CN117836933A - 功率电子组件 - Google Patents

功率电子组件 Download PDF

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CN117836933A
CN117836933A CN202280057652.1A CN202280057652A CN117836933A CN 117836933 A CN117836933 A CN 117836933A CN 202280057652 A CN202280057652 A CN 202280057652A CN 117836933 A CN117836933 A CN 117836933A
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insulator
power electronic
structures
electronic assembly
power
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M·海曼
R·洛尔斯
B·穆勒
C·拉杜奇
S·施泰格迈尔
J·斯特洛吉斯
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Siemens AG
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Abstract

本发明涉及一种功率电子组件(100)和一种用于生产用于功率电子组件(100)的半成品的方法。为了说明改进的功率电子组件(100)，提出，组件(100)具有基底(20)，该基底具有金属化部(30)，该金属化部通过中间空间(40)形成彼此分开的第一结构和第二结构(35，36)，并且该金属化部具有至少300μm的厚度(D30)，其中，在第一结构(35)上施加有功率半导体(50)。具有至少50W/mK的导热率的电绝缘体(42)相对于中间空间(40)至少逐段地布置为，使得邻接到相应的中间空间(40)的结构(35，36)通过绝缘体(42)热连接。

Description

功率电子组件
技术领域
本发明涉及一种功率电子组件。本发明还涉及一种用于生产用于功率电子组件的半成品的方法。
背景技术
这种功率电子组件例如在用于变流器的功率模块中使用。在此，应用可以位于电气驱动技术、电压转换或能源技术的领域中。
在当今用于功率电子组件的电路载体中，开关部件(IGBT、MOSFETS等)位于金属导体轨道上，该金属导体轨道一方面具有传导电流的任务，另一方面还负责散发半导体的废热并将其引导至冷却器。铜层越厚，横向热量分配在此越有效。电路在运行中通常具有高的温差，即半导体芯片附近的热区域或结构和通常进一步远离芯片或与芯片热隔离的较冷区域或结构(例如栅极触点、发射极感测、分流器触点等)。这些温差导致现在需要使用底板进行温度分配，或者冷却器本身必须开销更高地设计。
发明内容
本发明要解决的技术问题在于，说明一种改进的功率电子组件。
该技术问题通过具有权利要求1中说明的特征的功率电子组件来解决。功率电子组件在此包括具有金属化部的基底。金属化部被结构化地设计。为了结构化，金属化部具有中间空间，通过该中间空间形成彼此分开的第一结构和第二结构。金属化部在此具有至少300μm的厚度。在进一步优选的实施方式中，金属化部具有至少0.5或1mm、2mm、3mm或4mm的厚度。第一金属结构在此具有功率半导体。功率半导体通常接合、例如焊接或烧结到第一结构。因此，第一结构设有发热构件并且具有比第二结构更高的热负荷，该第二结构优选地不具有功率半导体。在当前情况下，例如诸如IGBT、MOSFET、二极管或其他具有大带隙的半导体开关的开关部件和非开关部件可以用作功率半导体。
此外，根据本发明，电绝缘体相对于中间空间至少逐段地布置为，使得分别邻接到中间空间的结构通过绝缘体热连接。绝缘体在此具有至少50W/mK的导热率。绝缘体尤其具有至少100W/mK、200W/mK或500W/mK的导热率。这种高导热率确保了尽管面积相对较小，但仍实现从第一结构的高的散热。结果是在整个功率电子组件上的更均匀的热量分配。在此可以使用导热的金刚石材料和特定的陶瓷(Si3N4和AlN)作为材料。
