in FIG. 1, a nozzle 34 that ejects a coating liquid onto the substrate 11 is arranged above the substrate 11 on which the pattern of the coating liquid is formed. Inside the nozzle 34, the coating liquid 46 supplied from the coating liquid supply port 49 is filled. When the nozzle 34 is opposed to the substrate 11 and the inside of the nozzle 34 is pressurized from the pressurizing port 48 of the nozzle 34, the coating liquid 46 is extruded from the discharge port 37. At this time, when the distance LC between the tip end of the nozzle 34 and the upper surface (coated surface) of the substrate 11 is smaller than a predetermined length, the liquid droplet 47 is formed between the nozzle 34 and the substrate 11.

(塗佈步驟) (coating step)

塗佈步驟是使噴嘴相對於基板相對移動,於基板上塗佈上述塗液。如圖1所示,在使基板11與噴嘴34的噴出口37之間形成有液珠47的狀態下,使噴嘴34與基板11相對移動,從而可進行塗佈。此時,既可使基板11靜止而僅使噴嘴34移動,亦可相反地使噴嘴34靜止而僅使基板11移動。而且,還可使基板11與噴嘴34這兩者移動。再者,要使基板11移動,只要使保持基板11的載台(圖1中未圖示)移動即可。 The coating step is to relatively move the nozzle relative to the substrate, and apply the coating liquid on the substrate. As shown in FIG. 1, in a state in which the liquid droplets 47 are formed between the substrate 11 and the discharge port 37 of the nozzle 34, the nozzle 34 and the substrate 11 are relatively moved to be coated. At this time, the substrate 11 can be stopped and only the nozzle 34 can be moved, or the nozzle 34 can be stopped at the same time to move only the substrate 11. Moreover, both the substrate 11 and the nozzle 34 can be moved. Further, in order to move the substrate 11, it is only necessary to move the stage (not shown in FIG. 1) holding the substrate 11.

(塗佈結束位置的調整) (Adjustment of coating end position)

於上述塗佈步驟中,藉由於塗佈過程中改變噴嘴的噴出口與 基板的間隔,從而進行基板上的塗佈結束位置的調整。即,如圖2所示,若加寬噴出口37與基板11的間隔LC,將不再形成液珠47。因此,藉由一邊塗佈塗液46一邊改變間隔LC,並於塗液46的塗佈結束位置處將該間隔LC加寬至不再形成液珠47的距離,從而可使塗佈結束。根據本方法,無須改變來自加壓口48的加壓量,只要簡單地調整間隔LC,便可調整塗佈的結束位置。 In the above coating step, by changing the discharge port of the nozzle during the coating process The interval between the substrates is adjusted to adjust the coating end position on the substrate. That is, as shown in FIG. 2, if the gap LC between the discharge port 37 and the substrate 11 is widened, the liquid droplet 47 will not be formed. Therefore, the coating is finished by changing the interval LC while applying the coating liquid 46, and widening the interval LC to a distance at which the liquid droplets 47 are no longer formed at the coating end position of the coating liquid 46. According to the method, it is not necessary to change the amount of pressurization from the pressurizing port 48, and the end position of the coating can be adjusted by simply adjusting the interval LC.

作為用於在塗佈過程中改變間隔LC並於塗液46的塗佈結束位置處加寬至不再形成液珠47的距離的具體方法,可列舉下述方法:將基板保持於載台時,以呈朝向噴嘴為凸的非平面的方式保持於基板,或者對載台設置傾斜,或者朝向噴嘴的行進方向設置傾斜,或者對基板設置階差或傾斜等,從而使其他區域與噴出口37的距離大於基板內的塗佈對象區域與噴出口37的距離。或者,亦可列舉下述等方法,即:將基板的高度保持固定,而使噴嘴朝遠離基板的方向移動。對於該些更具體的方法,於以下的各實施方式中更詳細地進行說明。 As a specific method for changing the interval LC during the coating process and widening at the coating end position of the coating liquid 46 to a distance at which the liquid bead 47 is no longer formed, the following method may be mentioned: when the substrate is held on the stage The substrate is held in a non-planar manner that is convex toward the nozzle, or the stage is tilted, or tilted toward the traveling direction of the nozzle, or a step or inclination is set on the substrate, so that other regions and the discharge port 37 are provided. The distance is larger than the distance between the coating target region in the substrate and the discharge port 37. Alternatively, a method in which the height of the substrate is kept constant and the nozzle is moved away from the substrate may be mentioned. These more specific methods are described in more detail in the following embodiments.

繼而,對本發明的實施方式的塗佈方法進行詳細說明。 Next, the coating method of the embodiment of the present invention will be described in detail.

(實施方式1) (Embodiment 1)

使用圖3A~圖3C來說明本發明的實施方式1的塗佈方法。 A coating method according to Embodiment 1 of the present invention will be described with reference to Figs. 3A to 3C.

實施方式1的塗佈方法是利用具有分散排列的多個噴出口的噴嘴,於大致矩形的基板上,對外周形狀呈三角形的區域(塗佈對象區域)塗佈條紋狀的圖案。圖3A是表示塗佈開始時刻的基板11a及噴嘴34a的平面圖。而且,圖3B是圖3A所示的噴嘴34a 移動至兩點鏈線A1-A1'的位置的狀態下的A1-A1'剖面圖,圖3C是該狀態下的B1-B1'剖面圖。再者,於圖3A中,以實線表示糊劑35的塗佈對象區域19。而且,於圖3B及圖3C中,省略了噴嘴34a的內部結構的記載。 In the coating method of the first embodiment, a nozzle having a plurality of discharge ports arranged in a distributed manner is used, and a stripe-shaped pattern is applied to a substantially rectangular substrate on a substantially triangular shape (application target region). Fig. 3A is a plan view showing the substrate 11a and the nozzle 34a at the application start timing. Moreover, FIG. 3B is the nozzle 34a shown in FIG. 3A. A1-A1' cross-sectional view in a state of moving to the position of the two-dot chain line A1-A1', and FIG. 3C is a cross-sectional view taken along the line B1-B1' in this state. In addition, in FIG. 3A, the application target region 19 of the paste 35 is indicated by a solid line. Further, in FIGS. 3B and 3C, the description of the internal structure of the nozzle 34a is omitted.

載台31a是保持基板11a的保持單元,具有:基板載置 面,呈朝向噴嘴34a的噴出口37為凸的非平面狀;以及保持機構,於該基板載置面上藉由真空吸附來保持上述基板11a。詳細而言,於圖3A的平面圖中,以自載台31a的右上畫向左下的一點鏈線C1為界,該一點鏈線G1左側區域的厚度為固定,該一點鏈線C1右側區域的厚度越朝向右下方向則越薄。因此,被保持於此處的基板11a亦追隨地於一點鏈線C1處彎曲,以該一點鏈線C1為界,基板11a的上表面朝向右下的端部傾斜,與噴出口37的距離變大。如此,基板11a是呈朝向噴嘴34a為凸的非平面狀地由載台31a予以保持。即,對載台31a所設的傾斜及保持機構,相當於改變噴嘴34a的噴出口37與基板11a的間隔的手段。 The stage 31a is a holding unit that holds the substrate 11a, and has a substrate mounted thereon. The surface is a non-planar shape in which the discharge port 37 toward the nozzle 34a is convex, and a holding mechanism for holding the substrate 11a by vacuum suction on the substrate mounting surface. Specifically, in the plan view of FIG. 3A, the thickness of the left side region of the one-point chain line G1 is fixed by the point line C1 drawn from the upper right of the loading table 31a to the lower left, and the thickness of the right side region of the one-point chain line C1. The thinner the direction is toward the lower right. Therefore, the substrate 11a held here is also bent along the one-point chain line C1, and the upper surface of the substrate 11a is inclined toward the lower right end portion, and the distance from the discharge port 37 is changed. Big. In this manner, the substrate 11a is held by the stage 31a in a non-planar shape that is convex toward the nozzle 34a. That is, the tilting and holding mechanism provided to the stage 31a corresponds to means for changing the interval between the discharge port 37 of the nozzle 34a and the substrate 11a.

再者,本案中,所謂非平面或者非平面狀,是指基板11a 整體不處於一個平面內。因此,圖3A所示的自一點鏈線C1朝向右下方向的傾斜無論是平面性的還是曲面性的皆可。此點於其他實施方式中亦通用。 Furthermore, in the present case, the term "non-planar or non-planar" means the substrate 11a. The whole is not in a plane. Therefore, the inclination from the one-point chain line C1 toward the lower right direction shown in FIG. 3A can be either planar or curved. This point is also common in other embodiments.

於實施方式1中,基板11a只要是可追隨於載台31a而 呈非平面地彎曲的基板,則無論材質或厚度如何皆可使用。 In the first embodiment, the substrate 11a can follow the stage 31a. A non-planarly curved substrate can be used regardless of material or thickness.

噴嘴34a具有排列在大致一直線上的多個噴出口37。而 且,於噴嘴34a上,設有驅動機構,該驅動機構使噴嘴34a朝與多個噴出口37的排列方向不同的方向(例如與該排列方向大致正交的方向)移動。再者,相對於糊劑35的噴出方向的正交面上的、各噴出口37的剖面形狀既可如圖3A所示般為圓形狀,亦可為三角形、四邊形、五邊形以上的多邊形、橢圓、一部分具有曲面部的形狀等,可不受特別限定地使用。 The nozzle 34a has a plurality of discharge ports 37 arranged in a substantially straight line. and Further, the nozzle 34a is provided with a drive mechanism that moves the nozzle 34a in a direction different from the direction in which the plurality of discharge ports 37 are arranged (for example, a direction substantially orthogonal to the arrangement direction). Further, the cross-sectional shape of each of the discharge ports 37 on the orthogonal surface in the discharge direction of the paste 35 may be a circular shape as shown in FIG. 3A, or may be a polygon of a triangle, a quadrangle or a pentagon or more. The ellipse and a part of the elliptical shape have a shape of a curved surface portion, and the like can be used without particular limitation.

在此狀態下,自於噴嘴34a上排列在大致一直線上的多 個噴出口37噴出塗液35(以下,亦有時稱作糊劑35),於基板11a與噴出口37之間形成液珠47(參照圖1),並使噴嘴34a相對於基板11而相對移動。藉此,於基板11a上呈條紋狀地塗佈糊劑35。 於該塗佈時,隨著噴嘴34a朝下游(圖3A的下方)移動,因載台31a及基板11a上所設的傾斜,自基板11a的右側開始,噴出口37與基板11a的間隔逐漸變寬。藉此,自噴出口37與基板11a的間隔LC(參照圖1)達到規定長度以上的噴出口37依序(自圖3A的右側依序)中斷液珠47,結束該噴出口37對糊劑35的塗佈。 如此,可控制基板11a上的糊劑35的塗佈結束位置P。 In this state, since the nozzles 34a are arranged on a substantially straight line The discharge port 37 ejects the coating liquid 35 (hereinafter sometimes referred to as the paste 35), and a liquid bead 47 is formed between the substrate 11a and the discharge port 37 (see FIG. 1), and the nozzle 34a is opposed to the substrate 11 mobile. Thereby, the paste 35 is applied to the substrate 11a in a stripe shape. At the time of the application, as the nozzle 34a moves downstream (downward in FIG. 3A), the interval between the discharge port 37 and the substrate 11a gradually changes from the right side of the substrate 11a due to the inclination provided on the stage 31a and the substrate 11a. width. As a result, the discharge port 37 having a predetermined length or more from the gap LC (see FIG. 1) of the discharge port 37 and the substrate 11a is sequentially interrupted (from the right side of FIG. 3A), and the liquid droplet 47 is interrupted, and the discharge port 37 is terminated to the paste 35. Coating. In this manner, the application end position P of the paste 35 on the substrate 11a can be controlled.

於實施方式1中,多個噴出口37是排列在與噴嘴34a 的移動方向正交的直線上,與此不同的是,糊劑35的塗佈結束位置P是沿著一點鏈線C1而排列在相對於噴嘴34a的移動方向為傾斜的直線上。其結果,糊劑35的最終塗佈形狀的外周形狀呈三角形。 In Embodiment 1, a plurality of discharge ports 37 are arranged in alignment with the nozzle 34a. Unlike the straight line in which the moving direction is orthogonal, the application end position P of the paste 35 is arranged on a straight line which is inclined with respect to the moving direction of the nozzle 34a along the one-point chain line C1. As a result, the outer peripheral shape of the final coating shape of the paste 35 is triangular.

再者,於實施方式1中,藉由於噴嘴34a上設置驅動機 構,來使噴嘴34a移動,從而使噴嘴34a相對於基板11a相對移動,但亦可藉由使載置基板11a的載台31a移動,從而實現該相對移動。 Furthermore, in Embodiment 1, the drive machine is provided by the nozzle 34a. The nozzle 34a is moved to move the nozzle 34a relative to the substrate 11a, but the relative movement can be realized by moving the stage 31a on which the substrate 11a is placed.

(實施方式2) (Embodiment 2)

使用圖4A~圖4C來說明本發明的實施方式2的塗佈方法。實施方式2的塗佈方法是利用具有分散排列的多個噴出口且其排列並非一直線狀的噴嘴,於在大致正方形的四角設有切口部18的基板上,對呈大致沿著該基板外周形狀的形狀的區域(塗佈對象區域),塗佈條紋狀的圖案。圖4A是表示塗佈開始時刻的基板11b及噴嘴34b的平面圖。而且,圖4B是圖4A所示的噴嘴34b移動至兩點鏈線A2-A2'的位置的狀態下的A2-A2'剖面圖,圖4C是該狀態下的B2-B2'剖面圖。再者,於圖4A中,以實線表示糊劑35的塗佈對象區域19。而且,於圖4B及圖4C中,省略了噴嘴34b的內部結構的記載。 The coating method according to the second embodiment of the present invention will be described with reference to Figs. 4A to 4C. The coating method according to the second embodiment is a nozzle having a plurality of discharge ports arranged in a distributed manner and arranged not in a straight line shape, and is formed on a substrate having slit portions 18 at substantially square corners, and has a shape substantially along the outer periphery of the substrate. The area of the shape (application target area) is coated with a stripe pattern. 4A is a plan view showing the substrate 11b and the nozzle 34b at the application start timing. 4B is a cross-sectional view taken along the line A2-A2' in a state where the nozzle 34b shown in FIG. 4A is moved to the position of the two-dot chain line A2-A2', and FIG. 4C is a cross-sectional view taken along the line B2-B2' in this state. In addition, in FIG. 4A, the application target region 19 of the paste 35 is indicated by a solid line. Further, in FIGS. 4B and 4C, the description of the internal structure of the nozzle 34b is omitted.

