CN117794281A - Packaging structure, manufacturing method of packaging structure and light-emitting device - Google Patents
Packaging structure, manufacturing method of packaging structure and light-emitting device Download PDFInfo
- Publication number
- CN117794281A CN117794281A CN202211145582.3A CN202211145582A CN117794281A CN 117794281 A CN117794281 A CN 117794281A CN 202211145582 A CN202211145582 A CN 202211145582A CN 117794281 A CN117794281 A CN 117794281A
- Authority
- CN
- China
- Prior art keywords
- layer
- package
- inorganic
- packaging
- prefabricated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 272
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000007704 transition Effects 0.000 claims abstract description 206
- 239000000463 material Substances 0.000 claims abstract description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 229920000620 organic polymer Polymers 0.000 claims abstract description 51
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 51
- 239000002243 precursor Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 12
- -1 polydimethylsiloxane Polymers 0.000 claims description 10
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 9
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 230000000379 polymerizing effect Effects 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 abstract description 36
- 230000000903 blocking effect Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 735
- 238000005538 encapsulation Methods 0.000 description 97
- 239000010408 film Substances 0.000 description 61
- 230000004888 barrier function Effects 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 229910004205 SiNX Inorganic materials 0.000 description 19
- 150000002430 hydrocarbons Chemical group 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 210000002381 plasma Anatomy 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- 150000001282 organosilanes Chemical class 0.000 description 7
- 238000001723 curing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 230000003301 hydrolyzing effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 229920006280 packaging film Polymers 0.000 description 4
- 239000012785 packaging film Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- DTBNBXWJWCWCIK-UHFFFAOYSA-N Phosphoenolpyruvic acid Natural products OC(=O)C(=C)OP(O)(O)=O DTBNBXWJWCWCIK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Abstract
The application discloses a packaging structure, a preparation method of the packaging structure and a light emitting device. The packaging structure comprises one packaging unit or a plurality of stacked packaging units; each packaging unit comprises an inorganic packaging layer, a first transition layer and a buffer layer which are sequentially stacked; the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the material of the first transition layer comprises a silicon-containing oxynitride. The packaging structure can reduce thickness and improve the flexibility of the product, and can ensure the water-oxygen blocking capability of the packaging structure.
Description
Technical Field
The application relates to the technical field of display, in particular to a packaging structure, a preparation method of the packaging structure and a light-emitting device.
Background
In the manufacturing process of the display screen, as the production technology of the OLED is mature, the manufacturing cost of the OLED is gradually reduced, and the OLED becomes a technology capable of competing with the liquid crystal display. The advantages of OLEDs are increasingly pronounced, with flexible displays being the greatest feature that can be realized. In the flexible display technology, the original two layers of glass substrates are replaced by a layer of flexible substrate and a layer of film packaging layer, so that the flexible folding performance is realized. Since OLEDs are extremely moisture sensitive and susceptible to failure due to moisture, thin film packages require a strong water-oxygen barrier capability. Moreover, as the bending radius of the flexible display screen is smaller, the requirements on the screen are higher, and the thinner the thin film in the flexible display screen is required to be, the better.
Therefore, a package structure having excellent water-oxygen barrier capability is needed.
Disclosure of Invention
An objective of the embodiments of the present application is to provide a packaging structure, which is used for solving the defects in the prior art.
The embodiment of the application provides a packaging structure, which comprises one packaging unit or a plurality of stacked packaging units; each packaging unit comprises a first inorganic packaging layer, a first transition layer and a buffer layer which are sequentially stacked;
the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the material of the first transition layer comprises silicon-containing oxynitride.
Optionally, in some embodiments of the present application, in the package structure, at least one of the package units further includes a second inorganic package layer, wherein the second inorganic package layer is disposed on a side of the buffer layer away from the first transition layer.
Optionally, in some embodiments of the present application, the material of the second inorganic encapsulation layer is selected from at least one of silicon nitride, silicon oxynitride, silicon dioxide, silicon boronitride.
Optionally, in some embodiments of the present application, the encapsulation unit further comprises a second transition layer disposed between the second inorganic encapsulation layer and the buffer layer. Wherein the material of the second transition layer comprises silicon-containing oxynitride. The material of the second inorganic encapsulation layer comprises silicon nitride.
Optionally, in some embodiments of the present application, the package structure includes a plurality of stacked package units, and the package structure further includes a third transition layer, where the third transition layer is disposed between two adjacent package units. Wherein the material of the third transition layer comprises silicon-containing oxynitride.
Optionally, in some embodiments of the present application, the silicon-containing oxynitride comprises silicon oxynitride (SiON).
Optionally, in some embodiments of the present application, the material of the first transition layer is silicon oxynitride.
Optionally, in some embodiments of the present application, the material of the second transition layer is silicon oxynitride.
Optionally, in some embodiments of the present application, the material of the second transition layer is silicon oxynitride.
Optionally, in some embodiments of the present application, the material of the first inorganic encapsulation layer comprises silicon nitride. Further, the first inorganic packaging layer is a silicon nitride film layer.
Optionally, in some embodiments of the present application, the material of the buffer layer further comprises at least one of an oxide and an oxynitride.
Optionally, in some embodiments of the present application, the oxide is selected from at least one of silica, alumina, zirconia, hafnium oxide. The nitrogen oxides comprise at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride and hafnium oxynitride. The average particle diameter of the oxide is 1-15 nm. The average particle size of the nitrogen oxides is 1-15 nm.
Optionally, in some embodiments of the present application, a thickness of the buffer layer in the encapsulation unit is 0.1-20 um. The thickness of the first transition layer is 2-30 nm. The thickness of the second transition layer is 2-30 nm. The thickness of the third transition layer is 2-30 nm.
Optionally, in some embodiments of the present application, the thickness of the first inorganic encapsulation layer is 50-2000 nm. Further, the thickness of the first inorganic packaging layer is 100-1000 nm.
Correspondingly, the embodiment of the application provides a preparation method of the packaging structure, which comprises the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises one prefabricated packaging unit or a plurality of stacked prefabricated packaging units; each prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer and a prefabricated buffer layer, wherein the material of the prefabricated buffer layer comprises an organic polymer, and the organic polymer has a structural formula of Si-O-R, wherein R represents a hydrocarbon group;
performing heat treatment on the packaging structure precursor, and generating a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer to obtain a packaging unit formed by a stacked structure of the first inorganic packaging layer, the first transition layer and the buffer layer; wherein the first transition layer comprises a silicon-containing oxynitride.
Optionally, in some embodiments of the present application, a preformed second inorganic encapsulation layer is provided on a side of the preformed buffer layer of at least one of the preformed encapsulation units remote from the preformed first inorganic encapsulation layer prior to heat treating the encapsulation structure precursor;
the material of the prefabricated second inorganic packaging layer is at least one selected from silicon nitride, silicon oxynitride, silicon dioxide and boron silicon nitride.
Optionally, in some embodiments of the present application, after the packaging structure precursor is subjected to heat treatment, a second transition layer is generated between the prefabricated second inorganic packaging layer and the prefabricated buffer layer, so as to obtain a packaging unit formed by a stacked structure of the first inorganic packaging layer, the first transition layer, the buffer layer, the second transition layer and the second inorganic packaging layer. Wherein the second transition layer comprises a silicon-containing oxynitride. The material of the second inorganic encapsulation layer comprises silicon nitride.
Optionally, in some embodiments of the present application, the package structure precursor includes a plurality of stacked prefabricated package units, and the package structure precursor is subjected to heat treatment, so that a third transition layer is generated between two adjacent prefabricated package units, and a package structure formed by a stacked structure of the package units, the third transition layer, and the package unit is obtained. Wherein the third transition layer comprises a silicon-containing oxynitride.
Optionally, in some embodiments of the present application, the silicon-containing oxynitride comprises silicon oxynitride (SiON).