这种具有金属化部的基底例如可以被设计为厚铜基底。厚铜基底(也称为有机DBC)被理解为电路载体，该电路载体具有厚度>300μm(通常为1-4mm)的金属(铜、铝等)，并且该电路载体的绝缘材料尤其由塑料或塑料复合材料组成。一种示例是有机直接铜键合(ODBC，organic direct copper bond)。通过该塑料可以平衡显著更高的热机械力(例如由于CTE不匹配)并且相应地实现高的金属层厚度。与陶瓷基底(DBC、AMB)相比，较大的金属化部厚度或铜厚度在该陶瓷基底中可能导致更快的故障(例如陶瓷的贝壳状断裂)，塑料已证明其作为基底材料的自身优势。
除非另有说明，导热率在此指绝缘体在20℃环境温度下的导热率。
在另一种实施方式中，金属化部至多7mm、尤其至多4mm厚。此外，中间空间具有至少0.1mm并且至多8mm的宽度。中间空间优选地具有0.3至5mm的宽度。
在另一种实施方式中，绝缘体是凹槽的高度的50％。凹槽的高度对应于金属化部的高度。在另外的实施方式中，绝缘体可以填充凹槽的高度的80％-100％。也可能的是，绝缘体从凹槽中稍微突出。如果在金属化部平面中观察凹槽，则绝缘体在此优选地可以覆盖位于待热连接的两个结构之间的凹槽的50％，以便实现尽可能好的热传递。
在一种特别优选的实施方式中，第二结构不具有功率半导体。这种第二结构通常被设计为用于功率接头的接触并且例如通过键合线与所使用的功率半导体的上侧电接触。从热学角度来看，第二结构负荷较轻，因此具有显著的排热潜力。因此，可以有利地在整个功率电子组件的排热中包括第二结构。
在另一种特别优选的实施方式中，第一结构中的至少一个第一结构与第二结构中的至少一个第二结构通过绝缘体热连接。换句话说，那些从热学来看具有不同负荷的结构相互连接。也就是说，相当热或热的第一结构与第二结构连接，该第一结构具有功率半导体，而第二结构又不具有功率半导体。因此，功率电子组件上的温度分配更均匀，并且散热因此可以被改善，并且可以更好地使用冷却体的现有面积。
在另一种实施方式中，功率电子组件具有分流器，该分流器与第一结构之一和第二结构之一电接触，该第一结构之一和第二结构之一通过绝缘体之一彼此热连接。这具有很大的优点，即理想情况下在其两个电接触点处具有相似温度水平的分流器现在由于通过绝缘体的热耦合而在其电接触点处具有特别均匀的温度分配。这通过分流器实现显著更准确的电流测量。此外，在电流测量时可以省去对温度影响的补偿。
在另一种实施方式中，绝缘体具有金刚石。金刚石可以在工业规模上以人工产生的工业金刚石的形式获得，在此期间也可以生产成更大的层(CVD、PVD等)。金刚石在非常良好的电绝缘性能的情况下具有高达2000W/mK的极高的导热能力，相应地在这种情况下非常适合作为绝缘体。在此例如可以使用经金属化的金刚石板。还可以想到，例如对于不太苛刻的要求，提供金刚石粉末填充的绝缘体或陶瓷绝缘体(例如Si3N4、AlN等)。
在另一种实施方式中，绝缘体由金刚石制成。实现了在电气组件上的均匀的热量分配的、由金刚石制成的绝缘体尤其对于具有高的功率特性(Leistungsprofil)和高的功率密度的应用而言特别有利。
在另一种实施方式中，绝缘体在中间空间中和/或在基底中布置为，使得绝缘体分别与热连接的结构直接接触。可以想到的是，这仅在一侧与结构之一或在两侧与两个结构进行。直接接触具有优点，即不需要引入另外的材料。
在另一种实施方式中，绝缘体通过导热的聚合物和/或树脂与邻接的结构热连接。这种聚合物和/或树脂例如可以被设计为聚酰亚胺或填充环氧树脂材料。在此，例如诸如氮化铝、氮化硼、Si3N4和/或Al2O3之类的陶瓷颗粒适合作为填充颗粒。从绝缘体到结构的连接可以被设计为非电绝缘的(即至少部分导电)，因为绝缘已经由绝缘体提供。金属和基于石墨的填料也是可以想到的。通过非常薄层的导热的聚合物和/或树脂层连接绝缘体具有很大的优点，即恰恰当组件上的热负荷发生变化时，绝缘体和分别邻接的结构之间的热接触更好地承受由CTE差异引起的应力。这恰恰对于组件的热变形是有利的。绝缘体还可以通过金属连接(例如焊接层或烧结层)与邻接的结构连接。
在另一种实施方式中，绝缘体在其端部处具有彼此电绝缘的金属化部、例如两个彼此分开的经金属化的面。此外，绝缘体相对于结构在上侧以其金属化部接合到结构。焊接或烧结在此尤其合适。
在另一种实施方式中，功率电子组件被设计为半桥。半桥在此具有至少两个被设计为半导体开关的功率半导体。功率半导体在此分别布置在第一结构上，其中，布置有功率半导体开关的第一结构分别通过绝缘体与第二结构热连接。因此，例如半导体开关之一是半桥的高侧并且半导体开关之一是半桥的低侧。两者(高侧和低侧)在此都与应力较小的第二结构热连接，这导致，产生的废热在整个组件上更均匀地分配。热量在组件上的更均匀的分配在此可以导致，模块或组件可以提供更高的功率，或者可以在保持相同功率的情况下使用更小的半导体开关。应当理解，半桥在此可以扩展到全桥或三相配置。