載台31b是保持基板11b的保持單元,具有:基板載置面,呈朝向噴嘴34b的噴出口37為凸的非平面狀;以及保持機構,於該基板載置面上藉由真空吸附來保持上述基板11a。詳細而言,於圖4A的平面圖中,以自載台31b的左右邊朝向下邊中央附近分別畫出的一點鏈線C2、C2'為界,較該一點鏈線C2、C2'靠近載台31b的中央側的區域的厚度為固定,較一點鏈線C2、C2'靠近端部側的區域的厚度越朝向端部則越薄。再者,該些C2、C2'是與設有切口部18的邊分別平行地設置。因此,被保持於此處的基板11b 亦追隨地於一點鏈線C2、C2'處彎曲,以一點鏈線C2、C2'為界,基板11b的上表面朝向端部傾斜,與噴出口37的距離變大。如此,基板11b是呈朝向噴嘴34b為凸的非平面狀地由載台31b予以保持。即,對載台31b所設的傾斜及保持機構,相當於改變噴嘴34b的噴出口與基板11b的間隔的手段。 The stage 31b is a holding unit for holding the substrate 11b, and has a substrate mounting surface that is convex in a non-planar shape toward the discharge port 37 of the nozzle 34b, and a holding mechanism that is held by vacuum suction on the substrate mounting surface. The substrate 11a described above. Specifically, in the plan view of FIG. 4A, the one-point chain lines C2 and C2' drawn from the left and right sides of the loading table 31b toward the center of the lower side are bounded, and the stage 31b is closer to the one-point chain lines C2 and C2'. The thickness of the region on the center side is fixed, and the thickness of the region closer to the end side than the one of the chain lines C2 and C2' is thinner toward the end portion. Further, the C2 and C2' are provided in parallel with the side where the notch portion 18 is provided. Therefore, the substrate 11b held here It is also bent at the one-point chain lines C2 and C2', and the upper surface of the substrate 11b is inclined toward the end portion with the one-point chain lines C2 and C2' as the boundary, and the distance from the discharge port 37 is increased. In this manner, the substrate 11b is held by the stage 31b in a non-planar shape that is convex toward the nozzle 34b. That is, the tilting and holding mechanism provided to the stage 31b corresponds to means for changing the interval between the discharge port of the nozzle 34b and the substrate 11b.

於噴嘴34b中,多個噴出口37不同於實施方式1中例 示的大致一直線上的排列,而是以沿著塗佈開始位置的基板11b的外周形狀的方式而排列。具體而言,多個噴出口37是排列於在兩處部位彎曲的線上。而且,於噴嘴34b上,設有驅動機構,該驅動機構使該噴嘴34b朝與多個噴出口37的排列方向不同的方向(例如與排列在中心部的噴出口的排列大致正交的方向)移動。 In the nozzle 34b, the plurality of discharge ports 37 are different from the example in the first embodiment. The arrangement is arranged substantially in a straight line, but is arranged so as to be along the outer peripheral shape of the substrate 11b at the coating start position. Specifically, the plurality of discharge ports 37 are arranged on a line that is curved at two locations. Further, the nozzle 34b is provided with a drive mechanism that makes the nozzle 34b in a direction different from the direction in which the plurality of discharge ports 37 are arranged (for example, a direction substantially orthogonal to the arrangement of the discharge ports arranged in the center portion) mobile.

藉由一邊使噴嘴34b相對於基板11b而相對移動,一邊 自噴出口37噴出糊劑35,從而於基板11b上呈條紋狀地塗佈糊劑35。於該塗佈時,隨著噴嘴34b朝下游(圖4A的下方)移動,因載台31b及基板11b上所設的傾斜,自基板11b的左右兩側開始,噴出口37與基板11b的間隔逐漸變寬。藉此,自噴出口37與基板11b的間隔LC(參照圖1)達到規定長度以上的噴出口37依序(自圖4A的左右兩端依序)中斷液珠47,結束該噴出口37對糊劑35的塗佈。如此,可控制基板11b上的糊劑35的塗佈結束位置P。 By relatively moving the nozzle 34b relative to the substrate 11b, The paste 35 is ejected from the ejection port 37, and the paste 35 is applied to the substrate 11b in a stripe shape. At the time of this application, as the nozzle 34b moves downstream (downward in FIG. 4A), the inclination of the stage 31b and the substrate 11b is separated from the left and right sides of the substrate 11b by the discharge port 37 and the substrate 11b. Gradually widened. Thereby, the discharge port 37 having a predetermined length or more from the interval LC (see FIG. 1) of the discharge port 37 and the substrate 11b is sequentially interrupted (sequentially from the left and right ends of FIG. 4A), and the discharge port 37 is closed. Coating of agent 35. In this manner, the application end position P of the paste 35 on the substrate 11b can be controlled.

於實施方式2中,多個噴出口37是排列成朝向噴嘴34b 的移動方向敞開的大致C字狀,與此不同的是,糊劑35的塗佈結 束位置P是沿著一點鏈線C2、C2'而排列成朝與噴出口37的排列相反的方向敞開的大致C字狀。其結果,糊劑35的最終塗佈形狀成為大致沿著基板11b的外周形狀(例如八邊形)的形狀。 In the second embodiment, the plurality of discharge ports 37 are arranged to face the nozzle 34b. The difference is that the moving direction is substantially C-shaped, and the coating of the paste 35 is different. The bundle position P is arranged in a substantially C-shape which is opened in a direction opposite to the arrangement of the discharge ports 37 along the one-point chain lines C2 and C2'. As a result, the final applied shape of the paste 35 is a shape substantially along the outer peripheral shape (for example, an octagon) of the substrate 11b.

再者,於實施方式2中,配合塗佈開始位置的基板11b 的外周形狀,而將多個噴出口37排列於在兩處部位彎曲的線上,但亦可對應於糊劑35的塗佈形狀而變更為各種排列。例如當對呈矩形以外的多邊形狀(三角形或五邊形以上)的區域塗佈糊劑35時,亦可將噴出口37排列於在至少一處部位彎曲的線上。而且,例如當對由圓形狀或橢圓形狀等的閉合曲線圍成的區域塗佈糊劑35時,亦可將噴出口37排列於圓弧等的曲線上。而且,當對由包含直線及曲線的組合的閉合線圍成的區域塗佈糊劑35時,只要對應於該區域的形狀,將噴出口37排列於適當彎曲或彎折的線上即可。 Furthermore, in the second embodiment, the substrate 11b at the application start position is blended. In the outer peripheral shape, the plurality of discharge ports 37 are arranged on a line bent at two places, but may be changed to various arrangements in accordance with the application shape of the paste 35. For example, when the paste 35 is applied to a region having a polygonal shape (triangle or pentagon or more) other than a rectangle, the discharge port 37 may be arranged on a line bent at at least one portion. Further, for example, when the paste 35 is applied to a region surrounded by a closed curve such as a circular shape or an elliptical shape, the discharge port 37 may be arranged on a curved line such as an arc. Further, when the paste 35 is applied to a region surrounded by a closed line including a combination of a straight line and a curved line, the discharge port 37 may be arranged on a line that is appropriately bent or bent in accordance with the shape of the region.

進而,既可將多個噴出口37成1列地排列於直線或曲 線上,亦可於直線或曲線的附近沿著該些直線或曲線而排列。例如,亦可將多個噴出口37交替配置於直線或曲線的兩側。 Further, a plurality of discharge ports 37 may be arranged in a line or in a line. Lines can also be arranged along the lines or curves in the vicinity of a line or curve. For example, a plurality of discharge ports 37 may be alternately arranged on both sides of a straight line or a curved line.

(實施方式3) (Embodiment 3)

使用圖5A~圖6B來說明本發明的實施方式3的塗佈方法。 實施方式3的塗佈方法是與實施方式1同樣地,利用具有排列於大致一直線上的多個噴出口的噴嘴,於大致矩形的基板上,塗佈具有三角形的外周形狀的條紋狀的圖案。圖5A是表示塗佈開始時刻的基板及噴嘴的平面圖,圖5B是圖5A的A3-A3'剖面圖。而且, 圖6A是表示於基板的中間結束塗佈的時刻的基板及噴嘴的平面圖,圖6B是圖6A的A4-A4'剖面圖。再者,於圖5B及圖6B中,省略了噴嘴34c的內部結構的記載。 A coating method according to Embodiment 3 of the present invention will be described with reference to Figs. 5A to 6B. In the coating method of the third embodiment, in the same manner as in the first embodiment, a stripe pattern having a triangular outer peripheral shape is applied onto a substantially rectangular substrate by nozzles having a plurality of discharge ports arranged on a substantially straight line. 5A is a plan view showing a substrate and a nozzle at the start of coating, and FIG. 5B is a cross-sectional view taken along line A3-A3' of FIG. 5A. and, 6A is a plan view showing a substrate and a nozzle at the time of ending the application in the middle of the substrate, and FIG. 6B is a cross-sectional view taken along line A4-A4 of FIG. 6A. In addition, in FIG. 5B and FIG. 6B, the description of the internal structure of the nozzle 34c is abbreviate|omitted.

載台31c是藉由真空吸附來保持基板11c的保持單元。 於實施方式3中,不同於實施方式1的是,載台31c的厚度整體上均勻,基板11c於該載台31c上呈大致平面狀地受到保持。 The stage 31c is a holding unit that holds the substrate 11c by vacuum suction. In the third embodiment, unlike the first embodiment, the thickness of the stage 31c is uniform as a whole, and the substrate 11c is held substantially in a planar shape on the stage 31c.

於噴嘴34c上,具有排列在大致一直線上的多個噴出口 37。而且,於噴嘴34c上設有驅動機構,該驅動機構使噴嘴34c朝與多個噴出口37的排列方向不同的方向(例如大致正交的方向)移動。進而,於噴嘴34c上,設有使噴嘴34c自端部逐漸升降的噴嘴升降機構。該噴嘴升降機構是使該噴嘴34c的至少一部分朝噴嘴34c遠離基板11c的方向移動的機構,相當於改變噴嘴34c的噴出口37與基板11c的間隔的手段。 On the nozzle 34c, there are a plurality of discharge ports arranged on a substantially straight line 37. Further, the nozzle 34c is provided with a drive mechanism that moves the nozzle 34c in a direction (for example, a substantially orthogonal direction) different from the direction in which the plurality of discharge ports 37 are arranged. Further, a nozzle elevating mechanism for gradually raising and lowering the nozzle 34c from the end portion is provided in the nozzle 34c. The nozzle elevating mechanism is a mechanism that moves at least a part of the nozzle 34c in a direction away from the substrate 11c, and corresponds to a means for changing the interval between the discharge port 37 of the nozzle 34c and the substrate 11c.

如圖5A所示,藉由一邊使噴嘴34c相對於基板11c而 相對移動,一邊自噴出口37噴出糊劑35,從而於基板11c上呈條紋狀地塗佈糊劑35。於該塗佈時,隨著噴嘴34c朝下游(圖5A的下方)移動,使噴嘴34c的單側逐漸上升,從而使噴出口37與基板31c的間隔自端部開始逐漸變寬。再者,於圖6B中,是使噴嘴34c的右側上升。並且,自噴出口37與基板11c的間隔LC(參照圖1)達到規定長度以上的噴出口37依序(自右側依序)中斷液珠47(參照圖1),結束該噴出口37對糊劑35的塗佈。如此,可控制基板11c上的糊劑35的塗佈結束位置P。即,調整噴嘴34c 的上升量及上升速度,控制到達塗佈結束位置P的噴出口37與基板11c的間隔LC成為規定值以上,藉此獲得所需的糊劑35的塗佈形狀。 As shown in FIG. 5A, by simultaneously making the nozzle 34c relative to the substrate 11c The paste 35 is ejected from the discharge port 37 while being relatively moved, and the paste 35 is applied to the substrate 11c in a stripe shape. At the time of this coating, as the nozzle 34c moves downstream (downward in FIG. 5A), the one side of the nozzle 34c is gradually raised, and the interval between the discharge port 37 and the substrate 31c is gradually widened from the end portion. Further, in Fig. 6B, the right side of the nozzle 34c is raised. In addition, the discharge port 37 having a predetermined length or more from the interval LC (see FIG. 1) of the discharge port 37 and the substrate 11c is interrupted sequentially (from the right side) (see FIG. 1), and the discharge port 37 is closed to the paste. 35 coating. In this manner, the application end position P of the paste 35 on the substrate 11c can be controlled. That is, the adjustment nozzle 34c The amount of rise and the rate of increase, and the interval LC between the discharge port 37 reaching the application end position P and the substrate 11c is controlled to be equal to or greater than a predetermined value, thereby obtaining the desired coating shape of the paste 35.

於實施方式3中,以於糊劑35的塗佈結束位置P處使 噴嘴34c左端的噴出口37上升而中斷液珠的方式進行調整,以使得糊劑35的最終塗佈形狀的外周形狀成為三角形。此時,多個噴出口37是排列在與噴嘴34c的移動方向正交的大致一直線上,與此不同的是,糊劑35的塗佈結束位置P是排列在相對於噴嘴34c的移動方向而傾斜的大致一直線上。 In the third embodiment, at the coating end position P of the paste 35, The discharge port 37 at the left end of the nozzle 34c is raised to interrupt the liquid droplet so that the outer peripheral shape of the final coating shape of the paste 35 is triangular. At this time, the plurality of discharge ports 37 are arranged on a substantially straight line orthogonal to the moving direction of the nozzles 34c, and the application end position P of the paste 35 is arranged in the moving direction with respect to the nozzles 34c. The slope is roughly straight.

(實施方式4) (Embodiment 4)

使用圖7A~圖7C來說明本發明的實施方式4的塗佈方法。 圖7A是表示塗佈開始時刻的基板及噴嘴的平面圖。而且,圖7B是噴嘴34d移動至兩點鏈線A5-A5'的位置的狀態下的A5-A5'剖面圖,圖7C是該狀態下的B5-B5'剖面圖。再者,於圖7A中,以實線表示糊劑35的塗佈對象區域19。而且,於圖7B及圖7C中,省略了噴嘴34d的內部結構的記載。 A coating method according to Embodiment 4 of the present invention will be described with reference to Figs. 7A to 7C. Fig. 7A is a plan view showing a substrate and a nozzle at the start of coating. 7B is a cross-sectional view taken along line A5-A5' in a state where the nozzle 34d is moved to the position of the two-dot chain line A5-A5', and FIG. 7C is a cross-sectional view taken along line B5-B5' in this state. In addition, in FIG. 7A, the application target region 19 of the paste 35 is indicated by a solid line. Further, in FIGS. 7B and 7C, the description of the internal structure of the nozzle 34d is omitted.

