CN117832321A - Device and method for purifying impurities in silicon wafer - Google Patents
Device and method for purifying impurities in silicon wafer Download PDFInfo
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- CN117832321A CN117832321A CN202311611580.3A CN202311611580A CN117832321A CN 117832321 A CN117832321 A CN 117832321A CN 202311611580 A CN202311611580 A CN 202311611580A CN 117832321 A CN117832321 A CN 117832321A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 225
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 224
- 239000010703 silicon Substances 0.000 title claims abstract description 224
- 239000012535 impurity Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000007246 mechanism Effects 0.000 claims abstract description 104
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 239000007921 spray Substances 0.000 claims abstract description 23
- 238000006479 redox reaction Methods 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 29
- 238000005507 spraying Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 25
- 239000002002 slurry Substances 0.000 claims description 25
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 7
- 239000002699 waste material Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 235000012431 wafers Nutrition 0.000 description 182
- 239000007789 gas Substances 0.000 description 116
- 239000010408 film Substances 0.000 description 40
- 239000002184 metal Substances 0.000 description 17
- 238000005247 gettering Methods 0.000 description 13
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002912 waste gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a device and a method for purifying impurities in a silicon wafer, which belong to the technical field of photovoltaic solar panel production, wherein the device comprises a conveying mechanism which is arranged in a cavity and can be used for driving the silicon wafer to move in the cavity; the air ejector is positioned in the conveying mechanism, the tail end of the air ejector is connected with a spray head which is opposite to the conveying mechanism, and the spray head sprays wet gas towards the silicon wafer on the conveying mechanism; the temperature control mechanism is wrapped on the air jet pipe and used for heating the gas flowing through the air jet pipe to form damp and hot gas, and the damp and hot gas contacts the silicon wafer and then undergoes oxidation-reduction reaction with the silicon wafer at a preset temperature to form a layer of oxide film. By forming the oxide film on one side of the silicon wafer, the cost can be effectively reduced, and the production efficiency can be improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaic solar panel production, and particularly relates to a device and a method for purifying impurities in a silicon wafer.
Background
Fossil fuels refer to energy sources formed by compression and decomposition of animal and plant remains millions of years ago, including mainly coal, oil, and natural gas. They are an important source of energy for human social development, but also present a range of environmental and climate problems. The combustion of fossil fuels releases a large amount of carbon dioxide and other greenhouse gases, which in turn exacerbates global warming and climate change, and in the face of these problems, active search for alternative energy sources and energy conversion, active development of renewable energy sources, solar energy being an excellent renewable energy source.
Photovoltaic power generation at the present stage is already one of important renewable energy sources, and the solar energy utilization rate of people is low at present. In order to further improve the conversion efficiency of solar energy, a series of improvements are made on the quality of solar cells (silicon wafers), such as removal of metal impurities in the silicon wafers during production, and improvement of the purity of the silicon wafers. Currently, the main silicon wafer impurity removal methods mainly comprise a chain impurity removal method and a tubular impurity removal method. The chained impurity removing method mainly comprises four steps of phosphorus slurry coating, drying, phosphorus source diffusion and silicon wafer impurity absorption, wherein the phosphorus source diffusion and the silicon wafer impurity absorption are generally realized through one or more heating and annealing.
As chinese patent publication No. CN113257953a, 2021, 8, 13 discloses a method and apparatus for gettering N-type silicon wafer, comprising forming a phosphorus slurry layer on at least one surface of a silicon wafer; carrying out chained diffusion annealing on the silicon wafer with the phosphorus slurry layer, wherein the chained diffusion annealing comprises a heating stage, a constant temperature stage and a cooling stage, and the heating stage and the cooling stage respectively comprise a temperature shock degree not less than 30 ℃/min, so that the phosphorus slurry layer and impurities in the silicon wafer are mutually dissolved to form a phosphorus silicon gettering layer; and removing the phosphorus silicon gettering layer.
The invention uses the technology of spraying and superposing the chained diffusion annealing furnace on the phosphorus slurry layer to carry out phosphorus gettering, the spraying of the phosphorus slurry layer and the chained diffusion annealing furnace are integrated together, and the rapid annealing technology is used to fix and separate out metal impurities on the phosphorus silicon gettering layer. However, the above patent has high production cost by coating the phosphorus slurry layer on both sides, and the phosphorus silicon gettering layer needs to be removed on both sides, resulting in low production efficiency.
Disclosure of Invention
1. Problems to be solved
In order to solve or partially solve the defects of high production cost and low production efficiency of a chain type impurity removal method in the prior art, the invention provides a device and a method for purifying impurities in a silicon wafer, which can effectively reduce cost by forming an oxide film on one side of the silicon wafer, only remove one side of a phosphorus silicon gettering layer in the follow-up process, improve production efficiency and well solve the problems in the prior art.