Optionally, in some embodiments of the present application, the first transition layer is a silicon oxynitride layer (SiON layer). The second transition layer is a silicon oxynitride layer (SiON layer). The third transition layer is a silicon oxynitride layer (SiON layer).
Optionally, in some embodiments of the present application, the material of the preformed first inorganic encapsulation layer comprises silicon nitride.
The Si-O-R of the organic polymer reacts with the silicon nitride to form the SiON layer.
The material of the prefabricated buffer layer further comprises at least one of oxide and oxynitride; the oxide comprises at least one of silicon dioxide, aluminum oxide, zirconium oxide and hafnium oxide; the nitrogen oxides comprise at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride and hafnium oxynitride. The average particle diameter of the oxide is 1-15 nm. The average particle size of the nitrogen oxides is 1-15 nm.
Alternatively, in some embodiments of the present application, the temperature of the heat treatment is 80 to 150 ℃. The heat treatment time is 0.5-10 h.
Optionally, in some embodiments of the present application, a preformed first inorganic encapsulation layer is formed in the encapsulation structure precursor; forming a prefabricated buffer layer on the prefabricated first inorganic packaging layer; the method further comprises the step of carrying out surface pretreatment on the prefabricated first inorganic packaging layer before forming the prefabricated buffer layer on the prefabricated first inorganic packaging layer.
The surface pretreatment includes ozone treatment or plasma treatment. Wherein the surface pretreatment time is 0.5-10min.
Optionally, in some embodiments of the present application, the surface pretreatment is a hydroxyl-enhanced surface pretreatment.
Alternatively, in some embodiments of the present application, the plasma employed for the plasma treatment comprises O 2 Plasma, N 2 At least one of the O plasmas.
Optionally, in some embodiments of the present application, the buffer layer has a thickness of 0.1 to 20um. The thickness of the first inorganic packaging layer is 50-2000 nm. The organic polymer is obtained by polymerizing polyurethane acrylic ester and polydimethylsiloxane.
Correspondingly, the embodiment of the application also provides a light-emitting device, which comprises a substrate, a light-emitting element and the packaging structure; or comprises a substrate, a light-emitting element and a packaging structure prepared by the method; the light-emitting element is arranged on the substrate, and the packaging structure is arranged on the light-emitting element. Further, the light emitting element is located between the substrate and the package structure.
The beneficial effects of this application lie in:
The packaging structure is characterized in that a buffer layer is arranged between the inorganic packaging layers, and a transition layer is formed between the inorganic packaging layers and the buffer layer. The transition layer formed in the packaging structure has excellent water-oxygen barrier capability, so that the water-oxygen barrier property of the whole packaging structure can be improved, and the performance of a product is improved. The transition layer has excellent barrier property, so that the packaging structure can realize packaging at a lower thickness, and the overall thickness of the packaging structure can be reduced; the reduced thickness further improves the flexibility of the product.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a package structure according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a package structure according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a process of a method for manufacturing a package structure according to an embodiment of the present disclosure;
Fig. 4 is a schematic structural diagram II of a process of a method for manufacturing a package structure according to an embodiment of the present application;
fig. 5 is a schematic structural view of a light emitting device provided in an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or on the order of construction. Various embodiments of the invention may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, a description of a range from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, as applicable regardless of the range. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
In the research process, the inventor of the application finds that in order to achieve the effect of blocking water and oxygen, a water and oxygen blocking layer needs to be arranged on the thin film package, and the material of the layer of thin film is usually an inorganic thin film, wherein the thin film is represented by silicon nitride, aluminum oxide, silicon oxynitride, and the like, is prepared by using PECVD, ALD and other process technologies, and has ideal water and oxygen blocking capability. In addition, in order to achieve better water-oxygen barrier effect and achieve flexible film packaging, the flexibility of the packaging structure is increased, and the film packaging is generally arranged into an inorganic water-oxygen barrier layer/organic buffer layer/inorganic water-oxygen barrier layer packaging structure, wherein the buffer layer material can be processed by using the process technologies of ink-jet printing, slit coating, microcontact printing, plasma polymerization chemical vapor deposition, molecular layer deposition and the like. The material used in the plasma crosslinking chemical vapor deposition can be HMDSO, HMDSN and the like, and films which are close to the properties of organic polymers such as SiOC, siNC, pp-HMDSO and the like can be prepared. They can all effectively play roles of stress buffering, covering film defects and dust, increasing the path of water oxygen permeation and the like, and make an important contribution to the effect of integral film encapsulation.
The embodiment of the application provides a packaging structure, a preparation method of the packaging structure and a light-emitting device. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments.
The embodiment of the application provides a packaging structure. The packaging structure comprises a packaging unit, wherein the packaging unit comprises a laminated first inorganic packaging layer, a first transition layer and a buffer layer. The material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group. The material of the first transition layer comprises a silicon-containing oxynitride. Further, the silicon-containing oxynitride includes silicon oxynitride (SiON), and further, the material of the first transition layer is silicon oxynitride (SiON).
Further, the packaging unit further comprises a second inorganic packaging layer, wherein the second inorganic packaging layer is arranged on one side of the buffer layer far away from the first transition layer. It is conceivable that the second inorganic encapsulation layer is located at the outermost side of the encapsulation structure at this time. Further, the material of the second inorganic encapsulation layer is at least one selected from silicon nitride, silicon oxynitride, silicon dioxide, and silicon boronitride. For example, when the material of the second inorganic encapsulation layer is silicon nitride, a second transition layer may be disposed between the second inorganic encapsulation layer and the buffer layer at this time. The material of the second transition layer comprises a silicon-containing oxynitride. For example, silicon-containing oxynitrides include silicon oxynitride (SiON); for another example, the material of the second transition layer is SiON, i.e., the second transition layer is a SiON layer.
For example, the package structure includes two stacked package units, where each package unit includes a stacked first inorganic package layer, a first transition layer, and a buffer layer, and then the package structure includes a first inorganic package layer, a first transition layer, a buffer layer, a first inorganic package layer, a first transition layer, and a buffer layer that are stacked in sequence.
In some embodiments, the package structure provided herein includes a plurality of stacked package units, "a plurality of package units" refers to two package units and more than two package units; each packaging unit comprises a laminated first inorganic packaging layer, a first transition layer and a buffer layer. At this time, the outermost side of the package structure is a buffer layer.
Further, the packaging structure comprises a plurality of stacked packaging units, and a third transition layer, wherein the third transition layer is arranged between two adjacent packaging units. That is, a third transition layer is provided between the buffer layer of one of the two adjacent package units and the first inorganic package layer of the other package unit. Further, the material of the third transition layer comprises a silicon-containing oxynitride. For example, silicon-containing oxynitrides include silicon oxynitride (SiON); for another example, the third transition layer is a SiON layer.
For example, the package structure includes a stacked first package unit (stacked first inorganic package layer, first transition layer, and buffer layer) and a second package unit (stacked first inorganic package layer, first transition layer, and buffer layer), and a third transition layer is further disposed between the first package unit and the second package unit, that is, a third transition layer may be disposed between the buffer layer of the first package unit and the first inorganic package layer of the second package unit.
Further, the packaging structure comprises a plurality of stacked packaging units, wherein at least one packaging unit further comprises a second inorganic packaging layer, and the second inorganic packaging layer is arranged on one side of the buffer layer far away from the first transition layer. It is conceivable that the second inorganic encapsulation layer is the outermost side of the entire package structure if the encapsulation unit is the outermost side of the package structure. Still further, the material of the second inorganic encapsulation layer is selected from at least one of, but not limited to, silicon nitride, silicon oxynitride, silicon dioxide, silicon boronitride. For example, when the material of the second inorganic encapsulation layer is silicon nitride, a second transition layer may be disposed between the second inorganic encapsulation layer and the buffer layer. Furthermore, it is conceivable that the encapsulation unit may also be located in the middle of the encapsulation structure, in which case the second inorganic encapsulation layer is located on the inside of the entire encapsulation structure.
