CN117802569A - Sapphire continuous feeding device - Google Patents
Sapphire continuous feeding device Download PDFInfo
- Publication number
- CN117802569A CN117802569A CN202410135478.9A CN202410135478A CN117802569A CN 117802569 A CN117802569 A CN 117802569A CN 202410135478 A CN202410135478 A CN 202410135478A CN 117802569 A CN117802569 A CN 117802569A
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- Prior art keywords
- sapphire
- crucible
- feeding
- feeding device
- continuous
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 70
- 239000010980 sapphire Substances 0.000 title claims abstract description 70
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000003860 storage Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000006698 induction Effects 0.000 claims abstract description 12
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 18
- 239000000155 melt Substances 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a sapphire continuous feeding device which structurally comprises a crucible, a die and an induction heater, wherein the induction heater is arranged around the outer side of the crucible, the die is arranged in the crucible, a slit formed by a capillary tube is arranged in the die, the continuous feeding device also comprises a continuous feeding device body, a discharging port of the continuous feeding device body is communicated with a feeding end of the crucible, the continuous feeding device body comprises a feeding bin and a feeding pipe, the feeding bin comprises a storage tank and a vibration feeder, the feeding end of the vibration feeder is connected with the discharging end of the bottom of the storage tank, the discharging end of the vibration feeder is connected with the feeding end of the feeding pipe, and the discharging end of the feeding pipe is communicated with the feeding end of the crucible. The invention has the advantages that: the structure design is reasonable, and the continuous feeding mode is used, so that the sapphire crystal grown by the guided mode method can effectively reduce the duty ratio of the material melting and annealing cooling steps in the crystal growth process, and meanwhile, the yield is obviously improved. On the other hand, the continuous feeding mode can control the melt components to be consistent in the crystal growth process, improve the crystal quality and reduce the generation of dislocation and small grain boundaries in the crystal.
Description
Technical Field
The invention relates to a continuous sapphire feeding device, in particular to a continuous feeding device for growing sapphire crystals by a guided mode method, and belongs to the technical field of sapphire single crystal preparation.
Background
The sapphire single crystal has excellent mechanical, optical and thermal properties, and is widely applied to the aspects of semiconductor substrates, aerospace, high-strength laser window materials and the like. In the civil field, sapphire also has an increasingly large market in the fields of smart phone screens, electronic watch dials and the like. This also requires that the sapphire crystal be grown to a larger size and of higher quality.
The method for preparing sapphire monocrystal includes such steps as putting molten body in mould with capillary slot, lifting the molten body to top of mould by capillary action to form a layer of film, diffusing it to periphery, and crystallizing by crystal seed. The prior art generally adopts the shaping to grow the sapphire single crystal.
Because sapphire has a high melting point of 2050 ℃, long material melting and annealing cooling time are required for growing sapphire crystals by using a guided mode method, the prior art generally adopts a single feeding mode, namely, after a required amount of raw materials are added, material melting is carried out firstly, then a normal preparation flow is carried out, annealing cooling is required after the preparation is completed, then material feeding is carried out, the flow is repeated, the yield cannot meet the increasing production requirement, on the other hand, the consistency of melt components in the crystal growing process is influenced by repeated material feeding, the quality stability of crystals is influenced, and dislocation and small grain boundaries in crystals possibly exist.
Disclosure of Invention
The invention provides a sapphire continuous feeding device, which aims to overcome the defects in the prior art, realize the improvement of yield and ensure the stability of product quality.
The technical solution of the invention is as follows: the continuous sapphire feeding device improves the production efficiency of the sapphire crystal by a guided mode method in a continuous feeding mode, and improves the quality of the crystal.
Specifically, its structure includes crucible, mould and induction heater, and induction heater encircles the crucible outside setting, and the mould setting is equipped with the slit that the capillary formed in the crucible in the mould, still includes the continuous feeding device body of discharge gate intercommunication crucible feed end, and continuous feeding device body includes feeding bin and filling tube, and feeding bin includes the vibration feeder of storage tank bottom discharge end is connected to storage tank and feed end, and the filling tube feed end is connected to vibration feeder discharge end, filling tube discharge end intercommunication crucible feed end.
