CN117766667A - Micro light emitting diode and display device - Google Patents
Micro light emitting diode and display device Download PDFInfo
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- CN117766667A CN117766667A CN202311862886.6A CN202311862886A CN117766667A CN 117766667 A CN117766667 A CN 117766667A CN 202311862886 A CN202311862886 A CN 202311862886A CN 117766667 A CN117766667 A CN 117766667A
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a miniature light-emitting diode and a display device, wherein the miniature light-emitting diode comprises a semiconductor lamination, and the semiconductor lamination comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially laminated; the micro light-emitting diode is provided with a first surface and a second surface which are opposite, the first surface is provided with a micro lens structure protruding towards the light-emitting surface direction of the micro light-emitting diode, and the micro lens structure covers the side wall of the first semiconductor layer, the side wall of the light-emitting layer and part or all of the side wall of the second semiconductor layer of the micro light-emitting diode; the outer surface of the microlens structure is provided with coarse particles. According to the micro light-emitting diode provided by the invention, the micro lens structure is coated on the side wall of the semiconductor lamination of the micro light-emitting diode, and meanwhile, the rough particles are arranged on the surface of the micro lens structure, so that the probability of total reflection of light emitted by the active layer in the micro lens structure can be remarkably reduced, and the light extraction efficiency and the light-emitting angle of the light-emitting diode are greatly improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a micro light emitting diode and a display device.
Background
Micro light emitting diodes (Micro LEDs) have characteristics of small size, high integration, self luminescence, and the like. Compared with LCD and OLED display, micro LEDs have great advantages in the aspects of brightness, resolution, contrast, energy consumption, service life, response speed, thermal stability and the like, and have wide and important application values in commerce. Such as AR (Augmented Reality ), VR (Virtual Reality), wearable devices, head up Display systems (HUD), micro projection, 3D printing, etc., have been considered by the industry as final solutions for AR near-to-eye Display.
As the requirements for Micro LEDs are gradually reduced in the process of pursuing better compactness and portability at the application end, the chip size needs to be reduced to 5um, 2um or even below 2 um.
In the application of miniaturized products, the Micro LED products pay more attention to the axial brightness, the existing Micro LED products adopt a Micro Lens refraction mode to collect light of a light-emitting diode, the Micro Lens is usually made of a transparent medium layer, the Micro Lens is designed into a proper shape, the light of different angles is concentrated to the axial direction as far as possible, however, the refraction index of the conventional Micro Lens material is larger than that of air; when the incident angle is larger than the critical angle, total reflection is easy to occur, light can be reflected into the epitaxial material of the Micro LED, so that the luminous efficiency is reduced, and the light yield is not obviously improved.
It should be noted that the information disclosed in this background section is only for the purpose of increasing the understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art
Disclosure of Invention
To solve the above-mentioned problems, an embodiment of the present invention provides a micro light emitting diode, including:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the miniature light emitting diode is provided with a first surface and a second surface which are opposite, the first surface is far away from the second semiconductor layer and is positioned on the same side with the first semiconductor layer; the second surface is far away from the first semiconductor layer and is positioned on the same side as the second semiconductor layer;
the first surface is provided with a micro-lens structure protruding towards the light-emitting surface direction of the first surface, and the micro-lens structure coats the side wall of the first semiconductor layer, the side wall of the light-emitting layer and part or all of the side wall of the second semiconductor layer;
the outer surface of the microlens structure is provided with rough particles.
Further, in the foregoing embodiment, the microlens structure material is a photo-dense dielectric glue material, preferably a silicon dioxide or silicon nitride material.
On the basis of the embodiment, further, the roughness of the outer surface of the micro-lens structure is 100nm-1000nm.
Further, in the above embodiment, the cross-sectional shape of the microlens structure is at least one of a semicircle, an arc, a triangle, a cylinder, a trapezoid, and a honeycomb.
On the basis of the above embodiment, further, the coarse particles are disposed in an outer surface region B of the microlens structure, the outer surface region a of the microlens structure being not disposed with the coarse particles; the area A extends from the center of the outer surface of the micro-lens structure to the area B from the periphery;
the maximum width between the two opposite side walls of the semiconductor lamination is d1, the straight line distance between the peripheral edge lines of the area A is r, and r is more than or equal to 0 and less than or equal to d1.