In an embodiment of the present application, the material of the first inorganic encapsulation layer includes silicon nitride. Further, the first inorganic packaging layer is a silicon nitride film layer. Further, the silicon nitride film layer is doped with hydrogen atoms; namely, the silicon nitride film layer is a film layer containing H atoms (SiNx: H). The silicon nitride film layer not only can play a role in isolating water and oxygen, but also can react with the buffer layer to form a new compact film and a SiON layer. If the second inorganic package layer is also a silicon nitride film layer, a new dense film SiON layer can be formed by reacting with the buffer layer, as in the first inorganic package layer.
In an embodiment of the present application, the material of the buffer layer includes an organic polymer having a si—o—r structure, wherein R represents a hydrocarbon group. Further, the material of the buffer layer includes an organosilane; namely, the organic polymer having a Si-O-R structure is an organic polymer. For example, a raw material of organosilane (organic polymer containing si—o—r structure) is obtained by Polymerizing Urethane Acrylate (PUA) with Polydimethylsiloxane (PDMS). That is, the raw material of the organic polymer having a si—o-R structure may include urethane acrylate (PUA) and Polydimethylsiloxane (PDMS).
In this embodiment, the material of the transition layer is SiON, that is, the material of the first transition layer, the second transition layer, and the third transition layer is SiON, where the terms first, second, and third are used only as labels. It is understood that the transition layer (SiON layer) is disposed between the inorganic encapsulation layer (silicon nitride film layer) and the buffer layer, and that two opposite surfaces of the transition layer are bonded to the adjacent inorganic encapsulation layer (silicon nitride film layer) and buffer layer, respectively. The SiON layer in the packaging structure has excellent barrier property, and is matched with the inorganic packaging layer, so that the water-oxygen barrier property of the packaging structure is greatly enhanced.
In an embodiment of the present application, the material of the buffer layer further includes at least one of an oxide and an oxynitride. That is, the material of the buffer layer includes an organic polymer doped with an oxide and/or oxynitride. Further, the oxide is at least one selected from silica, alumina, zirconia, and hafnium oxide. The nitrogen oxide includes at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride, and hafnium oxynitride. For example, oxides include silicon dioxide, and doping silicon oxide in an organosilane can help to improve buffer layer performance because silicon dioxide has the same silicon and oxygen atoms as Si-O-R structures in an organosilane. Further, the average particle diameter of the oxide or oxynitride is 1 to 15nm. For example, the average particle size of the oxide may be 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, or 15nm. For example, the average particle size of the nitroxide may be 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm or 15nm.
In the embodiment of the application, in the packaging unit, the thickness of each buffer layer is independently 0.1-20 um. For example, each buffer layer may have a thickness of 0.1um, 0.5um, 1um, 2um, 5um, 10um, 15um, 18um, or 20um.
In the embodiment of the application, in the package structure, the thickness of the inorganic package layer may independently be 50 to 2000nm. For example, the thickness of the inorganic encapsulation layer may be 50nm, 60nm, 80nm, 100nm, 150nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1600nm, 1700nm, 1800nm, 1900nm, or 2000nm. The inorganic encapsulation layer may be a first inorganic encapsulation layer or a second inorganic encapsulation layer.
In the embodiment of the application, the formation of the SiON layer between layers can effectively improve the packaging capability of the packaging structure, and the SiNx film layer of the packaging structure can ensure the packaging effect even if being arranged thinner. It can be seen that the SiON layer of the present application is also advantageous for reducing the thickness of the package structure. Still further, the thickness of the transition layer is 2 to 30nm, for example, the thickness of the transition layer may be 2nm, 3nm, 4nm, 5nm, 8nm, 10nm, 15nm, 20nm, 22nm, 25nm, 28nm or 30nm. It is envisioned that the transition layer may be a first transition layer, a second transition layer, or a third transition layer.
In the embodiment of the application, the visible light transmittance of the buffer layer is greater than 85%. For example, the buffer layer may have a visible light transmittance of 85.5%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 95%, 96%, 97%, 98%, or 99%.
In the embodiment of the application, the buffer layer is a film layer with softer film quality and almost zero film stress, and has higher visible light transmittance. In addition, the buffer layer can also cover dust impurities (particle) which possibly fall off in the packaging process, so that the edges and corners of the impurities are more round, a channel through which water and oxygen permeate is not easy to form, and the buffer layer has certain water and oxygen blocking performance.
In an embodiment, referring to fig. 1, in the package structure 100, the inorganic package layers may include a first inorganic package layer 130a, a first buffer layer 150a, and a second inorganic package layer 130b stacked together. Further, the first buffer layer 150a is disposed between the first and second inorganic encapsulation layers 130a and 130b, and there is a first transition layer 140a between the first buffer layer 150a and the first inorganic encapsulation layer 130 a; a second transition layer 140b is formed between the first buffer layer 150a and the second inorganic encapsulation layer 130b. The material of the first buffer layer includes an organic polymer having a Si-O-R structure, wherein R represents a hydrocarbon group. Wherein the material of the first inorganic encapsulation layer 130a includes silicon nitride; the material of the second inorganic encapsulation layer 130b includes silicon nitride.
In an embodiment, referring to fig. 2, the package structure 100 includes a first inorganic package layer 130a, a first buffer layer 150a, a second inorganic package layer 130b, and a second buffer layer 150b stacked together. At this time, the package structure 100 includes two buffer layers, namely, the first buffer layer 150a and the second buffer layer 150b. The second buffer layer 150b is disposed on a side of the second inorganic encapsulation layer 130b facing away from the first buffer layer 150 a. At this time, the material of the second inorganic encapsulation layer 130b is silicon nitride. It is conceivable that the second buffer layer 150b is disposed on a side of the second inorganic encapsulation layer 130b facing away from the first inorganic encapsulation layer 130a or the first buffer layer 150 a. A first transition layer 140a is between the first buffer layer 150a and the first inorganic encapsulation layer 130 a; a second transition layer 140b is formed between the first buffer layer 150a and the second inorganic encapsulation layer 130 b; a third transition layer 140c is formed between the second buffer layer 150b and the second inorganic encapsulation layer 130 b. It can be found that there are three transition layers in the package structure, namely, the first transition layer 140a, the second transition layer 140b, and the third transition layer 140c. Further, the third transition layer 140c is the same as the first transition layer 140a and the second transition layer 140b, and is a SiON layer, and the compactness of the transition layer is excellent and the barrier property is good. It is conceivable that the package structure at this time includes a first inorganic package layer 130a, a first transition layer 140a, a first buffer layer 150a, a second transition layer 140b, a second inorganic package layer 130b, a third transition layer 140c, and a second buffer layer 150b, which are sequentially stacked, and corresponds to the package structure including two stacked package units (inorganic package layers/transition layers/buffer layers), and a transition layer is provided between the stacked package units. The terms first, second, third, etc. in this embodiment are used as labels only.
In an embodiment, on the basis of the package structure shown in fig. 2, the package structure may further include: a third inorganic encapsulation layer (not shown in the figure) is disposed on a side of the second buffer layer facing away from the second inorganic encapsulation layer. It is conceivable that the package structure at this time includes three inorganic package layers, namely, a first inorganic package layer, a second inorganic package layer, and a third inorganic package layer. It is conceivable that the third inorganic encapsulation layer is arranged on the second buffer layer, i.e. the third inorganic encapsulation layer is arranged on the side of the second buffer layer facing away from the second inorganic encapsulation layer. Further, a fourth transition layer is formed between the third inorganic encapsulation layer and the second buffer layer. At this time, the packaging structure has four transition layers, namely a first transition layer, a second transition layer, a third transition layer and a fourth transition layer, which are all SiON layers. And, the material of the third inorganic encapsulation layer includes silicon nitride. The first inorganic packaging layer, the second inorganic packaging layer and the third inorganic packaging layer are all silicon nitride (SiNx) film layers. In this embodiment, the terms first, second, third, etc. are used merely as labels, and do not impose numerical requirements or order of establishment. For example, the first buffer layer, the second buffer layer, etc. are buffer layers; the first inorganic packaging layer, the second inorganic packaging layer and the third inorganic packaging layer are all inorganic packaging layers.