该技术问题还通过一种用于生产用于根据本发明的组件的半成品的方法来解决。为此，提供用于基底、结构和绝缘体的半成品。这种半成品例如可以是铜箔和塑料预浸料。绝缘体在此例如可以作为金刚石板存在。半成品然后例如彼此上下地堆叠，并且绝缘体已经布置在形成中间空间的位置处。半成品可以在下一步骤中被压制，使得半成品彼此连接，并且使得在随后形成的结构和绝缘体之间形成热接触。
附图说明
下面根据附图中所示的实施例更详细地描述和阐述本发明。在附图中分别示意性地：
图1示出了功率电子组件的实施方式，
图2示出了图1中的功率电子组件的截面，
图3示出了图2的横截面的替换方案，
图4示出了用于生产基底的可能性，并且
图5示出了用于生产基底的另一种可能性。
具体实施方式
图1示出了具有基底20的功率电子组件100，在该基底上施加有金属化部30。金属化部30在此具有第一结构35和第二结构36。在当前情况下，功率电子组件100被设计为具有IGBT、二极管和分流器的半桥形式的功率电子电路。为此目的，第一结构35具有功率半导体50。该功率半导体50产生必须从第一结构35导走的废热。为了增加用于导热的面积，设置与第二结构36的热连接，该热连接通过具有高导热率的电绝缘体42设计。良好导热的绝缘体42在此在第一结构35和第二结构36之间的中间空间40中布置为，使得热接触发生在热的第一结构35和较冷的第二结构36之间。从整个功率电子组件100看来，热扩散显著改善，这大大简化了热量的散发。在当前情况下，功率半导体与键合线52接触，但也可以与其他接触器件连接。
在本示例中，功率电子组件具有分流器60。在这种情况下，分流器60被布置为，使得该分流器将第一结构35与第二结构36之一连接，以进行电流测量。由于为了进行电流测量，分流器60的两个触点之间的尽可能均匀的温度分配是必要的，因此特别有利的是，分流器60在第一结构35和第二结构36上布置为，使得该第一结构和第二结构分别与良好导热的绝缘体42连接。由此显著减小了热的第一结构35和第二结构36之间的温度差异。
图2示出了图1中所示的功率电子组件100的截面。附图标记在此与图1类似地设置。基底绝缘体20具有大约20μm至1000μm的厚度D20。金属化部30具有大约300μm至4mm的厚度D30。中间空间40具有大约200μm至5mm的宽度B40。根据本发明的绝缘体42在中间空间40中布置为，使得布置在中间的第一结构35(其又具有两个功率半导体50)通过绝缘体42与布置在边缘的第二结构36热连接。这导致功率电子组件中的显著更均匀的热量分配。
图3示出了如图2所示的横截面，其中，绝缘体42不布置在中间空间40中，而是桥状地跨越中间空间40。例如，该布置可以设置有经金属化的绝缘体42(金属化部在此位于相应的两个端部)，该绝缘体焊接到金属化部30上。因此也产生了显著改善的热扩散。
图4示意性地示出了在生产时以堆叠方式布置绝缘体42的可能性。绝缘体42在此被绝缘材料44(例如聚酰亚胺或填充环氧树脂材料)包围并且不直接接触金属化部30的第一结构35、36。在压制堆叠时，如图所示，在结构35、36和绝缘体42之间形成非常良好的热接触。绝缘材料44在此足够薄，以免危及结构35、36之间的良好热传递。
图5示出了图4所示的堆叠结构的替换方案。结构35、36在此与绝缘体42直接接触。在压制时，在此也得到结构35、36与绝缘体42之间的良好的热接触。
总结地说，本发明涉及一种功率电子组件100和一种用于生产用于功率电子组件100的半成品的方法。为了说明改进的功率电子组件100，提出，组件100具有基底绝缘体20，该基底绝缘体具有金属化部30，该金属化部形成通过中间空间40彼此分开的第一结构35和第二结构36并且具有至少300μm的厚度D30，其中，功率半导体50施加到第一结构35上。相对于中间空间40，具有至少50W/mK的导热率的电绝缘体42至少逐段地布置为，使得邻接到相应的中间空间40的结构35、36通过绝缘体42热连接。
附图标记列表
100 功率电子组件
20 基底绝缘体
D20基底绝缘体的厚度
30金属化部
D30金属化部的厚度
35 金属化部的第一结构
36 金属化部的第二结构
40 中间空间
B40 中间空间的宽度
42 绝缘体
44 绝缘材料
50 功率半导体
52 键合线
60 分流器