On the basis of the embodiment, further, the width d2 between the two opposite side walls of the light-emitting layer is more than or equal to 0 and less than or equal to d2.
Further, on the basis of the above embodiment, a width d3 between two opposite sidewalls of the first semiconductor layer is 0.ltoreq.r.ltoreq.d3.
On the basis of the above embodiment, the semiconductor device further includes an insulating protection layer, wherein the insulating protection layer extends from the upper surface of the first semiconductor layer, the side wall of the first semiconductor layer, and the side wall of the light emitting layer to the side wall of the second semiconductor layer in sequence;
the insulating protection layer on the upper surface of the first semiconductor layer is provided with a through hole, and the through hole penetrates through the insulating protection layer to the first semiconductor layer;
further comprises:
the first common electrode covers the surface of the insulating protection layer and fills the through hole, and is electrically connected with the first conductor layer;
and the second common electrode is arranged on one side of the second semiconductor layer far away from the light-emitting layer and is electrically connected with the second semiconductor layer.
Further, in accordance with the above embodiment, a first ohmic contact layer is provided between the first common electrode and the first semiconductor layer, the first ohmic contact layer being formed of a transparent conductive material.
Further, a second ohmic contact layer is further disposed between the second common electrode and a side of the second semiconductor layer away from the light emitting layer.
Further, the light emitting device further comprises a reflective layer disposed on a side of the second ohmic contact layer away from the light emitting layer.
Further, on the basis of the above embodiment, the reflective layer is formed of at least one metal or alloy including Ag, ni, al, rh, pd, I r, ru, mg, zn, pt, au and Hf.
The invention also provides a light-emitting device, which comprises a driving substrate and pixel units, wherein the pixel units are micro light-emitting diodes, and a plurality of the micro light-emitting diodes are distributed on the mounting substrate in an array manner; wherein, miniature luminescent diode includes:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the miniature light emitting diode is provided with a first surface and a second surface which are opposite, the first surface is far away from the second semiconductor layer and is positioned on the same side with the first semiconductor layer; the second surface is far away from the first semiconductor layer and is positioned on the same side as the second semiconductor layer;
the first surface is provided with a micro-lens structure protruding towards the light-emitting surface direction of the first surface, and the micro-lens structure coats the side wall of the first semiconductor layer, the side wall of the light-emitting layer and part or all of the side wall of the second semiconductor layer of the micro-light-emitting diode;
the outer surface of the microlens structure is provided with rough particles.
On the basis of the above embodiment, the semiconductor device further includes an insulating protection layer, wherein the insulating protection layer extends from the upper surface of the first semiconductor layer, the side wall of the first semiconductor layer, and the side wall of the light emitting layer to the side wall of the second semiconductor layer in sequence;
the insulating protection layer on the upper surface of the first semiconductor layer is provided with a through hole, and the through hole penetrates through the insulating protection layer to the first semiconductor layer;
also included is a method of manufacturing a semiconductor device,
the first common electrode covers the surface of the insulating protection layer and fills the through hole, and is electrically connected with the first conductor layer;
the first common electrodes of the micro light emitting diodes are connected into a whole;
the second common electrode is arranged on one side of the second semiconductor layer far away from the light-emitting layer and is electrically connected with the second semiconductor layer;
the second common electrodes of the micro light emitting diodes are connected as a whole.
On the basis of the above embodiment, further, the plurality of micro light emitting diodes are electrically connected to the mounting substrate through a bonding conductive layer disposed on the second common electrode.
Based on the above embodiment, further, the shortest distance between the bottom of the semiconductor stack of the micro light emitting diode and the outer surface of the micro lens structure is L1, and the distance between the semiconductor stacks of different micro light emitting diodes is D2, so that 0 < L1 is less than or equal to D/2.