載台31d是藉由真空吸附來保持基板11d的保持單元。 於實施方式3中,載台31d的厚度整體上均勻,基板11d於該載台31d上呈大致平面狀地受到保持。 The stage 31d is a holding unit that holds the substrate 11d by vacuum suction. In the third embodiment, the thickness of the stage 31d is uniform as a whole, and the substrate 11d is held substantially in a planar shape on the stage 31d.

基板11d呈在大致矩形(正方形)的四角設有切口部18 的形狀。而且,在較糊劑35的塗佈結束位置P靠近外周側的基板11d的區域,設有階差100,該階差100藉由相對於糊劑35的塗 佈對象區域19而使基板厚度變薄,從而使上表面相對於基板11d的上表面即糊劑35的塗佈對象區域19而下降。該階差100相當於改變噴嘴34d的噴出口37與基板11d的間隔的手段。 The substrate 11d is provided with cutout portions 18 at four corners of a substantially rectangular shape (square shape). shape. Further, in a region closer to the substrate 11d on the outer peripheral side than the coating end position P of the paste 35, a step 100 is provided which is coated with respect to the paste 35. The cloth target region 19 is made thinner, and the upper surface is lowered with respect to the upper surface of the substrate 11d, that is, the application target region 19 of the paste 35. This step difference 100 corresponds to a means for changing the interval between the discharge port 37 of the nozzle 34d and the substrate 11d.

階差100的高度(階差100的上表面與糊劑35的塗佈 對象區域19之差),成為於噴出口37與基板11d之間不再形成液珠47(參照圖1及圖2)的間隔以上。而且,於實施方式4中,沿著糊劑35的塗佈結束位置P側的基板11d的外周形狀而設有階差100。形成階差100的方式並無特別限定,可使用公知的各種方式。較佳的是,亦可使用機械加工(切削去除加工)或蝕刻(etching)等。 The height of the step 100 (the upper surface of the step 100 and the coating of the paste 35) The difference between the target regions 19 is equal to or larger than the interval between the discharge port 37 and the substrate 11d in which the liquid droplets 47 (see FIGS. 1 and 2) are not formed. Further, in the fourth embodiment, the step difference 100 is provided along the outer peripheral shape of the substrate 11d on the application end position P side of the paste 35. The form in which the step difference 100 is formed is not particularly limited, and various known methods can be used. Preferably, machining (cutting removal processing) or etching (etching) or the like can also be used.

噴嘴34d具有分散排列的多個噴出口37。該些噴出口 37是與實施方式2同樣地,以沿著塗佈開始位置的基板11d的外周形狀的方式,排列於在兩處部位彎曲的線上。而且,於噴嘴34b上,設有驅動機構,該驅動機構使該噴嘴34b朝規定方向(圖7A中為下方向)移動。 The nozzle 34d has a plurality of discharge ports 37 that are arranged in a distributed manner. The spray outlets In the same manner as in the second embodiment, 37 is arranged on a line curved at two locations so as to be along the outer peripheral shape of the substrate 11d at the application start position. Further, the nozzle 34b is provided with a drive mechanism that moves the nozzle 34b in a predetermined direction (downward in FIG. 7A).

藉由一邊使噴嘴34d相對於基板11d而相對移動,一邊 自噴出口37噴出糊劑35,從而於基板11d上呈條紋狀地塗佈糊劑35。噴嘴34d向下游(圖7A的下方)移動,當噴出口37依序到達階差100之上時,噴出口37與基板11d(階差100的上表面)的間隔變寬而中斷液珠47(參照圖1),結束該噴出口37對糊劑35的塗佈。藉此,可控制基板11d上的糊劑35的塗佈結束位置P。 於實施方式4中,多個噴出口37是排列成朝向噴嘴34d的移動方 向敞開的大致C字狀,與此不同的是,糊劑35的塗佈結束位置P配合階差100的形狀,而排列成朝與噴出口37的排列相反的方向敞開的大致C字狀。 By relatively moving the nozzle 34d relative to the substrate 11d, The paste 35 is ejected from the ejection port 37, and the paste 35 is applied to the substrate 11d in a stripe shape. The nozzle 34d moves downstream (downward in FIG. 7A), and when the discharge port 37 sequentially reaches the step 100, the interval between the discharge port 37 and the substrate 11d (the upper surface of the step 100) is widened to interrupt the liquid bead 47 ( Referring to Fig. 1), the application of the paste 35 to the discharge port 37 is completed. Thereby, the application end position P of the paste 35 on the substrate 11d can be controlled. In the fourth embodiment, the plurality of discharge ports 37 are arranged to move toward the nozzle 34d. In contrast to the substantially C-shaped shape, the application end position P of the paste 35 is matched with the shape of the step 100, and is arranged in a substantially C-shape that is open in a direction opposite to the arrangement of the discharge ports 37.

再者,階差100的較佳高度無法一概而言,但只要以可 切斷液珠的方式來預先設定糊劑35的性質或塗佈條件等,並根據該些條件等來決定高度即可。或者,亦可根據階差100的高度來設定糊劑35的性質或塗佈條件等。 Moreover, the preferred height of the step difference 100 cannot be generalized, but as long as it is The properties of the paste 35, the coating conditions, and the like are set in advance by cutting the liquid droplets, and the height may be determined according to the conditions and the like. Alternatively, the properties of the paste 35, the coating conditions, and the like may be set according to the height of the step difference 100.

作為實施方式4的塗佈方法的另一例,亦可取代於基板 11d上設置階差100,而是如圖8A及圖8B所示,對基板11d'設置傾斜部101。圖8A是於圖7A所示的載台31d上,載置設有傾斜部101的基板11d',且使噴嘴34d移動至圖7A的兩點鏈線A5-A5'的位置的狀態下的A5-A5'剖面圖,圖8B是該狀態下的圖7A的B5-B5'剖面圖。再者,於圖8A及圖8B中,省略了噴嘴34d的內部結構的記載。 As another example of the coating method of the fourth embodiment, it may be replaced with a substrate. The step difference 100 is set on 11d, and as shown in FIGS. 8A and 8B, the inclined portion 101 is provided to the substrate 11d'. 8A is a view showing a state in which the substrate 11d' provided with the inclined portion 101 is placed on the stage 31d shown in FIG. 7A, and the nozzle 34d is moved to the position of the two-dot chain line A5-A5' of FIG. 7A. -A5' cross-sectional view, and Fig. 8B is a cross-sectional view taken along line B5-B5' of Fig. 7A in this state. In addition, in FIGS. 8A and 8B, the description of the internal structure of the nozzle 34d is omitted.

此時,亦與上述階差100的情況同樣地,當使噴嘴34d 移動而噴出口37到達傾斜部101時,噴出口37與基板11d'的間隔逐漸變寬而中斷液珠,結束該噴出口37對糊劑35的塗佈。藉此,可控制基板11d'上的塗佈結束位置。 At this time, similarly to the case of the above-described step difference 100, when the nozzle 34d is made When the discharge port 37 reaches the inclined portion 101, the interval between the discharge port 37 and the substrate 11d' is gradually widened to interrupt the liquid droplet, and the application of the paste 35 to the discharge port 37 is completed. Thereby, the coating end position on the substrate 11d' can be controlled.

接下來,對各實施方式1~實施方式4的變形例進行說 明。 Next, a modification of each of Embodiments 1 to 4 will be described. Bright.

(變形例1) (Modification 1)

使用圖9及圖10來說明本發明的實施方式1及實施方式2的 塗佈方法的變形例1。於實施方式1、實施方式2中,使用厚度變化的載台31a、31b(參照圖3B、圖4B)來保持基板,但用於改變噴出口37與基板的間隔的載台並不限於此。例如,亦可如圖9所示,利用具有彎曲點39的載台31e。此時,基板11e是在彎曲點39處彎折的狀態下保持於載台31e。 The first and second embodiments of the present invention will be described with reference to FIGS. 9 and 10 . Modification 1 of the coating method. In the first embodiment and the second embodiment, the substrate is held by the stages 31a and 31b (see FIGS. 3B and 4B) having the thickness change. However, the stage for changing the interval between the discharge port 37 and the substrate is not limited thereto. For example, as shown in FIG. 9, a stage 31e having a bending point 39 may be used. At this time, the substrate 11e is held by the stage 31e in a state of being bent at the bending point 39.

而且,亦可如圖10所示,以一部分自載台31f的端部 突出的方式來配置基板11f,對基板11f的突出部施加朝下的力F且保持基板11f。作為施加力F且保持基板11f的手段,亦可將圖10所示的機械性地施加朝下的力F的加壓機構與將基板11f吸附保持於載台31f的機構加以組合而構成。而且,亦可利用掛鉤(hook)或黏著物,來朝下地拉伸且機械固定基板11f的端部,還可利用靜電力或風壓、重力(基板11f的自重)、磁力、電場等來施加力F。或者,亦可將如金屬基板般具有形狀保持性的基板呈非平面狀地彎曲,從而直接使用該基板。 Moreover, as shown in FIG. 10, a part of the end of the stage 31f may be self-supported. The substrate 11f is arranged in a protruding manner, and a downward force F is applied to the protruding portion of the substrate 11f to hold the substrate 11f. The means for applying the force F and holding the substrate 11f may be configured by combining a pressurizing mechanism that mechanically applies the downward force F as shown in FIG. 10 and a mechanism that adsorbs and holds the substrate 11f on the stage 31f. Further, the hook or the adhesive may be used to stretch and mechanically fix the end portion of the substrate 11f downward, and may also be applied by electrostatic force or wind pressure, gravity (self-weight of the substrate 11f), magnetic force, electric field, or the like. Force F. Alternatively, the substrate having a shape retaining property like a metal substrate may be bent in a non-planar shape to directly use the substrate.

(變形例2) (Modification 2)

使用圖11A~圖12B來說明本發明的實施方式3的塗佈方法的變形例2。圖11A是塗佈開始時刻的基板及噴嘴的俯視圖,圖11B是塗佈開始時刻的基板及噴嘴的正面圖。而且,圖12A是表示在圖11A所示的基板11g的中間結束塗佈的狀態的俯視圖,圖12B是表示在圖11A所示的基板11g的中間結束塗佈的狀態的正面圖。 A modification 2 of the coating method according to Embodiment 3 of the present invention will be described with reference to FIGS. 11A to 12B. 11A is a plan view of a substrate and a nozzle at the application start timing, and FIG. 11B is a front view of the substrate and the nozzle at the application start timing. In addition, FIG. 12A is a plan view showing a state in which the application is completed in the middle of the substrate 11g shown in FIG. 11A, and FIG. 12B is a front view showing a state in which the application is completed in the middle of the substrate 11g shown in FIG. 11A.

實施方式3中,示出了在噴嘴34c(參照圖6B)的移動 過程中使噴嘴的單側上升的例子。與此相對,於本變形例2中,如圖11A所示,將噴嘴34g分割成中央噴嘴部34g(C)與兩端的左噴嘴部34g(L)及右噴嘴部34g(R)而構成。左噴嘴部34g(L)及右噴嘴部34g(R)是以下述方式設置,即:配合塗佈開始位置的基板11g的外周形狀,相對於中央噴嘴部34g(C)中的噴出口37的排列,而傾斜地排列噴出口37。 In the third embodiment, the movement of the nozzle 34c (refer to FIG. 6B) is shown. An example of raising the one side of the nozzle during the process. On the other hand, in the second modification, as shown in FIG. 11A, the nozzle 34g is divided into a central nozzle portion 34g (C) and left nozzle portions 34g (L) and right nozzle portions 34g (R) at both ends. The left nozzle portion 34g (L) and the right nozzle portion 34g (R) are provided in such a manner that the outer peripheral shape of the substrate 11g at the application start position is opposite to the discharge port 37 in the central nozzle portion 34g (C). Arrange and arrange the discharge ports 37 obliquely.

如圖12A所示,藉由一邊使噴嘴34g相對於由平面狀的 載台31g所保持的基板11g而相對移動,一邊自噴出口37噴出糊劑35,從而於基板11g上呈條紋狀地塗佈糊劑35。於該塗佈時,如圖12B所示,藉由使左噴嘴部34g(L)及右噴嘴部34g(R)自端部開始逐漸上升,從而可自基板11g的左右端部依序結束糊劑35的塗佈。藉此,可將糊劑35塗佈成沿著基板11g的外周形狀的形狀。 As shown in FIG. 12A, the nozzle 34g is made to be planar with respect to one side. The substrate 11g held by the stage 31g is relatively moved, and the paste 35 is ejected from the ejection port 37, and the paste 35 is applied to the substrate 11g in a stripe shape. At the time of this coating, as shown in FIG. 12B, the left nozzle portion 34g (L) and the right nozzle portion 34g (R) are gradually raised from the end portion, whereby the paste can be sequentially terminated from the left and right end portions of the substrate 11g. Coating of agent 35. Thereby, the paste 35 can be applied in a shape along the outer peripheral shape of the substrate 11g.

再者,左噴嘴部34g(L)及右噴嘴部34g(R)既可對 應於所需的塗佈形狀來僅使任一者上升,亦可使兩者彼此錯開時機(timing)而上升。 Furthermore, the left nozzle portion 34g (L) and the right nozzle portion 34g (R) can be Only one of them may be raised in the desired coating shape, or the two may be shifted from each other by timing.

(變形例3) (Modification 3)

於上述實施方式1~實施方式4以及變形例1及變形例2中,對藉由使用具有多個噴出口37的噴嘴,來呈條紋狀地塗佈糊劑35的條紋塗佈法進行了說明,但該些實施方式1~實施方式4以及變形例1及變形例2亦可同樣適用於狹縫塗佈法。 In the above-described first to fourth embodiments, the first and second modifications, the stripe coating method in which the paste 35 is applied in a stripe shape by using the nozzle having the plurality of discharge ports 37 has been described. However, the first to fourth embodiments, the first modification, and the second modification can be applied to the slit coating method in the same manner.

圖13A~圖13C是對將實施方式1的塗佈方法適用於狹 縫塗佈法的例子進行說明的圖。圖13A是表示塗佈開始時刻的基板11a及噴嘴34h的平面圖。而且,圖13B是圖13A所示的噴嘴34h移動至兩點鏈線A6-A6'的位置的狀態下的A6-A6'剖面圖,圖13C是該狀態下的B6-B6'剖面圖。再者,於圖13A中,以影線表示糊劑35的塗佈對象區域19'。而且,於圖13B及圖13C中,省略了噴嘴34h的內部結構的記載。 13A to 13C are views for applying the coating method of the first embodiment to a narrow An example of the slit coating method will be described. Fig. 13A is a plan view showing the substrate 11a and the nozzle 34h at the application start timing. 13B is a cross-sectional view taken along line A6-A6' in a state where the nozzle 34h shown in FIG. 13A is moved to the position of the two-dot chain line A6-A6', and FIG. 13C is a cross-sectional view taken along line B6-B6' in this state. In addition, in FIG. 13A, the application target region 19' of the paste 35 is indicated by hatching. Further, in FIGS. 13B and 13C, the description of the internal structure of the nozzle 34h is omitted.

