CN117790489A - Manufacturing method of Micro LED display module and Micro LED display module - Google Patents
Manufacturing method of Micro LED display module and Micro LED display module Download PDFInfo
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- CN117790489A CN117790489A CN202311871567.1A CN202311871567A CN117790489A CN 117790489 A CN117790489 A CN 117790489A CN 202311871567 A CN202311871567 A CN 202311871567A CN 117790489 A CN117790489 A CN 117790489A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000004806 packaging method and process Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
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Abstract
The invention discloses a manufacturing method of a Micro LED display module and the display module, comprising the following steps: providing a substrate grown with a plurality of light emitting cells; forming a first electrode on the top of the light emitting unit, the first electrode also extending to the side wall of the light emitting unit; forming a packaging structure between the light-emitting units, wherein the packaging structure wraps at least part of the first electrode extending to the side wall area of the light-emitting unit, and forming an optical structure at the top of the light-emitting unit, and the optical structure covers the part of the first electrode located at the top area of the light-emitting unit; bonding a temporary carrier plate to a side of the light-emitting unit away from the substrate to temporarily bond the temporary carrier plate to the optical structure; stripping the substrate and bonding a circuit carrier plate to one side of the light-emitting unit away from the temporary carrier plate; and releasing the temporary bonding of the temporary carrier plate and the optical structure to remove the temporary carrier plate. Compared with the prior art, the Micro LED transfer device can stably transfer Micro LEDs, and is stable in structure and not easy to damage during transfer.
Description
Technical Field
The invention relates to a semiconductor device, in particular to the manufacture of a Micro LED display module.
Background
With the progress of display technology, the market is increasingly not full of disadvantages of low contrast, low color gamut, low response speed, and the like of LCDs (Liquid Crystal Display, liquid crystal displays), and disadvantages of burn-in, heavy particle feel, color shift, poor light comfort, and the like of OLEDs (Organic LightEmitting Display, organic light emitting displays). As the next generation display technology, the Micro LED display technology has the advantages of high contrast ratio, high color gamut, high response speed, ultrahigh resolution, long service life and the like, and has the advantages of LCD and OLED and has no defects. Micro LED also has the advantages of flexible display and low energy consumption, and is known as an ultimate display technology.
Fabrication of Micro LED displays requires transfer of millions of Micro LEDs onto a back plate, i.e., mass transfer. The prior mass transfer has the following methods, such as electrostatic force transfer technology, van der Waals force transfer technology, magnetic field force transfer technology, self-aligned roller transfer technology, self-assembled transfer technology and laser transfer technology, but has advantages and disadvantages. Such as van der waals force transfer techniques, it is difficult to achieve consistency of pick-up and release; the Micro LED assembled by the self-assembly transfer technology has poor push-pull force, is difficult to repair, and is easy to crack when the substrate is peeled off after transfer.
Therefore, a method for manufacturing a Micro LED display module and a Micro LED display module capable of solving the above problems are urgently needed.
Disclosure of Invention
The invention aims to provide a manufacturing method of a Micro LED display module and the Micro LED display module, which can stably transfer Micro LEDs, and has a stable structure and is not easy to damage during transfer.
In order to achieve the above purpose, the invention discloses a method for manufacturing a Micro LED display module, which comprises the following steps: providing a substrate grown with a plurality of light emitting cells; forming a first electrode on top of the light emitting unit, the first electrode also extending onto a sidewall of the light emitting unit; forming a packaging structure between the light emitting units, wherein the packaging structure wraps at least part of the first electrode extending to the side wall area of the light emitting unit, and an optical structure is formed on the top of the light emitting unit and covers the part of the first electrode located in the top area of the light emitting unit; bonding a temporary carrier plate to a side of the light emitting unit away from the substrate to temporarily bond the temporary carrier plate to the optical structure; peeling the substrate and bonding a circuit carrier plate to one side of the light-emitting unit away from the temporary carrier plate; and releasing the temporary bonding of the temporary carrier plate and the optical structure to remove the temporary carrier plate.