According to the micro light-emitting diode provided by the invention, the micro lens structure is coated on the side wall of the semiconductor lamination of the micro light-emitting diode, so that the micro lens structure not only can well protect the side wall structure of the light-emitting diode, but also can collect the light emitted by the active layer from the side wall, thereby improving the light-emitting brightness of the light-emitting diode; meanwhile, rough particles are arranged on the surface of the micro-lens structure, so that the probability of total reflection of light emitted by the active layer in the micro-lens structure can be remarkably reduced, and the light extraction efficiency of the light-emitting diode is greatly improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the prior art descriptions, and it is obvious that some of the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a micro led according to embodiment 1 of the present invention;
FIG. 2 is a schematic diagram of a total reflection light path generated by a lens structure of a prior art micro light emitting diode;
fig. 3 is a schematic diagram of a preferred embodiment of a lens structure of a micro led according to embodiment 1 of the present invention;
fig. 4 is a schematic diagram of a second preferred embodiment of a lens structure of a micro led according to embodiment 1 of the present invention;
fig. 5 is a schematic diagram of a preferred third embodiment of a lens structure of a micro led according to embodiment 1 of the present invention;
fig. 6 is a schematic diagram of a preferred fourth embodiment of a lens structure of a micro led according to embodiment 1 of the present invention;
fig. 7 is a schematic diagram of a reference process of a manufacturing process of a micro light emitting diode according to embodiment 1 of the present invention;
fig. 8 is a schematic structural diagram of a micro led according to embodiment 2 of the present invention;
FIG. 9 is a schematic diagram of a preferred structure of a micro light emitting diode according to embodiment 3 of the present invention;
fig. 10 is a schematic diagram of a preferred structure of a micro led according to embodiment 3 of the present invention;
FIG. 11 is a schematic diagram showing a preferred structure of a micro light emitting diode according to embodiment 3 of the present invention;
fig. 12 is a schematic structural diagram of a display device according to embodiment 3 of the present invention.
The embodiment of the invention provides a structure schematic diagram of a micro light emitting diode.
Reference numerals:
100-a first semiconductor layer; 200-a light emitting layer; 300-a second semiconductor layer; 400-microlens structure; 410-coarse particles; 500-an insulating protective layer; 600-a first common electrode; 700-a second common electrode; 110-a first ohmic contact layer; 310-a second ohmic contact layer; 320-a reflective layer; 800-bonding a conductive layer; 900-mounting substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific orientation or be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more. In addition, the term "comprising" and any variations thereof are meant to be "at least inclusive".
Example 1
An embodiment of the present invention provides a micro light emitting diode, shown in fig. 1, including:
a semiconductor stack including a first semiconductor layer 100, a light emitting layer 200, and a second semiconductor layer 300 stacked in this order;
in some embodiments, the first semiconductor layer 100 may be an N-type semiconductor layer, and electrons may be supplied to the light emitting layer 200 under the power supply. Preferably, the first semiconductor layer 100 includes an N-type doped nitride layer, an arsenide layer, or a phosphide layer. The N-doped nitride layer, the arsenide layer, or the phosphide layer may include N-type impurities, which may include one or a combination of Si, ge, sn. The first semiconductor layer 100 may have a single-layer structure or a multi-layer structure having different compositions.
The second semiconductor layer 300 may be a P-type semiconductor layer, and may provide holes to the light emitting layer 200 under the power supply. In some embodiments, the second semiconductor layer 300 includes a P-type doped nitride layer, an arsenide layer, or a phosphide layer. The P-doped nitride, arsenide, or phosphide layers may include one or more P-type impurities, which may include one or a combination of Mg, zn, be. The second semiconductor layer 300 may have a single-layer structure or a multi-layer structure having different compositions.
In addition, in other embodiments, the first semiconductor layer 100 may be a P-type semiconductor layer, and the second semiconductor layer 300 may be an N-type semiconductor layer.