於噴嘴34h上,設有噴出糊劑35的狹縫狀的噴出口38。 而且,於噴嘴34h上,設有驅動機構,該驅動機構使噴嘴34h朝與噴出口38的長度方向不同的方向(例如與長度方向大致正交的方向)移動。 A slit-shaped discharge port 38 that ejects the paste 35 is provided on the nozzle 34h. Further, the nozzle 34h is provided with a drive mechanism that moves the nozzle 34h in a direction different from the longitudinal direction of the discharge port 38 (for example, a direction substantially orthogonal to the longitudinal direction).

藉由一邊使噴嘴34h相對於基板11a而相對移動,一邊 自噴出口38噴出糊劑35,從而在與噴出口38的寬度(長度方向的長度)大致相等的範圍內形成液珠,於基板11a上塗佈糊劑35。 於該塗佈時,隨著噴嘴34h朝下游(圖13A的下方)移動,因載台31a上所設的傾斜,噴出口38與基板11a的間隔自基板11a的右側開始逐漸變寬,從而中斷液珠以結束該部分的糊劑35的塗佈。藉此,可將糊劑35塗佈成所需的形狀(於圖13A中為三角形狀)。此時,噴出口38是沿著與噴嘴34h的移動方向正交的直線的狹縫狀,與此不同的是,糊劑35的塗佈結束位置Q的形狀成為沿著一點鏈線C1而相對於噴嘴34h的移動方向傾斜的直線。 By relatively moving the nozzle 34h relative to the substrate 11a, The paste 35 is ejected from the discharge port 38, and a liquid bead is formed in a range substantially equal to the width (length in the longitudinal direction) of the discharge port 38, and the paste 35 is applied onto the substrate 11a. At the time of the coating, as the nozzle 34h moves downstream (downward in FIG. 13A), the interval between the discharge port 38 and the substrate 11a gradually widens from the right side of the substrate 11a due to the inclination provided on the stage 31a, thereby interrupting The liquid bead ends the application of the paste 35 of this portion. Thereby, the paste 35 can be applied to a desired shape (triangular shape in Fig. 13A). At this time, the discharge port 38 has a slit shape along a straight line orthogonal to the moving direction of the nozzle 34h, and the shape of the application end position Q of the paste 35 is relatively along the one-point chain line C1. A straight line that is inclined in the moving direction of the nozzle 34h.

再者,噴出口38既可為圖13A所示的直線狀的狹縫, 亦可對應於糊劑35的塗佈形狀而變更為各種形狀。例如當對呈矩 形以外的多邊形狀(三角形或五邊形以上)的區域塗佈糊劑35時,亦可設置沿著至少於1處部位彎曲的線的狹縫狀的噴出口38。而且,例如當對由圓形狀或橢圓形狀等的閉合曲線圍成的區域塗佈糊劑35時,例如亦可設置沿著圓弧等曲線的狹縫狀的噴出口38。 而且,當對由包含直線及曲線的組合的閉合線圍成的區域塗佈糊劑35時,只要對應於該區域的形狀,設置適當彎曲或者彎折的狹縫狀的噴出口38。 Furthermore, the discharge port 38 can be a linear slit as shown in FIG. 13A. It is also possible to change to various shapes in accordance with the coating shape of the paste 35. For example, when the pair is moment When the paste 35 is applied to a polygonal shape (triangle or pentagon or more) other than the shape, a slit-shaped discharge port 38 may be provided along a line bent at at least one portion. Further, for example, when the paste 35 is applied to a region surrounded by a closed curve such as a circular shape or an elliptical shape, for example, a slit-shaped discharge port 38 along a curved line such as an arc may be provided. Further, when the paste 35 is applied to a region surrounded by a closed line including a combination of a straight line and a curved line, a slit-shaped discharge port 38 that is appropriately bent or bent is provided in accordance with the shape of the region.

圖14A~圖14C是對將實施方式2的塗佈方法適用於狹 縫塗佈法的例子進行說明的圖。圖14A是表示塗佈開始時刻的基板11b及噴嘴34i的平面圖。而且,圖14B是圖14A所示的噴嘴34i移動至兩點鏈線A7-A7'的位置的狀態下的A7-A7'剖面圖,圖14C是該狀態下的B7-B7'剖面圖。再者,於圖14A中,以影線表示糊劑35的塗佈對象區域19'。而且,於圖14B及圖14C中,省略了噴嘴34i的內部結構的記載。 14A to 14C are views for applying the coating method of the second embodiment to a narrow An example of the slit coating method will be described. Fig. 14A is a plan view showing the substrate 11b and the nozzle 34i at the application start timing. Further, Fig. 14B is a cross-sectional view taken along the line A7-A7' in a state where the nozzle 34i shown in Fig. 14A is moved to the position of the two-dot chain line A7-A7', and Fig. 14C is a cross-sectional view taken along the line B7-B7' in this state. In addition, in FIG. 14A, the application target region 19' of the paste 35 is indicated by hatching. Further, in FIGS. 14B and 14C, the description of the internal structure of the nozzle 34i is omitted.

於噴嘴34i上,設有噴出糊劑35的狹縫狀的噴出口38 (C)、38(L)、38(R)。該些噴出口38(C)、38(L)、38(R)是以沿著塗佈開始位置的基板11b的外周形狀的方式而配置。具體而言,以下述方式配置,即:相對於中央的噴出口38(C)的長度方向,左噴出口38(L)及右噴出口38(R)的長度方向具備角度。而且,於噴嘴34i上,設有驅動機構,該驅動機構使噴嘴34i朝與中央的噴出口38(C)的長度方向不同的方向(例如大致正交的方向)移動。 A slit-shaped discharge port 38 for ejecting the paste 35 is provided on the nozzle 34i. (C), 38 (L), 38 (R). The discharge ports 38 (C), 38 (L), and 38 (R) are disposed so as to have an outer peripheral shape of the substrate 11b along the application start position. Specifically, it is arranged such that the longitudinal direction of the left discharge port 38 (L) and the right discharge port 38 (R) has an angle with respect to the longitudinal direction of the center discharge port 38 (C). Further, the nozzle 34i is provided with a drive mechanism that moves the nozzle 34i in a direction (for example, a substantially orthogonal direction) different from the longitudinal direction of the central discharge port 38 (C).

當使用此種噴嘴34i來對基板11b塗佈糊劑35時,隨著 噴嘴34i朝下游(圖14A的下方)移動,因載台31b上所設的傾斜,噴出口38(L)、38(R)與基板11b的間隔自基板11b的左右兩端開始逐漸變寬,從而中斷液珠而結束該部分的糊劑35的塗佈。藉此,可將糊劑35塗佈成所需的形狀(圖14A中為八邊形狀)。 When such a nozzle 34i is used to apply the paste 35 to the substrate 11b, The nozzle 34i moves downstream (downward in FIG. 14A), and the interval between the discharge ports 38 (L), 38 (R) and the substrate 11b gradually widens from the left and right ends of the substrate 11b due to the inclination provided on the stage 31b. Thereby, the liquid bead is interrupted to terminate the application of the paste 35 in this portion. Thereby, the paste 35 can be applied in a desired shape (octagonal shape in Fig. 14A).

此時,噴出口38(C)、38(L)、38(R)整體為朝向噴 嘴34i的行進方向敞開的大致C字狀,與此不同的是,糊劑35的塗佈結束位置Q呈沿著一點鏈線C2、C2'而朝與噴出口38(C)、38(L)、38(R)的形狀相反的方向敞開的大致C字狀。 At this time, the entire discharge ports 38 (C), 38 (L), and 38 (R) are sprayed toward each other. The difference in the direction in which the nozzle 34i travels is substantially C-shaped, and the application end position Q of the paste 35 is directed to the discharge ports 38 (C) and 38 along the one-point chain lines C2 and C2'. And 38 (R) has a substantially C-shape that is open in the opposite direction.

再者,圖14A中示出了被分割成三者的噴出口38(C)、 38(L)、38(R),但亦可一體地設置該些噴出口。即,亦可設置至少於1處部位彎曲的1個狹縫狀的噴出口。 Furthermore, FIG. 14A shows the discharge port 38 (C) divided into three, 38 (L), 38 (R), but the discharge ports may be integrally provided. In other words, one slit-shaped discharge port that is bent at least at one location may be provided.

圖15A~圖15C是表示狹縫狀的噴出口的變形例的平面 圖。作為噴嘴34上所設的噴出口,例如亦可為如圖15A所示,沿著直線或曲線而一體地設置的狹縫38a。而且,例如亦可如圖15B所示,藉由將多個狹縫38b排列於1條直線或曲線上,而形成噴出口。進而,例如亦可如圖15C所示,藉由將多個狹縫38c交替配置於1條直線或曲線的兩側,而形成噴出口。 15A to 15C are planes showing a modified example of the slit-shaped discharge port. Figure. As the discharge port provided in the nozzle 34, for example, a slit 38a integrally provided along a straight line or a curved line as shown in Fig. 15A may be used. Further, for example, as shown in FIG. 15B, the plurality of slits 38b may be arranged on one straight line or curved line to form a discharge port. Further, for example, as shown in FIG. 15C, the plurality of slits 38c may be alternately arranged on both sides of one straight line or curved line to form a discharge port.

本發明的塗佈方法並不限於上述的各實施方式1~實施 方式4及變形例1~變形例3,例如亦可將他們適當組合,例如:於實施方式1中適用實施方式3或變形例2中例示的噴嘴。而且,上述塗佈方法不過是一例,在不損及本發明的效果的範圍內,亦 可由本領域技術人員進行設計變更或步驟附加。 The coating method of the present invention is not limited to the above-described respective embodiments 1 to In the fourth embodiment and the modifications 1 to 3, for example, they may be appropriately combined. For example, in the first embodiment, the nozzles exemplified in the third embodiment or the second modification are applied. Further, the above coating method is merely an example, and within the range that does not impair the effects of the present invention, Design changes or steps may be added by those skilled in the art.

而且,於上述實施方式1~實施方式4及變形例1~變 形例3中,是對矩形的基板(基板11a、11c)或者將矩形的四角切開的八邊形的基板(基板11b、11d、11d'、11g)塗佈塗液35,但基板的外周形狀並不限定於該些形狀。基板的外周形狀例如既可為三角形或五邊形以上的多邊形,亦可為包含圓形狀或橢圓形狀等閉合曲線的形狀,還可為包含閉合線的形狀,該閉合線包含直線及曲線的組合。藉由以沿著此種基板的外周形狀的方式來決定塗液35的塗佈形狀,從而可有效地活用基板上的區域。 Further, in the above-described first to fourth embodiments and the first to fourth modifications In the third example, the rectangular substrate (substrates 11a, 11c) or the octagonal substrates (substrates 11b, 11d, 11d', 11g) in which the rectangular corners are cut are coated with the coating liquid 35, but the outer peripheral shape of the substrate It is not limited to these shapes. The outer peripheral shape of the substrate may be, for example, a polygon having a triangle or a pentagon or more, a shape including a closed curve such as a circular shape or an elliptical shape, or a shape including a closed line including a combination of a straight line and a curved line. . By determining the coating shape of the coating liquid 35 along the outer peripheral shape of such a substrate, it is possible to effectively utilize the region on the substrate.

接下來,對於可用於本發明的上述各實施方式1~實施 方式4的塗佈方法中的塗佈裝置,參照圖16來進行說明。圖16所示的塗佈裝置40具有:載台31,例如藉由真空吸附來保持基板11;噴嘴34,自噴出口37噴出塗液35;使基板11與噴嘴34相對移動的機構;以及改變噴嘴34的噴出口與基板11的間隔的機構。作為該些構件中的噴嘴34及載台31,可適當適用上述的34a~34i及載台31a~31f。 Next, the above various embodiments 1 to 3 can be used in the present invention. The coating device in the coating method of the fourth embodiment will be described with reference to Fig. 16 . The coating device 40 shown in Fig. 16 has a stage 31 for holding the substrate 11 by vacuum suction, a nozzle 34, a coating liquid 35 ejected from the ejection port 37, a mechanism for relatively moving the substrate 11 and the nozzle 34, and a nozzle changing A mechanism for spacing the discharge ports of 34 from the substrate 11. As the nozzle 34 and the stage 31 in these members, the above-described 34a to 34i and the stages 31a to 31f can be suitably applied.

作為使基板11與噴嘴34相對移動的機構,可適用公知的機構。亦可更具備用於調整噴嘴34的位置的位置對準機構等。作為改變噴嘴34的噴出口37與基板11的間隔的機構,亦如已詳細說明的,只要可達成其目的,則其實現方式並無特別限定。 As a mechanism for relatively moving the substrate 11 and the nozzle 34, a known mechanism can be applied. A position alignment mechanism or the like for adjusting the position of the nozzle 34 may be further provided. As a mechanism for changing the interval between the discharge port 37 of the nozzle 34 and the substrate 11, as has been described in detail, the implementation thereof is not particularly limited as long as the object can be attained.

於塗佈裝置40中,由直線(linear)驅動裝置41及直線驅動裝置42,而構成使噴嘴34相對於基板11而相對移動的機 構,上述直線驅動裝置41使載台31沿著X方向移動,上述直線驅動裝置42使支持噴嘴34的托架(bracket)43沿著Y方向移動。 而且,由直線驅動裝置52及伺服馬達(servo motor)54,而構成改變噴嘴34的噴出口37與基板11的間隔的機構(噴嘴升降機構),上述直線驅動裝置52使支持噴嘴34的托架53沿著Z方向移動,上述伺服馬達54使噴嘴34沿θ方向(即在XZ面內)旋轉。 此時,藉由相機(camera)44,可相對於基板11來對噴嘴34進行位置對準,藉由高度感測器(sensor)45,可控制噴嘴34的噴出口37與基板11的間隔。 In the coating device 40, a linear drive device 41 and a linear drive device 42 constitute a mechanism for relatively moving the nozzle 34 relative to the substrate 11. The linear drive device 41 moves the stage 31 in the X direction, and the linear drive device 42 moves the bracket 43 that supports the nozzle 34 in the Y direction. Further, a linear drive device 52 and a servo motor 54 constitute a mechanism (nozzle lift mechanism) that changes the distance between the discharge port 37 of the nozzle 34 and the substrate 11, and the linear drive device 52 supports the bracket that supports the nozzle 34. The 53 moves in the Z direction, and the servo motor 54 rotates the nozzle 34 in the θ direction (i.e., in the XZ plane). At this time, the nozzle 34 can be aligned with respect to the substrate 11 by the camera 44, and the height of the sensor 45 can control the distance between the discharge port 37 of the nozzle 34 and the substrate 11.