Compared with the prior art, the packaging structure directly connects a plurality of light-emitting units into a whole, and can effectively protect the light-emitting units, so that the Micro LED can be used for block transfer in a stable structure. Furthermore, the packaging structure protects the partial area of the first electrode at the side part of the light-emitting unit, and the optical unit protects the partial area of the first electrode at the top part of the light-emitting unit, so that the first electrode is effectively prevented from being broken when the substrate is peeled off.
Preferably, providing a substrate grown with a plurality of light emitting cells includes the steps of: providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate and an epitaxial layer formed on the substrate; dividing the epitaxial layer to form a plurality of independent light emitting structures; and forming an insulating layer on the side wall of the light-emitting structure, and enabling the upper side of the insulating layer to wrap the periphery of the top of the light-emitting structure.
Specifically, before forming the insulating layer on the sidewall of the light emitting structure, the method further includes the steps of: forming a transparent conductive layer on top of the light emitting structure; when an insulating layer is formed on the side wall of the light emitting structure, the upper side of the insulating layer also extends to the top of the light emitting unit and wraps the periphery of the transparent conductive layer. Wherein the transparent conductive layer is deposited on top of the light emitting structure. Specifically, the transparent conductive layer is an ITO layer.
Specifically, the periphery of the optical structure covers to a part of the upper side of the insulating layer, the first electrode extends to an area where the insulating layer is not wrapped at the top of the light emitting unit and is in contact with the transparent conductive layer, and the scheme enables the packaging structure to connect the light emitting units together through the insulating layer.
Preferably, the optical structure and the packaging structure are formed by spin-coating SU8 photoresist in one step, and the method is simple in process and high in processing efficiency.
Preferably, the step of removing the temporary carrier plate further comprises: forming a conductive circuit on a region of the first electrode, which is positioned on the side wall of the light emitting unit and is not wrapped by the packaging structure, wherein the conductive circuit is electrically connected with the circuit carrier plate; and a second electrode is further formed on one side, close to the substrate, of the light-emitting unit, and when a circuit carrier plate is bonded to one side, far away from the temporary carrier plate, of the light-emitting unit, the first bonding pad of the circuit carrier plate is welded with the second electrode.
Specifically, the area of the optical structure is smaller than the area of the top of the light emitting unit, and the conductive line also extends to the area of the first electrode, which is positioned on the top of the light emitting unit and is not covered by the optical structure.
Preferably, a second electrode is further formed on a side of the light emitting unit adjacent to the substrate, the first electrode extends onto the substrate along a side portion of the light emitting unit when forming the first electrode, and extends outwards along the substrate to form an electrode pad, the first pad of the circuit carrier is welded with the second electrode when bonding a circuit carrier to the light emitting unit, and the second pad of the circuit carrier is welded with the electrode pad.
Preferably, the cross section of the light emitting unit is gradually reduced from bottom to top, the side edge of the light emitting unit is inclined, and the insulating layer is conveniently formed.
The invention also discloses a Micro LED display module, which is manufactured by the manufacturing method of the Micro LED display module.
The invention also discloses a Micro LED display module, which comprises a circuit carrier plate, a plurality of light emitting units bonded on the circuit carrier plate, a first electrode formed at the top of each light emitting unit, an optical structure, and a packaging structure formed between the light emitting units and contacting the circuit carrier plate, wherein the first electrode also extends to the side wall of the light emitting unit, the optical structure covers the part of the first electrode located at the top area of the light emitting unit, and the packaging structure wraps the part of the first electrode extending to the side wall area of the light emitting unit.
Compared with the prior art, the optical structure covers the part of the first electrode, which is positioned at the upper area of the top of the light-emitting unit, and the packaging structure wraps the part of the first electrode, which extends to the upper area of the side wall of the light-emitting unit, so that the packaging structure directly connects a plurality of light-emitting units into a whole, the block transfer of the micro LED can be realized, and the optical unit protects the part of the first electrode, which is positioned at the top of the light-emitting unit, inside, and the first electrode is effectively prevented from being broken when the substrate is peeled off.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a Micro LED display module in embodiment 1 of the present invention.