In the embodiment of the application, in the packaging structure, the inorganic packaging layer, the transition layer and the buffer layer are used as bases, and are repeatedly overlapped. The number of inorganic encapsulation layers of the application can be flexibly changed according to different applications and requirements. Similarly, the number of layers of the buffer layer can be flexibly changed according to different application requirements. The inorganic packaging layer has the capability of blocking water and oxygen more ideally; in addition, the light-emitting diode also has higher visible light transmittance.
For example, the package structure of the present application may include a three-layer stack arrangement (e.g., inorganic package layer/buffer layer/inorganic package layer), a four-layer stack arrangement (inorganic package layer/buffer layer/inorganic package layer/buffer layer), or a five-layer stack arrangement (inorganic package layer/buffer layer/inorganic package layer), and so forth, with the number of layers being determined as desired. Further, if the materials of the inorganic encapsulation layers all include silicon nitride (SiNx), and the materials of the buffer layers all include organic polymers, a transition layer is provided between each inorganic encapsulation layer and the adjacent buffer layer; still further, the transition layer may be a SiON layer.
In the embodiments of the present application, the transition layer in the package structure of the present application is not initially deposited thereon, but is formed between the SiNx/organic polymer through post-treatment. Specifically, a hydrolytic condensation reaction occurs between SiNx and si—o-R structure in the organic polymer, thereby forming a dense thin film layer, i.e., siON layer, between SiNx and the organic polymer. The formation of SiON layer between layers can effectively improve the packaging capability of the packaging structure, so that the packaging effect can be ensured even if the SiNx film layer is arranged to be thinner. It can be seen that the present application may be advantageous for reducing the thickness of the package structure.
The embodiment of the application also provides a preparation method of the packaging structure, which comprises the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises one prefabricated packaging unit or a plurality of stacked prefabricated packaging units; each prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer and a prefabricated buffer layer, wherein the material of the prefabricated buffer layer comprises an organic polymer, and the organic polymer has a structural formula Si-O-R, wherein R represents a hydrocarbon group;
performing heat treatment on the packaging structure precursor, and generating a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer to obtain a packaging unit formed by a laminated structure of the first inorganic packaging layer, the first transition layer and the buffer layer; wherein the first transition layer comprises a silicon-containing oxynitride. Further, the silicon-containing oxynitride includes silicon oxynitride (SiON), and further, the material of the first transition layer is SiON.
Further, a first transition layer is generated at a contact area between the pre-fabricated buffer layer and the pre-fabricated first inorganic encapsulation layer.
In some embodiments, a preformed second inorganic encapsulation layer is provided on a side of the preformed buffer layer of at least one preformed encapsulation unit remote from the preformed first inorganic encapsulation layer prior to heat treating the encapsulation structure precursor. Further, the material of the prefabricated second inorganic packaging layer is at least one selected from silicon nitride, silicon oxynitride, silicon dioxide and boron silicon nitride.
In some embodiments, after the packaging structure precursor is subjected to heat treatment, a second transition layer is generated between the prefabricated second inorganic packaging layer and the prefabricated buffer layer, so as to obtain a packaging unit formed by a stacked structure of the first inorganic packaging layer, the first transition layer, the buffer layer, the second transition layer and the second inorganic packaging layer; wherein the second transition layer comprises a silicon-containing oxynitride. Further, the silicon-containing oxynitride includes silicon oxynitride (SiON), and further, the material of the second transition layer is a SiON layer. It is conceivable that the material of the prefabricated second inorganic encapsulation layer at this time comprises silicon nitride.
In the embodiment of the application, the principle of generating the transition layer between the prefabricated second inorganic packaging layer and the prefabricated buffer layer is the same as the principle of generating the transition layer between the prefabricated first inorganic packaging layer and the prefabricated buffer layer, namely, silicon nitride and an organic polymer form SiON under the heat treatment condition.
In some embodiments, the packaging structure precursor comprises a plurality of stacked prefabricated packaging units, and the packaging structure precursor is subjected to heat treatment, so that a third transition layer is generated between two adjacent prefabricated packaging units, and a packaging structure formed by the stacked structure of the packaging units, the third transition layer and the packaging units is obtained. Wherein the third transition layer comprises a silicon-containing oxynitride. Further, the silicon-containing oxynitride includes silicon oxynitride (SiON), and further, the material of the second transition layer is a SiON layer.
In some embodiments, the preformed first inorganic encapsulation layer, preformed buffer layer in the encapsulation structure precursor in the method of preparation may refer to the encapsulation structure previously described. It is understood that in the prefabricated encapsulation unit, the outermost side may be a prefabricated second inorganic encapsulation layer or a prefabricated buffer layer. Wherein, in the packaging structure precursor, after heat treatment, a transition layer (such as a SiON layer) can be formed between the prefabricated buffer layer and the prefabricated first inorganic packaging layer (or the second inorganic packaging layer).
Further, the preparation of the prefabricated buffer layer comprises the following steps: forming a flowable liquid film on the prefabricated inorganic packaging layer by adopting a buffer layer material, and solidifying to obtain a prefabricated buffer layer; wherein the curing is ultraviolet curing and/or thermal curing.
In some embodiments, the material of the preformed first inorganic encapsulation layer comprises silicon nitride. The Si-O-R of the organic polymer reacts with the silicon nitride to form a SiON layer.
In embodiments of the present application, the organic polymer has the formula Si-O-R, wherein R represents a hydrocarbon group, e.g., a saturated alkane, which loses one H atom, such as ethane (CH) 3 CH 3 ) Loss of one H atom to-CH 2 CH 3 Becomes ethyl. The inorganic packaging layer is a silicon nitride film layer (SiNx: H). It is conceivable that the transition layer is obtained by reacting an organic polymer containing a Si-O-R structure with a silicon nitride film layer, so that the barrier property is excellent, and the water-oxygen barrier property of the package structure is greatly enhanced by matching with an inorganic package layer. The buffer layer has softer film quality and smaller stress, has better planarization performance, and further can effectively improve the barrier capability of the inorganic packaging layer.
Further, the material of the pre-formed buffer layer further includes at least one of an oxide and an oxynitride. The oxide comprises at least one of silicon dioxide, aluminum oxide, zirconium oxide and hafnium oxide; the nitrogen oxide includes at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride, and hafnium oxynitride. Further, the average particle diameter of the oxide is 1 to 15nm, and may be, for example, 1 to 10nm, 3 to 15nm, 3 to 10nm, or the like. Further, the average particle diameter of the oxynitride is 1 to 15nm, and may be, for example, 1 to 10nm, 3 to 15nm, 3 to 10nm, or the like.
In some embodiments, a preformed first inorganic encapsulation layer is formed in the encapsulation structure precursor; forming a prefabricated buffer layer on the prefabricated first inorganic packaging layer; the method further comprises the step of hydroxyl-increasing surface pretreatment before the prefabricated buffer layer is formed on the prefabricated first inorganic packaging layer; the hydroxyl-increasing surface pretreatment includes ozone treatment or plasma treatment. Wherein the time for the surface pretreatment of the hydroxyl-increasing groups is 0.5-10min. Further, the plasma used for the plasma treatment may be an oxygen-containing plasma, for example, oxygen-containing plasma including O 2 Plasma, N 2 At least one of the O plasmas.