2. Technical proposal
In order to solve the problems, the invention adopts the following technical scheme:
in one aspect, the present application provides a device for purifying impurities inside a silicon wafer, comprising:
the conveying mechanism is arranged in the cavity and used for driving the silicon wafer to move in the cavity;
the air ejector is positioned in the conveying mechanism, the tail end of the air ejector is connected with a spray head which is opposite to the conveying mechanism, and the spray head sprays wet gas towards the silicon wafer on the conveying mechanism;
the temperature control mechanism is wrapped around the air jet pipe or is positioned on the inner wall of the chamber and is used for heating the gas flowing in the air jet pipe to form damp and hot gas and heating the silicon wafer; and after the wet and hot gas contacts the silicon wafer, performing oxidation-reduction reaction with the silicon wafer to form a layer of oxide film.
Before the silicon wafer is sent into the chamber, the back surface of the silicon wafer is coated with a phosphorus slurry layer, and the front surface of the silicon wafer is not treated. When the silicon wafer is sent into the chamber, the front face faces the air ejector tube. The silicon chip is driven by the conveying mechanism to move. The air jet pipe jets damp and hot air to the front of the silicon slice. The hot and humid gas can assist in heating the silicon wafer, and can generate oxidation-reduction reaction on the surface of the silicon wafer to form a layer of oxide film. Because the metal impurities in the silicon wafer have different solubilities in different substances, an oxide film with high solubility for the metal impurities is introduced into the silicon wafer, and the metal impurities in the silicon wafer are adsorbed in the oxide film, so that the aim of deeply purifying the impurities in the silicon wafer can be fulfilled. And secondly, the oxide film can effectively reduce the corrosion rate of the silicon wafer in the later texturing process, so that a polishing structure layer is formed on one surface of the silicon wafer, the polishing structure layer has a planar structure and can reflect light, the light is reserved in the silicon wafer, and the light utilization rate of the silicon wafer is improved. Because only one side of the silicon wafer is coated with the phosphorus slurry layer, the other side is replaced by the oxide film, and only one side of the phosphorus silicon gettering layer is removed later, the production efficiency is improved.
Further, in the device for purifying impurities in a silicon wafer provided by the application, the air inlet end of the air ejector is communicated with the moisture mechanism, the moisture mechanism comprises a liquid bottle filled with water, an air inlet pipe and an air outlet pipe, one end of the air inlet pipe is connected with the air storage tank, and the other end of the air inlet pipe is inserted into the liquid bottle; the air outlet pipe is positioned on the water surface in the liquid bottle, and the other end of the air outlet pipe is communicated with the air inlet end of the air jet pipe. During operation, gas released by the gas storage tank enters the liquid bottle through the gas inlet pipe, enters the gas outlet pipe after being wetted by water, and then enters the gas spraying pipe from the gas outlet pipe. After the gas passes through the liquid bottle, water can be attached to the liquid bottle, so that the gas is wet, the water in the liquid bottle can also play a role in filtering, impurities in the gas are removed, and secondary pollution to the silicon wafer caused by the reaction of the gas on the surface of the silicon wafer is avoided.
Further, in the device for purifying impurities in the silicon wafer provided by the application, the gas spraying pipe comprises a main pipe body and a plurality of auxiliary pipe bodies, and the main pipe body extends along the conveying direction of the conveying mechanism; one end of each auxiliary pipe body is connected to the main pipe body in parallel and vertically, and the other end of each auxiliary pipe body extends into the cavity to above the conveying mechanism. Through a plurality of auxiliary pipe bodies, gas can be sprayed on the surface of the silicon wafer in the whole process of moving the silicon wafer in the cavity, so that the oxidation-reduction reaction of the surface of the silicon wafer is ensured to be full, and the problem of oxide film defect on the surface of the silicon wafer is avoided.
Further, in the device for purifying impurities in a silicon wafer provided by the application, the spray head is connected to the tail end of the auxiliary pipe body, the air hole row communicated with the auxiliary pipe body is arranged at the center of the spray head, and the air hole row is formed by arranging a plurality of air holes in a straight line. When the gas in the auxiliary pipe body passes through the gas jet hole row, the gas is jetted out from each gas jet hole, so that the gas is more uniformly scattered on the silicon wafer when being jetted out, and the uneven thickness of an oxide film on the silicon wafer is avoided.
Further, in the device for purifying impurities in the silicon wafer provided by the application, the temperature control mechanism comprises a plurality of heating strips which are placed in parallel, each heating strip is wrapped on the periphery of the auxiliary tube or arranged on the inner wall of the chamber, and the heating strip is used for heating the gas flowing through the auxiliary tube and the silicon wafer contacted with the gas. The temperature control mechanism can regulate and control the temperature of the gas and the silicon wafer. When the silicon wafer is on the conveying mechanism, the temperature control mechanism is started to generate damp and hot gas, and when the damp and hot gas contacts the silicon wafer, on one hand, the temperature of the silicon wafer can be increased, the phosphorus slurry layer on the back of the silicon wafer is promoted to absorb metal impurities in the silicon wafer, on the other hand, an oxide film can be formed on the front of the silicon wafer, and the oxide film can also absorb the metal impurities in the silicon wafer at high temperature, so that the aim of purifying the silicon wafer is fulfilled.