接下來,對利用本發明的實施方式的塗佈方法的背面接 合太陽電池的製造方法進行說明。如圖17及圖18所示,背面接合型太陽電池10例如具有下述結構:於包含單晶n型矽半導體的基板11的背面(與受光面為相反側),載子(carrier)濃度比該基板11高的n型區域12與p型區域13呈條紋狀地反覆形成。於形成有該些n型區域12及p型區域13的一側的面上,形成著具有開口的保護膜15,該開口用於獲得n型區域12及p型區域13各自與電極的接觸(contact)。進而,於其表層,與n型區域12接觸的電極(n型接觸電極)16和與p型區域13接觸的電極(p型接觸電極)17形成為使各自的條紋的一端部連結而成的形狀。另一方面,於基板11的受光面,在大致整個面上形成有保護膜14。 有時亦於受光面側形成用於降低光反射損失(loss)的紋理(texture)結構或抗反射膜。 Next, the back side of the coating method using the embodiment of the present invention A method of manufacturing a solar cell will be described. As shown in FIG. 17 and FIG. 18, the back surface bonding type solar cell 10 has, for example, a configuration in which the back surface of the substrate 11 including the single crystal n-type germanium semiconductor (the side opposite to the light receiving surface) has a carrier concentration ratio. The n-type region 12 and the p-type region 13 which are high in the substrate 11 are formed in a stripe shape. On the surface on which the n-type region 12 and the p-type region 13 are formed, a protective film 15 having an opening for obtaining contact between the n-type region 12 and the p-type region 13 and the electrode is formed ( Contact). Further, on the surface layer, an electrode (n-type contact electrode) 16 that is in contact with the n-type region 12 and an electrode (p-type contact electrode) 17 that is in contact with the p-type region 13 are formed by connecting one end portion of each stripe. shape. On the other hand, a protective film 14 is formed on substantially the entire surface of the light receiving surface of the substrate 11. A texture structure or an anti-reflection film for reducing light reflection loss is sometimes formed on the light-receiving side.

再者,作為基板11,亦可使用包含p型矽或矽以外的半 導體的基板。而且,於本實施方式中,使用的是於正方形的四角設有切口部18的形狀的基板11,但基板11的形狀並無特別限定。 Further, as the substrate 11, a half other than a p-type 矽 or 矽 may be used. The substrate of the conductor. Further, in the present embodiment, the substrate 11 having the shape of the notched portion 18 is provided at the four corners of the square, but the shape of the substrate 11 is not particularly limited.

參照圖19A~圖19H,來說明背面接合型太陽電池10 的製造方法的一例。首先,如圖19A所示,於成為受光面的基板11的表面形成保護膜14。繼而,如圖19B所示,於基板11的背面,呈條紋狀地塗佈n型的摻雜糊劑並使其乾燥,藉此形成n型固相擴散源24。同樣地,於n型固相擴散源24的條紋的間隙,呈條紋狀地形成圖19C所示的p型固相擴散源25。於形成該些n型固相擴散源24及p型固相擴散源25時的摻雜糊劑的塗佈步驟中,可適用實施方式1~實施方式4的塗佈方法。 The back junction type solar cell 10 will be described with reference to FIGS. 19A to 19H. An example of the manufacturing method. First, as shown in FIG. 19A, a protective film 14 is formed on the surface of the substrate 11 to be the light receiving surface. Then, as shown in FIG. 19B, an n-type dopant paste is applied to the back surface of the substrate 11 in a stripe shape and dried to form an n-type solid phase diffusion source 24. Similarly, the p-type solid phase diffusion source 25 shown in Fig. 19C is formed in a stripe shape in the gap of the stripe of the n-type solid phase diffusion source 24. In the coating step of forming the dopant paste when the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are formed, the coating methods of the first to fourth embodiments can be applied.

繼而,對設有n型固相擴散源24及p型固相擴散源25 的基板11進行加熱,使n型固相擴散源24及p型固相擴散源25中分別所含的n型摻質(dopant)及p型摻質固相擴散於基板11中,藉此,形成圖19D所示的n型區域12及p型區域13。隨後,如圖19E所示,去除n型固相擴散源24及p型固相擴散源25。 Then, an n-type solid phase diffusion source 24 and a p-type solid phase diffusion source 25 are provided. The substrate 11 is heated to diffuse the n-type dopant and the p-type dopant solid phase contained in the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25, respectively, in the substrate 11. The n-type region 12 and the p-type region 13 shown in Fig. 19D are formed. Subsequently, as shown in FIG. 19E, the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are removed.

繼而,如圖19F所示,於基板11背面的整個面上形成 保護膜15,並如圖19G所示,藉由蝕刻法等對該保護膜15進行圖案加工,以形成開口15a。進而,如圖19H所示,藉由條紋塗佈法或絲網印刷法等,於包含開口15a的區域對電極糊劑進行圖案塗佈並煅燒,藉此形成n型接觸電極16及p型接觸電極17。藉此,獲得背面接合型太陽電池10。 Then, as shown in FIG. 19F, the entire surface of the back surface of the substrate 11 is formed. The protective film 15 is patterned as shown in FIG. 19G by etching or the like to form an opening 15a. Further, as shown in FIG. 19H, the electrode paste is pattern-coated and fired in a region including the opening 15a by a stripe coating method or a screen printing method, thereby forming an n-type contact electrode 16 and a p-type contact. Electrode 17. Thereby, the back junction type solar cell 10 is obtained.

再者,作為變形例,亦可在對形成有n型固相擴散源24 及p型固相擴散源25的基板11(參照圖19C)進行加熱之前,如圖20A所示,對n型固相擴散源24及p型固相擴散源25的整個表面塗佈遮蔽(masking)糊劑,以形成覆蓋n型固相擴散源24及p型固相擴散源25的擴散遮罩(mask)21。而且,亦可如圖20B所示,於n型固相擴散源24與p型固相擴散源25之間,形成條紋狀的擴散遮罩21'。於形成此種擴散遮罩21'時的遮蔽糊劑的塗佈步驟中,亦可適用實施方式1~實施方式4的塗佈方法。 Furthermore, as a modification, an n-type solid phase diffusion source 24 may be formed in the pair. Before the substrate 11 (see FIG. 19C) of the p-type solid phase diffusion source 25 is heated, as shown in FIG. 20A, the entire surface of the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 is masked (masking). A paste is formed to form a diffusion mask 21 covering the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25. Further, as shown in FIG. 20B, a stripe-shaped diffusion mask 21' may be formed between the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25. The coating method of the first to fourth embodiments can also be applied to the coating step of the masking paste when the diffusion mask 21' is formed.

此處,圖19A~圖19H中例示的背面接合太陽電池的製 造方法,是呈條紋狀地塗佈n型摻雜糊劑之後暫時使其乾燥,藉此形成n型固相擴散源24,隨後,呈條紋狀地塗佈p型摻雜糊劑之後再次使其乾燥,藉此形成p型固相擴散源25。當將實施方式1~實施方式4的塗佈方法適用於上述背面接合太陽電池的製造方法時,自彼此相反的方向開始塗佈n型摻雜糊劑及p型摻雜糊劑,藉此可容易地獲得交替地排列有n型固相擴散源24及p型固相擴散源25的條紋狀(亦稱作梳型形狀)的圖案。 Here, the system of the back junction solar cell illustrated in FIGS. 19A to 19H In the method, the n-type dopant paste is applied in a stripe shape and then temporarily dried to form an n-type solid phase diffusion source 24, and then the p-type dopant paste is applied in a stripe shape and then again It is dried, thereby forming a p-type solid phase diffusion source 25. When the coating method of the first embodiment to the fourth embodiment is applied to the method for producing the back surface bonded solar cell, the n-type dopant paste and the p-type dopant paste are applied from opposite directions. A pattern of a stripe shape (also referred to as a comb shape) in which the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are alternately arranged is easily obtained.

以下,參照圖21A~圖21D,來具體說明n型及p型的 摻雜糊劑的塗佈方法。於以下的說明中,作為一例,適用實施方式2的塗佈方法(參照圖4A~圖4C)。 Hereinafter, the n-type and p-type will be specifically described with reference to FIGS. 21A to 21D. A method of coating a doped paste. In the following description, the coating method of the second embodiment is applied as an example (see FIGS. 4A to 4C).

首先,如圖21A所示,將實施方式2中說明的載台31b 及噴嘴34b設置於塗佈裝置(例如參照圖16),將基板11以背面成為上側的方式載置並吸附保持於載台31b上。然後,於該背面 上,呈條紋狀地塗佈n型摻雜糊劑,形成與具有切口部18的基板11的外周形狀對應的條紋狀的n型摻雜圖案。使該n型摻雜圖案乾燥而構成n型固相擴散源24(參照圖21B)。 First, as shown in FIG. 21A, the stage 31b explained in the second embodiment will be described. The nozzle 34b is provided in a coating device (for example, see FIG. 16), and the substrate 11 is placed on the back side so as to be placed on the stage 31b. Then on the back The n-type doping paste is applied in a stripe shape to form a stripe-shaped n-type doping pattern corresponding to the outer peripheral shape of the substrate 11 having the notched portion 18. The n-type doping pattern is dried to form an n-type solid phase diffusion source 24 (see FIG. 21B).

繼而,如圖21C所示,使基板11與圖21A上下反向地 載置並吸附保持於載台31b上。然後,呈條紋狀地塗佈p型摻雜糊劑,形成與具有切口部18的基板11的外周形狀對應的條紋狀的p型摻雜圖案。此時,以p型摻雜圖案形成在先形成的n型固相擴散源24之間的方式進行位置對準。進而,使該p型摻雜圖案乾燥以構成p型固相擴散源25,藉此獲得交替地排列有n型固相擴散源24及p型固相擴散源25的條紋狀的圖案(參照圖21D)。 Then, as shown in FIG. 21C, the substrate 11 is reversed from FIG. 21A. It is placed and adsorbed and held on the stage 31b. Then, the p-type doping paste is applied in a stripe shape to form a stripe-shaped p-type doping pattern corresponding to the outer peripheral shape of the substrate 11 having the notched portion 18. At this time, alignment is performed in such a manner that a p-type doping pattern is formed between the previously formed n-type solid phase diffusion sources 24. Further, the p-type doping pattern is dried to form a p-type solid phase diffusion source 25, thereby obtaining a stripe pattern in which the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are alternately arranged (refer to the figure). 21D).

而且,不僅對摻雜糊劑,對於蝕刻糊劑或遮蔽糊劑、電 極糊劑等,亦可使用上述實施方式1~實施方式4的塗佈方法來呈條紋狀地塗佈。 Moreover, not only for doping paste, but also for etching paste or masking paste, electricity The paste or the like may be applied in a stripe shape by the coating methods of the above-described first to fourth embodiments.

此處,摻雜糊劑的成分只要含有摻質成分,則無特別限 定。例如,可使用以用於藉由旋塗玻璃(Spin-on-Glass,SOG)法來形成摻雜氧化物(doped oxide)膜的糊劑為中心的公知材料。 作為其典型的成分,較佳的是至少包含基質(matrix)材料、溶劑、摻質。有時亦視需要來添加公知的增黏劑。 Here, the composition of the dopant paste is not particularly limited as long as it contains a dopant component. set. For example, a known material centering on a paste for forming a doped oxide film by a spin-on-glass (SOG) method can be used. As a typical component thereof, it is preferred to contain at least a matrix material, a solvent, and a dopant. Sometimes known tackifiers are added as needed.

作為較佳的摻雜糊劑的基質材料,可列舉於煅燒後形成 二氧化矽(silica)膜的矽化合物。具體而言,可例示烷氧基矽烷醇(alkoxy silanol)、烷氧基矽烷(alkoxy silane)、烷基矽烷醇(alkyl silanol)、烷基矽烷(alkyl silane)、倍半矽氧烷(silsesquioxane)、 矽烷醇(silanolate)及該些化合物的芳香族取代體或者使該些化合物寡聚物(oligomer)化的廣義的矽氧烷(siloxane)材料。於基質材料中,亦可添加其他玻璃質形成材料或有機黏合劑(binder)等。 As a preferred matrix material for the dopant paste, it can be mentioned after calcination. An antimony compound of a silica membrane. Specifically, alkoxy silanol, alkoxy silane, alkyl silanol, alkyl silane, silsesquioxane can be exemplified. , Silanolate and aromatic substituents of such compounds or generalized siloxane materials which oligomerize these compounds. Other glassy materials or organic binders may be added to the matrix material.

溶媒只要是溶解基質材料者,則無特別限定,可例示醇 或酯、醚、醛、酮、水、酸等。 The solvent is not particularly limited as long as it is a matrix material, and an alcohol can be exemplified. Or esters, ethers, aldehydes, ketones, water, acids, and the like.

作為對矽半導體基板的n型摻質,可例示包含磷、砷、銻等的化合物,作為p型摻質,可例示包含硼或鋁等的化合物。具體而言,可列舉五氧化二磷或氧化磷、磷酸、磷系鹽、有機磷化合物、氧化硼、硼酸、硼鹽、有機硼化合物、硼-鋁化合物、鋁鹽、有機鋁化合物作為較佳例。 The n-type dopant of the tantalum semiconductor substrate may, for example, be a compound containing phosphorus, arsenic or antimony. Examples of the p-type dopant include compounds containing boron or aluminum. Specific examples thereof include phosphorus pentoxide or phosphorus oxide, phosphoric acid, phosphorus salts, organic phosphorus compounds, boron oxide, boric acid, boron salts, organic boron compounds, boron-aluminum compounds, aluminum salts, and organoaluminum compounds. example.

基質材料多於摻雜糊劑中調整為50質量%以下的濃度。摻質較佳為以摻雜糊劑的10質量%以下的濃度而添加,更佳為5質量%以下。再者,亦可不使用基質材料,而使用僅包含摻質及溶媒的溶液,但必須注意無基質材料引起的氣相擴散。再者,摻雜糊劑的黏度並無特別限定,較佳為以0.5mPa.s~3000mPa.s使用,更佳為以5mPa.s~500mPa.s使用。 The matrix material is adjusted to a concentration of 50% by mass or less in the dopant paste. The dopant is preferably added at a concentration of 10% by mass or less of the dopant paste, and more preferably 5% by mass or less. Further, it is also possible to use a solution containing only a dopant and a solvent without using a matrix material, but care must be taken to prevent vapor phase diffusion caused by the matrix material. Further, the viscosity of the dopant paste is not particularly limited, and is preferably 0.5 mPa. s~3000mPa. s use, more preferably at 5mPa. s~500mPa. s use.