Specifically, to form a thicker intermediate dense SiON layer, one can reduce the thickness of the SiNx by patterning the organic buffer and inducing layer prior to forming the SiNx: performing oxygen-containing plasma or O on surface of H film layer 3 Pretreatment, which is to lead SiNx: the H film layer has more-OH bonds formed on the surface, increases the degree of hydrolysis polycondensation reaction with the organic buffer and induction layer, and is easier to form SiON layer.
In some embodiments, the temperature of the heat treatment is 80 to 150 ℃. The heat treatment time is 0.5-10 h. For example, the temperature of the heat treatment is 80 ℃, 90 ℃, 100 ℃, 120 ℃, 140 ℃ or 150 ℃; the time of the heat treatment may be 0.5h, 1h, 2h, 4h, 5h, 6h, 8h, 9h or 10h. For example, the heat treatment is carried out at a temperature of 120℃for a period of 5 hours.
In some embodiments, the buffer layer has a thickness of 0.1 to 20um. The thickness of the first inorganic encapsulation layer is 50-2000 nm. The organic polymer is obtained by polymerizing polyurethane acrylic ester and polydimethylsiloxane.
In one embodiment, referring to fig. 3, the method for manufacturing the package structure includes the following steps:
providing an encapsulation structure precursor, wherein the encapsulation structure precursor comprises one prefabricated encapsulation unit comprising a stacked prefabricated first inorganic encapsulation layer 130a 'and a prefabricated first buffer layer 150a', the material of the prefabricated buffer layer comprising an organic polymer having the formula Si-O-R, wherein R represents a hydrocarbon group;
Performing heat treatment on the packaging structure precursor to generate a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer, so as to obtain a packaging unit formed by a stacked structure of the first inorganic packaging layer 130a, the first transition layer 140a and the first buffer layer 150 a; wherein the first transition layer is a SiON layer.
Further, with continued reference to fig. 3, a substrate 110 provided with a light emitting device 120 is provided, on which preparation of the package structure precursor is performed, including:
forming a prefabricated first inorganic encapsulation layer 130a' on the light emitting element 120;
a thin film is formed on the prefabricated first inorganic encapsulation layer 130a 'using the material of the buffer layer to obtain a prefabricated first buffer layer 150a'.
In a specific embodiment, referring to fig. 4, the method for preparing the package structure includes the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises a prefabricated packaging unit, the prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer 130a ', a prefabricated first buffer layer 150a' and a prefabricated second inorganic packaging layer 130b ', and the material of the prefabricated first buffer layer 150a' comprises an organic polymer, and the organic polymer has a structural formula Si-O-R, wherein R represents a hydrocarbon group;
And performing heat treatment on the packaging structure precursor, so that a first transition layer is generated between the prefabricated first buffer layer 150a 'and the prefabricated first inorganic packaging layer 130a', and a second transition layer is generated between the prefabricated first buffer layer 150a 'and the prefabricated second inorganic packaging layer 130b', thereby obtaining the packaging unit formed by the laminated structure of the first inorganic packaging layer 130a, the first transition layer 140a, the first buffer layer 150a, the second transition layer 140b and the second inorganic packaging layer 130 b. Wherein, the first transition layer and the second transition layer are both SiON layers; the prefabricated first inorganic packaging layer and the prefabricated second inorganic packaging layer are both silicon nitride film layers, and further, the silicon nitride film layers are film layers containing H atoms.
Further, with continued reference to fig. 4, a substrate 110 provided with a light emitting device 120 is provided, on which preparation of the package structure precursor is performed, including:
forming a prefabricated first inorganic encapsulation layer 130a' on the light emitting element 120;
forming a thin film on the prefabricated first inorganic encapsulation layer 130a 'using the material of the buffer layer to obtain a prefabricated first buffer layer 150a';
a prefabricated second inorganic encapsulation layer 130b 'is formed on the prefabricated first buffer layer 150 a'.
In some embodiments, the organic polymer containing a Si-O-R structure may be an organosilane. Further, organosilanes can be prepared from polyurethane acrylates (PUA) and Polydimethylsiloxane (PDMS). The buffer layer has softer film quality and smaller stress, can be generally prepared by a solution method, has better planarization performance, and can further effectively improve the barrier capability of the inorganic packaging layer by planarization of the deposition surface.
In the embodiment of the application, the inorganic packaging layers such as the first inorganic packaging layer and the second inorganic packaging layer have stronger capability of blocking water and oxygen; in addition, the light-emitting diode also has higher visible light transmittance. The inorganic packaging layer can be deposited by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and the film layer internally contains more H-doped atoms. Specifically, siH is used as the reactive source gas in the PECVD process 4 If gas is used, the silicon nitride film obtained after the process contains a lot of H atoms.
In some embodiments, the formation of the prefabricated first inorganic packaging layer of the present application may be performed on the display area/packaging-required area of the substrate by using a common coating method such as magnetron sputtering, evaporation, chemical vapor deposition, atomic layer deposition, molecular layer deposition, ink-jet printing, etc. Other prefabricated inorganic encapsulation layers of the present application can be made using this method.
In some embodiments, a preformed first buffer layer is formed over the preformed first inorganic encapsulation layer. Specifically, the embodiment of the application may use slit gluing, ink-jet printing, chemical vapor deposition, liquid deposition, and other methods to form the prefabricated first buffer layer on the display area of the display screen, that is, on the prefabricated first inorganic packaging layer. Other pre-formed buffer layers of the present application can be made using this method.
For example, the preparation of the prefabricated first buffer layer comprises the following steps: forming a flowable liquid film on the prefabricated first inorganic packaging layer by adopting a buffer layer material, and solidifying to obtain a first buffer layer; wherein the curing is ultraviolet curing and/or thermal curing. Further, a flowable liquid film is formed on the preformed first inorganic encapsulation layer by an immersion method, a paste application process, or an ink jet process. The buffer layer material is a precursor of the buffer layer, is a liquid with lower viscosity, and can form a flowable liquid film on the prefabricated first packaging film layer through an immersion method, a gluing process or an ink-jet process; and then the internal precursor is crosslinked by ultraviolet curing or heat curing and the like, so that the solid film is finally formed. The buffer layer is cured by ultraviolet, and the ultraviolet curing is rapid and has better uniformity, so that the buffer layer material can comprise a photoinitiator and a photosensitive material.
The prefabricated second inorganic packaging layer can be made of the same material and the same preparation method as those of the prefabricated first inorganic packaging layer.
Further, a prefabricated second inorganic packaging layer is formed on the prefabricated first buffer layer, and the prefabricated second inorganic packaging layer is at least larger than the coating range of the prefabricated buffer layer (such as the first buffer layer). Specifically, in combination with the above, the coating range of the buffer layer is slightly smaller than that of the first inorganic encapsulation layer; for example, the edge of the buffer layer is 0.1-5 mm smaller than the first inorganic encapsulation layer; and the edge of the second inorganic encapsulation layer should be 0.1-5 mm larger than the first buffer layer. In the formed packaging structure, the first inorganic packaging layer and the second inorganic packaging layer are in a state of wrapping the first buffer layer together, so that the situation that the first buffer layer with weak blocking capability is invaded by water and oxygen to cause failure at the edge part of the packaging is ensured. That is, the buffer layer has a smaller size than the inorganic encapsulation layer above and below it to prevent the edge from being invaded by water and oxygen.
In some embodiments, the buffer layer may have a thickness of 0.1 to 20um. The thickness of the buffer layer may be determined based on the actual Thin Film Encapsulation (TFE) structure.