Further, in the device for purifying impurities in the silicon wafer provided by the application, the conveying mechanism comprises a plurality of parallel rollers, and the rollers are driven by the driving device to rotate in the same direction. The carrier that uses a plurality of gyro wheels as transport mechanism, on the one hand broken silicon chip can be followed the gyro wheel clearance and fallen and then collected, on the other hand moist gaseous condensed water droplet also can be followed the gyro wheel clearance and fallen and then collected, can not cause above-mentioned waste material to gather in the cavity, influences production.
Further, in the device for purifying impurities in the silicon wafer provided by the application, the device further comprises an exhaust pipeline, wherein an air inlet of the exhaust pipeline stretches into the cavity and is communicated with the spray head. When in operation, as the air pressure in the chamber increases, part of air can enter the branch pipeline from the exhaust hole, and then gathered on the main pipeline, and discharged outside the chamber from the main pipeline.
Further, in the device for purifying impurities in a silicon wafer provided by the application, the bottom of the chamber is slidably connected with a collecting box, and the collecting box is located below the conveying mechanism and is used for collecting waste liquid and silicon wafer scraps. During the silicon wafer transfer process, broken silicon wafers can directly fall into the collection box from the gaps between the rollers. Meanwhile, the vapor in the waste gas can fall into the collecting box through the gap between the rollers. The staff regularly pulls out the collection box from the bottom of the cavity to finish the collection work of broken silicon chips and waste liquid.
On the other hand, the application also provides a method for purifying impurities in the silicon wafer, which comprises the steps of using a conveying mechanism to drive the silicon wafer to move in the cavity, and spraying wet gas to the silicon wafer positioned on the conveying mechanism through a gas spraying pipe positioned above the conveying mechanism and a spray head connected to the tail end of the gas spraying; the temperature control mechanism heats the humid gas in the air injection pipe and the silicon wafer, so that the humid gas contacts with the silicon wafer and then generates an oxide film through oxidation-reduction reaction.
Further, in the method for purifying impurities in a silicon wafer provided by the application, the method comprises the following steps:
s1: placing a silicon wafer with one surface coated with a phosphorus slurry layer on a conveying mechanism, wherein the conveying mechanism drives the silicon wafer to pass through a cavity, and the surface coated with the phosphorus slurry layer faces the conveying mechanism;
s2: opening a gas storage tank to supply gas into the chamber, wherein the gas flows through the moisture mechanism and is humidified by the moisture mechanism to form humidified gas;
s3: the moist gas enters the gas spraying pipe and is heated by a temperature control mechanism wrapped on the periphery of the gas spraying pipe to form moist and hot gas;
s4: the silicon wafer reaches a preset temperature under the heating of the temperature control mechanism;
s5: the wet and hot gas contacts the silicon wafer and then undergoes oxidation-reduction reaction to form a layer of oxide film on the surface of the silicon wafer;
s6: controlling the temperature control mechanism to maintain the temperature in the cavity, and closing the temperature control mechanism after forming the oxide film on the surface of the silicon wafer to a preset thickness;
s7: and conveying the silicon wafer out of the chamber.
In the method, the silicon wafer is driven by the conveying mechanism to move. The silicon wafer is heated and cooled and annealed through the temperature control mechanism, so that an oxide film on the front surface of the silicon wafer and a phosphor slurry layer on the back surface of the silicon wafer can be dissolved and absorb metal impurities in the silicon wafer in a high-temperature environment and a cooling process, and the effect of purifying the silicon wafer is achieved. In addition, the silicon wafer completely completes the impurity removal work in the cavity, so that the problems of collision and breakage of the silicon wafer card in the process of transferring the silicon wafer are avoided, and the yield of the silicon wafer is improved. The wet and hot gas can heat the silicon wafer, and simultaneously can generate oxidation-reduction reaction on the front surface of the silicon wafer to form a layer of oxide film, and the oxide film can assist in absorbing impurities in the silicon wafer, so that the purity of the silicon wafer is improved. And secondly, the oxide film can effectively reduce the corrosion rate of the silicon wafer in the later texturing process, so that a polishing structure layer is formed on one surface of the silicon wafer, the polishing structure layer has a planar structure and can reflect light, the light is reserved in the silicon wafer, and the light utilization rate of the silicon wafer is improved.