The light emitting layer 200 may be a Quantum Well (QW) structure. In some embodiments, the light emitting layer 200 may also be a multiple quantum Well structure (Multiple Quantum Well, abbreviated as MQW), wherein the multiple quantum Well structure includes a plurality of quantum Well layers (Well) and a plurality of quantum Barrier layers (Barrier) alternately arranged in a repetitive manner, and may be, for example, a multiple quantum Well structure of GaN/AlGaN, inAlGaN/InAlGaN, inGaN/AlGaN or InAlGaP/InAlGaP. The composition and thickness of the well layer in the light-emitting layer 200 determine the wavelength of the generated light. To increase the light emitting efficiency of the light emitting layer 200, this may be achieved by varying the depth of the quantum wells, the number of layers, thickness, and/or other characteristics of the pairs of quantum wells and quantum barriers in the light emitting layer 200.
The micro light emitting diode has a first surface S1 and a second surface S2 opposite to each other, as shown in fig. 1, the first surface S1 is far away from the second semiconductor layer 300 and is located on the same side as the first semiconductor layer 100; the second surface S2 is far away from the first semiconductor layer 100 and is located on the same side as the second semiconductor layer 300;
the first surface S1 is provided with a microlens structure 400 protruding toward the light-emitting surface, and the microlens structure 400 covers the sidewall of the first semiconductor layer 100, the sidewall of the light-emitting layer 200, and a part or all of the sidewalls of the second semiconductor layer 300; the micro lens structure 400 plays a role in condensing light, and in this embodiment, the micro lens structure 400 covers the whole semiconductor stack and the side wall and the top surface thereof, so that light emitted from the side wall of the micro light emitting diode can be refracted and condensed by the micro lens structure 400, and the light emitting efficiency of the micro light emitting diode is further improved.
On the basis of the above structure, as shown in fig. 1, the outer surface of the microlens structure 400 is provided with rough particles 410. In this embodiment, the rough particles 410 cover the entire outer surface of the microlens structure 400. As shown in fig. 2, the lens structure is disposed on the first semiconductor layer in the light emitting diode of the prior art, however, the lens structure of the prior art may cause the phenomenon that the emitted light is totally reflected, so that the light emitted by the micro light emitting diode may be reflected into the epitaxial material of the micro light emitting diode, and the light emitting efficiency may be low. In the embodiment of the present invention, the microlens structure 400 covers the entire semiconductor stack and the sidewalls thereof, and this way, although being capable of converging the light emitted from the sidewalls of the light emitting diode, is easier to solve the problem of total reflection of the light, especially the light emitted from the sidewalls of the micro light emitting diode. On this basis, in the technical scheme of the embodiment of the invention, the rough particles 410 are arranged on the outer surface of the micro lens structure 400, the rough particles 410 are easy to destroy the total reflection angle, and the total reflection probability of light emitted by the micro light emitting diode is reduced, so that more light emitting probability is achieved, and the light emitting efficiency of the micro light emitting diode is improved.
In this embodiment, the microlens structure material is an optical dense dielectric adhesive material, preferably a silicon dioxide or silicon nitride material; the roughness of the outer surface of the microlens structure 400 is 100nm to 1000nm, and the limitation of the roughness can further reduce the probability of total reflection.
Optionally, the cross-sectional shape of the microlens structure 400 is at least one of a semicircle (as shown in fig. 3), an arc (as shown in fig. 1), a triangle (as shown in fig. 4), a cylinder (as shown in fig. 5), a trapezoid (as shown in fig. 6), and a honeycomb (not shown in the figure); the person skilled in the art can make corresponding selections according to the actual needs. The corresponding shape can be prepared by adopting a yellow light lithography process, a photoresist hard baking process, a nano Mi Xiao ball, an electron beam lithography process and the like.
As shown in figure 1As an example, this embodiment provides a manufacturing process, as shown in fig. 7, in which a lens layer is deposited on a semiconductor stack (fig. 7 a), a pattern is defined by using photolithography after the lens layer is deposited by using a photoresist PR (fig. 7 b), and a rough and regular three-dimensional microlens is defined by using a dry etching method (fig. 7 c), wherein the rough and three-dimensional structure features that each microlens has an irregularly roughened surface (fig. 7 d). In the preparation process, a section of dry etching is adopted to adjust the power ratio of the upper electrode and the lower electrode of ICP and gas O 2 :CF 4 Proportion, gas O 2 :SF 6 Ratio and gas O 2 Ar ratio can be realized, and a person skilled in the art can select specific parameters according to the technical conception of the invention.