Claims (13)

1.一种功率电子组件(100)，包括具有金属化部(30)的基底(20)，所述金属化部通过中间空间(40)形成彼此分开的第一结构和第二结构(35，36)，并且所述金属化部具有至少300μm、尤其至少1mm或2mm的厚度(D30)，
其中，在所述第一结构(35)上施加有功率半导体(50)，
其中，具有至少50W/mK的导热率的电绝缘体(42)相对于所述中间空间(40)至少逐段地布置为，使得邻接到相应的中间空间(40)的结构(35，36)通过所述绝缘体(42)热连接。
2.根据权利要求1所述的功率电子组件(100)，其中，所述金属化部(30)具有至多7mm、尤其至多4mm的厚度(D30)。
3.根据权利要求1或2所述的功率电子组件(100)，其中，所述中间空间(40)具有0.1mm和8mm之间、尤其0.3mm和5mm之间的宽度(B40)。
4.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述第二结构(36)不具有功率半导体(50)。
5.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述第一结构(35)中的至少一个第一结构与所述第二结构(36)中的至少一个第二结构通过所述绝缘体(42)之一热连接。
6.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述功率电子组件具有分流器(60)，所述分流器与所述第一结构(35)之一和所述第二结构(36)之一电接触，所述第一结构之一和所述第二结构之一通过所述绝缘体(42)之一热连接。
7.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述绝缘体(42)具有金刚石。
8.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述绝缘体(42)由金刚石制成。
9.根据上述权利要求中任一项所述的功率电子组件(100)，
其中，所述绝缘体(42)在所述中间空间(40)中和/或在所述基底(20)中布置为，使得所述绝缘体(40)分别与热连接的结构(35，36)直接接触。
10.根据上述权利要求中任一项所述的功率电子组件(100)，
其中，所述绝缘体(42)分别通过导热的聚合物和/或树脂和/或金属连接而与邻接的结构(35，36)热连接。
11.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述绝缘体(42)在其端部处具有彼此电绝缘的金属化部，并且其中，所述绝缘体(42)在上侧利用所述金属化部接合到所述结构(35，36)。
12.根据上述权利要求中任一项所述的功率电子组件(100)，其中，所述功率电子组件被设计为半桥，所述半桥具有至少两个被设计为半导体开关的功率半导体(50)，所述功率半导体分别布置在第一结构(35)上，其中，所述半桥的第一结构(35)中的每个第一结构分别与第二结构(36)通过各一个绝缘体(42)热连接。
13.一种用于生产用于根据上述权利要求中任一项所述的功率电子组件(100)的半成品的方法，包括步骤：
-提供用于基底(20)、结构(35，36)和绝缘体(42)的半成品，
-对所述半成品进行压制，使得所述半成品彼此连接并且形成所述结构(35，36)和所述绝缘体(42)之间的热接触。
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