The beneficial effects are that: before the silicon wafer is sent into the chamber, the back surface of the silicon wafer is coated with a phosphorus slurry layer, and the front surface of the silicon wafer is not treated. When the silicon wafer is sent into the chamber, the front face faces the air ejector tube. The silicon chip is driven by the conveying mechanism to move. The air jet pipe jets damp and hot air to the front of the silicon slice. The hot and humid gas can heat the silicon wafer and can generate oxidation-reduction reaction on the front surface of the silicon wafer to form a layer of oxide film. Because the metal impurities in the silicon wafer have different solubilities in different substances, an oxide film with high solubility for the metal impurities is introduced into the silicon wafer, and the metal impurities in the silicon wafer are adsorbed in the oxide film, so that the aim of deeply purifying the impurities in the silicon wafer can be fulfilled. And secondly, the oxide film can effectively reduce the corrosion rate of the silicon wafer in the later texturing process and improve the product yield. Because only one side of the silicon wafer is coated with the phosphorus slurry layer and the other side is replaced by the oxide film, the cost can be effectively reduced, and only one side of the phosphorus silicon gettering layer is removed later, so that the production efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a device for purifying impurities in a silicon wafer;
FIG. 2 is a schematic diagram of a moisture mechanism;
FIG. 3 is a schematic diagram of a spray head structure;
FIG. 4 is a schematic diagram of the structure of a silicon wafer after processing;
FIG. 5 is a schematic flow chart of a method for purifying impurities in a silicon wafer;
in the figure:
1. a conveying mechanism; 11. a roller;
2. a chamber;
3. a silicon wafer; 31. an oxide thin film; 32. a phosphorus slurry layer;
4. a gas lance; 41. a main pipe body; 42. an auxiliary pipe body;
5. a spray head; 51. a gas injection hole row; 511. a gas injection hole; 52. an exhaust hole;
6. a temperature control mechanism; 61. a heating strip;
7. a moisture mechanism; 71. a liquid bottle; 72. an air inlet pipe; 73. an air outlet pipe; 74. water;
8. an exhaust duct; 81. a main pipe; 82. dividing the pipeline;
9. and a collection box.
Detailed Description
The following detailed description of exemplary embodiments of the invention refers to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration exemplary embodiments in which the invention may be practiced. While these exemplary embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, it is to be understood that other embodiments may be realized and that various changes to the invention may be made without departing from the spirit and scope of the invention. The following more detailed description of the embodiments of the invention is not intended to limit the scope of the invention, as claimed, but is merely illustrative and not limiting of the invention's features and characteristics in order to set forth the best mode of carrying out the invention and to sufficiently enable those skilled in the art to practice the invention. Accordingly, the scope of the invention is limited only by the attached claims.
The inventor discovers that the phosphorus gettering is carried out by using the technology of spraying and overlapping the chained diffusion annealing furnace by the phosphorus slurry layer 32 at present, the spraying of the phosphorus slurry layer 32 and the chained diffusion annealing furnace are integrated together, and the rapid annealing technology is used, so that the metal impurities are fixed and separated out, and the phosphorus slurry layer 32 is coated on the two sides of the silicon wafer 3 in the phosphorus silicon gettering layer, so that the production cost is high, and the phosphorus silicon gettering layer needs to be removed on the two sides of the silicon wafer 3, so that the problem of low production efficiency is caused.
Example 1
In order to solve the above problems, the following description is given with reference to the accompanying drawings:
as shown in fig. 1, an embodiment of the present application provides a device for purifying impurities inside a silicon wafer 3, which includes a conveying mechanism 1, an air jet pipe 4 and a temperature control mechanism 6. The conveying mechanism 1 is arranged in the chamber 2 and is used for driving the silicon wafer 3 to move in the chamber 2. The gas spraying pipe 4 is positioned in the conveying mechanism 1, the tail end of the gas spraying pipe is connected with a spray head 5 which is opposite to the conveying mechanism 1, and the spray head 5 sprays wet gas towards the silicon wafer 3 on the conveying mechanism 1. The temperature control mechanism 6 is wrapped on the gas spraying pipe 4 and is used for heating the humid gas flowing in the gas spraying pipe 4 to form humid and hot gas, and after the humid and hot gas contacts the silicon wafer 3, the oxide film 31 is formed on the surface of the silicon wafer 3 while heating the silicon wafer 3. The gas refers to an inert gas such as nitrogen, helium, etc. The moist gas is the gas carrying water vapor therein. The hot and humid gas is mixed gas with a certain temperature, which is formed by heating inert gas carrying water vapor. The oxide film is mainly composed of silicon dioxide, and is formed by oxidation-reduction reaction of silicon and water vapor under the high-temperature condition.