而且,作為遮蔽糊劑的材料,可例示與上述摻雜糊劑同樣的、於煅燒後形成二氧化矽膜的矽化合物。具體而言,可例示烷氧基矽烷醇、烷氧基矽烷、烷基矽烷醇、烷基矽烷、倍半矽氧烷、矽烷醇及該些化合物的芳香族取代體或者使該些化合物寡聚物化的廣義的矽氧烷材料。 Further, as the material of the masking paste, an anthracene compound which forms a ceria film after calcination similarly to the above-mentioned dopant paste can be exemplified. Specifically, alkoxystanol, alkoxydecane, alkylstanol, alkylnonane, sesquiterpene oxide, stanol, and aromatic substituents of the compounds may be exemplified or oligomerized Materialized generalized siloxane material.

作為蝕刻糊劑的材料,並無特別限定,但例如較佳的是 下述材料,其包含氟化氫、銨(ammonium)、磷酸、硫酸、硝酸中的至少一種作為蝕刻成分,且包含水或有機溶劑、增黏劑等作為除此以外的成分。 The material of the etching paste is not particularly limited, but for example, it is preferably The following material contains at least one of hydrogen fluoride, ammonium, phosphoric acid, sulfuric acid, and nitric acid as an etching component, and contains water, an organic solvent, a tackifier, or the like as a component other than the above.

作為電極糊劑的材料,可較佳地使用銀或鋁、銅等的導 電性微粒子成分與溶劑及/或聚合物成分的混合物。聚合物亦可於煅燒後殘存,但藉由於煅燒時使該聚合物熱分解,可提高導電性微粒子彼此的黏合性,從而可提高電極的導電性。作為聚合物成分,可使用丙烯系、環氧系等的公知材料。 As a material of the electrode paste, a guide of silver or aluminum, copper or the like can be preferably used. A mixture of an electrical particulate component and a solvent and/or polymer component. The polymer may remain after calcination. However, since the polymer is thermally decomposed during calcination, the adhesion of the conductive fine particles can be improved, and the conductivity of the electrode can be improved. As the polymer component, a known material such as a propylene-based or epoxy-based material can be used.

於本發明的各實施方式中使用的基板11的材質並無特 別限定。可使用玻璃;氧化鋁(alumina)或氧化鋯(zirconia)等的陶瓷(ceramics);鋁或銅、不鏽鋼等的金屬;矽或鍺、鎵砷、氮化鎵、氧化鋅、藍寶石(sapphire)、碳化矽等的半導體;聚對苯二甲酸乙二醇酯(polyethylene terephthalate,PET)或聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)、丙烯酸、聚碳酸酯(polycarbonate)、聚醯亞胺(polyimide)、芳族聚醯胺(aramid)等的樹脂基板。其厚度亦無特別限定。作為如實施方式1及實施方式2般非平面地彎曲的基板,可例示厚度為10μm~3mm、更佳為50μm~1mm的玻璃基板與厚度為10μm~2mm、更佳為50μm~0.5mm的矽基板,作為尤佳的基板。尤其,於太陽電池用途中,適合使用結晶矽基板的厚度薄於300μm且厚度為120μm左右的基板,因此可使基板容易地撓曲。而且,適合用於顯示器 (display)用途的玻璃基板的厚度亦多為0.7mm以下,可使基板容易地撓曲。因而,只要以大於基板的反彈力的力來保持於載台,便可使基板非平面地彎曲。 The material of the substrate 11 used in each embodiment of the present invention is not particularly Do not limit. It is possible to use glass; ceramics such as alumina or zirconia; metals such as aluminum or copper, stainless steel; bismuth or antimony, gallium arsenide, gallium nitride, zinc oxide, sapphire, Semiconductors such as tantalum carbide; polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), acrylic acid, polycarbonate, polyimine A resin substrate such as (polyimide) or aromatic aramid. The thickness thereof is also not particularly limited. The substrate which is curved non-planarly as in the first embodiment and the second embodiment may, for example, be a glass substrate having a thickness of 10 μm to 3 mm, more preferably 50 μm to 1 mm, and a crucible having a thickness of 10 μm to 2 mm, more preferably 50 μm to 0.5 mm. The substrate is a particularly good substrate. In particular, in a solar cell application, a substrate having a thickness of a crystalline germanium substrate of less than 300 μm and a thickness of about 120 μm is suitably used, so that the substrate can be easily deflected. Moreover, suitable for use in displays The thickness of the glass substrate used for (display) is also 0.7 mm or less, and the substrate can be easily deflected. Therefore, the substrate can be bent non-planarly by holding it on the stage with a force greater than the rebounding force of the substrate.

於本發明的各實施方式中,中斷液珠所需的噴出口37 與基板11的間隔LC(參照圖1及圖2)會視糊劑35的黏度或表面張力、噴嘴34的相對移動速度、基板11與糊劑35的附著力等而變化,因此難以一概而示。於為了製造背面接合型太陽電池而於單晶矽基板上條紋塗佈相對較低黏度(例如於室溫下的塗佈環境中為5mPa.s~500mPa.s)的遮蔽糊劑或摻雜糊劑的例子中,塗佈時的典型的噴出口與基板的間隔為20μm~200μm,藉由使該間隔進而以10μm~100μm的範圍變寬,可使液珠中斷。於進行狹縫塗佈的例子中,塗佈時的典型的噴出口與基板的間隔為50μm~500μm,藉由使該間隔進而以30μm~300μm的範圍變寬,可使液珠中斷。因而,即使於呈非平面狀地保持基板的情況下,其位移量典型的是只要為10μm~300μm即可,只要基板具有微弱的可撓性便足夠。 In various embodiments of the present invention, the discharge port 37 required to interrupt the liquid bead The distance LC from the substrate 11 (see FIGS. 1 and 2 ) changes depending on the viscosity or surface tension of the paste 35 , the relative moving speed of the nozzle 34 , the adhesion between the substrate 11 and the paste 35 , and the like. . A masking paste or a doping paste which is relatively thinly coated on a single crystal germanium substrate to produce a back-bonded solar cell with a relatively low viscosity (for example, 5 mPa·s to 500 mPa·s in a coating environment at room temperature). In the example of the agent, the interval between the typical discharge port and the substrate at the time of coating is 20 μm to 200 μm, and by further widening the interval in the range of 10 μm to 100 μm, the bead can be interrupted. In the example of the slit coating, the interval between the typical discharge port and the substrate at the time of coating is 50 μm to 500 μm, and by further widening the interval in the range of 30 μm to 300 μm, the bead can be interrupted. Therefore, even in the case where the substrate is held in a non-planar shape, the displacement amount is typically 10 μm to 300 μm, and it suffices that the substrate has a weak flexibility.

於本發明的各實施方式中,在1片基板的條紋塗佈結束 的時刻,於噴嘴的噴出口處會附著有糊劑的積留,其附著量視塗佈形狀而不均勻。在塗佈下個基板之前,只要藉由擦拭附著於噴出口的積留來初始化即可。 In each embodiment of the present invention, the stripe coating on one substrate is completed. At the time of the deposition, the accumulation of the paste adheres to the discharge port of the nozzle, and the amount of adhesion is uneven depending on the coating shape. Before the next substrate is applied, it may be initialized by wiping the accumulation attached to the discharge port.

如以上所說明的,本發明的各實施方式的塗佈方法及塗佈裝置作為一例,可較佳地利用於在半導體基板的背面呈條紋狀 地形成有n型區域及p型區域的背面接合型太陽電池的製造中。 As described above, the coating method and the coating apparatus according to each embodiment of the present invention can be preferably used in the form of stripes on the back surface of the semiconductor substrate. In the manufacture of a back junction type solar cell in which an n-type region and a p-type region are formed.

根據本發明的各實施方式,對於呈任意塗佈形狀的塗佈 對象區域,可呈條紋狀地、高精度地對摻雜糊劑或遮蔽糊劑等進行圖案塗佈。因而,不會損及背面接合型太陽電池的轉換效率,而可大幅縮短製造步驟,且有效地活用基板11上的區域,從而可實現低成本化。 Coating in any coating shape according to various embodiments of the present invention In the target region, the doping paste, the masking paste, or the like can be pattern-coated in a stripe shape with high precision. Therefore, the conversion efficiency of the back surface bonding type solar cell is not impaired, the manufacturing process can be greatly shortened, and the area on the substrate 11 can be effectively utilized, and the cost can be reduced.

於上述說明中,是以背面型太陽電池的製造方法為中心 地例示,但本發明的各實施方式的塗佈方法及塗佈裝置,亦可於在半導體表面形成有p型及/或n型區域圖案的半導體元件(device)、例如電晶體陣列(transistor array)或二極體陣列(diode array)、光二極體陣列、轉換器(transducer)等的製造方法中展開。進而,亦可應用於在玻璃基板上塗佈彩色糊劑等的彩色濾光器等的顯示器構件。 In the above description, it is centered on the manufacturing method of the back type solar cell. For example, the coating method and the coating device according to each embodiment of the present invention may be a semiconductor device in which a p-type and/or n-type region pattern is formed on a semiconductor surface, for example, a transistor array (transistor array). Or developed in a method of manufacturing a diode array, a photodiode array, a transducer, or the like. Further, it can also be applied to a display member such as a color filter that applies a color paste or the like to a glass substrate.

實施例 Example

以下,藉由實施例來更具體地說明本發明。但是,本發明的內容並不限於以下的實施例。 Hereinafter, the present invention will be more specifically described by way of examples. However, the content of the present invention is not limited to the following embodiments.

(實施例1) (Example 1)

基於圖19A~圖19H及圖21A~圖21D所示的方法,來製造背面接合型太陽電池。 A back junction type solar cell was fabricated based on the methods shown in FIGS. 19A to 19H and 21A to 21D.

首先,準備包含n型單晶矽半導體的基板11,該基板11的厚度為約200μm,且於一邊為125mm的正方形的四角設有約14mm的切口部。基板11的雜質濃度為約3×1016/cm3。藉由鹼溶液來將 表面蝕刻約20μm而去除切片損傷(slice damage)之後,如圖19A所示,於基板11的受光面上,藉由化學氣相沈積(Chemical Vapor Deposition,CVD)法,形成包含氮化矽的保護膜14。 First, a substrate 11 including an n-type single crystal germanium semiconductor having a thickness of about 200 μm and a notched portion of about 14 mm at a square corner of 125 mm on one side was prepared. The impurity concentration of the substrate 11 is about 3 × 10 16 /cm 3 . After the surface is etched by an alkali solution for about 20 μm to remove slice damage, as shown in FIG. 19A, a chemical vapor deposition (CVD) method is formed on the light-receiving surface of the substrate 11. A protective film 14 containing tantalum nitride.

繼而,如圖21A所示,將基板11真空吸附地保持用於 非平面狀的載台31b。藉此,較一點鏈線C2、C2'靠近端部側的基板11的區域以朝向切口部18下降的狀態受到保持。下降的高度於基板11的端部處為約200μm。 Then, as shown in FIG. 21A, the substrate 11 is vacuum-adsorbed and used for The non-planar stage 31b. Thereby, the area of the substrate 11 closer to the end side than the chain lines C2 and C2' is held in a state of being lowered toward the notch portion 18. The height of the drop is about 200 μm at the end of the substrate 11.

在此狀態下,使以沿著基板11的外周形狀的方式而排 列有噴出口37的噴嘴34b,以15mm/s的速度朝圖的下方移動,於基板11上呈條紋狀地塗佈n型摻雜糊劑。塗佈時的噴出口37與基板11的間隔為40μm。作為n型摻雜糊劑,使用如下所述的混合溶液,該混合溶液包含5質量%的以四乙氧基矽烷(tetraethoxysilane)作為起始原料的矽化合物作為基質材料,且包含3質量%的五氧化二磷作為n型摻質,且溶媒為70質量%的異丙醇(isopropyl alcohol)與30質量%的乙酸乙酯。該糊劑於室溫下的塗佈環境中的黏度為約20mPa.s。 In this state, the row is arranged along the outer peripheral shape of the substrate 11. The nozzles 34b having the discharge ports 37 are moved to the lower side of the drawing at a speed of 15 mm/s, and the n-type doping paste is applied to the substrate 11 in a stripe shape. The interval between the discharge port 37 and the substrate 11 at the time of coating was 40 μm. As the n-type doping paste, a mixed solution containing 5% by mass of a cerium compound starting with tetraethoxysilane as a host material and containing 3% by mass is used. Phosphorus pentoxide is used as the n-type dopant, and the solvent is 70% by mass of isopropyl alcohol and 30% by mass of ethyl acetate. The paste has a viscosity of about 20 mPa in a coating environment at room temperature. s.

當噴嘴34b越過一點鏈線C2、C2'的部分時,噴出口37 與基板11的間隔將變寬,因此自基板11的左右兩端側開始,液珠依序中斷而結束糊劑35的塗佈。最終,控制糊劑35的塗佈結束位置在切口部18的跟前大致沿著基板11的外周形狀。 When the nozzle 34b crosses a portion of the chain line C2, C2', the discharge port 37 Since the distance from the substrate 11 is widened, the liquid droplets are sequentially interrupted from the left and right end sides of the substrate 11 to terminate the application of the paste 35. Finally, the application end position of the control paste 35 is substantially along the outer peripheral shape of the substrate 11 in front of the notch portion 18.

隨後,將塗佈有n型摻雜糊劑的基板11,於氮中以150℃加熱10分鐘,繼而以500℃加熱30分鐘,藉此,形成具有圖19B 及圖21B所示的條紋狀的塗佈圖案的n型固相擴散源24。該n型固相擴散源24的圖案的厚度為0.3μm、寬度為160μm、間距(pitch)為600μm。 Subsequently, the substrate 11 coated with the n-type doping paste was heated in nitrogen at 150 ° C for 10 minutes, and then heated at 500 ° C for 30 minutes, thereby forming a pattern having FIG. 19B. And an n-type solid phase diffusion source 24 of a striped coating pattern shown in FIG. 21B. The pattern of the n-type solid phase diffusion source 24 has a thickness of 0.3 μm, a width of 160 μm, and a pitch of 600 μm.

繼而,將形成有n型固相擴散源24的基板11如圖21C 所示,與n型摻雜糊劑的塗佈步驟反向地保持於載台31b上,並與n型摻雜糊劑同樣地,呈條紋狀地塗佈p型摻雜糊劑。塗佈時的噴出口37與基板11的間隔為40μm。作為p型摻雜糊劑,使用如下所述的混合溶液,該混合溶液包含5質量%的以四乙氧基矽烷作為起始原料的矽化合物作為基質材料,且包含3質量%的氧化硼作為p型摻質,且溶媒為70質量%的異丙醇與30質量%的乙酸乙酯。該糊劑於室溫下的塗佈環境中的黏度為約20mPa.s。 Then, the substrate 11 on which the n-type solid phase diffusion source 24 is formed is as shown in FIG. 21C. As shown in the figure, the coating step of the n-type doping paste is held on the stage 31b in the reverse direction, and the p-type dopant paste is applied in a stripe shape in the same manner as the n-type dopant paste. The interval between the discharge port 37 and the substrate 11 at the time of coating was 40 μm. As the p-type doping paste, a mixed solution containing 5% by mass of a cerium compound starting with tetraethoxy decane as a host material and containing 3% by mass of boron oxide was used as a mixed solution. The p-type dopant was used, and the solvent was 70% by mass of isopropyl alcohol and 30% by mass of ethyl acetate. The paste has a viscosity of about 20 mPa in a coating environment at room temperature. s.