In this embodiment of the application, the main role of buffer layer is to buffer the stress that receives when the display receives buckling, and its high mobility can also cover impurity, dust etc. on the pixel effectively simultaneously, makes the edges and corners of impurity passivated to effectively improve the encapsulation effect of buffer layer. In addition, by adjusting its thickness, the stress neutral axis of the flexible display screen when bent can also be adjusted. The neutral axis is strategically arranged at the position of the weaker device structure, so that the bending resistance of the display screen can be effectively improved.
The prefabricated buffer layer has a large number of Si-O-R bonds, and the chemical bonds are easy to generate hydrolytic condensation reaction with hydrogenated silicon nitride (SiNx: H) in the inorganic packaging layer, and a compact SiON film, namely a transition layer, is formed between the inorganic packaging layer and the buffer layer.
In some embodiments, the present application can form a dense thin film layer, i.e., a transition layer (SiON layer), between the preformed inorganic encapsulation layer and the preformed buffer layer by heat treatment.
Specifically, the deposited film is subjected to heat treatment, so that the organic polymer and two adjacent layers of SiNx: after the H film reacts, a dense SiON layer is formed between the two films. Further, the SiON layer has a thickness of 2 to 30nm. According to the embodiment of the application, the compact film layer is formed, so that the WVTR of 1-2 orders of magnitude can be reduced on the basis of an original packaging structure, namely, the water-oxygen barrier property is better. For example, the heating device may be a heated OVEN (OVEN).
In this embodiment, the heat treatment is performed on the film layer, so that SiNx in the silicon nitride film layer: the H and Si-O-R chemical bond in the organic polymer undergo hydrolytic condensation reaction, so that a compact film layer, namely a SiON layer, is formed, and the SiON layer is positioned near the interface of the inorganic packaging layer and the buffer layer.
By heat treatment, the reaction of the hydrolytic condensation reaction can be referred to as the following reaction formula:
in the examples herein, first, an organic polymer (e.g., organosilane) near the interface is hydrolyzed to form an intermediate product with-H bonds, while SiNx: h bonds in H are produced by O-containing pretreatment and hydrolysis with organic polymers to produce small amounts of H 2 O reacts to form an intermediate product with an-OH bond. Under the condition of heating, the two intermediate products are dehydrated and polycondensed to form tightly connected Si-O-Si-N bonds, so as to form a SiON layer. In the process of continuing the reaction, under the induction of the organic polymer, the SiNx originally containing more H atoms and being loose: the H in the H film is continuously consumed and forms tightly bound N-Si-O bonds, such that the otherwise loose SiNx film forms a dense SiON film in the interfacial region. More, due to the generation of film layers with different densification degrees, the film layers originally exist in SiNx: the water-oxygen channels in the H and buffer layers are altered so that the water-oxygen channels are longer, thereby further improving the water-oxygen barrier capability.
With continued reference to fig. 5, an embodiment of the present application further provides a light emitting device, including:
a substrate 110;
a light emitting element 120 disposed on the substrate 110;
the package structure 100 is disposed on the light emitting element 120.
The package structure 100 in the light emitting device is referred to the above package structure or the package structure prepared by the above method.
In some embodiments of the present application, the substrate is used to carry TFT, OLED, QLED or a liquid crystal component, and may be a rigid substrate or a flexible substrate. For example, the rigid substrate may be made of ceramic material, various glass materials, etc.; for example, the flexible substrate may be PI (polyimide film) and its derivatives, PEN (polyethylene naphthalate), PEP (phosphoenolpyruvic acid), diphenylene ether resin, or the like.
In some embodiments of the present application, the light emitting element may be an OLED device, other functional device/film layer. According to different technologies and applications, the light emitting element is exposed, and the light emitting element needs to be protected by covering the packaging film. Among other things, an OLED device may include a cathode, an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and the like. For other functional devices/layers, if PMOLED (passive-driven OLED), pixel definition layers, support column layers, etc. are included; in the case of an AMOLED (active drive OLED), it may contain thin film transistor drive devices, pixel definition layers, etc. The OLED device refers to an organic light-emitting diode, and the electrode material of the OLED device can be metal, alloy, conductive oxide or conductive organic matter; the other materials can be various organic matters, quantum dot materials and functional organic matters. The biggest feature of OLED devices is that they fail and fail once they are attacked by water and oxygen.
In some embodiments of the present application, the light-emitting element includes an anode layer, a hole function layer, a light-emitting layer, an electron function layer, and a cathode layer, which are sequentially stacked.
In some embodiments, a light emitting device includes:
an anode layer disposed on the substrate;
a hole function layer disposed on the anode layer;
a light emitting layer disposed on the hole function layer;
an electronic functional layer disposed on the light emitting layer;
a cathode layer disposed on the electronic functional layer;
and the packaging structure is arranged on the cathode layer.
In some embodiments, a light emitting device includes:
a cathode layer disposed on the substrate;
an electron functional layer disposed on the cathode layer;
a light-emitting layer disposed on the electronic functional layer;
a hole function layer disposed on the light emitting layer;
an anode layer disposed on the hole function layer;
and the packaging structure is arranged on the anode layer.
The embodiment of the application provides a display device, which is provided with the packaging structure. Display devices include, but are not limited to, cell phones, televisions, tablet computers, displays, VR/AR devices, computers, vehicle mounted displays, or any product or component having display functionality.
The present application has been conducted in succession with a number of tests, and the invention will now be described in further detail with reference to a few test results, as will be described in detail below in connection with specific examples.
Example 1
The present embodiment provides a package structure including a package unit including a stacked first inorganic package layer (thickness 500 nm), a first transition layer (thickness 4 nm), and a buffer layer (thickness 4000 nm). The material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer is a SiON layer; the first inorganic packaging layer is a silicon nitride film layer.
The preparation method of the packaging structure of the embodiment comprises the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises a prefabricated packaging unit, the prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer and a prefabricated buffer layer, and the material of the prefabricated buffer layer comprises an organic polymer, and the organic polymer has a structural formula Si-O-R, wherein R represents a hydrocarbon group;
and carrying out heat treatment on the packaging structure precursor, and carrying out heat treatment for 5 hours at 120 ℃ to generate a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer, thereby obtaining the packaging unit formed by the laminated structure of the first inorganic packaging layer, the first transition layer and the buffer layer.
Example 2
The embodiment provides a package structure, which comprises a package unit, wherein the package unit comprises a first inorganic package layer (thickness 400 nm), a first transition layer (thickness 4 nm), a buffer layer (thickness 4000 nm), a second transition layer (thickness 3.8 nm) and a second inorganic package layer (thickness 500 nm) which are stacked. In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer and the second transition layer are both SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers.
The preparation method of the packaging structure of the embodiment comprises the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises a prefabricated packaging unit, the prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer, a prefabricated buffer layer and a prefabricated second inorganic packaging layer, and the material of the prefabricated buffer layer comprises an organic polymer, and the organic polymer has a structural formula Si-O-R, wherein R represents a hydrocarbon group;
and carrying out heat treatment on the packaging structure precursor, and carrying out heat treatment for 5 hours at 120 ℃ to generate a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer and a second transition layer between the prefabricated second inorganic packaging layer and the prefabricated buffer layer, thereby obtaining the packaging unit formed by the laminated structure of the first inorganic packaging layer, the first transition layer, the buffer layer, the second transition layer and the second inorganic packaging layer.
Example 3
The embodiment provides a packaging structure, which comprises a first packaging unit and a second packaging unit which are stacked; the first packaging unit comprises a first inorganic packaging layer, a first transition layer and a buffer layer which are stacked; the second packaging unit comprises a first inorganic packaging layer, a first transition layer, a buffer layer, a second transition layer and a second inorganic packaging layer which are stacked; a third transition layer is arranged between the first packaging unit and the second packaging unit. Specifically, the package structure of the present embodiment includes a stacked first inorganic package layer (thickness 500 nm), a first transition layer (thickness 4 nm), a buffer layer (thickness 2000 nm), a third transition layer (thickness 3.8 nm), a first inorganic package layer (thickness 400 nm), a first transition layer (thickness 3 nm), a buffer layer (thickness 2000 nm), a second transition layer (thickness 3.5 nm), and a second inorganic package layer (thickness 500 nm).