As shown in fig. 4, the silicon wafer 3 is coated with a phosphor paste layer 32 on its back surface and its front surface is not treated before being fed into the chamber 2. When the silicon wafer 3 is fed into the chamber 2, the front face faces the gas injection tube 4. The silicon chip 3 is driven by the conveying mechanism 1 to move. The gas jet pipe 4 jets damp and hot gas to the front surface of the silicon wafer 3. The hot and humid gas can heat the silicon wafer 3 and simultaneously can generate oxidation-reduction reaction on the front surface of the silicon wafer 3 to form an oxide film 31. Because the metal impurities in the silicon wafer have different solubilities in different substances, an oxide film with high solubility for the metal impurities is introduced into the silicon wafer, and the metal impurities in the silicon wafer are adsorbed in the oxide film, so that the aim of deeply purifying the impurities in the silicon wafer can be fulfilled. Because only one surface of the silicon wafer 3 is coated with the phosphorus slurry layer 32 and the other surface is replaced by the oxide film 31, the cost can be effectively reduced, and only one surface of the phosphorus silicon gettering layer is removed later, so that the production efficiency is improved. And secondly, the oxide film can effectively reduce the corrosion rate of the silicon wafer in the later texturing process, so that a polishing structure layer is formed on one surface of the silicon wafer, the polishing structure layer has a planar structure and can reflect light, the light is reserved in the silicon wafer, and the light utilization rate of the silicon wafer is improved.
As shown in fig. 2, the moisture mechanism 7 includes a liquid bottle 71 containing water 74, an air inlet pipe 72, and an air outlet pipe 73, and the air inlet end of the air injection pipe 4 communicates with the moisture mechanism 7. One end of the air inlet pipe 72 is connected to the air tank, and the other end is inserted into the liquid bottle 71. Preferably into the water 74 within the liquid bottle 71; one end of the air outlet pipe 73 is positioned above the water 74 surface in the liquid bottle 71, and the other end is communicated with the air inlet end of the air spraying pipe 4. In operation, the gas released by the gas storage tank enters the water 74 in the liquid bottle 71 through the gas inlet pipe 72, and after being wetted by the water 74, overflows out of the water 74 surface and enters the gas outlet pipe 73, and then enters the gas spraying pipe 4 from the gas outlet pipe 73. After passing through the liquid bottle 71, the gas can be wetted by the water 74 in the liquid bottle 71, and the water 74 in the liquid bottle 71 can also play a role in filtering to remove impurities in the gas, so that secondary pollution to the silicon wafer 3 caused by the reaction of the gas on the surface of the silicon wafer 3 is avoided. In order to increase the water vapor carried by the gas, the water in the liquid bottle can be heated.
As shown in fig. 1, the gas lance 4 includes a main pipe body 41 and a plurality of sub-pipe bodies 42, the main pipe body 41 extending along the conveying direction of the conveyor 1; a plurality of auxiliary pipes 42 are connected to the main pipe 41 in parallel and vertically at one end, and extend into the chamber 2 to above the conveying mechanism 1 at the other end. The main pipe body 41 is a steel pipe or rubber pipe with a larger diameter and is arranged outside the chamber 2.
Secondary tubular body 42 is smaller in diameter than primary tubular body 41 and communicates with primary tubular body 41. After the humid gas enters the main tube body 41, the humid gas enters each of the sub-tube bodies 42, and then the humid gas is transferred to the silicon wafer 3 transferred on the transfer mechanism 1 through each of the sub-tube bodies 42. Through the plurality of auxiliary pipe bodies 42, the gas is sprayed on the surface of the silicon wafer 3 in the whole moving process of the silicon wafer 3 in the cavity 2, the oxidation-reduction reaction of the surface of the silicon wafer 3 is ensured to be sufficient, and the problem of incomplete oxide film 31 on the surface of the silicon wafer 3 is avoided.
As shown in fig. 3, a gas orifice row 51 communicating with the secondary pipe body 42 is provided at the center of the nozzle 5, and the gas orifice row 51 is formed by arranging a plurality of gas orifices 511 in a straight line. Each secondary pipe 42 is connected at its end to a spray head 5. When the gas in the auxiliary pipe body 42 passes through the gas injection hole row 51, the gas is injected from each gas injection hole 511, so that the gas is more uniformly scattered on the silicon wafer 3 during the gas injection, and the uneven thickness of the oxide film 31 on the silicon wafer 3 is avoided.