Preferably, the storage tank is a crushed aggregates storage tank, crushed sapphire crushed aggregates are stored in the crushed aggregates storage tank, the purity of the crushed sapphire crushed aggregates is greater than 99.999%, and the average granularity is 0.5mm. Can ensure that the sapphire feeding pipe is not blocked in the feeding process.
Preferably, the feeding tube is a sapphire feeding tube, and the sapphire feeding tube is integrally far away from a thermal field high-temperature region where the crucible and the induction heater are located. Can avoid pollution in the transportation process of crushed aggregates and ensure that a feeding pipe can not be blocked due to softening of high temperature in the feeding process.
Preferably, the height of the capillary tube is 1.5-2 times of the depth of the crucible. Compared with the traditional guided mode method, the sapphire capillary tube has higher height, and the influence of disturbance on the melt in the process of melting the sapphire crushed aggregates on a long-grain boundary surface can be avoided.
The method for growing the sapphire crystal by the guided mode method comprises the steps of vacuumizing, introducing argon, melting, seeding, necking down, expanding shoulder, starting a sapphire continuous feeding device when the sapphire continuous feeding device enters a constant diameter growth stage, enabling sapphire crushed aggregates stored in a storage tank feeding bin to enter a vibration feeder under the action of gravity, and continuously and uniformly transporting the sapphire crushed aggregates into a crucible through a sapphire feeding pipe in a vibration mode.
Preferably, when the sapphire crushed aggregates are transported into the crucible through the sapphire feeding pipe, the weight of the sapphire materials added into the crucible is kept consistent with the weight of crystal growth. Can realize the consistency of the components in the melt.
The invention has the advantages that: the structure design is reasonable, and the continuous feeding mode is used, so that the sapphire crystal grown by the guided mode method can effectively reduce the duty ratio of the material melting and annealing cooling steps in the crystal growth process, and meanwhile, the yield is obviously improved. On the other hand, the continuous feeding mode can control the melt components to be consistent in the crystal growth process, improve the crystal quality and reduce the generation of dislocation and small grain boundaries in the crystal.
Drawings
FIG. 1 is a schematic structural view of a sapphire continuous feeding apparatus of the present invention.
In the figure, 1 is a feeding bin, 2 is a crushed aggregates storage tank, 3 is a vibration feeder, 4 is a sapphire feeding pipe, 5 is an induction heater, 6 is a crucible, 7 is a capillary tube, and 8 is a die.
Detailed Description
The present invention will be described in further detail with reference to examples and embodiments.
As shown in fig. 1, the sapphire continuous feeding device structurally comprises a crucible 6, a die 8, an induction heater 5 and a continuous feeding device body, wherein a discharge hole of the continuous feeding device body is communicated with a feeding end of the crucible 6, the induction heater 5 is arranged around the outer side of the crucible 6, the die 8 is arranged in the crucible 6, and a slit formed by a capillary tube 7 is formed in the die 8.
The continuous feeding device body comprises a feeding bin 1 and a sapphire feeding pipe 4, wherein the feeding bin 1 comprises a crushed aggregates storage tank 2 and a vibration feeder 3, the feeding end of the vibration feeder 3 is connected with the feeding end of the sapphire feeding pipe 4, and the discharging end of the sapphire feeding pipe 4 is communicated with the feeding end of a crucible 6.
The crushed sapphire crushed aggregates are stored in the crushed aggregate storage tank 2, the purity is greater than 99.999%, the average granularity is about 0.5mm, and the sapphire feeding pipe 4 can not be blocked in the feeding process.
The feed rate can be controlled by varying the amplitude of the vibratory feeder 3.
The sapphire feeding pipe 4 is made of sapphire, is integrally far away from a high-temperature region of a thermal field where the crucible 6 and the induction heater 5 are located, can avoid pollution in the crushed aggregates transportation process, and ensures that a pipe orifice is blocked due to softening caused by high temperature in the feeding process.
The height of the capillary tube 7 is 1.5-2 times of the depth of the crucible 6, the specific height is determined by a thermal field and process conditions, compared with the conventional guided mode method, the height of the sapphire capillary tube is higher, and the influence of disturbance on a melt in the process of melting the sapphire crushed aggregates on a long-grain boundary surface can be avoided.