In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer, the second transition layer and the third transition layer are all SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers.
The preparation method of the packaging structure of the embodiment comprises the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises two prefabricated packaging units, the first prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer and a prefabricated buffer layer, the second prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer, a prefabricated buffer layer and a prefabricated second inorganic packaging layer, and the material of the prefabricated buffer layer comprises an organic polymer which has a structural formula Si-O-R, wherein R represents a hydrocarbon group;
and carrying out heat treatment on the packaging structure precursor, and carrying out heat treatment for 5 hours at 120 ℃ to generate a third transition layer between two prefabricated packaging units, generate a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer, and generate a second transition layer between the prefabricated second inorganic packaging layer and the prefabricated buffer layer, thereby obtaining the packaging structure formed by the laminated structure of the first inorganic packaging layer, the first transition layer, the buffer layer, the third transition layer, the first inorganic packaging layer, the first transition layer, the buffer layer, the second transition layer and the second inorganic packaging layer.
Example 4
The embodiment provides a package structure, which includes a package unit including a stacked first inorganic package layer (thickness 50 nm), a first transition layer (thickness 2 nm), a buffer layer (thickness 500 nm), a second transition layer (thickness 2 nm), and a second inorganic package layer (thickness 500 nm). In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer and the second transition layer are both SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers. Other conditions were the same as in example 2.
Example 5
The embodiment provides a package structure, which comprises a package unit, wherein the package unit comprises a first inorganic package layer (thickness 1000 nm), a first transition layer (thickness 12 nm), a buffer layer (thickness 10 um), a second transition layer (thickness 10 nm) and a second inorganic package layer (thickness 1000 nm) which are stacked. In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer and the second transition layer are both SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers. Other conditions were the same as in example 2.
Example 6
The embodiment provides a package structure, which comprises a package unit, wherein the package unit comprises a stacked first inorganic package layer (thickness 500 nm), a first transition layer (thickness 30 nm), a buffer layer (thickness 5 um), a second transition layer (thickness 9 nm) and a second inorganic package layer (thickness 2000 nm). In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer and the second transition layer are both SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers. Other conditions were the same as in example 2.
Example 7
The embodiment provides a package structure, which comprises a package unit, wherein the package unit comprises a stacked first inorganic package layer (with the thickness of 2000 nm), a first transition layer (with the thickness of 30 nm), a buffer layer (with the thickness of 20 um), a second transition layer (with the thickness of 20 nm) and a second inorganic package layer (with the thickness of 1000 nm). In this embodiment, the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the first transition layer and the second transition layer are both SiON layers; the first inorganic packaging layer and the second inorganic packaging layer are both silicon nitride film layers. Other conditions were the same as in example 2.
Comparative example 1
Comparative example 1 provides a package structure comprising an inorganic package layer, the inorganic package layer being a silicon nitride film layer. The thickness of the inorganic encapsulation layer of comparative example 1 was substantially the same as the total thickness of the inorganic encapsulation layer, the transition layer and the buffer layer stacked in example 1 (a difference of less than 50 nm).
Test example 1
Substrates having light emitting elements were prepared, and OLED light emitting devices were prepared using the package structures of examples 1 to 3 and comparative example 1, respectively, denoted as device examples 1 to 3 and device comparative example 1, and the water-oxygen barrier abilities (e.g., water vapor transmission rates WVTR) of the OLED light emitting devices were examined and are shown in table 1.
TABLE 1
| Project | WVTR(g/m 3 /day) |
| Example 1 | 0.000018 |
| Example 2 | 0.000015 |
| Example 3 | 0.00001 |
| Comparative example 1 | 0.0014 |
As is clear from Table 1, the Water Vapor Transmission Rate (WVTR) of example 1 is 0.000011g/m 3 According to day, the water vapor permeability of the examples is 0.000015g/m 3 According to day, the water vapor permeability of example 3 was 0.000018g/m 3 By day, whereas the water vapor transmission rate of comparative example 1 was as high as 0.0013g/m 3 From this, it is evident that the water vapor transmission rates of examples 1 to 3 of the present application are lower than that of comparative example 1, and that the water oxygen barrier abilities of examples 1 to 3 of the present application are higher than that of comparative example 1. Therefore, the packaging structure has excellent water-oxygen barrier performance and meets the application requirements of the light-emitting device.
In addition, the package structure of example 2 includes an inorganic package layer, a transition layer, a buffer layer, a transition layer, and an inorganic package layer stacked, and the package structure of example 1 includes an inorganic package layer, a transition layer, and a buffer layer, and as can be seen from table 1, the water vapor transmission rate of example 2 is smaller than that of example 1, that is, the water oxygen barrier capability of example 2 is stronger than that of example 1, that is, the water vapor transmission rate of the package structure of the two-layer transition layer is lower than that of the one-layer transition layer. Similarly, the water-oxygen barrier capability of example 3 is stronger than that of example 2, i.e., the water vapor transmission rate of the package structure forming the four-layer transition layer is lower than that of the package structure forming the two-layer transition layer. Therefore, the larger the number of layers of the inorganic encapsulation layer, the transition layer and the buffer layer is, the stronger the water-oxygen barrier ability is within the appropriate thickness range of the encapsulation structure.
In summary, in the packaging structure of the application, the transition layer (SiON layer) between the inorganic packaging layer and the buffer layer is formed through reaction, and the SiON layer has very thin thickness and excellent compactness, so that the overall thickness of the packaging structure can be reduced, the flexibility of the product can be improved, and the water-oxygen blocking capability of the packaging structure can be ensured. The packaging structure is completed in the packaging stage of manufacturing the display panel, and the thickness of the packaging film is reduced by introducing a process for forming the compact packaging film. The packaging structure can be applied to the fields of flat panel display, television display, electronic paper, logic and storage circuits, flexible display and the like.
In the foregoing embodiments of the present application, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
The above describes in detail a package structure, a method for manufacturing the package structure, and a light emitting device provided in the embodiments of the present application, and specific examples are applied to illustrate the principles and embodiments of the present application, where the descriptions of the above embodiments are only used to help understand the method and core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (18)
1. A package structure, characterized in that the package structure comprises one package unit or a plurality of stacked package units; each packaging unit comprises a first inorganic packaging layer, a first transition layer and a buffer layer which are sequentially stacked;
the material of the buffer layer comprises an organic polymer having the structural formula Si-O-R, wherein R represents a hydrocarbon group; the material of the first transition layer comprises silicon-containing oxynitride.
2. The package structure of claim 1, wherein in the package structure, at least one of the package units further comprises a second inorganic package layer, wherein the second inorganic package layer is disposed on a side of the buffer layer away from the first transition layer; and/or
The material of the second inorganic packaging layer comprises at least one of silicon nitride, silicon oxynitride, silicon dioxide and boron silicon nitride.
3. The package structure of claim 2, wherein the package unit further comprises a second transition layer disposed between the second inorganic package layer and the buffer layer; and/or the material of the second transition layer comprises silicon-containing oxynitride.
4. The package structure of claim 1, wherein the package structure comprises a plurality of stacked package units, the package structure further comprising a third transition layer disposed between two adjacent package units; and/or, the material of the third transition layer comprises silicon-containing oxynitride.
5. The package structure of claim 1, wherein the material of the first inorganic package layer comprises silicon nitride; and/or the material of the buffer layer further comprises at least one of an oxide and an oxynitride.