As shown in fig. 1, the temperature control mechanism 6 includes a plurality of heating strips 61 disposed in parallel, and each heating strip 61 is wrapped around the outer periphery of the secondary tube 42 and independently heats the gas flowing through the secondary tube 42. Each heating strip 61 is provided with a penetrating heating hole, the number and the positions of the heating holes correspond to those of the auxiliary pipe bodies 42, and each heating hole is sleeved with one auxiliary pipe body 42. The heating strips 61 are internally provided with heating wires which are connected with a controller, and all the heating strips 61 are controlled by the controller to independently heat the auxiliary pipe body 42. The controller controls the heating strips 61 with different numbers to heat, so that the control of the heating temperature of the gas flowing through the auxiliary pipe body 42 can be realized. The gas temperature is required to be high, the energizing quantity of the heating strips 61 is increased, and the energizing quantity of the heating strips 61 is reduced. The temperature control mechanism 6 can regulate and control the temperature of the gas, and then the temperature of the silicon wafer 3 is controlled by the gas. The temperature control mechanism 6 can heat the silicon wafer 3 to a preset temperature to promote the phosphorus slurry layer 32 on the back of the silicon wafer 3 to absorb metal impurities in the silicon wafer 3, and can perform oxidation-reduction reaction on the front of the silicon wafer 3 and hot and humid gas to form an oxide film 31 at the preset temperature, and the oxide film 31 can absorb the metal impurities in the silicon wafer 3 at a high temperature to achieve the purpose of purifying the silicon wafer 3. The temperature control mechanism 6 may also be provided on the inner wall of the chamber 2 to control the temperature of the entire chamber 2.
As shown in fig. 1, the conveying mechanism 1 comprises a plurality of parallel rollers 11, and the rollers 11 are driven to rotate in the same direction by a driving device. The roller 11 is long cylindrical, and the bearings at the two ends of the roller are rotatably connected in the chamber 2. One ends of all the rollers 11 are connected in series through a belt, and when the belt is driven to rotate by the driving device, all the rollers 11 synchronously rotate in the same direction. The driving device is generally a motor and a connecting piece in front of a motor driving shaft, the connecting piece is in rolling connection with a belt, the motor drives the connecting piece to rotate, and the belt connected through the connecting piece drives all the rollers 11 to synchronously rotate. The rollers 11 are used as carriers of the conveying mechanism 1, on one hand, broken silicon wafers 3 can fall from gaps of the rollers 11 to be collected, on the other hand, wet gas condensed water 74 drops can fall from the gaps of the rollers 11 to be collected, and the waste materials are not accumulated in the chamber 2 to influence production.
Example 2
As shown in fig. 1 and 3, in the present embodiment, the device for purifying impurities inside the silicon wafer 3 further includes an exhaust pipe 8. The exhaust duct 8 includes a main duct 81 and a plurality of branch ducts 82, the main duct 81 extending along the conveying direction of the conveyor 1; a plurality of branch pipes 82 are connected to the main pipe 81 in parallel and vertically at one end, and extend into the chamber 2 to above the conveying mechanism 1 at the other end. The main pipe 81 is a steel pipe or hose of a larger diameter and is arranged outside the chamber 2. The branch pipe 82 has a smaller diameter than the main pipe 81 and communicates with the main pipe 81. The spray head 5 is provided with a plurality of exhaust holes 52, the exhaust holes 52 are communicated with the corresponding branch pipelines 82, and the exhaust holes 52 are arranged on the spray head 5 to be beneficial to collecting the redundant waste gas near the conveying mechanism 1. In operation, as the pressure in the chamber 2 increases, part of the gas enters the branch pipe 82 from the exhaust hole 52, and then converges on the main pipe 81, and is discharged from the chamber 2 through the main pipe 81.
The exhaust pipe is arranged to be favorable for collecting waste gas intensively, so that the waste gas is prevented from overflowing from each part of the chamber 2, and the pollution to the production environment is avoided.
Example 3
As shown in fig. 1, the bottom of the chamber 2 is slidably connected with a collecting box 9, and the collecting box 9 is positioned below the conveying mechanism 1 to collect the drip and the broken slag of the silicon wafer 3. The conveying mechanism 1 consists of a plurality of rollers 11 which are arranged in parallel, gaps exist between the adjacent rollers 11, the size of the gaps is one third of the length of the silicon wafer 3, and in the conveying process of the silicon wafer 3, broken silicon wafers 3 can directly fall into the collecting box 9 from the gaps between the rollers 11. At the same time, the water 74 in the exhaust gas condenses and falls into the collecting box 9 through the gap between the rollers 11. The collection box 9 is pulled out from the bottom of the chamber 2 by staff at regular intervals to finish the collection work of broken silicon chips 3 and waste liquid.
Example 4
As shown in fig. 5, the present invention provides a method for purifying impurities inside a silicon wafer 3, comprising using a transfer mechanism 1 to drive the silicon wafer 3 to move in a chamber 2, and spraying wet gas to the silicon wafer 3 on the transfer mechanism 1 through a gas spraying pipe 4 positioned above the transfer mechanism 1 and a spray head 5 connected to the end of the gas spraying pipe 4; the temperature control mechanism 6 heats the humid gas in the gas injection tube 4 and the silicon wafer 3, and after the humid gas contacts the silicon wafer 3, oxidation-reduction reaction occurs to generate a layer of oxide film 31.