Fig. 2 is a diagram showing a construction of a front part of a method for manufacturing a Micro LED display module according to embodiment 1 of the present invention.
Fig. 3 is a structural diagram of the latter part of the method for manufacturing a Micro LED display module in embodiment 1 of the present invention.
Fig. 4 is a flowchart of providing a substrate on which a plurality of light emitting cells are grown in a method of manufacturing a Micro LED display module according to the present invention.
Fig. 5 is a block diagram of a Micro LED display module in embodiment 1 of the present invention.
Fig. 6 is a flowchart of a method for manufacturing a Micro LED display module in embodiment 2 of the present invention.
Fig. 7 is a diagram showing a construction of a former part of a method for manufacturing a Micro LED display module in embodiment 2 of the present invention.
Fig. 8 is a structural diagram of the latter part of the method for manufacturing a Micro LED display module in embodiment 2 of the present invention.
Fig. 9 is a block diagram of a Micro LED display module in embodiment 2 of the present invention.
Detailed Description
In order to describe the technical content, the constructional features, the achieved objects and effects of the present invention in detail, the following description is made in connection with the embodiments and the accompanying drawings.
Example 1:
referring to fig. 1 to 3, the invention discloses a method for manufacturing a Micro LED display module, which comprises steps S1 to S6.
S1, referring to (a) in fig. 1 and 2, a substrate 10 grown with a plurality of light emitting cells 20 is provided.
Referring to fig. 4, step S1 includes the following steps a1 to a4:
referring to (a 1) of fig. 4, an epitaxial wafer is provided, the epitaxial wafer including a substrate 10 and an epitaxial layer 20a formed on the substrate 10.
Specifically, the epitaxial layer 20a includes an n-type layer 21, a light emitting layer 22, and a p-type layer 23.
Referring to (a 2) of fig. 4, the epitaxial layer 20a is divided to form a plurality of independent light emitting structures 20b.
Referring to (a 3) of fig. 4, a transparent conductive layer 24 is formed on top of the light emitting structure 20b.
Referring to (a 4) of fig. 4, an insulating layer 25 is formed on a sidewall of the light emitting structure 20b, and an upper side of the insulating layer 25 wraps a peripheral edge of a top of the light emitting structure 20b. Wherein the upper side of the insulating layer 25 also extends to the top of the light emitting structure 20b and wraps the periphery of the transparent conductive layer 24. Of course, the insulating layer 25 may be directly formed without providing the transparent conductive layer 24.
Preferably, one or more layers may be deposited when the insulating layer 25 is deposited on the light emitting structure 20b. The insulating layer 25 covers the peripheral edge of the top of the light emitting structure 20b and surrounds the side of the light emitting structure 20b.
Wherein a transparent conductive layer 24 is deposited on top of the light emitting structure 20b. Specifically, the transparent conductive layer 24 is an ITO layer.
S2, referring to (b) of fig. 1 and 2, a first electrode 30 is formed on top of the light emitting unit 20, and the first electrode 30 also extends onto a sidewall of the light emitting unit 20.
Wherein the first electrode 30 extends to an unwrapped area of the insulating layer 25 on top of the light emitting unit 20, contacting the transparent conductive layer 24 or the p-type layer 23. In this embodiment, the first electrode 30 is a P electrode.
Wherein the first electrode 30 extends onto the substrate 10 along a side of the light emitting unit 20 and outwardly extends along the substrate 10 to form an electrode pad 31.
S3, referring to (c) of fig. 1 and 2, an optical structure 40 is formed on top of the light emitting units 20, and a package structure 50 connecting a plurality of the light emitting units 20 together is formed between the light emitting units 20.