隨後,將塗佈有p型摻雜糊劑的基板11,於氮中以150℃ 加熱10分鐘,繼而以500℃加熱30分鐘,藉此,形成具有圖19C及圖21D所示的條紋狀的塗佈圖案的p型固相擴散源25。該p型固相擴散源25的圖案的厚度為0.3μm、寬度為360μm、間距為600μm。 Subsequently, the substrate 11 coated with the p-type doping paste was 150 ° C in nitrogen. After heating for 10 minutes and then heating at 500 ° C for 30 minutes, a p-type solid phase diffusion source 25 having a stripe-like coating pattern shown in FIGS. 19C and 21D was formed. The pattern of the p-type solid phase diffusion source 25 has a thickness of 0.3 μm, a width of 360 μm, and a pitch of 600 μm.

繼而,如圖19D所示,將基板11於氮中以950℃加熱 60分鐘,以使n型固相擴散源24及p型固相擴散源25中分別所含的n型摻質(磷原子)及p型摻質(硼原子)分別擴散至基板11中,藉此形成n型區域12及p型區域13。隨後,如圖19E所示,藉由使用氫氟酸的蝕刻,去除n型固相擴散源24及p型固相擴散源25。 Then, as shown in FIG. 19D, the substrate 11 is heated at 950 ° C in nitrogen. The n-type dopant (phosphorus atom) and the p-type dopant (boron atom) contained in the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are respectively diffused into the substrate 11 for 60 minutes, This forms the n-type region 12 and the p-type region 13. Subsequently, as shown in FIG. 19E, the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are removed by etching using hydrofluoric acid.

繼而,如圖19F所示,對基板11的背面進行乾式(dry) 氧化,藉此,於整個面上形成厚度約0.2μm的包含氧化矽的保護膜15。然後,如圖19G所示,於保護膜15上將抗蝕劑(resist)圖案化後,利用氫氟酸進行蝕刻,藉此形成寬約100μm的開口15a。進而,如圖19H所示,藉由絲網印刷,對包含開口15a的區域圖案塗佈電極糊劑,並以800℃進行煅燒,藉此形成n型接觸電極16及p型接觸電極17。 Then, as shown in FIG. 19F, the back surface of the substrate 11 is dry. Oxidation, thereby forming a protective film 15 containing ruthenium oxide having a thickness of about 0.2 μm over the entire surface. Then, as shown in FIG. 19G, a resist is patterned on the protective film 15, and then etched by hydrofluoric acid, thereby forming an opening 15a having a width of about 100 μm. Further, as shown in FIG. 19H, an electrode paste was applied to the region pattern including the opening 15a by screen printing, and calcined at 800 ° C, whereby the n-type contact electrode 16 and the p-type contact electrode 17 were formed.

如此,製造圖17及圖18所示的背面接合型太陽電池 10。n型區域12及p型區域13是在切口部18的跟前沿著基板11的外周形狀而結束,可有效地活用基板11的面積。而且,n型區域12及p型區域13不會與反極性的接觸電極重合,因此可獲得良好的發電性能。 Thus, the back junction type solar cell shown in FIGS. 17 and 18 is manufactured. 10. The n-type region 12 and the p-type region 13 are completed along the outer peripheral shape of the substrate 11 in front of the notch portion 18, and the area of the substrate 11 can be effectively utilized. Moreover, the n-type region 12 and the p-type region 13 do not overlap with the opposite polarity contact electrodes, so that good power generation performance can be obtained.

(比較例1) (Comparative Example 1)

除了n型及p型摻雜糊劑的塗佈步驟以外,與實施例1同樣地製造背面接合型太陽電池10。於n型及p型的各摻雜糊劑的塗佈步驟中,如圖22所示,使基板11呈平面狀地保持於平面狀的載台31h,使噴嘴34b在所有噴出口37容納於基板11面內的範圍內移動。於噴嘴34b的移動過程中,噴出口37與基板11的間隔始終固定。此時,塗佈開始位置與塗佈結束位置處的摻雜糊劑的圖案相同,因此,藉由對摻雜糊劑進行加熱而形成的n型固相擴散源24與p型固相擴散源25有效地鄰接的面積比實施例1少,發電效率下降。 The back surface bonding type solar cell 10 was produced in the same manner as in Example 1 except for the application steps of the n-type and p-type dopant pastes. In the application step of the n-type and p-type dopant pastes, as shown in FIG. 22, the substrate 11 is held in a planar shape on the planar stage 31h, and the nozzles 34b are accommodated in all the discharge ports 37. The substrate 11 moves in the range within the plane. During the movement of the nozzle 34b, the interval between the discharge port 37 and the substrate 11 is always fixed. At this time, the pattern of the doping paste at the application start position and the application end position is the same, and therefore, the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source formed by heating the dopant paste are formed. The area of 25 effectively adjacent is smaller than that of the first embodiment, and the power generation efficiency is lowered.

(比較例2) (Comparative Example 2)

除了n型及p型摻雜糊劑的塗佈步驟以外,與實施例1同樣地製造背面接合型太陽電池10。於n型及p型的各摻雜糊劑的塗佈步驟中,如圖23所示,使基板11呈平面狀地保持於平面狀的載台31h,使具有排列在一直線上的多個噴出口37的噴嘴34a,在所有噴出口37容納於基板11面內的範圍內移動。於噴嘴34a的移動過程中,噴出口37與基板11的間隔始終固定。此時,n型固相擴散源24與p型固相擴散源25有效地鄰接的面積比實施例1少,發電效率下降。 The back surface bonding type solar cell 10 was produced in the same manner as in Example 1 except for the application steps of the n-type and p-type dopant pastes. In the application step of the n-type and p-type dopant pastes, as shown in FIG. 23, the substrate 11 is held in a planar shape on the planar stage 31h so as to have a plurality of sprays arranged in a line. The nozzle 34a of the outlet 37 moves in a range in which all of the discharge ports 37 are housed in the plane of the substrate 11. During the movement of the nozzle 34a, the interval between the discharge port 37 and the substrate 11 is always fixed. At this time, the area in which the n-type solid phase diffusion source 24 and the p-type solid phase diffusion source 25 are effectively adjacent to each other is smaller than that in the first embodiment, and the power generation efficiency is lowered.

(比較例3) (Comparative Example 3)

除了n型及p型摻雜糊劑的塗佈步驟以外,與實施例1同樣地製造背面接合型太陽電池10。於n型及p型的各摻雜糊劑的塗佈步驟中,如圖24所示,使用具有排列在大致一直線上的多個噴出口37的噴嘴34a,自噴出口37與基板11的端部大致一致的位置開始塗佈,並使噴嘴34a移動至基板11的相反側的端部為止。於噴嘴34a的移動過程中,噴出口37與基板11的間隔始終固定。 The back surface bonding type solar cell 10 was produced in the same manner as in Example 1 except for the application steps of the n-type and p-type dopant pastes. In the application step of each of the n-type and p-type dopant pastes, as shown in FIG. 24, a nozzle 34a having a plurality of discharge ports 37 arranged in a substantially straight line is used, and the end portions of the substrate 11 and the substrate 11 are used. The application is started at substantially the same position, and the nozzle 34a is moved to the end on the opposite side of the substrate 11. During the movement of the nozzle 34a, the interval between the discharge port 37 and the substrate 11 is always fixed.

此時,自開始噴嘴34a的移動及糊劑35的噴出,直至通過切口部18上的噴嘴34a的左右端部的噴出口37到達基板11上部為止的期間內,於噴出口37的前端,積留增大,該積留附著於切口部18附近的基板11上的塗佈開始位置。其結果,在n型固相擴散源24或p型固相擴散源25的端部,產生比原本的設計形成得更大的增大部26,與實施例1相比,發電效率及可靠性大 幅下降。進而,n型區域12及p型區域13在基板11的端部重合於反極性的接觸電極,因此有時會通過保護膜15的不完全部分而產生短路。 At this time, the movement from the start nozzle 34a and the discharge of the paste 35 are accumulated in the front end of the discharge port 37 until the discharge port 37 at the left and right end portions of the nozzle 34a on the slit portion 18 reaches the upper portion of the substrate 11. The increase is increased, and the accumulation is adhered to the application start position on the substrate 11 in the vicinity of the notch portion 18. As a result, at the end of the n-type solid phase diffusion source 24 or the p-type solid phase diffusion source 25, an enlarged portion 26 which is formed larger than the original design is produced, and power generation efficiency and reliability are higher than those of the first embodiment. Big The decline. Further, since the n-type region 12 and the p-type region 13 are overlapped with the opposite-polarity contact electrode at the end portion of the substrate 11, a short circuit may occur due to an incomplete portion of the protective film 15.

(實施例2) (Example 2)

除了n型及p型摻雜糊劑的塗佈步驟與基板11的形狀以外,與實施例1同樣地製造背面接合型太陽電池10。於本實施例2中,分別塗佈n型及p型摻雜糊劑時,適用實施方式4的塗佈方法。 The back surface bonding type solar cell 10 was produced in the same manner as in Example 1 except for the application steps of the n-type and p-type dopant pastes and the shape of the substrate 11. In the second embodiment, when the n-type and p-type dopant pastes were applied, the coating method of the fourth embodiment was applied.

如圖25A所示,對於厚度200μm的基板11,以沿著n型及p型摻雜糊劑的塗佈結束位置的方式,設置寬1.5mm、高度40μm的階差100。使該基板11平面狀地吸附保持於呈平面狀的載台31d。 As shown in FIG. 25A, for the substrate 11 having a thickness of 200 μm, a step 100 having a width of 1.5 mm and a height of 40 μm was provided so as to be along the application end position of the n-type and p-type doping paste. The substrate 11 is adsorbed and held in a planar shape on the stage 31d which is planar.

在此狀態下,將以沿著基板11的外周形狀的方式排列有多個噴出口37的噴嘴34d,與基板11的一邊平行地配置,從自基板11的外周算起為1.5mm內側的位置開始噴嘴34d的移動,於基板11上呈條紋狀地塗佈n型摻雜糊劑。於塗佈結束位置,利用因基板11上所設的階差100而噴出口37與基板11的間隔變寬的現象來使液珠中斷,藉此來結束n型摻雜糊劑的塗佈。隨後,藉由對基板11進行加熱,從而形成n型固相擴散源24。藉此,如圖25B所示,可使條紋狀的n型固相擴散源24的結束位置大致一致於基板11的外周形狀。 In this state, the nozzles 34d having the plurality of discharge ports 37 arranged along the outer peripheral shape of the substrate 11 are arranged in parallel with one side of the substrate 11, and are located 1.5 mm inside from the outer periphery of the substrate 11. The movement of the nozzle 34d is started, and the n-type dopant paste is applied to the substrate 11 in a stripe shape. At the application end position, the liquid bead is interrupted by the phenomenon that the interval between the discharge port 37 and the substrate 11 is widened by the step difference 100 provided on the substrate 11, thereby ending the application of the n-type dopant paste. Subsequently, the substrate 11 is heated to form an n-type solid phase diffusion source 24. Thereby, as shown in FIG. 25B, the end position of the stripe-shaped n-type solid phase diffusion source 24 can be made substantially uniform to the outer peripheral shape of the substrate 11.

繼而,如圖25C所示,於n型固相擴散源24的條紋的間隙內,呈條紋狀地塗佈p型摻雜糊劑,進而,對基板11進行加 熱,藉此形成圖25D所示的p型固相擴散源25。再者,除了將基板11與圖25A上下反向地配置於載台31d以外,p型摻雜糊劑的塗佈步驟與n型摻雜糊劑的塗佈步驟相同。 Then, as shown in FIG. 25C, a p-type dopant paste is applied in a stripe shape in the gap of the stripe of the n-type solid phase diffusion source 24, and further, the substrate 11 is applied. Heat, thereby forming the p-type solid phase diffusion source 25 shown in Fig. 25D. In addition, the step of applying the p-type dopant paste is the same as the step of applying the n-type dopant paste, except that the substrate 11 is placed on the stage 31d in the reverse direction of FIG. 25A.

藉由對如此般設於基板11上的n型固相擴散源24及p 型固相擴散源25進行加熱、以使摻質固相擴散而形成的n型區域12及p型區域13,是在切口部18的跟前,以沿著基板11的外周形狀的形狀而開始及結束,可有效地活用基板11的面積。而且,n型區域12及p型區域13不會與反極性的接觸電極重合,因此可獲得與實施例1同等的良好的發電性能。 By the n-type solid phase diffusion sources 24 and p thus provided on the substrate 11. The n-type region 12 and the p-type region 13 which are formed by heating the solid phase diffusion source 25 to diffuse the dopant solid phase start in front of the notch portion 18 and along the shape of the outer peripheral shape of the substrate 11 and At the end, the area of the substrate 11 can be effectively utilized. Further, since the n-type region 12 and the p-type region 13 do not overlap with the reverse polarity contact electrode, good power generation performance equivalent to that of the first embodiment can be obtained.

(實施例3) (Example 3)

除了n型及p型摻雜糊劑的塗佈步驟與基板11的形狀以外,與實施例1同樣地製造背面接合型太陽電池10。於本實施例2中,分別塗佈n型及p型摻雜糊劑時,適用實施方式3的變形例2的塗佈方法。 The back surface bonding type solar cell 10 was produced in the same manner as in Example 1 except for the application steps of the n-type and p-type dopant pastes and the shape of the substrate 11. In the second embodiment, when the n-type and p-type dopant pastes were applied, the coating method of the second modification of the third embodiment was applied.

如圖26A所示,使基板11呈平面狀地吸附保持於平面狀的載台31g。而且,準備噴嘴34g,該噴嘴34g一分為三成:對應於塗佈開始位置側的切口部18的斜邊而排列有噴出部37的左噴嘴部34g(L)及右噴嘴部34g(R)與中央噴嘴部34g(C)。 As shown in FIG. 26A, the substrate 11 is adsorbed and held in a planar shape on the stage 31g. Further, the nozzle 34g is prepared, and the nozzle 34g is divided into three parts: a left nozzle portion 34g (L) and a right nozzle portion 34g (R) in which the discharge portion 37 is arranged in correspondence with the oblique side of the notch portion 18 on the application start position side. And the central nozzle portion 34g (C).