The specific steps are as follows:
s1: placing a silicon wafer 3 with one surface coated with a phosphorus slurry layer 32 on a conveying mechanism 1, driving the silicon wafer 3 to pass through a cavity 2 by the conveying mechanism 1, and enabling the surface coated with the phosphorus slurry layer 32 to face the conveying mechanism 1;
s2: opening a gas storage tank to supply gas into the chamber 2, wherein the gas flows through the moisture mechanism 7 and is humidified by the moisture mechanism 7 to form humidified gas; the liquid bottle 71 of the wet gas mechanism 7 is filled with water 74, and when the gas passes through the water 74, not only the wet gas but also impurities in the gas can be filtered.
S3: the moist gas enters the gas spraying pipe 4 and is heated by a temperature control mechanism 6 wrapped on the periphery of the gas spraying pipe 4 to form moist and hot gas;
s4: the silicon wafer 3 reaches a preset temperature under the heating of the temperature control mechanism 6;
s5: the wet and hot gas contacts the silicon wafer 3 and then undergoes oxidation-reduction reaction to form an oxide film 31 on the surface of the silicon wafer;
s6: controlling the temperature control mechanism 6 to maintain the temperature in the chamber 2, forming the oxide film on the surface of the silicon wafer 3 to a preset thickness, and closing the temperature control mechanism 6;
s7: the silicon wafer 3 is transported out of the chamber 2.
In the method, the silicon wafer 3 is driven by the conveying mechanism 1 to move. The silicon wafer 3 is heated and annealed through the temperature control mechanism 6, so that the phosphorus slurry layer 32 on the back surface of the silicon wafer 3 can dissolve and absorb impurities in the silicon wafer 3 in a high-temperature environment and in a cooling process, and the effect of purifying the silicon wafer 3 is achieved. In addition, the silicon wafer 3 completely completes the impurity removal work in the chamber 2, so that the problems of collision and breakage of the silicon wafer 3 card and the silicon wafer 3 during the process of transferring the silicon wafer 3 are avoided, and the yield of the silicon wafer 3 is improved. The hot and humid gas can heat the silicon wafer 3, and simultaneously can generate oxidation-reduction reaction on the front surface of the silicon wafer 3 to form a layer of oxide film 31, and the oxide film 31 can assist in absorbing impurities in the silicon wafer 3, so that the purity of the silicon wafer 3 is improved. And secondly, the oxide film formed on the surface of the silicon wafer 3 can effectively reduce the corrosion rate of the silicon wafer 3 in the later texturing process and improve the light utilization rate of the product.
The invention and its embodiments have been described above by way of illustration and not limitation, and the invention is illustrated in the accompanying drawings and described in the drawings in which the actual structure is not limited thereto. Therefore, if one of ordinary skill in the art is informed by this disclosure, the structural mode and the embodiments similar to the technical scheme are not creatively designed without departing from the gist of the present invention.
Claims (10)
1. The device for purifying impurities in the silicon wafer is characterized by comprising
The conveying mechanism (1) is arranged in the cavity (2) and is used for driving the silicon wafer (3) to move in the cavity (2);
the air ejector tube (4) is positioned in the conveying mechanism (1), the tail end of the air ejector tube is connected with a spray head (5) which is opposite to the conveying mechanism (1), and the spray head (5) sprays moist gas towards the silicon wafer (3) on the conveying mechanism (1);
the temperature control mechanism (6) is wrapped around the air injection pipe (4) or is positioned on the inner wall of the cavity (2) and is used for heating the gas flowing in the air injection pipe (4) to form damp and hot gas and heating the silicon wafer (3);
and after the wet and hot gas contacts the silicon wafer (3), performing oxidation-reduction reaction with the silicon wafer (3) to form an oxide film (31).
2. The device for purifying impurities inside a silicon wafer according to claim 1, wherein the air inlet end of the air injection pipe (4) is communicated with a moisture mechanism (7), the moisture mechanism (7) comprises a liquid bottle (71) filled with water (74), an air inlet pipe (72) and an air outlet pipe (73), one end of the air inlet pipe (72) is connected to an air storage tank, and the other end of the air inlet pipe is inserted into the liquid bottle (71); the air outlet pipe (73) is positioned on the surface of water (74) in the liquid bottle (71), and the other end of the air outlet pipe is communicated with the air inlet end of the air jet pipe (4).
3. The device for purifying impurities inside a silicon wafer according to claim 1, wherein the gas injection tube (4) comprises a main tube body (41) and a plurality of auxiliary tube bodies (42), the main tube body (41) extending along the conveying direction of the conveying mechanism (1); one end of each auxiliary pipe body (42) is connected to the main pipe body (41) in parallel and vertically, and the other end of each auxiliary pipe body extends into the cavity (2) to the position above the conveying mechanism (1).