Wherein the optical structure 40 covers a portion of the first electrode 30 located at the top region of the light emitting unit 20, and a peripheral edge of the optical structure 40 covers a portion of the upper side of the insulating layer 25; the encapsulation structure 50 encapsulates at least a portion of the first electrode 30 extending to the sidewall region of the light emitting unit 20. This scheme allows the package structure 50 to connect the light emitting units 20 together through the insulating layer 25, facilitates overall transfer, and protects the electrode pads 31.
Preferably, the optical structure 40 and the packaging structure 50 are formed by spin-coating SU8 photoresist in one step, and the process is simple and the processing efficiency is high. The optical structure 40 and the package structure 50 are the same photoresist cured product.
Preferably, the height of the package structure 50 is smaller than the height of the light emitting unit 20.
S4, referring to fig. 1 and (d) of fig. 2, a temporary carrier 60 is bonded to a side of the light emitting unit 20 remote from the substrate 10, so that the temporary carrier 60 is temporarily bonded to the optical structure 40.
S5, referring to (e) in fig. 1 and 3, the substrate 10 is peeled off. Referring to fig. 1 and 3 (g), a circuit carrier 70 is bonded to the side of the light emitting unit 20 remote from the temporary carrier 60.
Wherein, a second electrode is further formed on a side of the light emitting unit 20 adjacent to the substrate 10, and when a circuit carrier 70 is bonded to the light emitting unit 20, the first bonding pad 71 of the circuit carrier 70 is further bonded to the second electrode, and the second bonding pad 72 of the circuit carrier 70 is bonded to the electrode bonding pad 31. The second electrode is an n-electrode.
S6, referring to (f) in FIGS. 1 and 3, the temporary bonding between the temporary carrier plate 60 and the optical structure 40 is released to remove the temporary carrier plate 60.
Preferably, the cross section of the light emitting unit 20 is gradually reduced from bottom to top, and the side of the light emitting unit 20 is inclined.
Referring to fig. 5, the invention also discloses a Micro LED display module 100, which is manufactured by the manufacturing method of the Micro LED display module.
Referring to fig. 5, the micro LED display module 100 includes a circuit carrier 70, a plurality of light emitting units 20 bonded on the circuit carrier 70, a first electrode 30 formed on top of each of the light emitting units 20, an optical structure 40, and a package structure 50 formed between the plurality of light emitting units 20 and contacting the circuit carrier 70, the first electrode 30 further extending onto a sidewall of the light emitting unit 20, the optical structure 40 covering a portion of the first electrode 30 located at an upper region of the top of the light emitting unit 20, the package structure 50 wrapping a portion of the first electrode 30 extending to an upper region of the sidewall of the light emitting unit 20.
Specifically, the optical structure 40 and the package structure 50 are the same photoresist cured product. The height of the package structure 50 is smaller than the height of the light emitting unit 20.
Specifically, the epitaxial layer 20a includes an n-type layer 21, a light emitting layer 22, and a p-type layer 23. The light emitting unit 20 includes an epitaxial layer 20a, a transparent conductive layer 24 formed on top of the epitaxial layer 20a, and an insulating layer 25 formed on a sidewall of the epitaxial layer 20a, and an upper side of the insulating layer 25 further wraps a peripheral edge of the epitaxial layer 20a. Wherein the upper side of the insulating layer 25 also extends to the top of the epitaxial layer 20a and wraps the periphery of the transparent conductive layer 24. Of course, the transparent conductive layer 24 may not be provided. The transparent conductive layer 24 is an ITO layer. The insulating layer 25 may be one or more layers. The cross section of the light emitting unit 20 is gradually reduced from bottom to top, and the side of the light emitting unit 20 is inclined.
Specifically, the first electrode 30 extends to an unwrapped area of the insulating layer 25 on top of the light emitting unit 20, in contact with the transparent conductive layer 24 or the p-type layer 23. The first electrode 30 extends onto the substrate 10 along a side portion of the light emitting unit 20, and extends outwardly along the substrate 10 to form an electrode pad 31, the first pad 71 of the circuit carrier 70 is soldered to the second electrode, and the second pad 72 of the circuit carrier 70 is soldered to the electrode pad 31.