According to the structure, when the device is used for growing the sapphire crystal by using the guided mode method, the processes of vacuumizing, introducing argon, melting, seeding, necking down and shouldering are consistent with the traditional guided mode method in the prior art. When entering the equal diameter growth stage, the feeding device is started, the sapphire crushed aggregates stored in the feeding bin 1 of the storage tank 2 enter the vibration feeder 3 under the action of gravity, the sapphire crushed aggregates are continuously and uniformly transported into the crucible 6 through the sapphire feeding pipe 4 in a vibration mode, and the weight of the sapphire materials added into the crucible 6 is controlled to be consistent with the weight of crystal growth in the process, so that the purpose that components in a melt are kept consistent is realized.
Through the production flow, the sapphire material is continuously supplemented into the crucible 6, and the quality of the melt is kept unchanged after the growth of the sapphire crystal is finished once, so that the sapphire crystal can be continuously grown under the influence of factors such as pollution elimination, and the duty ratio of links such as material melting, cooling annealing and the like in the whole crystal growth process can be greatly reduced.
On the other hand, the dislocation density, the small grain boundary content and the like of the sapphire crystal grown by the device can be obviously reduced because the components of the melt are kept unchanged in the crystal growth process. The crystal quality is obviously improved.
The above components are all of the prior art, and any model and existing design that can achieve their corresponding functions can be used by those skilled in the art.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and improvements could be made by those skilled in the art without departing from the inventive concept, which falls within the scope of the present invention.
Claims (6)
1. The utility model provides a sapphire continuous feeding device, its structure includes crucible (6), mould (8) and induction heater (5), induction heater (5) encircle crucible (6) outside setting, mould (8) set up in crucible (6), be equipped with the slit that capillary (7) formed in mould (8), a serial communication port, still include the continuous feeding device body of discharge gate intercommunication crucible (6) feed end, continuous feeding device body includes feeding bin (1) and filling tube, feeding bin (1) include that storage tank and feed end connect vibration feeder (3) of storage tank bottom discharge end, vibration feeder (3) discharge end connect the filling tube feed end, the filling tube discharge end communicates crucible (6) feed end.
2. The sapphire continuous feeding device according to claim 1, wherein the storage tank is a crushed material storage tank (2), crushed sapphire crushed materials are stored in the crushed material storage tank (2), the purity of the crushed sapphire crushed materials is greater than 99.999%, and the average granularity is 0.5mm.
3. A sapphire continuous feeding device according to claim 1, wherein the feeding tube is a sapphire feeding tube (4), and the sapphire feeding tube (4) is integrally far away from the high temperature region of the thermal field where the crucible (6) and the induction heater (5) are located.
4. A sapphire continuous feeding apparatus according to claim 1 wherein the capillary (7) has a height of 1.5-2 times the depth of the crucible (6).
5. The method for growing the sapphire crystal by the guided mode method comprises vacuumizing, introducing argon, melting, seeding, necking down and expanding shoulders, and is characterized in that when the method enters the equal-diameter growth stage, the continuous sapphire feeding device according to any one of claims 1-4 is started, the sapphire stored in a feeding bin (1) of a storage tank (2) enters a vibration feeder (3) under the action of gravity, and the sapphire is continuously and uniformly transported into a crucible (6) through a feeding pipe in a vibration mode.
6. A method for growing a sapphire crystal according to claim 5, wherein the weight of the sapphire fed into the crucible (6) is maintained to be the same as the weight of the crystal to be grown when the sapphire is transported into the crucible (6) via the feeding tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410135478.9A CN117802569A (en) | 2024-01-31 | 2024-01-31 | Sapphire continuous feeding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410135478.9A CN117802569A (en) | 2024-01-31 | 2024-01-31 | Sapphire continuous feeding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117802569A true CN117802569A (en) | 2024-04-02 |
Family
ID=90428414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410135478.9A Pending CN117802569A (en) | 2024-01-31 | 2024-01-31 | Sapphire continuous feeding device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117802569A (en) |
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2024
- 2024-01-31 CN CN202410135478.9A patent/CN117802569A/en active Pending
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