4. A silicon wafer internal impurity purifying device according to claim 3, wherein the nozzle (5) is connected to the end of the secondary pipe body (42), and a gas orifice row (51) communicating with the secondary pipe body (42) is provided at the center thereof, and the gas orifice row (51) is formed by arranging a plurality of gas orifices (511) in a straight line.
5. A device for purifying impurities inside a silicon wafer according to claim 3, wherein the temperature control mechanism (6) comprises a plurality of heating strips (61) placed in parallel, each heating strip (61) is wrapped around the outer periphery of the secondary tube body (42) or is arranged on the inner wall of the chamber (2), and the gas flowing through the secondary tube body (42) and the silicon wafer (3) contacted with the gas are heated.
6. The device for purifying impurities inside a silicon wafer according to claim 1, wherein the conveying mechanism (1) comprises a plurality of parallel rollers (11), and the rollers (11) are driven by a driving device to rotate in the same direction.
7. The device for purifying the interior impurities of a silicon wafer according to any one of claims 1 to 6, further comprising an exhaust pipe (8), wherein an air inlet of the exhaust pipe (8) extends into the chamber (2) and communicates with the shower head (5).
8. The device for purifying the internal impurities of the silicon wafer according to any one of claims 1 to 6, wherein the bottom of the chamber (2) is slidably connected with a collection box (9), and the collection box (9) is positioned below the conveying mechanism (1) and is used for collecting waste liquid and crushed residues of the silicon wafer (3).
9. A method for purifying impurities in a silicon wafer (3), which is characterized by comprising the steps of using a conveying mechanism (1) to drive the silicon wafer (3) to move in a cavity (2), and spraying moist gas to the silicon wafer (3) positioned on the conveying mechanism (1) through a gas spraying pipe (4) positioned above the conveying mechanism (1) and a spray head (5) connected to the tail end of the gas spraying pipe (4);
the temperature control mechanism (6) heats the humid gas in the air jet pipe (4) and the silicon wafer (3), so that the humid gas contacts with the silicon wafer (3) and then generates an oxide film (31) through oxidation-reduction reaction.
10. The method for purifying impurities inside a silicon wafer (3) according to claim 8, comprising
S1: placing a silicon wafer (3) with one surface coated with a phosphorus slurry layer (32) on a conveying mechanism (1), wherein the conveying mechanism (1) drives the silicon wafer (3) to pass through a cavity (2), and the surface coated with the phosphorus slurry layer (32) faces the conveying mechanism (1);
s2: opening a gas storage tank to supply gas into the chamber (2), wherein the gas flows through the moisture mechanism (7) and is humidified by the moisture mechanism (7) to form humidified gas;
s3: the moist gas enters the gas spraying pipe (4) and is heated by a temperature control mechanism (6) wrapped on the periphery of the gas spraying pipe (4) to form moist and hot gas;
s4: the silicon wafer (3) reaches a preset temperature under the heating of the temperature control mechanism (6); the method comprises the steps of carrying out a first treatment on the surface of the
S5: the wet and hot gas contacts the silicon wafer (3) and then undergoes oxidation-reduction reaction to form a layer of oxide film (31) on the surface of the silicon wafer;
s6: controlling the temperature control mechanism (6) to maintain the temperature in the chamber (2), forming the oxide film on the surface of the silicon wafer (3) to a preset thickness, and closing the temperature control mechanism (6);
s7: and conveying the silicon wafer (3) out of the chamber (2).
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| JP2008010890A (en) * | 2007-09-20 | 2008-01-17 | Kyocera Corp | Method of diffusing impurity to crystal silicon particles, photoelectric conversion device, and photovoltaic generator |
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| CN114464699A (en) * | 2021-12-31 | 2022-05-10 | 隆基绿能科技股份有限公司 | Silicon wafer processing method and device |
| CN116053113A (en) * | 2023-01-17 | 2023-05-02 | 江苏启威星装备科技有限公司 | Silicon wafer gettering method for preparing solar cell and method for preparing solar cell |
| CN116741879A (en) * | 2023-06-27 | 2023-09-12 | 通威太阳能（安徽）有限公司 | N-type silicon wafer gettering method, N-type gettering silicon wafer, solar cell and preparation method of N-type silicon wafer gettering method |
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| JP2008010890A (en) * | 2007-09-20 | 2008-01-17 | Kyocera Corp | Method of diffusing impurity to crystal silicon particles, photoelectric conversion device, and photovoltaic generator |
| US20170229600A1 (en) * | 2013-11-19 | 2017-08-10 | Institutt For Energiteknikk | Passivation stack on a crystalline silicon solar cell |
| CN114464699A (en) * | 2021-12-31 | 2022-05-10 | 隆基绿能科技股份有限公司 | Silicon wafer processing method and device |
| CN116053113A (en) * | 2023-01-17 | 2023-05-02 | 江苏启威星装备科技有限公司 | Silicon wafer gettering method for preparing solar cell and method for preparing solar cell |
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