Example 2:
referring to fig. 6, 7 and 8, the invention discloses a method for manufacturing a Micro LED display module, which comprises steps S1 to S7.
S1, referring to (a) in fig. 6 and 7, a substrate 10 grown with a plurality of light emitting cells 20 is provided.
Referring to fig. 4, step S1 includes the following steps a1 to a4:
referring to (a 1) of fig. 4, an epitaxial wafer is provided, the epitaxial wafer including a substrate 10 and an epitaxial layer 20a formed on the substrate 10.
Specifically, the epitaxial layer 20a includes an n-type layer 21, a light emitting layer 22, and a p-type layer 23.
Referring to (a 2) of fig. 4, the epitaxial layer 20a is divided to form a plurality of independent light emitting structures 20b.
Referring to (a 3) of fig. 4, a transparent conductive layer 24 is formed on top of the light emitting structure 20b.
Referring to (a 4) of fig. 4, an insulating layer 25 is formed on a sidewall of the light emitting structure 20b, and an upper side of the insulating layer 25 wraps a peripheral edge of a top of the light emitting structure 20b. Wherein the upper side of the insulating layer 25 also extends to the top of the light emitting structure 20b and wraps the periphery of the transparent conductive layer 24. Of course, the insulating layer 25 may be directly formed without providing the transparent conductive layer 24.
Preferably, one or more layers may be deposited when the insulating layer 25 is deposited on the light emitting structure 20b. The insulating layer 25 covers the peripheral edge of the top of the light emitting structure 20b and surrounds the side of the light emitting structure 20b.
Wherein a transparent conductive layer 24 is deposited on top of the light emitting structure 20b. Specifically, the transparent conductive layer 24 is an ITO layer.
S2, referring to (b) of fig. 6 and 7, a first electrode 30 is formed on top of the light emitting unit 20, and the first electrode 30 also extends onto a sidewall of the light emitting unit 20.
Wherein the first electrode 30 extends to an unwrapped area of the insulating layer 25 on top of the light emitting unit 20, contacting the transparent conductive layer 24 or the p-type layer 23. In this embodiment, the first electrode 30 is a P electrode.
S3, referring to (c) of fig. 6 and 7, an optical structure 40 is formed on top of the light emitting units 20, and a package structure 50 connecting a plurality of the light emitting units 20 together is formed between the light emitting units 20.
Wherein the optical structure 40 covers a portion of the first electrode 30 located at the top region of the light emitting unit 20. The peripheral edge of the optical structure 40 covers to a partial position of the upper side of the insulating layer 25; the encapsulation structure 50 encapsulates at least a portion of the first electrode 30 extending to the sidewall region of the light emitting unit 20. This solution allows the encapsulation structure 50 to connect the light emitting units 20 together through the insulating layer 25, facilitating the overall transfer.
Preferably, the optical structure 40 is formed by spin-coating SU8 photoresist in one step, and has simple process and high processing efficiency.
Preferably, the height of the package structure 50 is smaller than the height of the light emitting unit 20.
S4, referring to fig. 6 and 7 (d), a temporary carrier 60 is bonded to a side of the light emitting unit 20 away from the substrate 10, so that the temporary carrier 60 is temporarily bonded to the optical structure 40.
S5, referring to (e) in fig. 6 and 8, the substrate 10 is peeled off. Referring to fig. 6 and 8 (g), a circuit carrier 70 is bonded to the side of the light emitting unit 20 remote from the temporary carrier 60.
Wherein, a second electrode is further formed on a side of the light emitting unit 20 adjacent to the substrate 10, and the first bonding pad 71 of the circuit carrier 70 is further bonded to the second electrode when a circuit carrier 70 is bonded to a side of the light emitting unit 20 away from the temporary carrier 60. The second electrode is an n-electrode.
S6, referring to (f) in fig. 6 and 8, the temporary bonding between the temporary carrier 60 and the optical structure 40 is released to remove the temporary carrier 60.