In this embodiment, further, an insulating protection layer 500 is further included, and the insulating protection layer 500 sequentially extends from the upper surface of the first semiconductor layer 100, the sidewall of the light emitting layer 200 to the sidewall of the second semiconductor layer;
wherein the material of the insulating protection layer 500 comprises a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may comprise silica gel. The dielectric material comprises an electrically insulating material such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating protective layer 500 material may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof.
The insulating protection layer 500 located on the upper surface of the first semiconductor layer 100 is provided with a through hole penetrating the insulating protection layer 500 to the first semiconductor layer 100;
in the embodiment of the present invention, since the microlens structure 400 needs to cover the entire semiconductor stack and the sidewalls and top surface thereof, in order not to damage the structure of the microlens structure 400, the present embodiment further provides an electrode design manner, and in particular, as shown in fig. 1, the micro light emitting diode further includes:
a first common electrode 600, wherein the first common electrode 600 covers the surface of the insulating protection layer 500 and fills the through hole, and is electrically connected with the first conductor layer 100; by this arrangement of the first common electrode 600, the electrode can be led out of the microlens structure 400 without damaging the structure of the microlens structure 400. Preferably, the first common electrode 600 is made of a transparent conductive material, such as ITO or other materials, which can also serve as an anti-reflection film to increase the light extraction efficiency of the micro light emitting diode.
And a second common electrode 700, wherein the second common electrode 700 is disposed on a side of the second semiconductor layer 300 away from the light emitting layer 200, and is electrically connected to the second semiconductor layer 300.
In addition, those skilled in the art can add other structural features of the led based on the embodiment, which will not be described herein.
Example 2
In accordance with embodiment 2, as shown in fig. 8, a first ohmic contact layer 110 is provided between the first common electrode 600 and the first semiconductor layer 100, and the first ohmic contact layer 110 is formed of a transparent conductive material. A second ohmic contact layer 310 is further provided between a side of the second semiconductor layer 300 remote from the light emitting layer 200 and the second common electrode 700. The materials of the first ohmic contact layer 110 and the second ohmic contact layer 310 may be selected according to the actual situation by those skilled in the art of the present invention.
Preferably, as shown in fig. 8, the light emitting device further includes a reflective layer 320, and the reflective layer 320 is disposed at a side of the second ohmic contact layer 310 remote from the light emitting layer 200. The reflective layer 320 is formed of a metal or alloy including at least one of Ag, N i, A l, rh, pd, I r, ru, mg, zn, pt, au, and Hf. The arrangement of the emission layer 320 can make the light emitted by the light-emitting layer 200 reflect to the light-emitting surface of the micro light-emitting diode, so as to further improve the light-emitting efficiency of the light-emitting diode.
In addition, those skilled in the art can add other structural features of the led based on the embodiment, which will not be described herein.
Example 3
This embodiment differs from embodiment 1 in that the coarse particles 410 cover only a part of the outer surface of the microlens structure 400. That is, as shown in fig. 9, the coarse particles are disposed in the outer surface region B of the microlens structure, and the outer surface region a of the microlens structure is not disposed with the coarse particles; the area A extends from the center of the outer surface of the micro-lens structure to the area B from the periphery; the maximum width between the opposite side walls of the semiconductor stack is d1 (which can also be considered as the maximum distance between the boundary lines of the region a and the region B in the outer surface of the microlens structure), the straight line distance between the peripheral edge lines of the region a is r, in the case of r=0 in embodiment 1, and in this embodiment, 0 < r.ltoreq.d1. Fig. 9 shows a case where r=d1. Wherein, the maximum width d1 between the opposite side walls of the semiconductor stack is also the maximum width d1 between the opposite side walls of the second semiconductor layer.
Because the light emitting surface of the conventional LED core particle is limited, the light emitting angle is smaller, and therefore, the rough particles are only arranged in the limited area of embodiment 3, namely, the area outside the outer surface A1 of the microlens structure 400, so that the problem of total reflection of most of the light emitting diode is solved, and meanwhile, the light emitted by the active layer can be emitted through the rough surface, and the light emitting angle is increased. On the other hand, the smooth surface is maintained in the central region of the microlens structure 400, so that diffuse reflection at the center of the light emitting diode can be reduced, and the center light collecting effect of the micro light emitting diode can be further improved.