6. The package structure of claim 5, wherein the oxide is at least one selected from the group consisting of silicon dioxide, aluminum oxide, zirconium oxide, hafnium oxide; the nitrogen oxide comprises at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride and hafnium oxynitride; and/or
The average grain diameter of the oxide is 1-15 nm; and/or
The average particle size of the nitrogen oxides is 1-15 nm.
7. The package structure of any one of claims 1-4, wherein the silicon-containing oxynitride comprises silicon oxynitride.
8. The package structure according to any one of claims 1 to 4, wherein a material of the first transition layer is silicon oxynitride; and/or
The second transition layer is made of silicon oxynitride; and/or
The material of the second transition layer is silicon oxynitride.
9. The package structure according to any one of claims 1 to 8, wherein in the package unit, a thickness of the buffer layer is 0.1 to 20um; and/or
The thickness of the first transition layer is 2-30 nm; and/or
The thickness of the second transition layer is 2-30 nm; and/or
The thickness of the third transition layer is 2-30 nm; and/or
The thickness of the first inorganic packaging layer is 50-2000 nm; preferably, the method comprises the steps of,
the thickness of the first inorganic packaging layer is 100-1000 nm.
10. The preparation method of the packaging structure is characterized by comprising the following steps:
providing a packaging structure precursor, wherein the packaging structure precursor comprises one prefabricated packaging unit or a plurality of stacked prefabricated packaging units; each prefabricated packaging unit comprises a stacked prefabricated first inorganic packaging layer and a prefabricated buffer layer, wherein the material of the prefabricated buffer layer comprises an organic polymer, and the organic polymer has a structural formula of Si-O-R, wherein R represents a hydrocarbon group;
performing heat treatment on the packaging structure precursor, and generating a first transition layer between the prefabricated buffer layer and the prefabricated first inorganic packaging layer to obtain a packaging unit formed by a laminated structure of the first inorganic packaging layer, the first transition layer and the buffer layer; wherein the first transition layer comprises a silicon-containing oxynitride.
11. The method of manufacturing a package structure according to claim 10, wherein a prefabricated second inorganic package layer is provided on a side of the prefabricated buffer layer of at least one of the prefabricated package units remote from the prefabricated first inorganic package layer before the heat treatment of the package structure precursor;
The material of the prefabricated second inorganic packaging layer is at least one selected from silicon nitride, silicon oxynitride, silicon dioxide and boron silicon nitride.
12. The method for manufacturing a package structure according to claim 11, wherein after the package structure precursor is subjected to heat treatment, a second transition layer is generated between the prefabricated second inorganic package layer and the prefabricated buffer layer, so as to obtain a package unit formed by a stacked structure of the first inorganic package layer, the first transition layer, the buffer layer, the second transition layer and the second inorganic package layer; wherein the second transition layer comprises a silicon-containing oxynitride.
13. The method for manufacturing a package structure according to claim 10, wherein the package structure precursor comprises a plurality of stacked prefabricated package units, and the package structure precursor is subjected to heat treatment, so that a third transition layer is generated between two adjacent prefabricated package units, and a package structure formed by the stacked package units, the third transition layer and the package unit is obtained; wherein the third transition layer comprises a silicon-containing oxynitride.
14. The method of manufacturing a package structure according to any one of claims 10 to 13, wherein the material of the prefabricated first inorganic package layer comprises silicon nitride;
The silicon-containing oxynitride comprises silicon oxynitride;
the material of the prefabricated buffer layer further comprises at least one of oxide and oxynitride; the oxide comprises at least one of silicon dioxide, aluminum oxide, zirconium oxide and hafnium oxide; the nitrogen oxide comprises at least one of silicon oxynitride, aluminum oxynitride, zirconium oxynitride and hafnium oxynitride; the average grain diameter of the oxide is 1-15 nm; the average particle size of the nitrogen oxides is 1-15 nm.
15. The method of manufacturing a package structure according to any one of claims 10 to 13, wherein the temperature of the heat treatment is 80 to 150 ℃; and/or
The time of the heat treatment is 0.5-10 h; and/or
The first transition layer is a silicon oxynitride layer; and/or
The second transition layer is a silicon oxynitride layer; and/or
The third transition layer is a silicon oxynitride layer.
16. The method of manufacturing a package structure according to claim 10, wherein a preformed first inorganic package layer is formed; forming a prefabricated buffer layer on the prefabricated first inorganic packaging layer; the method further comprises the step of carrying out surface pretreatment on the prefabricated first inorganic packaging layer before forming the prefabricated buffer layer on the prefabricated first inorganic packaging layer;
The surface pretreatment comprises ozone treatment or plasma treatment, wherein the time of the surface pretreatment is 0.5-10min.
17. The method for manufacturing a package structure according to claim 10, wherein the organic polymer is obtained by polymerizing urethane acrylate and polydimethylsiloxane; and/or
The thickness of the buffer layer is 0.1-20 um; and/or
The thickness of the first inorganic packaging layer is 50-2000 nm; preferably, the method comprises the steps of,
the thickness of the first inorganic packaging layer is 100-1000 nm.
18. A light-emitting device comprising a substrate, a light-emitting element, and the package structure according to any one of claims 1 to 9; or, comprising a substrate, a light emitting element, and a package structure prepared by the method of any one of claims 10 to 17;
the light-emitting element is arranged on the substrate, and the packaging structure is arranged on the light-emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211145582.3A CN117794281A (en) | 2022-09-20 | 2022-09-20 | Packaging structure, manufacturing method of packaging structure and light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211145582.3A CN117794281A (en) | 2022-09-20 | 2022-09-20 | Packaging structure, manufacturing method of packaging structure and light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117794281A true CN117794281A (en) | 2024-03-29 |
Family
ID=90383957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211145582.3A Pending CN117794281A (en) | 2022-09-20 | 2022-09-20 | Packaging structure, manufacturing method of packaging structure and light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117794281A (en) |
-
2022
- 2022-09-20 CN CN202211145582.3A patent/CN117794281A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1711338B1 (en) | Plastic substrate having multi-layer structure and method for preparing the same | |
| KR101452680B1 (en) | Gas barrier film, manufacturing process for gas barrier film, and electronic device | |
| TWI547369B (en) | Glass-plastic laminate device, processing line and methods therefor | |
| EP2660042B1 (en) | Method for manufacturing gas-barrier film, gas-barrier film, and electronic device | |
| TWI510365B (en) | Multi-layered plastic substrate and method for manufacturing the same | |
| US11940683B2 (en) | Flexible multi-layered cover lens stacks for foldable displays | |
| KR101284958B1 (en) | A multi-layer plastic substrate having good dimensional stability and gas barrier properties and method for preparing the same | |
| TWI820384B (en) | Laminated substrate, manufacturing method of laminated body, laminated body, laminated body with components for electronic device, manufacturing method of electronic device | |
| KR100884183B1 (en) | Multi-layered Plastic Substrate having Excellent Surface Hardness and Gas Barrier Properties, and Fabrication Method Thereof | |
| KR101489959B1 (en) | Gas barrier film, method for preparing thereof and display display member comprising the same | |
| CN117794281A (en) | Packaging structure, manufacturing method of packaging structure and light-emitting device | |
| JP5757170B2 (en) | Method for producing gas barrier film | |
| KR101202545B1 (en) | Plastic substrate and method for manufacturing the same | |
| CN111356583B (en) | Barrier film | |
| KR101494883B1 (en) | Gas barrier film and its preparation method | |
| KR20220082203A (en) | Organic/inorganic multilayer thin film encapsulation using organic monomer thin film and a preparing method of the same | |
| WO2023121646A1 (en) | Improved adhesion layer in flexible coverlens | |
| TW202402519A (en) | Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with components for electronic device, and method for manufacturing electronic device do not easily peel off the formed polyimide film when a polyimide varnish is coated on the surface of the laminated substrate to form a polyimide film | |
| KR20210117677A (en) | Encapsulation film and fabricating method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |