CN117795796A - 垂直谐振器型发光元件 - Google Patents

垂直谐振器型发光元件 Download PDF

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Publication number
CN117795796A
CN117795796A CN202280054354.7A CN202280054354A CN117795796A CN 117795796 A CN117795796 A CN 117795796A CN 202280054354 A CN202280054354 A CN 202280054354A CN 117795796 A CN117795796 A CN 117795796A
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CN
China
Prior art keywords
multilayer film
layer
film mirror
plane
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280054354.7A
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English (en)
Chinese (zh)
Inventor
仓本大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Publication of CN117795796A publication Critical patent/CN117795796A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202280054354.7A 2021-08-03 2022-07-25 垂直谐振器型发光元件 Pending CN117795796A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-127606 2021-08-03
JP2021127606A JP7754653B2 (ja) 2021-08-03 2021-08-03 垂直共振器型発光素子
PCT/JP2022/028640 WO2023013457A1 (ja) 2021-08-03 2022-07-25 垂直共振器型発光素子

Publications (1)

Publication Number Publication Date
CN117795796A true CN117795796A (zh) 2024-03-29

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CN202280054354.7A Pending CN117795796A (zh) 2021-08-03 2022-07-25 垂直谐振器型发光元件

Country Status (5)

Country Link
US (1) US20250167522A1 (https=)
EP (1) EP4383485A4 (https=)
JP (1) JP7754653B2 (https=)
CN (1) CN117795796A (https=)
WO (1) WO2023013457A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7581248B2 (ja) * 2020-01-08 2024-11-12 スタンレー電気株式会社 垂直共振器型発光素子
TW202504193A (zh) * 2023-03-03 2025-01-16 日商索尼集團公司 面發光雷射
JP2024131244A (ja) * 2023-03-15 2024-09-30 スタンレー電気株式会社 垂直共振器型発光素子
DE102023125625A1 (de) * 2023-09-21 2025-03-27 Ams-Osram International Gmbh Oberflächenemitter und Verfahren zum Herstellen eines Oberflächenemitters
WO2026002511A1 (en) * 2024-06-28 2026-01-02 Ams-Osram International Gmbh GaN-based VCSELS WITH MODE-MATCHING PARABOLIC META-MIRRORS
WO2026022891A1 (ja) * 2024-07-22 2026-01-29 Ｎｔｔ株式会社 半導体レーザ

Citations (5)

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Publication number Priority date Publication date Assignee Title
CN101510665A (zh) * 2008-02-13 2009-08-19 富士施乐株式会社 激光器、模块、光传输装置和系统、光通信装置和系统
CN104579337A (zh) * 2013-10-16 2015-04-29 精工爱普生株式会社 发光装置以及原子振荡器
JP2019208004A (ja) * 2018-05-24 2019-12-05 スタンレー電気株式会社 垂直共振器型発光素子
CN112913093A (zh) * 2018-10-18 2021-06-04 斯坦雷电气株式会社 垂直谐振器式发光元件
CN112913094A (zh) * 2018-10-18 2021-06-04 斯坦雷电气株式会社 垂直谐振器式发光元件

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JP2875929B2 (ja) * 1992-10-09 1999-03-31 シャープ株式会社 半導体レーザ素子およびその製造方法
DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE102009001505A1 (de) * 2008-11-21 2010-05-27 Vertilas Gmbh Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben
JP5670040B2 (ja) * 2009-10-09 2015-02-18 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP2011096856A (ja) * 2009-10-29 2011-05-12 Sony Corp 半導体レーザ
US20150311673A1 (en) * 2014-04-29 2015-10-29 Princeton Optronics Inc. Polarization Control in High Peak Power, High Brightness VCSEL
JP6664688B2 (ja) 2015-11-19 2020-03-13 学校法人 名城大学 垂直共振器型発光素子
CN110858702B (zh) * 2018-08-22 2024-12-27 三星电子株式会社 背面发光式光源阵列器件和具有其的电子装置
WO2021124968A1 (ja) * 2019-12-20 2021-06-24 ソニーグループ株式会社 垂直共振器型面発光レーザ素子、垂直共振器型面発光レーザ素子アレイ、垂直共振器型面発光レーザモジュール及び垂直共振器型面発光レーザ素子の製造方法
CN111162451A (zh) * 2019-12-26 2020-05-15 浙江博升光电科技有限公司 底部发射垂直腔面发射激光器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101510665A (zh) * 2008-02-13 2009-08-19 富士施乐株式会社 激光器、模块、光传输装置和系统、光通信装置和系统
CN104579337A (zh) * 2013-10-16 2015-04-29 精工爱普生株式会社 发光装置以及原子振荡器
JP2019208004A (ja) * 2018-05-24 2019-12-05 スタンレー電気株式会社 垂直共振器型発光素子
CN112913093A (zh) * 2018-10-18 2021-06-04 斯坦雷电气株式会社 垂直谐振器式发光元件
CN112913094A (zh) * 2018-10-18 2021-06-04 斯坦雷电气株式会社 垂直谐振器式发光元件

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Publication number Publication date
JP7754653B2 (ja) 2025-10-15
US20250167522A1 (en) 2025-05-22
EP4383485A1 (en) 2024-06-12
WO2023013457A1 (ja) 2023-02-09
JP2023022627A (ja) 2023-02-15
EP4383485A4 (en) 2025-09-03

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