Similarly, as shown in fig. 10, the width d2 between the opposite sidewalls of the light emitting layer may be defined as 0 < r.ltoreq.d2 according to practical situations, and fig. 10 shows a case where r=d2.
As shown in fig. 11, the width d3 between the opposite sidewalls of the first semiconductor layer may be defined as 0 < r.ltoreq.d3 according to practical situations, and fig. 11 shows a case where r=d3.
Example 4
The present embodiment provides a light emitting device, as shown in fig. 12, including a driving substrate and a pixel unit, where the pixel unit is a micro light emitting diode, and a plurality of micro light emitting diodes are distributed in an array on a mounting substrate 900; wherein, the micro light emitting diode can adopt any preferable combination of the technical schemes as in the embodiments 1, 2 and 3; wherein, referring to fig. 12, the first common electrodes 600 of the plurality of micro light emitting diodes are connected as one body; the second common electrodes 700 of the plurality of micro light emitting diodes are connected as one body; the micro light emitting diodes are electrically connected to the mounting substrate 900 through the bonding conductive layer 800 disposed on the second common electrode 700. In this way, a plurality of micro light emitting diodes can be provided on the same mounting substrate 900.
Furthermore, in order to ensure that the micro lens structures 400 between the micro light emitting diodes are not affected by each other, the shortest distance between the bottom of the semiconductor lamination and the outer surface of the micro lens structure is L1, and the distance between the semiconductor lamination of different micro light emitting diodes is D2, so that 0 < L1 is less than or equal to D/2.
In addition, those skilled in the art can add other structural features of the led based on the embodiment, which will not be described herein.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (17)
1. A micro light emitting diode, comprising:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the miniature light emitting diode is provided with a first surface and a second surface which are opposite, the first surface is far away from the second semiconductor layer and is positioned on the same side with the first semiconductor layer; the second surface is far away from the first semiconductor layer and is positioned on the same side as the second semiconductor layer;
the first surface is provided with a micro-lens structure protruding towards the light-emitting surface direction of the first surface, and the micro-lens structure coats the side wall of the first semiconductor layer, the side wall of the light-emitting layer and part or all of the side wall of the second semiconductor layer;
the outer surface of the microlens structure is provided with rough particles.
2. The micro light emitting diode of claim 1, wherein: the micro-lens structure material is an optical density medium adhesive material.
3. The micro light emitting diode of claim 1, wherein: the microlens structure material is silicon dioxide or silicon nitride material.
4. The micro light emitting diode of claim 1, wherein: the roughness of the outer surface of the micro-lens structure is 100nm-1000nm.
5. The micro light emitting diode of claim 1, wherein: the sectional shape of the micro-lens structure is at least one of semicircle, arc, triangle, cylinder, trapezoid and honeycomb.
6. The micro light emitting diode of claim 1, wherein: the rough particles are arranged in an outer surface area B of the micro-lens structure, and the rough particles are not arranged in an outer surface area A of the micro-lens structure; the area A extends from the center of the outer surface of the micro-lens structure to the area B from the periphery;
the maximum width between the two opposite side walls of the semiconductor lamination is d1, the straight line distance between the peripheral edge lines of the area A is r, and r is more than or equal to 0 and less than or equal to d1.
7. The micro light emitting diode as set forth in claim 6, wherein: the width d2 between the two opposite side walls of the light-emitting layer is more than or equal to 0 and less than or equal to d2.
8. The micro light emitting diode as set forth in claim 6, wherein: and the width d3 between the two opposite side walls of the first semiconductor layer is more than or equal to 0 and less than or equal to d3.