以中央噴嘴部34g(C)與基板11的一邊平行的方式配置噴嘴34g,從自基板11的外周算起為1.5mm內側的位置開始噴嘴34g的移動,於基板11上呈條紋狀地塗佈n型摻雜糊劑。於塗佈結束位置處,使左噴嘴部34g(L)及右噴嘴部34g(R)自端部 側,朝與紙面垂直的方向(Z方向)以100μm/s的速度逐漸上升,最終,使左噴嘴部34g(L)的左端及右噴嘴部34g(R)的右端較中央噴嘴部34g(C)上升100μm。藉由如此般利用噴出口37與基板11的間隔變寬的現象來使液珠中斷,從而結束n型摻雜糊劑的塗佈。藉此,如圖26B所示,可使n型摻雜糊劑的結束位置大致一致於基板11的外周形狀。隨後,對基板11進行加熱,藉此形成n型固相擴散源24。 The nozzle 34g is disposed such that the central nozzle portion 34g (C) is parallel to one side of the substrate 11, and the nozzle 34g is moved from a position inside the outer circumference of the substrate 11 to a position of 1.5 mm, and is applied to the substrate 11 in a stripe shape. N-type dopant paste. At the coating end position, the left nozzle portion 34g (L) and the right nozzle portion 34g (R) are made from the end portion. On the side, the direction perpendicular to the paper surface (Z direction) is gradually increased at a speed of 100 μm/s, and finally, the left end of the left nozzle portion 34g (L) and the right end of the right nozzle portion 34g (R) are made closer to the center nozzle portion 34g (C). ) rises by 100μm. By such a phenomenon that the distance between the discharge port 37 and the substrate 11 is widened, the liquid bead is interrupted, and the application of the n-type dopant paste is completed. Thereby, as shown in FIG. 26B, the end position of the n-type dopant paste can be made substantially uniform to the outer peripheral shape of the substrate 11. Subsequently, the substrate 11 is heated, thereby forming an n-type solid phase diffusion source 24.

繼而,如圖26C所示,於n型固相擴散源24的條紋的 間隙內,呈條紋狀地塗佈p型摻雜糊劑,進而,對基板11進行加熱,藉此形成圖26D所示的p型固相擴散源25。再者,除了將基板11與圖26A上下反向地配置於載台31g以外,p型摻雜糊劑的塗佈步驟與n型摻雜糊劑的塗佈步驟相同。 Then, as shown in FIG. 26C, the stripe of the n-type solid phase diffusion source 24 In the gap, a p-type dopant paste is applied in a stripe shape, and further, the substrate 11 is heated to form a p-type solid phase diffusion source 25 shown in FIG. 26D. In addition, the step of applying the p-type doping paste is the same as the step of applying the n-type doping paste, except that the substrate 11 is placed on the stage 31g in the reverse direction of FIG. 26A.

藉由對如此般設於基板11上的n型固相擴散源24及p 型固相擴散源25進行加熱、以使摻質固相擴散而形成的n型區域12及p型區域13,是在切口部18的跟前,以沿著基板11的外周形狀的形狀而開始及結束,可有效地活用基板11的面積。而且,n型區域12及p型區域13不會與反極性的接觸電極重合,因此可獲得與實施例1同等的良好的發電性能。 By the n-type solid phase diffusion sources 24 and p thus provided on the substrate 11. The n-type region 12 and the p-type region 13 which are formed by heating the solid phase diffusion source 25 to diffuse the dopant solid phase start in front of the notch portion 18 and along the shape of the outer peripheral shape of the substrate 11 and At the end, the area of the substrate 11 can be effectively utilized. Further, since the n-type region 12 and the p-type region 13 do not overlap with the reverse polarity contact electrode, good power generation performance equivalent to that of the first embodiment can be obtained.

11a‧‧‧基板 11a‧‧‧Substrate

19‧‧‧塗佈對象區域 19‧‧‧Coating area

31a‧‧‧載台 31a‧‧‧ stage

34a‧‧‧噴嘴 34a‧‧‧Nozzles

37‧‧‧噴出口 37‧‧‧Spray outlet

C1‧‧‧一點鏈線 C1‧‧‧Little chain

P‧‧‧塗佈結束位置 P‧‧‧ Coating end position

Claims (21)

一種塗佈方法,其特徵在於包括:液珠形成步驟,自噴嘴的噴出口噴出塗液,於基板與上述噴出口之間形成包含上述塗液的液珠;以及塗佈步驟,使上述噴嘴相對於上述基板而相對移動,以於上述基板上塗佈上述塗液,於上述塗佈步驟中,藉由改變上述噴嘴的上述噴出口與上述基板的間隔,從而調整上述基板上的上述塗液的塗佈結束位置。 A coating method comprising: a bead forming step of ejecting a coating liquid from a discharge port of a nozzle, forming a liquid bead comprising the coating liquid between the substrate and the ejection port; and a coating step of making the nozzle relatively The coating liquid is relatively moved on the substrate to apply the coating liquid on the substrate, and in the coating step, the coating liquid on the substrate is adjusted by changing a distance between the discharge port of the nozzle and the substrate. Coating end position. 如申請專利範圍第1項所述的塗佈方法,其中上述噴嘴具有狹縫狀的上述噴出口,上述塗佈步驟是自上述基板的一端朝向另一端,藉由具有上述狹縫狀的上述噴出口的上述噴嘴,來將上述塗液塗佈成寬幅的圖案,上述狹縫的形狀不同於上述塗佈結束位置的形狀。 The coating method according to claim 1, wherein the nozzle has a slit-shaped discharge port, and the coating step is from the one end of the substrate toward the other end, and the spray having the slit shape The above-mentioned nozzle is discharged to apply the coating liquid into a wide pattern, and the shape of the slit is different from the shape of the coating end position. 如申請專利範圍第1項所述的塗佈方法,其中上述噴嘴具有分散排列的多個上述噴出口,上述塗佈步驟是自上述基板的一端朝向另一端,藉由具有多個上述噴出口的上述噴嘴,來將上述塗液塗佈成條紋狀的圖案,多個上述噴出口的排列不同於上述塗佈結束位置的排列。 The coating method according to claim 1, wherein the nozzle has a plurality of the discharge ports arranged in a dispersed manner, and the coating step is from one end of the substrate toward the other end, by having a plurality of the discharge ports In the nozzle, the coating liquid is applied in a stripe pattern, and the arrangement of the plurality of ejection ports is different from the arrangement in the coating end position. 如申請專利範圍第2項所述的塗佈方法,其中上述噴出口是呈沿著直線、曲線或者至少於1處部位彎曲的線而設置的狹縫狀。 The coating method according to claim 2, wherein the discharge port is a slit shape provided along a line that is curved along a straight line, a curved line, or at least one portion. 如申請專利範圍第3項所述的塗佈方法,其中多個上述噴出口是沿著直線、曲線或者至少於1處部位彎曲的線而排列。 The coating method according to claim 3, wherein the plurality of the discharge ports are arranged along a straight line, a curved line, or a line bent at at least one portion. 如申請專利範圍第2項或第4項所述的塗佈方法,其中上述塗佈步驟是對上述基板上的由閉合線圍成的區域塗佈上述塗液,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,上述狹縫狀的上述噴出口是呈沿著上述區域中的上述塗液的塗佈開始位置的形狀。 The coating method according to Item 2 or 4, wherein the coating step is to apply the coating liquid to a region surrounded by a closed line on the substrate, wherein the closed line comprises a polygonal shape and a closed curve. Alternatively, in combination with a straight line and a curved line, the slit-shaped discharge port has a shape along a coating start position of the coating liquid in the region. 如申請專利範圍第3項或第5項所述的塗佈方法,其中上述塗佈步驟是對上述基板上的由閉合線圍成的區域塗佈上述塗液,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,多個上述噴出口是沿著上述區域中的上述塗液的塗佈開始位置而排列。 The coating method according to Item 3 or 5, wherein the coating step is to apply the coating liquid to a region enclosed by a closed line on the substrate, wherein the closed line comprises a polygonal shape and a closed curve. Alternatively, in combination with a straight line and a curved line, the plurality of discharge ports are arranged along the application start position of the coating liquid in the above region. 如申請專利範圍第6項所述的塗佈方法,其中上述基板具有包含閉合線的外周形狀,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合,上述區域的外周形狀是呈沿著上述基板的外周形狀的形狀。 The coating method according to claim 6, wherein the substrate has a peripheral shape including a closed line, and the closed line includes a polygon, a closed curve, or a combination of a straight line and a curved line, and the outer peripheral shape of the region is along the above The shape of the outer peripheral shape of the substrate. 如申請專利範圍第7項所述的塗佈方法,其中上述基板具有包含閉合線的外周形狀,上述閉合線包含多邊形、閉合曲線或者直線與曲線的組合, 上述區域的外周形狀是呈沿著上述基板的外周形狀的形狀。 The coating method according to claim 7, wherein the substrate has a peripheral shape including a closed line, and the closed line includes a polygon, a closed curve, or a combination of a straight line and a curved line. The outer peripheral shape of the above region is a shape along the outer peripheral shape of the substrate. 如申請專利範圍第1項所述的塗佈方法,其中藉由使上述塗佈結束位置相對於上述基板中的上述塗液的塗佈對象區域而下降,從而改變上述噴嘴的上述噴出口與上述基板的間隔。 The coating method according to the first aspect of the invention, wherein the coating end position is lowered with respect to a coating target region of the coating liquid in the substrate, thereby changing the discharge port of the nozzle and the above The spacing of the substrates. 如申請專利範圍第10項所述的塗佈方法,其中藉由使上述基板的一部分自保持上述基板的載台的端部突出,並對上述一部分施加朝下的力,從而使上述塗佈結束位置下降。 The coating method according to claim 10, wherein a part of the substrate protrudes from an end portion of a stage on which the substrate is held, and a downward force is applied to the portion to end the coating. The position is down. 如申請專利範圍第10項所述的塗佈方法,其中藉由對上述基板設置階差或者傾斜,從而使上述塗佈結束位置下降。 The coating method according to claim 10, wherein the coating end position is lowered by setting a step or a tilt to the substrate. 如申請專利範圍第1項所述的塗佈方法,其中藉由使上述噴嘴的至少一部分朝上述噴嘴遠離上述基板的方向移動,從而改變上述噴嘴的上述噴出口與上述基板的間隔。 The coating method according to claim 1, wherein the distance between the discharge port of the nozzle and the substrate is changed by moving at least a portion of the nozzle toward the nozzle away from the substrate. 一種塗佈裝置,其特徵在於包括:載台,保持基板;噴嘴,自噴出口噴出塗液;使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動的單元;以及改變上述噴嘴的上述噴出口與上述基板的間隔的單元。 A coating apparatus comprising: a stage holding a substrate; a nozzle ejecting a coating liquid from the ejection outlet; a unit moving relative to at least one of the substrate and the nozzle relative to the other; and changing the above a unit that is spaced apart from the substrate by the discharge port of the nozzle. 如申請專利範圍第14項所述的塗佈裝置,其中 上述噴嘴具有狹縫狀的上述噴出口,藉由使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動,從而自上述基板的一端朝向另一端,藉由具有上述狹縫狀的上述噴出口的上述噴嘴,來將上述塗液塗佈成寬幅的圖案,上述狹縫的形狀不同於上述塗佈結束位置的形狀。 The coating device of claim 14, wherein The nozzle has a slit-shaped discharge port, and at least one of the substrate and the nozzle is relatively moved relative to the other, and the slit is provided from one end of the substrate toward the other end. In the nozzle of the discharge port, the coating liquid is applied to a wide pattern, and the shape of the slit is different from the shape of the coating end position. 如申請專利範圍第14項所述的塗佈裝置,其中上述噴嘴具有分散排列的多個上述噴出口,藉由使上述基板與上述噴嘴中的至少任一者相對於另一者而相對移動,從而將上述塗液塗佈成條紋狀的圖案,多個上述噴出口的排列不同於上述塗佈結束位置的排列。 The coating device according to claim 14, wherein the nozzle has a plurality of the discharge ports arranged in a distributed manner, and at least one of the substrate and the nozzle is relatively moved relative to the other, Thereby, the coating liquid is applied in a stripe pattern, and the arrangement of the plurality of discharge ports is different from the arrangement of the coating end positions. 如申請專利範圍第14項至第16項中任一項所述的塗佈裝置,其中上述載台具有基板載置面,上述基板載置面呈相對於上述噴嘴的上述噴出口為凸的非平面狀,改變上述噴嘴的上述噴出口與上述基板的間隔的單元是保持機構,上述保持機構相對於上述基板載置面來保持上述基板。 The coating apparatus according to any one of claims 14 to 16, wherein the stage has a substrate mounting surface, and the substrate mounting surface is convex with respect to the ejection port of the nozzle The unit that changes the distance between the discharge port of the nozzle and the substrate is a holding mechanism, and the holding mechanism holds the substrate with respect to the substrate mounting surface. 如申請專利範圍第14項至第16項中任一項所述的塗佈裝置,其中以上述基板的一部分自上述載台的端部突出的方式,而將上述基板配置於上述載台,改變上述噴嘴的上述噴出口與上述基板的間隔的單元是保持機構,上述保持機構對上述基板的突出部施加朝下的力,且將上 述基板保持於上述載台。 The coating device according to any one of claims 14 to 16, wherein the substrate is placed on the stage so that a part of the substrate protrudes from an end of the stage, and the substrate is changed. The unit in which the discharge port of the nozzle is spaced from the substrate is a holding mechanism, and the holding mechanism applies a downward force to the protruding portion of the substrate, and the upper portion The substrate is held on the stage. 如申請專利範圍第14項至第16項中任一項所述的塗佈裝置,其中改變上述噴嘴的上述噴出口與上述基板的間隔的單元是使上述噴嘴的至少一部分朝上述噴嘴遠離上述基板的方向移動的機構。 The coating device according to any one of claims 14 to 16, wherein the unit for changing a distance between the discharge port of the nozzle and the substrate is such that at least a portion of the nozzle faces the nozzle away from the substrate The direction of the moving mechanism. 如申請專利範圍第15項所述的塗佈裝置,其中上述狹縫狀的上述噴出口是呈沿著直線、曲線或者至少於1處部位彎曲的線而設置的狹縫狀。 The coating apparatus according to claim 15, wherein the slit-shaped discharge port has a slit shape provided along a line curved, a curved line, or a line bent at at least one portion. 如申請專利範圍第16項所述的塗佈裝置,其中多個上述噴出口是沿著直線、曲線或者至少於1處部位彎曲的線而排列。 The coating apparatus according to claim 16, wherein the plurality of the discharge ports are arranged along a line curved, curved, or curved at least at one location.
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