S7, referring to (h) of fig. 6 and 8, a conductive line 80 is formed on a region of the first electrode 30, which is located at a sidewall of the light emitting unit 20 and is not surrounded by the encapsulation structure 50, and the conductive line 80 is electrically connected with the circuit carrier 70.
Wherein the area of the optical structure 40 is smaller than the area of the top of the light emitting unit 20, and the conductive line 80 further extends to the area of the first electrode 30 on the top of the light emitting unit 20 and not covered by the optical structure 40.
Preferably, the cross section of the light emitting unit 20 is gradually reduced from bottom to top, and the side of the light emitting unit 20 is inclined.
Referring to fig. 9, the invention also discloses a Micro LED display module 100, which is manufactured by the manufacturing method of the Micro LED display module.
Referring to fig. 9, the micro LED display module 100 includes a circuit carrier 70, a plurality of light emitting units 20 bonded to the circuit carrier 70, a first electrode 30 formed on top of each of the light emitting units 20, an optical structure 40, a conductive trace 80, and a package structure 50 formed between the plurality of light emitting units 20 and contacting the circuit carrier 70, the first electrode 30 further extending to a sidewall of the light emitting unit 20, the optical structure 40 covering a portion of the first electrode 30 located at a top region of the light emitting unit 20, the package structure 50 wrapping a portion of the first electrode 30 extending to a sidewall region of the light emitting unit 20, the conductive trace 80 being located at a sidewall of the light emitting unit 20 and not wrapped by the package structure 50, and electrically connecting the first electrode 30 to the circuit carrier 70, the conductive trace 80 electrically connecting the first electrode 30 to a corresponding pad or trace on the circuit carrier 70.
Specifically, the optical structure 40 and the package structure 50 are the same photoresist cured product. The height of the package structure 50 is smaller than the height of the light emitting unit 20.
Specifically, the epitaxial layer 20a includes an n-type layer 21, a light emitting layer 22, and a p-type layer 23. The light emitting unit 20 includes an epitaxial layer 20a, a transparent conductive layer 24 formed on top of the epitaxial layer 20a, and an insulating layer 25 formed on a sidewall of the epitaxial layer 20a, and an upper side of the insulating layer 25 further wraps a peripheral edge of the epitaxial layer 20a. Wherein the upper side of the insulating layer 25 also extends to the top of the epitaxial layer 20a and wraps the periphery of the transparent conductive layer 24. Of course, the transparent conductive layer 24 may not be provided. The transparent conductive layer 24 is an ITO layer. The insulating layer 25 may be one or more layers. The cross section of the light emitting unit 20 is gradually reduced from bottom to top, and the side of the light emitting unit 20 is inclined.
Wherein the area of the optical structure 40 is smaller than the area of the top of the light emitting unit 20, and the conductive line 80 further extends to the area of the first electrode 30 on the top of the light emitting unit 20 and not covered by the optical structure 40.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the scope of the claims, which follow, as defined in the claims.
Claims (10)
1. A manufacturing method of a Micro LED display module is characterized by comprising the following steps: comprising the following steps:
providing a substrate grown with a plurality of light emitting cells;
forming a first electrode on top of the light emitting unit, the first electrode also extending onto a sidewall of the light emitting unit;
forming a packaging structure between the light emitting units, wherein the packaging structure wraps at least part of the first electrode extending to the side wall area of the light emitting unit, and an optical structure is formed on the top of the light emitting unit and covers the part of the first electrode located in the top area of the light emitting unit;
bonding a temporary carrier plate to a side of the light emitting unit away from the substrate to temporarily bond the temporary carrier plate to the optical structure;
peeling the substrate and bonding a circuit carrier plate to one side of the light-emitting unit away from the temporary carrier plate;
and releasing the temporary bonding of the temporary carrier plate and the optical structure to remove the temporary carrier plate.