9. The micro light emitting diode as set forth in claim 6, wherein: the light-emitting device further comprises an insulating protection layer, wherein the insulating protection layer sequentially extends from the upper surface of the first semiconductor layer, the side wall of the first semiconductor layer and the side wall of the light-emitting layer to the side wall of the second semiconductor layer;
the insulating protection layer on the upper surface of the first semiconductor layer is provided with a through hole, and the through hole penetrates through the insulating protection layer to the first semiconductor layer;
further comprises:
the first common electrode covers the surface of the insulating protection layer and fills the through hole, and is electrically connected with the first conductor layer;
and the second common electrode is arranged on one side of the second semiconductor layer far away from the light-emitting layer and is electrically connected with the second semiconductor layer.
10. The micro light emitting diode as set forth in claim 9, wherein: a first ohmic contact layer is disposed between the first common electrode and the first semiconductor layer, the first ohmic contact layer being formed of a transparent conductive material.
11. The micro light emitting diode as set forth in claim 9, wherein: and a second ohmic contact layer is also arranged between one side of the second semiconductor layer far away from the light-emitting layer and the second common electrode.
12. The micro light emitting diode as set forth in claim 11, wherein: the light emitting device further comprises a reflecting layer, wherein the reflecting layer is arranged on one side, far away from the light emitting layer, of the second ohmic contact layer.
13. The micro light emitting diode as set forth in claim 12, wherein: the reflective layer is formed of at least one metal or alloy including Ag, ni, al, rh, pd, ir, ru, mg, zn, pt, au and Hf.
14. A light emitting device, characterized in that: the LED display device comprises a driving substrate and pixel units, wherein the pixel units are micro light emitting diodes, and a plurality of the micro light emitting diodes are distributed on the mounting substrate in an array manner; wherein, miniature luminescent diode includes:
a semiconductor stack including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in this order;
the miniature light emitting diode is provided with a first surface and a second surface which are opposite, the first surface is far away from the second semiconductor layer and is positioned on the same side with the first semiconductor layer; the second surface is far away from the first semiconductor layer and is positioned on the same side as the second semiconductor layer;
the first surface is provided with a micro-lens structure protruding towards the light-emitting surface direction of the first surface, and the micro-lens structure coats the side wall of the first semiconductor layer, the side wall of the light-emitting layer and part or all of the side wall of the second semiconductor layer of the micro-light-emitting diode;
the outer surface of the microlens structure is provided with rough particles.
15. A light emitting device according to claim 13, wherein: the light-emitting device further comprises an insulating protection layer, wherein the insulating protection layer sequentially extends from the upper surface of the first semiconductor layer, the side wall of the first semiconductor layer and the side wall of the light-emitting layer to the side wall of the second semiconductor layer;
the insulating protection layer on the upper surface of the first semiconductor layer is provided with a through hole, and the through hole penetrates through the insulating protection layer to the first semiconductor layer;
further comprises:
the first common electrode covers the surface of the insulating protection layer and fills the through hole, and is electrically connected with the first conductor layer;
the first common electrodes of the micro light emitting diodes are connected into a whole;
the second common electrode is arranged on one side of the second semiconductor layer far away from the light-emitting layer and is electrically connected with the second semiconductor layer;
the second common electrodes of the micro light emitting diodes are connected as a whole.
16. A light emitting device according to claim 15, wherein: the micro light emitting diodes are electrically connected with the mounting substrate through bonding conducting layers arranged on the second common electrode.
17. A light emitting device according to claim 16, wherein:
the shortest distance between the bottom of the semiconductor lamination of the miniature light-emitting diode and the outer surface of the micro lens structure is L1, and the distance between the semiconductor lamination of different miniature light-emitting diodes is D2, so that the L1 is more than 0 and less than or equal to D/2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311862886.6A CN117766667A (en) | 2023-12-29 | 2023-12-29 | Micro light emitting diode and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311862886.6A CN117766667A (en) | 2023-12-29 | 2023-12-29 | Micro light emitting diode and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117766667A true CN117766667A (en) | 2024-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311862886.6A Pending CN117766667A (en) | 2023-12-29 | 2023-12-29 | Micro light emitting diode and display device |
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| Country | Link |
|---|---|
| CN (1) | CN117766667A (en) |
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2023
- 2023-12-29 CN CN202311862886.6A patent/CN117766667A/en active Pending
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