2. The method for manufacturing the Micro LED display module according to claim 1, wherein: providing a substrate grown with a plurality of light emitting cells comprises the steps of:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate and an epitaxial layer formed on the substrate;
dividing the epitaxial layer to form a plurality of independent light emitting structures;
and forming an insulating layer on the side wall of the light emitting structure, and enabling the upper side of the insulating layer to wrap the peripheral edge of the top of the light emitting structure, wherein the peripheral edge of the optical structure covers part of the upper side of the insulating layer.
3. The method for manufacturing the Micro LED display module according to claim 2, wherein: before forming the insulating layer on the side wall of the light emitting structure, the method further comprises the steps of: forming a transparent conductive layer on top of the light emitting structure; when an insulating layer is formed on the side wall of the light-emitting structure, the upper side of the insulating layer also extends to the top of the light-emitting unit and wraps the periphery of the transparent conductive layer, and the first electrode extends to an area which is not wrapped by the insulating layer at the top of the light-emitting unit and is in contact with the transparent conductive layer.
4. The method for manufacturing the Micro LED display module according to claim 1, wherein: the optical structure and the packaging structure are formed in one step by spin coating SU8 photoresist.
5. The method for manufacturing the Micro LED display module according to claim 1, wherein: the step of removing the temporary carrier plate further comprises the steps of: forming a conductive circuit on a region of the first electrode, which is positioned on the side wall of the light emitting unit and is not wrapped by the packaging structure, wherein the conductive circuit is electrically connected with the circuit carrier plate; and a second electrode is further formed on one side, close to the substrate, of the light-emitting unit, and when a circuit carrier plate is bonded to one side, far away from the temporary carrier plate, of the light-emitting unit, the first bonding pad of the circuit carrier plate is welded with the second electrode.
6. The method for manufacturing the Micro LED display module according to claim 5, wherein: the area of the optical structure is smaller than that of the top of the light-emitting unit, and the conductive circuit also extends to the area of the first electrode, which is positioned on the top of the light-emitting unit and is not covered by the optical structure.
7. The method for manufacturing the Micro LED display module according to claim 1, wherein: and a second electrode is further formed on one side of the light-emitting unit adjacent to the substrate, the first electrode extends onto the substrate along the side part of the light-emitting unit when the first electrode is formed, and extends outwards along the substrate to form an electrode pad, the first pad of the circuit carrier is welded with the second electrode when the circuit carrier is bonded to the light-emitting unit, and the second pad of the circuit carrier is welded with the electrode pad.
8. The method for manufacturing the Micro LED display module according to claim 1, wherein: the cross section of the light-emitting unit gradually becomes smaller from bottom to top, and the side edge of the light-emitting unit is inclined.
9. Micro LED display module, its characterized in that: made by the method for manufacturing a Micro LED display module according to any one of claims 1-8.
10. Micro LED display module, its characterized in that: the LED light-emitting device comprises a circuit carrier plate, a plurality of light-emitting units bonded on the circuit carrier plate, a first electrode formed at the top of each light-emitting unit, an optical structure and a packaging structure formed between the light-emitting units and contacting the circuit carrier plate, wherein the first electrode also extends to the side wall of the light-emitting unit, the optical structure covers the part of the first electrode located at the top area of the light-emitting unit, and the packaging structure wraps the part of the first electrode extending to the side wall area of the light-emitting unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311871567.1A CN117790489A (en) | 2023-12-29 | 2023-12-29 | Manufacturing method of Micro LED display module and Micro LED display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311871567.1A CN117790489A (en) | 2023-12-29 | 2023-12-29 | Manufacturing method of Micro LED display module and Micro LED display module |
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| Publication Number | Publication Date |
|---|---|
| CN117790489A true CN117790489A (en) | 2024-03-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311871567.1A Pending CN117790489A (en) | 2023-12-29 | 2023-12-29 | Manufacturing method of Micro LED display module and Micro LED display module |
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| Country | Link |
|---|---|
| CN (1) | CN117790489A (en) |
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- 2023-12-29 CN CN202311871567.1A patent/CN117790489A/en active Pending
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